A method for establishing a model of a high power electromagnetic pulse damage source

Abstract

The present application relates to a kind of method for establishing strong electromagnetic pulse damage source model, belong to the field of simulation circuit.The present application uses oscilloscope to record the time domain response data of different input state, different load value in HEMP damage circuit in test;The circuit framework of damage source model is built in simulation software, the initial value of each parameter in circuit is set, the same sampling initial data as test sampling parameter is set in simulation model, simulation model is run, and time domain response data is recorded;Simulation data and test data are compared, when the difference between two data is less than ±5%, it is considered that simulation model has been completed;When the data of two are inconsistent, the difference of rising time, peak value, half-wave width in response is compared, each parameter in damage source circuit is adjusted accordingly, and finally the difference between measured and simulated data is less than ±5%.The present application is simple, and the principle is clear and practical, and the simulation model of strong electromagnetic pulse damage source can be obtained.

Description

Technical Field

[0001] This invention belongs to the field of simulation circuits, specifically relating to a method for establishing a model of a strong electromagnetic pulse damage source. Background Technology

[0002] A strong electromagnetic pulse (ESP) is a sudden, high-intensity pulse with high transient power. It includes naturally occurring EMPs such as lightning electromagnetic pulses (LEMPs) and man-made EMPs such as high-altitude nuclear electromagnetic pulses (HEMPs) and ultra-wideband electromagnetic pulses (HPM-UWS). EMPs are characterized by a high rise time rate, high instantaneous power, and short duration, making them highly susceptible to coupling into various electronic devices and interfering with their normal operation. Computers operating in outdoor environments require EMP protection features in their design.

[0003] High-powered electromagnetic pulse (HMP) emissions are harmful to the human body and require enormous excitation capabilities; the damage caused by HMPs to circuits is generally irreversible. Therefore, HMP testing sites are demanding, expensive to build, and have high operating costs. Consequently, the design of HMP protection schemes typically involves steps such as damage threshold analysis, simulation model establishment, prototype construction, and damage testing verification. Among these, simulation model establishment is a crucial part of reducing design costs and shortening the verification cycle.

[0004] According to GJB8848 and MIL-STD-188-125-2 standards, the response of a strong electromagnetic pulse (ESP) in the injection state is a double exponential current (20ns / 500ns) with a rise time of 20ns and a full width at half maximum (FWHM) of 500ns. General simulation software includes various commonly used excitation sources and common circuit components in its component library, such as AC sources, DC sources, resistors, capacitors, and inductors, but does not include strong EMP sources. Current simulations of damaged circuits often use square waves to represent the damage source, resulting in significantly different results from reality and reducing the guiding significance of the simulation data.

[0005] Therefore, there is an urgent need for a method to establish a model of strong electromagnetic pulse (ESP) damage sources, so that during the simulation of EMP protection circuits, the correct EMP damage source can be obtained to verify the damage threshold and the damage protection effect. This invention is based on this practical need. Summary of the Invention

[0006] (a) Technical problems to be solved

[0007] The technical problem to be solved by this invention is how to provide a method for establishing a model of a strong electromagnetic pulse damage source, so as to solve the problem that the current damage circuit simulation often uses square waves to replace the damage source, the results of which differ greatly from reality, and the guiding significance of simulation data is reduced.

[0008] (II) Technical Solution

[0009] To address the aforementioned technical problems, this invention proposes a method for establishing a model of a strong electromagnetic pulse damage source, which includes the following steps:

[0010] S1. Test source sampling: As needed, build a test platform in the experimental environment. The test platform includes: a strong electromagnetic pulse damage source, a power supply, a load, a clamp, and an oscilloscope. Use the oscilloscope to record the time domain response data of the test platform under different power input states and different load values.

[0011] S2. Simulation Model Construction: Build a simulation model corresponding to the test platform in the simulation software platform. The strong electromagnetic pulse damage source is replaced by an equivalent circuit, and the initial values ​​of each parameter in the equivalent circuit are set.

[0012] S3. Simulation Model Sampling: Set the same initial sampling data as the sampling parameters in S1 in the simulation model, and record the time domain response data of the simulation model;

[0013] S4. Compare the sampling of the experimental source with the sampling of the simulation model: Compare the data in step S1 with the time domain response data in step S3. When the difference between the two data is less than ±5%, the simulation model is considered to have been established. When the two data are inconsistent, proceed to step S5.

[0014] S5. Debug the simulation model data: Compare the differences in the rise time, peak value, and half-wave width of the time domain response, and adjust the parameters of each device in the equivalent circuit accordingly. Then repeat steps S3 and S4 until the difference between the measured and simulated data is less than ±5%.

[0015] Further, step S1 specifically includes: setting up a test platform in the experimental environment. The test platform includes: a strong electromagnetic pulse damage source, a power supply, a load, a clamp, and an oscilloscope. Based on three load conditions—open circuit, short circuit, and 50Ω matching impedance—five different power supply input voltages of 100V, 200V, 300V, 400V, and 500V are set. Using the oscilloscope and clamp combination, the time-domain response data of different voltage input states and different load values ​​are recorded.

[0016] Furthermore, the time-domain response data is current data, including peak value, half-wave width, and rising edge.

[0017] Furthermore, one end of the power supply is connected to one end of the strong electromagnetic pulse damage source, and the other end of the strong electromagnetic pulse damage source is connected to one end of three loads: open circuit, short circuit, and 50Ω matching impedance. The other ends of the three loads are connected to the other end of the power supply. The points between the strong electromagnetic pulse damage source and the three loads are connected to an oscilloscope via clamps. The response current of the strong electromagnetic pulse damage source under the three load conditions of open circuit, short circuit, and 50Ω matching impedance is obtained using a current clamp.

[0018] Further, step S2 specifically includes: building a simulation model corresponding to the test platform in simulation software, wherein the strong electromagnetic pulse damage source is replaced by an equivalent circuit, including resistor R, capacitor C, inductor L and switch U, and setting the initial values ​​of each parameter in the equivalent circuit.

[0019] Furthermore, the capacitor C, switch U, inductor L, and resistor R are connected in series in sequence.

[0020] Furthermore, the sampling parameters in step S3 include: input and load parameters.

[0021] Furthermore, in step S4, the difference between the two data is less than ±5%, which means that the difference between the amplitude of the time-domain response waveform of the simulation model and the half-width at half maximum (WHM) and the measured time-domain response waveform is less than ±5%.

[0022] Furthermore, in step S5, the device parameters include: the resistance value of resistor R, the capacitance value of capacitor C, and the inductive reactance of inductor L.

[0023] Furthermore, in step S5, increasing the resistance value decreases both the peak value and the full width at half maximum (FWHM) of the response waveform; increasing the capacitance value increases both the FWHM and the peak value of the response waveform; increasing the inductance value increases the peak time and decreases the peak value of the response waveform. Based on these patterns, the RLC value in the equivalent circuit of the strong electromagnetic pulse damage source is adjusted accordingly, and steps S3 and S5 are repeated until the difference between the measured and simulated data is less than ±5%.

[0024] (III) Beneficial Effects

[0025] This invention proposes a method for establishing a high-energy electromagnetic pulse (HEMP) damage source model. This method borrows the SLOT calibration method, a common de-embedding technique in vector network analyzers, and anchors the model under three typical conditions: open circuit, short circuit, and 50Ω (matching impedance). The RLC value is adjusted to ensure that the measured circuit response matches the simulation model response, ultimately determining the simulation model architecture and RLC value. Specifically, during the simulation model establishment process, a current clamp is used to acquire the response current of the HEMP damage source under three load conditions: open circuit, short circuit, and 50Ω (matching impedance). Then, a simulation model framework for the damage source's transmitting circuit is established. By comparing the measured and simulated data, the component parameters in the simulation model are adjusted, resulting in a HEMP damage source model. This method has a clear principle, simple steps, and can obtain an accurate pulse damage source model, providing an accurate verification basis for subsequent protection circuit simulation models. Therefore, this invention will play an important role in HEMP protection design. Attached Figure Description

[0026] Figure 1 This is a flowchart of a method for establishing a strong electromagnetic pulse damage source model according to the present invention;

[0027] Figure 2 This is a schematic diagram of the short-circuit state test platform of the present invention;

[0028] Figure 3 This is a schematic diagram of the open-circuit test platform of the present invention;

[0029] Figure 4 This is a schematic diagram of the 50Ω load condition test platform of the present invention;

[0030] Figure 5 This is the equivalent circuit diagram of the strong electromagnetic pulse damage source of the present invention. Detailed Implementation

[0031] To make the objectives, contents, and advantages of the present invention clearer, the specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples.

[0032] This invention relates to a method for establishing a model of a strong electromagnetic pulse (EMI) damage source, and more specifically, to a method for establishing a circuit framework for an EMI damage source and determining its resistance-inductance-capacitance (RLC) values.

[0033] The purpose of this invention is to provide a method for establishing a strong electromagnetic pulse damage source model, which meets the requirements for establishing a strong electromagnetic pulse damage source circuit in a simulation software platform and clarifying the parameters of each device.

[0034] like Figure 1 As shown, to achieve the above objectives, this invention proposes a method for establishing a model of a strong electromagnetic pulse damage source, the method comprising:

[0035] S1. Test Source Sampling. As needed, a test platform is set up in the experimental environment. The test platform includes: a strong electromagnetic pulse damage source, a power supply, a load, calipers, and an oscilloscope. The oscilloscope is used to record the time-domain response data of the test platform under different power input states and different load values.

[0036] S2. Simulation Model Construction. A simulation model corresponding to the experimental platform is built in the simulation software platform. The strong electromagnetic pulse damage source is replaced by an equivalent circuit, and the initial values ​​of each parameter in the equivalent circuit are set.

[0037] S3. Simulation Model Sampling. Set the same initial sampling data as the sampling parameters in S1 in the simulation model, and record the time-domain response data of the simulation model.

[0038] S4. Compare the experimental source sampling with the simulation model sampling. Compare the data in step S1 with the time-domain response data in step S3. When the difference between the two data is less than ±5%, the simulation model is considered to have been established. When the two data are inconsistent, proceed to step S5.

[0039] S5. Debug the simulation model data. Compare the differences in rise time, peak value, and half-wave width of the time-domain response, and adjust the parameters of various components in the equivalent circuit accordingly. Repeat steps S3 and S4 until the difference between the measured and simulated data is less than ±5%.

[0040] Example 1:

[0041] Figure 1 This is a flowchart of a method for establishing a strong electromagnetic pulse damage source model according to the present invention. Figure 1 As shown, the method includes:

[0042] (1) Sample sampling of the test source. In the experimental environment, a test platform was set up, which included: a strong electromagnetic pulse damage source, a power supply, a load, a clamp and an oscilloscope. Based on three load conditions, namely open circuit, short circuit and 50Ω (matching impedance), five different power supply input voltages of 100V, 200V, 300V, 400V and 500V were set. Using the combination of oscilloscope and clamp, the time domain response data of different voltage input states and different load values ​​were recorded.

[0043] The time-domain response data is current data, including peak value, half-wave width, and rising edge.

[0044] like Figures 2-4This diagram illustrates the setup of a test platform for three load conditions: open circuit, short circuit, and 50Ω (matching impedance). The test platform includes a high-power electromagnetic pulse (HMP) damage source, a power supply, loads, clamps, and an oscilloscope. One end of the power supply is connected to one end of the HMP damage source, and the other end of the HMP damage source is connected to one end of each of the three load conditions (open circuit, short circuit, and 50Ω (matching impedance)). The other ends of each load are connected to the other end of the power supply. The points connecting the HMP damage source and each load are connected to the oscilloscope via clamps. The response current of the HMP damage source under the three load conditions (open circuit, short circuit, and 50Ω (matching impedance) is obtained using current clamps.

[0045] (2) Simulation Model Construction. A simulation model corresponding to the experimental platform is built in the simulation software. The strong electromagnetic pulse damage source is replaced by an equivalent circuit, including: a square wave source VtPulse, resistor R, capacitor C, and inductor L. Initial values ​​for each parameter in the equivalent circuit are set. For example... Figure 5 The diagram shows the equivalent circuit of a strong electromagnetic pulse (ESP) damage source in the simulation software. It includes SRC15, capacitor C6, inductor L4, and resistor R10, which are connected in series. The equivalent circuit also includes V_Probe, which is a voltmeter. Outside the EMP damage source, there are also ammeter I_Probe, voltmeter V_Probe, and resistor R9. Resistor R9 is used to simulate three types of loads: open circuit, short circuit, and 50Ω (matching impedance).

[0046] (3) Sampling using a simulation model. Set the same initial sampling data as the experimental platform sampling parameters in (1) in the simulation model, and record the time-domain response data of the simulation model. Sampling parameters include: input, load parameters, etc.

[0047] (4) Compare the experimental source sampling with the simulation model sampling. Compare the time-domain response data in step (1) with the time-domain response data in step (3). When the difference between the two data is less than ±5%, the simulation model is considered to have been established. When the two data are inconsistent, proceed to step (5). Here, the difference between the two data is less than ±5% mainly means that the amplitude of the time-domain response waveform of the simulation model is basically consistent with the full width at half maximum (FWHM) and the measured time-domain response waveform, with a difference of less than ±5%.

[0048] (5) Debugging the simulation model data. By comparing the differences in rise time, peak value, and half-wave width of the time-domain response, numerical stepwise changes are made to the device parameters in the equivalent circuit. The device parameters include the resistance value of resistor R, the capacitance value of capacitor C, and the inductive reactance of inductor L. The changes in the time-domain response in the simulation model are observed. The following rules are found: as the resistance value increases, the peak value and half-wave width of the response waveform decrease; as the capacitance value increases, the half-wave width and peak value of the response waveform increase; as the inductance value increases, the peak time of the response waveform increases and the peak value decreases.

[0049] Based on the above rules, adjust the RLC value in the equivalent circuit of the strong electromagnetic pulse damage source accordingly, and repeat steps (3) and (4) to finally achieve a difference of less than ±5% between the measured and simulated data.

[0050] This invention discloses a method for establishing a high electromagnetic pulse (HEMP) damage source model, which includes: (1) Experimental source sampling step. As needed, use an oscilloscope to record the time-domain response data of different input states and different load values ​​in the HEMP damage circuit. (2) Simulation model construction. Build the circuit framework of the damage source model in the simulation software and set the initial values ​​of each parameter in the circuit. (3) Simulation model sampling step. Set the same initial sampling data as the sampling parameters in step (1) in the simulation model, run the simulation model, and record the time-domain response data. (4) Compare experimental source sampling with simulation model sampling. Compare the data in step (1) with the data in step (3). When the difference between the two data is less than ±5%, the simulation model is considered to have been established. When the two data are inconsistent, compare the differences in response rise time, peak value, and half-wave width, and proceed to step (5). (5) Debug simulation model data. According to the differences in response rise time, peak value, and half-wave width obtained by comparison, adjust the parameters in the damage source circuit accordingly, and repeat steps (3) and (4) until the difference between the measured and simulated data is less than ±5%.

[0051] The present invention proposes a method for establishing a strong electromagnetic pulse damage source model. The steps are simple, the principle is clear and practical, and it can obtain a simulation model of the strong electromagnetic pulse damage source, providing a foundation for subsequent damage effect simulation of various types of application circuits in HEMP.

[0052] This method borrows the SLOT calibration method, a common de-embedding technique in vector network analyzers. It anchors the circuit to three typical states: open circuit, short circuit, and 50Ω (matching impedance). The RLC value is adjusted to ensure the measured circuit response matches the simulation model response, ultimately determining the simulation model architecture and RLC value. Specifically, during the simulation model building process, a current clamp is used to acquire the response current of the high-altitude nuclear electromagnetic pulse (HEMP) damage source under three load conditions: open circuit, short circuit, and 50Ω (matching impedance). Then, a simulation model framework for the damage source's transmitting circuit is established. By comparing the measured and simulated data, the component parameters in the simulation model are adjusted, resulting in a high-altitude nuclear electromagnetic pulse (HEMP) damage source model. This method has a clear principle, simple steps, and can obtain an accurate pulse damage source model, providing an accurate verification basis for subsequent protection circuit simulation models. Therefore, this invention will play an important role in high-altitude electromagnetic pulse protection design.

[0053] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for establishing a model of a strong electromagnetic pulse damage source, characterized in that, The method includes the following steps: S1. Test source sampling: As needed, build a test platform in the experimental environment. The test platform includes: a strong electromagnetic pulse damage source, a power supply, a load, a clamp, and an oscilloscope. Use the oscilloscope to record the time domain response data of the test platform under different power input states and different load values. S2. Simulation Model Construction: Build a simulation model corresponding to the test platform in the simulation software platform. The strong electromagnetic pulse damage source is replaced by an equivalent circuit, and the initial values ​​of each parameter in the equivalent circuit are set. S3. Simulation Model Sampling: Set the same initial sampling data as the sampling parameters in S1 in the simulation model, and record the time domain response data of the simulation model; S4. Compare the sampling of the experimental source with the sampling of the simulation model: Compare the data in step S1 with the time domain response data in step S3. When the difference between the two data is less than ±5%, the simulation model is considered to have been established. When the two data are inconsistent, proceed to step S5. S5. Debug the simulation model data: Compare the differences in rise time, peak value, and half-wave width of the time domain response, and adjust the parameters of various components in the equivalent circuit accordingly. Repeat steps S3 and S4 until the difference between the measured and simulated data is less than ±5%. in, Step S1 specifically includes: setting up a test platform in the experimental environment. The test platform includes: a strong electromagnetic pulse damage source, a power supply, a load, a clamp, and an oscilloscope. Based on three load conditions—open circuit, short circuit, and 50Ω matching impedance—five different power supply input voltages of 100V, 200V, 300V, 400V, and 500V are set. Using the oscilloscope and clamp combination, the time-domain response data of different voltage input states and different load values ​​are recorded. The time-domain response data is current data, including: peak value, half-wave width, and rising edge. One end of the power supply is connected to one end of the high electromagnetic pulse (EMI) damage source. The other end of the EMI damage source is connected to one end of three loads: open circuit, short circuit, and 50Ω matched impedance. The other ends of the three loads are connected to the other end of the power supply. The points between the EMI damage source and the three loads are connected to an oscilloscope using clamps. The response current of the EMI damage source under the three load conditions of open circuit, short circuit, and 50Ω matched impedance is obtained using current clamps. Step S2 specifically includes: building a simulation model corresponding to the test platform in the simulation software, wherein the strong electromagnetic pulse damage source is replaced by an equivalent circuit, including: a square wave source VtPulse, a resistor R, a capacitor C and an inductor L, setting the initial values ​​of each parameter in the equivalent circuit, and the equivalent circuit also includes V_Probe as a voltmeter, and an ammeter I_Probe, a voltmeter V_Probe and a resistor R9 are connected outside the strong electromagnetic pulse damage source. The resistor R9 is used to simulate three loads: open circuit, short circuit and 50Ω matching impedance. A square wave source VtPulse, a resistor R, a capacitor C, and an inductor L are connected in series in sequence. In step S5, the device parameters include: the resistance value of resistor R, the capacitance value of capacitor C, and the inductive reactance of inductor L. In step S5, increasing the resistance value decreases both the peak value and the full width at half maximum (FWHM) of the response waveform; increasing the capacitance value increases both the FWHM and the peak value of the response waveform; increasing the inductance value increases the peak time and decreases the peak value of the response waveform. Based on these rules, the RLC value in the equivalent circuit of the strong electromagnetic pulse damage source is adjusted accordingly, and steps S3 and S5 are repeated until the difference between the measured and simulated data is less than ±5%.

2. The method for establishing a strong electromagnetic pulse damage source model as described in claim 1, characterized in that, The sampling parameters in step S3 include: input and load parameters.

3. The method for establishing a strong electromagnetic pulse damage source model as described in claim 1, characterized in that, In step S4, the difference between the two data is less than ±5% means that the difference between the amplitude of the time-domain response waveform of the simulation model and the half-width at half-maximum and the measured time-domain response waveform is less than ±5%.

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