LED chip and manufacturing method thereof

Abstract

The application provides an LED chip and a manufacturing method thereof. An ODR structure is formed by setting the mutual structural relationship of the second electrode (metal reflection), the passivation layer (dielectric layer), the second contact hole, the current blocking layer (dielectric layer) and the transparent conductive layer (conductive layer). Total reflection of light can be formed in the composite area, so that the light corresponding to the composite area of the second electrode is reflected and taken out from the upper surface of the LED chip, thereby effectively improving the light extraction efficiency. Meanwhile, the current blocking layer is arranged directly below the second electrode, so that the current injection phenomenon caused by the current injection of the LED chip from the second electrode (P-type electrode) and concentrated directly below the electrode can be well prevented.

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