High-sensitivity high-integration flat plate ion collector based on tgv technology and working method thereof

Abstract

The application relates to a high-sensitivity high-integration flat plate ion collector based on a TGV technology and a working method thereof. The collector comprises a first substrate and a second substrate arranged at intervals, a deflection electrode arranged on the first substrate, and a detection electrode arranged on the second substrate; first external shielding electrodes and first internal shielding electrodes are arranged on opposite surfaces of the first substrate respectively; the first external shielding electrodes are connected with the first internal shielding electrodes through first TGV electrodes; second internal shielding electrodes and second external shielding electrodes are arranged on opposite surfaces of the second substrate respectively; and the second external shielding electrodes are connected with the second internal shielding electrodes through second TGV electrodes. The application can simultaneously inhibit noise signals in the vertical and horizontal directions, has excellent shielding effect, improves the sensitivity of the ion collector, and can realize high-precision miniaturization manufacturing.

Description

Technical Field

[0001] This invention relates to the field of ion collection technology, specifically to a highly sensitive and integrated flat-plate ion collector based on TGV technology and its operating method. Background Technology

[0002] In recent years, the demand for detection in fields such as atmospheric environment, public safety, and biology has been increasingly strong, leading to the widespread research and application of analytical techniques such as mass spectrometry, chromatography, and ion mobility spectrometry. These techniques operate in a similar manner, requiring ionization, ion separation, and ion collection of the sample. Sample ionization has seen the development of numerous ion sources, such as vacuum ultraviolet lamps, corona sources, radiation sources, and electrospray sources, capable of fully meeting the ionization requirements of gaseous, liquid, and solid target substances. Sample ion separation is mainly affected by the intensity and distribution of the electric field. Currently, single-stage and multi-stage separation methods have been developed, with structures including flat plates and cylinders, enabling the separation of thousands of ions.

[0003] An ion collector is a device that collects ions and transmits signals, and it is widely used in analytical techniques such as mass spectrometry, chromatography, and ion mobility spectrometry. The function of an ion collector is to collect separated sample ions. After the sample ions are separated and enter the collector, a specific DC voltage is applied to the collector electrodes. The resulting electric field draws the ions to the surface of the detection electrode. The resulting weak ion flow is amplified by a weak signal amplification system and output to a display system to obtain the desired sample spectrum. The peak height and baseline noise intensity of the spectrum directly represent the collection sensitivity of the analytical technique for the target sample. Currently, commonly used ion collectors still employ the traditional planar electrode structure, which consists of a pair of parallel electrodes. This structure has advantages such as high ion capture efficiency, simple structure, and easy integration with analytical techniques. However, the shielding capability of the planar ion collector structure is limited, making it highly susceptible to interference from the internal electric field of the analytical instrument and external power frequency noise, leading to a significant decrease in the collection sensitivity of the analytical technique. To improve the sensitivity of the analytical technique, it is essential to effectively suppress noise interference to the ion collector. The ion collection sensitivity of an ion collector is mainly affected by factors such as the amplitude of the applied electric field, its structure, and noise caused by electric field crosstalk. The effects of factors such as the amplitude of the applied electric field and its structure can be addressed through parameter optimization. However, solving the interference effect of noise on the ion collector has always been a difficult problem that needs to be explored.

[0004] Existing methods for reducing the noise impact of ion collectors mainly involve encasing them in a metal shell. However, this metal shell shielding only covers the ion collector portion, resulting in limited shielding, difficulties in ion implantation, and large size, making it difficult to integrate with devices. Surface-surround electrode noise shielding methods using MEMS technology have been proposed and used in recent years. For example, Tang Fei, Wang Xiaohao, and Zhang Liang proposed a design involving sputtering a layer of metal shielding electrodes and an array-type micro-Faraday cylinder structure around the detection electrode. Although these ion collectors are compatible with MEMS technology and reduce the impact of electric field interference on the ion collector to some extent in the vertical direction, the shielding effect is not outstanding. This is mainly because the internal electric field and power frequency electric field of the analytical device can still interfere with the ion collector in the horizontal direction. Horizontal noise shielding remains a challenge for current ion collectors. Chinese patent CN111370291A discloses a device and operating method for a monolithic integrated multi-needle plate discharge ion source and FAIMS analyzer. The TGV fabrication method uses an array of through-hole metal filling method. The through-hole metal can shield the interference of horizontal noise on the ion collector. However, some noise electric field lines can interfere with ion collection through the non-through-hole metal area of ​​the glass. Therefore, this method cannot achieve complete horizontal noise shielding.

[0005] Based on this, the realization of a multi-dimensional, highly efficient interference shielding system that can be vertically and horizontally, and an ion collector that can be integrated and miniaturized, has significant application value. Summary of the Invention

[0006] The purpose of this invention is to provide a high-sensitivity, highly integrated flat-plate ion collector based on TGV technology and its operating method. This ion collector and its operating method can overcome the shortcomings of the prior art, can suppress noise signals in both vertical and horizontal directions simultaneously, has excellent shielding effect, improves the sensitivity of the ion collector, and can achieve high-precision miniaturization.

[0007] To achieve the above objectives, the present invention adopts the following technical solution:

[0008] In a first aspect of the invention, a highly sensitive and highly integrated flat-plate ion collector based on TGV technology is disclosed.

[0009] Specifically, the collector includes a first substrate and a second substrate spaced apart, a biasing electrode disposed on the first substrate, and a detection electrode disposed on the second substrate;

[0010] A first external shielding electrode and a first internal shielding electrode are respectively disposed on two opposite surfaces of the first substrate; the first external shielding electrode is connected to the first internal shielding electrode through a first TGV electrode.

[0011] A second internal shielding electrode and a second external shielding electrode are respectively disposed on two opposite surfaces of the second substrate; the second external shielding electrode is connected to the second internal shielding electrode through a second TGV electrode.

[0012] Furthermore, the first substrate, the second substrate, the first internal shielding electrode, and the second internal shielding electrode form a collection cavity.

[0013] Furthermore, both the first substrate and the second substrate are made of glass.

[0014] Furthermore, the polarizing electrode is connected to an ion traction power supply.

[0015] Furthermore, the detection electrode is connected to an amplifier.

[0016] Furthermore, both the first TGV electrode and the second TGV electrode are TGV electrodes based on conductive silicon.

[0017] The first external shielding electrode is vertically interconnected with the first internal shielding electrode via the first TGV electrode;

[0018] The second external shielding electrode is vertically interconnected with the second internal shielding electrode via the second TGV electrode.

[0019] Furthermore, the collection cavity is provided with an inlet and an outlet.

[0020] In a second aspect of the invention, a method for operating the above-described ion collector is disclosed.

[0021] Specifically, the method includes:

[0022] After the ions to be collected enter the collection chamber of the ion collector, they reach the detection electrode under the action of the polarization electrode and are collected and detected by the detection electrode. During this process, external noise is absorbed by the first external shielding electrode, the first internal shielding electrode, the second external shielding electrode, and the second internal shielding electrode, and internal noise is annihilated on the first TGV electrode and the second TGV electrode.

[0023] Compared with the prior art, the advantages of the present invention are:

[0024] (1) This invention combines the ease of integration of conductive silicon-based materials with the ability to achieve complete shielding of electric fields in both horizontal and vertical directions, as well as internal and external noise. It designs a high-isolation planar ion collector based on TGV technology. This ion collector can significantly reduce noise interference from instrument systems and power frequencies, thereby improving the ion collection performance of the ion detector. This invention utilizes conductive silicon-based TGV to design a novel ion collector. Through vertical interconnection of TGV and combined with MEMS technology, it achieves complete shielding of external (power frequency noise, environmental noise, etc.) and internal (equipment power supply noise, etc.) noise in both horizontal and vertical directions, improving the ion collection sensitivity of the ion collector. Simultaneously, it enables high-precision miniaturization.

[0025] (2) This invention utilizes TGV technology based on conductive silicon to fabricate the shielding electrode of the ion collector. This shielding electrode is characterized by easy integration and miniaturization, and can achieve complete shielding against external and internal noise in both horizontal and vertical directions. This solves the problem of poor shielding capability of the detection electrode and improves the ion collection efficiency and sensitivity of the ion detector. Compared with the shielding method of encasing the ion collector in a metal shell, the ion collector fabricated by this invention can be integrated with other regions such as the ionization region and the separation region, which is beneficial for the miniaturization and mass production of spectroscopic analysis techniques such as ion mobility spectrometry and mass spectrometry. Compared with surrounding the detection electrode with a shielding electrode, the shielding electrode fabricated by this invention can not only completely shield against noise interference in the horizontal direction, but also completely shield against noise interference in the vertical direction, significantly improving the shielding effect and enabling highly sensitive ion detection.

[0026] (3) This invention is innovative in both the material selection and structural design of the TGV electrode. TGV technology is a novel vertical interconnect technology, currently mainly used in advanced 3D packaging, and not in MEMS manufacturing of ion collection devices. Based on the characteristic of conductive silicon TGV wafers being able to horizontally shield electrical signals, this invention, combined with surface metallized shielding electrodes, designs a novel ion collector with multi-dimensional noise signal shielding in both horizontal and vertical directions, improving the collection capability of the ion collector, while also enabling MEMS integration, miniaturization, and mass production. This invention differs significantly from traditional ion collectors in both material selection and design, demonstrating independent innovation. The conductive silicon-based TGV electrode of this invention is not a through-hole array, but a ring of silicon electrodes that can be integrated and interconnected with internal and external shielding electrodes, without any non-through-hole portions, thus achieving complete shielding of noise in both vertical and horizontal directions. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the ion collector in this invention;

[0028] Figure 2 This is a schematic diagram of the structure of an ion collector without noise reduction.

[0029] Figure 3 This is a schematic diagram of a partially noise-reduced ion collector;

[0030] Figure 4 This is a comparison chart showing the noise reduction effects of the ion collector with no noise reduction, partial noise reduction, and structural noise reduction as described in this invention.

[0031] in:

[0032] 1 is the first TGV electrode, 2 is external noise (environmental noise such as power frequency and static electricity), 3 is internal noise (internal noise such as equipment power supply), 4 is the ion to be collected, 5 is the first substrate, 6 is the second substrate, 7 is the polarizing electrode, 8 is the detection electrode, 9 is the first internal shielding electrode, 10 is the first external shielding electrode, 11 is the second internal shielding electrode, 12 is the second external shielding electrode, 13 is the second TGV electrode, 14 is the ion traction power supply, and 15 is the amplifier. Detailed Implementation

[0033] The present invention will be further described below with reference to the accompanying drawings:

[0034] like Figure 1 The diagram illustrates a high-sensitivity, highly integrated planar ion collector based on TGV technology. Specifically, the collector includes a first substrate 5 and a second substrate 6 spaced apart, a polarizing electrode 7 disposed on the first substrate 5, and a detection electrode 8 disposed on the second substrate 6. The polarizing electrode 7 is used to deflect ions onto the detection electrode 8, which is used to collect ions and transmit signals.

[0035] A first external shielding electrode 10 and a first internal shielding electrode 9 are respectively disposed on two opposite surfaces of the first substrate 5; the first external shielding electrode 10 is connected to the first internal shielding electrode 9 through a first TGV electrode 1; a second external shielding electrode 12 and a second internal shielding electrode 11 are respectively disposed on two opposite surfaces of the second substrate 6; the second external shielding electrode 12 is connected to the second internal shielding electrode 11 through a second TGV electrode 13. Both the two external shielding electrodes and the internal shielding electrode are used to shield vertical noise and some horizontal noise, while both TGV electrodes are used to shield horizontal noise. Connecting the external and internal shielding electrodes and the TGV electrode achieves complete shielding.

[0036] This invention utilizes TGV technology to design a vertically interconnected double-layer shielded electrode around the detection electrode. This structure can simultaneously suppress noise signals in both the vertical and horizontal directions, providing excellent shielding performance, improving the sensitivity of the ion collector, and enabling high-precision miniaturization. Through-glass via (TGV) is a novel wafer-level vertical interconnect technology, mainly divided into metal-based TGV and conductive silicon-based TGV. Metal-based TGV has advantages such as high frequency and low transmission loss, and has a clear application in RF chip 3D packaging. Conductive silicon-based TGV utilizes the matching thermal expansion coefficients of silicon and borosilicate glass, offering advantages such as high precision, easy integration, and zero leakage rate. Combined with MEMS processes, it has wide applications in sensor wafer-level fabrication, optoelectronic system integration, and other fields. This invention utilizes conductive silicon-based TGV technology to fabricate vertically interconnected shielded electrodes, solving the problem of ion collectors being susceptible to electric field crosstalk and environmental noise interference, thereby achieving highly sensitive ion collection. Conductive silicon-based TGV technology allows for the fabrication of silicon electrodes within a glass substrate, and the fabricated silicon can shield horizontal interference signals.

[0037] Furthermore, the first substrate 5, the second substrate 6, the first internal shielding electrode 9, and the second internal shielding electrode 11 form a collection cavity. The collection cavity has an inlet and an outlet. The polarizing electrode 7 is connected to the ion traction power supply 14. The detection electrode 8 is connected to the amplifier 15.

[0038] Furthermore, both the first substrate 5 and the second substrate 6 are made of glass. Utilizing the high precision, high flatness, and MEMS compatibility of glass wafers, the integrated and miniaturized manufacturing of the ion collector is achieved.

[0039] Furthermore, both the first TGV electrode 1 and the second TGV electrode 13 are TGV electrodes based on conductive silicon; the first external shielding electrode 10 is vertically interconnected with the first internal shielding electrode 9 through the first TGV electrode 1; the second external shielding electrode 12 is vertically interconnected with the second internal shielding electrode 11 through the second TGV electrode 13. The conductive silicon-based TGV electrode in this invention represents the first time that an ion collector has achieved integrated manufacturing and noise level shielding. Traditional ion collectors can only achieve vertical noise shielding, while the structure of this invention can achieve noise shielding in both the horizontal and vertical directions. This invention solves the problems of poor shielding capability and high-precision manufacturing in traditional ion collectors, utilizing multi-dimensional noise shielding in both the horizontal and vertical directions to improve the ion collection capability of the collector, while simultaneously achieving mass integrated manufacturing.

[0040] The working method of the above-mentioned ion collector is as follows:

[0041] After the ions to be collected enter the collection chamber of the ion collector, they reach the detection electrode 8 under the action of the polarizing electrode 7 and are collected and detected by the detection electrode 8. During this process, external noise is absorbed by the first external shielding electrode 10, the first internal shielding electrode 9, the second external shielding electrode 12 and the second internal shielding electrode 11, and internal noise is annihilated on the first TGV electrode 1 and the second TGV electrode 13.

[0042] Figure 2 This is a structural diagram of an ion collector without noise reduction. Figure 3 This is a structural diagram of a partially noise-reduced ion collector, consisting of... Figure 2 and Figure 3 It can be seen that the un-noise-reduced structure cannot shield internal and external noise, and the detection electrode is subjected to strong interference. The partially noise-reduced structure can only shield some vertical noise and has no effect on horizontal noise. Figure 4 This is a comparison chart showing the noise reduction effects of ion collectors with no noise reduction, partial noise reduction, and noise reduction using the structure of this invention. Figure 4 It can be seen that the noise reduction effect of the present invention is significantly better than that of the ion collector with no noise reduction and the one with partial noise reduction.

[0043] In summary, this invention utilizes the shielding properties of the first and second TGV electrodes to block horizontal electrical signals. By combining the first internal shielding electrode, the first external shielding electrode, the second internal shielding electrode, and the second external shielding electrode, multi-dimensional full noise signal shielding in both the horizontal and vertical directions of the ion collector can be achieved. Only the ions to be collected are captured by the detection electrode, thereby forming a highly sensitive ion current signal. This invention also leverages the high precision, high flatness, and MEMS compatibility of glass wafers to achieve integrated and miniaturized manufacturing of the ion collector.

[0044] The above-described embodiments are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A high-sensitivity, highly integrated flat-plate ion collector based on TGV technology, characterized in that, The collector includes a first substrate and a second substrate spaced apart, a biasing electrode disposed on the first substrate, and a detection electrode disposed on the second substrate; A first external shielding electrode and a first internal shielding electrode are respectively disposed on two opposite surfaces of the first substrate; the first external shielding electrode is connected to the first internal shielding electrode through a first TGV electrode. A second internal shielding electrode and a second external shielding electrode are respectively disposed on two opposite surfaces of the second substrate; the second external shielding electrode is connected to the second internal shielding electrode through a second TGV electrode. Both the first TGV electrode and the second TGV electrode are TGV electrodes based on conductive silicon; The first external shielding electrode is vertically interconnected with the first internal shielding electrode via the first TGV electrode; The second external shielding electrode is vertically interconnected with the second internal shielding electrode via the second TGV electrode.

2. The ion collector according to claim 1, characterized in that, The first substrate, the second substrate, the first internal shielding electrode, and the second internal shielding electrode form a collection cavity.

3. The ion collector according to claim 1, characterized in that, Both the first substrate and the second substrate are made of glass.

4. The ion collector according to claim 1, characterized in that, The biasing electrode is connected to the ion traction power supply.

5. The ion collector according to claim 1, characterized in that, The detection electrode is connected to the amplifier.

6. The ion collector according to claim 2, characterized in that, The collection chamber is equipped with an inlet and an outlet.

7. The method of operating the ion collector according to any one of claims 1 to 6, characterized in that, The method includes: After the ions to be collected enter the collection chamber of the ion collector, they reach the detection electrode under the action of the polarization electrode and are collected and detected by the detection electrode. During this process, external noise is absorbed by the first external shielding electrode, the first internal shielding electrode, the second external shielding electrode, and the second internal shielding electrode, and internal noise is annihilated on the first TGV electrode and the second TGV electrode.

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