High stability voltage stabilizing integrated circuit
By designing a high-stability voltage regulator integrated circuit, using all-identical active devices and multi-functional protection circuits, the problems of large size and complex structure of linear voltage regulator circuits were solved, achieving reduced power consumption and stability to adapt to complex environments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- CHINA ZHENHUA GRP YONGGUANG ELECTRONICS CO LTD STATE OWNED NO 873 FACTORY
- Filing Date
- 2023-08-22
- Publication Date
- 2026-07-31
AI Technical Summary
Existing linear voltage regulator circuits are large in size, complex in structure, have a wide variety of components, consume a lot of power, and have limited applications.
Design a high-stability voltage regulator integrated circuit, which adopts a constant current source bias circuit, a current amplification reference circuit, a compensation circuit and an output circuit as the main components, combined with protection circuit modules such as over-temperature protection, exceeding the safe operating area protection and electrostatic discharge protection. Use all the same active devices such as transistors, field-effect transistors or MOSFETs to reduce the variety of components and the complexity of the process structure.
It achieves a reduction in chip area and power consumption, improves yield and reliability, and is suitable for complex environments such as high-altitude or aerospace environments, with a power consumption reduction of 50%-60%.
Smart Images
Figure CN116860063B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of semiconductor integrated circuits, and more specifically to the field of semiconductor linear integrated circuits. In particular, it relates to a high-stability voltage regulator integrated circuit. Background Technology
[0002] Existing traditional linear voltage regulator circuits use NPN Darlington transistors as the regulating transistor, with an operating dropout voltage range of 1.5-2.5V. This relatively large dropout voltage results in high power consumption in applications, requiring a large heatsink to ensure normal operation and thus limiting its application. The large heatsink also presents many inconveniences for this type of regulator. Therefore, we have made improvements and invented a quasi-low dropout linear voltage regulator. The design uses a PNP transistor to drive the NPN regulating transistor, reducing the dropout voltage to 1.0-1.2V, significantly reducing power consumption by 50%-60% compared to traditional regulators. Furthermore, this circuit has undergone full-process simulation verification, demonstrating strong process consistency. It is an integrated voltage regulator circuit with complete and multi-functional protection circuitry and supporting circuitry.
[0003] In view of this, the present invention is hereby proposed. Summary of the Invention
[0004] The technical problem to be solved by the present invention is to address the issues of large size, complex structure, and numerous types and numbers of components in existing linear voltage regulator circuits.
[0005] The inventive concept of this invention is to design a high-stability voltage regulator integrated circuit, with a constant current source bias circuit, a current amplification reference circuit, a compensation circuit, and an output circuit as the main components. Protection circuit modules are designed for over-temperature, exceeding the safe operating area (overcurrent, overvoltage), and electrostatic discharge protection. Each circuit module can operate independently or be partially modified to adapt to other circuits to achieve the overall circuit function. All active devices used in the circuit are of the same type, such as transistors, field-effect transistors, MOSFETs, or IGBTs. All resistors used in the circuit can be epitaxial layer resistors, base region resistors, collector resistors, emitter resistors, etc., ensuring high component consistency. This significantly reduces the variety of components and the complexity of the process structure, reducing chip area and power consumption. The process achieves high yield at each stage, low cost, and high reliability.
[0006] Therefore, the present invention provides a high-stability voltage regulator integrated circuit, such as... Figure 1 As shown, it includes: a startup bias circuit module, an amplification compensation output circuit module, a temperature protection circuit module, a safe operating area protection circuit module, and an electrostatic discharge protection module.
[0007] The startup bias circuit module includes a startup circuit and a bias circuit. After receiving an external voltage, the startup circuit provides a signal to the bias circuit, causing the bias circuit to start working. The bias circuit module provides operating current to other circuit modules by mirroring and replicating the same or a certain proportion of current through multiple mirror current sources. The amplification and compensation output circuit module includes an amplification circuit, a reference circuit, a compensation circuit, and an output circuit. The amplification and compensation output circuit module receives the bias current from the bias circuit, thereby starting current amplification and voltage regulation output. The compensation circuit is used to monitor the amplified current. If the monitored current is too large or too small, its direction can be adjusted through the compensation circuit. The reference circuit generates a reference power supply, and the reference voltage is regulated and controlled by the voltage divider sampling network at the reference voltage output terminal. The output circuit amplifies the power of the reference voltage. The temperature protection circuit module turns on after receiving the bias current configured by the bias circuit. It monitors the temperature of the entire circuit in real time by monitoring the current. The transistors in the module have a set negative temperature coefficient. Once the temperature reaches the set level, the transistors turn on, which means that all the current is introduced to the ground terminal to protect the entire circuit from the effects of overheating. The safe operating area protection circuit module includes a current protection circuit module and a voltage protection circuit module, which are used to detect the current and voltage of the circuit in real time. Once the current exceeds the set value or the voltage is too high, the current will flow out from the protection circuit to the ground terminal, so that the large current does not pass through the compensation circuit and the output circuit. The electrostatic discharge (ESD) protection module is connected to the input, output, reference voltage, and ground terminals of the voltage regulator integrated circuit to provide ESD protection for each port. When the circuit is not working, the voltage regulator integrated circuit may encounter instantaneous high voltages of up to several thousand volts of static electricity. At this time, the ESD protection module starts to work and absorbs the static electricity. The positive terminal of the start-up bias circuit module is connected to the input voltage VIN terminal, and the negative terminal is connected to the reference power supply VOUT2 terminal; the negative terminals of the temperature protection circuit module and the current protection circuit module are connected to the reference power supply VOUT2 terminal; the negative terminal of the voltage protection circuit module is connected to ground, and the power supply terminal is connected to the input voltage VIN terminal; the bias current output terminal is connected to the corresponding bias current input terminals of the amplification compensation output circuit module, the temperature protection circuit module, the current protection circuit module, and the voltage protection circuit module, respectively; the output terminals of the temperature protection circuit module and the current protection circuit module are connected to the corresponding ports of the amplification compensation output circuit module, and the reference voltage output terminal of the amplification compensation output circuit module is grounded through a voltage divider sampling network.
[0008] The operation of this integrated circuit structure is as follows: a signal is given at the power supply terminal to activate the power-on circuit module, which in turn provides a signal to the bias circuit module. The bias circuit then provides current to the amplifier circuit module, compensation circuit module, output module, temperature protection circuit module, voltage protection circuit module, and current protection circuit module. The amplifier module is a current amplification module that amplifies the input current. The compensation circuit module controls the amplified current, and finally, the output module stabilizes the current. The stability of the reference voltage is controlled through a voltage divider sampling network. Furthermore, the voltage protection circuit module, current protection circuit module, temperature protection circuit module, and electrostatic discharge protection module continuously monitor the operation of the aforementioned power-on circuit module, bias circuit module, amplifier circuit module, compensation circuit module, and output circuit module.
[0009] Each circuit module of this invention can operate independently, and the various protection circuit modules can be partially modified to adapt to other circuits. The circuit modules coordinate and unify with each other to achieve the circuit function, ultimately combining to form a structure that can withstand various complex electronic environments and operate stably, realizing a highly stable voltage regulator integrated circuit structure.
[0010] All active devices in this invention are of the same type, namely transistors, field-effect transistors, or MOS, exhibiting strong consistency and high yield in the process stage.
[0011] The voltage regulator circuit described in this invention has a simple structure and multiple protection circuits to ensure circuit stability, making it suitable for use in complex environments, such as high-altitude or aerospace environments. Attached Figure Description
[0012] Figure 1 This is a schematic diagram of the circuit principle module structure.
[0013] Figure 2 This is a schematic diagram of the overall circuit principle structure.
[0014] Figure 3 This is a schematic diagram of the bias circuit module structure.
[0015] Figure 4 This is a schematic diagram of the amplification compensation output circuit module.
[0016] Figure 5 This is a schematic diagram of the temperature protection (over-temperature protection) circuit module.
[0017] Figure 6 This is a schematic diagram of the current protection (overcurrent protection) circuit module.
[0018] Figure 7 This is a schematic diagram of the voltage protection (overvoltage protection) circuit module.
[0019] Figure 8This is a schematic diagram of the electrostatic discharge protection module.
[0020] Figure 9 This is a diagram illustrating the voltage stabilization effect. Figure 1 .
[0021] Figure 10 This is a diagram illustrating the voltage stabilization effect. Figure 2 . Detailed Implementation
[0022] like Figure 1-8 As shown, a specific implementation of the high-stability voltage regulator integrated circuit is as follows: 1. Start the bias circuit module like Figure 3 As shown, the startup bias circuit module includes resistors R1, R2, R3, R4, R5, R6, R8, R9, and R10, Zener diode Z1, PNP transistors Q1, Q2, Q3, Q4, and Q5, and NPN transistors Q10 and Q11.
[0023] One end of R1, R2, R3, R4, R5, and R6 is connected to the input voltage VIN terminal. The other end of R1 is connected to one end of R8 and the cathode of Z1. The other end of R2 is connected to the emitter of Q1. The other end of R3 is connected to the emitter of Q2. The other end of R4 is connected to the emitter of Q3. The other end of R5 is connected to the emitter of Q4. The other end of R6 is connected to the emitter of Q5. The collector of Q1 is connected to the collector of Q10 and the bases of Q1, Q2, Q3, Q4, and Q5. The base of Q10 is connected to the base of Q11, the other end of R8, the collector of Q2, and one end of R10. The emitter of Q10 is connected to one end of R9. The anode of Z1 is connected to the other end of R9, the emitter of Q11, and the VOUT2 terminal. The collectors of Q3, Q4, and Q5 output bias currents I3, I4, and I5, respectively.
[0024] The transistor starts from Q11 and forms a current mirror with Q10, Q1, Q2, Q3, Q4, and Q5.
[0025] R2, R3, R4, R5, and R6 provide the static operating points for transistors Q1, Q2, Q3, Q4, and Q5, respectively.
[0026] 2. Amplification and Compensation Output Circuit Module like Figure 4 As shown, the amplification compensation output circuit module includes NPN transistors Q9, Q12, Q13, Q17, Q18, Q26, and Q27; PNP transistors Q6, Q7, Q8, Q14, Q15, and Q16; resistors R7, R11, R12, R13, R14, R22, R23, R24, R28, and R29; capacitors C1 and C2; and diode D1.
[0027] The collector of Q13 is connected to the emitters of Q6 and Q7, one end of R7, the emitter of Q8, the collector of Q9, and the input power supply VIN terminal. The collector of Q12 is connected to the corresponding bias current terminal, the emitters of Q15 and Q16, the collector of Q6, the base of Q26, and one end of R22. The base of Q12 is connected to the emitter of Q13 and one end of R11. The emitter of Q14 is connected to the corresponding bias current terminal and the base of Q13. The base of Q14 is connected to one end of C1, one end of C2, and the collectors of Q15 and Q17. The other end of C2 is connected to one end of R13, one end of R28, and one end of R29. The other end of R29 is grounded. The emitter of Q17 is connected to the other end of R13 and one end of R12. The other end of R12 is connected to the emitter of Q18. The collector of Q18 is connected to the collector of Q16, the base of Q15 and Q16. The collector of Q26 is connected to the collector of Q7, the base of Q6 and Q7. The emitter of Q26 is connected to one end of R23. The other end of R23 is connected to the emitter of Q27, the cathode of D1, and one end of R24. The collector of Q27 is connected to the other end of R7 and the base of Q8. The collector of Q8 is connected to the base of Q9 and the anode of D1. The emitter of Q9 is connected to the VOUT terminal through R27. The emitter of Q12 is connected to the other end of R11, the collector of Q14, the other end of C1, the other end of R28, the base of Q17 and Q18, the other end of R24, and the VOUT2 terminal.
[0028] The transistors Q12, Q13, and Q14 form a three-stage emitter follower amplifier circuit.
[0029] The transistors Q15, Q16, Q17, and Q18, together with resistors R12 and R13, form a bandgap reference voltage circuit.
[0030] The capacitors C1 and C2 are system stability compensation capacitors, and the resistor R28 is the output voltage sampling resistor.
[0031] Q6 and Q7 form a proportional current mirror, and the collector current of Q6 is 1 to 500 times that of the collector current of Q7.
[0032] 3. Temperature protection circuit module like Figure 5 As shown, the temperature protection circuit module includes NPN transistors Q20 and Q22, PNP transistors Q19 and Q21, and resistors R14, R15, R16, and R17.
[0033] The emitters of Q19 and Q21 are connected to the corresponding bias current terminals and one end of R14. The base of Q19 is connected to the base of Q20. The collector of Q20 is connected to the base of Q21 and the other end of R14. The emitter of Q20 is connected to one end of R15. The collector of Q21 is connected to the base of Q22 and one end of R16. The collector of Q22 is connected to the corresponding bias current terminal. The emitter of Q22 is connected to one end of R17. The collector of Q19 is connected to the other end of R15, the other end of R16, one end of R17, and the vout2 terminal.
[0034] Q22 is a negative temperature coefficient transistor used to detect the overall circuit temperature.
[0035] The output of the temperature protection circuit module is the compensation circuit and output circuit in the amplification compensation output module.
[0036] 4. Current protection circuit module like Figure 6 As shown, the current protection circuit module includes NPN transistors Q23, Q24, and Q25, resistors R18, R19, R20, and R21, and compensation capacitor C3.
[0037] The collector of Q23 is connected to the corresponding bias current terminal, one end of R18, and one end of R20. The emitter of Q23 is connected to the emitter of Q24 and the VOUT2 terminal. The base of Q23 is connected to the collector of Q24, the other end of R18, and one end of C3. The base of Q24 is connected to the other end of C3 and one end of R19. The collector of Q25 is connected to the other end of R19 and one end of R21. The base of Q25 is connected to the other end of R21 and the other end of R20. The emitter of Q25 is connected to the VOUT terminal.
[0038] The current protection circuit module monitors the I3 current branch.
[0039] The current protection circuit module has three branches that shunt current simultaneously: I3—transistor Q23—Vout2; I3—resistor R17—transistor Q24—Vout2; I3—resistor R20—resistor R19—transistor Q25—Vout.
[0040] The output terminal of the current protection circuit module is the compensation circuit and output circuit in the amplification compensation output module.
[0041] 5. Voltage protection circuit module like Figure 7 As shown, the voltage protection circuit module includes Zener diodes Z2, Z3, Z4, Z5, Z6, and Z7, resistors R25 and R26, and an NPN transistor Q28, whose positive terminal is connected to the VIN terminal and whose lower terminal is grounded.
[0042] The cathode of Z2 is connected to the VIN terminal. The anode of Z2 is connected in series with Z3 and Z4 in the same direction, and then connected to the cathode of Z5 through R25. The anode of Z5 is connected in series with Z6 and Z7 in the same direction, and then connected to one end of R26 and the base of Q28. The other end of R26 is connected to the emitter and ground terminal of Q28. The collector of Q28 is connected to the corresponding bias current terminal.
[0043] The Zener diodes Z2, Z3, Z4, Z5, Z6, and Z7 form a Zener diode group, which contains 1 to 1000 Zener diodes.
[0044] The positions of the Zener diodes Z2, Z3, Z4, Z5, Z6, Z7 and resistor R25 are not specified.
[0045] 6. Electrostatic Protection Circuit Module like Figure 8 As shown, the electrostatic protection module consists of NPN transistors Q29 and Q31, and PNP transistors Q30 and Q32.
[0046] The collector of transistor Q29 is connected to the collector of Q30, the base of Q30, and the VIN terminal. The collector of Q30 is connected to the collector of Q31 and the VOUT terminal. The emitter and base of Q31 are connected to the emitter and base of Q32 and the VOUT2 terminal. The collector of Q32 is grounded.
[0047] The bases and emitters of transistors Q29, Q30, Q31, and Q32 are shorted together and reversed in pairs to form two sets of bidirectional antistatic diodes.
[0048] and Figure 2 The complete circuit diagram shown is independent and, with Figure 8 The corresponding circuit ports are connected in the circuit diagram.
[0049] The polarity of the transistors described in the above circuits can be changed according to the actual situation, such as changing an NPN transistor to a PNP transistor, an NPN transistor to an NMOS transistor, a PNP transistor to a PMOS transistor, or an IGBT or other active devices.
[0050] The type of resistor described in the above circuit is not limited; it can be an epitaxial layer resistor, a base region resistor, a collector resistor, an emitter resistor, etc.
[0051] The working principle of the high-stability voltage regulator integrated circuit is as follows: like Figure 3As shown, after receiving an external voltage, the startup circuit of the bias circuit module allows current to flow through resistor R1, providing a signal to the bias circuit and enabling it to start working. The bias circuit module uses multiple mirrored current sources to mirror and replicate the same or a certain proportion of the current, providing signals to other subsequent circuit modules.
[0052] The startup bias circuit includes resistors R1, R2, R3, R4, R5, R6, R8, R9, and R10, a Zener diode Z1, and transistors Q1, Q2, Q3, Q4, Q5, Q10, and Q11. When the power is turned on, current flows through R1, R8, and R10 of the startup circuit, causing transistor Q11 to turn on, thereby activating the bias circuit by receiving a signal from the startup circuit. The bias circuit starts with Q11. Q10, along with R9, forms a current mirror with Q11. The current flowing through Q10 is a mirror copy of the current flowing through Q11, resulting in the same or a certain proportion of the current. Similarly, Q1 and Q10 form a current mirror, Q2 and Q1 form a current mirror, Q3 and Q2 form a current mirror, Q4 and Q3 form a current mirror, and Q5 and Q4 form a current mirror. The currents generated by Q3, Q4, and Q5 provide signals to the next-level circuit modules. Resistors R2, R3, R4, R5, and R6 act as resistors for transistors Q1, Q2, Q3, Q4, and Q5, respectively, stabilizing their static operating points. Zener diode Z1 is connected in reverse to the lower end of resistor R1, causing the starting current to flow towards Q11.
[0053] like Figure 4 As shown, the amplification compensation output circuit module receives the signal from the bias circuit, thereby starting to amplify the signal and stabilize the output. The compensation circuit is used to monitor the amplification current. Once the circuit I3 through which the amplification current passes is too large or too small, its direction can be adjusted by the compensation circuit.
[0054] For ease of understanding, since the amplification compensation circuit cannot operate independently, the starting bias circuit is also drawn. The amplification circuit consists of a bandgap reference voltage circuit and three emitter followers (or current amplifiers). Transistors Q15, Q16, Q17, and Q18, along with resistors R12 and R13, form the bandgap reference voltage circuit, which can achieve a fixed output and is not affected by temperature. Transistors Q12, Q13, and Q14 form a three-stage emitter follower amplifier circuit. Q14 is connected to the current source Q4 in the bias circuit, thus forming a circuit with the current source as the active load, greatly enhancing the amplification capability of the transistor. Transistor Q13 is connected to the power supply and resistor R11. Q12 is connected to the current source Q3 in the bias circuit and Vout2. This three-stage emitter follower amplifier circuit is designed so that Q12 and Q14 are started by the bias circuit. If the intermediate stage Q13 were also started by the bias circuit, the current pressure on its bias circuit would be too great, which would not stabilize the circuit. Therefore, the intermediate stage Q13 draws current directly from the power supply. The base of transistor Q14 is connected to the upper part of compensation capacitor C1, and the negative terminal of the reference circuit is connected to the lower part of ...
[0055] The compensation circuit consists of transistors Q6, Q7, Q26, and Q27, and resistors R22 and R23. Q6 and Q7 form a proportional current mirror, with the current flowing through Q6 being several to hundreds of times larger than the current flowing through Q7. Resistor R22 is connected to the base of transistor Q26 at the same voltage level. Therefore, by controlling the value of R22, compensation for the I3 current can be achieved. When the I3 current is too small to allow the amplifier circuit to operate normally, the value of resistor R22 is adjusted to increase the Ib of transistor Q26. Since Ic is βIb, the current of Q7 increases, and the current of Q6 also increases by tens or hundreds of times, thereby increasing the I3 current. Conversely, when the I3 current is very large, the value of R22 is adjusted to perform negative compensation for the I3 current.
[0056] The transistors Q8 and Q9, diode D1, and resistors R24 and R27 form the output circuit module. The final regulated voltage value of the entire circuit can be determined by adjusting transistors Q8 and Q9. In the output circuit: the positive terminal of diode D1 is connected to the base of transistor Q9, increasing the base voltage of transistor Q9 and keeping it normally turned on, thus allowing transistors Q8 and Q9 to function normally as Darlington composite transistors. Transistor Q27 and resistor R7 are connected to the base of transistor Q8, providing bias for transistor Q8.
[0057] like Figure 5As shown, the temperature protection circuit module is turned on by the signal from the bias circuit Q5, and the temperature of the entire circuit is detected in real time through the current I3. The transistor is set to have a negative temperature coefficient. Once the temperature reaches a certain level, such as 155°C, the transistor turns on, which means that all the current is introduced to the ground terminal to protect the entire circuit from the effects of overheating.
[0058] For ease of viewing, a portion of the bias circuit, compensation circuit, and output circuit are shown in the diagram. The temperature protection circuit consists of transistors Q19, Q20, Q21, and Q22, and resistors R14, R15, R16, and R17. Transistors Q19 and Q21, along with resistor R14, are simultaneously controlled by the current I5 generated by transistor Q5 in the bias circuit. When the bias circuit provides a signal, the circuit starts operating. Q19 and Q20 form a complementary transistor structure, and R14 stabilizes the static operating point of transistor Q20. R15 is the output resistance of transistor Q20. Together with transistor Q21 and its resistor R16, it provides a signal to the base of the most crucial transistor Q22 in the over-temperature protection circuit. Transistor Q22 detects the temperature of I3; when the temperature exceeds the set temperature, all current flows away through R17 below transistor Q22, ensuring circuit stability.
[0059] like Figure 6 , Figure 7 As shown, the safe operating area module (current protection circuit module, current protection circuit module) is used to detect the current and voltage of the circuit in real time. Once the current exceeds the set value or the voltage is too high, the current will flow out from the corresponding circuit to the ground terminal, so that the large current does not pass through the compensation circuit and the output circuit, thus protecting the circuit.
[0060] The safe operating area module includes transistors Q23, Q24, Q25, and Q28; resistors R18, R19, R20, R21, R25, and R26; compensation capacitor C3; and Zener diodes Z2, Z3, Z4, Z5, Z6, and Z7. Zener diode Z7 is connected to the base of transistor Q28. When the I3 current exceeds a set value, this module shuns the current from the collector to the emitter branch of transistor Q23, from R18 to the collector to the emitter branch of transistor Q24, and from resistors R20 to R21 to the branch of transistor Q25, respectively, to VOUT2 and VOUT. Resistor R19 is the input resistance of transistors Q24 and Q25, making them more stable. This three-branch current shunting design gives the module a strong current shunting capability, protecting the compensation circuit module and output circuit in the event of a large current surge. Alternatively, when the power supply voltage is too high, since this module is connected in parallel with other modules and the voltage is consistent, the Zener diode set in this module will gradually turn on. When all modules are turned on, the current will directly flow through the circuit of this module to the ground terminal, protecting other modules.
[0061] Figure 2 Then it is Figures 3 to 7 The overall circuit diagram shows that all modules together form a complete voltage regulator circuit with multiple protection circuits.
[0062] like Figure 8 As shown, the electrostatic protection module is used for Figure 2 The corresponding port connection of the regulated power supply circuit shown is such that the static electricity at the port may be as high as several thousand volts. When the circuit is not working, if the port of the regulated power supply circuit encounters a sudden large voltage, the electrostatic protection module will start to work and absorb the static electricity.
[0063] The electrostatic discharge protection module includes transistors Q29, Q30, Q31, and Q32, which are connected in reverse to form two sets of reverse diodes to resist electrostatic discharge.
[0064] The effect diagram of the high-stability voltage regulator integrated circuit is shown below. Figure 9 , Figure 10 As shown, the voltage is regulated at around 3.3V.
[0065] All of the circuit modules described above can work independently, and various protection circuit modules can be partially modified to adapt to other circuits.
[0066] This circuit is designed to ensure that the voltage across resistor R28 remains constant. When external fluctuations cause the voltage across resistor R28 to change, the excess current will be absorbed by the amplification and compensation output circuit, thus keeping the current flowing through resistor R28 constant, i.e., voltage regulation.
[0067] In the above embodiments, the transistor of the active device can be changed to an N-type transistor or a P-type transistor depending on the actual situation. Furthermore, the active device can also be a MOSFET, with the collector of the transistor corresponding to the source of the MOSFET, the emitter of the transistor corresponding to the drain of the MOSFET, and the base of the transistor corresponding to the gate of the MOSFET. Alternatively, in another preferred embodiment, the active device can also be an IGBT, with the base of the transistor corresponding to the gate of the IGBT.
[0068] Finally, it should be noted that the above embodiments are merely examples for clear illustration. This invention includes, but is not limited to, the above embodiments, and it is neither necessary nor possible to exhaustively describe all possible implementations. Those skilled in the art can make other variations or modifications based on the above description. All implementation schemes that meet the requirements of this invention are within the protection scope of this invention.
Claims
1. A high stability voltage regulator integrated circuit, characterized by comprising: include: Start-up bias circuit module, amplification compensation output circuit module, temperature protection circuit module, safe operating area protection circuit module, electrostatic protection module; The startup bias circuit module includes a startup circuit and a bias circuit. After receiving an external voltage, the startup circuit provides a signal to the bias circuit, causing the bias circuit to start working. The bias circuit module provides operating current to other circuit modules by mirroring and replicating the same or a certain proportion of current through multiple mirror current sources. The amplification and compensation output circuit module includes an amplification circuit, a reference circuit, a compensation circuit, and an output circuit. The amplification and compensation output circuit module receives the bias current from the bias circuit, thereby starting current amplification and voltage regulation output. The compensation circuit is used to monitor the amplified current. If the monitored current is too large or too small, its direction can be adjusted through the compensation circuit. The reference circuit generates a reference power supply, and the reference voltage is regulated and controlled by the voltage divider sampling network at the reference voltage output terminal. The output circuit amplifies the power of the reference voltage. The temperature protection circuit module turns on after receiving the bias current configured by the bias circuit. It monitors the temperature of the entire circuit in real time by monitoring the current. The transistors in the module have a set negative temperature coefficient. Once the temperature reaches the set level, the transistors turn on, which means that all the current is introduced to the ground terminal to protect the entire circuit from the effects of overheating. The safe operating area protection circuit module includes a current protection circuit module and a voltage protection circuit module, which are used to detect the current and voltage of the circuit in real time. Once the current exceeds the set value or the voltage is too high, the current will flow out from the protection circuit to the ground terminal, so that the large current does not pass through the compensation circuit and the output circuit. The electrostatic discharge (ESD) protection module is connected to the input, output, reference voltage, and ground terminals of the voltage regulator integrated circuit to provide ESD protection for each port. When the circuit is not working, the voltage regulator integrated circuit may encounter instantaneous high voltages of up to several thousand volts of static electricity. At this time, the ESD protection module starts to work and absorbs the static electricity. The positive terminal of the start-up bias circuit module is connected to the input voltage VIN terminal, and the negative terminal is connected to the reference power supply VOUT2 terminal; the negative terminals of the temperature protection circuit module and the current protection circuit module are connected to the reference power supply VOUT2 terminal; the negative terminal of the voltage protection circuit module is connected to ground, and the power supply terminal is connected to the input voltage VIN terminal; the bias current output terminal is connected to the corresponding bias current input terminals of the amplification compensation output circuit module, the temperature protection circuit module, the current protection circuit module, and the voltage protection circuit module, respectively; the output terminals of the temperature protection circuit module and the current protection circuit module are connected to the corresponding ports of the amplification compensation output circuit module, and the reference voltage output terminal of the amplification compensation output circuit module is grounded through a voltage divider sampling network; The amplification and compensation output circuit module includes NPN transistors Q9, Q12, Q13, Q17, Q18, Q26, and Q27; PNP transistors Q6, Q7, Q8, Q14, Q15, and Q16; resistors R7, R11, R12, R13, R14, R22, R23, R24, R28, and R29; capacitors C1 and C2; and diode D1. The collector of Q13 is connected to the emitters of Q6 and Q7, one end of R7, the emitter of Q8, the collector of Q9, and the input power supply VIN terminal. The collector of Q12 is connected to the corresponding bias current terminal, the emitters of Q15 and Q16, the collector of Q6, the base of Q26, and one end of R22. The base of Q12 is connected to the emitter of Q13 and one end of R11. The emitter of Q14 is connected to the corresponding bias current terminal and the base of Q13. The base of Q14 is connected to one end of C1, one end of C2, and the collectors of Q15 and Q17. The other end of C2 is connected to one end of R13, one end of R28, and one end of R29. The other end of R29 is grounded. The emitter of Q17 is connected to the other end of R13 and one end of R12. The other end of R12 is connected to the emitter of Q18. The collector of Q18 is connected to the collector of Q16, the base of Q15 and Q16. The collector of Q26 is connected to the collector of Q7, the base of Q6 and Q7. The emitter of Q26 is connected to one end of R23. The other end of R23 is connected to the emitter of Q27, the cathode of D1, and one end of R24. The collector of Q27 is connected to the other end of R7 and the base of Q8. The collector of Q8 is connected to the base of Q9 and the anode of D1. The emitter of Q9 is connected to the VOUT terminal through R27. The emitter of Q12 is connected to the other end of R11, the collector of Q14, the other end of C1, the other end of R28, the base of Q17 and Q18, the other end of R24, and the VOUT2 terminal. The transistors Q12, Q13, and Q14 form a three-stage emitter follower amplifier circuit. The transistors Q15, Q16, Q17, and Q18, together with resistors R12 and R13, form a bandgap reference voltage circuit. The capacitors C1 and C2 are system stability compensation capacitors, and the resistor R28 is the output voltage sampling resistor; Q6 and Q7 form a proportional current mirror, and the collector current of Q6 is 1 to 500 times that of the collector current of Q7.
2. The high-stability voltage regulator integrated circuit as described in claim 1, characterized in that: The startup bias circuit module includes resistors R1, R2, R3, R4, R5, R6, R8, R9, and R10, Zener diode Z1, PNP transistors Q1, Q2, Q3, Q4, and Q5, and NPN transistors Q10 and Q11. One end of R1, R2, R3, R4, R5, and R6 is connected to the input voltage VIN terminal. The other end of R1 is connected to one end of R8 and the cathode of Z1. The other end of R2 is connected to the emitter of Q1. The other end of R3 is connected to the emitter of Q2. The other end of R4 is connected to the emitter of Q3. The other end of R5 is connected to the emitter of Q4. The other end of R6 is connected to the emitter of Q5. The collector of Q1 is connected to the collector of Q10, the base of Q1, and the base of Q2. The bases of Q3, Q4, and Q5 are connected. The base of Q10 is connected to the base of Q11, the other end of R8, the collector of Q2, and one end of R10. The other end of R10 is connected to the collector of Q11, the base of Q19, and the base of Q20. One end of R9 is connected to the emitter of Q10. The anode of Z1 is connected to the other end of R9, the emitter of Q11, and the VOUT2 terminal. The collectors of Q3, Q4, and Q5 output bias currents I3, I4, and I5, respectively. Starting from Q11, Q11, together with Q10, Q1, Q2, Q3, Q4, and Q5, forms a mirror current mirror; R2, R3, R4, R5, and R6 provide the static operating points for transistors Q1, Q2, Q3, Q4, and Q5, respectively.
3. A high stability voltage regulator integrated circuit as claimed in claim 1, characterized in that: The temperature protection circuit module includes NPN transistors Q20 and Q22, PNP transistors Q19 and Q21, and resistors R14, R15, R16, and R17. The emitters of Q19 and Q21 are connected to the corresponding bias current terminals and one end of R14. The base of Q19 is connected to the base of Q20. The collector of Q20 is connected to the base of Q21 and the other end of R14. The emitter of Q20 is connected to one end of R15. The collector of Q21 is connected to the base of Q22 and one end of R16. The collector of Q22 is connected to the corresponding bias current terminal. The emitter of Q22 is connected to one end of R17. The collector of Q19 is connected to the other end of R15, the other end of R16, one end of R17, and the vout2 terminal. Q22 is a negative temperature coefficient transistor used to detect the overall circuit temperature.
4. A high stability voltage regulator integrated circuit as claimed in claim 1, characterized in that: The current protection circuit module includes NPN transistors Q23, Q24, and Q25, resistors R18, R19, R20, and R21, and a compensation capacitor C3. The collector of Q23 is connected to the corresponding bias current terminal, one end of R18, and one end of R20. The emitter of Q23 is connected to the emitter of Q24 and the VOUT2 terminal. The base of Q23 is connected to the collector of Q24, the other end of R18, and one end of C3. The base of Q24 is connected to the other end of C3 and one end of R19. The collector of Q25 is connected to the other end of R19 and one end of R21. The base of Q25 is connected to the other end of R21 and the other end of R20. The emitter of Q25 is connected to the VOUT terminal.
5. A high stability voltage regulator integrated circuit as claimed in claim 1, characterized in that: The voltage protection circuit module includes Zener diodes Z2, Z3, Z4, Z5, Z6, and Z7, resistors R25 and R26, and an NPN transistor Q28, whose positive terminal is connected to the VIN terminal and whose lower terminal is grounded. The cathode of Z2 is connected to the VIN terminal. The anode of Z2 is connected in series with Z3 and Z4 in the same direction, and then connected to the cathode of Z5 through R25. The anode of Z5 is connected in series with Z6 and Z7 in the same direction, and then connected to one end of R26 and the base of Q28. The other end of R26 is connected to the emitter and ground terminal of Q28. The collector of Q28 is connected to the corresponding bias current terminal. The Zener diodes Z2, Z3, Z4, Z5, Z6, Z7 and resistor R25 are connected in series, with the negative terminal of the Zener diode facing the positive power supply terminal and the positive terminal facing the ground terminal.
6. A high stability voltage regulator integrated circuit as claimed in claim 1, characterized in that: The electrostatic protection module consists of NPN transistors Q29 and Q31, and PNP transistors Q30 and Q32. The collector of transistor Q29 is connected to the collector of Q30, the base of Q30, and the VIN terminal. The collector of Q30 is connected to the collector of Q31 and the VOUT terminal. The emitter and base of Q31 are connected to the emitter and base of Q32 and the VOUT2 terminal. The collector of Q32 is grounded.
7. A high-stability voltage regulator integrated circuit as described in claim 1, characterized in that, include: PNP transistors Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, Q14, Q15, Q16, Q19, Q21, Q30, Q32; NPN transistors Q8, Q9, Q10, Q11, Q12, Q13, Q17, Q18, Q20, Q22, Q23, Q24, Q25, Q26, Q27, Q28, Q29, Q31; resistors R1, R2, R...
3. R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, R26, R27, R28, R29; Zener diodes Z1, Z2, Z3, Z4, Z5, Z6, Z7; capacitors C1, C2, C3; diode D1. One end of R1, R2, R3, R4, R5, R6, and R7, the collector of Q13, the emitters of Q6, Q7, and Q8, and the cathode of Z2 are connected to the input power supply VIN terminal; the other end of R1 is connected to one end of R8 and the cathode of Z1, the other end of R2 is connected to the emitter of Q1, the other end of R3 is connected to the emitter of Q2, the other end of R4 is connected to the emitter of Q3, the other end of R5 is connected to the emitter of Q4, the other end of R6 is connected to the emitter of Q5, the other end of R7 is connected to the base of Q8 and the collector of Q27, the base of Q1, the collector of Q1, the collector of Q10, the base of Q3, the base of Q4, and the base of Q5 are connected, and the base of Q7 is connected... The collectors of Q7 and Q26 are connected. The emitter of Q26 is connected to one end of R23. The base of Q27 is connected to the other end of R22. The emitter of Q27 is connected to the other end of R23, the cathode of D1, and one end of R24. The base of Q8, the other end of R7, and the collector of Q27 are connected. The collector of Q8, the base of Q9, and the anode of D1 are connected. Z2, Z3, and Z4 are connected in series in the same direction. The anode of Z4 is connected to one end of R25. The other end of R25 is connected to the cathode of Z5. Z5, Z6, and Z7 are connected in series in the same direction. The anode of Z7 is connected to the base of Q28 and one end of R26. The other end of R26 is connected to the emitter of Q28, one end of R29, and... Ground connection; the other end of R8 is connected to the collector of Q2, one end of R10, and the bases of Q10 and Q11; the emitter of Q10 is connected to one end of R9; the collector of Q11 is connected to the other end of R10 and the bases of Q19 and Q20; the collector of Q12 is connected to the collector of Q3, the emitters of Q15 and Q16, the collectors of Q22 and Q23, one end of R18, one end of R20, one end of R22, the collector of Q6, and the collector of Q28; the base of Q12 is connected to the emitter of Q13 and one end of R11; the base of Q13 is connected to the collector of Q4 and the emitter of Q14; the base of Q14 is connected to one end of C1, one end of C2, and Q15 and Q16. The collector of Q17 is connected; the emitter of Q17 is connected to one end of R12 and one end of R13; the emitter of Q18 is connected to the other end of R12; the collector of Q18 is connected to the collector of Q16; and Q15 is connected to the base of Q16. The other end of C2 is connected to the other end of R13, the other end of R29, and one end of R26; the other end of R29 is grounded; the emitter of Q19 is connected to the collector of Q5, one end of R14, and the emitter of Q21; the collector of Q20 is connected to the other end of R14 and the base of Q21; the emitter of Q20 is connected to one end of R15; the collector of Q21 is connected to one end of R16 and the base of Q22; and the collector of Q22 is connected to one end of R17.The base of Q23 is connected to the other end of R18, one end of C3, and the collector of Q24. The base of Q24 is connected to the other end of C3 and one end of R19. The collector of Q25 is connected to the other end of R19 and one end of R21. The base of Q25 is connected to the other end of R21 and the other end of R20. The emitter of Q25 is connected to the emitter of Q9 and one end of R27. The other end of R27 is connected to the output voltage VOUT terminal. The anode of Z1 is connected to the other end of R9, the emitter of Q11, the emitter of Q12, the other end of R11, the collector of Q14, the other end of C1, the bases of Q17 and Q18, the collector of Q19, the other end of R15, the other end of R16, the other end of R17, the emitters of Q23 and Q24, the other end of R24, the other end of R28, and the VOUT2 terminal. The collector of Q29 is connected to the base of Q30, the emitter of Q30, and the VIN terminal. The collector of Q30 is connected to the collector of Q31 and the VOUT terminal. The emitter and base of Q31, the emitter and base of Q32, and the VOUT2 terminal are connected. The collector of Q32 is connected to the ground terminal.
8. A high-stability voltage regulator integrated circuit as described in any one of claims 1-7, characterized in that: The type of resistor is epitaxial layer resistor, base region resistor, collector resistor, or emitter resistor.
9. A high-stability voltage regulator integrated circuit as described in any one of claims 1-7, characterized in that: All active devices in the integrated circuit are transistors.