Radio frequency switch circuit, integrated circuit chip, and electronic device

Abstract

The application relates to a radio frequency switch circuit, an integrated circuit chip and an electronic device. The first inductor pair comprises a first inductor and a second inductor, the first end of the first inductor is connected with a first node, the second end of the first inductor is connected with the second end of the second inductor, the first end of the second inductor is connected with a second node, wherein the first inductor and the second inductor are arranged to be adjacent and generate opposite directions of induced magnetic fields; the first end of the first switch module is connected with the second end of the first inductor and the second end of the second inductor, the second end of the first switch module is connected with the first end of the first absorption circuit, and the second end of the first absorption circuit is grounded; the first absorption circuit comprises a first resistor and a first capacitor in parallel. Through the embodiment of the application, the chip area occupied by the radio frequency switch circuit can be small, and the chip cost is reduced.

Description

Technical Field

[0001] This application relates to the field of electronic circuit technology, and in particular to a radio frequency switch circuit, an integrated circuit chip, and an electronic device. Background Technology

[0002] Radio frequency (RF) switches are used to control the on / off state or select the path of RF signals. They are common devices in RF paths and have wide applications in many fields such as RF systems and electronic measuring instruments. With the expansion of RF system applications and the increase in the number of switches used, RF switches are developing towards higher integration, smaller size, and lower cost.

[0003] Most existing radio frequency (RF) switches or RF switch chips are based on switching transistors, lumped parameter elements such as inductors, capacitors, resistors, and microstrip lines. Among these components, inductors, microstrip lines, and capacitors generate electromagnetic radiation and other induced magnetic or electric fields due to signal excitation. These physical fields can affect the arrangement and normal operation of other components. In the design and manufacturing of RF switches or RF switch chips, existing methods to address electromagnetic compatibility (EMC) issues between components involve maintaining a large spacing between them. This results in larger RF switches or chips, hindering high-density integration and cost reduction. Furthermore, electromagnetic radiation and induced magnetic or electric fields cause energy loss, sacrificing the performance of the RF switches or chips. To achieve widespread adoption of high-frequency wireless communication technology, reducing component costs and improving component performance are urgent problems that need to be solved. Summary of the Invention

[0004] This application provides an embodiment of a radio frequency switch circuit, an integrated circuit chip, and an electronic device to provide a radio frequency switch circuit with a smaller size.

[0005] According to one aspect of this application, a radio frequency switching circuit is provided, comprising a first inductor pair, a first switching module, and a first absorption circuit, wherein:

[0006] The first inductor pair includes a first inductor and a second inductor. The first end of the first inductor is connected to the first node of the radio frequency switch circuit. The second end of the first inductor is connected to the second end of the second inductor. The first end of the second inductor is connected to the second node of the radio frequency switch circuit. The first inductor and the second inductor are arranged to be adjacent to each other and generate induced magnetic fields in opposite directions.

[0007] The first switching module is used to turn on or off under the control of a control signal. A first terminal of the first switching module is connected to a second terminal of a first inductor and a second terminal of a second inductor. A second terminal of the first switching module is connected to a first terminal of a first absorption circuit, and the second terminal of the first absorption circuit is grounded.

[0008] The first absorption circuit includes a first resistor and a first capacitor connected in parallel. The first end of the first resistor and the first end of the first capacitor are connected together to form the first end of the first absorption circuit, and the second end of the first resistor and the second end of the first capacitor are connected together to form the second end of the first absorption circuit.

[0009] According to another aspect of this application, a radio frequency (RF) switch circuit is provided, comprising a plurality of RF switch circuits as described above, wherein:

[0010] The first nodes of the multiple radio frequency switch circuits are connected to each other as a common node.

[0011] According to another aspect of this application, an integrated circuit chip is provided, which includes the radio frequency switching circuit described above.

[0012] According to another aspect of this application, an electronic device is provided, which includes the integrated circuit chip as described above.

[0013] The technical solutions provided by the embodiments of this application may include the following beneficial effects:

[0014] In various embodiments of this application, an inductor pair comprising two inductors is used in the radio frequency switch circuit, and the two inductors are arranged to be adjacent to each other and the induced magnetic fields they generate are in opposite directions. Such a radio frequency switch circuit has a simple structure and compact layout, and therefore occupies a small chip area.

[0015] It should be understood that the above general description and the following description are merely exemplary and do not limit this application. Attached Figure Description

[0016] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0017] Figure 1 A schematic diagram of a radio frequency switch circuit according to an embodiment of this application is shown;

[0018] Figure 2A and 2B Show Figure 1 The equivalent circuit diagram of the radio frequency switch circuit in the on state;

[0019] Figure 3A and 3B Show Figure 1 A schematic diagram of the equivalent circuit of the radio frequency switch circuit in the off state;

[0020] Figure 4 A schematic diagram of a radio frequency switch circuit according to another embodiment of this application is shown;

[0021] Figure 5A and 5B Show Figure 4 A schematic diagram of the equivalent circuit of the RF switch circuit in the on-state condition;

[0022] Figure 6A and 6B Show Figure 4 A schematic diagram of the equivalent circuit of the RF switch circuit in the off state;

[0023] Figure 7 A schematic diagram of a radio frequency switch circuit according to yet another embodiment of this application is shown;

[0024] Figure 8 Show Figure 7 A schematic diagram of the equivalent circuit of the first channel of the RF switch circuit when it is in the on state;

[0025] Figure 9 This diagram shows a schematic representation of a switch module according to an embodiment of the present application.

[0026] Figure 10 A schematic diagram of the structure of a switch module according to another embodiment of this application is shown;

[0027] Figure 11 This invention provides a schematic diagram of the structure of a switch module according to yet another embodiment of the present application.

[0028] Figure 12 This invention provides a schematic diagram of the structure of a switch module according to yet another embodiment of the present application.

[0029] Figure 13 This invention provides a schematic diagram of the structure of a switch module according to yet another embodiment of the present application.

[0030] Figure 14 A schematic diagram of the arrangement of inductor pairs according to an embodiment of this application is shown;

[0031] Figure 15 A schematic diagram of an integrated circuit chip according to an embodiment of this application is shown;

[0032] Figure 16 A schematic diagram of an electronic device according to an embodiment of this application is shown. Detailed Implementation

[0033] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses and methods consistent with some aspects of this application as detailed in the appended claims.

[0034] Figure 1 This is a schematic diagram of a radio frequency switch circuit 100 according to an embodiment of this application. Figure 1 As shown, in this embodiment, the radio frequency switch circuit 100 includes a first inductor pair 110, a first switch module 105, and a first absorption circuit 130. The first inductor pair 110 includes a first inductor 103 and a second inductor 104. The first end 1031 of the first inductor 103 is connected to the first node 101 of the radio frequency switch circuit 100, the second end 1032 of the first inductor 103 is connected to the second end 1042 of the second inductor 104, and the first end 1041 of the second inductor 104 is connected to the second node 102 of the radio frequency switch circuit 100.

[0035] The first switch module 105 is used to turn on or off under the control of a control signal. Its first terminal 1051 is connected to the second terminal 1032 of the first inductor 103 and the second terminal 1042 of the second inductor 104. Its second terminal 1052 is connected to the first terminal 1301 of the first absorption circuit 130. The second terminal 1302 of the first absorption circuit 130 is grounded.

[0036] The first absorption circuit 130 includes a first resistor 106 and a first capacitor 107 connected in parallel. The first end of the first resistor 106 and the first end of the first capacitor 107 are connected together as the first end 1301 of the first absorption circuit 130, and the second end of the first resistor 106 and the second end of the first capacitor 107 are connected together as the second end 1302 of the first absorption circuit 130.

[0037] The first inductor 103 and the second inductor 104 of the first inductor pair 130 can be arranged to be adjacent to each other and to generate induced magnetic fields in opposite directions, so as to make the layout compact and reduce the circuit size.

[0038] In RF switch circuit embodiments employing inductor pairs, the placement of the inductor pairs significantly impacts the circuit size. When an inductor is excited by a signal, it generates an induced magnetic field, which in turn generates an induced electric field. This induced electric field then emits radiation, resulting in energy loss. For example, the induced electric field can induce eddy currents in the circuit dielectric and electromagnetic radiation in space. If two inductors are placed close together, mutual coupling occurs between them, exacerbating this loss. Embodiments of this application at least partially reduce mutual coupling between the two inductors by configuring their induced magnetic fields to be opposite in direction. This ensures that the induced electric fields caused by the induced magnetic fields of the two inductors are also opposite in direction, thus partially or completely canceling each other out. This mitigates or eliminates the energy loss caused by the induced electric field, allowing the two inductors of the inductor pair to be placed closer together, further reducing the chip area occupied by the RF switch circuit.

[0039] For example, the first inductor 103 and the second inductor 104 of the first inductor pair can be configured to be adjacent to each other and such that the direction of the induced magnetic field generated by the first inductor 103 is opposite to the direction of the induced magnetic field generated by the second inductor 104.

[0040] In one example, both the first inductor 103 and the second inductor 104 are spiral inductors, which can be arranged in the RF switching circuit with opposite spiral directions. For example, one inductor has a clockwise spiral direction and the other has a counterclockwise spiral direction.

[0041] In one example, the first inductor 103 and the second inductor 104 are arranged as mirror images of each other in the RF switching circuit.

[0042] Figure 14 A schematic diagram of the arrangement of inductor pairs in a radio frequency switching circuit 100 according to an embodiment of this application is shown. Figure 14 This is a schematic diagram of the inductor pairs of the RF switch circuit 100 viewed from a direction perpendicular to the wiring layer of the RF switch circuit. In one example, the RF switch circuit can be an integrated circuit chip.

[0043] like Figure 14 As shown, inductor pair 1400 includes two inductors, each composed of a first microstrip line 1410 and a second microstrip line 1420. The first microstrip line 1410 is wound into a first helical pattern S1, and the second microstrip line 1420 is wound into a second helical pattern S2. The first end 1401 and the second end 1402 of the first microstrip line 1410 serve as the first and second ends of the first inductor, respectively. The first end 1403 and the second end 1402 of the second microstrip line 1420 serve as the first and second ends of the second inductor, respectively. The second ends 1402 of the first microstrip line 1410 and the second end 1402 of the second microstrip line 1420 are connected together to form a common terminal 1402 of the first and second inductors, thus forming a merged microstrip line. The first end 1401 of the first inductor, the first end 1403 of the second inductor, and the second ends 1402 of the first and second inductors are connected to other parts of the RF switching circuit via connecting wires.

[0044] The merged microstrip line (first / second microstrip line) of this application embodiment can be constructed from a single layer or multiple layers of metal material. In one example, the merged microstrip line is constructed from multiple layers of metal material, wherein each layer of metal material is located in a different wiring layer of the RF switching circuit. The multiple layers of metal material located in different wiring layers are stacked together to form the merged microstrip line, and the layers of metal material are connected to each other through interlayer vias. In another example, the merged microstrip line is constructed from a single layer of metal material, which can be located in the same or different wiring layers of the RF switching circuit. For example, a portion of the single layer of metal material is located in one wiring layer, and other portions are located in one or more different wiring layers. Similarly, the single layers of metal material located in different wiring layers are connected to each other through vias.

[0045] exist Figure 14 In the example, both spiral patterns S1 and S2 include multiple turns. It is understood that they may also each include one turn, or one may include multiple turns while the other includes multiple turns.

[0046] As an example, the first microstrip line 1410 and the second microstrip line 1420 can be wound in opposite directions, such that the helical directions of the first helical pattern S1 and the second helical pattern S2 are opposite. This results in the induced magnetic fields caused by the currents in the microstrip lines forming the two helical patterns S1 and S2 being in opposite directions when the inductor pair is in operation. For example, one of S1 and S2 can be helical in a counter-clockwise direction, and the other in a clockwise direction. Here, the direction from the first end of the first or second inductor to the common end can be referred to as the helical direction, or the direction from the common end to the first end of the first or second inductor can also be referred to as the helical direction.

[0047] exist Figure 14 In this embodiment, the first microstrip line 1410 is wound from the first end 1401 to the common end 1402 in a counterclockwise direction, forming a first spiral pattern S1, from the inside out (inner turns first, then outer turns). Similarly, the second microstrip line 1420 is wound from the first end 1403 to the common end 1402 in a clockwise direction, forming a second spiral pattern S2, from the inside out (inner turns first, then outer turns). It is understood that one can be wound from the inside out and the other from the outside in (outer turns first, then inner turns), or both can be wound from the outside in. It is also understood that when winding the microstrip lines into spiral patterns S1 or S2, it is not necessary to always follow the inside-out or outside-in direction; the direction can be changed once or multiple times. For example, it can start from the inside out and then change to the outside-in direction midway, or vice versa.

[0048] In summary, each spiral pattern in S1 and S2 can wind the microstrip line from its respective first end to the common end in one of the following ways:

[0049] From the inside out;

[0050] From the outside in;

[0051] The combination of the two above.

[0052] exist Figure 14 In one embodiment, the two spiral patterns S1 and S2 do not overlap and are adjacent but spaced a certain distance D in a direction parallel to the wiring layer of the RF switch circuit. In this embodiment, as described above, due to the low mutual coupling between the two inductors, the two spiral patterns S1 and S2 can be arranged as close as possible (but without overlapping), thereby reducing circuit size and cost. In one example, the spacing between the two spiral patterns S1 and S2 (e.g., ...) is... Figure 14 The distance D shown can be as small as approximately 3 micrometers. The "spacing between two spiral patterns" mentioned here refers to the distance between the closest microstrip lines of the two spiral patterns. For example... Figure 14 As shown, distance D is the distance between the outermost adjacent turns of S1 and S2. In practice, the minimum spacing between the two spiral patterns is determined by the chip manufacturing process.

[0053] exist Figure 14 In the example, the first microstrip line 1410 and the second microstrip line 1420 are of equal length. That is, the common terminal 1402 is located at the midpoint of the merged microstrip line. It is understood that the common terminal 1402 may not be located at the midpoint of the merged microstrip line, but at other locations, such as closer to S1 or S2.

[0054] like Figure 14 As shown, in this embodiment, the spiral patterns S1 and S2 are arranged in a mirror image; they are mirror images of each other. Figure 14 The spiral patterns S1 and S2 are arranged symmetrically. That is, they have the same configuration, such as the same number of turns, microstrip linewidth, and spacing between adjacent turns, but their patterns are reversed (the winding methods are opposite). They are symmetrical / mirror images of each other about a plane perpendicular to the wiring layer located between them. S1 and S2 can also be arranged differently; for example, they can have different numbers of turns, microstrip linewidths, or spacing between adjacent turns, as long as the induced magnetic fields of the spiral patterns S1 and S2 are in opposite directions.

[0055] Understandable, Figure 14 The arrangement of the first spiral pattern S1 and the second spiral pattern S2 can be interchanged.

[0056] In the inductor pair according to the above embodiments of this application, the microstrip lines of the two inductors have a common terminal and are arranged as two helical patterns with opposite helical directions. When an excitation signal is applied to the inductor pair in the working state, the excitation signal is shunt at the common terminal to the two helices (the microstrip lines of the two inductors), so that the induced magnetic fields generated by the current in the two helices are opposite in direction, thereby at least partially reducing the mutual coupling / mutual inductance between the two inductors.

[0057] In the inductor pair embodiments described above, such as Figure 14 As shown, the inductor pair in the integrated circuit chip is arranged with three terminals: a common terminal 1402, a first terminal 1401 serving as the first branch terminal of the inductor pair, and a second terminal 1403 serving as the second branch terminal of the inductor pair. As mentioned earlier, these three terminals of the inductor pair can be connected to an excitation signal or other circuit components via leads. For example, an RF excitation signal can be input from the common terminal 1402 of the inductor pair, and the RF excitation signal is shunt at the common terminal 1402 to the first microstrip line (first inductor) and the second microstrip line (second inductor). The RF excitation signal is generally a periodically changing signal, such as a sinusoidal signal. Assume that the excitation signal input at the common terminal 1402 is i. com =I com The excitation signal splits into two branches at the common terminal 1402. One branch flows through the common terminal 1402 to the first spiral pattern S1 at the first branch end (head end) 1401, and the other branch flows through the common terminal 1402 to the second spiral pattern S2 at the second branch end (tail end) 1403. Assuming the excitation signal in the first spiral pattern S1 is i1(t) and the excitation signal in the first spiral pattern S1 is i2(t), and assuming no signal reflection, then i1(t) + i2(t) = I. com • sinωt. If the common terminal is located at the midpoint of the merged microstrip line, and S1 and S2 are axisymmetric patterns, then the excitation signals in S1 and S2 are exactly the same at any time, i.e. In an inductor pair, the excitation signals i1(t) and i2(t) are periodically changing signals, and their current magnitudes vary periodically and non-uniformly. Therefore, the induced magnetic field generated is also periodically and non-uniformly changing. This changing magnetic field then generates an electric field, which in turn produces electromagnetic waves. When the excitation signals in S1 and S2 are identical, since the helical directions of S1 and S2 are opposite, the induced magnetic field generated by S1 at any given time is the same in magnitude and opposite in direction to that generated by S2. The corresponding induced electric field also has opposite directions and periodically changes direction. Therefore, the induced magnetic fields generated by S1 and S2 almost completely cancel each other out in many regions and partially cancel each other out in some regions. Consequently, the corresponding electric field or electromagnetic wave caused by the induced magnetic field also cancels out, thus reducing the losses of the inductor pair.

[0058] If the common terminal is not located at the midpoint of the merged microstrip line, or if S1 and S2 have different configurations, it may not be guaranteed that the excitation signals in S1 and S2 are exactly the same. Therefore, the degree to which the induced magnetic fields of S1 and S2 cancel each other out is weaker compared to the case where the excitation signals in S1 and S2 are exactly the same. However, at any given moment, the induced magnetic fields generated by S1 and S2 will still partially cancel each other out and weaken the electromagnetic radiation intensity, thereby reducing the loss of the inductor pair to a certain extent.

[0059] It should be noted that, theoretically, the inductor pair with three ports (common terminal, the first branch terminal of the merged microstrip line, and the second branch terminal of the merged microstrip line) as described above is a passive lossless network. Since passive networks are reciprocal, the loss and transmission characteristics of the inductor pair are reciprocal regardless of which of the three ports the excitation signal is input from.

[0060] The first inductor pair 110, consisting of the first inductor 103 and the second inductor 104 in the RF switch circuit 100, can be arranged as described above. The above description of inductor pairs applies to all inductor pairs mentioned herein, and for the sake of brevity, it will not be repeated elsewhere in this document.

[0061] In the above or below description, for ease of explanation, the two ends of devices or modules such as inductors, switching modules, capacitors or resistors are referred to as the first end and the second end, respectively. It is understood that such naming is only to distinguish their two ends. Either end of these devices or modules can be referred to as the first end and the other end as the second end.

[0062] In this embodiment, the RF switch circuit 100 is a single-pole single-throw switch. The first switch module 105 is turned on or off under the control of its control signal, thereby turning off or on the channel between the first node 101 and the second node 102. The first switch module 105 in the RF switch circuit 100 of this embodiment can be any suitable switch module, such that when the first switch module 105 is off, the channel between the first node 101 and the second node 102 is on, and when the first switch module 105 is on, the channel between the first node 101 and the second node 102 is off. In one embodiment, the first switch module 105 may include a transistor switch device, with a first terminal of the transistor switch device serving as the first terminal 1051 of the first switch module 105, and a second terminal of the transistor switch device serving as the second terminal 1052 of the first switch module 105. That is, in this embodiment, the first terminal of the transistor switch device is connected to the second terminal 1032 of the first inductor 103 and the second terminal 1042 of the second inductor 104, and the second terminal 1052 of the transistor switch device is connected to the first absorption circuit 130. The transistor switching device is turned on or off under the control of a control signal to control the opening or closing of the channel between the first node 101 and the second node 102. The control signal is connected to the control terminal of the transistor switching device. In another embodiment, in addition to the transistor switching device, the first switching module 105 may also include an AC blocking device, one end of which is connected to the control signal of the transistor switching device, and the other end is connected to the control terminal of the transistor switching device to isolate the signal terminal of the transistor switching device from the control signal source. The following describes the process in conjunction with... Figure 9 This section illustrates an example of the structural composition that the first switch module 105 can adopt.

[0063] Figure 9 A schematic diagram of a switch module 900 according to an embodiment of this application is shown. Figure 9 As shown, the switching module 900 includes an AC suppression device 141 and a transistor switching device 142. In this embodiment, the AC suppression device 141 includes a resistor R1, and the transistor switching device 142 includes a transistor T1. One end of the resistor R1 is connected to the control signal of the switching module 900, and the other end is connected to the control terminal of the transistor T1. The transistor T1 also has two other ends, which serve as the first terminal 901 and the second terminal 902 of the switching module 900, respectively. The transistor T1 is turned on or off according to the control signal, thereby forming the on or off state of the switching module 900. In one example, when the control signal is high, the transistor T1 is on, and the switching module 900 can be equivalent to a resistor with very small impedance; when the control signal is low, the transistor T1 is off, and the switching module 900 can be equivalent to a capacitor.

[0064] Here, "high level" refers to the voltage range that allows the transistor to conduct, such as 0V, 4V, etc.; "low level" refers to the voltage range that allows the transistor to turn off, such as -4V, etc. It's understandable that although this example illustrates a transistor conducting at a high level and turning off at a low level, the transistor's operating mode can also be that it turns off when the control signal is high and turns on when the control signal is low. For example, Figure 13 The control logic of the switch module shown can be changed by swapping the input voltages of the reference voltage port and the control voltage port.

[0065] When the switch module 900 is used as the first switch module 105 in the RF switch circuit 100, the second terminal 902 of the switch module 900 is connected to the first terminal 1301 of the first absorption circuit 130. The first terminal 901 is connected to the second terminals 1032 and 1042 of the first inductor 103 and the second inductor 104, respectively. Figure 1 The radio frequency switch circuit 100. As described above, when the control signal is low, the transistor T1 of the first switch module 105 is turned off, and the first switch module 105 is in the off state. At this time, the first switch module 105 can be equivalent to a capacitor with a small capacitance value. Figure 2A and 2B A schematic diagram of the equivalent circuit 200 of the RF switch circuit 100 in this case is shown. (As shown) Figure 2A As shown, when the first switch module 105 is in the off state, it is equivalent to capacitor 201. One end of capacitor 201 is connected to the RC parallel circuit that forms the first absorption circuit 130, and the other end is connected to the first inductor 103 and the second inductor 104. Since the capacitance of capacitor 201 is relatively small, capacitor 201 and the first absorption circuit 130 can be considered together as a single capacitor 201' with a relatively small capacitance. Figure 2B As shown, in this case, the channel between the first node 101 and the second node 102 is equivalent to a T-shaped low-pass network and is in a conducting state. That is, when the first switch module 105 is in the off state under the control of the control signal, the channel between the first node 101 and the second node 102 is in a conducting state.

[0066] Furthermore, when the control signal is high, the transistor T1 of the first switch module 105 is turned on, and the first switch module 105 is in the on state. As mentioned above, at this time, the first switch module 105 is equivalent to a resistor with very small impedance. Figure 3A and 3BA schematic diagram of the equivalent circuit 300 of the RF switch circuit 100 in this case is shown. As shown in Figure 3, when the first switch module 105 is in the on state, it is equivalent to a resistor 301 with very small impedance. One end of the resistor 301 is connected to the RC parallel circuit of the first absorption circuit 130, and the other end is connected to the first inductor 103 and the second inductor 104. Figure 3 also shows the first node-side resistor 302 and the second node-side resistor 303 when there is a load on both sides of the first node 101 and the second node 102 of the RF switch circuit 100. Since the resistor 301 is very small, it can be ignored (e.g., ...). Figure 3B (as shown), therefore Figure 3A The circuit is equivalent to Figure 3B .exist Figure 3B In this context, resistor 301 is negligible, and the first capacitor 107 can be considered as two parallel capacitors 107' and 107" where the parallel capacitance of capacitors 107' and 107" is equal to the capacitance of the first capacitor 107. The first node-side resistor 302 and the second node-side resistor 303 serve as ideal impedances characterizing the circuit connecting the two ends when the RF switch unit is used, and are only used for the principle explanation of the RF switch unit in this application.

[0067] In this embodiment, the first inductor 103, the second inductor 104, and the first capacitor 107 are configured such that when the first switch module 105 is in the ON state, the first node 101 and the second node 102 are in a lossy matching state. That is, by setting the inductance values ​​of the first inductor 103 and the second inductor 104, and the capacitance value of the first capacitor 107, signals from either the first node 101 or the second node 102 are absorbed by the first resistor 106 and are not reflected or transmitted to either node. Therefore, in this case, the channel between the first node 101 and the second node 102 is in the OFF state. In other words, when the first switch module 105 is in the ON state under the control of the control signal, the channel between the first node 101 and the second node 102 is in the OFF state. Therefore, the RF switch circuit 100 is an absorption-type switch circuit.

[0068] It should be understood that any control signal / voltage mentioned herein can be a single control signal / voltage, or it can be a shared / common control signal / voltage in any combination. It should also be understood that any electrical grounding mentioned herein can be a single grounding connection / node, or it can be a shared / common grounding node in any combination (grounding can also refer to relative grounding, floating grounding, or some desired potential difference).

[0069] Figure 9 The switch module 900 shown is merely one example of the structural configuration that the first switch module 105 can take. It is understood that the first switch module 105 can take other suitable forms. Figure 10-13 Other embodiments of the structural configuration that the first switch module 105 can adopt are shown.

[0070] Figure 10 A schematic diagram of the structure of a switch module 1000 according to another embodiment of this application is shown. Figure 10 As shown, the switching module 1000 also includes an AC suppression device 141 and a transistor switching device 142. (The last sentence appears to be incomplete and possibly contains errors.) Figure 9 The difference in this embodiment is that the AC suppression device 141 is an inductor L1, rather than a resistor R1. Other parts of this embodiment are the same as... Figure 9 The embodiments are the same, and their component connections and working principles are also the same. Figure 9 The embodiments are the same and will not be repeated here. Similarly, when the control signal is high, transistor T1 is turned on, and the switching module 1000 can be equivalent to a resistor with very small impedance; when the control signal is low, transistor T1 is turned off, and the switching module 1000 can be equivalent to a capacitor with a small capacitance. When used in the RF switching circuit 100, the working principle and equivalent circuit diagram of the RF switching circuit are the same as in the aforementioned embodiments and will not be repeated here.

[0071] Figure 11 A schematic diagram of a switching module 1100 according to another embodiment of this application is shown. In this embodiment, in addition to the AC suppression device 141 and the transistor switching device 142, the switching module 1100 also includes an inductor L2. The AC suppression device 141 is a resistor R1, the transistor switching device 142 is a transistor T1, and the inductor L2 is connected in parallel with it. The two ends of the inductor L2 are respectively connected to the other two ends of the transistor T1 except for the control terminal. When the transistor T1 is in the off state under the action of the control signal, the transistor T1 is equivalent to its internal parasitic capacitance, thereby forming an LC parallel resonant circuit with the inductor L2, generating a large impedance, enhancing the isolation of the switching module, and reducing the loss of the RF switching circuit. Conversely, when the transistor T1 is turned on under the action of the control signal, the inductor L2 and the parasitic impedance in the transistor T1 form a parallel impedance network, reducing the on-resistance of the switching module and enhancing the isolation of the RF switching circuit. Figure 9 The parts that are the same as in the previous embodiment will not be described again here. Similarly, when the control signal is high, transistor T1 is turned on, and the switching module 1100 can be equivalent to a resistor with very small impedance; when the control signal is low, transistor T1 is turned off, and the switching module 1100 can be equivalent to a resistor with a very large resistance (generated by the parasitic capacitance and the parallel resonance of L2). When used in the RF switching circuit 100, the working principle and equivalent circuit diagram of the RF switching circuit are the same as in the previous embodiment, and will not be described again here.

[0072] Figure 12A schematic diagram of a switching module 1200 according to another embodiment of this application is shown. In this embodiment, the transistor switching device 142 can be composed of m×n transistors, i.e., as shown below. Figure 12 The transistors T11, ..., Tnm are shown, and the AC suppression device 141 can be a resistor divider network. These m×n transistors can be arranged in an array, for example, in m columns and n rows, where m is an integer greater than or equal to 1, n is an integer greater than or equal to 1, and m and n are not both 1. In the array arrangement, the transistors in each column are connected in series, the control terminal of each row of transistors is connected to the AC suppression device 141, and the second terminals of the transistors in the first row are connected to the second terminal 902 of the switching module 1200, the first terminals of the transistors in the nth row are connected to the first terminal 901 of the switching module 1200, and the two terminals of the other transistors in each column are connected in series. The resistor divider network 141 provides the input control signal to each row of transistors to control the on or off state of each transistor. In one example, the on-state voltage of each row of transistors is the same.

[0073] The terms "first terminal" and "second terminal" of a transistor as used in this article refer to the two terminals of a transistor other than the control terminal. They are referred to as "first terminal" and "second terminal" respectively for the purpose of differentiation. It should be understood that either terminal of the transistor other than the control terminal can be called the "first terminal," and the other terminal the "second terminal." For example, when the three terminals of a transistor are gate, source, and drain, the control terminal can be the gate, the first terminal can be either the source or the drain, and the second terminal is the other terminal.

[0074] exist Figure 12 In the embodiment, the voltage withstand capability of the transistor switching device can be improved by connecting n-level transistors in series, and the current conduction capability of the transistor switching device 142 can be enhanced by connecting m-column transistors in parallel, thereby improving the switching power of the switching module 1200. Thus, the RF switching circuit using the switching module of this embodiment can be applied to high-power switching products, greatly expanding the application range of the RF switching circuit.

[0075] Similarly, when the control signal is high, transistors T11, ..., Tnm are turned on, and the switching module 1200 can be equivalent to a resistor with very low impedance. When the control signal is low, transistors T11, ..., Tnm are turned off, and the switching module 1200 can be equivalent to a capacitor. When used in the RF switching circuit 100, the working principle and equivalent circuit diagram of the RF switching circuit are the same as in the aforementioned embodiments, and will not be repeated here.

[0076] Figure 13 This illustration shows a structural schematic diagram of a switch module 1300 according to yet another embodiment of this application. Figure 9-12The parts that are the same as in the previous embodiments will not be repeated here; only the differences will be described below. Figure 13 As shown, the switch module 1300 includes a transistor T1, a first AC blocking device 141_1, a second AC blocking device 141_2, a third AC blocking device 141_3, a first capacitor C1, and a second capacitor C2. The first terminal of the first AC suppression device 141_1 serves as the first control signal terminal, and the second terminal of the first AC suppression device 141_1 is connected to the control terminal of the transistor T1; one end of the first capacitor C1 is connected to the first terminal of the transistor T1, and the other end of the first capacitor C1 serves as the first terminal 901 of the switch module 1300; one end of the second AC suppression device 141_2 is connected between the first terminal of the transistor T1 and the first capacitor C1, and the other end of the second AC suppression device 141_2 serves as the second control signal terminal; one end of the second capacitor C2 is connected to the second terminal of the transistor T1, and the other end of the second capacitor C2 serves as the second terminal 902 of the switch module 1300; one end of the third AC suppression device 141_3 is connected between the second terminal of the transistor T1 and the second capacitor C2, and the other end of the third AC suppression device 141_3 is connected to the second control signal terminal; wherein, one of the first control signal terminal and the second control signal terminal is connected to a control signal, and the other is connected to a reference level.

[0077] When the first control signal terminal is connected to a control signal, the second control signal terminal is connected to a reference level; when the first control signal terminal is connected to a reference level, the second control signal terminal is connected to a control signal.

[0078] When the second control signal terminal is connected to the reference level, the reference level is set to high level. In this case, when the first control signal terminal is connected to the low level control signal, the transistor T1 is turned off, that is, the switch module 1300 is turned off; when the first control signal terminal is connected to the high level control signal, the transistor T1 is turned on, that is, the switch module 1300 is turned on.

[0079] When the first control signal terminal is connected to the reference level, the reference level is set to low level. In this case, when the second control signal terminal is connected to a low level control signal, the transistor T1 is turned on, that is, the switch module 1300 is turned on. When the second control signal terminal is connected to a high level control signal, the transistor T1 is turned off, that is, the switch module 1300 is turned off.

[0080] Figure 13 When transistor T1 is turned on, the switching module 1300 can be equivalent to a resistor with very low impedance; when transistor T1 is turned off, the switching module 1300 can be equivalent to a capacitor.

[0081] The above illustrates Figure 13 The switch module 1300 shown can switch its control logic by configuring a reference signal, which facilitates the application of the switch and its integration with other functions.

[0082] The self-resonant frequencies of the first capacitor C1 and the second capacitor C2 are close to the center frequency of the operating frequency band of the switching module 1300, and are mainly used for DC blocking between the two ends of transistor T1 in the switching module 1300 and the two ends of the switching module 1300; the first AC blocking device 141_1, the second AC blocking device 141_2 or the second AC blocking device 141_3 can be any one of AC blocking resistor, AC blocking inductor or other AC blocking network.

[0083] When used in the RF switch circuit 100, the working principle and equivalent circuit diagram of the RF switch circuit are the same as those in the aforementioned embodiments, and will not be repeated here.

[0084] In one example, the transistors in the above switching module embodiments can be CMOS (Complementary Metal-Oxide-Semiconductor) devices, especially silicon-based CMOS, such as silicon-based NMOS or silicon-based PMOS. In another example, the transistors can be Bi-CMOS, especially germanium-silicon Bi-CMOS. In yet another example, the transistors can be HEMTs (High Electron Mobility Transistors), such as gallium arsenide pHEMTs (Pseudo-High Electron Mobility Transistors), indium phosphide pHEMTs, or gallium nitride HEMTs.

[0085] In the switching module embodiments 900, 1000, 1100, 1200, and 1300 described above, each transistor is shown and described as a three-terminal device (e.g., a transistor is a bipolar junction transistor, a field-effect transistor, etc.). However, it should be understood that each transistor may also be a two-terminal device (e.g., a diode, a PIN diode, etc.) or a combination of two-terminal devices with other devices, such as a combination of a diode or PIN diode with a capacitor (e.g., a capacitor). Figure 13 In this case, the transistor T1 can be regarded as a diode or a PIN diode. In this case, the control terminal of the transistor and one of the two ends of the diode are actually one end, that is, one end of the diode is used as the control signal input terminal at the same time, and the other end is connected to the reference voltage terminal.

[0086] The switch module embodiments 900, 1000, 1100, 1200, and 1300 described above are merely illustrative examples. It is understood that the switch modules included in the RF switch circuit embodiments of this application can adopt other suitable structural compositions. Regardless of the form adopted, when the switch module is equivalent to a resistor and capacitor with very small impedance when it is turned on and off, respectively, the equivalent circuit of the above-described RF switch circuit 100 is as follows: Figure 2Aand 2B Both 3A and 3B are applicable, and the working principle and effect of the RF switch circuit 100 are also the same.

[0087] Figure 4 This is a schematic diagram of a radio frequency switch circuit 100 according to another embodiment of this application. The radio frequency switch circuit 100 is also a single-pole single-throw switch, which is similar to... Figure 1 The difference in the RF switch circuit in this embodiment is that it also includes a second switch module 108 and a second absorption circuit 160. The second switch module 108 is used to turn on or off together with the first switch module 105 under the control of the same control signal as the first switch module 105. Its first terminal 1081 is connected to the second node 102 of the RF switch circuit 100, and its second terminal 1082 is connected to the first terminal 1601 of the second absorption circuit 160. The second terminal 1602 of the second absorption circuit 160 is grounded.

[0088] Figure 4 The first inductor 103, the second inductor 104, and the first switch module 105, as well as their connection relationships, etc. Figure 1 The implementation methods are the same; please refer to the preceding examples for details. Figure 1 The details of the process will not be repeated here.

[0089] Similar to the first switch module 105, the second switch module 108 can also be any suitable switch module. The first switch module 105 and the second switch module 108 can be the same or different. In one example, the second switch module 108 may also include a transistor switching device; in another example, it may also include an AC blocking device. The preceding description of the structural composition of the first switch module 105 and references... Figure 9-13 The description of the example embodiment of the switching module also applies to the second switching module 108, and will not be repeated here. Similarly, when the transistor of the second switching module 108 is turned on, the second switching module 108 is in the on state, and at this time it is equivalent to a resistor with a very small impedance; when the transistor of the second switching module 108 is turned off, the second switching module 108 is in the off state, and at this time it is equivalent to a capacitor with a small capacitance. Figure 9 , Figure 10 , Figure 12-13 The equivalent circuit of the switch module shown) or a resistor with a larger equivalent resistance ( Figure 11 The equivalent circuit of the switch module shown.

[0090] In one embodiment, when the control signal is low, the first switch module 105 and the second switch module 108 are both in the off state because the control signals are the same, and at this time they are equivalent to capacitors with small capacitance values. Figure 5A and 5B This situation is shown. Figure 4A schematic diagram of the equivalent circuit 400 of the RF switch circuit 100, wherein, Figure 5B yes Figure 5A A simplified structure. For example... Figure 5A and 5B As shown, when the first switch module 105 and the second switch module 108 are in the off state, they are equivalent to capacitors 201 and 502, respectively. One end of capacitor 201 is connected to the RC parallel circuit of the first absorption circuit 130, and the other end is connected to the first inductor 103 and the second inductor 104. One end of capacitor 502 is connected to the RC parallel circuit of the second absorption circuit 160, and the other end is connected to the second node 102. Since the capacitance values ​​of capacitors 201 and 502 are small, capacitor 201 and the first absorption circuit 130 can be considered together as a capacitor 201' with a small capacitance value, and capacitor 502 and the second absorption circuit 160 can be considered together as a capacitor 502' with a small capacitance value. Figure 5B As shown. Figure 5B As shown, in this configuration, the first inductor 103 and capacitor 201, and the second inductor 104 and capacitor 502 form a two-stage LC low-pass filter network. It is evident that the channel between the first node 101 and the second node 102 is in a conducting state under this configuration. That is, when the first switch module 105 and the second switch module 108 are in a closed state under the control of the control signal, the channel between the first node 101 and the second node 102 is in a conducting state.

[0091] In addition, when the control signal is high, the first switch module 105 and the second switch module 108 are both in the on state, and at this time they are equivalent to a resistor with very small impedance. Figure 6A and 6B This situation is shown. Figure 4 A schematic diagram of the equivalent circuit 600 of the RF switch circuit 100, wherein, Figure 6B yes Figure 6A A simplified structure. For example... Figure 6A and 6B As shown, when the first switch module 105 is in the ON state, it is equivalent to resistor 301. One end of resistor 301 is connected to the RC parallel circuit of the first absorption circuit 130, and the other end is connected to the first inductor 103 and the second inductor 104. When the second switch module 108 is in the ON state, it is equivalent to resistor 601. One end of resistor 601 is connected to the RC parallel circuit of the second absorption circuit 160, and the other end is connected to the first inductor 103 and the second inductor 104. Figure 6A and 6B The first node-side resistor 302 and the second node-side resistor 303 are also shown. Since resistors 301 and 601 are very small, they can be ignored (e.g., ...). Figure 6B (as shown), therefore Figure 6AThe circuit is equivalent to Figure 6B .exist Figure 6B In this diagram, resistors 301 and 601 are negligible. The first capacitor 107 can be considered as two parallel capacitors 107' and 107" and the second capacitor 111 can be considered as two parallel capacitors 111' and 111" and the parallel capacitance of capacitors 107' and 107" is equal to the capacitance of the first capacitor 107 and the parallel capacitance of capacitors 111' and 111" is equal to the capacitance of the second capacitor 111.

[0092] In this embodiment, the first inductor 103, the second inductor 104, the first capacitor 107, and the second capacitor 111 are configured such that when the first switch module 105 is in the ON state, the first node 101 and the second node 102 are in a lossy matching state. That is, by setting the inductance values ​​of the first inductor 103 and the second inductor 104, and the capacitance values ​​of the first capacitor 107 and the second capacitor 111, signals from the first node 101 or the second node 102 are essentially absorbed by the first resistor 106 or the second resistor 109, and are not reflected or transmitted to the two nodes. Therefore, in this case, the channel between the first node 101 and the second node 102 is in the OFF state. In other words, when the first switch module 105 and the second switch module 108 are in the ON state under the control of the control signal, the channel between the first node 101 and the second node 102 is in the OFF state.

[0093] As described above, multiple RF switch circuits can be combined for use. Figure 7 Such an embodiment is shown. Figure 7 As shown, the RF switch circuit 600 includes a plurality of RF switch circuits 100-1, ..., 100-n, where n is greater than or equal to 2. Each of these plurality of RF switch circuits 100-1, ..., 100-n can be a previously referenced... Figure 1 Any embodiment of the RF switch circuit 100 described in section -6 will not be repeated here. As previously mentioned, each of the RF switch circuits 100-1, ..., 100-n has a first node and a second node, each of which is turned on or off under the control of a corresponding control signal. In the RF switch circuit 600, the first nodes of the RF switch circuits 100-1, ..., 100-n are connected together as a common node 101, opposite to which are n second nodes 102-1, ..., 102-n. In one example, the corresponding control signals of the RF switch circuits 100-1, ..., 100-n are configured such that only one of these RF switch circuits is turned on at any given time, thereby making the RF switch circuit 600 a single-pole multi-throw switch. For example, these control signals can be set so that only one is low at any given time, while the others are high. For example, when n is 2, the two control signals can be set as inverse signals.

[0094] Understandably, these control signals can also be configured to allow multiple RF switch circuits to be turned on at the same time.

[0095] In one example, the RF switch circuit 600 also includes a capacitor 116, such as Figure 7 As shown, this is to achieve better impedance matching. One end of capacitor 116 is connected to the common node 101, and the other end is grounded.

[0096] Figure 8 A schematic diagram of the equivalent circuit 700 of the RF switch circuit 600 as a single-pole multiple-throw switch is shown. In this embodiment, it is assumed that the corresponding control signals of the RF switch circuits 100-1, ..., 100-n cause the channel of the RF switch circuit 100-1 to be in the on state and the other channels to be in the off state. That is, the channel between the common node 101 and the second node 102-1 is on, and the channel between the common node 101 and the other second nodes is off. It is assumed that the 1-n RF switch circuits 100-1, ..., 100-n are all... Figure 1 The structure of the RF switch circuit 100 shown is illustrated. In this case, the first switching module of the first RF switch circuit 100-1 is in an off state under the control of its control signal, and can be equivalent to a capacitor with a small capacitance value. This capacitor is connected to the first absorption circuit of the first RF switch circuit 100-1. As mentioned above, this equivalent capacitor, together with the first absorption circuit, can be regarded as a capacitor with a small capacitance value, such as... Figure 8 The capacitor 201'-1 in the circuit. The first switching modules of the other RF switching circuits (the 2nd to nth RF switching circuits) are in the on state under the control of their respective control signals, and can be equivalent to resistors with small impedances. As mentioned earlier, the impedance of these resistors is very small, therefore in Figure 8 These are ignored. Furthermore, similar to the equivalent circuit of RF switch circuit 100, the capacitors in the first absorption circuits of the 2nd to nth RF switch circuits 100-2, ..., 100-n can be considered as two parallel capacitors with smaller capacitance values ​​(e.g., ...). Figure 8 In the nth RF switch circuit 100-n, capacitors 107'-n and 107”-n) are, for example Figure 8 As shown. By Figure 8It can be seen that the first RF switch circuit 100-1 is in the ON state, meaning the channel between the first node 101 and the second node 102-1 is conductive. As for the other 2 to n RF switch circuits 100-2, ..., 100-n, as mentioned earlier, by configuring the inductance values ​​of the corresponding inductor pairs in these circuits and the capacitance value in the first absorption circuit, signals input from the common node 101 or the corresponding second node can be absorbed by the resistor in the first absorption circuit, without being reflected or transmitted to the common node or the corresponding second node. That is, these channels are in the OFF state. Furthermore, given that the basic functions of the RF switch circuit 600 can be achieved, in order to reduce the loss of the conduction channel and improve the isolation of the shutdown channel, by optimizing the inductance value of the inductor pair in the RF switch circuit and the capacitance value of the capacitor and the resistance value of the corresponding first absorption circuit, the proportion of signals absorbed by the corresponding first resistor in the RF switch circuit in the shutdown state in all shutdown channels from the common node or the corresponding second node can be made very small. This allows most of the signal to be transmitted in the conduction channel, increasing the proportion of signal amplitude propagation in the conduction channel and improving the propagation efficiency of the switch, thereby achieving the aforementioned objective.

[0097] Figure 8 The example in the text only shows the RF switch circuit for each channel. Figure 1 As can be understood from the embodiments shown, the RF switch circuit for each channel is different from other embodiments (e.g., Figure 4 The situation in the embodiments is similar and will not be described again here.

[0098] In the above-described embodiments of the RF switch circuit, one or more inductor pairs are used, which gives the RF switch circuit of this application the following advantages:

[0099] On the one hand, the use of inductor pairs simplifies the circuit structure of this application (e.g., eliminating the need for devices such as λ / 4 wavelength microstrip line impedance converters), facilitating compact layout to reduce circuit size and cost. On the other hand, by arranging the two inductors forming the inductor pair adjacent to each other, the circuit size can be significantly reduced.

[0100] On the other hand, as mentioned above, in some embodiments of this application, by configuring the two inductors forming the inductor pair such that their respective induced magnetic fields are in opposite directions, the inductor pair is made a low-coupling inductor pair, which can reduce the losses of the RF switching circuit. Furthermore, since the coupling between the two inductors forming the inductor pair can be reduced in this way, the two inductors can be arranged closer together, further reducing the circuit size. In addition, due to the reduced losses, the quality factor of the inductors is improved, which can further improve the isolation of the circuit in the off state.

[0101] This application also provides an integrated circuit chip including the radio frequency switching circuit described above, and an electronic device including such an integrated circuit chip. Figure 15 and Figure 16 Schematic diagrams of each are shown. For example... Figure 15 As shown, the integrated circuit chip 1500 may include a radio frequency (RF) switch circuit 1501, wherein the RF switch circuit 1501 may be any embodiment of the RF switch circuit described above. A single RF switch circuit 1501 may be used, or multiple RF switch circuits 1501 may be combined. In one example, the integrated circuit chip 1500 may include one or more RF switch circuits 1501.

[0102] Integrated circuit chips, including those in the RF switch circuit embodiments of this application, can be used in electronic devices. For example... Figure 16 As shown, the electronic device 1600 includes, as Figure 15 The integrated circuit chip 1500 is shown. The electronic device 1600 can be a wireless device or any other electronic device that can use radio frequency switching circuitry.

[0103] Wireless devices can be user equipment (UE), mobile stations, terminals, access terminals, subscriber units, base stations, etc. Wireless devices can also be cellular phones, smartphones, tablets, wireless modems, personal digital assistants (PDAs), handheld devices, laptops, smartbooks, netbooks, cordless phones, wireless local loop (WLL) stations, Bluetooth devices, etc. Wireless devices can communicate with wireless communication systems or receive signals from broadcast stations, signals from one or more satellites, etc. Wireless devices can support one or more wireless communication technologies (e.g., 5G, LTE, CDMA2000, WCDMA, TD-SCDMA, GSM, 802.11, millimeter wave, etc.).

[0104] Those skilled in the art will understand that information and signals can be represented or processed using any of a variety of different technologies and processes. For example, the data, instructions, commands, information, signals, bits, symbols, and chips that may be referenced throughout the above description can be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, light fields or optical particles, or any combination thereof. It should also be noted that the type and technology of transistors can be replaced, rearranged, or otherwise modified to achieve the same result. For example, a circuit shown using a PMOS transistor can be modified to use an NMOS transistor, and vice versa. Therefore, the amplifiers disclosed herein can be implemented using a variety of transistor types and technologies, and are not limited to the transistor types and technologies shown in the accompanying drawings. For example, transistor types such as BJTs, GaAs, MOSFETs, or any other transistor technology can be used.

[0105] It should be noted that in this article, relational terms such as “first” and “second” are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0106] Unless the context otherwise indicates, throughout the specification and claims, the words “comprising,” “including,” etc., shall be interpreted broadly as inclusive rather than exclusive or exhaustive; that is, meaning “including but not limited to.” Conditional language used herein, such as “may,” “for example,” etc., unless specifically stated or otherwise understood according to the context, is generally intended to indicate that some embodiments include, while others do not, certain features, elements, and / or states. Furthermore, the words “this article,” “above,” “below,” and words of similar significance, when used in this application, should refer to the entire application and not any particular part thereof. Where the context permits, the use of singular or plural forms of words in the above detailed description may also include the plural or singular, respectively.

[0107] It should be understood that this application is not limited to the precise structures described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.

Claims

1. A radio frequency switching circuit, characterized in that, It includes a first inductor pair, a first switching module, and a first absorption circuit, wherein: The first inductor pair includes a first inductor and a second inductor. The first end of the first inductor is connected to the first node of the radio frequency switch circuit. The second end of the first inductor is connected to the second end of the second inductor. The first end of the second inductor is connected to the second node of the radio frequency switch circuit. The first inductor and the second inductor are arranged to be adjacent to each other and generate induced magnetic fields in opposite directions. The first switching module is used to turn on or off under the control of a control signal. A first terminal of the first switching module is connected to a second terminal of a first inductor and a second terminal of a second inductor. A second terminal of the first switching module is connected to a first terminal of a first absorption circuit, and the second terminal of the first absorption circuit is grounded. The first absorption circuit includes a first resistor and a first capacitor connected in parallel. The first end of the first resistor and the first end of the first capacitor are connected together to form the first end of the first absorption circuit, and the second end of the first resistor and the second end of the first capacitor are connected together to form the second end of the first absorption circuit.

2. The radio frequency switching circuit according to claim 1, characterized in that, When the first switch module is turned on under the control of the control signal, the channel between the first node and the second node is closed; when the first switch module is turned off under the control of the control signal, the channel between the first node and the second node is open.

3. The radio frequency switching circuit according to claim 1, characterized in that, It also includes a second switching module and a second absorption circuit, wherein: The first terminal of the second switching module is connected to the second node of the radio frequency switching circuit, the second terminal of the second switching module is connected to the first terminal of the second absorption circuit, and the second terminal of the second absorption circuit is grounded. The second switch module is used to turn on or off together with the first switch module under the control of the control signal.

4. The radio frequency switching circuit according to claim 1, characterized in that, The first switching module includes a transistor switching device, wherein a first end of the transistor switching device serves as a first end of the first switching module, and a second end of the transistor switching device serves as a second end of the first switching module.

5. The radio frequency switching circuit according to claim 3, characterized in that, The second switching module includes a transistor switching device, wherein the first end of the transistor switching device serves as the first end of the second switching module, and the second end of the transistor switching device serves as the second end of the second switching module.

6. The radio frequency switching circuit according to claim 4 or 5, characterized in that, The first or second switching module further includes an AC blocking device, the first end of which is connected to the control signal, and the second end of which is connected to the control terminal of the transistor switching device.

7. The radio frequency switching circuit according to claim 6, characterized in that, The AC suppression device is a resistor, and the transistor switching device is a transistor.

8. The radio frequency switching circuit according to claim 6, characterized in that, The AC suppression device is an inductor, and the transistor switching device is a transistor.

9. The radio frequency switching circuit according to claim 6, characterized in that, The AC suppression device is a resistor, the transistor switching device is a transistor, and the first or second switching module further includes an inductor, wherein the first end of the resistor is connected to the first or second control signal, the second end of the resistor is connected to the control terminal of the transistor, and the two ends of the inductor are respectively connected to the first and second ends of the transistor.

10. The radio frequency switching circuit according to claim 6, characterized in that, The AC suppression device is a resistor voltage divider network, and the transistor switching device includes a transistor array composed of multiple transistors arranged in m columns and n rows, where m is an integer greater than or equal to 1 and n is an integer greater than 1. The control terminal of each row of transistors in the n rows is connected to the resistor voltage divider network. The second terminals of the transistors in the first row of the n rows are connected to the second terminal of the first or second switching module, and the first terminals of the transistors in the last row of the n rows are connected to the first terminal of the first or second switching module. The two ends of each column of transistors in the m columns are connected in series. The resistor voltage divider network is used to provide the first or second control signal to each row of transistors respectively.

11. The radio frequency switching circuit according to claim 3, characterized in that, The first or second switching module includes: a transistor, a first AC blocking device, a second AC blocking device, a third AC blocking device, a first capacitor, and a second capacitor, wherein: The first terminal of the first AC suppression device serves as the first control signal terminal, and the second terminal of the first AC suppression device is connected to the control terminal of the transistor. One end of the first capacitor is connected to the first end of the transistor, and the other end of the first capacitor serves as the first end of the first or second switching module. One end of the second AC blocking device is connected between the first end of the transistor and the first capacitor, and the other end of the second AC blocking device serves as the second control signal end. One end of the second capacitor is connected to the second end of the transistor, and the other end of the second capacitor serves as the second end of the first or second switching module. One end of the third AC blocking device is connected between the second end of the transistor and the second capacitor, and the other end of the third AC blocking device is connected to the second control signal terminal. In this configuration, one of the first control signal terminal and the second control signal terminal is connected to the control signal, and the other is connected to the reference level.

12. The radio frequency switching circuit according to any one of claims 1-5, characterized in that, Both the first and second inductors are spiral inductors and are arranged in opposite spiral directions in the radio frequency switching circuit.

13. The radio frequency switching circuit according to any one of claims 1-5, characterized in that, The first inductor and the second inductor are arranged as mirror images of each other in the radio frequency switching circuit.

14. The radio frequency switching circuit according to any one of claims 1-5, characterized in that, The first inductor is composed of a first microstrip line wound into a first spiral pattern, and the second inductor is composed of a second microstrip line wound into a second spiral pattern. The first end and the second end of the first microstrip line serve as the first end and the second end of the first inductor, respectively, and the first end and the second end of the second microstrip line serve as the first end and the second end of the second inductor, respectively. The second end of the first microstrip line and the second end of the second microstrip line are connected together to form a merged microstrip line.

15. The radio frequency switching circuit according to claim 14, characterized in that, The first and second spiral patterns do not overlap and are adjacent but spaced apart in a direction parallel to the wiring layer of the RF switch circuit.

16. The radio frequency switching circuit according to claim 14, characterized in that, The merged microstrip line is composed of multiple layers of metal material, wherein each layer of metal material is located in a different wiring layer of the radio frequency switch circuit.

17. The radio frequency switching circuit according to claim 14, characterized in that, The merged microstrip line is made of a single layer of metal material, wherein the single layer of metal material is located in the same or different wiring layers of the radio frequency switching circuit.

18. A radio frequency switch, characterized in that, Includes multiple radio frequency switching circuits as described in any one of claims 1-17, wherein: The first nodes of the multiple radio frequency switch circuits are connected to each other as a common node.

19. The radio frequency switch according to claim 18, characterized in that, The corresponding control signals of the plurality of radio frequency switch circuits are configured such that only one of the plurality of radio frequency switch circuits is turned on at any given time.

20. The radio frequency switch according to claim 18 or 19, characterized in that, It also includes a capacitor, one end of which is connected to the common node and the other end of which is grounded.

21. An integrated circuit chip, characterized in that, Includes the radio frequency switch circuit as described in any one of claims 1-17, or includes the radio frequency switch as described in any one of claims 18-20.

22. An electronic device, characterized in that, Including the integrated circuit chip as described in claim 21.

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