Improved isolator for processing chamber

Abstract

Apparatuses and methods for reducing undesirable deposition and buildup of residual materials on one or more surfaces within a processing chamber are provided herein. In embodiments disclosed herein, a processing chamber includes a chamber body having a chamber base, one or more sidewalls, and a chamber lid that define a processing volume; a showerhead disposed in the chamber lid and having a bottom surface adjacent to the processing volume; and an isolator disposed between the chamber lid and the one or more sidewalls. The isolator includes a first end that contacts the showerhead; a second end opposite the first end; an angled inner wall connected to the first end and extending radially outward from the first end toward the second end; and a lower inner wall at a different angle than the angled inner wall. The first end and the angled inner wall of the isolator form a first angle that is less than 90°.

Description

[0001] background

[0002] field

[0003] The embodiments described herein generally relate to the field of semiconductor device manufacturing, and more specifically, to isolators for chemical vapor deposition (CVD) chambers with improved flow. Background Technology

[0004] Deposition processes such as chemical vapor deposition (CVD) and plasma-enhanced CVD (PECVD) are commonly used in semiconductor device fabrication to deposit material layers by reacting one or more gaseous precursors or their activators with or on a substrate surface. Gaseous precursors typically include one or both of gaseous and vapor-phase precursors.

[0005] Unfortunately, gaseous precursors and their reaction byproducts undesirably deposit material (referred to herein as residual material) on the surfaces of the walls and other components within the processing volume of the processing chamber. Typically, the thickness of the residual material deposit increases with each substrate processed. Thick residual material deposits eventually slough off the processing chamber surfaces, resulting in undesirable particulate contamination within the processing volume, negatively impacting the quality of the material layer deposited on the substrate. Therefore, CVD and PECVD processing chambers should be cleaned periodically to remove residual material. Typically, chamber cleaning includes periodic cleaning cycles between substrate processing operations and one or both of opening the chamber for cleaning and periodic maintenance, both of which result in lower substrate throughput and increased chamber downtime (time unavailable for substrate processing), thus causing a loss of processing chamber productivity.

[0006] Therefore, there is a need in the art for apparatus and methods for preventing the desired deposition of unreacted precursors and their reaction byproducts on the surfaces of the processing volume of a processing chamber. Summary of the Invention

[0007] The embodiments disclosed herein generally relate to an isolator for a chemical vapor deposition (CVD) chamber that improves the flow of process gas, and more specifically, to an isolator that reduces low flow rates of process gas near the nozzle and reduces the deposition of unwanted residual material on the nozzle.

[0008] In at least one embodiment, the processing chamber includes a chamber body having a chamber base defining a processing volume, one or more sidewalls, and a chamber cover; a nozzle disposed in the chamber cover and having a bottom surface adjacent to the processing volume; and an isolator disposed between the chamber cover and one or more sidewalls. The isolator includes: a first end contacting the nozzle; a second end opposite the first end; and an inclined inner wall connected to the first end and extending radially outward from the first end toward the second end. The first end of the isolator and the inclined inner wall form a first angle of less than 90°. The isolator includes a lower inner wall connected to the inclined inner wall and extending toward the second end at a different angle than the inclined inner wall.

[0009] In at least one embodiment, the processing chamber includes a chamber body having a chamber base defining a processing volume, one or more sidewalls, and a chamber cover. The processing chamber includes a nozzle disposed within the chamber cover and having a bottom surface adjacent to the processing volume, a substrate support disposed within the processing volume, and an isolator disposed between the chamber cover and one or more sidewalls. The isolator includes a first end contacting the nozzle, a second end opposite the first end, an inclined inner wall connected to the first end and extending radially outward from the first end toward the second end, a tapered inner wall connected to the second end and extending radially inward from the second end toward the first end, and a flat inner wall connecting the inclined inner wall to the tapered inner wall.

[0010] In at least one embodiment, an isolator for a processing chamber includes an annular body. The annular body has: a first end; a second end opposite to the first end; an inclined inner wall connected to the first end and extending radially outward from the first end toward the second end; a tapered inner wall connected to the second end and extending radially inward from the second end toward the first end; and a flat inner wall connecting the inclined inner wall to the tapered inner wall.

[0011] In at least one embodiment, the processing chamber includes a chamber body having a chamber base defining a processing volume, one or more sidewalls and a chamber cover, and a nozzle disposed within the chamber cover. The nozzle includes a bottom surface adjacent to the processing volume; a plurality of openings disposed through the bottom surface; and a flat, unperforated area radially outward surrounding the plurality of openings. The processing chamber includes an isolator disposed between the chamber cover and one or more sidewalls. The radial width of the flat area, measured within the inner radial edge of the isolator, is less than about 11.1 mm. Attached Figure Description

[0012] To gain a more detailed understanding of the features described above, a more specific description of the subject matter briefly outlined above can be obtained by referring to the embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate only typical embodiments of the present disclosure and should not be considered as limiting the scope of the disclosure, as other equally effective embodiments are permissible.

[0013] Figure 1A This is a schematic cross-sectional view of an exemplary processing chamber according to at least one embodiment.

[0014] Figure 1B yes Figure 1A A close-up view of a portion of it.

[0015] Figure 2 According to at least one embodiment Figure 1A An enlarged partial cross-sectional view shows another exemplary isolator installed in the processing chamber.

[0016] For ease of understanding, the same reference numerals are used where possible to denote common elements in the figures. It is contemplated that elements and features of one embodiment can be advantageously incorporated into other embodiments without further description. Detailed Implementation

[0017] The embodiments disclosed herein provide apparatus and methods for reducing unwanted residual material deposition and buildup on one or more surfaces within a processing chamber, such as during chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD) processes. The embodiments herein further utilize the processing chamber to provide improved productivity.

[0018] During CVD and PECVD processes, process gases are removed from a portion of a processing volume (referred to herein as the first volume) located between a substrate support and a nozzle via an exhaust channel circumferentially disposed in the chamber wall. The exhaust channel draws the process gases radially outward from a central region of the first volume, which is located above the center of the substrate. The process gases are then discharged from the exhaust channel through an exhaust port formed circumferentially or substantially circumferentially through the chamber wall and fluidly connected to a vacuum source, such as one or more dedicated vacuum pumps.

[0019] During conventional CVD and PECVD processes, undesirable residual material deposition and accumulation occur on flat areas (i.e., unperforated areas) on the non-active peripheral portion of the bottom surface of the nozzle, which are formed without openings, and these flat areas are exposed within the processing volume as the process gas flows from the first volume to the exhaust channel.

[0020] At least some of the process gases flowing along the flat area of ​​the nozzle exhibit undesirable low flow rates (e.g., zero flow rates) or are in recirculation near the flat area, resulting in undesirable residual material deposition and accumulation. Residual material deposition and accumulation on the flat area increases the likelihood that debris and other residual particles will fall from the flat area and land on the substrate surface, which increases the formation of defects on the treated substrate.

[0021] One way to prevent process gases from depositing on flat areas is to increase the temperature in the process chamber. However, in conventional process chambers, the temperature is limited by other factors, such as the maximum allowable temperature of the sealing element and the desired film properties on the substrate.

[0022] Therefore, in the embodiments disclosed herein, the isolator surrounding the flat area of ​​the nozzle is designed to improve the flow of process gas across the flat area and reduce unwanted residual material deposition and buildup on the flat area. Consequently, the benefits of the embodiments herein include reduced residual material deposition on the nozzle, fewer required cleaning cycles, more time between scheduled maintenance, increased productivity, higher yields, and reduced defect formation on the treated substrate.

[0023] Figure 1A This is a schematic cross-sectional view of an exemplary processing chamber 100. The processing chamber 100 may be a CVD chamber, a PECVD chamber, an atomic layer deposition (ALD) chamber, an etching chamber, or other types of vacuum chambers. The processing chamber 100 includes a chamber body 102 having one or more sidewalls 104 commonly defining a processing volume 103, a chamber base 106, and a chamber cover assembly 108, and a substrate support 120 disposed within the processing volume 103. The processing volume 103 includes a first volume 109 and a second volume 110. The first volume 109 is defined by the inner surface of the sidewall 104, the inner surface of the chamber cover assembly 108, and multiple surfaces (such as a first surface 120a) of the substrate support 120 facing the chamber cover assembly when the substrate support 120 is in an elevated substrate processing position (as shown). The second volume is defined by the inner surfaces of one or more sidewalls 104, the plurality of surfaces (such as the second surface 120b) of the substrate support 120 facing the chamber base when the substrate support is in the raised substrate processing position, and the inner surface of the chamber base 106. Typically, the first volume 109 is less than about 10% of the processing volume 103, for example, less than about 5% of the processing volume 103.

[0024] The chamber cover assembly 108 is electrically isolated from one or more sidewalls 104 by an annular isolator 162 disposed between them. The isolator 162 is formed of an electrically insulating material. For example, the isolator 162 may be formed of a ceramic material such as alumina (e.g., Al2O3). A nozzle 112 disposed in and coupled to the chamber cover assembly 108 has a plurality of openings 117 disposed therethrough, which uniformly distribute one or more gaseous precursors from a precursor source 111 into a first volume 109. The plurality of openings 117 may be arranged in one or more concentric rings in the circumferential direction. The nozzle 112 may include one or more of a panel, a baffle, and other intermittent diffuser plates.

[0025] In this document, nozzle 112 is formed of a conductive material such as aluminum and is coupled to a first power source 142 (such as an RF power source), which provides power to ignite and sustain the plasma of the gaseous precursor via capacitive coupling with the gaseous precursor. At least one of a positive or negative polarity DC power source or a pulsed DC power source, and a pulsed RF power source may also be coupled to nozzle 112.

[0026] The bottom surface 114 of the nozzle 112 is adjacent to the processing volume 103. In one example, the nozzle 112 includes a panel, and the bottom surface 114 of the nozzle 112 corresponds to the lower surface of the panel facing the processing volume 103. The bottom surface 114 of the nozzle 112 has a flat region 118 radially outwardly surrounding a plurality of openings 117. The flat region 118 is unperforated. The flat region 118 is formed on the non-opening, inactive peripheral portion of the bottom surface 114 of the nozzle 112 and exposed within the processing volume 103. For example, the inner diameter of the flat region 118 may be defined radially outward of the outermost opening among the plurality of openings 117 (e.g., outward of the outermost concentric ring among one or more concentric rings). The outer diameter of the flat region 118 may be defined radially inward of the isolator 162 (e.g., inside the inner radial edge 172 of the isolator 162, such as...). Figure 1B (As shown). See below for reference. Figure 1B and Figure 2 A more detailed description of flat area 118.

[0027] like Figure 1B and Figure 2As shown, the substrate support 120 includes a first surface 120a facing the chamber cover assembly 108 for receiving the substrate 101, a second surface 120b opposite to the first surface 120a and facing the chamber base 106, and a circumferential third surface 120c connecting the first surface 120a and the second surface 120b. The third surface 120c faces one or more sidewalls 104 and is orthogonal to the first surface 120a and the second surface 120b. The first surface 120a has a first plane, while the second surface 120b has a second plane that is substantially parallel to the first plane. As used herein, the term "substantially parallel" means at least that the first plane and the second plane will not intersect within the processing volume 103 of the processing chamber 100.

[0028] Typically, during processing to form a thin film on substrate 101, substrate 101 is secured to a first surface 120a of substrate support 120 by electrostatic clamping (ESC) force. The clamping force is a function of the voltage supplied to clamping electrodes 124 embedded in the dielectric material of substrate support 120 and the potential between the substrate 101 disposed on substrate support 120. Typically, clamping electrodes 124 are coupled to a second power source 148, such as a DC power source. Substrate support 120 may include one or more heaters (not shown), such as one or more resistance heating elements, embedded therein. Substrate support 120 may include one or more cooling channels (not shown) disposed therein, which are fluidly coupled to and in communication with a coolant source (not shown) via one or more coolant lines (not shown). Typically, the coolant source is a refrigerant source or a water source with relatively high resistance. In one example, substrate support 120 includes both one or more heaters and one or more cooling channels to achieve fine control of the temperature of substrate support 120 and substrate 101 disposed on substrate support 120.

[0029] A substrate support 120 is coupled to a support shaft 121, which is coupled to a lift actuator 115. The lift actuator 115 raises and lowers the support shaft 121 and the substrate support 120 coupled to the support shaft 121 to facilitate the processing of the substrate 101 and its transfer to and from the processing chamber 100. A bellows 107 surrounding the support shaft 121 is coupled to a chamber base 106 and the lift actuator 115 to provide a flexible seal between the chamber base 106 and the lift actuator 115 and to maintain the vacuum integrity of the processing volume 103. The lift actuator 115 is configured to move the substrate support 120 between a lowered position (not shown) for facilitating the transfer of the substrate 101 to and from the processing volume 103 and an raised position (as shown) for processing the substrate 101.

[0030] The substrate 101 is loaded into and removed from the processing volume 103 through an opening 154 in one or more sidewalls 104, which is conventionally sealed with a door or valve (not shown) during substrate processing. Typically, the processing chamber 100 further includes a conventional lifting rod system (not shown) for lifting the substrate 101 from the substrate support 120 when the substrate support 120 is in a lowered position (not shown), which allows the substrate 101 to be accessed by a robotic handler (not shown).

[0031] During substrate processing or chamber cleaning operations, a purge gas can be delivered to the second volume 110. The purge gas flows into the second volume 110 through one or more openings 119, which are located around a support shaft 121 or at one or more locations radially outward from the support shaft 121, passing through the chamber base 106. The openings 119 have a symmetrical cross-sectional shape, such as a circular cross-section. In another example, the openings 119 have an asymmetrical cross-sectional shape. The purge gas is provided by a purge gas source 113 in fluid communication with the openings 119. The purge gas may include one or both of an inert gas and an oxygen-containing gas, such as N2, Ar, Ne, Kr, or combinations thereof, and the oxygen-containing gas such as O2, N2O, CO2, or combinations thereof.

[0032] The exhaust liner assembly 130 disposed in the processing volume 103 is configured to reduce unwanted residual material deposition on the inner wall of the chamber body 102 and the surface of the chamber components disposed in the second volume 110 by promoting uniform removal of processing gases from the first volume 109, and is configured to prevent purge gases from flowing from the second volume 110 into the first volume 109. The exhaust liner assembly 130 includes a circumferential liner 150 (hereinafter referred to as C-liner 150) with a C-shaped channel cross-section, a circumferential isolator 162, and a circumferential top liner 140, which define flow paths for the processing gases and purge gases during substrate processing, as described in more detail below. The processing chamber 100 may include a circumferential bottom liner 165 disposed between a top liner 140 and a chamber base 106, the circumferential bottom liner 165 being lined within at least a portion of the surface of one or more sidewalls 104 facing the processing volume 103.

[0033] In this document, isolator 162 and the corresponding liners 140, 150 and 165 are made of ceramic materials such as alumina, or other materials suitable for resisting heat and corrosion from halogen-containing cleaning plasmas such as NF3-based plasmas. Isolator 162 and liners 140 and 150 may be periodically removed from the processing chamber 100 for scheduled cleaning or replacement.

[0034] In this document, a C-shaped channel liner 150 is disposed in a circumferential channel located below and radially outward from the substrate support 120. The circumferential channel is defined by an isolator 162, one or more sidewalls 104, and a top plate 105 fixed to one or more sidewalls 104. The top plate 105 is positioned adjacent to and radially outward from the isolator 162. When the substrate support 120 is in an elevated substrate processing position (as shown), the circumferential channel and the C-shaped channel liner 150 disposed therein are located below a second plane of the substrate support 120.

[0035] Figure 1B yes Figure 1A A close-up view of a portion of the isolator 162. A portion of the isolator 162 extends radially inward along the inner surface of the chamber cover assembly 108 on one or more sidewalls 104 at a location between the C-channel liner 150 and the chamber cover assembly 108, and terminates radially outward and near the substrate support 120 when the substrate support 120 is in the raised substrate processing position. A top liner 140 is disposed radially inward of the C-channel liner 150. The surfaces of the top liner 140 and the C-channel liner 150 define an exhaust passage 152, which is in fluid communication with a vacuum source (such as one or more dedicated vacuum pumps) through an exhaust port 172 formed through the C-channel liner 150 and further through one of the sidewalls 104.

[0036] Isolator 162 is an annular body having a first end 164 that contacts the bottom surface 114 of nozzle 112. A second end 166 of isolator 162, opposite to the first end 164, is disposed on a C-shaped channel liner 150. An inclined inner wall 168 of isolator 162 is connected to the first end 164 and extends radially outward from the first end 164 toward the second end 166. The first end 164 and the inclined inner wall 168 of isolator 162 form an angle 170. Angle 170 is less than 90°, such as about 60° or less, such as about 45° or less, such as about 0° to about 90°, such as about 30° to about 45°, such as about 35°, such as about 40°, in order to improve the flow of process gas across flat region 118 and reduce unwanted residual material deposition on flat region 118. For example, when angle 170 is less than 90°, low flow rates and recirculation of process gas in flat region 118 are reduced.

[0037] The shape 169 of the processing volume 103, defined by the bottom surface 114 of the nozzle 112 and the inclined inner wall 168 of the isolator 162, forms an angle 171. It should be understood that in the illustrated embodiment, the angle 171 depends on the angle 170 of the isolator 162. The angle 171 is greater than 90°, such as about 135° or greater, such as about 90° to about 180°, such as about 135° to about 150°, such as about 140°, such as about 145°, in order to improve the flow of the processing gas across the flat region 118 and reduce undesirable residual material deposition on the flat region 118 as described above. For example, the angle 170 and shape 169 of the processing volume 103 can ensure laminar flow of the processing gas along the flat region 118.

[0038] An inclined inner wall 168 connects to the first end 164 at the inner radial edge 172 of the isolator 162. The inner diameter D1 of the isolator 162, measured inside the inner radial edge 172, is approximately 340 mm (13 3 / 8 inches) to approximately 343 mm (13 1 / 2 inches), such as approximately 341.3 mm (13 7 / 16 inches). The radial width W1 of the flat region 118, measured inside the inner radial edge 172 of the isolator 162 and outside the outermost of the plurality of openings 117 (e.g., outside the outermost concentric ring of one or more concentric rings), is approximately 11.1 mm (7 / 16 inches) to approximately 12.7 mm (½ inch), such as approximately 11.7 mm (0.46 inches). The ratio of the flat region 118 to the remaining area of ​​the bottom surface 114 of the nozzle 112 inside the flat region 118 is approximately 12% to approximately 15%, such as approximately 14.5%.

[0039] The conical inner wall 174 of the isolator 162 is connected to the second end 166 and extends radially inward from the second end 166 toward the first end 164. The lower inner wall 176 of the isolator 162 connects an inclined inner wall 168 to the conical inner wall 174. The lower inner wall 176 extends toward the second end 166 at an angle different from that of the inclined inner wall 168. The lower inner wall 176 may be substantially flat relative to the inclined inner wall 168 (e.g., having a substantially vertical orientation compared to the non-vertical orientation of the inclined inner wall 168). The inclined inner wall 168 and the lower inner wall 176 of the isolator 162 form an angle 178. The angle 178 is less than 270°, such as about 240° or less, such as about 225° to about 240°, such as about 230°, such as about 235°. The shape 177 of the processing volume 103 defined by the inclined inner wall 168 and the lower inner wall 176 of the isolator 162 forms an angle 179. It should be understood that in the illustrated embodiment, angle 179 depends on angle 178 of isolator 162. Angle 179 is greater than 90°, such as about 120° or greater, such as about 90° to about 180°, such as about 120° to about 135°, such as about 125°, such as about 130°. The radius of curvature of shape 177 can be about 7.6 mm (0.3 inch) or less, such as about 1.27 mm (0.05 inch) to about 5.08 mm (0.2 inch), such as about 2.54 mm (0.1 inch).

[0040] A top liner 140 is disposed between a first end 164 of the isolator 162 and a chamber base 106. The top liner 140 is disposed radially inside one or more sidewalls 104 and a C-shaped channel liner 150. The top liner 140 includes at least an inner wall 144, an inclined outer wall 145, a first end 146 connecting the inner wall 144 to the inclined outer wall 145, and a second end 147 opposite the first end 146 (e.g., ...). Figure 1A (As shown). The top liner 140 may include a tapered inner wall 149 (as shown) connecting the second end 147 to the inner wall 144. Figure 1A (As shown). The tapered inner wall 149 extends radially outward from the inner wall 144 toward the second end 147. When disposed in the processing chamber 100, the inner wall 144 is substantially parallel to the third surface 120c of the substrate support 120 around its outer periphery. When the top liner 140 is disposed in the processing chamber 100, the second end 147 can rest on the surface of the bottom liner 165.

[0041] An angle 143 is defined between a first plane of the inclined inner wall 168 of the isolator 162 and a second plane of the inclined outer wall 145 of the top liner 140. Angle 143 is about 30° or less, such as about 10° or less. In one example, the first and second planes are substantially parallel (e.g., within + / -10 degrees, such as + / -5 degrees, such as + / -3 degrees, such as + / -1 degree). One advantage of isolator 162 is that angle 143 provides unrestricted flow of process gas between the inclined inner wall 168 of isolator 162 and the inclined outer wall 145 of top liner 140.

[0042] The third surface 120c of the substrate support 120 (in the raised position), the top liner 140, and the isolator 162 define a combined gas exhaust volume 122 having a first inlet 123 and a second inlet 125. The first inlet 123 is located between the inclined inner wall 168 of the isolator 162 and the third surface 120c of the substrate support 120. The second inlet 125 is located between the inner wall 144 of the top liner 140 and the third surface 120c of the substrate support 120.

[0043] The opening of the first inlet 123 into the combined gas exhaust volume 122 is located above the first plane of the first surface 120a, allowing unrestricted flow of the process gas along the flat region 118. The minimum distance (e.g., distance 173) between the inclined inner wall 168 and the third surface 120c of the substrate support 120 (which corresponds to the first inlet 123) is greater than about 5.08 mm (0.2 inches), such as about 6.35 mm (0.25 inches), and about 10.16 mm (0.4 inches), such as about 9.6 mm (3 / 8 inch). One advantage of the isolator 162 is that the first inlet 123 has an increased flow area compared to conventional devices where the minimum distance is typically less than 5.08 mm (0.2 inches) (which restricts the flow of the process gas). The isolator embodiment disclosed herein with the increased flow area through the first inlet 123 reduces unwanted residual material deposition on the flat region 118, thereby reducing defect formation on the substrate processed in the processing chamber 100.

[0044] The opening of the second inlet 125 into the combined gas exhaust volume 122 is located above the second plane of the second surface 120b, such that the purified gas is drawn into the combined gas exhaust volume 122 and the processed gas is prevented from flowing into the second volume 110. The outlet 126 from the combined gas exhaust volume 122 into the exhaust passage 152 is defined by the circumferential wall at the inner end of the arm of the C-shaped passage liner 150 and the sidewall-facing surface of the top liner 140.

[0045] During substrate processing, the processing gas from the first volume 109 flows radially outward from the region above the substrate 101 and directly into the combined gas exhaust volume 122, in contrast to conventional devices where the processing gas is forced to flow through a confined area around the third surface 120c of the substrate support 120. Simultaneously, the purge gas in the second volume 110 is drawn into the combined gas exhaust volume 122 through the second inlet 125. Then, both the processing gas and the purge gas are drawn from the combined gas exhaust volume 122 through the outlet 126 and into the exhaust passage 152, where the gas is discharged from the processing chamber 100 through the exhaust port 172. The inclined outer wall 145 of the top liner 140 faces the combined gas exhaust volume 122 and guides the processing gas flow through the first inlet 123 away from the second inlet 125 to prevent undesirable entry of processing gas into the second volume 110.

[0046] Figure 2 yes Figure 1A The enlarged cross-sectional view shows another exemplary isolator 262 installed in the processing chamber 100. Isolator 262 has a different shape compared to isolator 162. In particular, the surface of isolator 262 adjacent to the processing volume 103 has a different profile, which can further improve the flow of processing gas in the flat region 218 and reduce residual material deposition on the flat region 218. Compared to isolator 162, the first end 264 of isolator 262 is wider radially than the first end 164, and the inner diameter D2 of the inner radial edge 272 is smaller than the inner diameter D1. The inner diameter D2 of isolator 262, measured inside the inner radial edge 272, is less than about 340 mm (13 1 / 8 inches), such as about 330.2 mm (13 inches), to about 336.6 mm (13 1 / 4 inches), such as about 333.4 mm (13 1 / 8 inches). As a result, the radial width W2 of the flat region 218 is smaller than the radial width W1 of the flat region 118. The radial width W2 of the flat region 218, measured inside the inner radial edge 272 of the isolator 262 and outside the outermost opening of the plurality of openings 117 (e.g., outside the outermost concentric ring of one or more concentric rings), is less than about 11.1 mm (7 / 16 inch), such as about 6.35 mm (1 / 4 inch) to about 11.1 mm (7 / 16 inch), such as about 6.35 mm (1 / 4 inch) to about 7.94 mm (5 / 16 inch), such as about 7.94 mm (5 / 16 inch). The isolator 262 covers a larger flat region 218 than conventional devices, which provides less area for unwanted residual material deposition and accumulation, thereby reducing defect formation on the substrate processed in the processing chamber 100.

[0047] like Figure 2As shown, the inner radial edge 272 of the isolator 262 is substantially aligned with the inner wall 144 of the top liner 140. In another example (not shown), the inner radial edge 272 of the isolator 262 is located radially inside the inner wall 144 of the top liner 140. The ratio of the flat region 218 to the remaining area of ​​the bottom surface 114 of the nozzle 112 within the flat region 218 is less than about 10%, such as about 8% to about 10%, such as about 9% to about 10%, such as about 9.5%.

[0048] like Figure 2 As shown, the first end 264 of the isolator 262 and the inclined inner wall 268 form an angle 270 less than the angle 170. As a result, the shape 269 of the processing volume 103 defined by the bottom surface 114 of the nozzle 112 and the inclined inner wall 268 of the isolator 262 forms a wider angle 271, which further improves the flow of the processing gas across the flat area 218.

[0049] Compared to isolator 162, the inclined inner wall 268 and lower inner wall 276 of isolator 262 form an angle 278 greater than angle 178. Furthermore, the shape 277 of the processing volume 103 defined by the inclined inner wall 268 and lower inner wall 276 of isolator 262 forms an angle 279 less than angle 179. The radius of curvature of shape 277 is greater than that of the corresponding shape 177. For example, the radius of curvature of shape 277 can be about 7.62 mm (0.3 inches) or greater, such as about 10.16 mm (0.4 inches) to about 15.24 mm (0.6 inches), such as about 12.7 mm (0.5 inches).

[0050] A substrate processing method may include introducing one or more gaseous precursors into a first volume; forming a plasma containing one or more gaseous precursors; exposing the substrate to the plasma; and depositing a material layer on the substrate. The method may also include (in conjunction with the material layer deposition) simultaneously extracting a processing gas containing one or both of unreacted gaseous precursors or gaseous precursor reaction byproducts and a purge gas from a processing volume via a combined gas exhaust volume at least partially disposed between a first plane on a first surface and a second plane on a second surface.

[0051] Plasma can be formed by capacitive coupling with one or more gaseous precursors, wherein the power supplied to a nozzle or a panel of a nozzle disposed in a chamber cover is between about 100 W and about 3000 W. In another example, the processing chamber includes an inductive plasma generator, and plasma is formed by inductive coupling with one or more gaseous precursors.

[0052] One or more gaseous precursors may comprise silicon-containing precursors, such as silane, dimethylsilane, trimethylsilane, tetramethylsilane, diethylsilane, tetramethyl orthosilicate (TMOS), tetraethyl orthosilicate (TEOS), octamethyltetrasiloxane (OMTS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TOMCATS), or mixtures thereof. One or more gaseous precursors may comprise silicon-containing precursors, and one or a mixture of oxygen-containing precursors and hydroxyl-containing precursors, such as oxygen (O2), ozone (O3), NO, NO2, or mixtures thereof, and such hydroxyl-containing precursors as H2O, hydrogen peroxide, or mixtures thereof. One or more gaseous precursors may be combined with a carrier gas such as He, N2, Ar, or combinations thereof before flowing into the treatment volume.

[0053] In one example, the deposited material layer comprises silicon oxide (e.g., SiO2), the gaseous precursor comprises TEOS, and the purge gas, comprising O2, is introduced into the second volume through one or more openings in the chamber base. Typically, the TEOS precursor flow rate is between about 5 g / min and about 30 g / min, such as about 5 g / min and about 25 g / min. The processing volume is typically maintained at a pressure between about 10 mTorr and about 20 Torr, such as between about 1 Torr and about 10 Torr. The substrate is maintained at a temperature between about 350°C and about 550°C, such as between about 400°C and about 500°C, such as about 425°C. The panel temperature is maintained between about 100°C and about 300°C. The Ar carrier gas flow rate is between about 1 slm and about 20 slm, such as between about 5 slm and about 15 slm. The O2 purification gas flow rate is between approximately 1 slm and approximately 20 slm, such as between approximately 1 slm and approximately 10 slm, such as approximately 5 slm. The distance between the first surface of the substrate support and the nozzle is between approximately 150 mil and approximately 300 mil, such as approximately 200 mil and approximately 250 mil. The above values ​​apply to a processing chamber sized for processing 300 mm substrates. Appropriate scaling can be used to sized processing chambers for other substrates.

[0054] Although the foregoing describes embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of which is defined by the appended claims.

Claims

1. A processing chamber, comprising: A chamber body having a chamber base defining a processing volume, one or more sidewalls, and a chamber cover; A nozzle, wherein the nozzle is disposed in the chamber cover and has a bottom surface adjacent to the processing volume; as well as An isolator, disposed between the chamber cover and the one or more sidewalls, the isolator comprising: The first end contacts the nozzle; The second end is opposite to and parallel to the first end; An inclined inner wall, the inclined inner wall being connected to the first end and extending radially outward from the first end toward the second end, wherein the first end forms a first angle of less than 90° with the inclined inner wall of the isolator; and A lower inner wall, which is connected to the inclined inner wall and extends toward the second end at an angle different from that of the inclined inner wall, wherein the inclined inner wall and the lower inner wall define a shape having a radius of curvature.

2. The processing chamber according to claim 1, wherein the first angle is 30° to 45°.

3. The processing chamber according to claim 1, wherein the bottom surface of the nozzle and the inclined inner wall of the isolator form a second angle greater than 90°.

4. The processing chamber according to claim 1, wherein the second angle is 135° to 150°.

5. The processing chamber according to claim 1, wherein the inclined inner wall is connected to the first end at the inner radial edge of the isolator.

6. The processing chamber according to claim 5, wherein the radial width of the flat, unperforated region of the nozzle, measured inside the inner radial edge of the isolator, is less than 11.1 mm.

7. The processing chamber according to claim 5, wherein the inner diameter of the isolator, measured inside the inner radial edge, is less than 340 mm.

8. The processing chamber as claimed in claim 5, further comprising: A liner, disposed between the first end of the isolator and the chamber base, and radially inside the one or more sidewalls, the liner comprising: Inner wall; Sloping outer wall; and A first end, the first end connecting the inner wall to the inclined outer wall; and The second end is opposite to the first end; The inner radial edge of the isolator is substantially aligned with or located radially inside the inner wall of the liner.

9. The processing chamber of claim 1, further comprising a substrate support, wherein the substrate support comprises: First surface; A second surface, which is opposite to the first surface; as well as A third surface, which connects the first surface and the second surface around the periphery of the substrate support; The minimum distance between the inclined inner wall and the third surface of the substrate support is greater than 5 mm.

10. The processing chamber of claim 1, further comprising a liner disposed between the first end of the isolator and the chamber base and radially inside the one or more sidewalls, the liner comprising: Inner wall; Sloping outer wall; A first end connects the inner wall to the inclined outer wall; as well as The second end is opposite to the first end; The first plane of the inclined inner wall of the isolator and the second plane of the inclined outer wall of the liner form a third angle of 30° or less.

11. The processing chamber according to claim 10, wherein the third angle is 10° or less.

12. The processing chamber of claim 10, wherein the first plane and the second plane are substantially parallel.

13. An isolator for processing a chamber, comprising: The annular body has: First end; The second end is opposite to and parallel to the first end; An inclined inner wall is connected to the first end and extends radially outward from the first end toward the second end; A tapered inner wall, the tapered inner wall being connected to the second end and extending radially inward from the second end toward the first end; and A flat inner wall connects the inclined inner wall to the tapered inner wall, wherein the inclined inner wall and the flat inner wall define a shape having a radius of curvature.

14. The isolator according to claim 13, wherein the first end of the isolator and the inclined inner wall form a first angle of less than 90°.

15. The isolator of claim 14, wherein the first angle is from 30° to about 45°.

16. The isolator of claim 13, wherein the inclined inner wall and the flat inner wall of the isolator form a second angle of less than 270°.

17. The isolator of claim 16, wherein the second angle is 225° to 240°.

18. A processing chamber, comprising: A chamber body having a chamber base defining a processing volume, one or more sidewalls, and a chamber cover; A nozzle, disposed within the chamber cover, comprises: The bottom surface is adjacent to the processing volume; Multiple openings, the multiple openings being disposed through the bottom surface; and A flat, unperforated area, the flat, unperforated area radially outward surrounding the plurality of openings; and An isolator disposed between the chamber cover and the one or more sidewalls, the isolator including a first end contacting the chamber cover and a second end opposite to and parallel to the first end, and inclined inner walls and a lower inner wall defining a shape having a radius of curvature, wherein the radial width of the flat region measured inside the inner radial edge of the isolator is less than 11.1 mm.

19. The processing chamber of claim 18, wherein the ratio of the flat region to the remaining area of ​​the bottom surface of the nozzle within the flat region is less than 10%.

20. The processing chamber of claim 18, wherein the plurality of openings are circumferentially aligned into one or more concentric rings, and wherein the radial width of the flat region is measured outside the outermost concentric ring of the one or more concentric rings.

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