Analysis automation system using thermal desorption and analysis method using the same

Abstract

Disclosed is an analysis automation system using thermal desorption and an analysis method using the same. The system includes an automation system for rapidly performing a wafer defect analysis process, comprising a heating device including a heater for heating a wafer, an analysis device for receiving and analyzing a gas containing a contaminant desorbed from the heated wafer, and a coupling portion provided outside a chamber and coupled to the wafer. The system further includes a wafer transfer device formed with an arm for transferring the coupling portion, and a control portion for controlling the wafer transfer device to insert the wafer into the chamber and transfer the wafer in the chamber to the outside. Thus, the thermal desorption analysis method is used, and an automation system for transferring the wafer is constructed to omit a cooling process of the chamber, thereby continuously supplying the wafer, having an effect of shortening a required time. In addition, after sampling is completed, internal residual gas can be removed by injection of an inactive gas and suction of a vacuum pump, thereby deriving optimal data.

Description

Technical Field

[0001] This invention relates to an automated thermal desorption (TD) analysis system, and more specifically to an automated TD analysis system including an automated system for rapidly performing wafer defect analysis processes, and an analysis method using the system. Background Technology

[0002] In semiconductor manufacturing, reactive gases are adsorbed onto the film surface formed on the wafer, resulting in defects. Thermal desorption (TD) analysis is used to thermally desorb the adsorbed substances on the wafer surface and analyze the desorbed contaminants. Contaminant analysis has the advantage of being able to trace which process the wafer defect occurred in. Various methods exist for detecting wafer contamination. Among them, TD analysis shows similar results for the analysis of ordinary non-pattern wafers compared to methods utilizing gases generated by the wafer inside a front-opening unified pod (FOUP) and methods that capture and detect contaminants by spraying or contacting solutions onto the wafer surface. However, it demonstrates advantages for the analysis of patterned wafers.

[0003] However, analyzing wafers one by one is time-consuming. Furthermore, the hot gases inside the chamber during heating pose a safety hazard, and the chamber must be cooled before replacing the wafer for analysis due to the intense heat. Therefore, further cooling and heating times are required, and continuous analysis is not possible, resulting in the inability to quickly identify defective wafers.

[0004] Therefore, there is a need for an apparatus and method that can shorten the time required for TD analysis. Summary of the Invention

[0005] The present invention is proposed to solve the problems mentioned above. The purpose of the present invention is to provide an automated TD analysis system and an analysis method using the system. The automated TD analysis system utilizes TD analysis and, in order to shorten the required time, the system is constructed to omit the cooling process of the chamber.

[0006] In addition, a TD analysis automation system and an analysis method using the system are proposed. In order to reduce the size of the chamber, the TD analysis automation system has a drive unit that runs through the chamber to move the chuck up and down.

[0007] Furthermore, an automated TD analysis system and an analysis method utilizing the system are proposed. The automated TD analysis system includes a structure for preventing ion adsorption on the conduit during the movement of the sampled gas.

[0008] Furthermore, an automated TD analysis system and an analysis method utilizing the system are proposed. The automated TD analysis system includes a structure for removing internal residual gas after sampling is completed.

[0009] The TD analysis automation system of the present invention performs analysis by capturing contaminants, comprising: a heating device including a chamber providing space for heating a wafer and a heater disposed inside the chamber for generating heat; an analysis device connected to a sampling port for analyzing contaminants drawn through the sampling port, wherein the sampling port is connected to the interior of the chamber; a wafer transfer device with an arm; and a control unit for controlling the wafer transfer device to insert a wafer into the chamber and to transfer a wafer from the chamber to the outside.

[0010] Furthermore, it is characterized by comprising: a cover body disposed inside the cavity and configured to be separated from the inner surface of the cavity by a connecting member fixed to the cavity; and a chuck configured to be opposite to the cover body and to move up and down by a drive unit connected to the cavity, thereby forming a setting space for wafer setting between the cover body and the chuck.

[0011] Furthermore, it is characterized by including a rod pin with one end formed between the cover and the chuck for wafer placement, and the other end of the rod pin being configured to engage with the chuck or to be disposed through a through hole formed on the chuck and to engage with or contact the inner surface of the chamber.

[0012] Furthermore, the characteristic is that the rod pin is disposed through the chuck, and the cross-sectional area of ​​the end of the rod pin that contacts the wafer is formed to be larger than the cross-sectional area of ​​the through hole, and the end blocks the through hole by the action of the chuck.

[0013] Furthermore, the feature is that the driving unit is disposed through the cavity and is connected to and driven by an external device disposed outside the cavity.

[0014] Furthermore, the chamber is characterized by having a cooling component embedded in the outer wall and disposed on the outer surface of the outer wall.

[0015] Furthermore, it is characterized by including: one or more gas ports disposed through the chamber, the gas ports being used to inject inactive gas into the chamber.

[0016] Furthermore, it is characterized in that one or more gas ports are provided between the cover and the chuck.

[0017] Furthermore, the sampling port is connected to the analysis device via a conduit, the conduit including a heating element for dissipating heat, the heating element and the conduit being connected to a control unit, thereby controlling the temperature of the conduit to a set temperature.

[0018] Furthermore, the analytical apparatus is characterized by, after capturing pollutants using a solution, comprising one or more of the following methods: a method for analyzing pollutants using their chemical, physical, and electrical properties; a method for analyzing pollutants using their light absorption and light emission properties; a method for analyzing pollutants after ionization; and a method for analyzing pollutants after reacting with ionized substances.

[0019] Furthermore, a TD analysis automation method utilizing a TD analysis automation system includes: a wafer loading step, in which the wafer transfer device inserts a wafer into the interior of the chamber and loads it onto one end of a lever pin through a preset action; a heating preparation step, in which a drive unit moves a chuck to position the chuck close to a housing; a wafer heating step, in which a heater disposed within the chamber heats the wafer to desorb contaminants; a sampling step, in which the contaminants desorbed by heating are discharged through a sampling port provided through the housing; and an analysis step, in which the analysis device analyzes the sampled contaminants.

[0020] Furthermore, the characteristic feature is that, in the wafer heating step, the temperature of the heater is controlled by real-time detection of the wafer temperature.

[0021] Furthermore, it is characterized in that, after the sampling step, a gas exchange step is included, in which an inactive gas is supplied to the interior of the chamber and the interior gas is discharged through an outlet formed in the chamber.

[0022] Furthermore, the feature is that, after the analysis step, a wafer replacement step is included, in which the wafer after sampling is completed is transferred to the outside of the chamber via a wafer transfer device and another wafer is loaded. The wafer replacement step includes a cooling step, in which the heated wafer is transferred to the outside of the chamber and waits outside the chamber for a predetermined time for natural cooling.

[0023] Furthermore, the feature is that, after the analysis step, a wafer replacement step is included, in which the wafer after sampling is completed is transferred to the outside of the chamber via a wafer transfer device and another wafer is loaded. The wafer replacement step includes a cooling step in which the heated wafer is transferred to a cooling chamber located outside the chamber. During the cooling of the wafer, another wafer is transferred to the inside of the heating device and analyzed.

[0024] Furthermore, the TD analysis automation method is characterized by comprising: a chamber contamination level detection step, supplying an inactive gas into the chamber and detecting the contamination level inside the chamber through a second sampling port provided through the chamber.

[0025] This invention utilizes the TD analysis method and constructs an automated system for transferring wafers, eliminating the cooling process of the chamber and continuously supplying wafers, thus shortening the required time.

[0026] Furthermore, by placing the drive unit for moving the chuck up and down on the outside of the chamber, the size of the chamber is reduced, which has the advantage of reducing the time and energy required for heating the chamber.

[0027] In addition, the conduit used to connect the heating device and the analysis device includes a heating element that has the effect of maintaining the conduit at a set temperature and preventing ions from being adsorbed onto the conduit.

[0028] In addition, after sampling, residual gas can be removed by injecting inactive gas and evacuating with a vacuum pump, thereby obtaining the best data. Attached Figure Description

[0029] Figure 1 This is a structural diagram of the present invention.

[0030] Figure 2 This is a detailed structural diagram of the present invention.

[0031] Figure 3 This is a diagram of the chamber structure of the present invention.

[0032] Figure 4 and Figure 5 yes Figure 3 Enlarged image.

[0033] Figure 6 This is a connection diagram for the analyzer. Detailed Implementation

[0034] Analytical systems that analyze contaminants thermally desorbed by heating a wafer typically analyze one wafer at a time. Due to the intense heat, the chamber needs to be cooled before the wafer can be replaced, which has the disadvantages of requiring both cooling and heating time.

[0035] This invention proposes a TD analysis automation system and an analysis method using the system, wherein the TD analysis automation system is constructed as an automation system in order to shorten operation time.

[0036] The TD analysis automation system of the present invention having the structure described above and the analysis method using the system will now be described in detail with reference to the accompanying drawings.

[0037] This invention can be modified in many ways and has many embodiments. Specific embodiments are illustrated and described in detail below with reference to the accompanying drawings. However, it should be understood that these specific embodiments are not intended to limit the invention to specific implementations, but rather to include all modifications covered within the spirit and technical scope of this invention.

[0038] (1) Structural diagram of the present invention

[0039] Figure 1 This is a schematic diagram of the present invention. (Refer to...) Figure 1 The device comprises a wafer transfer device 100 for loading wafers, a heating device 200 for desorbing contaminants by heating the wafers, and an analysis device 300 for receiving and analyzing the desorbed contaminants.

[0040] Since the wafer transfer device 100, the heating device 200 and the analysis device 300 are configured as a single unit, leakage of the gas used is prevented, and the wafer is isolated from the outside to prevent contamination when the wafer is moved by the wafer transfer device 100.

[0041] Conventional devices require wafer replacement after cooling the chamber due to the intense heat, resulting in lengthy chamber cooling and reheating processes. However, the wafer transfer device 100 of this invention includes a bonding portion that attaches to the wafer, and its operation is programmed to move the wafer and bonding portion to the inside or outside of the chamber. This allows for wafer replacement within a heated chamber without the need for chamber cooling. Furthermore, the bonding portion and the wafer transfer device are formed of a heat-resistant material with minimal thermal deformation, such as ceramic. The heated wafer is then transferred to the outside of the heating device 200 chamber for additional cooling. This invention eliminates the chamber cooling time, enabling continuous wafer defect analysis.

[0042] Figure 1 This is a schematic diagram of the appearance of the present invention. As for the appearance, it can be modified as needed.

[0043] Figure 2 This is a structural diagram of the present invention. (Refer to...) Figure 2 The device includes: a heating device 200, comprising a chamber 220 providing space for heating a wafer and a heater 250 disposed inside the chamber for generating heat; an analysis device 300 connected to a sampling port 311 for analyzing contaminants drawn through the sampling port, wherein the sampling port 311 is connected to the interior of the chamber; a wafer transfer device 100 with an arm; and a control unit for controlling the wafer transfer device to insert a wafer into the chamber and to transfer a wafer from the chamber to the outside.

[0044] The heating device 200 is formed by a chamber 220 including a heater 250, and a gate 210 connected to a wafer transfer device is formed on one side of the heating device 200. The wafer transfer device is located outside the chamber and includes a connection part for attaching with the wafer. Through a built-in automated program, the wafer is transferred into or from the chamber 220 to the outside via the gate 210 and the wafer inlet / outlet 221. The wafer installed inside the chamber 220 by the wafer transfer device is heated by the heater 250 located inside the chamber 220, and the gas containing pollutants desorbed by heating moves to the analyzer 300 through the conduit 310. At this time, the control unit receives the temperature of the components located inside the chamber in real time and controls the temperature of the heater. Regarding the temperature detection method, the cover 230 and the chuck 240 are made of transparent quartz, and the wafer temperature is detected in real time by a light sensor located inside the chamber, and the heating temperature is adjusted accordingly.

[0045] The analytical apparatus 300 captures contaminants and analyzes their ions. Ion analysis allows for easy tracking of the process in which defects in a given wafer occurred. The analytical apparatus 300 can employ various analytical methods. For example, methods include capturing contaminants in a solution and then analyzing them using their chemical, physical, and electrical properties; analyzing them using their light absorption and light emission properties; analyzing them after ionizing the contaminants; and analyzing them after reacting the contaminants with ionized substances.

[0046] After heating and analysis, the wafer is transferred to the outside of the chamber 220 via the wafer transfer device 100. For residual gas inside the chamber 220, a vacuum pump or an injection of inactive gas is used to ventilate the interior of the chamber 220. Gas discharged outside the chamber 220 is filtered by a collector 400 to remove contaminants and gases before being discharged to the outside.

[0047] In this invention, the wafer can be heated using either a direct heating method or an indirect heating method. Direct heating involves placing the wafer on a heating plate (not shown) and heating it directly. Indirect heating involves using a lamp or other heater to heat the wafer through conduction, convection, radiation, or other methods, without directly heating the wafer. Furthermore, the chuck 240 and the housing 230 can be formed of transparent quartz, allowing light energy to penetrate and heat the wafer.

[0048] Furthermore, a valve (not shown) may be formed between the gate 210 and the wafer inlet / outlet 221. This valve may be a cooling type valve. The cooling type valve has an internal orifice through which various coolants can be supplied and used to cool the valve, preventing overheating. Process cooling water (PCW), ultrapure water (UPW), compressed dry air (CDA), etc., can be used as the cooling water; the type of cooling water is not limited.

[0049] Figure 3 This is a structural diagram of the chamber in this invention. (Refer to...) Figure 3 The device is characterized by comprising: a cover 230 disposed inside the cavity 220 and configured to be separated from the inner surface of the cavity by a connecting member 231 fixed to the cavity; and a chuck 240 configured to be opposite to the cover and to move up and down by a driving part 241 connected to the cavity, forming a setting space for wafer setting between the cover and the chuck.

[0050] Although the figure shows that the heater 250 is located at the upper end of the chamber 220, the position of the heater 250 is not limited, and multiple heaters 250 may be formed.

[0051] The housing 230 is disposed in the center of the chamber 220 and spaced apart from the inner surface of the chamber 220 by a connecting member 231. The connecting member 231 fixes the position of the housing 230 by engaging with the outer surface of the housing 230 and the inner surface of the chamber 220. The housing 230 is formed with a hole for connection to an analytical device, and a sampling port 311 is inserted into the hole to collect gas containing contaminants desorbed from the wafer. The inner surface of the housing can be formed into a predetermined shape to mate with a chuck 240.

[0052] The chuck 240 is positioned opposite the cover 230 and moves up and down via a drive unit 241 attached to the outer surface of the chuck 240. A groove is formed on the inner surface of the chuck 240 to place a wafer between the chuck 240 and the cover 230.

[0053] The drive unit 241 is disposed through the chamber and is connected to an external device disposed outside the chamber 220, and moves up and down together with the chuck 240. The drive unit 241 is moved by hydraulic or pneumatic power. Since the drive unit is disposed through the chamber, it has the following advantages: the overall volume of the chamber can be reduced, and the time and energy required for heating can be reduced due to the reduced volume of the chamber.

[0054] A lever pin 242 is provided between the housing 230 and the chuck 240 for placing a wafer. The lever pin 242 is positioned between the chuck 240 and the housing 230 with one end in contact with the wafer, and is configured to pass through the chuck 240 while its other end engages or contacts the inner surface of the chamber 220. Alternatively, the lever pin 242 can be positioned between the chuck 240 and the housing 230 with one end in contact with the wafer, and its other end engaged with the inner surface of the chuck 240. When the lever pin is positioned so that its other end contacts the inner surface of the chamber, the lever pin is supported by the chuck and moves away from the inner surface of the chamber as the chuck rises.

[0055] Furthermore, the lever pin can be coupled with an additional drive unit and moved up and down. By further including the additional drive unit, it is possible to control the pin to be stably mounted on the transfer device, or for the wafer disposed on the lever pin to be stably mounted on the transfer device.

[0056] As shown in the figure, this embodiment is described based on an example in which one end of the rod pin 242 is disposed between the chuck 240 and the cover 230, and the rod pin 242 passes through the chuck 240 while its other end is attached to the lower surface of the chamber 220.

[0057] One or more cooling components 260 are provided, and they are configured to prevent heat generated by the heater 250 from being transferred and affecting the components disposed outside the chamber 220. The cooling components 260 are configured to be built into the outer wall of the chamber 220, and may be disposed on the outer surface in contact with the frame if necessary.

[0058] The chamber 220 is provided with a gas port 222 for injecting inert gas. More than one gas port 222 is provided inside the chamber 220 for injecting inert gas to expel residual gas from the interior. The gas port 222 can be connected to a valve and a mass flow controller (MFC) to control the supply of inert gas.

[0059] A gas port 222 is provided between the chuck 240 and the housing 230 for injecting inactive gas. Residual gas is discharged through an outlet 223 formed on the chamber 220. Regularly venting residual gas prevents safety accidents and allows for accurate analysis.

[0060] In addition, during the sampling of pollutants, the supply of inactive gases can be supplied or stopped as needed.

[0061] Figure 4 and Figure 5 yes Figure 3 Enlarged image. Figure 4 This is a magnified view of the heating device 200, showing the enlarged state of the loaded wafer. (Refer to...) Figure 4 The housing 230 is fixed in position within the chamber 220 by means of the connecting component 231. As the chuck 240 rises via the drive unit 241, the wafer mounting pin 242 is inserted into the through hole of the chuck 240, thereby setting the wafer on the upper surface of the chuck 240.

[0062] The wafer is heated by a heater 250 within chamber 220, and the contaminants desorbed by heating are transferred to the analysis device 300 through a sampling port 311 that penetrates the upper side of chamber 220. The sampling port 311 penetrates the top surface of cover 230 or is inserted into a hole formed in cover 230, thereby transferring gas containing contaminants desorbed from the wafer.

[0063] The sampling port 311 is configured to pass through the heater 250, or the heater 250 is configured to be adjacent to the sampling port, thereby preventing the sampled gas from cooling as it moves to the analyzer 300.

[0064] The chamber 220 includes a gas port 222 for injecting an inactive gas. After the heating and sampling steps are completed, an inactive gas is injected to expel any residual gas inside. Multiple gas ports 222 are provided within the chamber 220, with a portion of these ports positioned between the housing 230 and the chuck 240 to expel residual gas.

[0065] One end of the lever pin 242 is disposed between the chuck 240 and the housing 230, and the lever pin 242 passes through the chuck 240 while its other end is attached to the bottom surface of the chamber 220. One end of the lever pin 242 is formed such that the cross-sectional area of ​​the end is wider than the cross-sectional area of ​​the through hole, so as to stably place the wafer. The lever pin 242 is disposed through the through hole 240-1 formed on the chuck 240, and the chuck 240 moves up and down by the drive part 241 provided on the outer surface, while the lever pin 242 is fixed inside the chamber 220 and does not move.

[0066] At this time, as the chuck 240 rises via the drive unit 241, the wafer positioned at the upper end of the lever pin 242 is placed onto the top surface of the chuck 240. An insertion hole for inserting the end of the lever pin 242 is formed on the inner surface of the chuck 240. The lever pin 242 is disposed in the through hole 240-1, and the cross-sectional area of ​​the end of the lever pin 242 is formed to be larger than the cross-sectional area of ​​the through hole 240-1, thereby blocking gas flow.

[0067] Thus, the wafer is positioned between the chuck 240 and the cover 230. Heating desorbs contaminants, and the end of the pin 242 blocks the through-hole 240-1, thereby preventing contaminants from leaking through the through-hole 240-1. At this time, the shape of the through-hole, the shape of the pin's end, and the shape of the insertion hole for the pin's end can be deformed. The pin is made of the same material as the chuck, thereby preventing damage from thermal expansion.

[0068] Figure 5 This is a schematic diagram illustrating the removal of residual gas through the elimination of inert gas. (Refer to...) Figure 5 The outlet 223 is connected to a second vacuum pump 410 for evacuating gas from the chamber and to the outside, and is also connected to a collector 400 for purifying the discharged gas. After heating and sampling, inert gas is injected through one or more gas ports 222. The residual gas inside, together with the injected inert gas, is discharged to the outside of the chamber 220 through the outlet 223 formed in the chamber 220. The discharged gas is transferred through a gas discharge pipe and filtered by the collector 400 to remove contaminants and gases before being discharged to the outside. Furthermore, since the gas discharge pipe is connected to the second vacuum pump 410, it has the advantage of periodically ventilating the interior of the chamber 220.

[0069] Figure 6 This is a schematic diagram showing the connection between the heating device and the analysis device. (Refer to...) Figure 6 The analysis device 300 is connected to the heating device 200, which can analyze the contaminants desorbed from the wafer and detect the air in the chamber as needed.

[0070] The heating device 200 and the analysis device 300 are connected by a conduit 310 for transferring gas. The conduit 310 is fixed by a sampling port 311 located outside the heating device 200. The sampling port 311 is configured to penetrate the housing 230 inside the chamber 220. Contaminants desorbed by heating a wafer located between the housing 230 and the chuck are transferred to the analysis device through the sampling port. Contaminants can be transferred to the analysis device by a temperature rise inside the chamber, or by a first vacuum pump 314 connected to the analysis device. The conduit 310 connecting the heating device and the analysis device can be opened or closed by a valve 313, and the amount of gas drawn into the analysis device 300 can be adjusted by a control unit for controlling the valve 313.

[0071] At this point, the conduit 310 is characterized in that, in order to prevent ions from depositing on the conduit 310 due to cooling as contaminants move to the analytical apparatus 300, the conduit 310 includes a heating element 312 for dissipating heat. By preventing ion deposition on the conduit 310, it has the effect of reducing analytical efficiency and memory usage. The heating element 312 and the conduit 310 are connected to a control unit, thereby controlling the temperature of the conduit to a set temperature. The present invention is not limited to the method of controlling the temperature of the conduit. For example, the heating element may be formed to surround the conduit, thereby transferring heat to the conduit; the conduit and the heating element may be connected using a workpiece and other components, and the temperature may be controlled by the temperature conducted to the workpiece.

[0072] In addition, this includes methods to deform the shape of the conduit to maintain a set temperature. A sleeve can be fitted around the conduit, and a heat source can be connected to the sleeve to heat the internal air, thereby controlling the temperature of the conduit.

[0073] The invention further includes a second sampling port (not shown) extending through the chamber. The second sampling port is a structure connecting the interior of the chamber and the analytical apparatus for detecting the degree of contamination within the chamber. An inert gas is supplied to the interior of the chamber, and the inert gas, along with the contaminants, is transferred to the analytical apparatus. Reliability can be improved by detecting the degree of contamination within the chamber before wafer analysis, and the precise amount of contaminants thermally desorbed from the wafer can be detected by measuring the amount of residual contaminants after wafer heating.

[0074] [2] Operation sequence diagram of the present invention

[0075] This invention includes an automation method utilizing the aforementioned TD analysis automation system.

[0076] The method includes: a wafer loading step, wherein the wafer transfer device inserts a wafer into the interior of the chamber and loads it onto one end of the lever pin through a preset action; a heating preparation step, wherein the drive unit moves the chuck to position the chuck close to the cover; a wafer heating step, wherein the wafer is heated by a heater disposed in the chamber to desorb contaminants; a sampling step, wherein the contaminants desorbed by heating are discharged through a sampling port disposed through the cover; and an analysis step, wherein the analysis device analyzes the sampled contaminants.

[0077] The wafer loading step involves loading a front-opening unified pod (FOUP) containing multiple wafers into a wafer transfer device (Equipment Front End Module, EFEM). The FOUP is a conventional structure for safely transferring silicon wafers in a controlled environment. The wafer transfer device loads wafers one by one into the FOUP. As a gate located outside the chamber is opened, the wafers are transferred into the chamber through wafer inlets / outlets. The wafers are loaded onto the upper end of a lever pin, and the wafer transfer device moves outside the chamber.

[0078] The heating preparation step is the step before heating the loaded wafer. The chuck moves up and down via a drive unit located on its outer surface, and through this movement, the wafer, located at one end of a lever pin, is positioned on the inner surface of the chuck.

[0079] At this time, a rod pin is provided through the chuck, and the end of the rod pin is formed such that its cross-sectional area is larger than the cross-sectional area of ​​the through hole of the chuck. By the movement of the moving part, the end of the rod pin blocks the through hole.

[0080] In the wafer heating step, heaters within the chamber operate to heat the wafer. The loaded wafer is heated by external radiant heat between a quartz chuck and a housing. Heating causes ions and organic matter on the wafer surface to vaporize and change phase to a gaseous state. The heaters are not limited to the top or bottom of the chamber; multiple heaters can be installed within the chamber. Although analytical results vary depending on the heating and holding times, optimal results are obtained when the average heating time is 15 to 20 minutes followed by a holding time of 10 to 20 minutes.

[0081] In the sampling step, contaminants desorbed by heating are transferred to the analytical apparatus through the sampling port. Inactive gases can be introduced through a gas port located within the chamber and transferred to the analytical apparatus under pressure; alternatively, the inactive gases can be transferred via a first vacuum pump connected to the analytical apparatus. Gas extraction is most effective when the sampling port penetrates the enclosure and is located at the top of the wafer.

[0082] Furthermore, the sampling step can be performed based on the presence or absence of a wafer within the chamber. Prior to the wafer loading step, a chamber contamination detection step is included to supply an inert gas into the chamber and detect the degree of contamination within the chamber. By detecting the degree of contamination within the chamber before wafer analysis, the reliability of the analysis can be improved.

[0083] In the event of an emergency during sampling, the control unit can supply or stop the supply of inactive gas. Emergency situations include leaks, overheating, and excessive contamination. In the event of a gas leak, the supply of inactive gas is interrupted; when the wafer overheats, inactive gas is supplied to cool the wafer.

[0084] In the analytical steps, the sampled pollutants are analyzed. As analytical methods, after capturing the pollutants in a solution, methods can be employed that utilize the chemical, physical, and electrical properties of the pollutants; methods that utilize the light absorption and light emission properties of the pollutants; methods that analyze the pollutants after ionization; and methods that analyze the pollutants after reacting with ionized substances.

[0085] This invention includes a wafer replacement step in which a wafer, after sampling is completed, is transferred to the outside of a chamber via a wafer transfer device, and another wafer is loaded. In the wafer replacement step, after heating and sampling of the wafer loaded in the chamber are completed, a drive unit lowers a chuck and positions the wafer at the upper end of a lever pin. The wafer positioned at the lever pin is transferred to the outside of the chamber via the drive device, and another wafer is loaded into the chamber.

[0086] In this case, conventional TD analysis systems, as described above, cool the wafer after completing the heating and analysis process. However, in this invention, the wafer is transferred by an automated system, eliminating the need for chamber cooling and thus shortening the required time.

[0087] Wafers transferred to the outside of the heating device via a wafer transfer device are transferred to the FOUP, whereby the wafers are cooled during the transfer process or after being transferred to a cooling device and cooled, and then loaded into the FOUP.

[0088] In the wafer replacement step, a gas exchange step is included to remove residual gas inside the chamber. During the gas exchange step, inert gas is supplied to the chamber after the wafer has been moved outside, with the gate closed and the chamber sealed. The inert gas is supplied through a gas port located inside the chamber, and the residual gas is discharged through an outlet formed on the bottom surface of the chamber. The outlet is connected to a trapping section for capturing solid or liquid particles in the gas, thus allowing it to be discharged externally after purification. Furthermore, the outlet is connected to a second vacuum pump, which periodically restores the interior of the chamber to its initial state using vacuum pressure.

[0089] That is, during normal operation and analysis, non-reactive gas is used for exhaust, and when cleaning is required, a second vacuum pump is used to rapidly exhaust the air inside the chamber.

[0090] This invention includes a chamber contamination detection step for detecting the degree of contamination inside a chamber. In the chamber contamination detection step, an inactive gas is supplied to the chamber, and the degree of contamination inside the chamber is detected through a second sampling port that runs through the chamber.

[0091] The detection of chamber contamination level is performed according to user requirements, regardless of the presence or absence of a wafer or the steps performed. The presence or absence of contaminants during wafer installation can be confirmed by detecting the contamination level of the chamber before and after wafer placement, and the amount of contaminants remaining in the chamber can be confirmed by detecting the contamination level before and after wafer heating.

[0092] This invention proposes a method for cooling a heated wafer. Regarding the heated wafer, an inert gas is supplied to the cavity during a venting step, thereby enabling simultaneous venting of the cavity and cooling of the heated wafer.

[0093] In addition, the wafer, which has been heated during the wafer replacement step, is moved to the outside of the chamber and left to cool naturally for a specified period of time.

[0094] In addition, the process includes a cooling step in which the heated wafer from the wafer replacement step is transferred to a cooling chamber located outside the chamber, and the wafer is cooled. During the cooling of the wafer, another wafer can be transferred into the heating device for analysis.

[0095] This invention is not limited to the above embodiments, but has a wide range of applications, and various modifications can be made without departing from the essential points of the invention as claimed in the claims.

[0096] Explanation of reference numerals in the attached figures

[0097] 100: Wafer transfer device

[0098] 200: Heating device

[0099] 210: Gate

[0100] 220: Chamber

[0101] 221: Chip Import / Export

[0102] 222: Gas Port

[0103] 230: Cover

[0104] 231: Connecting components

[0105] 240: Chuck

[0106] 241: Drive Unit

[0107] 242: Pole pin

[0108] 250: Heater

[0109] 260: Cooling components

[0110] 300: Analytical apparatus

[0111] 310: Catheter

[0112] 311: Sampling Port

[0113] 312: Fever Element

[0114] 313: Valves

[0115] 314: First Vacuum Pump

[0116] 400: Trapper

[0117] 410: Second vacuum pump

Claims

1. An automated system for capturing and analyzing pollutants by thermal desorption, comprising: The heating device includes a chamber that provides space for heating a wafer and a heater disposed inside the chamber for dissipating heat. An analytical device, connected to a sampling port and used to analyze contaminants drawn through the sampling port, wherein the sampling port is connected to the interior of the chamber; Forming an armed wafer transfer device; as well as The control unit controls the wafer transfer device to insert wafers into the cavity and transfer wafers from the cavity to the outside. Inside the chamber, the automated thermal desorption analysis system further includes: A cover, the cover being formed of a transparent material and having an internal sampling port connected to the analysis device; A chuck, formed of a transparent material, disposed opposite the cover, and configured to move up and down by a drive unit connected to the chamber; and A light sensor configured to detect the temperature of the wafer disposed between the housing and the chuck.

2. The automated thermal desorption analysis system according to claim 1, characterized in that, Includes a lever pin with one end formed between the cover and the chuck for wafer placement. The other end of the pin is configured to engage with the chuck or to pass through a through hole formed on the chuck and engage with or contact the inner surface of the chamber.

3. The automated thermal desorption analysis system according to claim 2, characterized in that, The lever pin is configured to pass through the chuck. The cross-sectional area of ​​the end of the pin that contacts the wafer is formed to be larger than the cross-sectional area of ​​the through hole, and the end blocks the through hole by the action of the chuck.

4. The automated thermal desorption analysis system according to claim 1, characterized in that, The drive unit is disposed through the cavity and is connected to and driven by an external device disposed outside the cavity.

5. The automated thermal desorption analysis system according to claim 1, characterized in that, The chamber includes cooling components embedded in the outer wall and disposed on the outer surface of the outer wall.

6. The automated thermal desorption analysis system according to claim 1, characterized in that, Also includes: A second sampling port, connected to the analysis device and arranged to penetrate the chamber. The automated thermal desorption analysis system is configured to: supply inactive gas into the chamber after the analyzed wafer is unloaded and before another wafer is loaded, and extract the inactive gas and the contaminants through a second sampling port arranged to penetrate the chamber to detect the degree of contamination inside the chamber.

7. The automated thermal desorption analysis system according to claim 1, characterized in that, One or more gas ports are provided between the cover and the chuck.

8. The automated thermal desorption analysis system according to claim 1, characterized in that, The sampling port is connected to the analysis device via a conduit. The conduit includes a heating element for dissipating heat. The heating element and the conduit are connected to the control unit, and the temperature of the conduit is controlled to a set temperature.

9. The automated thermal desorption analysis system according to claim 1, characterized in that, The analytical apparatus, after capturing pollutants using a solution, includes one or more of the following methods: a method for analyzing pollutants by utilizing their light absorption and light emission properties; a method for analyzing pollutants after ionization; and a method for analyzing pollutants after reacting with ionized substances.

10. An automated method for thermal desorption analysis using the automated thermal desorption analysis system of claim 2, comprising: Wafer loading step: The wafer transfer device inserts the wafer into the cavity and loads it onto one end of the lever pin through a preset action; Heating preparation step: The chuck is moved by the drive unit connected to the chamber to position the chuck close to the cover, wherein the cover is configured to be spaced apart from the inner surface of the chamber; Wafer heating step: The wafer is heated by a heater disposed in the chamber to desorb contaminants; Sampling steps: The pollutants desorbed by heating are discharged through the sampling port set through the cover; as well as Analysis steps: The sampled pollutants are analyzed by the analytical device. The automated thermal desorption analysis method further includes, after the analytical step, the following: The chamber contamination level detection procedure involves supplying an inactive gas into the chamber and drawing in the inactive gas and contaminants through a second sampling port arranged to penetrate the chamber, in order to detect the contamination level inside the chamber.

11. An automated method for thermal desorption analysis using the automated thermal desorption analysis system of claim 2, comprising: Wafer loading step: The wafer transfer device inserts the wafer into the cavity and loads it onto one end of the lever pin through a preset action; Heating preparation step: The chuck is moved by the drive unit connected to the chamber to position the chuck close to the cover, wherein the cover is configured to be spaced apart from the inner surface of the chamber; Wafer heating step: The wafer is heated by a heater disposed in the chamber to desorb contaminants; Sampling steps: The pollutants desorbed by heating are discharged through the sampling port set through the enclosure; and Analysis steps: The sampled pollutants are analyzed by the analytical device. In the wafer heating step, the optical sensor detects the temperature of the wafer in real time through the chuck or the cover, and controls the temperature of the heater based on the measured temperature of the wafer.

12. The automated method for thermal desorption analysis according to claim 11, characterized in that, Following the sampling step, a ventilation step is included, in which an inactive gas is supplied into the chamber and the internal gas is discharged through an outlet formed in the chamber.

13. The automated method for thermal desorption analysis according to claim 10 or 11, characterized in that, Following the analysis step, a wafer replacement step is included, in which the wafer after sampling is completed is moved to the outside of the chamber via a wafer transfer device and another wafer is loaded. The wafer replacement step includes a cooling step in which the heated wafer is moved to the outside of the chamber and left outside the chamber for a predetermined time to allow for natural cooling.

14. The automated method for thermal desorption analysis according to claim 10 or 11, characterized in that, Following the analysis step, a wafer replacement step is included, in which the wafer after sampling is completed is moved to the outside of the chamber via a wafer transfer device and another wafer is loaded. The wafer replacement step includes a cooling step in which the heated wafer is moved to a cooling chamber located outside the chamber, and during the cooling of the wafer, another wafer is moved into the interior of the heating device and analyzed.

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