Method for manufacturing a magnetic random access memory and magnetic random access memory

Abstract

The application provides a manufacturing method of a magnetic random memory and the magnetic random memory. The method comprises the following steps: providing a substrate; sequentially forming a plurality of structure layers on the exposed surface of the substrate, wherein the structure layers comprise a groove and an MTJ film layer in the groove, the sidewalls of any two adjacent MTJ film layers are not in the same plane, and the plurality of MTJ film layers corresponding to the plurality of structure layers comprise, from the direction far away from the substrate, at least a reference layer, a tunneling layer and a free layer. In the method, the MTJ film layers are formed in layers, and the sidewalls of the MTJ film layers are not in the same plane, so that the different MTJ film layers are in a state of being blocked and discontinuous in the lateral space, thereby solving the problem that the boundary short circuit is prone to occurring in the MTJ preparation process in the prior art.

Claims

1. A method for manufacturing a magnetic random access memory, characterized in that, The production method includes: Provide a base; Multiple structural layers are sequentially formed on the exposed surface of the substrate. Each structural layer includes a structural layer body, a trench located in the structural layer body, and an MTJ film layer located in the trench. The sidewalls of any two adjacent MTJ film layers are not on the same plane. The multiple MTJ film layers corresponding to the multiple structural layers sequentially include at least a reference layer, a tunneling layer, and a free layer from the direction away from the substrate.

2. The manufacturing method according to claim 1, characterized in that, Multiple structural layers are sequentially formed on the exposed surface of the substrate, including: First formation step: Forming a preliminary structural layer, the preliminary structural layer being located on the exposed surface of the currently formed structure and including at least a preliminary barrier layer; Removal step: Remove a portion of the pre-structured layer to form the trench; Second formation step: Forming an MTJ film layer in the trench to form the structural layer; The first forming step, the removal step, and the second forming step are repeated at least once in sequence until multiple structural layers are formed.

3. The manufacturing method according to claim 2, characterized in that, Forming a pre-structured layer includes: The preparatory barrier layer and the preparatory medium layer are formed sequentially.

4. The manufacturing method according to claim 3, characterized in that, Removing a portion of the pre-structured layer to form the trench includes: The trench is formed by sequentially removing portions of the preparative medium layer and the preparative barrier layer.

5. The manufacturing method according to claim 3, characterized in that, Forming one of the MTJ film layers in the trench includes: A pre-MTJ film layer is formed in the trench, and the surface of the pre-MTJ film layer in the trench away from the substrate is lower than the pre-barrier layer; The remaining preparative dielectric layer, a portion of the preparative barrier layer, and a portion of the preparative MTJ film layer are removed, the remaining preparative barrier layer forms a barrier layer, and the remaining preparative MTJ film layer forms the MTJ film layer, with the exposed surfaces of the barrier layer and the MTJ film layer on the same plane.

6. The manufacturing method according to claim 1, characterized in that, The substrate includes a first insulating dielectric layer and a bottom electrode located in the first insulating dielectric layer. After forming multiple structural layers sequentially on the exposed surface of the substrate, the fabrication method further includes: A top electrode is formed on the side of the MTJ film away from the substrate.

7. The manufacturing method according to claim 6, characterized in that, After sequentially forming multiple structural layers on the exposed surface of the substrate, and before forming a top electrode on the side of the MTJ film layer away from the substrate, the fabrication method further includes: A protective layer is formed on the side of the MTJ film layer away from the substrate.

8. The manufacturing method according to claim 6, characterized in that, The formation process of the substrate also includes: A connecting electrode is formed on the surface of the first insulating dielectric layer, and the connecting electrode is in contact with the bottom electrode; A second insulating dielectric layer is formed on the surface of the first insulating dielectric layer, and the connecting electrode is located in the second insulating dielectric layer.

9. The manufacturing method according to any one of claims 1 to 8, characterized in that, The key dimensions of the multiple MTJ film layers corresponding to the multiple structural layers increase sequentially from the direction away from the substrate.

10. A magnetic random access memory, characterized in that, include: A substrate, the substrate comprising a first insulating dielectric layer and a bottom electrode located in the first insulating dielectric layer; Multiple structural layers are located on the surface of the substrate. Each structural layer includes a structural layer body, a trench located in the structural layer body, and an MTJ membrane layer located in the trench. The sidewalls of any two adjacent MTJ membrane layers are not on the same plane. The multiple MTJ membrane layers corresponding to the multiple structural layers sequentially include at least a reference layer, a tunneling layer, and a free layer from the direction away from the substrate. The top electrode is located on the side of the MTJ film away from the substrate.

11. The magnetic random access memory according to claim 10, characterized in that, The substrate also includes: The second insulating dielectric layer is located on the surface of the first insulating dielectric layer near the MTJ film layer; A connecting electrode is located in the second insulating dielectric layer, and the connecting electrode is in contact with the bottom electrode.

12. The magnetic random access memory according to claim 10, characterized in that, The key dimensions of the multiple MTJ film layers corresponding to the multiple structural layers increase sequentially from the direction away from the substrate.

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