AlN单晶基板
By designing a three-layer structure on an AlN single-crystal substrate, the internal defect density is higher than that on the surface and back, which solves the problem of easy cracking of AlN single-crystal substrate and improves yield and luminous efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NGK INSULATORS LTD
- Filing Date
- 2022-02-16
- Publication Date
- 2026-07-17
AI Technical Summary
Existing AlN single-crystal substrates are prone to cracking when manufacturing deep ultraviolet light-emitting elements, resulting in low yield and reduced luminous efficiency. This is mainly due to the asymmetrical distribution of defect density on the surface, inside and back side.
The AlN single crystal substrate with a three-layer structure has a higher internal defect density than the surface and back side. Specifically, the defect densities of the first, second, and third layers are more than 10 times higher. Crack generation is suppressed by controlling the distribution of defect density.
It effectively suppressed cracks in AlN single-crystal substrates, improving the yield and luminous efficiency of deep ultraviolet light-emitting elements.
Smart Images
Figure CN116888311B_ABST