A calibration control circuit, electronic device, and calibration control method

Abstract

This disclosure provides a calibration control circuit, electronic device, and calibration control method. The calibration control circuit includes: a process module configured to perform process corner testing on the memory in a first test mode to obtain a test result signal, and the test result signal is used to determine process corner parameters; an off-chip calibration module configured to receive and store a first calibration code sent by a user; wherein the first calibration code is determined by the user based on the current environmental parameters and process corner parameters of the memory; and a mode switching module configured to receive a calibration mode signal and the first calibration code; when the calibration mode signal indicates off-chip calibration mode, the first calibration code is determined as a ZQ calibration code. In this way, with the help of process corner parameters, the user can quickly and reasonably determine the first calibration code, and then directly set the ZQ calibration code in off-chip calibration mode, which not only reduces power consumption but also saves system time.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor memory technology, and more particularly to a calibration control circuit, electronic device, and calibration control method. Background Technology

[0002] In Dynamic Random Access Memory (DRAM), there are output driver modules and termination resistor modules used to implement signal transmission. During DRAM operation, the resistance values ​​of the output driver modules and termination resistor modules need to be calibrated to match actual operating conditions (such as voltage and temperature); this is called ZQ calibration. However, ZQ calibration consumes power and system time, reducing memory performance. Summary of the Invention

[0003] This disclosure provides a calibration control circuit, electronic device, and calibration control method that can reduce the power consumption of ZQ calibration processing and save memory resources.

[0004] The technical solution disclosed herein is implemented as follows:

[0005] In a first aspect, embodiments of this disclosure provide a calibration control circuit applied to a memory, comprising:

[0006] The process module is configured to perform process corner testing on the memory in the first test mode, obtain a test result signal, and use the test result signal to determine the process corner parameters; the off-chip calibration module is configured to receive and store the first calibration code sent by the user; wherein the first calibration code is determined by the user based on the current environmental parameters and process corner parameters of the memory; the mode switching module is configured to receive the calibration mode signal and the first calibration code; when the calibration mode signal indicates the off-chip calibration mode, the first calibration code is determined as the ZQ calibration code.

[0007] In some embodiments, the process module includes a monitoring module and a read / write register group; wherein, the read / write register group is configured to receive a write instruction containing an on time and an off time in a first test mode, and store the on time and off time; the monitoring module is configured to perform process corner testing on the memory based on the on time and off time in the first test mode, and obtain a test result signal; the read / write register group is further configured to acquire and store the test result signal; and output the test result signal upon receiving a first read instruction.

[0008] In some embodiments, the process angle parameter is used to determine a target coefficient value among multiple preset coefficient values; wherein, the preset coefficient value is used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process angle parameters; during the operation of the memory, the user calculates the first calibration code based on the target coefficient value, the current environmental parameters and the calibration code base value, where the calibration code base value refers to the value of the first calibration code under standard environmental parameters.

[0009] In some embodiments, the process angle parameter is used to select a target parameter table from multiple preset parameter tables; wherein, the preset parameter table is used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables have a corresponding relationship with different process angle parameters; during the operation of the memory, the user uses the target parameter table to determine the first calibration code corresponding to the current environmental parameter.

[0010] In some embodiments, the calibration control circuit further includes an on-chip calibration module; wherein the on-chip calibration module is configured to receive an enable signal; when the enable signal is active, it performs ZQ self-calibration processing on the memory to obtain a second calibration code adapted to the current environmental parameters; the mode switching module is further configured to receive the second calibration code; when the calibration mode signal indicates the on-chip calibration mode, it determines the second calibration code as the ZQ calibration code.

[0011] In some embodiments, the mode switching module includes a first selection module and a second selection module; wherein, the first selection module is configured to receive a calibration mode signal; when the calibration mode signal indicates an off-chip calibration mode, it outputs a selection signal in a first state and an enable signal in an invalid state; or, when the calibration mode signal indicates an on-chip calibration mode, it outputs a selection signal in a second state and an enable signal in an active state; the second selection module is configured to receive a selection signal; when the selection signal is in the first state, it outputs a first calibration code as a ZQ calibration code; or, when the selection signal is in the second state, it outputs a second calibration code as a ZQ calibration code.

[0012] In some embodiments, the first selection module includes a first write register, the second selection module includes a multiplexer, and the off-chip calibration module includes a second write register group; wherein, the input of the first write register is used to receive a calibration mode signal, and the input of the second write register group is used to receive a first calibration code; the enable terminal of the on-chip calibration module is connected to the first output terminal of the first write register and is used to receive an enable signal; the control terminal of the multiplexer is connected to the second output terminal of the first write register and is used to receive a selection signal; the first input terminal of the multiplexer is connected to the output terminal of the on-chip calibration module and is used to receive a second calibration code; the second input terminal of the multiplexer is connected to the output terminal of the second write register group and is used to receive the first calibration code; the output terminal of the multiplexer is used to output a ZQ calibration code.

[0013] In some embodiments, the calibration control circuit further includes a data acquisition module, the input of which is connected to the output of the mode switching module; the on-chip calibration module is further configured to perform ZQ self-calibration processing on the memory against standard environmental parameters in the second test mode to obtain a calibration code base value; the mode switching module is further configured to receive a calibration mode signal indicating the on-chip calibration mode in the second test mode to output the calibration code base value; and the data acquisition module is configured to acquire the calibration code base value, which is used to determine the first calibration code.

[0014] In some embodiments, the acquisition module includes a read-only register group, the input of which is connected to the output of a multiplexer; wherein the read-only register group is configured to acquire the output signal of the multiplexer; the read-only register group is also configured to receive a second read instruction in a second test mode; and output a calibration code base value according to the second read instruction.

[0015] In some embodiments, the memory further includes an output driver module and a termination resistor module; wherein the memory is further configured to write the ZQ calibration code into the output driver module and the termination resistor module to perform resistance calibration processing of the output driver module and the termination resistor module.

[0016] In a second aspect, embodiments of this disclosure provide an electronic device that includes a memory, and the memory includes a calibration control circuit as described in the first aspect.

[0017] Thirdly, embodiments of this disclosure provide a calibration control method applied to an electronic device including a memory, the method comprising:

[0018] In the first test mode, the memory is subjected to process corner testing to obtain a test result signal, which is used to determine the process corner parameters. After providing the process corner parameters to the user, the first calibration code sent by the user is received. The first calibration code is determined by the user based on the current environmental parameters and process corner parameters of the memory. A calibration mode signal is received, and if the calibration mode signal indicates off-chip calibration mode, the first calibration code is determined as the ZQ calibration code.

[0019] In some embodiments, the method further includes: when the calibration mode signal indicates an on-chip calibration mode, controlling the memory to perform ZQ self-calibration processing to obtain a second calibration code, and determining the second calibration code as the ZQ calibration code.

[0020] In some embodiments, the method further includes: detecting the current environmental parameters of the memory; providing the user with process corner parameters, current environmental parameters, and a calibration code base value; receiving a first calibration code, wherein the first calibration code is calculated using a target coefficient value, the calibration code base value, and the current environmental parameters; wherein the target coefficient value is selected from multiple preset coefficient values ​​based on the process corner parameters, the preset coefficient values ​​are used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process corner parameters; the calibration code base value refers to the value of the first calibration code under standard environmental parameters.

[0021] In some embodiments, the method further includes: in a second test mode, controlling a calibration mode signal to indicate an on-chip calibration mode; and controlling the memory to perform ZQ self-calibration processing based on standard environmental parameters to obtain a calibration code base value.

[0022] In some embodiments, multiple preset coefficient values ​​are provided to the user by the electronic device; or, the method further includes: in a second test mode, controlling a calibration mode signal to indicate an on-chip calibration mode; controlling the memory to perform multiple ZQ self-calibration processes based on multiple environmental parameters to obtain multiple candidate calibration codes; and performing fitting processing on the multiple environmental parameters and multiple candidate calibration codes to determine the preset coefficient values ​​corresponding to the process corner parameters.

[0023] In some embodiments, the target coefficient value includes a voltage coefficient and a temperature coefficient, the standard environmental parameters include a standard voltage parameter and a standard temperature parameter, and the current environmental parameters include a current voltage parameter and a current temperature parameter; the difference between the current voltage parameter and the standard voltage parameter is recorded as the voltage change value, and the difference between the current temperature parameter and the standard temperature parameter is recorded as the temperature change value; the first calibration code is obtained by summing the product of the calibration code base value, the voltage change value and the voltage coefficient, and the product of the temperature change value and the temperature coefficient.

[0024] In some embodiments, the method further includes: detecting the current environmental parameters of the memory; providing the current environmental parameters and process corner parameters to the user; receiving a first calibration code, wherein the first calibration code is determined by a target parameter table and the current environmental parameters; wherein the target parameter table is selected from multiple preset parameter tables based on the process corner parameters, the preset parameter tables are used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables have a corresponding relationship with different process corner parameters.

[0025] In some embodiments, multiple preset parameter tables are provided to the user by the electronic device; or, the method further includes: in a second test mode, controlling a calibration mode signal to indicate an on-chip calibration mode; controlling the memory to perform multiple ZQ self-calibration processes based on multiple environmental parameters to obtain multiple candidate calibration codes; and determining a preset parameter table corresponding to the process corner parameters based on the multiple environmental parameters and the multiple candidate calibration codes.

[0026] This disclosure provides a calibration control circuit, electronic device, and calibration control method. With the help of process corner parameters, users can quickly and reasonably determine the first calibration code, and then directly set the ZQ calibration code in off-chip calibration mode, which not only reduces power consumption but also saves system time. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of a calibration control circuit provided in an embodiment of the present disclosure;

[0028] Figure 2 This is a schematic diagram of another calibration control circuit provided in an embodiment of the present disclosure;

[0029] Figure 3 This is a schematic diagram illustrating an application scenario of a calibration control circuit provided in an embodiment of the present disclosure;

[0030] Figure 4 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present disclosure;

[0031] Figure 5 This is a schematic flowchart of a calibration control method provided in an embodiment of the present disclosure. Detailed Implementation

[0032] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely for explaining the relevant applications and are not intended to limit the applications. Furthermore, it should be noted that, for ease of description, only the parts relevant to the relevant applications are shown in the accompanying drawings.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. The terminology used herein is for the purpose of describing embodiments of this disclosure only and is not intended to be limiting of this disclosure.

[0034] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0035] It should be noted that the terms "first, second, third" used in the embodiments of this disclosure are only used to distinguish similar objects and do not represent a specific order of objects. It is understood that "first, second, third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of this disclosure described herein can be implemented in an order other than that illustrated or described herein.

[0036] The following are explanations of the technical terms used in the embodiments of this disclosure, as well as the correspondences of some terms:

[0037] Low Power Double Data Rate (LPDDR) SDRAM (Joint Electron Device Engineering Council, JEDEC)

[0038] With technological advancements, the data processing frequency of memory (such as LPDDR) is increasing, making it crucial to maintain signal integrity during data transmission. For instance, LPDDR has a ZQ pin (BALL), which is connected to a 240-ohm standard resistor. This resistor is used to calibrate the output impedance of the data signal DQ and the termination impedance of the command address signal CA, achieving impedance matching during signal transmission. This impedance calibration process is also known as ZQ calibration.

[0039] Currently, during the operation of LPDDR, frequent ZQ self-calibration is required based on the external conditions of the memory. However, if the external conditions are constant, such as constant voltage and temperature, the ZQ calibration code obtained after each ZQ calibration for the same chip will be roughly the same, or the least significant bit of the ZQ calibration code may be slightly affected by noise, but still within the error range. Nevertheless, each ZQ self-calibration consumes power and takes up calibration time, resulting in wasted memory resources. Furthermore, if the system voltage noise is high, the ZQ calibration code may be significantly affected by the voltage noise, leading to a decrease in signal integrity due to impedance mismatch.

[0040] Based on this, the present disclosure provides a calibration control circuit that allows users to quickly and reasonably determine the first calibration code using process corner parameters, and then directly set the ZQ calibration code in off-chip calibration mode, which not only reduces power consumption but also saves system time.

[0041] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0042] In some embodiments of this disclosure, a calibration control method is provided, which may include:

[0043] S1: Receive calibration mode signal.

[0044] S2: When the calibration mode signal indicates off-chip calibration mode, the first calibration code sent by the user is determined as the ZQ calibration code.

[0045] S3: When the calibration mode signal indicates the on-chip calibration mode, control the memory to perform ZQ self-calibration processing to obtain a second calibration code adapted to the current environmental parameters, and determine the second calibration code as the ZQ calibration code.

[0046] Here, steps S2 and S3 are not sequential.

[0047] It should be noted that the calibration control method provided in this disclosure is applied to a memory, and the memory supports on-chip calibration mode and off-chip calibration mode. Therefore, users can send calibration mode signals to select the required ZQ calibration mode to match different practical application scenarios.

[0048] It should be noted that in off-chip calibration mode, the first calibration code sent by the user is used as the ZQ calibration code to achieve memory impedance calibration; in on-chip calibration mode, the second calibration code obtained after ZQ self-calibration is used as the ZQ calibration code to achieve memory impedance calibration. It should be understood that the ZQ calibration code is subsequently written to the input impedance module and the termination resistor module, thereby calibrating the output impedance of the data signal DQ and the termination impedance of the command address signal CA to the desired values.

[0049] This allows users to choose between on-chip or off-chip calibration modes to determine the ZQ calibration code, achieving optimal performance in different application scenarios. Under constant external conditions, users can set the ZQ calibration code using off-chip calibration mode, eliminating the need for frequent ZQ self-calibration. This not only reduces power consumption and saves system time, but also minimizes resource waste and improves memory data processing performance. Furthermore, off-chip calibration mode avoids deviations introduced by environmental noise into the ZQ calibration code, preventing signal integrity degradation caused by impedance mismatch.

[0050] In one embodiment of this disclosure, see Figure 1 This illustration shows a schematic diagram of the composition of a calibration control circuit 10 provided in an embodiment of this disclosure. Figure 1 As shown, the calibration control circuit 10 may include:

[0051] The process module 17 is configured to perform a process corner test on the memory in the first test mode, obtain a test result signal, and use the test result signal to determine the process corner parameters.

[0052] The off-chip calibration module 11 is configured to receive and store a first calibration code sent by the user; wherein the first calibration code is determined by the user based on the current environmental parameters and process corner parameters of the memory.

[0053] The mode switching module 13 is configured to receive a calibration mode signal and a first calibration code; when the calibration mode signal indicates an off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code.

[0054] It should be noted that the calibration control circuit 10 of this embodiment is applied to various types of memory. For example, the memory can be LPDDR4, LPDDR5, DDR4, DDR5, etc.

[0055] like Figure 1 As shown, the process module 17, off-chip calibration module 11, and mode switching module 13 are all connected to the command bus. Specifically, the process module 17 receives control commands from the command bus, performs process corner testing on the memory according to the control commands, and outputs the test result signal via the command bus, which is subsequently used to determine the process corner parameters; the off-chip calibration module 11 receives a first calibration code from the command bus and sends the first calibration code to the mode switching module 13; the mode switching module 13 receives a calibration mode signal from the command bus, and when the calibration mode signal indicates off-chip calibration mode, it determines the first calibration code as the ZQ calibration code.

[0056] Here, the process corner parameter measures the effective operating conditions of the memory, which vary slightly between different batches. Based on the memory's process corner parameter and the current environmental parameters, users can quickly and accurately determine the first calibration code.

[0057] In other words, in this embodiment of the present disclosure, by providing the user with the process corner parameters of the memory, the user can reasonably determine the first calibration code; at the same time, the memory provides an off-chip calibration mode, allowing the user to directly define the ZQ calibration code, which not only reduces power consumption and saves system time, but also reduces resource waste, improves the data processing performance of the memory, and can also avoid the deviation introduced by environmental noise to the ZQ calibration code, and avoid the signal integrity degradation of the memory caused by impedance mismatch.

[0058] In some embodiments, such as Figure 2 As shown, the process module 17 may include a monitoring module 171 and a read / write register group 172; wherein,

[0059] The read / write register group 172 is configured to receive a write command containing the enable and disable times in the first test mode, and store the enable and disable times;

[0060] Monitoring module 171 is configured to perform process corner testing on the memory based on the power-on time and power-off time in the first test mode, and obtain the test result signal;

[0061] The read / write register group 172 is also configured to acquire and store test result signals; and to output test result signals upon receiving the first read instruction.

[0062] It should be noted that the monitoring module 171 is used to perform process corner testing on the memory within a predetermined temperature, predetermined voltage, and predetermined time interval; its essence can be a ring oscillator. The read / write register group 172 is used to receive test-related parameters, such as the ring oscillator's on-time and off-time, and to acquire and output test result signals (such as the ring oscillator's count value, i.e., the test result signal). Subsequently, the process corner parameters can be obtained by analyzing the test result signals; the specific analysis process can be performed automatically or manually.

[0063] In some embodiments, the process angle parameter is used to determine a target coefficient value among multiple preset coefficient values; wherein, the preset coefficient value is used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process angle parameters; during the operation of the memory, the user calculates the first calibration code based on the target coefficient value, the current environmental parameters and the calibration code base value, where the calibration code base value refers to the value of the first calibration code under standard environmental parameters.

[0064] It should be noted that the preset coefficient values ​​can be provided to the user by the electronic device containing the memory, or stored by the user themselves. The standard voltage and standard temperature parameters can be selected according to the actual application scenario. For example, the standard voltage parameter = 0.6V, and the standard temperature parameter = 25℃.

[0065] In one specific embodiment, each environmental parameter and preset coefficient value includes a sub-parameter. The user can then calculate the first calibration code as follows: First calibration code = Calibration code base value + Target coefficient value × (Current environmental parameter - Standard environmental parameter).

[0066] In another specific embodiment, each environmental parameter and preset coefficient value includes multiple sub-parameters. For example, each environmental parameter includes a voltage parameter and a temperature parameter, and the target coefficient value includes a voltage coefficient and a temperature coefficient. In this case, the user calculates the first calibration code as follows: First calibration code = calibration code base value + voltage coefficient × (current voltage parameter - standard voltage parameter) + temperature coefficient × (current temperature parameter - standard temperature parameter).

[0067] In other embodiments, the process corner parameter is used to select a target parameter table from multiple preset parameter tables; wherein, the preset parameter table is used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables have a corresponding relationship with different process corner parameters; during the operation of the memory, the user uses the target parameter table to determine the first calibration code corresponding to the current environmental parameter.

[0068] It should be noted that the preset parameter table can be provided to the user by the electronic device where the memory is located, or it can be stored by the user himself.

[0069] In this way, the target parameter table can be directly determined based on the process angle parameters, and then the required first calibration code can be selected from the target parameter table using the current environmental parameters, saving the calculation process and making it easier for users to use.

[0070] In some embodiments, such as Figure 2 As shown, the calibration control circuit 10 may further include an on-chip calibration module 12; wherein,

[0071] The on-chip calibration module 12 is configured to receive an enable signal; when the enable signal is valid, it performs ZQ self-calibration processing on the memory to obtain a second calibration code adapted to the current environmental parameters.

[0072] The mode switching module 13 is also configured to receive a second calibration code; when the calibration mode signal indicates the on-chip calibration mode, the second calibration code is determined to be the ZQ calibration code.

[0073] It should be noted that the on-chip calibration module 12 is externally connected to a standard resistor (240 ohms), which enables ZQ self-calibration based on the standard resistor, calibrating the memory's output impedance and termination impedance to the standard resistance value. ZQ self-calibration refers to on-chip ZQ calibration automatically performed under certain temperature, voltage, and time variation conditions; please refer to the relevant JEDEC specifications for details.

[0074] Thus, in this embodiment, the user can select either on-chip calibration mode or off-chip calibration mode to determine the ZQ calibration code, achieving optimal performance in different practical application scenarios. Under constant external conditions, the user can directly set the ZQ calibration code using off-chip calibration mode, eliminating the need for frequent ZQ self-calibration. This not only reduces power consumption but also saves system time, thereby reducing resource waste and improving memory data processing performance. Furthermore, off-chip calibration mode can prevent environmental noise from introducing deviations into the ZQ calibration code, avoiding signal integrity degradation caused by impedance mismatch.

[0075] like Figure 2 As shown, in some embodiments, the mode switching module 13 may include a first selection module 131 and a second selection module 132; wherein,

[0076] The first selection module 131 is configured to receive a calibration mode signal; when the calibration mode signal indicates an off-chip calibration mode, it outputs a selection signal in a first state and an enable signal in an invalid state; or, when the calibration mode signal indicates an on-chip calibration mode, it outputs a selection signal in a second state and an enable signal in an active state.

[0077] The second selection module 132 is configured to receive a selection signal; when the selection signal is in a first state, it outputs a first calibration code as a ZQ calibration code; or, when the selection signal is in a second state, it outputs a second calibration code as a ZQ calibration code.

[0078] It should be understood that the first state and the second state refer to different logic level states, but their specific values ​​can be determined according to the actual application scenario. For example, the first state can be a high-level signal and the second state can be a low-level signal; or the first state can be a low-level signal and the second state can be a high-level signal. Similarly, the valid state and the invalid state refer to different logic level states, and their specific values ​​can also be determined according to the actual application scenario. This disclosure does not impose any limitations.

[0079] See Figure 3 This illustration shows a schematic diagram of an application scenario for a calibration control circuit 10 provided in an embodiment of this disclosure. From Figure 2 and Figure 3 As can be seen, in some embodiments, the first selection module 131 includes a first write-only register 201, the second selection module 132 includes a multiplexer 202, and the off-chip calibration module 11 includes a second write-only register group 203; wherein,

[0080] The input of the first write register 201 is used to receive the calibration mode signal, and the input of the second write register group 203 is used to receive the first calibration code ZqAdj1<5:0>.

[0081] The enable terminal of the on-chip calibration module 12 is connected to the first output terminal of the first write register 201 and is used to receive the enable signal;

[0082] The control terminal of the multiplexer 202 is connected to the second output terminal of the first write register 201 to receive the selection signal; the first input terminal of the multiplexer 202 is connected to the output terminal of the on-chip calibration module 12 to receive the second calibration code ZqAdj2<5:0>; the second input terminal of the multiplexer 202 is connected to the output terminal of the second write register group 203 to receive the first calibration code ZqAdj1<5:0>; the output terminal of the multiplexer 202 is used to output the ZQ calibration code ZqAdj<5:0>.

[0083] It should be noted that the first write register 201 can store only one bit of data. Different values ​​(0 or 1) of this data indicate either on-chip calibration mode or off-chip calibration mode, depending on the specific application scenario. The second write register group 203 needs to store multiple bits of data, depending on the number of bits in the ZQ calibration code. For example, the ZQ calibration code can include 6 bits of data, represented as <5:0>.

[0084] In addition, the inputs of the first write register 201 and the second write register group 203 are both connected to the command bus to enable related data transmission. Specifically, the user sends the calibration mode signal to the first write register 201 via the write instruction MRW to enable on-chip calibration mode or off-chip calibration mode; the user sends the first calibration code to the second write register group 203 via the write instruction MRW, which is subsequently used to set the ZQ calibration code.

[0085] It should be understood that before switching from on-chip calibration mode to off-chip calibration mode, the user should first send the first calibration code to avoid blank intervals in the ZQ calibration code after switching from on-chip calibration mode to off-chip calibration mode. In other words, if the user does not send the first calibration code first and directly switches from on-chip calibration mode to off-chip calibration mode, the second write-only register group 203 may be empty of data or contain inappropriate data (such as data from the previous off-chip calibration mode), resulting in impedance mismatch in the memory and signal errors.

[0086] It should be noted that, due to the diversity of circuit components, Figure 3The circuit structure shown is not the only option. For example, the first write register 201 may have only one output. If the invalid state of the enable signal is the same as the first state of the calibration mode signal, then both the input of the first write register 201 and the enable terminal of the on-chip calibration module 12 can be connected to the single output of the first write register 201. If the invalid state of the enable signal is different from the first state of the calibration mode signal, the relevant logic can be implemented by means of an inverter.

[0087] In some embodiments, such as Figure 2 As shown, the calibration control circuit 10 may further include a data acquisition module 14, the input terminal of which is connected to the output terminal of the mode switching module 13; wherein,

[0088] The on-chip calibration module 12 is also configured to perform ZQ self-calibration on the memory for standard environmental parameters in the second test mode to obtain the calibration code base value.

[0089] The mode switching module 13 is also configured to receive a calibration mode signal indicating the on-chip calibration mode in the second test mode, so as to output the calibration code base value.

[0090] The acquisition module 14 is configured to acquire the basic value of the calibration code, and the basic value of the calibration code is used to determine the first calibration code.

[0091] It should be noted that the embodiments of this disclosure use the acquisition module 14 to output the results of the ZQ self-calibration process in order to obtain the basic value of the calibration code. Specifically, in the second test mode, the calibration mode signal is fixedly indicated to indicate the on-chip calibration mode, so as to perform self-calibration processing on the memory under standard environmental parameters to obtain the basic value of the calibration code.

[0092] Taking a system consisting of a memory and a memory controller as an example, where each environmental parameter includes voltage and temperature, the system can enter a second test mode during a fixed phase of system initialization. The memory controller adjusts the memory to a standard voltage and temperature environment, and then controls the memory to perform ZQ self-calibration. The calibration result is output via the acquisition module 14 to obtain the calibration code base value. Alternatively, the system can also include a temperature control device. After entering the second test mode, the memory controller adjusts the memory voltage, and the temperature control device adjusts the memory temperature.

[0093] In some embodiments, combined with Figure 2 and Figure 3 It can be seen that the acquisition module 14 includes a read-only register group 204, the input of which is connected to the output of the multiplexer 202; wherein,

[0094] Read-only register group 204 is configured to acquire the output signal of multiplexer 202;

[0095] Read-only register group 204 is also configured to receive a second read instruction in the second test mode and output the calibration code base value according to the second read instruction.

[0096] It should be noted that read-only register group 204 needs to store multiple bits of data, depending on the number of bits in the ZQ calibration code. That is, the second write-only register group 203 and read-only register group 204 store the same number of bits of data. Furthermore, the input and output terminals of read-only register group 204 are also connected to the command bus. After receiving the read command MRR from the command bus, read-only register group 204 outputs the basic calibration code value.

[0097] In this way, the calibration results of the on-chip calibration module 12 can be output with the help of the read-only register group 204, so that the user can obtain the basic value of the calibration code, and then determine the appropriate first calibration code by combining the process corner parameters and the current environmental parameters of the memory.

[0098] In some embodiments, such as Figure 3 As shown, the memory also includes an output driver module 15 and a termination resistor module 16; wherein, the memory is further configured to write the ZQ calibration code into the output driver module 15 and the termination resistor module 16 to realize the resistance calibration process of the output driver module 15 and the termination resistor module 16.

[0099] As can be seen from the above, firstly, this embodiment adds two register groups: a second write register group 203 and a read-only register group 204. The user sends a write instruction MRW to write the first calibration code into the second write register group 203, and the user sends a read instruction MRR to read the basic value of the calibration code from the read-only register group 204. Secondly, this embodiment also adds a first write register 201 (which can also be a programmable fuse register, fixed before the memory leaves the factory). The user writes the calibration mode signal into the first write register 201 using the write instruction MRW. Write register 201 controls whether the ZQ calibration code is output by the on-chip calibration module 12 or the off-chip calibration module 11. Furthermore, this embodiment adds a read / write register group 172. The write register portion of read / write register group 172 receives the start-up and shutdown times sent by the user via write commands, thereby controlling the monitoring module 171 to perform process corner testing based on the start-up and shutdown times. The read register portion of read / write register group 206 stores the count value (test result signal) of the monitoring module 171, which is read out by the user sending a read command MRR. Here, for the monitoring module 207, the count value obtained in the first test mode (specified voltage, specified temperature, and specified test time interval) can be used to determine the process corner parameters so that the user can determine the first calibration code. This not only realizes a control circuit for dual on-chip and off-chip ZQ calibration selection but also helps the user quickly and reasonably determine the first calibration code.

[0100] In the aforementioned method, the user determines the first calibration code based on process corner parameters and current environmental parameters. However, other methods can be provided to assist the user in determining the first calibration code. For example, for this memory, a mapping relationship between multiple candidate calibration codes and multiple environmental parameters can be pre-established, allowing the user to directly select the first calibration code from the multiple candidate calibration codes based on the current environmental parameters.

[0101] Therefore, in some embodiments, the on-chip calibration module 12 is further configured to perform multiple ZQ self-calibration processes on the memory for multiple environmental parameters in the second test mode to obtain multiple candidate calibration codes; the mode switching module 13 is further configured to receive a calibration mode signal indicating the on-chip calibration mode in the second test mode to output multiple candidate calibration codes; the acquisition module 14 is configured to acquire multiple candidate calibration codes to establish a preset mapping relationship, and the preset mapping relationship refers to the relationship between multiple environmental parameters and multiple candidate calibration codes.

[0102] It should be noted that the embodiment of this disclosure uses the acquisition module 14 to output the results of the ZQ self-calibration process, so that users can understand the relevant values ​​of the ZQ calibration code.

[0103] In this way, during the operation of the memory, the user can determine the corresponding first calibration code by using the current environmental parameters and preset mapping relationship, and the accuracy of ZQ calibration can be guaranteed even in off-chip calibration mode.

[0104] In one specific embodiment, assuming that the environmental parameters include temperature and voltage parameters, the operation of the aforementioned calibration control circuit 10 will be specifically described using a system consisting of a memory controller and a memory as an example.

[0105] First, after the memory is manufactured, the process corner is tested through process module 17 to obtain the process corner parameters of the memory.

[0106] Secondly, during a certain stage of system initialization, the memory controller controls the memory to enter the second test mode. At this time, the calibration mode signal indicates the on-chip calibration mode, controlling the memory to operate under standard voltage and temperature parameters. The on-chip calibration module 12 then performs an on-chip ZQ self-calibration process. After the ZQ self-calibration process is completed, the basic calibration code value is read through the read-only register group 204 and provided to the user. Specifically, the user can also obtain the target coefficient values ​​(including voltage and temperature coefficients) corresponding to different process corner parameters.

[0107] Finally, during system operation, the current voltage parameter is determined by the Power Management Unit (PMU) and the current temperature parameter is determined by the Temperature Sensor. Based on the current voltage and temperature parameters, the first calibration code can be determined using the following formula: First calibration code = Calibration code base value + Voltage coefficient × (Current voltage parameter - Standard voltage parameter) + Temperature coefficient × (Current temperature parameter - Standard temperature parameter). After writing the first calibration code into the second write-only register group 203, the memory is switched to off-chip calibration mode by sending a calibration mode signal. Then, the ZQ Latch command is used to write the first calibration code into the driver (output driver module 15) and CA ODT (termination resistor module 16) of each DQ, while disabling on-chip ZQ self-calibration processing. This achieves power saving and avoids on-chip ZQ self-calibration deviation caused by environmental noise.

[0108] In another specific embodiment, to simplify operation, the user can directly obtain the preset parameter tables corresponding to different process corner parameters. These preset parameter tables describe candidate calibration codes corresponding to different temperatures and voltages under specified process corner parameters. A specific preset parameter table is shown in Table 1. Thus, during system operation, a target parameter table can be selected from multiple preset parameter tables based on the memory's process corner parameters. Then, based on the current voltage and temperature parameters, the first calibration code is directly selected from the target parameter table, thereby improving the accuracy of the first calibration code and simplifying the calculation process.

[0109] Table 1

[0110]

[0111]

[0112] It should be understood that the various parameters and calibration code values ​​in Table 1 are for illustrative purposes only and do not constitute any limitations. Additionally, the temperature parameter refers to the current temperature of the memory, and the voltage parameter refers to the power supply voltage used by the memory output driver module and the termination module.

[0113] Building upon the foregoing, the determination of the first calibration code can also be independent of process corner parameters. For example, during a certain stage of system initialization, the memory controller controls the memory to enter the second test mode, at which point the calibration mode signal indicates the on-chip calibration mode. The memory controller scans the combinations of temperature and voltage, with each scan combining one case, and performs an on-chip ZQ self-calibration process using the on-chip calibration module 12. After the ZQ self-calibration process is completed, the values ​​of the candidate calibration codes are read through the read-only register group 204. The user's System on Chip (SOC) records these values. After all combinations are scanned, the user obtains a lookup table of temperature parameters, voltage parameters, and candidate calibration codes, as shown in Table 1 above. In other words, the system needs to test the memory to directly determine the target parameter table corresponding to the memory, rather than the user selecting the target parameter table from multiple preset parameter tables based on process corner parameters. Thus, during system operation, after determining the current voltage and temperature parameters, the first calibration code can be directly determined based on the target parameter table.

[0114] In contrast, when using process corner parameters to determine the first calibration code, only one ZQ calibration process is needed during system initialization for standard environmental parameters. There is no need to perform ZQ calibration processes separately for different environmental parameters, saving a lot of time and resources.

[0115] In addition, the calibration control circuit 10 provided in this embodiment is also compatible with the conventional ZQ calibration mode, that is, during normal user operation, the memory can be controlled to be in on-chip calibration mode. At this time, the on-chip calibration module 12 performs on-chip ZQ self-calibration on the memory under certain temperature, voltage and time variation conditions as specified by JEDEC. After calibration, the second calibration code is written to the driver (output driver module 15) and CA ODT (termination resistor module 16) of each DQ using the ZQ Latch command.

[0116] In other words, to overcome the drawback that users cannot know or set the ZQ calibration code, this disclosure provides a calibration control circuit 10, which includes at least the following: On the one hand, a multiplexer controls the ZQ calibration code to use either a first calibration code (external value, user-defined) or a second calibration code (internal value, obtained from ZQ self-calibration), adapting to different application scenarios; on the other hand, a read-only register group and a second write register group are added to facilitate users reading candidate calibration codes and writing the first calibration code; furthermore, a first write register is added to allow users to select on-chip calibration mode or off-chip calibration mode, enabling quick and convenient mode switching; and finally, a process module is added, so that users can know the process corner parameters of the memory and accurately determine the first calibration code.

[0117] In summary, the embodiments of this disclosure provide a calibration control circuit that, in off-chip calibration mode, allows the user to directly send a first calibration code to determine the ZQ calibration code, eliminating the need for frequent ZQ self-calibration processing. This not only reduces power consumption but also saves system time, thereby reducing resource waste and improving the data processing performance of the memory. Furthermore, by utilizing process corner parameters, the user can quickly and reasonably determine the first calibration code, further reducing power consumption and time consumption.

[0118] In another embodiment of this disclosure, see Figure 4 This illustration shows a schematic diagram of the structural composition of an electronic device provided in an embodiment of this disclosure. For example... Figure 4 As shown, the electronic device includes a memory 301, and the memory 301 includes the aforementioned calibration control circuit 10.

[0119] Because the electronic device has a calibration control circuit 10, in the off-chip calibration mode, the user can directly send the first calibration code to determine the ZQ calibration code, without having to perform ZQ self-calibration frequently. This not only reduces power consumption but also saves system time, thereby reducing resource waste and improving the data processing performance of the memory. In addition, with the help of process corner parameters, the user can quickly and reasonably determine the first calibration code, further reducing power consumption and time consumption.

[0120] In yet another embodiment of this disclosure, see [link to relevant documentation]. Figure 5This illustrates a flowchart of a calibration control method provided in an embodiment of this disclosure. Figure 5 As shown, the method may include:

[0121] S401: In the first test mode, the memory is subjected to process corner test to obtain a test result signal, and the test result signal is used to determine the process corner parameters.

[0122] It should be noted that the calibration control method provided in this embodiment is applied to the aforementioned electronic device including memory 301, and memory 301 includes at least calibration control circuit 10. Here, according to the foregoing, memory 301 supports at least on-chip calibration mode and off-chip calibration mode.

[0123] It should be noted that process corner parameters measure the effective operating conditions of the memory, and there are slight differences between memory batches. The process corner parameters can subsequently help users determine the first calibration code, and then directly set the ZQ calibration code in off-chip calibration mode.

[0124] S402: After providing the process corner parameters to the user, receive the first calibration code sent by the user; wherein the first calibration code is determined by the user based on the current environmental parameters and process corner parameters of the memory.

[0125] S403: Receives the calibration mode signal. When the calibration mode signal indicates off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code.

[0126] Here, step S402 may still be repeated after step S403. In other words, after step S403, the user can still continue to send a new first calibration code to the electronic device.

[0127] In this way, by utilizing the current environmental parameters and process corner parameters of the memory, users can quickly and reasonably determine the first calibration code, and then directly set the ZQ calibration code using the off-chip calibration mode, reducing power consumption and saving system time.

[0128] In some embodiments, when the calibration mode signal indicates the on-chip calibration mode, the control memory performs ZQ self-calibration processing to obtain a second calibration code, and the second calibration code is determined as the ZQ calibration code.

[0129] Thus, in off-chip calibration mode, the first calibration code sent by the user is used as the ZQ calibration code to achieve impedance calibration of the memory; in on-chip calibration mode, the second calibration code obtained after ZQ self-calibration is used as the ZQ calibration code to achieve impedance calibration of the memory.

[0130] In some embodiments, when the calibration mode signal indicates an off-chip calibration mode, the method may further include:

[0131] Based on the calibration mode signal, determine the enable signal in an invalid state and the selection signal in a first state; using the enable signal in an invalid state, control the memory to stop ZQ self-calibration processing; using the selection signal in the first state, determine the first calibration code as the ZQ calibration code; or, based on the calibration mode signal, determine the enable signal in an active state and the selection signal in a second state; using the enable signal in an active state, control the memory to perform ZQ self-calibration processing; using the selection signal in the second state, determine the second calibration code as the ZQ calibration code.

[0132] It should be noted that the functions and related changes of the enable and select signals can be referred to the aforementioned... Figure 2 and Figure 3 This is understood. Thus, by introducing enable and select signals, two different calibration modes are achieved: on-chip calibration mode and off-chip calibration mode.

[0133] In some embodiments, the method further includes: detecting the current environmental parameters of the memory; providing the user with process corner parameters, the current environmental parameters, and a calibration code base value; receiving a first calibration code, wherein the first calibration code is calculated using a target coefficient value, the calibration code base value, and the current environmental parameters. Here, the target coefficient value is selected from multiple preset coefficient values ​​based on the process corner parameters, the preset coefficient values ​​are used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process corner parameters; the calibration code base value refers to the value of the first calibration code under standard environmental parameters.

[0134] In some embodiments, in the second test mode, the control calibration mode signal indicates the on-chip calibration mode; the control memory performs ZQ self-calibration processing based on standard environmental parameters to obtain the calibration code base value.

[0135] For example, assume that each environmental parameter includes voltage and temperature parameters. First, during the initialization process of the electronic device, it can automatically enter the second test mode, where the electronic device adjusts the memory to an external environment with standard voltage and temperature parameters, and controls the memory to perform ZQ self-calibration to obtain the calibration code base value. Second, during the normal operation of the electronic device, the user can send corresponding control commands, and the electronic device detects the current environmental parameters of the memory. Then, the user determines the target coefficient value from multiple preset coefficient values ​​based on the memory's process corner parameters, and calculates the current environmental parameters, the calibration code base value, and the target coefficient value to obtain the first calibration code.

[0136] In one specific embodiment, the target coefficient value includes a voltage coefficient and a temperature coefficient, the standard environmental parameters include a standard voltage parameter and a standard temperature parameter, and the current environmental parameters include the current voltage parameter and the current temperature parameter. The difference between the current voltage parameter and the standard voltage parameter is recorded as the voltage change value, and the difference between the current temperature parameter and the standard temperature parameter is recorded as the temperature change value. The first calibration code is obtained by summing the products of the calibration code base value, the voltage change value, and the voltage coefficient, as well as the products of the temperature change value and the temperature coefficient. That is, the first calibration code = calibration code base value + voltage coefficient × (current voltage parameter - standard voltage parameter) + temperature coefficient × (current temperature parameter - standard temperature parameter).

[0137] It should also be noted that the multiple preset coefficient values ​​can be provided to the user by the electronic device, or they can be obtained by the user based on the results after testing and fitting different electronic devices.

[0138] Therefore, in some embodiments, multiple preset coefficient values ​​are provided to the user by the electronic device.

[0139] Alternatively, the method may further include: in the second test mode, controlling the calibration mode signal to indicate the on-chip calibration mode; controlling the memory to perform multiple ZQ self-calibration processes based on multiple environmental parameters to obtain multiple candidate calibration codes; and performing fitting processing on the multiple environmental parameters and multiple candidate calibration codes to determine the preset coefficient value corresponding to the process corner parameter.

[0140] For example, suppose there are multiple memories, whose process corner parameters are represented as process corner parameter 1, process corner parameter 2, ..., process corner parameter n. For the memory with process corner parameter 1, the above steps are followed to control it to enter the second test mode for multiple ZQ self-calibration processes, resulting in multiple environmental parameters and multiple candidate calibration codes. Preset coefficient values ​​are fitted to the multiple environmental parameters and multiple candidate calibration codes, thus obtaining the preset coefficient values ​​corresponding to process corner parameter 1. The above steps are repeated for the memories with process corner parameters 2, ..., ..., process corner parameter n, respectively, to obtain the preset coefficient values ​​corresponding to process corner parameter 2, ..., process corner parameter n, thus obtaining the preset coefficient values ​​corresponding to different process corner parameters.

[0141] In this way, by selecting the target coefficient value through the process angle parameter, the first calibration code can be calculated based on the calibration code base value, the target coefficient value, and the current environmental parameters.

[0142] In some embodiments, to reduce the computational burden on users, preset parameter tables for different process corners can be provided to the user, allowing the user to directly determine the first calibration code based on the target parameter table. Specifically, the method may further include: detecting the current environmental parameters of the memory; providing the user with the current environmental parameters and process corner parameters; and receiving the first calibration code, wherein the first calibration code is determined through the target parameter table and the current environmental parameters. Here, the target parameter table is selected from multiple preset parameter tables based on the process corner parameters. The preset parameter tables are used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables correspond to different process corner parameters.

[0143] In this way, the target parameter table can be directly determined based on the process angle parameters, and then the required first calibration code can be selected from the target parameter table using the current environmental parameters, saving the calculation process and making it easier for users to use.

[0144] It should be noted that the multiple preset parameter tables can be provided to the user by the electronic device, or they can be summarized by the user based on the results after testing and processing different electronic devices.

[0145] Therefore, in some embodiments, multiple preset parameter tables are provided to the user by the electronic device.

[0146] Alternatively, the method may further include: in the second test mode, controlling the calibration mode signal to indicate the on-chip calibration mode; controlling the memory to perform multiple ZQ self-calibration processes based on multiple environmental parameters to obtain multiple candidate calibration codes; and determining a preset parameter table corresponding to the process corner parameters based on the multiple environmental parameters and the multiple candidate calibration codes.

[0147] For example, suppose there are multiple memories, whose process corner parameters are represented as process corner parameter 1, process corner parameter 2, ..., process corner parameter n, respectively. For the memory with process corner parameter 1, the above steps are followed to control it to enter the second test mode for multiple ZQ self-calibration processes, obtaining multiple environmental parameters and multiple candidate calibration codes, forming a preset parameter table corresponding to process corner parameter 1; the above steps are repeated for the memories with process corner parameters 2, ..., ..., process corner parameter n, respectively, to obtain the preset parameter table corresponding to process corner parameter 2, ..., the preset coefficient value corresponding to process corner parameter n, thus forming preset parameter tables corresponding to different process corner parameters.

[0148] The process corner parameter 1, process corner parameter 2, ..., process corner parameter n mentioned above can respectively characterize the typical process corner (TT corner), slow process corner (SS corner), and fast process corner (FF corner). Thus, by selecting the target parameter table through the process corner parameter, the first calibration code can be selected from the target parameter table based on the current environmental parameters.

[0149] In addition, the determination of the first calibration code may not involve process corner parameters. In some embodiments, the method further includes: detecting the current environmental parameters of the memory; presenting the current environmental parameters to the user so that the user selects the first calibration code from a plurality of candidate calibration codes according to a preset mapping relationship. Here, the preset mapping relationship indicates the relationship between the plurality of environmental parameters and the plurality of candidate calibration codes, and each environmental parameter includes a voltage parameter and / or a temperature parameter.

[0150] It should be noted that the preset mapping relationship can be stored in the electronic device or recorded by the user.

[0151] In some embodiments, the method further includes: in a second test mode, controlling a calibration mode signal to indicate an on-chip calibration mode; and controlling the memory to perform multiple ZQ self-calibration processes based on multiple environmental parameters to obtain multiple candidate calibration codes in order to establish a preset mapping relationship.

[0152] For example, assuming each environmental parameter includes voltage and temperature parameters, during the initialization process of the electronic device, it can automatically enter a second test mode. The electronic device adjusts the voltage and temperature of the memory, controlling the memory to perform ZQ self-calibration processing to obtain the corresponding candidate calibration codes. Repeating the above process under different temperature / voltage combinations yields candidate calibration codes corresponding to different environmental parameters, establishing a preset mapping relationship. Alternatively, the electronic device can also cooperate with a temperature control device for testing. That is, after entering the test mode, the electronic device adjusts the voltage of the memory to a predetermined value, while other testing devices adjust the temperature of the memory.

[0153] It should be noted that, in order to simplify the user's operation, some of the steps mentioned in the embodiments of this disclosure that are performed by the user can also be automated by software programs. For example, the electronic device can directly determine the first calibration code based on the current environmental parameters and the preset mapping relationship. Currently, software programs are highly automated, and improvements like the above do not require creative effort from those skilled in the art, so they should also be considered within the scope of protection of the embodiments of this disclosure.

[0154] In some embodiments, the method further includes: storing the first calibration code when the calibration mode signal indicates an on-chip calibration mode and a first calibration code sent by the user is received; determining the first calibration code as a ZQ calibration code after the calibration mode signal is adjusted to indicate an off-chip calibration mode; or, directly determining the received first calibration code as a ZQ calibration code when the calibration mode signal indicates an off-chip calibration mode and a first calibration code sent by the user is received.

[0155] It should be noted that before switching from on-chip calibration mode to off-chip calibration mode, the user should send the first calibration code to avoid impedance mismatch caused by the absence or inappropriateness of the first calibration code after switching from on-chip to off-chip calibration mode. Furthermore, even after the memory is in off-chip calibration mode, the user can still send a new first calibration code to update the ZQ calibration code.

[0156] In some embodiments, the method may further include: performing resistance calibration processing on the output drive module and the termination resistor module in the memory based on the ZQ calibration code.

[0157] This disclosure provides a calibration control method that, in off-chip calibration mode, allows users to directly send a first calibration code to determine the ZQ calibration code, eliminating the need for frequent ZQ self-calibration processing. This not only reduces power consumption but also saves system time, thereby reducing resource waste and improving memory data processing performance. Furthermore, by utilizing process corner parameters, users can quickly and reasonably determine the first calibration code, further reducing power consumption and time consumption.

[0158] The above are merely preferred embodiments of this disclosure and are not intended to limit the scope of protection of this disclosure. It should be noted that in this disclosure, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element. The sequence numbers of the embodiments in this disclosure are merely descriptive and do not represent the superiority or inferiority of the embodiments. The methods disclosed in the several method embodiments provided in this disclosure can be arbitrarily combined to obtain new method embodiments without conflict. The features disclosed in the several product embodiments provided in this disclosure can be arbitrarily combined to obtain new product embodiments without conflict. The features disclosed in the several method or device embodiments provided in this disclosure can be arbitrarily combined to obtain new method or device embodiments without conflict. The above are merely specific embodiments of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A calibration control circuit, characterized by, Applied to memory, including: The process module is configured to perform a process corner test on the memory in the first test mode to obtain a test result signal, and the test result signal is used to determine the process corner parameters. An off-chip calibration module is configured to receive and store a first calibration code sent by a user; wherein the first calibration code is determined by the user based on the current environmental parameters of the memory and the process corner parameters; The mode switching module is configured to receive a calibration mode signal and the first calibration code; when the calibration mode signal indicates an off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code. The process module includes a monitoring module and a read / write register group; wherein... The read / write register group is configured to receive a write instruction containing an enable time and a disable time in the first test mode, and to store the enable time and the disable time. The monitoring module is configured to perform process corner testing on the memory based on the power-on time and the power-off time in the first test mode, and obtain a test result signal. The read / write register group is also configured to acquire and store the test result signal; and to output the test result signal upon receiving a first read instruction. The process angle parameter is used to determine a target coefficient value among multiple preset coefficient values; wherein, the preset coefficient value is used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process angle parameters; During the operation of the memory, the user calculates the first calibration code based on the target coefficient value, the current environmental parameters, and the calibration code base value, where the calibration code base value refers to the value of the first calibration code under standard environmental parameters.

2. The calibration control circuit of claim 1, wherein, The calibration control circuit also includes an on-chip calibration module; wherein... The on-chip calibration module is configured to receive an enable signal; when the enable signal is valid, it performs ZQ self-calibration processing on the memory to obtain a second calibration code adapted to the current environmental parameters. The mode switching module is further configured to receive the second calibration code; when the calibration mode signal indicates the on-chip calibration mode, the second calibration code is determined as the ZQ calibration code.

3. The calibration control circuit of claim 2, wherein, The mode switching module includes a first selection module and a second selection module; wherein... The first selection module is configured to receive the calibration mode signal; when the calibration mode signal indicates an off-chip calibration mode, it outputs a selection signal in a first state and an enable signal in an invalid state; or, when the calibration mode signal indicates an on-chip calibration mode, it outputs the selection signal in a second state and the enable signal in an active state. The second selection module is configured to receive the selection signal; when the selection signal is in a first state, output the first calibration code as the ZQ calibration code; or, when the selection signal is in a second state, output the second calibration code as the ZQ calibration code.

4. The calibration control circuit of claim 3, wherein, The first selection module includes a first write register, the second selection module includes a multiplexer, and the off-chip calibration module includes a second set of write registers; wherein, The input terminal of the first write register is used to receive the calibration mode signal, and the input terminal of the second write register group is used to receive the first calibration code; The enable terminal of the on-chip calibration module is connected to the first output terminal of the first write-only register and is used to receive the enable signal; The control terminal of the multiplexer is connected to the second output terminal of the first write register and is used to receive the selection signal; the first input terminal of the multiplexer is connected to the output terminal of the on-chip calibration module and is used to receive the second calibration code; the second input terminal of the multiplexer is connected to the output terminal of the second write register group and is used to receive the first calibration code; the output terminal of the multiplexer is used to output the ZQ calibration code.

5. The calibration control circuit according to claim 4, characterized in that, The calibration control circuit also includes a data acquisition module, the input of which is connected to the output of the mode switching module; The on-chip calibration module is also configured to perform ZQ self-calibration processing on the memory for standard environmental parameters in the second test mode to obtain the calibration code base value. The mode switching module is further configured to receive the calibration mode signal indicating the on-chip calibration mode in the second test mode, so as to output the calibration code base value. The acquisition module is configured to acquire the basic value of the calibration code, and the basic value of the calibration code is used to determine the first calibration code.

6. The calibration control circuit according to claim 5, characterized in that, The acquisition module includes a read-only register group, the input of which is connected to the output of the multiplexer; wherein... The read-only register group is configured to acquire the output signal of the multiplexer; The read-only register group is also configured to receive a second read instruction in the second test mode and output the calibration code base value according to the second read instruction.

7. The calibration control circuit according to any one of claims 1-6, characterized in that, The memory further includes an output driver module and a termination resistor module; wherein... The memory is further configured to write the ZQ calibration code into the output driver module and the termination resistor module to achieve resistance calibration processing of the output driver module and the termination resistor module.

8. An electronic device, characterized in that, It includes a memory, and the memory includes the calibration control circuitry as described in any one of claims 1 to 7.

9. A calibration control circuit, characterized by Applied to memory, including: The process module is configured to perform a process corner test on the memory in the first test mode to obtain a test result signal, and the test result signal is used to determine the process corner parameters. An off-chip calibration module is configured to receive and store a first calibration code sent by a user; wherein the first calibration code is determined by the user based on the current environmental parameters of the memory and the process corner parameters; The mode switching module is configured to receive a calibration mode signal and the first calibration code; when the calibration mode signal indicates an off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code. The process module includes a monitoring module and a read / write register group; wherein... The read / write register group is configured to receive a write instruction containing an enable time and a disable time in the first test mode, and to store the enable time and the disable time. The monitoring module is configured to perform process corner testing on the memory based on the power-on time and the power-off time in the first test mode, and obtain a test result signal. The read / write register group is also configured to acquire and store the test result signal; and to output the test result signal upon receiving a first read instruction. The process angle parameter is used to select a target parameter table from multiple preset parameter tables; wherein, the preset parameter table is used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables have a corresponding relationship with different process angle parameters; During the operation of the memory, the user uses the target parameter table to determine the first calibration code corresponding to the current environmental parameters.

10. A calibration control method characterized by, Applications to electronic devices including memory, including: In the first test mode, the memory is subjected to a process corner test to obtain a test result signal, and the test result signal is used to determine the process corner parameters; After providing the process corner parameters to the user, the system receives a first calibration code sent by the user; wherein the first calibration code is determined by the user based on the current environmental parameters of the memory and the process corner parameters. Upon receiving a calibration mode signal, if the calibration mode signal indicates an off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code. The method further includes: When the calibration mode signal indicates the on-chip calibration mode, the memory is controlled to perform ZQ self-calibration processing to obtain a second calibration code, and the second calibration code is determined as the ZQ calibration code. Detect the current environmental parameters of the memory; Provide the user with the process angle parameters, the current environmental parameters, and the basic value of the calibration code; The first calibration code is received, and the first calibration code is calculated using the target coefficient value, the base value of the calibration code, and the current environmental parameters; The target coefficient value is obtained by selecting from multiple preset coefficient values ​​based on the process angle parameter. The preset coefficient value is used to indicate the relationship between the first calibration code and the environmental parameters, and different preset coefficient values ​​correspond to different process angle parameters. The calibration code base value refers to the value of the first calibration code under standard environmental parameters.

11. The calibration control method according to claim 10, wherein The method further includes: In the second test mode, the control calibration mode signal indicates the on-chip calibration mode; Based on the standard environmental parameters, the memory is controlled to perform ZQ self-calibration to obtain the basic value of the calibration code.

12. The calibration control method according to claim 10, wherein The multiple preset coefficient values ​​are provided to the user by the electronic device; Alternatively, the method may further include: In the second test mode, the control calibration mode signal indicates the on-chip calibration mode; Based on multiple environmental parameters, the memory is controlled to perform multiple ZQ self-calibration processes to obtain multiple candidate calibration codes. The multiple environmental parameters and the multiple candidate calibration codes are fitted to determine the preset coefficient value corresponding to the process angle parameter.

13. The calibration control method according to claim 10, characterized in that, The target coefficient values ​​include voltage coefficients and temperature coefficients; the standard environmental parameters include standard voltage parameters and standard temperature parameters; and the current environmental parameters include current voltage parameters and current temperature parameters. The difference between the current voltage parameter and the standard voltage parameter is recorded as the voltage change value, and the difference between the current temperature parameter and the standard temperature parameter is recorded as the temperature change value; The first calibration code is obtained by summing the product of the calibration code base value, the voltage change value and the voltage coefficient, and the product of the temperature change value and the temperature coefficient.

14. A calibration control method characterized by, Applications to electronic devices including memory, including: In the first test mode, the memory is subjected to a process corner test to obtain a test result signal, and the test result signal is used to determine the process corner parameters; After providing the process corner parameters to the user, the system receives a first calibration code sent by the user; wherein the first calibration code is determined by the user based on the current environmental parameters of the memory and the process corner parameters. Upon receiving a calibration mode signal, if the calibration mode signal indicates an off-chip calibration mode, the first calibration code is determined to be the ZQ calibration code. The method further includes: When the calibration mode signal indicates the on-chip calibration mode, the memory is controlled to perform ZQ self-calibration processing to obtain a second calibration code, and the second calibration code is determined as the ZQ calibration code. Detect the current environmental parameters of the memory; Provide the user with the current environmental parameters and the process angle parameters; The first calibration code is received, and the first calibration code is determined by the target parameter table and the current environmental parameters; The target parameter table is selected from multiple preset parameter tables based on the process angle parameter. The preset parameter tables are used to indicate the mapping relationship between different environmental parameters and different values ​​of the first calibration code, and different preset parameter tables correspond to different process angle parameters.

15. The calibration control method according to claim 14, characterized in that, The multiple preset parameter tables are provided to the user by the electronic device; Alternatively, the method may further include: In the second test mode, the control calibration mode signal indicates the on-chip calibration mode; Based on multiple environmental parameters, the memory is controlled to perform multiple ZQ self-calibration processes to obtain multiple candidate calibration codes. Based on the multiple environmental parameters and the multiple candidate calibration codes, the preset parameter table corresponding to the process angle parameter is determined.

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