A silicon-based OLED evaporation packaging method and OLED display panel

Abstract

The application relates to a silicon-based OLED evaporation packaging method and an OLED display panel, wherein the silicon-based OLED evaporation packaging method is used in the evaporation packaging process of the OLED display panel, first, the glass substrate of a wafer and a glass-based evaporation line is pretreated, then the wafer is fixed on the glass substrate through adhesive glue, and after the OLED full-surface evaporation and TFE packaging of the wafer are completed, the wafer is peeled off from the glass substrate, so that the evaporation of the wafer is completed through the glass-based evaporation line, that is, the full-surface evaporation through the glass-based evaporation line can completely meet the evaporation requirement of the wafer OLED, so that the existing production line capacity can be maximally utilized, the layout cost of the silicon-based OLED is optimized, and the production cost is reduced.

Description

Technical Field

[0001] This invention relates to the field of display device technology, specifically to the field of OLED display device technology, and more specifically to a silicon-based OLED vapor deposition and encapsulation method and an OLED display panel. Background Technology

[0002] Glass-based evaporation lines prepare thin films on glass substrates through evaporation processes, commonly used in optoelectronic devices such as OLED displays. Their advantages include simple processes, low cost, high light transmittance, and saturated color rendering. Silicon-based evaporation lines, on the other hand, prepare thin films on silicon wafers through evaporation, frequently used in semiconductor devices such as integrated circuits and capacitors. Their advantages include compatibility with CMOS processes, good temperature stability, and superior electrical performance. From a process and materials perspective, silicon-based evaporation lines are more complex and refined than glass-based evaporation lines because silicon has better chemical inertness and thermal properties than glass. Silicon can be used to prepare composite materials, multilayer materials, and microstructured materials through zone control methods, thus broadening its application range to fields such as integrated circuits and micro / nano devices. In contrast, glass-based evaporation lines are more suitable for mass production and large-scale manufacturing.

[0003] Currently, the light-emitting principle of conventional silicon-based OLEDs is white OLED + CF film + Fabry-Perot resonant cavity color control, thereby achieving the effect of RGB color display. Therefore, the glass-based evaporation line of conventional OLED panels can fully meet the evaporation requirements of silicon-based OLEDs. How to adjust the production process so that silicon-based OLED evaporation can be carried out on the glass-based evaporation production line is the technical problem that this application aims to solve. Summary of the Invention

[0004] A primary objective of this invention is to overcome at least one of the aforementioned deficiencies by providing a silicon-based OLED vapor deposition and encapsulation method and an OLED display panel. This method can rationally utilize glass-based vapor deposition lines to complete wafer vapor deposition and encapsulation, thereby producing OLED display panels, optimizing production line capacity, and saving manufacturing costs.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] This invention provides a silicon-based OLED vapor deposition and encapsulation method for vapor deposition and encapsulation of wafers, comprising:

[0007] S1: Perform surface pretreatment on the wafer;

[0008] S2: Surface pretreatment of the glass substrate;

[0009] S3: The wafer is bonded and fixed to the surface of the glass substrate, and then the wafer is vapor-deposited.

[0010] S4: After the vapor deposition is completed, the wafer is encapsulated in a thin film;

[0011] S5: Debond the wafer to the glass substrate;

[0012] S6: Take out the wafer that has completed the vapor deposition and packaging.

[0013] According to one embodiment of the present invention, in step S3, the bonding and fixing between the wafer and the glass substrate is cured after being bonded with adhesive, and the adhesive is spin-coated or wire-coated at the contact surface between the wafer and the glass substrate.

[0014] According to one embodiment of the present invention, the adhesive used in step S3 is a hydrolyzed adhesive, a pyrolytic adhesive, or a photolytic adhesive.

[0015] According to one embodiment of the present invention, during the bonding and fixing process between the wafer and the glass substrate by adhesive bonding and curing, the adhesive between the wafer and the glass substrate is cured by pressure curing, heat curing or ultraviolet curing.

[0016] According to one embodiment of the present invention, the debonding method used in step S4 during the debonding process of the wafer and the glass substrate includes hydrolytic peeling, laser peeling, or thermal stress peeling.

[0017] According to one embodiment of the present invention, the boiling temperature for debonding the wafer and the glass substrate by the hydrolytic stripping method is between 5 and 100°C.

[0018] According to one embodiment of the present invention, the wafer circuit and anode are fabricated before surface pretreatment.

[0019] According to one embodiment of the present invention, the wafer circuit includes an IC integrated circuit, a pixel area circuit, and a lead area circuit.

[0020] According to one embodiment of the present invention, after step S5 is completed, the wafer is subjected to CF process treatment and then the cover plate is packaged.

[0021] In particular, the present invention provides an OLED display panel prepared using the silicon-based OLED vapor deposition and encapsulation method described above.

[0022] Compared with existing technologies, the advantages and beneficial effects of the silicon-based OLED evaporation and encapsulation method and OLED display panel disclosed in this patent application are as follows:

[0023] The silicon-based OLED vapor deposition and encapsulation method of this application involves pre-treating the wafer and the glass substrate of the glass-based vapor deposition line during the vapor deposition and encapsulation process of the OLED display panel. Then, the wafer is fixed on the glass substrate using adhesive. After completing the full-area OLED vapor deposition and TFE encapsulation of the wafer, the wafer is peeled off from the glass substrate. Thus, the vapor deposition of the wafer is completed through the glass-based vapor deposition line. In other words, the full-area vapor deposition through the glass-based vapor deposition line can fully meet the vapor deposition requirements of wafer OLED. This can maximize the utilization of existing production line capacity, optimize the layout cost of silicon-based OLED, and thereby reduce production costs. Attached Figure Description

[0024] The following sections will describe some specific embodiments of the invention in detail by way of example and not limitation, with reference to the accompanying drawings. The same reference numerals in the drawings denote the same or similar parts or portions. Those skilled in the art should understand that these drawings are not necessarily drawn to scale. In the drawings:

[0025] Figure 1 This is a schematic diagram of the processing flow of a silicon-based OLED vapor deposition and encapsulation method according to an embodiment of the present invention. Detailed Implementation

[0026] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0027] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0028] Furthermore, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0029] This embodiment describes a silicon-based OLED vapor deposition and encapsulation method, such as... Figure 1 As shown, the process for vapor deposition and encapsulation of wafers includes:

[0030] S1: Perform surface pretreatment on the wafer;

[0031] S2: Surface pretreatment of the glass substrate;

[0032] S3: The wafer is bonded and fixed to the surface of the glass substrate, and then the wafer is vapor-deposited.

[0033] S4: After the vapor deposition is completed, the wafer is encapsulated in a thin film;

[0034] S5: Debond the wafer to the glass substrate;

[0035] S6: Take out the wafer that has completed the vapor deposition and packaging.

[0036] The steps above do not necessarily have to be performed in the correct order. For example, steps S4 and S5 can be swapped. That is, the wafer and the glass substrate can be debonded first after the vapor deposition is completed, and then the wafer can be encapsulated in thin film through another packaging line.

[0037] According to one embodiment of the present invention, in step S3, the bonding and fixing between the wafer and the glass substrate is cured after being bonded with adhesive, and the adhesive is spin-coated or wire-coated at the contact surface between the wafer and the glass substrate.

[0038] According to one embodiment of the present invention, the adhesive used in step S3 is a hydrolyzable adhesive, a pyrolytic adhesive, or a photolytic adhesive. According to one embodiment of the present invention, during the bonding and fixing process between the wafer and the glass substrate using the adhesive, the adhesive between the wafer and the glass substrate is cured by pressure curing, thermal curing, or ultraviolet curing.

[0039] According to one embodiment of the present invention, the debonding method used in step S4 during the debonding process of the wafer and the glass substrate includes hydrolytic peeling, thermal stress peeling, or laser peeling.

[0040] Hydrolyzed adhesive refers to adhesive that can be debonded in water after curing. The boiling temperature for debonding the wafer and the glass substrate using the hydrolytic peeling method is between 5 and 100°C.

[0041] Pyrolytic adhesives refer to adhesives that have been cured by heating to 120-130 degrees Celsius, causing them to lose their tackiness. Then, by applying an external force, pyrolytic stress peeling is achieved.

[0042] Photolytic adhesive refers to adhesive that has been cured and debonded by irradiating it with a laser, thereby debonding and peeling it off.

[0043] According to one embodiment of the present invention, the wafer circuit and anode are fabricated before surface pretreatment.

[0044] According to one embodiment of the present invention, the wafer circuit includes an IC integrated circuit, a pixel area circuit, and a lead area circuit.

[0045] According to one embodiment of the present invention, after step S5 is completed, the wafer is subjected to CF process treatment and then the cover plate is packaged.

[0046] In particular, the present invention provides an OLED display panel prepared using the silicon-based OLED vapor deposition and encapsulation method described above.

[0047] In summary, the silicon-based OLED vapor deposition and encapsulation method of this application first pre-treats the wafer and the glass substrate of the glass-based vapor deposition line during the vapor deposition and encapsulation process of the OLED display panel. Then, the wafer is fixed on the glass substrate with adhesive. After completing the full-area OLED vapor deposition and TFE encapsulation of the wafer, the wafer is peeled off from the glass substrate. Thus, the vapor deposition of the wafer is completed through the glass-based vapor deposition line. In other words, the full-area vapor deposition through the glass-based vapor deposition line can fully meet the vapor deposition requirements of wafer OLED. This can maximize the utilization of existing production line capacity, optimize the layout cost of silicon-based OLED, and thus reduce production costs.

[0048] The above embodiments are only for illustrating the technical concept and features of the present invention. Their purpose is to enable those skilled in the art to understand the content of the present invention and implement it accordingly. They should not be used to limit the scope of protection of the present invention. All equivalent changes or modifications made in accordance with the spirit and essence of the present invention should be covered within the scope of protection of the present invention.

Claims

1. A silicon-based OLED vapor deposition and encapsulation method, used for vapor deposition and encapsulation of wafers, characterized in that, Silicon-based OLEDs are encapsulated using glass-based evaporation lines, including: S1: Perform surface pretreatment on the wafer; S2: Perform surface pretreatment on the glass substrate of the glass-based evaporation line; S3: The wafer is bonded and fixed to the surface of the glass substrate, and then the wafer is vapor-deposited. S4: After the vapor deposition is completed, the wafer is encapsulated in a thin film; S5: Debond the wafer to the glass substrate; S6: Take out the wafer that has completed the vapor deposition and packaging.

2. The silicon-based OLED vapor deposition and encapsulation method according to claim 1, characterized in that, In step S3, the bonding and fixing between the wafer and the glass substrate is achieved by bonding with adhesive and then curing. The adhesive is spin-coated or wire-coated onto the contact surface between the wafer and the glass substrate.

3. The silicon-based OLED vapor deposition and encapsulation method according to claim 2, characterized in that, The adhesive used in step S3 is a hydrolyzed adhesive, a pyrolytic adhesive, or a photolytic adhesive.

4. The silicon-based OLED vapor deposition and encapsulation method according to claim 2, characterized in that, The bonding and fixing between the wafer and the glass substrate is achieved through the bonding and curing process of the adhesive, which is cured by pressure curing, heat curing, or ultraviolet curing.

5. The silicon-based OLED vapor deposition and encapsulation method according to claim 1, characterized in that, The debonding methods used in step S4 to debond the wafer and the glass substrate include hydrolytic peeling, thermal stress peeling, or laser peeling.

6. The silicon-based OLED vapor deposition and encapsulation method according to claim 1, characterized in that, The water temperature during the hydrolytic stripping method for debonding the wafer and the glass substrate is controlled between 5 and 100°C.

7. The silicon-based OLED vapor deposition and encapsulation method according to claim 1, characterized in that, The wafer circuit and anode are fabricated before surface pretreatment.

8. The silicon-based OLED vapor deposition and encapsulation method according to claim 7, characterized in that, The wafer circuit includes an IC integrated circuit, a pixel area circuit, and a lead area circuit.

9. The silicon-based OLED vapor deposition and encapsulation method according to claim 1, characterized in that, After step S5 is completed, the wafer is processed by CF process and then encapsulated with a cover plate.

10. An OLED display panel prepared by the silicon-based OLED vapor deposition encapsulation method as described in any one of claims 1 to 9.

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