Energy storage device temperature monitoring and alarming method and device
Patent Information
- Application Number
- CN202310869691.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-17
- Publication Date
- 2026-10-30
- Estimated Expiration
- 2043-07-17
AI Technical Summary
[0003]对于各类型固态物体温度测量,常见的测温装置有酒精温度计、水银温度计等,但这些设备的温度测量量程较小,无法满足储能设备高温、大范围的温度测量需求
[0061]本发明的一种储能设备温度监测报警方法,通过将本发明的一种储能设备温度监测报警设备点对点布置在储能单元上,每次传输指征温度的电压信号和既定位置信息两组数据,依据既定温度健康阈值标记温度状态,形成储能单元温度状态数据矩阵,相比于热成像的方法,以更少参数量和较小数据量实现储能单元温度状态监测与存储,运算量和数据存储空间更小,进而具有更高的实时性;
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Figure CN116893011B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to a method and device for temperature monitoring and alarm of energy storage equipment, belonging to the field of health management of energy storage equipment. Background Technology
[0002] The increasing demand for new energy sources is driving the continuous development of energy storage equipment. However, current energy storage devices struggle to overcome technical bottlenecks such as decreasing storage capacity, short average lifespan, and excessive temperature rise during charging and discharging. The excessive temperature rise during charging and discharging directly leads to energy storage devices operating at high temperatures for extended periods, reducing their health and ultimately causing other problems such as decreasing storage capacity and short lifespan. Therefore, to proactively intervene in the temperature of energy storage devices or perform maintenance and replacement when certain temperature limits are exceeded, real-time temperature monitoring of energy storage devices and the identification of unhealthy energy storage units are necessary.
[0003] For temperature measurement of various types of solid objects, common temperature measuring devices include alcohol thermometers and mercury thermometers. However, these devices have a limited temperature measurement range, which cannot meet the high-temperature, wide-range temperature measurement requirements of energy storage devices. Secondly, common temperature measuring devices are mostly handheld or clamped to a stand, which cannot achieve real-time data reading and transmission or measurement of a large number of high-density temperature points. Furthermore, temperature measuring devices often display temperature values in real time through large dial pointers or scales, which is not conducive to reading and recording non-steady-state temperature data, nor is it suitable for real-time temperature measurement in space-constrained situations.
[0004] During the charging and discharging process, energy storage devices experience rapid temperature rises and are difficult to stabilize at a specific value, requiring both time-domain tracking and measurement, which is challenging to read. Furthermore, the excessively high temperatures during charging and discharging make handheld measurement unsuitable and place high demands on the measuring instrument's range and high-temperature resistance. Moreover, the compact arrangement of energy storage devices makes heat conduction between units susceptible to affecting temperature health assessments, reducing overall management accuracy. Therefore, there is an urgent need for a temperature monitoring and alarm method for energy storage devices that enables real-time monitoring, unit location, and health diagnosis, as well as the equipment to implement this method. Summary of the Invention
[0005] The purpose of this invention is to propose a method for temperature monitoring and alarm of energy storage devices, and to provide a temperature monitoring and alarm device for implementing this method, enabling centralized, point-to-point temperature monitoring and alarm for high-density energy storage device clusters. This invention has the advantages of high accuracy, high real-time performance, and no need for an external power supply.
[0006] The objective of this invention is achieved through the following technical solution.
[0007] The present invention discloses a method for temperature monitoring and alarm of energy storage equipment, comprising the following steps:
[0008] Step S1: Deploy temperature monitoring and alarm devices based on the thermoelectric power generation principle on a one-to-one basis for each energy storage unit in the energy storage device group, record the device serial number and location data, and acquire voltage data signals during the use of the energy storage device group.
[0009] Step S2: Calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and analyze and iterate the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit, complete the temperature status marking of each energy storage unit, and obtain the temperature status data matrix of the energy storage unit.
[0010] Step S3: Based on accuracy and safety requirements, perform data processing on each energy storage unit with temperature status that needs attention, using spatial and temporal dimensions, to obtain the spatial and temporal temperature gradient data of the points of interest.
[0011] Step S4: Based on accuracy and safety requirements, the gradient data peaks and spatial focal points of the points of interest are determined. The energy storage unit points corresponding to the processing results are classified and marked as points of various health status types, obtaining sets of health status types. This enables centralized, point-to-point temperature monitoring of high-density energy storage device clusters. Based on the obtained sets of health status types, processing method set calculations are performed, and energy storage units within different processing method sets are graded for processing. This improves the efficiency of battery pack health management, reduces the overall battery pack replacement frequency, and extends the service life of energy storage devices. The processing includes alarm, retaining attention, and unregistering attention.
[0012] Step S1 specifically involves: deploying temperature monitoring and alarm devices on energy storage units at different locations within the high-density energy storage device group, marking each device with a serial number, and obtaining location data for each location as well as voltage signals related to the surface temperature of the energy storage unit.
[0013] Step S2 specifically includes:
[0014] Step S201: Calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and obtain basic data for signal analysis;
[0015] Step S202: Analyze and iterate the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit;
[0016] Step S203: Based on the allowable temperature health value of the energy storage unit and considering the economic requirements in the general embodiment, complete the temperature status marking of each energy storage unit.
[0017] Step S204: Complete the signal analysis and temperature status marking of all energy storage units at all locations, and form an energy storage unit temperature status data matrix based on location information.
[0018] The specific method of step S202 is as follows: Based on the principle of thermoelectric power generation, the voltage signals measured on each energy storage unit are converted into surface temperature data of the energy storage unit with high precision by measuring the reference ambient temperature, and the signal analysis accuracy is improved through multiple iterative calculations. The specific calculation formula is as follows:
[0019]
[0020] Among them, T ch Here, U0 is the temperature of the outer heat-conducting sheet, i.e., the surface temperature of the energy storage unit; R0 is the total load resistance, including the indicator light; n is the number of pairs of P-type and N-type semiconductors in the temperature measurement area (a constant); l is the length of each pair of P-type and N-type semiconductors; β is the semiconductor length conversion factor; c is the processing fillet radius; σ is the semiconductor conductivity; a is the semiconductor thickness; b is the semiconductor width; ε is the semiconductor cross-sectional area calibration factor; and α is the semiconductor cross-sectional area calibration factor. p α is the Seebeck coefficient of the P-type semiconductor in the temperature measurement zone of the equipment (related to the surface temperature of the energy storage unit and the ambient temperature). n T represents the Seebeck coefficient of the N-type semiconductor in the temperature measurement zone of the equipment (related to the surface temperature of the energy storage unit and the ambient temperature). en T0 represents the temperature of the outer heat-conducting plate, i.e., the reference ambient temperature, and T0 is the system calibration factor.
[0021] The specific steps of step S203 are as follows: The parsed temperature data is compared with the monitored healthy temperature range of the energy storage unit. For economic and safety considerations, the temperature status is marked. Specifically, the method is as follows:
[0022] If the temperature is much lower than the healthy temperature threshold, then mark the device location as healthy.
[0023] If the temperature is close to a certain range of the healthy temperature threshold, the device will be marked as a device of interest.
[0024] If the temperature is within the critical range of the known health threshold for energy storage devices, then the device is marked as a key monitoring device.
[0025] If the temperature exceeds the health threshold but is below the economic safety threshold, the device will be marked as a key monitoring status.
[0026] If the temperature exceeds the economically safe threshold, the device will be marked as alarming.
[0027] Step S3 specifically includes:
[0028] Step S301: Set the monitoring time window width according to the required accuracy of temperature monitoring, and set the observation time window width according to the equipment safety requirements;
[0029] Step S302: Perform spatial dimension-based data processing on each energy storage unit with temperature status that needs to be monitored to obtain the spatial temperature gradient data of the points of concern.
[0030] Step S303: Perform time-based data processing on each energy storage unit with the temperature state that needs to be monitored to obtain the temperature time gradient data of the points of interest.
[0031] The specific steps of step S302 are as follows: For a specific moment, all energy storage units marked as being in a state of interest or above are used as spatial boundaries to form a temperature monitoring interest area for energy storage units. The spatial temperature gradient, direction, and magnitude of the spatial temperature gradient are calculated for all points within this area at that moment.
[0032] The specific steps of step S303 are as follows: The temperature time gradient at a specific moment is defined as the optimal slope solution that minimizes the weighted loss function of the local linear regression model of temperature within the monitoring time window. Simultaneously, considering data accuracy, a forgetting factor is introduced. Temperature time gradients are calculated for all energy storage units marked as being in a state of high interest or above. The specific formula is as follows:
[0033]
[0034] Among them, grad t Let be the temperature time gradient, t∈[t0-t] mon [+Δt,t0] represents the monitoring time window, t mon The monitoring time window width is given by Δt, where Δt is the time interval between adjacent samplings, and T is the time window width. ch The temperature data of the energy storage unit obtained by analysis, where ρ is the forgetting factor constant (ρ∈(0,1)).
[0035] Step S4 specifically includes:
[0036] Step S401: Based on the accuracy and safety requirements, obtain the maximum temperature time gradient of the points involved in step S3, the line corresponding to the maximum temperature spatial gradient, and the space enclosed by the normal plane of the temperature spatial gradient direction.
[0037] Step S402: Classify and label the energy storage unit locations corresponding to the processing results as locations of various health status types and obtain a set of health status types;
[0038] Step S403: Within the observation time window, perform processing method set calculations based on the obtained health status sets of various types, and perform graded alarms and graded tracking on the energy storage units within different processing method sets to improve the efficiency of battery pack health management, reduce the overall battery pack replacement frequency, and increase the service life of energy storage equipment.
[0039] The specific steps of step S402 are as follows: Set a temperature time gradient safety threshold based on the temperature rise rate performance of the energy storage device group, and complete the classification and marking of energy storage unit locations.
[0040] If the temperature time gradient is greater than the temperature time gradient safety threshold, then point i will be marked as a key monitoring location point of type A1 and included in the A1 health status set, while the temperature status mark value will be locked.
[0041] If the temperature time gradient is the maximum value of the sampling in this round, then mark point i as a key monitoring location point of type A1, include it in the health status set of A2, and lock the temperature status mark value at the same time.
[0042] If the energy storage unit is located on the line corresponding to the maximum value of the temperature spatial gradient, then the i-th point is marked as a key monitoring point of type B1 and included in the B1 health status set, while the temperature status mark value is locked.
[0043] If the energy storage unit is located within the space enclosed by the temperature gradient direction plane, then point i will be marked as a key monitoring point of category B2 and included in the B2 health status set, while the temperature status mark value will be locked.
[0044] The specific steps of step S403 are as follows: Graded tracking and observation and processing of each health level type point within the observation time window:
[0045] If the point belongs to only a single set and has only been marked once, then remove the key monitoring mark of this type from the location point, and unlock the temperature status mark value and reduce the temperature status by one level;
[0046] If the point belongs to only a single set but has been marked more than once, then retain the key monitoring mark of this type for the location point, cancel the temperature status mark value, and issue an alarm as a level 5 alarm point;
[0047] If the point belongs to both A1 and B1, an alarm will be triggered as a level 4 alarm point.
[0048] If the point belongs to both A1 and B2, an alarm will be triggered as a level 3 alarm point.
[0049] If the point belongs to both A2 and B1, the temperature status will be increased by one level and locked, and an alarm will be triggered as a level two alarm point.
[0050] If the point belongs to both A2 and B2 categories, the temperature status will be increased by one level and locked, and an alarm will be triggered as a level one alarm point.
[0051] To achieve the above method, a second aspect of the present invention also discloses a temperature monitoring and alarm device for energy storage equipment, including a temperature measuring zone and an alarm zone.
[0052] The temperature measuring area includes an inner heat-conducting sheet, an inner electrode sheet, a P-type semiconductor, an N-type semiconductor, an outer electrode sheet, and an outer heat-conducting sheet; the alarm area includes a device box, a device cover, an insulating heat-insulating pad, indicator lights, and wires and signal lines.
[0053] The inner heat-conducting sheet is in close contact with the outer surface of the energy storage device or the surface to be measured, while the outer heat-conducting sheet is exposed to the external environment of the energy storage device. When the energy storage device is working, the surface temperature rises, creating a temperature difference with the external ambient temperature. The inner heat-conducting sheet conducts the surface temperature of the energy storage device to the inner electrode sheet and the inner surfaces of the P-type and N-type semiconductors. The outer heat-conducting sheet conducts the surface temperature of the energy storage device to the outer electrode sheet and the outer surfaces of the P-type and N-type semiconductors. Due to the Seebeck effect, a current is generated inside the P-type and N-type semiconductors under the temperature difference at both ends. This current passes through the inner and outer electrode sheets, generating a voltage on both sides of the electrodes in the temperature measurement area. The device box houses the temperature measurement area components and is attached to the surface of the energy storage device during use. The device cover fixes the temperature measurement area components and indicator lights. An insulating heat-resistant pad is placed around the outside of the temperature measurement area. Internal wires are arranged inside the device box, generating voltage through the temperature measurement area components to power the indicator lights. Signal lines are arranged inside the device box, outputting voltage signals and corresponding device position information to the outside.
[0054] The voltage across the circuit path formed by the temperature measuring zone is proportional to the temperature difference. It can transmit simple voltage signals to indicate temperature signals that are difficult to transmit, and can also amplify the voltage signal by increasing the logarithm of the P-type and N-type semiconductors or the area of the temperature measuring zone.
[0055] When the temperatures at both ends of the device are different, the circuit path of the temperature measuring zone automatically generates a voltage proportional to the temperature difference. The power is supplied to the indicator light with color temperature adjustment function in the alarm zone. The color temperature of the indicator light increases with the increase of voltage. At the same time, a voltage signal line can be connected to the signal port of the alarm zone to output a voltage signal.
[0056] The energy storage device temperature monitoring and alarm device does not directly measure, read and transmit temperature data. Instead, it uses a voltage signal that is easier to transmit to indicate temperature data that is difficult to transmit. It is small in size and has a large range, which facilitates the arrangement of measuring points and simultaneous measurement of temperature at multiple points.
[0057] The energy storage device temperature monitoring and alarm device does not require an external power supply. It monitors the surface temperature changes of the energy storage device in real time and transmits voltage signals to the energy storage device temperature monitoring and alarm system of the present invention through signal lines. Its indicator light changes color in real time to indicate the temperature health status of the energy storage device, which is convenient for equipment management personnel to carry out maintenance.
[0058] The energy storage device temperature monitoring and alarm device can be attached to the surface of different energy storage devices to achieve centralized temperature health management of different energy storage devices. It can also be attached to the surface of different energy storage units of the same energy storage device to achieve temperature health management at various locations of the same energy storage device.
[0059] The energy storage device temperature monitoring and alarm method and equipment can be applied to centralized temperature health management in large energy storage parks, over-temperature alarms in medium-sized energy storage systems, and temperature health monitoring, location, and alarm of individual energy storage units inside small energy storage devices in vehicles or buildings.
[0060] Beneficial effects:
[0061] The present invention provides a temperature monitoring and alarm method for energy storage devices. By deploying the temperature monitoring and alarm device for energy storage devices point-to-point on the energy storage unit, the device transmits two sets of data each time: a voltage signal indicating the temperature and predetermined location information. The temperature status is marked according to a predetermined temperature health threshold, forming a temperature status data matrix of the energy storage unit. Compared with thermal imaging methods, this method achieves temperature status monitoring and storage of the energy storage unit with fewer parameters and less data. It also requires less computation and data storage space, and thus has higher real-time performance.
[0062] This invention provides a temperature monitoring and alarm method for energy storage devices. By solving the spatial and temporal temperature gradients of energy storage units, the method monitors the rate and direction of temperature change in energy storage units and comprehensively monitors the impact of heat conduction between energy storage units. Compared with methods that only focus on the temperature data limit monitoring and alarm of a single energy storage unit, this method enables hierarchical management and positioning of each energy storage unit, meets the hierarchical monitoring and alarm requirements of high-density energy storage devices, and provides high accuracy in the location of monitoring and alarm results.
[0063] The present invention provides a temperature monitoring and alarm method for energy storage equipment. By setting the monitoring duration, observation duration, and temperature time gradient forgetting factor, the method adjusts the temperature time gradient solution parameters and the observation time of key energy storage unit locations. This adapts to the temperature health monitoring needs of energy storage equipment under different accuracy and safety requirements, reduces the impact of abnormal data values on alarm point classification, and ensures high accuracy of the monitoring and alarm results.
[0064] This invention discloses a temperature monitoring and alarm device for energy storage equipment. It employs the principle of thermoelectric power generation, utilizing the temperature difference between the energy storage device and the ambient temperature to generate voltage. On one hand, it can transmit voltage signals. Compared to traditional digital display temperature sensors for energy storage equipment, this device is smaller, has simpler signal transmission, smaller data volume, and is easier to read in real time, making real-time data monitoring more convenient. On the other hand, it requires no external power supply and can achieve self-powered operation. Indicator lights on the device surface can indicate the temperature health status of the energy storage equipment in real time. Compared to energy storage equipment temperature sensors powered by power cords or batteries, this device reduces the difficulty of deployment, decreases maintenance frequency, improves the efficiency of energy storage unit health management, reduces the replacement frequency of energy storage units, and extends the overall lifespan of the energy storage equipment. Attached Figure Description
[0065] Figure 1 This invention relates to a temperature monitoring and alarm method for energy storage devices.
[0066] Figure 2 This is a schematic diagram of the energy storage unit temperature state data matrix parsing method described in this invention;
[0067] Figure 3 This is a schematic diagram of the voltage signal analysis method described in this invention;
[0068] Figure 4 This is a schematic diagram of the gradient data processing method described in this invention;
[0069] Figure 5 This is a schematic diagram of the data analysis and hierarchical alarm method described in this invention;
[0070] Figure 6 This is a schematic diagram of the main structure of the device described in this invention;
[0071] Figure 7 This is an external schematic diagram of the device described in this invention from an external perspective.
[0072] Figure 8 This is a schematic diagram of the device from an external perspective.
[0073] Figure 9 This is an external schematic diagram of the device described in this invention from an internal perspective;
[0074] Figure 10 This is a schematic diagram of the device from the inside of the device described in this invention.
[0075] Figure 11 This is a schematic diagram of the temperature measuring area and the outer heat-conducting sheet of the device described in this invention;
[0076] Among them, 1—equipment box, 2—equipment cover, 3—insulating heat insulation pad; 4—inner heat-conducting sheet; 5—P-type semiconductor; 6—N-type semiconductor; 7—outer electrode sheet; 8—outer heat-conducting sheet; 9—inner electrode sheet; 10—indicator light; 11—voltage output port; 12—signal output port; 13—equipment box adhesive surface; 14—indicator light hole; 15—pad limiting block; 16—terminal electrode sheet; 17—terminal; 18—terminal limiting screen. Detailed Implementation
[0077] To better understand the above-mentioned objectives, features, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be combined with each other. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0078] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and therefore the scope of protection of the invention is not limited to the specific embodiments disclosed below.
[0079] This embodiment discloses a temperature monitoring and alarm device for energy storage equipment, such as... Figures 6-11 As shown, the device includes a temperature measurement zone and an alarm zone. The temperature measurement zone has an inner heat-conducting sheet 4, an inner electrode sheet 9, a P-type semiconductor 5, an N-type semiconductor 6, an outer electrode sheet 7, and an outer heat-conducting sheet 8. The alarm zone includes a device box 1, a device cover 2, an insulating heat-resistant pad 3, an indicator light 10, terminal electrode sheets 16, terminal blocks 17, a wiring limit panel, and wires and signal lines. Other auxiliary structures of the device include a voltage output port 11 of the insulating heat-resistant pad 3, a signal output port 12 of the device box 1, a pad limit block 15 of the device cover 2, an adhesive surface 13 of the device box, and an indicator light hole 14.
[0080] Specifically, the adhesive surface 13 of the device box contacts and fixes the surface of the energy storage unit under test, so that the inner heat-conducting sheet 4 is tightly attached to the outer surface of the energy storage device or the surface to be measured, while the outer heat-conducting sheet 8 is exposed to the external environment of the energy storage device. When the energy storage device is working, the surface temperature rises, creating a temperature difference with the external ambient temperature. The inner heat-conducting sheet 4 conducts the surface temperature of the energy storage device to the inner electrode sheet 9 and the inner surfaces of the P-type semiconductor 5 and N-type semiconductor 6. The outer heat-conducting sheet 8 conducts the surface temperature of the energy storage device to the outer electrode sheet 7 and the outer surfaces of the P-type semiconductor 5 and N-type semiconductor 6. Due to the Seebeck effect, a current is generated inside the P-type semiconductor 5 and N-type semiconductor 6 under the temperature difference at both ends. This current passes through the inner electrode sheet 9 and the outer electrode sheet 7, and is used for temperature measurement. Voltage is generated on both sides of the temperature measuring zone; the equipment box 1 houses the temperature measuring zone components and is attached to the surface of the energy storage device during use; the equipment cover 2 fixes the components of the temperature measuring zone and fixes the indicator light 10 through the indicator light hole 14; the insulating heat insulation pad 3 is lined around the outside of the temperature measuring zone and fixed by the pad limit block 15; the internal wires are arranged inside the equipment box 1 and supply power to the indicator light 10 through the voltage generated by the temperature measuring zone components; the wiring terminal 17 is connected to the wiring terminal electrode 16, and the wiring limit screen 18 effectively protects the wiring terminal 17 and the signal line connected to it from the semiconductor; the signal line is arranged inside the equipment box 1, connects to the wiring terminal 17 and sequentially passes through the voltage output port 11 and the signal output port 12 to output voltage signals and corresponding device position information.
[0081] The inner and outer heat-conducting sheets are made of ceramic materials with good thermal conductivity and electrical insulation, which can achieve heat conduction with low loss and low delay, and avoid the connection between the electrode sheets distributed and adhered thereon through the structure of non-P-type semiconductor or N-type semiconductor, with a thickness of not less than 1mm.
[0082] The temperature measuring area is formed by alternating P-type and N-type semiconductors, which are laid out in a semiconductor matrix. Semiconductors of the same type are not adjacent to each other, and the height of the semiconductors is 0.6 to 2 times that of the heat-conducting sheet.
[0083] Preferably, according to the temperature measurement range requirements of the energy storage device and the actual available space size limitations of the present invention, the inner heat-conducting sheet 4 and the outer heat-conducting sheet 8 of the temperature monitoring and alarm device of the energy storage device are designed to have a thickness of 4mm and a heat-conducting surface size of 30mm×30mm. The P-type semiconductor 5 and the N-type semiconductor 6 are both 3mm high and are evenly distributed in a 10×10 pattern. The overall external size of a single energy storage device temperature monitoring and alarm device is 12mm×50mm×50mm.
[0084] Preferably, according to an embodiment of the present invention, the temperature monitoring and alarm device of the energy storage device and the energy storage unit are surface-connected and fixed by adhesive bonding. A high-temperature resistant adhesive is used to bond the device box 1 adhesive surface 13 to the surface of the energy storage device. In order to ensure that the heat-conducting surface of the inner heat-conducting sheet 4 is still in close contact with the surface to be measured after bonding, the thickness of the device box 1 is based on the assembly surface with the device 2, with an upper deviation of -0.10mm and a lower deviation of -0.50mm on the basis of the nominal size of 8mm.
[0085] To aid in signal amplification, the semiconductors and electrode plates are connected in series. Each inner and outer electrode plate in the temperature measuring zone is connected to only one P-type semiconductor and one N-type semiconductor. Each electrode plate completely covers the end faces of the connected P-type and N-type semiconductors. The contact surfaces are bonded with a small amount of thermally conductive and high-temperature resistant adhesive. The electrode plates do not cross or contact each other. They form a unique and complete circuit path only by connecting the P-type and N-type semiconductors in series. This path connects all P-type and N-type semiconductors in the temperature measuring zone. The positive and negative terminals of the power supply for this path are located at the terminals.
[0086] Specifically, when the device is working, the voltage across the circuit path formed by the temperature measuring area is proportional to the temperature difference. The temperature signal, which is difficult to transmit, can be indicated one-to-one by transmitting a simple voltage signal. At the same time, the voltage signal can be amplified by increasing the logarithm of the P-type semiconductor and the N-type semiconductor or the area of the temperature measuring area.
[0087] Furthermore, when the temperatures at both ends of the device are different, the circuit path of the temperature measuring zone automatically generates a voltage proportional to the temperature difference. The electrical energy is supplied to the indicator light with color temperature adjustment function in the alarm zone. The color temperature of the indicator light increases with the increase of voltage, realizing the visual display of abnormal conditions in the on-site monitoring of the energy storage device. At the same time, a voltage signal line can be connected to the signal port of the alarm zone to output a voltage signal to the outside.
[0088] According to embodiments of the present invention, such as Figure 1 As shown, the deployment, data acquisition, data processing, and alarm operation of the temperature monitoring and alarm equipment for the energy storage device are completed, specifically as follows:
[0089] S1, deploy temperature monitoring and alarm devices based on the thermoelectric power generation principle on a one-to-one basis for each energy storage unit of the energy storage equipment group, record the device serial number and location data, and acquire voltage data signals during the use of the energy storage equipment group;
[0090] S2, calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and analyze and iterate the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit, complete the temperature status marking of each energy storage unit, and obtain the temperature status data matrix of the energy storage unit.
[0091] S3, based on accuracy and safety requirements, performs spatial and temporal data processing on the energy storage units at the temperature states that need attention, to obtain the spatial and temporal temperature gradient data of the points of interest.
[0092] S4, based on accuracy and safety requirements, calculates the gradient data peaks and spatial focal points of the points of interest. The processed energy storage unit points are then categorized and labeled into different health status types, obtaining sets of health status for each type. This enables centralized, point-to-point temperature monitoring of high-density energy storage device clusters. Based on the obtained health status sets, a set of processing methods is calculated, and energy storage units within different processing method sets are processed to improve battery pack health management efficiency, reduce overall battery pack replacement frequency, and extend the lifespan of energy storage devices. The processing includes alarm activation, retention of interest, and removal of interest.
[0093] According to an embodiment of the present invention, step S1 specifically involves: arranging the devices described in the embodiment at 1m intervals at the center of the surface of energy storage units at different locations within a high-density energy storage device group with external dimensions of 2m×2m×3m, forming 4 rows of 9 groups each, totaling 36 units. Each unit is then labeled with a serial number i (i = 1, 2, ..., 36), and the location data (x) of each location is obtained. i y i , z i And the voltage signal U related to the surface temperature of the energy storage unit. 0,i .
[0094] According to embodiments of the present invention, such as Figure 2 As shown, the temperature monitoring equipment is calibrated, the reference ambient temperature data is monitored, and the voltage data signal transmitted by the temperature monitoring device is analyzed and iterated to obtain high-precision surface temperature data of the energy storage unit. The temperature status of each energy storage unit is then marked, resulting in an energy storage unit temperature status data matrix, specifically:
[0095] S201, calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and obtain basic data for signal analysis;
[0096] S202, analyzes and iterates the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit;
[0097] S203, based on the permissible temperature health value of the energy storage unit and considering the economic requirements of the general embodiment, complete the temperature status marking of each energy storage unit.
[0098] S204 completes the signal analysis and temperature status marking of all energy storage units at all locations, forming a data matrix of energy storage unit temperature status based on location information.
[0099] According to an embodiment of the present invention, step S201 specifically involves: before the system is used for the first time, calibrating it with the measurement results of a high-precision thermometer to obtain the system calibration factor T0(K), and using a non-contact temperature detection device for the energy storage device group to measure the reference ambient temperature T. en (K).
[0100] According to an embodiment of the present invention, step S202 specifically involves: converting the voltage signals measured on each energy storage unit into surface temperature data of the energy storage unit with high precision, and improving the signal analysis accuracy through multiple iterative calculations. The specific calculation formula is as follows:
[0101]
[0102] Among them, T ch Here, U0 is the temperature of the outer heat-conducting sheet, i.e., the surface temperature of the energy storage unit (K); R0 is the voltage signal (V); R0 is the total load resistance including the indicator light (Ω); n is the logarithm of the P-type and N-type semiconductors in the temperature measurement area (constant); l is the length of each pair of P-type and N-type semiconductors (m); β is the semiconductor length conversion factor (1 / m); c is the processing fillet radius (m); σ is the semiconductor conductivity (S / m); a is the semiconductor thickness (m); b is the semiconductor width (m); ε is the semiconductor cross-sectional area calibration factor (m2); and α is the semiconductor cross-sectional area calibration factor. p α is the Seebeck coefficient (V / K) of the P-type semiconductor in the temperature measurement zone of the equipment, which is related to the surface temperature of the energy storage unit and the ambient temperature. n T represents the Seebeck coefficient (V / K) of the N-type semiconductor in the temperature measurement zone of the equipment, which is related to the surface temperature of the energy storage unit and the ambient temperature. en T0 is the temperature of the outer heat-conducting plate, i.e., the reference ambient temperature (K), and T0 is the system calibration factor (K).
[0103] Furthermore, according to an embodiment of the present invention, the method for improving data parsing accuracy through multiple iterative calculations is as follows: based on the correlation characteristics between the semiconductor Seebeck coefficient and the surface temperature of the energy storage unit and the ambient temperature, the formula needs to be solved according to... Figure 3 The method described involves inputting fixed parameters such as the semiconductor logarithm, length, thickness, width, length conversion factor, cross-sectional area calibration factor, and total load resistance. Before initial system use, the system calibration factor T0 is obtained by calibration with measurements from a high-precision thermometer. For a specific time t, the real-time reference ambient temperature T is measured by an ambient temperature sensor. en (t), setting the initial surface temperature of the energy storage unit to T. ch (t,0)=T en (t), the corresponding semiconductor Seebeck coefficient value is obtained based on the surface temperature of the energy storage unit and the reference ambient temperature, and substituted into formula (1) for solution. If the calculation result T ch (t,n+1)-T ch(t,n)≥ε agree (n is the number of iterations, n = 0, 1, 2, ...; ε) agree If the error value is acceptable, then the corresponding semiconductor Seebeck coefficient value is obtained by comparing the newly obtained surface temperature of the energy storage unit with the reference ambient temperature value, and substituted into formula (1) for solution. This cycle is repeated. If the calculation result T ch (t,n+1)-T ch (t,n)<ε agree Then the real-time feedback voltage signal U0 is analyzed to obtain the surface temperature data of the energy storage unit.
[0104] According to an embodiment of the present invention, step S203 specifically involves: comparing the parsed temperature data with the monitored allowable temperature health value T of the energy storage unit. lim Comparison, for economic reasons, with a safety factor s = 1 to 1.08, complete the temperature status marking:
[0105] If T ch,i ≤70%T lim Then mark the device location as healthy and set the temperature status mark value m = 1;
[0106] If 70%T lim <T ch,i ≤90%T lim Then mark the device as a state of interest, and set the temperature status mark value m = 2;
[0107] If 90%T lim <T ch,i ≤100%T lim Then mark the device as a key concern and set the temperature status mark value m = 3;
[0108] If 100%T lim <T ch,i ≤s*100%T lim Then mark the device as a key monitoring device and set the temperature status mark value m = 4;
[0109] If T ch,i >s*100%T lim Then mark the device as an alarm state and set the temperature status mark value m = 5.
[0110] According to an embodiment of the present invention, step S204 specifically involves: completing the voltage signal U for all energy storage unit points with serial number i. 0,i Analysis of (t) and temperature status labeling were used to obtain real-time surface temperature data T at all different locations. ch,i (t) and the energy storage unit temperature status marker m i Combined with the location data of each energy storage unit (xi y i , z i This forms a temperature status data matrix A for energy storage units based on location information. i =[T ch,,i (t),t,m i ,x i ,y i ,z i This is used to accurately monitor the temperature health of various parts of the energy storage device.
[0111] According to embodiments of the present invention, such as Figure 4 As shown, based on accuracy and safety requirements, data processing is performed on each energy storage unit with a specific temperature state, considering both spatial and temporal dimensions, to obtain the spatial and temporal temperature gradients at the points of interest. Specifically, this includes:
[0112] Step S301: Based on the required accuracy of temperature monitoring, set the monitoring time window width to t. mon Based on equipment safety requirements, the observation time window width is set to t. obs ;
[0113] Step S302: Perform spatial dimension-based data processing on each energy storage unit with temperature status that needs to be monitored to obtain the spatial temperature gradient data of the points of concern.
[0114] Step S303: Perform time-based data processing on each energy storage unit with the temperature state that needs to be monitored to obtain the temperature time gradient data of the points of interest.
[0115] Specifically, according to the embodiments of the present invention and the signal processing principle, in step S301, to ensure that the temperature data obtained after sampling and analysis is not distorted after processing, the monitoring time window width t is set when the sampling frequency is 1 / Δt. mon >2.56Δt, set the observation time window width t obs >2.56Δt.
[0116] According to an embodiment of the present invention, step S302 specifically involves: for any time t, labeling all temperature states as m. i ≥2 energy storage units are used as spatial boundaries to form the temperature monitoring focus area for energy storage units. The spatial temperature gradient of all points within this area is calculated at the given time. The direction of the spatial temperature gradient of point i is:
[0117]
[0118] The magnitude of the temperature spatial gradient at point i is:
[0119]
[0120] According to an embodiment of the present invention, step S303 specifically involves: defining the time gradient at time t = t0 as the gradient at time t ∈ [t0 - t0]. mon The optimal slope solution for minimizing the weighted loss function of the local linear regression model within the monitoring time window [+Δt,t0] is obtained.
[0121] Furthermore, according to an embodiment of the present invention, considering that the longer the time interval, the smaller the actual impact on the temperature time gradient at the calculation time, a forgetting factor constant ρ∈(0,1) is introduced to improve data accuracy. Then, all temperature states are labeled as m. i For energy storage units with a capacity of ≥3, the temperature time gradient is calculated using the following formula:
[0122]
[0123] Among them, grad t Let be the temperature time gradient (K / s), t∈[t0-t] mon [+Δt,t0] represents the monitoring time window, t mon The monitoring time window width (s) is given by T, where Δt is the time interval between adjacent samplings (s). ch The temperature data (K) of the energy storage unit obtained by analysis is given, where ρ is the forgetting factor constant (ρ∈(0,1)).
[0124] Preferably, according to the embodiments of the present invention, the energy storage unit itself has a slow heat dissipation rate, and the energy storage units in the energy storage device group are arranged in a multi-layer, multi-row, and cubic form, which has a good heat conduction effect. The forgetting factor constant is taken as ρ = 0.95.
[0125] According to embodiments of the present invention, such as Figure 5 As shown, based on accuracy and safety requirements, the gradient data peaks and spatial focal points of the points of interest are obtained. The energy storage unit points corresponding to the processing results are classified and marked into points of various health levels, and sets of health levels for each type are obtained. The processing method set operation is completed, and alarms, retention of interest, and removal of interest are processed for energy storage units within different processing method sets. Specifically, this includes:
[0126] S401, Based on accuracy and safety requirements, calculate the maximum temperature-time gradient grad of the points involved in step S3. t,max The straight line corresponding to the maximum temperature spatial gradient The space M enclosed by the temperature spatial gradient direction normal plane;
[0127] S402, classify and label the energy storage unit locations corresponding to the processing results as locations of various health status types and obtain the set of each type of health status;
[0128] S403 completes the processing mode set calculation within the observation time window, and performs alarm, retain attention, and un-attention processing on the energy storage units within different processing mode sets.
[0129] According to an embodiment of the present invention, step S402 specifically involves: setting a temperature time gradient safety threshold G based on the temperature rise rate performance of the energy storage device group. t,lim Complete the classification and labeling of energy storage unit locations:
[0130] If grad t-mag,i (t)>G t,lim Then, mark point i as a key monitoring location of type A1 and include it in the A1 health status set, while setting the temperature status label value m. i (t+1)=m i (t) and lock;
[0131] If grad t-mag,i (t)=grad t,max Then, mark point i as a key monitoring location of type A1 and include it in the A2 health status set, while setting the temperature status label value m. i (t+1)=m i (t) and lock;
[0132] If point (x i y i , z i (Falling on a straight line) The above will mark point i as a key monitoring location of category B1 and include it in the B1 health status set, while setting the temperature status label value m. i (t+1)=m i (t) and lock;
[0133] If point (x i y i , z i If the point falls within spatial region M, then point i will be marked as a key monitoring location of category B2 and included in the B2 health status set. Simultaneously, the temperature status label value m will be set. i (t+1)=m i (t) and lock;
[0134] According to an embodiment of the present invention, step S403 specifically involves: for t∈(t0-t) obs [t0] Track, observe, classify, and process the various health status types of locations within the observation time window:
[0135] If a point belongs to only a single set but is marked more than once, then the point is assigned to the C5 health level set.
[0136] Simultaneously, let C4 = A1∩B1, let C3 = A1∩B2, let C2 = A2∩B1, and let C1 = A2∩B2; furthermore, set the temperature status of each energy storage unit point:
[0137] For a point that belongs to a single set and has been marked only once, let its temperature state label value be m. i (t+1)=m i (t)-1 and unlock;
[0138] Cancel the locking of the temperature status marker values of each energy storage unit within the C5 health status set;
[0139] Maintain the current temperature status marker values of each energy storage unit within the health status sets of C3 and C4;
[0140] Let the temperature status marker value of each energy storage unit point within the health status sets of C1 and C2 be m. i (t+1)=m i (t)+1 and lock.
[0141] Furthermore, graded alerts are issued for energy storage unit locations within each health level set;
[0142] For energy storage unit locations within the C5 health status set, alarms will be triggered according to the five-level alarm points.
[0143] For energy storage unit locations within the C4 health status set, alarms will be triggered according to the four-level alarm points.
[0144] For energy storage unit locations within the C3 health status set, alarms will be triggered as three-level alarm points.
[0145] For energy storage unit locations within the C2 health status set, alarms will be triggered as level two alarm points.
[0146] For energy storage unit locations within the C1 health status set, an alarm will be triggered as a Level 1 alarm point.
[0147] Based on the need for continuous monitoring, after completing one monitoring cycle, this embodiment of the invention enters the next monitoring cycle, repeating steps S202 to S403 in sequence to continuously monitor the temperature health of the energy storage unit in the energy storage device in real time, analyze the data, accurately locate and issue graded alarms.
[0148] The real-time monitoring results of this invention are stable and highly accurate. In 3000 monitoring alarm cycles, the error between the real-time monitoring data and the test results of a laboratory infrared thermal imager with a temperature measurement accuracy of ±0.5K, temperature drift of less than 0.1K, and detection distance of no more than 12μm is no greater than 2%; and the error between the data and the test results of a single laboratory digital display infrared temperature sensor with a measurement accuracy of ±0.1K and temperature drift of less than 0.05K is no greater than 1%.
[0149] In this embodiment of the invention, the graded alarm action can be specific to a certain energy storage unit in an energy storage device group. In 3000 monitoring alarm cycles, a level 3 alarm is triggered for the energy storage units at positions (2,2,2), (2,2,3), (4,2,2), and (4,2,3), and a level 2 alarm is triggered for the energy storage unit at position (3,2,2). The alarm is deactivated within 10 to 50 cycles after targeted cooling measures are implemented.
Claims
1. A method for temperature monitoring and alarm of an energy storage device, characterized in that, Includes the following steps, Step S1: Deploy temperature monitoring and alarm devices based on the thermoelectric power generation principle on a one-to-one basis for each energy storage unit in the energy storage device group, record the device serial number and location data, and acquire voltage data signals during the use of the energy storage device group. Step S2: Calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and analyze and iterate the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit, complete the temperature status marking of each energy storage unit, and obtain the temperature status data matrix of the energy storage unit. Based on the principle of thermoelectric power generation, the voltage signals measured on each energy storage unit are converted into surface temperature data of the energy storage unit with high precision by measuring the reference ambient temperature. The signal resolution accuracy is improved through multiple iterative calculations. The specific calculation formula is as follows: in, This refers to the temperature of the outer heat-conducting fins, which is the surface temperature of the energy storage unit. It is a voltage signal. The total resistance of the load, including the traffic lights. The number of P-type and N-type semiconductors in the temperature measurement region is represented by the logarithm. The length of each pair of P-type and N-type semiconductors. This is the semiconductor length conversion factor. To process the fillet radius, Semiconductor conductivity For semiconductor thickness, For semiconductor width, This is the calibration factor for the semiconductor cross-sectional area. The Seebeck coefficient of the P-type semiconductor in the temperature measurement zone of the equipment. The Seebeck coefficient of the N-type semiconductor in the temperature measurement zone of the equipment. The temperature of the outer heatsink is the reference ambient temperature. This is the system calibration factor; Step S3: Based on accuracy and safety requirements, perform data processing on each energy storage unit with temperature status that needs attention, using spatial and temporal dimensions, to obtain the spatial and temporal temperature gradient data of the points of interest. The temperature time gradient at a specific moment is defined as the optimal slope solution that minimizes the weighted loss function of the local linear regression model of temperature within the monitoring time window. Considering data accuracy, a forgetting factor is introduced. The temperature time gradient is calculated for all energy storage units marked as key interest states or higher. The specific formula is as follows: in, For temperature time gradient, To monitor the time window, To monitor the width of the time window, The time interval between adjacent sampling, To analyze the obtained energy storage unit temperature data, The forgetting factor constant, ; Step S4: Based on accuracy and safety requirements, the gradient data peaks and spatial focal points of the points of interest are obtained. The energy storage unit points corresponding to the processing results are classified and marked as points of various health status types to obtain a set of health status types. This enables centralized, point-to-point temperature monitoring of high-density energy storage device groups. Based on the obtained set of health status types, a set of processing methods is calculated, and measures are taken for the energy storage units within different processing method sets to improve the efficiency of battery pack health management, reduce the overall battery pack replacement frequency, and extend the service life of energy storage devices. The measures include alarm, retaining attention, and canceling attention.
2. The method for temperature monitoring and alarm of an energy storage device as described in claim 1, characterized in that: Step S2 includes the following steps. Step S201: Calibrate the temperature monitoring equipment, monitor the reference ambient temperature data, and obtain basic data for signal analysis; Step S202: Analyze and iterate the voltage data signal transmitted by the temperature monitoring device to obtain high-precision surface temperature data of the energy storage unit; Step S203: Based on the permissible temperature health value of the energy storage unit and combined with economic requirements, complete the temperature status marking of each energy storage unit. Step S204: Complete the signal analysis and temperature status marking of all energy storage units at all locations, and form an energy storage unit temperature status data matrix based on location information.
3. The method for temperature monitoring and alarm of an energy storage device as described in claim 1, characterized in that: Step S3 includes the following steps. Step S301: Set the monitoring time window width according to the required accuracy of temperature monitoring, and set the observation time window width according to the equipment safety requirements; Step S302: Perform spatial dimension-based data processing on each energy storage unit with temperature status that needs to be monitored to obtain the spatial temperature gradient data of the points of concern. Step S303: Perform time-based data processing on each energy storage unit with the temperature state that needs to be monitored to obtain the temperature time gradient data of the points of interest.
4. A temperature monitoring and alarm device for an energy storage device, used to implement the temperature monitoring and alarm method for an energy storage device as described in any one of claims 1-3, characterized in that: Including temperature measurement area and alarm area, The temperature measurement zone includes an inner heat-conducting sheet, an inner electrode sheet, a P-type semiconductor, an N-type semiconductor, an outer electrode sheet, and an outer heat-conducting sheet. The inner heat-conducting sheet is in close contact with the outer surface of the energy storage device or the surface to be measured, while the outer heat-conducting sheet is exposed to the external environment of the energy storage device. When the energy storage device is working, the surface temperature rises, creating a temperature difference with the external ambient temperature. The inner heat-conducting sheet conducts the surface temperature of the energy storage device to the inner electrode sheet and the inner surfaces of the P-type and N-type semiconductors. The outer heat-conducting sheet conducts the surface temperature of the energy storage device to the outer electrode sheet and the outer surfaces of the P-type and N-type semiconductors. Due to the Seebeck effect, a current is generated inside the P-type and N-type semiconductors under the temperature difference at both ends. This current passes through the inner and outer electrode sheets, generating a voltage on both sides of the electrodes in the temperature measurement zone. The alarm zone includes a device box, a device cover, an insulating heat insulation pad, indicator lights, and wires and signal lines. The device box houses the temperature measurement zone components and is attached to the surface of the energy storage device during use. The device cover secures the temperature measurement zone components and indicator lights. The insulating heat insulation pad surrounds the outside of the temperature measurement zone. Internal wires are arranged inside the device box, generating voltage through the temperature measurement zone components to power the indicator lights. Signal lines are arranged inside the device box, outputting voltage signals outwards.
5. The energy storage device temperature monitoring and alarm device as described in claim 4, characterized in that: When the temperatures at both ends of the temperature monitoring and alarm device of the energy storage device are different, the circuit path of the temperature measuring zone automatically generates a voltage proportional to the temperature difference. The power is supplied to the indicator light with color temperature adjustment function in the alarm zone. The color temperature of the indicator light increases with the increase of voltage. At the same time, a voltage signal line can be connected to the signal port of the alarm zone to output a voltage signal.
6. The energy storage device temperature monitoring and alarm device as described in claim 5, characterized in that: The voltage across the circuit path formed by the temperature measuring zone is proportional to the temperature difference. The temperature signal, which is difficult to transmit, is indicated one-to-one by transmitting a simple voltage signal. At the same time, the voltage signal is amplified by increasing the logarithm of the P-type semiconductor and the N-type semiconductor or the area of the temperature measuring zone.
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