Ion implantation apparatus and ion implanter

Abstract

An ion implantation apparatus and ion implanter are provided. The apparatus can include a drift tube assembly defining a triple gap configuration and arranged to accelerate and transport an ion beam along a beam path. The apparatus can include a resonator outputting a radio frequency signal to the drift tube assembly and a radio frequency quadrupole triplet connected to the drift tube assembly and arranged around the beam path.

Description

Technical Field

[0001] This disclosure generally relates to ion implantation devices, and more specifically to ion implantation devices and high-energy beam ion implantation machines. Background Technology

[0002] Ion implantation is a process that introduces dopants or impurities into a substrate through bombardment. An ion implantation system may include an ion source and a series of beamline assemblies. The ion source may include a chamber for generating ions. The ion source may also include a power source and an extraction electrode assembly located near the chamber. The beamline assembly may include, for example, a mass analyzer, a first acceleration or deceleration stage, a collimator, and a second acceleration or deceleration stage. Much like a series of optical lenses used to manipulate a beam, the beamline assembly can filter, focus, and manipulate ions or ion beams having specific types, shapes, energies, and / or other properties. The ion beam passes through the beamline assembly and can be guided to the substrate mounted on a stage or fixture.

[0003] Implantable devices capable of generating ion energies of approximately 1 MeV or greater are commonly referred to as high-energy ion implanters or high-energy ion implantation systems. One type of high-energy ion implanter is called a linear accelerator, or LINAC, in which a series of electrodes arranged as tubes conducts and accelerates the ion beam to increasingly higher energies along the tubes, while the electrodes receive a power voltage signal. Known LINACs are driven by radio frequency voltages in the range of 13.56 MHz–120 MHz.

[0004] One problem with operating a radiofrequency LINAC ion implanter is that during ion beam acceleration, the ion beam splits into ion clusters along the propagation direction (Z direction). The natural tendency of these ion clusters is to spread both laterally (in the X and Y directions) and longitudinally (in the Z direction, or temporally equivalently). Known methods for focusing ions are typically complex and may require excessively long acceleration phases to focus the accelerated ion clusters.

[0005] In some methods, lateral focusing of ions can be performed by adding DC quadrupoles. These DC quadrupoles can be added along the LINAC at various stages that contain drift tube electrodes for accelerating the ion beam. Such DC quadrupoles can be fabricated as electrostatic or magnetic components that apply a DC quadrupole field to the passing ion beam. Adding these DC quadrupoles to the LINAC inevitably increases the cost, size, and complexity of the beamline and associated control systems.

[0006] This disclosure is made in consideration of these and other factors. Summary of the Invention

[0007] In one embodiment, an apparatus is provided. The apparatus may include a drift tube assembly defining a triple-gap configuration and arranged to accelerate and transmit an ion beam along a beam path. The apparatus may include a resonator that outputs radio frequency signals to the drift tube assembly and a radio frequency quadrupole triplet connected to the drift tube assembly and arranged around the beam path.

[0008] In another embodiment, an ion implanter may include an ion source that generates a continuous ion beam and a beam gatherer disposed downstream of the ion source and arranged to convert the continuous ion beam into a focused ion beam. The ion implanter may include a linear accelerator downstream of the beam gatherer and comprising multiple acceleration stages. A given stage of the multiple acceleration stages may include a drift tube assembly comprising a plurality of drift tubes, defining a triple-gap configuration, and arranged to accelerate the focused ion beam along a beam path. The given stage may include a resonator that outputs a radio frequency (RF) signal to the drift tube assembly and an RF quadrupole triplet connected to the drift tube assembly and arranged around the beam path.

[0009] In another embodiment, a device may include a drift tube assembly comprising a plurality of drift tubes arranged to accelerate and transmit an ion beam along a beam path. The device may include a resonator that outputs a radio frequency signal to the drift tube assembly and a quadrupole arrangement arranged around the beam path. The quadrupole arrangement may be integrated into the surface of the plurality of drift tubes of the drift tube assembly, and wherein the quadrupole arrangement defines a sinusoidal or elliptical shape. Attached Figure Description

[0010] Figure 1 An exemplary device according to an embodiment of this disclosure is shown.

[0011] Figure 2 Another exemplary device according to an embodiment of this disclosure is shown.

[0012] Figure 3 Another exemplary device according to an embodiment of the present disclosure is shown.

[0013] Figure 4 Another exemplary device is shown according to an additional embodiment of this disclosure.

[0014] Figure 5 Details of the geometry of the device according to an embodiment of this disclosure are shown.

[0015] Figure 6A and Figure 6B Depicts the geometry of ion beam focusing according to embodiments of the present disclosure.

[0016] Figure 7A Another exemplary device according to another embodiment of the present disclosure is shown.

[0017] Figure 7B and Figure 7C The simulation results show the ion beam focusing of the apparatus arranged according to an embodiment of the present disclosure as a function of the gap size.

[0018] Figure 8 An exemplary ion implantation device according to an embodiment of this disclosure is depicted.

[0019] The accompanying drawings are not necessarily to scale. The drawings are merely illustrative and not intended to depict specific parameters of this disclosure. The drawings are intended to depict exemplary embodiments of this disclosure and are therefore not to be considered as limiting the scope. In the drawings, the same numbers denote the same elements. Detailed Implementation

[0020] The apparatus, systems, and methods according to this disclosure will now be described more fully below with reference to the accompanying drawings, which illustrate embodiments of the systems and methods. The systems and methods may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the systems and methods to those skilled in the art to which the invention pertains.

[0021] Terms such as “top,” “bottom,” “upper,” “lower,” “vertical,” “horizontal,” “lateral,” and “longitudinal” may be used herein to describe the relative placement and orientation of components of a semiconductor manufacturing apparatus shown in the figures, as well as the constituent parts of these components. Terms may include specifically referenced words, their derivatives, and words with similar meanings.

[0022] When used herein, an element or operation described in the singular and beginning with the word "a (a or an)" is understood to potentially include multiple elements or operations. Furthermore, references to "one embodiment" in this disclosure are not intended to exclude the existence of additional embodiments that also incorporate the described features.

[0023] This paper provides methods for improved high-energy ion implantation systems and components based on beamline architectures, particularly ion implanters based on linear accelerators. For brevity, the ion implantation system may also be referred to as an "ion implanter" herein. Various embodiments require novel methods that provide improved ion beam control capabilities, particularly improved ion beam focusing, during the acceleration phase through a linear accelerator.

[0024] Figure 1An exemplary device according to an embodiment of this disclosure is shown. Device 100 may represent the acceleration phase of a linear accelerator, such as a linear accelerator arranged within an ion implanter, as described below for... Figure 8 The device 100, as discussed, includes a drift tube assembly 104 and related components for accelerating the ion beam during the acceleration phase of a linear accelerator. Specifically, the device 100 defines a triple-gap configuration through which the ion beam is conducted via three acceleration gaps within the device 100. Thus, the device 100 is arranged to transmit and accelerate the bundled ion beam (shown as ion beam 130) along a beam path 140 extending along the central region of the device 100.

[0025] The drift tube assembly 104 is formed by multiple drift tubes, including a first ground drift tube 112, a second ground drift tube 118, a first power drift tube 114 disposed downstream of the first ground drift tube 112, and a second power drift tube 116 disposed downstream of the first power drift tube 114. The drift tube assembly 104 is coupled to a resonator 102 arranged to output a radio frequency signal. Figure 1 In this configuration, the opposite ends of resonator 102 are connected to a first power drift transistor 114 and a second power drift transistor 116. Therefore, when the RF power generator 120 supplies RF power to the resonator 102, a first-polarity RF voltage is generated on the first power drift transistor 114, while a second-polarity RF voltage is generated on the second power drift transistor 116. The generated RF voltages have a sinusoidal time-varying variation and a 180-degree phase difference, meaning that the voltage on the first power drift transistor 114 is equal to but opposite in polarity to the voltage on the second power drift transistor 116. Therefore, a sinusoidal time-varying electric field develops within the gap GAP2, is proportional to twice the instantaneous value of the RF voltage signal, and varies according to the frequency of the applied RF voltage signal. Similarly, time-varying electric fields with the same frequency but different amplitudes develop in the gap GAP1 between the first ground drift tube 112 and the first power drift tube 114, and in the gap GAP3 between the second power drift tube 116 and the second ground drift tube 118.

[0026] Note that device 100 is arranged to receive ion beam 130 as a clustered ion beam, wherein ion beam 130 may be a continuous ion beam upstream of device 100 and may be clustered by a clusterer (not shown) arranged according to a known LINAC configuration. Therefore, by appropriately arranging the ion cluster of ion beam 130 to reach gaps GAP1, GAP2, and GAP3, the ion beam can be accelerated by an electric field created when the RF voltage generated on the power electrodes reaches its maximum value and has the correct polarity, i.e., when the voltage drop between the gaps is equal to or less than twice the voltage amplitude of gaps (GAP1 and GAP3) and the voltage amplitude of gap GAP2. In this way, a given cluster can generally be accelerated along the Z-axis of the Cartesian coordinate system shown. Simultaneously, the ions in the cluster may tend to defocus in the X and Y directions. To counteract this tendency, device 100 is equipped with a quadrupole arrangement 108, which is connected to the drift tube assembly 104 and arranged around the beam path 140.

[0027] As shown, the quadrupole arrangement 108 is arranged as a triplet, comprising a first quadrupole 108A, which is formed on the downstream portion of the first ground drift tube 112 and the upstream portion of the first power drift tube 114. The quadrupole arrangement 108 also includes a second quadrupole 108B, which is formed on the downstream portion of the first power drift tube 114 and the upstream portion of the second power drift tube 116. The quadrupole arrangement 108 further includes a third quadrupole 108C, which is formed on the downstream portion of the second power drift tube 116 and the upstream portion of the second ground drift tube 118.

[0028] A given quadrupole arrangement 108 comprises two pairs of protrusions, wherein the protrusions of a given pair are arranged on opposite sides of the beam path 140 and connected to a given drift tube. To define the quadrupole geometry, the protrusions may be arranged such that a first line extending through the first pair of protrusions (see line 152) is rotated 90 degrees relative to a line extending through the second pair of protrusions (see line 154) about an axis generally defined by the beam path 140. Although shown as cylinders, according to other embodiments, the protrusions may be of any suitable shape.

[0029] Note that the quad arrangement 108 can be formed of a conductive material electrically connected to the drift tube assembly 104, so that the potential of a given quad assembly of the first quad 108A, the second quad 108B, or the third quad 108C remains at the same potential as the potential of the drift tube connected to the given quad assembly. Therefore, the quad arrangement 108 forms a radio frequency quad triplet, which generates a time-varying quad electric field of alternating polarity, with the quad electric field and the accelerating electric field extending along the Z direction between the gaps (GAP1, GAP2, and GAP3) at the same frequency.

[0030] During operation, as the ion beam 130 is accelerated through device 100 and an RF voltage signal is applied to the drift tube assembly 104, the quadrupole arrangement 108 introduces a quadrupole moment into each of the gaps (GAP1, GAP2, and GAP3) via a first quadrupole 108A, a second quadrupole 108B, and a third quadrupole 108C. These quadrupoles can produce a typically balanced quadrupole triplet. According to some embodiments of this disclosure, the relative lengths of the gaps (GAP1, GAP2, and GAP3) (along the Z direction) and the quadrupole intensities of the gaps can be adjusted independently of each other to achieve suitable focusing of the ion beam 130. In this way, a generally similar focused intensity in the X and Y directions can be achieved, with similar quadrupole intensity fields in alternating directions, such as... Figure 1 As indicated by the arrows in the diagram. This result can be achieved by optimizing the size of the protrusions forming the corresponding quadrupoles on each side of GAP 1, GAP 2, and GAP 3.

[0031] Note that in Figure 1 In some embodiments, the cylindrical shape forming the corresponding quadrupoles is not ideal because such cylinders exhibit sharp corners. These sharp corners may not be suitable for maintaining stability in high-field environments where relatively high electric fields are generated between the gaps (GAP1, GAP2, or GAP3). Even in a vacuum environment, such sharp corners can cause field enhancement and trigger electrostatic breakdown. Therefore, in other embodiments, smoother, more rounded features can be used to form the quadrupoles.

[0032] Figure 2 An embodiment of a drift tube assembly 204 is presented, which can be generally configured as follows: Figure 1 The drift tube assembly 204 discussed is used to accelerate and shape the ion beam. The drift tube assembly 204 is formed of multiple drift tubes, including a first grounded drift tube 212, a second grounded drift tube 218, a first power drift tube 214 disposed downstream of the first grounded drift tube 212, and a second power drift tube 216 disposed downstream of the first power drift tube 214. In this embodiment, a quadrupole arrangement 208 is integrally formed with the drift tube assembly 204, wherein the quadrupole arrangement 208 is specifically formed by shaping portions of each drift tube of the drift tube assembly 204.

[0033] More specifically, the quadrupole arrangement 208 is arranged as a triplet, comprising a first quadrupole 208A formed on the downstream portion of the first ground drift tube 212 and the upstream portion of the first power drift tube 214. The quadrupole arrangement 208 also includes a second quadrupole 208B formed on the downstream portion of the first power drift tube 214 and the upstream portion of the second power drift tube 216. The quadrupole arrangement 208 further includes a third quadrupole 208C formed on the downstream portion of the second power drift tube 216 and the upstream portion of the second ground drift tube 218. Similar to the quadrupole arrangement 108, while the ion beam is conducted and accelerated along the Z direction through the drift tube assembly 204, the quadrupole arrangement 208 can be used to focus the ion beam (not shown) in the X and Y directions.

[0034] exist Figure 2 In some embodiments, the first quadrupole 208A, the second quadrupole 208B, and the third quadrupole 208C define a sinusoidal shape, as shown. According to some embodiments, the shapes of the various opposing drift tubes can form a complementary match. Specifically, the downstream surface of the first ground drift tube 212 can form a complementary match with the upstream surface of the first power drift tube 214. Similarly, the downstream surface of the first power drift tube 214 can form a complementary match with the upstream surface of the second power drift tube 216, while the downstream surface of the second power drift tube 216 forms a complementary match with the upstream surface of the second ground drift tube 218. In other words, the opposing surfaces forming each quadrupole, when placed together, can be coupled and matched as a three-dimensional puzzle.

[0035] Figure 3 The device shown is a drift tube assembly 304, which can be generally used for... Figure 1 and Figure 2 The drift tube assembly 104 or drift tube assembly 204 discussed are used to accelerate and shape the ion beam. The drift tube assembly 304 is formed of a plurality of drift tubes, including a first grounded drift tube 312, a second grounded drift tube 318, a first power drift tube 314 disposed downstream of the first grounded drift tube 312, and a second power drift tube 316 disposed downstream of the first power drift tube 314. In this embodiment, a quadrupole arrangement 308 is integrally formed with the drift tube assembly 304, wherein the quadrupole arrangement 308 is formed from the shaped portions of the various drift tubes of the drift tube assembly 304. Except that the shapes of the quadrupoles 308A, 308B, and 308C are defined by elliptical surfaces, the drift tube assembly 304 can be arranged to operate similarly to the drift tube assembly 204.

[0036] Figure 4 The device shown is a drift tube assembly 404, which can be generally configured as follows: Figure 1 and Figure 2 The drift tube assemblies 104, 204, and 304 discussed are used to accelerate and shape ion beams. This embodiment differs from previous embodiments in that the drift tube assembly 404 defines a dual-gap configuration, shown as GAP1 and GAP2. The drift tube assembly 404 is formed of multiple drift tubes, including a first ground drift tube 412, a second ground drift tube 416, and a power drift tube 414, disposed between the first ground drift tube 412 and the second ground drift tube 416. This drift tube assembly 404 can be coupled as in a known LINAC dual-gap configuration to receive RF voltage from a single end of the resonator. Advantageously, a quadrupole arrangement 408 is integrated within the various drift tubes and defined by a first quadrupole 408A and a second quadrupole 408B, as in... Figure 2 In some embodiments, the beam is defined by a sinusoidal shape to provide better X and Y focusing of the ion beam.

[0037] Figure 5 Details of the geometry of a drift tube device integrally formed with a four-electrode arrangement according to an embodiment of the present disclosure are shown. Specifically, cross-sections through the ZX plane and through the ZY plane are shown. The drift tube device is shown as a drift tube assembly 500, comprising four electrodes as generally described above: a first ground drift tube 502, a first power drift tube 504, a second power drift tube 506, and a second ground drift tube 508. The electrodes (drift tubes) are modeled as cylindrical shells with a thickness of 2*a. Figure 5 In a non-limiting embodiment, this value is 20 mm. In each section, the cross-sectional view of the cylindrical shell shows two identical structures. Figure 5 Exemplary equations are also provided for defining the electrode surface in elliptical or sinusoidal embodiments. Specifically, in this non-limiting embodiment, to ensure a smooth transition, parameter "a" may represent the value of one half-axis of the ellipse and half the thickness (2a) of the cylindrical shell of the drift tube electrode. In embodiments with sinusoidal surfaces, parameter "a" alternatively represents the value of a quarter wavelength. In the case of elliptical surfaces, the value of "b" is independent of the radius "r" and can vary to produce small / medium / large protrusions defining the quadrupole structure. The physical limit of "b" is the gap length of a given gap in the drift tube assembly.

[0038] Figure 6A and Figure 6B The geometry of ion beam focusing according to embodiments of the present disclosure is depicted. Specifically, Figure 6A and Figure 6B These are diagrams of the ion beam envelope in the XZ and YZ planes, respectively, developed from simulation studies. In the simulation studies, P++ ions were tracked in an example of a drift tube configuration 600 with a quadrupole in a defocus-focus-defocus (DOFODO) setup (see [link to simulation study]). Figure 5This figure illustrates that, in the absence of space charge force, a circular beam can be focused in two lateral directions by carefully selecting the RF phase (figure without protrusions). With protrusions, it is clearly visible that the beam undergoes focusing, then defocusing, then focusing again (FODOFO) in the x-direction, while in the y-direction, the beam undergoes defocusing, then focusing, then defocusing again (DOFODO). At the ends of the triplet, a unified and balanced focusing effect is achieved towards the exit (see the lower curve at Z = 200 mm).

[0039] In other embodiments of this disclosure, the drift tube assembly may be arranged with four poles, wherein at least one gap may be adjustable. Since the strength of the four poles will depend on the length of the gap and the length and size of the protrusions forming the four poles, the ability to adjust the gap length allows for adjustment of the four pole strength without removing or reconfiguring components of the drift tube assembly.

[0040] Figure 7A Another exemplary device according to another embodiment of this disclosure is shown. In device 700, the previously discussed resonator 102 and RF power generator 120 are shown and will not be described further. In this device, the drift tube assembly 704 defines a triple-gap configuration, shown as g1, g2, and g3.

[0041] Device 700 includes a cross structure 730, and a support structure 722, arms 728, arms 726, and a support structure 724 all mechanically coupled to the cross structure 730. Support structure 722 includes a first arm 722A and a second arm 722B. The first arm 722A is mechanically coupled to a first ground drift tube 712, while the second arm 722B is mechanically coupled to a first component 714A of a first grounding drift tube coupler 714.

[0042] The support structure 724 includes a first arm 724A and a second arm 724B. The first arm 724A is mechanically coupled to the second component 716B of the second power drift tube 716, while the second arm 724B is mechanically coupled to the second ground drift tube 718.

[0043] Fixed arm 728 is connected to the second component 714B of the first power drift coupling 714. Fixed arm 726 is connected to the first component 716A of the second power drift coupling 716.

[0044] A quadrupole triplet 708 is formed, comprising quadrupoles 708A, 708B, and 708C respectively formed in gaps g1, g2, and g3. According to some embodiments of this disclosure, arms 728, 726, first arm 722A, second arm 722B, first arm 724A, and second arm 724B are movable independently relative to each other along the Z-axis, allowing g1, g2, and g3 to be independently changed. This dimensional adjustment of g1, g2, and g3 can be accomplished by any suitable tool for moving the aforementioned arms, such as external mechanical components, motors, or other components (not shown), without disrupting the vacuum in the harness or replacing the drift tube assembly.

[0045] By providing a device that allows for easy modification of the dimensions of gaps g1, g2, and g3, Figure 7A The embodiments described provide a novel method for controlling beam geometry. While the dimensions of the quadrupole bulge can be fixed, as defined by the hardware forming a given drift tube / quadrupole assembly (e.g., drift tube assembly 704), the inventors have discovered that the focused intensity provided by a given bulge can be adjusted by changing the dimensions of g1, g2, and g3. In other words, the dimensions of one or more gaps (along the Z direction) can be independently adjusted to adjust the focused intensity of the ion beam.

[0046] Figure 7B and Figure 7C The illustration shows an example of the effect of changing the size of an acceleration gap (e.g., changing g3). The simulation shows that by changing g3, the focusing intensity produced by the drift tube / quadrupole assembly changes, resulting in a change in beam size. Specifically, Figure 7B and Figure 7C These figures illustrate the beam envelopes of ion beams in the XZ and YZ planes, respectively, developed from simulation studies. A simple drift tube assembly 750 is schematically represented by four distinct squares, with the two rightmost squares defining gap g3. In the simulations shown, the relative dimensions of gap g3 are adjusted, while the other gap sizes remain constant. For the specific ion beam conditions shown, decreasing the size of g3 results in a decrease in beam width in the X plane (at 200 mm) and an increase in beam width in the Y plane. For other ion beam conditions, different mass-to-charge ratios may lead to different passage times and other higher-order effects, and subsequent beam focusing behavior may differ. Figure 6A and Figure 6B The results shown are different. It is worth noting that the above results illustrate the ability to change beam focusing by adjusting the size of only one gap, while in other embodiments, the ability to independently change the size of more than one gap would provide additional beam focusing control.

[0047] Figure 8A schematic diagram of an ion implanter according to an embodiment of the present disclosure is depicted. The ion implanter 800 includes acceleration stages 814-A and 814-B of a LINAC (shown as a linear accelerator 814). The ion implanter 800 may represent a beamline ion implanter, some components of which are not shown for clarity. The ion implanter 800 may include an ion source 802 and a gas chamber 807 known in the art. The ion source 802 may include an extraction system comprising extraction components and a filter (not shown) to generate an ion beam 806 at a first energy. Examples of suitable ion energies for the first ion energy are in the range from 5 keV to 100 keV, but the embodiments are not limited to this context. To form a high-energy ion beam, the ion implanter 800 includes various additional components for accelerating the ion beam 806.

[0048] As shown in the figure, the ion implanter 800 may include an analyzer 810, which analyzes the ion beam 806 by altering its trajectory, as is done in known devices. The ion implanter 800 may also include a clusterer 812 and a linear accelerator 814 (shown as a dashed line) disposed downstream of the clusterer 812, wherein the linear accelerator 814 is arranged to accelerate the ion beam 806 to form a high-energy ion beam 815 (greater than the ion energy of the ion beam 806 before entering the linear accelerator 814). The clusterer 812 may receive the ion beam 806 as a continuous ion beam and output the ion beam 806 as a clustered ion beam to the linear accelerator 814. As shown in the figure, the linear accelerator 814 may include multiple acceleration stages arranged in series (814-A, 814-B, ... to 814-Z (not shown)). In various embodiments, the ion energy of the high-energy ion beam 815 may represent, or approximate, the final ion energy of the ion beam 806. In various embodiments, the ion implanter 800 may include additional components such as a filter magnet 816, a scanner 818, and a collimator 820, wherein the general functions of the scanner 818 and collimator 820 are well known and will not be described in further detail herein. Thus, a high-energy ion beam, represented by a high-energy ion beam 815, can be supplied to a terminal station 822 to process the substrate 824. The non-limiting energy range of the high-energy ion beam 815 includes 500 keV-10 MeV, wherein the ion energy of the ion beam 806 is progressively increased through various acceleration stages of the linear accelerator 814. According to various embodiments of this disclosure, one or more acceleration stages of the linear accelerator 814 may include a drift tube assembly with an integrated quadrupole arrangement, as for... Figures 1-7C As detailed in the embodiments. The advantage provided by the ion implanter 800 is that the focusing of the ion beam 815 conducted through the linear accelerator 814 is improved due to the operation of the integrated quadrupole configuration.

[0049] Based on the above, this disclosure provides at least the following advantages. As a first advantage, integrating the quadrupole triplet into the drift tube assembly provides the ability to independently control ion beam focusing. A second advantage is that the variable-length drift tube assembly in this embodiment provides the flexibility to independently control the quadrupole intensity.

[0050] While certain embodiments of this disclosure have been described herein, the disclosure is not limited thereto, as its scope is as broad as that permitted in the art and can be similarly interpreted. Therefore, the above description should not be construed as limiting. Other modifications within the scope and spirit of the appended claims will be contemplated by those skilled in the art to which this invention pertains.

Claims

1. An ion implantation device, comprising: A drift tube assembly comprising a plurality of drift tubes defining a triple-gap configuration and arranged to accelerate and transport an ion beam along a beam path; A resonator is used to output radio frequency signals to the drift tube assembly; as well as A radio frequency quadrupole triplet is connected to the drift tube assembly and arranged around the beam path. The radio frequency quadrupole triplet includes: The first fourth pole is formed on the downstream portion of the first grounding drift tube and the upstream portion of the first power drift tube; The second quadrupole is formed on the downstream portion of the first power drift transistor and the upstream portion of the second power drift transistor; and The third and fourth electrodes are formed on the downstream portion of the second power drift diode and the upstream portion of the second ground drift diode. The downstream surface of the first ground drift tube is complementary to the upstream surface of the first power drift tube, the downstream surface of the first power drift tube is complementary to the upstream surface of the second power drift tube, and the downstream surface of the second power drift tube is complementary to the upstream surface of the second ground drift tube.

2. The ion implantation device according to claim 1, wherein the drift tube assembly comprises a plurality of drift tubes, wherein the radio frequency quadrupole triplet is integrally formed within the plurality of drift tubes.

3. The ion implantation device according to claim 1, wherein the first quadrupole, the second quadrupole, and the third quadrupole define an elliptical shape.

4. The ion implantation device according to claim 1, wherein the first quadrupole, the second quadrupole, and the third quadrupole define a sinusoidal shape.

5. The ion implantation device according to claim 1, wherein the drift tube assembly comprises: A first grounding drift transistor and a second grounding drift transistor, wherein the triple gap configuration includes: a first gap between the first grounding drift transistor and the first grounding drift transistor, a second gap between the first grounding drift transistor and the second grounding drift transistor, and a third gap between the second grounding drift transistor and the second grounding drift transistor, wherein the first length of the first grounding drift transistor is adjustable, and the second length of the second grounding drift transistor is adjustable.

6. The ion implantation device according to claim 5, wherein the first component of the first power drift tube couple and the first ground drift tube are movable in coordination with each other, wherein the second component of the second power drift tube couple and the second ground drift tube are movable in coordination with each other, wherein when the length of the first power drift tube or the length of the second power drift tube changes, the first gap, the second gap, and the third gap do not change.

7. An ion implantation device, comprising: An ion source is used to generate a continuous ion beam. A clusterer is disposed downstream of the ion source and arranged to convert the continuous ion beam into a clustered ion beam. as well as A linear accelerator, downstream of the cluster and comprising multiple acceleration stages, wherein a given stage of the multiple acceleration stages includes: A drift tube assembly comprising a plurality of drift tubes defining a triple-gap configuration and arranged to accelerate the bundled ion beam along a beam path; A resonator for outputting radio frequency signals to the drift transistor assembly; and A radio frequency quadrupole triplet is connected to the drift tube assembly and arranged around the beam path. The radio frequency quadrupole triplet includes: The first fourth pole is formed on the downstream portion of the first grounding drift tube and the upstream portion of the first power drift tube; The second quadrupole is formed on the downstream portion of the first power drift transistor and the upstream portion of the second power drift transistor; and The third and fourth electrodes are formed on the downstream portion of the second power drift diode and the upstream portion of the second ground drift diode. The downstream surface of the first ground drift tube is complementary to the upstream surface of the first power drift tube, the downstream surface of the first power drift tube is complementary to the upstream surface of the second power drift tube, and the downstream surface of the second power drift tube is complementary to the upstream surface of the second ground drift tube.

8. The ion implantation device according to claim 7, wherein the radio frequency quadrupole triplet is integrally formed within the plurality of drift tubes.

9. The ion implantation device according to claim 7, wherein the first quadrupole, the second quadrupole, and the third quadrupole define an elliptical shape.

10. The ion implantation device according to claim 7, wherein the first quadrupole, the second quadrupole, and the third quadrupole define a sinusoidal shape.

11. The ion implantation device according to claim 7, wherein the drift tube assembly comprises: A first grounding drift transistor and a second grounding drift transistor, wherein the triple gap configuration includes: a first gap between the first grounding drift transistor and the first grounding drift transistor, a second gap between the first grounding drift transistor and the second grounding drift transistor, and a third gap between the second grounding drift transistor and the second grounding drift transistor, wherein the first length of the first grounding drift transistor is adjustable, and the second length of the second grounding drift transistor is adjustable.

12. The ion implantation machine according to claim 11, wherein the first component of the first power drift tube couple and the first ground drift tube are movable in coordination with each other, wherein the second component of the second power drift tube couple and the second ground drift tube are movable in coordination with each other, wherein when the length of the first power drift tube or the length of the second power drift tube changes, the first gap, the second gap, and the third gap do not change.

13. An ion implantation device, comprising: A drift tube assembly comprising a plurality of drift tubes arranged to accelerate and transport an ion beam along a beam path; A resonator is used to output radio frequency signals to the drift tube assembly; as well as A quadrupole arrangement is arranged around the beam path, wherein the quadrupole arrangement is integrated into the surface of the plurality of drift tubes of the drift tube assembly, and wherein the quadrupole arrangement defines a sinusoidal or elliptical shape.

14. The ion implantation device of claim 13, wherein the drift tube assembly defines a triple gap configuration, and wherein the quadrupole arrangement defines a radio frequency quadrupole triple component.

15. The ion implantation device of claim 13, wherein the drift tube assembly defines a dual-gap configuration.

16. The ion implantation device of claim 14, wherein the drift tube assembly comprises: The system comprises a first ground drift tube, a second ground drift tube, a first power drift tube coupler, and a second power drift tube coupler, wherein the triple gap configuration includes: a first gap between the first ground drift tube and the first power drift tube coupler, a second gap between the first power drift tube coupler and the second power drift tube coupler, and a third gap between the second power drift tube coupler and the second ground drift tube, wherein the first length of the first power drift tube is adjustable, and the second length of the second power drift tube is adjustable.

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