Methods, systems, and models for handling the concordance effect of semiconductor components on PCB boards

Abstract

The application discloses a method, system and model for processing the synergistic effect of semiconductor components on a PCB (Printed Circuit Board), and the synergistic effect of the semiconductor components on the PCB under a compound environment of transient ionizing radiation and electromagnetic pulse is known in advance, so that reference is provided for protection design of the semiconductor components on the PCB, and the semiconductor components on the PCB are better protected.

Description

Technical Field

[0001] This application relates to, but is not limited to, the field of nuclear and radiation hardening technology, and in particular to a method, system, and model for handling the synergistic effect of semiconductor components on a PCB board under the combined environment of transient ionizing radiation and electromagnetic pulse. Background Technology

[0002] Transient X-rays are generated in nuclear explosions, ground-based nuclear radiation simulation systems (such as high-power pulsed accelerators), and controlled nuclear fusion systems (such as laser inertial confinement fusion). When these transient X-rays irradiate equipment, they interact with the equipment materials to generate photoelectrons. The movement of these electrons excites an electromagnetic field, which is called a system electromagnetic pulse. In these environments, the simultaneous presence of transient ionizing radiation and strong electromagnetic pulses poses a more severe challenge to the protection design of semiconductor components on PCBs.

[0003] If we can know in advance the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and electromagnetic pulse, we can provide a reference for the protection design of semiconductor components on PCBs. Summary of the Invention

[0004] This application provides a method, system, and model for handling the synergistic effect of semiconductor components on a PCB board, which can provide a reference for the protection design of semiconductor components on a PCB board, thereby enabling better protection of semiconductor components on the PCB board.

[0005] This invention provides a method for handling the co-occurrence effect of semiconductor components on a PCB board, comprising:

[0006] Under the condition of transient X-ray irradiation of the PCB board, the first pulse current on the target signal trace on the PCB board is obtained; under the condition of electromagnetic pulse irradiation of the PCB board, the second pulse current on the target signal trace on the PCB board is obtained.

[0007] The first pulse current and the second pulse current are input to the target semiconductor component on the PCB board through the target signal trace. The first transient current output by the target semiconductor component is obtained based on the first pulse current and the second pulse current.

[0008] In one exemplary instance, the method further includes: acquiring a second transient current generated within the target semiconductor device under conditions of transient X-ray irradiation of the target semiconductor device;

[0009] After acquiring the first transient current output by the target semiconductor device, the method further includes:

[0010] Based on the first transient current and the second transient current, the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse is obtained.

[0011] In one exemplary instance, obtaining the output current of the target semiconductor device under a combined environment of transient ionizing radiation and electromagnetic pulse includes:

[0012] The output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse is the sum of the first transient current and the second transient current.

[0013] In one exemplary instance, the first transient current, the first pulse current, and the second pulse current satisfy the following functional relationship:

[0014] I out,1 = f(I1+I2), where I out,1 I1 represents the first transient current, I2 represents the first pulse current, and I2 represents the second pulse current.

[0015] In one exemplary instance, the target signal trace comprises n traces; the first transient current, the first pulse current, and the second pulse current satisfy the following functional relationship: I out,1 =f[(I 11 +I 21 ),(I 12 +I 22 ),…(I 1n +I 2n )], where I out,1 I represents the first transient current. 11 I 12 …I 1n I represents the first pulse current on each of the target signal traces. 21 I 22 …I 2n These represent the second pulse current on each of the target signal traces.

[0016] This application also provides a system for processing the synergistic effect of semiconductor components on a PCB board, comprising: a generation unit, a first test module, and a second test module; wherein,

[0017] The generation module is used to simulate the generation of transient X-rays and electromagnetic pulses;

[0018] The first test unit is used to obtain the first pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of transient X-ray irradiation; and to obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of electromagnetic pulse irradiation.

[0019] The second test unit is used to input the first pulse current and the second pulse current into the target semiconductor component on the PCB board through the target signal trace. Based on the first pulse current and the second pulse current, the first transient current output by the target semiconductor component is obtained by measuring the measurement points on the PCB board.

[0020] In one exemplary instance, it further includes: a third test unit, configured to acquire a second transient current generated within the target semiconductor device by measuring the output terminal of the target semiconductor device under transient X-ray irradiation conditions.

[0021] In one exemplary instance, the device further includes a processing unit, configured to calculate the output current of the target semiconductor device under a combined environment of transient ionizing radiation and electromagnetic pulse based on the first transient current and the second transient current.

[0022] In one exemplary instance, the first test unit, the second test unit, and the third test unit are implemented through a physical test environment or through a simulation environment built using simulation software.

[0023] This application embodiment further provides a model for handling the concordance effect of semiconductor components on a PCB board, including: a first physical model and a second physical model; wherein,

[0024] The first physical model includes a PCB board and at least one target signal trace disposed on the PCB board, with measurement points disposed on each target signal trace; the first physical model is used to: obtain the first pulse current on the target signal trace on the PCB board by measuring each measurement point under the condition of transient X-ray irradiation of the PCB board; and obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of electromagnetic pulse irradiation of the PCB board.

[0025] The second physical model includes a PCB board and at least one target signal trace disposed on the PCB board. Each target signal trace is connected to a different input terminal of a target semiconductor device disposed on the PCB board. Measurement points are disposed on the signal traces connected to the output terminals of the target semiconductor device. The second physical model is used to: input a first pulse current and a second pulse current into the target semiconductor device on the PCB board through the target signal traces; and obtain the first transient current output by the target semiconductor device by measuring the measurement points on the PCB board based on the first pulse current and the second pulse current.

[0026] In one exemplary instance, it also includes: a third physical model comprising the target semiconductor device;

[0027] The third physical model is used to: obtain the second transient current generated in the target semiconductor device by measuring the output terminal of the target semiconductor device under transient X-ray irradiation conditions.

[0028] This application embodiment provides a model for processing the co-occurrence effect of semiconductor components on a PCB board, including: a PCB board, and at least one target signal trace disposed on the PCB board, each target signal trace being connected to a different input terminal of a target semiconductor component disposed on the PCB board, and a measurement point being disposed on the signal trace connected to the output terminal of the target semiconductor component.

[0029] The model is used to: obtain the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse by measuring the output terminal of the target semiconductor device under the conditions of transient X-ray and electromagnetic pulse irradiation of the PCB board.

[0030] Through the embodiments of this application, the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and electromagnetic pulse is known in advance, providing a reference for the protection design of semiconductor components on PCBs, thereby enabling better protection of semiconductor components on PCBs.

[0031] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description, claims, and drawings. Attached Figure Description

[0032] The accompanying drawings are used to provide a further understanding of the technical solutions of this application and constitute a part of the specification. They are used together with the embodiments of this application to explain the technical solutions of this application and do not constitute a limitation on the technical solutions of this application.

[0033] Figure 1 This is a schematic diagram of the environment of the PCB board under the combined environment of transient ionizing radiation and strong electromagnetic pulse in the embodiments of this application;

[0034] Figure 2 This is a flowchart illustrating the first embodiment of the method for handling the synergistic effect of semiconductor components on a PCB board in this application.

[0035] Figure 3 This is a schematic diagram of the physical model of the electromagnetic pulse current generated by the signal traces on the PCB board under transient X-ray irradiation in an embodiment of this application.

[0036] Figure 4 This is a schematic diagram of the physical model of the signal traces on the PCB board generating PCB field line coupling current under the irradiation of electromagnetic pulses in the embodiments of this application.

[0037] Figure 5 This is a schematic diagram of the physical model of the electromagnetic pulse effect of semiconductor components on the PCB board in the embodiments of this application;

[0038] Figure 6 This is a flowchart illustrating a second embodiment of the method for handling the synergistic effect of semiconductor components on a PCB board in this application.

[0039] Figure 7 This is a schematic diagram of the physical model of the transient dose rate effect of semiconductor components on the PCB board in the embodiments of this application;

[0040] Figure 8 This is a schematic diagram of the physical model of the synergistic effect of the PCB board under the combined environment of transient ionizing radiation and strong electromagnetic pulse in the embodiments of this application;

[0041] Figure 9 This is a schematic diagram of a system for processing the co-occurrence effect of semiconductor components on a PCB board, provided in an embodiment of this application. Detailed Implementation

[0042] To make the objectives, technical solutions, and advantages of this application clearer, the embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be noted that, unless otherwise specified, the embodiments and features described in these embodiments can be arbitrarily combined with each other.

[0043] Figure 1 This is a schematic diagram of the environment of the PCB board under the combined environment of transient ionizing radiation and strong electromagnetic pulse in the embodiments of this application, as shown below. Figure 1 As shown, in nuclear explosions, ground-based nuclear radiation simulation systems (such as high-power pulsed accelerators), and controlled nuclear fusion systems (such as laser inertial confinement fusion), PCB boards are simultaneously subjected to transient ionizing radiation (such as... Figure 1Irradiation by X-rays and electromagnetic pulses.

[0044] To more accurately study the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and strong electromagnetic pulses, this application proposes a method for handling the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and electromagnetic pulses, such as... Figure 2 As shown, it may include:

[0045] Step 200: Under the condition of transient X-ray irradiation of the PCB board, obtain the first pulse current on the target signal trace on the PCB board; under the condition of electromagnetic pulse irradiation of the PCB board, obtain the second pulse current on the target signal trace on the PCB board.

[0046] In one exemplary instance, when transient X-rays irradiate a PCB board, due to the photoelectric effect, Compton scattering, etc., signal traces or metal traces on the PCB board will emit electrons. These electrons are deposited on the substrate, i.e., the PCB board. The emission and deposition of charges generate an equivalent current source, which in turn causes a current response on the signal traces, and finally generates a first pulse current on the traces of the PCB board.

[0047] like Figure 3 In the physical model shown, a single target signal trace (such as a metal trace) is used (e.g.) Figure 3 Taking the traces in the PCB as an example, when X-rays irradiate the PCB, a current I1 will be generated on the metal trace. The current I1 is the first pulse current I1, which is also called the electromagnetic pulse current of the PCB system.

[0048] In one exemplary instance, for a target signal trace comprising n traces, when X-rays irradiate the PCB, the first pulse current generated on each metal trace is a pulse current I0. 11 Pulse current I 12 Pulse current I 13 …pulse current I 1n .

[0049] In one exemplary instance, when an electromagnetic pulse is applied to a PCB board, a PCB field line coupling current, also known as a second pulse current, is generated on the target signal traces, such as metal traces, due to field line coupling.

[0050] like Figure 4 In the physical model shown, a single target signal trace (such as a metal trace) is used (e.g.) Figure 4 Taking the trace in the PCB as an example, when an electromagnetic pulse shines on the PCB, a current I2 will be coupled out on the metal trace. The current I2 is the second pulse current I2.

[0051] In one exemplary instance, for a target signal trace comprising n traces, when an electromagnetic pulse strikes the PCB board, the second pulse current generated on each metal trace is respectively the pulse current I. 21 Pulse current I 22 Pulse current I 23 …pulse current I 2n .

[0052] In one exemplary instance, step 200 can be implemented by following... Figure 3 , Figure 4 The measurements can be obtained by building a physical testing environment based on the physical model shown, or by using simulation software. Figure 3 , Figure 4 The physical model shown is used for simulation testing.

[0053] Step 201: Input the first pulse current and the second pulse current into the target semiconductor component on the PCB board through the target signal trace, and obtain the first transient current output by the target semiconductor component based on the first pulse current and the second pulse current.

[0054] It should be emphasized that no transient X-rays or electromagnetic pulses were applied to the PCB board during this step.

[0055] Through such Figure 5 The physical model shown, taking the connection between a target signal trace (such as a metal trace) and the input of a target semiconductor device as an example, can yield the first transient current I. out,1 A function of (I1+I2) can be denoted as I out,1 = f(I1+I2). In an exemplary instance, the first transient current I... out,1 The acquisition can be done by following Figure 5 The measurements can be obtained by building a physical testing environment based on the physical model shown, or by using simulation software. Figure 5 The physical model shown is used for simulation testing.

[0056] In one exemplary instance, for the case where the target signal traces comprise n lines—that is, when there are n target signal traces connected to the input of the target semiconductor device—the following method is used: Figure 5 The physical model shown allows us to derive the first transient current I. out,1 For (I) 11 +I 21 ),(I 12 +I 22 ),(I 13 +I 23 ),…(I 1n +I 2nA function of ) can be denoted as I out,1 =f[(I 11 +I 21 ),(I 12 +I 22 ),…(I 1n +I 2n It should be noted that this is merely an example and is not intended to limit the scope of protection of this application. In actual testing or simulation, a simplified function can also be used to obtain the first transient current.

[0057] The injection of high-voltage, high-current pulses will cause transient and strong interference to the output signal of semiconductor components. If the pulse energy is very high, it may even cause severe avalanche breakdown inside the device, and excessive current will cause the internal temperature of the device to overheat and burn out. Through the embodiments of this application, the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and electromagnetic pulses is known in advance, providing a reference for the protection design of semiconductor components on PCBs, thus enabling better protection of semiconductor components on PCBs.

[0058] In one exemplary instance, because transient X-rays irradiate the target semiconductor device, a large number of electron-hole pairs are generated within the target semiconductor device. The movement of these electron-hole pairs causes the target semiconductor device to generate a large transient current, i.e., output a second transient current. This application also provides a method for handling the co-current effect of semiconductor devices on a PCB board, such as... Figure 6 As shown, it includes:

[0059] Step 600: Under the condition of transient X-ray irradiation of the PCB board, obtain the first pulse current on the target signal trace on the PCB board; under the condition of electromagnetic pulse irradiation of the PCB board, obtain the second pulse current on the target signal trace on the PCB board; under the condition of transient X-ray irradiation of the target semiconductor device, obtain the second transient current generated in the target semiconductor device.

[0060] In one exemplary instance, when transient X-rays irradiate a target semiconductor device, a large number of electron-hole pairs are generated within the target semiconductor device. The movement of these electron-hole pairs causes the target semiconductor device to output a large transient current, namely the second transient current.

[0061] like Figure 7 The physical model shown illustrates that when transient X-rays irradiate the target semiconductor device, a large number of electron-hole pairs are generated within the target semiconductor device. Figure 7 (Not shown in the image), the movement of electron-hole pairs will generate a second transient current I. out,2 In one exemplary instance, the second transient current can be obtained by following... Figure 7 The measurements can be obtained by building a physical testing environment based on the physical model shown, or by using simulation software. Figure 7 The physical model shown is used for simulation testing.

[0062] The implementation of obtaining the first pulse current and the second pulse current in step 600 is the same as in step 200, and will not be repeated here.

[0063] Step 601: Input the first pulse current and the second pulse current into the target semiconductor component on the PCB board through the target signal trace, and obtain the first transient current output by the target semiconductor component based on the first pulse current and the second pulse current.

[0064] The implementation of step 601 is the same as that of step 201, and will not be repeated here.

[0065] Step 602: Based on the first transient current and the second transient current, obtain the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse.

[0066] In one exemplary instance, the output current of the target semiconductor device under a combined environment of transient ionizing radiation and electromagnetic pulse is the sum of the first transient current and the second transient current.

[0067] like Figure 8 The physical model shown uses a single target signal trace and a metal trace connected to the input connection of the target semiconductor device (e.g., Figure 8 Taking the traces in the diagram as an example, the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse is expressed as I. out So, I out =I out,1 +I out,2 , among which, I out,1 = f(I1+I2), I out,1 When a current pulse is injected through a metal trace at a pin of a target semiconductor device, the response current I at the output terminal of the target semiconductor device is... out,2 I1 is the transient dose rate response current of the target semiconductor device, I2 is the electromagnetic pulse current of the PCB system, and I3 is the field line coupling current of the PCB.

[0068] Figure 8 The physical model shown illustrates the synergistic effect of semiconductor components on a PCB board under the combined environment of transient ionizing radiation and electromagnetic pulse. In one exemplary instance, the second transient current can be obtained by following... Figure 8 The measurements can be obtained by building a physical testing environment based on the physical model shown, or by using simulation software. Figure 8 The physical model shown was used for simulation testing. Simultaneously, through... Figure 8 The measurements of the physical model shown also verified the correctness of the method for handling the synergistic effect of semiconductor components on the PCB board in this application.

[0069] In one exemplary instance, if there are n metal traces connected to the input of the target semiconductor device, then I out,1 =f[(I 11 +I 21 ),(I 12 +I 22 ),…(I 1n +I 2n At this time, I out,1 The response current at the output terminal of a target semiconductor device when current pulses are injected through metal traces at n pins of the target semiconductor device.

[0070] Through the embodiments of this application, the synergistic effect of semiconductor components on PCBs under the combined environment of transient ionizing radiation and electromagnetic pulse is known in advance, providing a reference for the protection design of semiconductor components on PCBs, thereby enabling better protection of semiconductor components on PCBs.

[0071] The method for handling the synergistic effect of semiconductor components on a PCB board provided in this application embodiment is known in advance of the synergistic effect of semiconductor components on the PCB board under the combined environment of transient ionizing radiation and electromagnetic pulse. More specifically, it is known the first pulse current, second pulse current, first transient current, and second transient current generated by semiconductor components on the PCB board under the combined environment of transient ionizing radiation and electromagnetic pulse. Thus, when considering the protection design for semiconductor components on the PCB board, protection can be provided for any one or any combination of the following information according to actual needs: first pulse current, second pulse current, first transient current, and second transient current, thereby providing better protection for semiconductor components on the PCB board.

[0072] Figure 9 A schematic diagram of a system for processing the co-occurrence effect of semiconductor components on a PCB board, as provided in the embodiments of this application, is shown below. Figure 9 As shown, it may include: a generation unit, a first test unit, and a second test unit; wherein,

[0073] The generation unit is used to simulate the generation of transient X-rays and electromagnetic pulses. In one embodiment, the simulated transient X-rays and electromagnetic pulses are used to represent scenarios in nuclear explosions, ground-based nuclear radiation simulation systems (such as high-power pulse accelerators), and controlled nuclear fusion systems (such as laser inertial confinement fusion), where a PCB board is simultaneously exposed to transient ionizing radiation and electromagnetic pulses. In one embodiment, the generation unit can be a physical device for generating transient X-rays and electromagnetic pulses, or it can be simulated using simulation software.

[0074] The first test unit is used to obtain the first pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under transient X-ray irradiation; and to obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under electromagnetic pulse irradiation.

[0075] In one embodiment, the first test unit can be determined by following the instructions in order to perform the test. Figure 3 , Figure 4 The physical model shown can be used to build an entity testing environment, or it can be built using simulation software according to... Figure 3 , Figure 4 The simulation environment built using the physical model shown.

[0076] The second test unit is used to input a first pulse current and a second pulse current to a target semiconductor component on the PCB board through a target signal trace. Based on the first pulse current and the second pulse current, the first transient current output by the target semiconductor component is obtained by measuring the measurement points on the PCB board. In one embodiment, the second test unit can be configured to... Figure 5 The physical model shown can be used to build an entity testing environment, or it can be built using simulation software according to... Figure 5 The simulation environment built using the physical model shown.

[0077] In one exemplary instance, the system for handling the co-current effect of semiconductor components on a PCB board may further include: a third testing unit, configured to acquire a second transient current generated within the target semiconductor component by measuring its output terminal under transient X-ray irradiation conditions. Thus, the output current of the target semiconductor component under the combined environment of transient ionizing radiation and electromagnetic pulse can be obtained by calculating the sum of the first and second transient currents. In one embodiment, the third testing unit may be configured to... Figure 7 The physical model shown can be used to build an entity testing environment, or it can be built using simulation software according to... Figure 7 The simulation environment built using the physical model shown.

[0078] In one exemplary embodiment, the system may also include a processing unit for calculating the output current of the target semiconductor device under a combined environment of transient ionizing radiation and electromagnetic pulse, based on the first transient current and the second transient current. In one exemplary embodiment, the processing module may be a computing system such as a CPU with data processing capabilities.

[0079] In one exemplary instance, current information can be obtained by measuring instruments through a measurement point.

[0080] The system for handling the synergistic effect of semiconductor components on a PCB board, provided by the embodiments of this application, allows for prior knowledge of the synergistic effect of semiconductor components on the PCB board under the combined environment of transient ionizing radiation and electromagnetic pulse, providing a reference for the protection design of semiconductor components on the PCB board and enabling better protection of semiconductor components on the PCB board.

[0081] This application also provides a model for handling the concordance effect of semiconductor components on a PCB board, comprising at least: a first physical model and a second physical model; wherein,

[0082] The first physical model includes a PCB board and at least one target signal trace set on the PCB board, with measurement points set on each target signal trace. The first physical model is used to: obtain the first pulse current on the target signal trace on the PCB board by measuring each measurement point under the condition of transient X-ray irradiation of the PCB board; and obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of electromagnetic pulse irradiation of the PCB board.

[0083] In one embodiment, the first physical model can be as follows: Figure 3 or Figure 4 As shown.

[0084] The second physical model includes a PCB board and at least one target signal trace disposed on the PCB board. Each target signal trace is connected to a different input terminal of a target semiconductor device disposed on the PCB board. Measurement points are disposed on the signal traces connected to the output terminals of the target semiconductor device. The second physical model is used to: input a first pulse current and a second pulse current into the target semiconductor device on the PCB board through the target signal traces; and obtain the first transient current output by the target semiconductor device by measuring the measurement points on the PCB board based on the first pulse current and the second pulse current.

[0085] In one embodiment, the second physical model can be as follows: Figure 5 As shown.

[0086] In one exemplary instance, the model for processing the synergistic effect of semiconductor components on a PCB board provided in this application embodiment may further include: a third physical model; the third physical model includes the target semiconductor component; the third physical model is used to: obtain the second transient current generated in the target semiconductor component by measuring the output terminal of the target semiconductor component under transient X-ray irradiation conditions.

[0087] In one embodiment, the third physical model can be as follows: Figure 7 As shown.

[0088] This application embodiment also provides a model for processing the co-occurrence effect of semiconductor components on a PCB board, including: a PCB board, and at least one target signal trace disposed on the PCB board, each target signal trace being connected to a different input terminal of a target semiconductor component disposed on the PCB board, and a measurement point being disposed on the signal trace connected to the output terminal of the target semiconductor component.

[0089] The model for handling the co-occurrence effect of semiconductor components on a PCB board is used to: obtain the output current of the target semiconductor component under the combined environment of transient ionizing radiation and electromagnetic pulse by measuring the output terminal of the target semiconductor component under the conditions of transient X-ray and electromagnetic pulse irradiation of the PCB board.

[0090] In one embodiment, the model for handling the co-occurrence effect of semiconductor components on the PCB board can be as follows: Figure 8 As shown.

[0091] Although the embodiments disclosed in this application are as described above, the content described is merely for the purpose of understanding this application and is not intended to limit this application. Any person skilled in the art to which this application pertains may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in this application; however, the scope of patent protection of this application shall still be determined by the scope defined in the appended claims.

Claims

1. A method for handling the co-occurrence effect of semiconductor components on a PCB board, characterized in that, include: Under transient X-ray irradiation of a PCB board, the first pulse current on the target signal trace on the PCB board is obtained; Under the condition that an electromagnetic pulse irradiates the PCB board, the second pulse current on the target signal trace on the PCB board is obtained; The first pulse current and the second pulse current are input to the target semiconductor component on the PCB board through the target signal trace. Based on the first pulse current and the second pulse current, the first transient current output by the target semiconductor component is obtained. The first transient current satisfies the following functional relationship with the first pulse current and the second pulse current: ,in, This represents the first transient current. This represents the first pulse current. This indicates the second pulse current; Under the condition of transient X-ray irradiation of a target semiconductor device, a second transient current generated within the target semiconductor device is obtained; Based on the first transient current and the second transient current, the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse is obtained.

2. The method according to claim 1, wherein, The step of obtaining the output current of the target semiconductor device under a combined environment of transient ionizing radiation and electromagnetic pulse includes: The output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse is the sum of the first transient current and the second transient current.

3. The method according to claim 1, wherein, The target signal trace comprises n lines; the first transient current, the first pulse current, and the second pulse current satisfy the following functional relationship: ,in, This represents the first transient current. , … These represent the first pulse current on each of the target signal traces. , … These represent the second pulse current on each of the target signal traces.

4. A system for handling the co-occurrence effect of semiconductor components on a PCB board, characterized in that, include: The test unit consists of a generation unit, a first test unit, and a second test unit; among which, The generation unit is used to simulate the generation of transient X-rays and electromagnetic pulses; The first test unit is used to obtain the first pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of transient X-ray irradiation; and to obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of electromagnetic pulse irradiation. The second test unit is used to input a first pulse current and a second pulse current to the target semiconductor component on the PCB board through the target signal trace. Based on the first pulse current and the second pulse current, the first transient current output by the target semiconductor component is obtained by measuring the measurement points on the PCB board. The first transient current satisfies the following functional relationship with the first pulse current and the second pulse current: ,in, This represents the first transient current. This represents the first pulse current. This indicates the second pulse current; It also includes: a third test unit, used to obtain the second transient current generated in the target semiconductor device by measuring the output terminal of the target semiconductor device under transient X-ray irradiation conditions; The processing unit is used to calculate the output current of the target semiconductor device under the combined environment of transient ionizing radiation and electromagnetic pulse based on the first transient current and the second transient current.

5. The system according to claim 4, wherein, The first test unit, the second test unit, and the third test unit are implemented through a physical test environment or through a simulation environment built using simulation software.

6. A model for handling the concordance effect of semiconductor components on a PCB board, characterized in that, include: First physical model, second physical model; among them... The first physical model includes a PCB board and at least one target signal trace disposed on the PCB board, with measurement points disposed on each target signal trace; the first physical model is used to: obtain the first pulse current on the target signal trace on the PCB board by measuring each measurement point under the condition of transient X-ray irradiation of the PCB board; and obtain the second pulse current on the target signal trace on the PCB board by measuring the measurement points on the PCB board under the condition of electromagnetic pulse irradiation of the PCB board. The second physical model includes a PCB board and at least one target signal trace disposed on the PCB board. Each target signal trace is connected to a different input terminal of a target semiconductor device disposed on the PCB board. Measurement points are disposed on the signal traces connected to the output terminals of the target semiconductor device. The second physical model is used to: input a first pulse current and a second pulse current into the target semiconductor device on the PCB board through the target signal traces; and obtain a first transient current output by the target semiconductor device by measuring the measurement points on the PCB board based on the first pulse current and the second pulse current. The first transient current satisfies the following functional relationship with the first pulse current and the second pulse current: ,in, This represents the first transient current. This represents the first pulse current. This indicates the second pulse current; It also includes: a third physical model of the target semiconductor device; the third physical model is used to: obtain the second transient current generated in the target semiconductor device by measuring the output terminal of the target semiconductor device under transient X-ray irradiation conditions.

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