Method and system for testing a memory
CN117012255BActive Publication Date: 2026-08-28CHANGXIN MEMORY TECH INC
Patent Information
- Application Number
- CN202210472928.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-04-29
- Publication Date
- 2026-08-28
- Estimated Expiration
- 2042-04-29
AI Technical Summary
Technical Problem
然而，存储器的电性测试是基于信号的读写进行的，因此往往会因为测试方法的原因导致一些特殊原因的异常无法被侦测到
Benefits of technology
[0013]本公开实施例的技术方案，通过将存储器中的存储单元划分为第一存储单元和第二存储单元两类，在检测过程中读取第一存储单元内的数据，并在读取后更新数据，然后读取第二存储单元的数据。这样，通过读取的数据可以有效检测出第二存储单元是否被第一存储单元的更新数据所影响，从而判断出第二存储单元是否通过测试，进而识别出诸如存储单元之间或者外围电路之间的漏电等问题。
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Figure CN117012255B_ABST
Abstract
The embodiments of the present disclosure disclose a memory testing method and a testing system. The method comprises the following steps: providing a memory, wherein the memory comprises at least a plurality of first memory cells and a plurality of second memory cells; reading data in the plurality of first memory cells and updating the data in the plurality of first memory cells as first data; reading data in the plurality of second memory cells and processing the read data to obtain first test data; and determining whether the second memory cells pass the first test by using the first test data. By using the above method, it can be determined whether the memory cells and the peripheral circuit thereof are abnormal.
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Citation Information
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