Substrate processing apparatus

Abstract

The present inventive concepts provide a substrate processing apparatus. The substrate processing apparatus includes a chamber having a processing space therein, a support unit disposed within the processing space and configured to support a substrate, and a plasma generating unit configured to generate a plasma from a process gas supplied to the processing space, and wherein the plasma generating unit includes a bottom electrode member, and a top electrode member opposite the bottom electrode member, wherein the top electrode member includes an electrode plate including an electrode, a first plate made of a material different from the electrode plate, and a second plate, and wherein the second plate, the electrode plate, and the first plate are stacked on each other.

Description

Technical Field

[0001] The embodiments of the inventive concept described herein relate to a substrate processing apparatus and a substrate processing apparatus using plasma. Background Technology

[0002] To manufacture semiconductor devices, the desired pattern is formed on a substrate by performing various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning. Among the aforementioned processes, etching is a process that removes the selected heated area from the film formed on the substrate, and both wet etching and dry etching are used.

[0003] Etching apparatuses using plasma are used for dry etching. Generally, in order to generate plasma, an electromagnetic field is formed in the interior space of a chamber, and the electromagnetic field excites the process gas in the chamber to a plasma state.

[0004] Plasma refers to an ionized gaseous state composed of ions, electrons, free radicals, or similar substances. Plasma is generated by extremely high temperatures, strong electric fields, or high-frequency electromagnetic fields. In semiconductor device manufacturing processes, etching processes are performed using plasma.

[0005] In the plasma-based substrate processing equipment mentioned above, as a method to raise the temperature of the substrate, the temperature of the substrate is increased by using a heating element (heating wire) on a substrate support member on which the substrate is placed. In known methods of heating the substrate using a heater, it takes a long time to raise and lower the temperature, and it is difficult to heat the entire substrate uniformly.

[0006] To address this issue, a method is proposed that uses microwaves to anneal the substrate in the upper region of the chamber. While this method reduces the required heating time, non-uniform heat transfer occurs within the substrate, resulting in a significant temperature difference between the edge and center portions of the substrate during the process. This leads to reduced semiconductor chip productivity.

[0007] Therefore, the structural characteristics of the top window and electrodes in the chamber need to be redesigned to generate a uniform heating distribution across the entire surface of the substrate by microwaves. Summary of the Invention

[0008] An embodiment of the present invention provides a top window and electrode structure for improving heating and plasma uniformity.

[0009] The technical objectives of this invention are not limited to those described above, and other unmentioned technical objectives will be apparent to those skilled in the art from the following description.

[0010] This invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space within the chamber; a support unit disposed within the processing space and configured to support a substrate; and a plasma generation unit configured to generate plasma from processing gas supplied to the processing space; wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member includes: an electrode plate including electrodes; a first plate made of a material different from the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on top of each other.

[0011] In this embodiment, the thickness of the central portion and the thickness of the edge portion of the top electrode component are substantially equal.

[0012] In one embodiment, the electrode plate, the first plate, and the second plate are made of transparent material.

[0013] In one embodiment, the first plate is made of quartz material, and the second plate is made of an etch-resistant material.

[0014] In an embodiment, the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, carbon nanotubes (CNTs), any mixture thereof, or any stacked combination thereof.

[0015] In this embodiment, the thicknesses of the central and edge portions of the first plate, the central and edge regions of the second plate, and the central and edge regions of the electrode plate are all set to be the same.

[0016] In one embodiment, the electrode plate is positioned on top of the second plate.

[0017] This invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space within the chamber; a support unit disposed within the processing space and configured to support a substrate; and a plasma generation unit configured to generate plasma from processing gas supplied to the processing space; wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member includes: an electrode plate including electrodes; a first plate made of a material different from the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on top of each other, and the thickness of the central portion of the top electrode member is different from the thickness of the edge portion of the top electrode member.

[0018] In one embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

[0019] In one embodiment, the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

[0020] In one embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and the thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

[0021] In one embodiment, the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

[0022] In one embodiment, the electrode plate, the first plate, and the second plate are made of transparent material.

[0023] In one embodiment, the first plate is made of quartz material, and the second plate is made of an etch-resistant material.

[0024] In an embodiment, the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, CNTs, any mixture thereof, or any stacked combination thereof.

[0025] This invention provides a substrate processing apparatus. The substrate processing apparatus includes: a chamber having a processing space within the chamber; a support unit disposed within the processing space and configured to support a substrate; and a plasma generation unit configured to generate plasma from processing gas supplied to the processing space; wherein the plasma generation unit includes: a bottom electrode member; and a top electrode member opposite to the bottom electrode member, wherein the top electrode member includes: an electrode plate including electrodes; a first plate made of a material different from the electrode plate; and a second plate, wherein the second plate, the electrode plate, and the first plate are stacked on top of each other, and a first thickness of a central portion of the top electrode member is different from a second thickness of an edge portion of the top electrode member, and the difference between the first thickness and the second thickness is 500% or less of the second thickness, or 500% or less of the first thickness.

[0026] In one embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

[0027] In one embodiment, the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

[0028] In this embodiment, the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate.

[0029] The thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

[0030] In one embodiment, the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

[0031] In one embodiment, the electrode plate, the first plate, and the second plate are made of transparent material.

[0032] In one embodiment, the first plate is made of quartz material, and the second plate is made of an etch-resistant material.

[0033] In an embodiment, the electrode plate is a transparent electrode that maintains transparency, and the transparent electrode is made of at least one of the following: ITO, AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, CNTs, any mixture thereof, or any stacked combination thereof.

[0034] According to embodiments of the present invention, heating uniformity and plasma uniformity across the entire surface of the substrate can be improved.

[0035] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be obvious to those skilled in the art from the following description. Attached Figure Description

[0036] The above and other purposes and features will become apparent from the following description with reference to the accompanying drawings, in which similar reference numerals refer to similar parts unless otherwise specified.

[0037] Figure 1 A substrate processing apparatus according to an embodiment of the concept of the present invention is shown.

[0038] Figure 2 A top electrode component is shown according to an embodiment of the concept according to the present invention.

[0039] Figures 3 to 6 A top electrode component is shown according to another embodiment of the concept according to the present invention.

[0040] List of reference numerals

[0041] 10: Substrate processing equipment

[0042] 100: Process Chamber

[0043] 103: Exhaust port

[0044] 104: Opening

[0045] 110: Process Chamber

[0046] 121: Exhaust pipe

[0047] 122: Pump

[0048] 130: Lining Unit

[0049] 158: Through hole

[0050] 200: Support unit

[0051] 210: Support plate

[0052] 220: Bottom electrode component

[0053] 240: Electrostatic Chuck

[0054] 260: Ring Assembly

[0055] 262: Focusing ring

[0056] 264: Insulating ring

[0057] 270: Gas supply pipeline unit

[0058] 272: Gas supply source

[0059] 274: Gas supply pipeline

[0060] 282: Heating component

[0061] 284: Cooling components

[0062] 300: Gas supply unit

[0063] 310: Gas storage unit

[0064] 320: Gas supply pipeline

[0065] 322: Valve

[0066] 330: Gas inlet port

[0067] 400: Plasma Generation Unit

[0068] 420: Top electrode component

[0069] 421: First board

[0070] 422: Electrode plate

[0071] 423: Second board

[0072] 429: Grounding

[0073] 460: High-frequency power supply

[0074] 500: Heating unit

[0075] t b :thickness

[0076] t a :thickness

[0077] t 421 :thickness

[0078] t 422 :thickness

[0079] t 423 :thickness Detailed Implementation

[0080] Other advantages and features of the present invention, as well as methods for achieving these advantages and features, will become apparent from the following detailed description of the embodiments in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and these embodiments are provided only to ensure the completeness of the disclosure and to fully inform those skilled in the art of the scope of the invention.

[0081] Even if not defined herein, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly accepted by those skilled in the art. Terms defined in a general dictionary may be interpreted as having the same meaning as the relevant technical and / or textual meaning of this application, and shall not be conceptualized or overly formalized herein unless clearly defined.

[0082] Terms such as first, second, and similar may be used to describe various components, but components should not be limited by the terms. The terms are used only for the purpose of distinguishing components. For example, a first component may be referred to as a second component without departing from the scope of the invention, and similarly, a second component may be referred to as a first component.

[0083] Singular expressions include plural expressions unless otherwise clearly implied. Furthermore, shapes and sizes in the accompanying drawings may be exaggerated for clarity of interpretation.

[0084] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the concept of the invention. As used herein, the singular forms “a” and “described” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should be further understood that the terms “comprise” and / or “include”, when used in this specification, specify the presence of stated features, integers, steps, operations, components, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, components, components, and / or groups thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Furthermore, the term “illustrative” is intended to refer to an example or illustration.

[0085] In embodiments of the present invention, a substrate processing apparatus for using plasma etching of a substrate will be described. However, the technical features of the present invention are not limited thereto, and can be applied to various types of apparatus for using plasma processing of a substrate W and / or various types of apparatus where a substrate placed on a support unit is plasma processed.

[0086] Furthermore, in embodiments of the present invention, an electrostatic chuck serving as a support unit will be described as an example. However, the present invention is not limited to this, and the support unit may be used to support the substrate by mechanical clamps or by vacuum.

[0087] Figure 1 The illustration shows a substrate processing apparatus according to an embodiment of the concept of the present invention.

[0088] See Figure 1The substrate processing apparatus 10 may include a process chamber 100, a support unit 200, a gas supply unit 300, a plasma generation unit 400, and a heating unit 500. The substrate processing apparatus 10 uses plasma to process the substrate W.

[0089] Process chamber 100 has space for performing processes therein. A vent 103 is formed on the bottom side of process chamber 100. Vent 103 is connected to a vent line 121 on which pump 122 is mounted. Reaction byproducts generated during the process and gases remaining in process chamber 100 are discharged to the outside of process chamber 100 via vent 103 and vent line 121. Furthermore, the internal space of process chamber 100 is depressurized to a predetermined pressure by this venting process. In one embodiment, vent 103 may be located in a position to communicate directly with a through-hole 158 of liner unit 130, which will be described later.

[0090] An opening 104 is formed on the side wall of the process chamber 100. The opening 104 serves as a passageway for the substrate to enter and exit the process chamber 100. The opening 104 is opened and closed by a door assembly (not shown). According to one embodiment, the door assembly (not shown) has an outer door, an inner door, and a connecting plate. The outer door is disposed on the outer wall of the process chamber. The inner door is disposed on the inner wall of the process chamber. The outer door and the inner door are fixedly coupled to each other by the connecting plate. The connecting plate is provided to extend from inside the process chamber to the outside via the opening. A door actuator moves the outer door in a vertical up / down direction. The door actuator may include a cylinder or a motor.

[0091] The support unit 200 is located in the bottom region inside the process chamber 100. The support unit 200 supports the substrate W by electrostatic force. In contrast, the support unit 200 can support the substrate W in various ways, such as mechanical clamps.

[0092] The support unit 200 may include a support plate 210, a ring assembly 260, and a gas supply line unit 270. The substrate W is placed on the support plate 210. The support plate 210 has a base 220 and an electrostatic chuck 240. The electrostatic chuck 240 supports the substrate W on its top surface by electrostatic force. The electrostatic chuck 240 is fixedly coupled to the base 220.

[0093] The ring assembly 260 has a ring shape. The ring assembly 260 is provided to surround the circumference of the support plate 210. In one embodiment, the ring assembly 260 is provided to surround the circumference of the electrostatic chuck 240. The ring assembly 260 supports the edge region of the substrate W. According to one embodiment, the ring assembly 260 has a focusing ring 262 and an insulating ring 264. The focusing ring 262 is provided to surround the electrostatic chuck 240 and focus plasma onto the substrate W. The insulating ring 264 is provided to surround the focusing ring 262. If necessary, the ring assembly 260 may include an edge ring (not shown) that is disposed in close contact with the circumference of the focusing ring 262 to prevent damage to the side surfaces of the electrostatic chuck 240 by plasma. The structure of the ring assembly 260 can be modified in various ways, differing from the description above.

[0094] The gas supply line unit 270 includes a gas supply source 272 and a gas supply line 274. The gas supply line 274 is provided to supply gas to the space between the ring assembly 260 and the electrostatic chuck 240. The gas supply line 274 supplies gas to remove foreign matter remaining on the top surface of the ring assembly 260 or in the edge region of the electrostatic chuck 240. In this embodiment, the gas may be nitrogen (N2). Other gases or cleaning agents may be supplied as needed. The gas supply line 274 may be formed to connect between the focusing ring 262 and the electrostatic chuck 240 within the support plate 210. Alternatively, the gas supply line 274 may be disposed within the focusing ring 262 and bendable to connect between the focusing ring 262 and the electrostatic chuck 240.

[0095] According to an embodiment, the electrostatic chuck 240 may be made of ceramic material, the focusing ring 262 may be made of silicon material, and the insulating ring 264 may be made of quartz material. A heating element 282 and a cooling element 284 for maintaining the substrate W at the processing temperature during the process may be disposed in the electrostatic chuck 240 or the base 220. The heating element 282 may be a heating wire. The cooling element 284 may be a cooling line through which refrigerant flows. According to an embodiment, the heating element 282 may be disposed in the electrostatic chuck 240, and the cooling element 284 may be disposed in the base 220.

[0096] A gas supply unit 300 supplies process gas to the process chamber 100. The gas supply unit 300 includes a gas storage unit 310, a gas supply line 320, and a gas inlet port 330. The gas supply line 320 connects the gas storage unit 310 and the gas inlet port 330. The gas supply line 320 supplies process gas stored in the gas storage unit 310 to the gas inlet port 330. A valve 322 for opening and closing the passage or adjusting the flow rate of fluid flowing through the passage may be installed at the gas supply line 320.

[0097] The plasma generation unit 400 generates plasma from the process gas held in the discharge space. The discharge space corresponds to the space above the support unit 200 in the process chamber 100. The plasma generation unit 400 may have a capacitively coupled plasma source.

[0098] The plasma generation unit may include a top electrode component 420, a bottom electrode component, and a high-frequency power supply 460. The base is provided in a metallic material. In an embodiment of the present invention, the base is configured as the bottom electrode component 220. The top electrode component 420 and the bottom electrode component 220 may be arranged to face each other in an up / down direction.

[0099] The top electrode component 420 according to the concept of the present invention will be referred to Figures 2 to 6 As described later. The plasma generation unit according to the concept of the present invention can generate plasma by applying an RF voltage to the top electrode member 420 or the bottom electrode member 220, or both the top electrode member 420 and the bottom electrode member 220, to generate an electric field between the top electrode member 420 and the bottom electrode member 220.

[0100] The top electrode component 420 according to the present invention may have a structure including a first plate, an electrode plate and a second plate, such that microwaves generated by the heating unit 500 can be delivered to the substrate without loss.

[0101] The detailed structure of the top electrode component 420 according to the present invention will be discussed later. Figures 2 to 6 describe.

[0102] The plasma generation unit 400 according to the present invention may include a nozzle and a ring assembly, which may be formed in the second plate structure of the top electrode member, to be described later. The nozzle may be positioned above the electrostatic chuck 240 and may have a diameter larger than the diameter of the electrostatic chuck 240. An orifice for injecting gas may be formed at the nozzle. The ring assembly is disposed to surround the nozzle. The ring assembly may be configured to be in close contact with the nozzle.

[0103] According to one embodiment, the top electrode member 420 may be grounded 429, and the high-frequency power supply 460 may be connected to the bottom electrode member 220. In some embodiments, the high-frequency power supply 460 may be connected to the top electrode member 420, and the bottom electrode member 220 may be grounded. In some embodiments, the high-frequency power supply 460 may be connected to both the top electrode member 420 and the bottom electrode member 220. According to one embodiment, the high-frequency power supply 460 may continuously supply power or pulsed power to the top electrode member 420 and / or the bottom electrode member.

[0104] The heating unit 500 can supply microwaves to anneal the substrate on the support unit 200. Since the wavelength of microwaves is much longer than the thickness and spacing of the metal wiring layers of the semiconductor chip, the depth to which microwaves penetrate into the metal material is less than a few μm. According to the embodiment, the following effect exists: the surface temperature of the heated substrate or grain is rapidly increased to the target temperature by microwave heating treatment.

[0105] The heating unit 500 may include a waveguide to direct microwaves into the process chamber 100. The heating unit 500 may apply microwaves with a frequency of 1 to 5 GHz. According to embodiments of the present invention, since the surface of the substrate is selectively heated by microwaves, the rate of temperature increase and cooling is rapid, and the surface of the substrate can be heated to the target temperature in a short time, thereby shortening the processing time.

[0106] According to embodiments, the heating unit 500 according to the present invention can be provided as a heating processing unit using microwaves. Alternatively, the heating unit 500 according to the present invention can be provided as a heating processing unit using lasers. In the present invention, heating sources such as microwaves and lasers can heat the substrate via a top electrode member 420. The top electrode member 420 can be made of a transparent material that allows light to pass through.

[0107] Figure 2 The illustration shows a top electrode component 420 according to an embodiment of the concept of the present invention.

[0108] In this invention, a top electrode component 420 including transparent electrodes is proposed to improve heating uniformity and plasma uniformity of the substrate. The top electrode component 420 according to this invention may include: an electrode plate 422 including electrodes, a first plate 421 and a second plate 423 made of a material different from that of the electrode plate 422. According to an embodiment, the top electrode component 420 may be provided by stacking the second plate 423, the electrode plate 422, and the first plate 421.

[0109] See Figures 2 to 6 The illustration shows an embodiment in which the top electrode component 420 can be stacked in the order of the second plate 423, the electrode plate 422, and the first plate 421. However, the stacking order is not limited to this, and the second plate 423, the first plate 421, and the electrode plate 422 can be stacked in this order or any other order.

[0110] In the following text, as an example, a top electrode component 420 stacked in the order of second plate 423, electrode plate 422 and first plate 421 will be described.

[0111] The top electrode component 420 according to the present invention may include an electrode plate 422 serving as a top electrode. A grounded or high-frequency power supply may be connected to the electrode plate 422. The electrode plate 422 may include a transparent electrode. A second plate 423 may be configured as an etch-resistant material to prevent etching of the material during plasma processing. According to an embodiment, the second plate 423 may be provided as a structure including a nozzle. However, this is merely an example, and the second plate 423 may be configured as an etch-resistant material without including a nozzle. A first plate 421 may serve as a dielectric window. The first plate 421 may be a transparent nanowire. According to an embodiment, the electrode plate 422, the first plate 421, and the second plate 423 included in the top electrode component 420 may be configured as transparent materials, allowing energy provided by the self-heating unit 500 to pass through.

[0112] According to an embodiment, electrode plate 422 may be a transparent electrode formed of indium tin oxide (ITO). According to an embodiment, electrode plate 422 may be any of the following: indium tin oxide (ITO), manganese oxide (MnO), carbon nanotubes (CNT), zinc oxide (ZnO), indium zinc oxide (IZO), antimony tin oxide (ATO), SnO2, IrO2, RuO2, dielectric / metal / dielectric multilayer (SnO2 / Ag / SnO2), graphene, any mixture thereof, or any stacked combination thereof. That is, electrode plate 422 may be made of a transparent conductive material, thereby increasing microwave transmittance.

[0113] According to an embodiment, the first plate 421 may be made of quartz material. According to an embodiment, the first plate 421 may be SiO2. According to an embodiment, the second plate 423 may be made of an etching-resistant material. According to an embodiment, the second plate 423 may be any of the following: Y2O3, yttrium-stabilized zirconia (YSZ, ZrO2 / Y2O3), or yttrium aluminum garnet (YAG, Y3Al5O3). 12 The second plate 423 may be made of a material that is transparent, plasma-resistant, and etch-resistant. Therefore, the second plate 423 may have excellent conductivity and provide protection for the electrode plate 422.

[0114] according to Figure 2 In this embodiment, the thickness of the central portion and the edge portion of the top electrode member 420 can be substantially equal. Figure 2 In the middle, the thickness of the central part is determined by t b The indication, and the thickness of the edge portion is determined by t a Instructions. See also Figure 2 The thickness of the central portion and the thickness of the edge portion can be the same. According to the embodiment, the thickness t of the first plate 421... 421 (Thickness of the edge portion of the first plate 421), thickness t of the second plate 423 422 (Thickness of the edge portion of the second plate 423) and thickness t of the electrode plate 422 423 The thickness of the edge portion of the electrode plate 422 can be the same. According to the embodiment, the center and edge portions of the first plate 421, the center and edge portions of the second plate 423, and the center and edge portions of the electrode plate 422 can have the same thickness.

[0115] like Figure 2 As illustrated, using a top electrode member 420 with three vertically stacked layers, compared to an electrode member with only a single layer, allows the heat applied by the heating unit 500 to be easily delivered to the process chamber 110, and protects the top electrode member 420 from external environmental influences.

[0116] According to one embodiment, electrode plate 422 may be placed on top of second plate 423 and is thus protected from plasma etching.

[0117] Figures 3 to 6 The illustration shows a top electrode component 420 according to another embodiment of the concept of the present invention.

[0118] according to Figures 3 to 6 In the implementation method, the materials of the first plate 421, the second plate 423, and the electrode plate 422 are as described in the reference. Figure 2 The descriptions are identical, and therefore any repetitive descriptions will be omitted. Figures 3 to 6 In the embodiments shown, the top electrode member 420 may have the same characteristics as illustrated in the diagram. Figure 2 The different thickness profiles in the middle.

[0119] See Figures 3 to 6 The thickness t of the central portion of the top electrode component 420 b And the thickness t of the edge portion a Provided in different locations. This thickness difference between the edge portion and the center portion of the top electrode member 420 may be caused by the electrode plate 422, the first plate 421 and / or the second plate 423.

[0120] according to Figure 3In this embodiment, the first plate 421 may have a non-uniform thickness; for example, the thickness of the central portion and the edge portion of the first plate 421 may be provided differently. The electrode plate 422 and the second plate 423 may have a uniform thickness and may further have a flat top surface and a flat bottom surface. The first plate 421 may have a flat bottom surface and a curved (convex) top surface. Therefore, in the top electrode member 420, the thickness t at the center... b The thickness t may differ from the edge thickness. a For example, the thickness t at the center b Thickness t greater than the edge a .

[0121] according to Figure 4 In this embodiment, the electrode plate 422 may have a non-uniform thickness; for example, the thickness of the central portion and the edge portion of the electrode plate 422 may be provided differently. The first plate 421 and the second plate 423 may have a uniform thickness, while the first plate 421 may have curved top and bottom surfaces, but the second plate 423 may have flat top and bottom surfaces. The electrode plate 422 may have a curved (protruding) top surface and a flat bottom surface. Therefore, in the top electrode member 420, the thickness t at the center... b The thickness t may differ from the edge thickness. a For example, the thickness t at the center b Thickness t greater than the edge a .

[0122] according to Figure 5 In this embodiment, the first plate 421 and the electrode plate 422 may have non-uniform thicknesses. The thickness of the central portion and the edge portion of the electrode plate 422 may be different, and the thickness of the central portion and the edge portion of the first plate 421 may be set differently. The first plate 421 may have curved top and bottom surfaces, such as convex top and bottom surfaces (convex lens shape), whereby the thickness gradually decreases from the center to the edge. The electrode plate 422 may have a recessed top surface that mates with the convex bottom surface of the first plate 421. The second plate 423 has a uniform thickness beneath its flat top and bottom surfaces. Therefore, in the top electrode member 420, the thickness t at the center is... b The thickness t may differ from the edge thickness. a For example, the thickness t at the center b Thickness t greater than the edge a .

[0123] according to Figure 6In one embodiment, the second plate 423 may have a non-uniform thickness; for example, the thickness of the central portion and the edge portion of the second plate 423 may be provided differently. The second plate 423 may have a flat bottom surface and a curved (protruding) top surface, thereby the thickness of the second plate 423 may gradually decrease from the center to the edge. The first plate 421 and the electrode plate 422 may have a uniform thickness, and the first plate 421 may have a curved top surface and a bottom surface (a protruding top surface and a recessed bottom surface), and the electrode plate 422 may have a curved (protruding) top surface that mates with the recessed bottom surface of the first plate 421, and a curved (recessed) bottom surface that mates with the protruding top surface of the second plate 423. Therefore, in the top electrode member 420, the thickness t at the center... b The thickness t may differ from the edge thickness. a For example, the thickness t at the center b Thickness t greater than the edge a .

[0124] According to the embodiment, the first thickness of the central portion of the top electrode member 420 and the second thickness of the edge portion of the top electrode member 420 can be set differently, and the difference between the first thickness and the second thickness can be 500% or less of the second thickness, or 500% or less of the first thickness. In this case, heat transfer can be performed uniformly without significantly changing the structure.

[0125] That is, according to Figures 3 to 6 In accordance with the concept of this invention, the thicknesses of the central and edge portions of the top electrode member 420 are set differently, thereby compared to Figure 2 This implementation method provides more uniform heat transfer across the entire substrate. More specifically, in Figures 3 to 6 In this embodiment, the thicknesses of the central portion and the edge portion are different from each other, thereby causing the thermal conductivity to differ between the central portion and the edge portion, resulting in uneven heat transfer to the entire substrate. Furthermore, by making the thicknesses of the central portion and the edge portion different, the dielectric constant can also differ between the central portion and the edge portion, allowing plasma to penetrate the entire substrate and be uniformly excited.

[0126] According to the concept of the present invention, it is possible to use... Figure 2 This implementation method transmits microwaves completely to the substrate without heat loss. According to this implementation method, in... Figure 2 In the implementation of this method, when microwaves are applied, equal heat transfer for each location may not be possible, and therefore the heat transfer efficiency may vary for each location of the substrate.

[0127] According to the concept of the present invention, the following effect exists: via Figures 3 to 6The implementation method ensures that the thickness of the central and edge portions differs from each other, thus guaranteeing heat transfer and plasma inhomogeneity. Therefore, uniform transfer to the bottom portion of the top electrode member 420 can be induced, thereby providing uniform heat transfer and thus increasing the productivity of the semiconductor chip.

[0128] The structure of the top electrode member 420 according to the concept of the present invention is not limited to... Figures 2 to 6 The implementation method. In Figures 2 to 6 In the example where the icon is set to a variable thickness, the position and material of the electrode plate 422 can also be set differently, except for the thickness. Furthermore, in... Figures 2 to 6 The illustration shows an implementation where the central portion is thicker than the edge portion, but depending on the heat transfer conditions, a thicker edge portion can be provided compared to the central portion.

[0129] The effects of the present invention are not limited to those described above, and any effects not mentioned can be clearly understood by those skilled in the art from the specification and accompanying drawings.

[0130] Although preferred embodiments of the present invention have been illustrated and described to date, the present invention is not limited to the specific embodiments described above, and it should be noted that those skilled in the art can implement the present invention in various ways without departing from the essence of the present invention as claimed in the claims, and modifications should not be interpreted in isolation from the technical spirit or vision of the present invention.

Claims

1. A substrate processing apparatus, comprising: A chamber having processing space; Support unit, the support unit being disposed within the processing space and configured to support the substrate; and A plasma generation unit configured to generate plasma from the processing gas supplied to the processing space; The plasma generation unit comprises: Bottom electrode components; and The top electrode component is opposite to the bottom electrode component. The top electrode component comprises: Electrode plates including electrodes; A first plate made of a material different from the electrode plate; and The second board, The second plate, the electrode plate, and the first plate are stacked on top of each other in sequence, with the second plate being closer to the processing space; The substrate processing apparatus further includes a heating unit disposed on the upper part of the top electrode member, the heating unit being capable of applying microwaves to heat the substrate on the support unit through the top electrode member; The electrode plate, the first plate, and the second plate are made of a transparent material that is transparent to the microwave.

2. The substrate processing apparatus of claim 1, wherein the thickness of the central portion and the thickness of the edge portion of the top electrode member are substantially equal.

3. The substrate processing apparatus of claim 1, wherein the first plate is provided as a quartz material, and the second plate is provided as any of the following: Y2O3, yttrium stabilized zirconia (YSZ), yttrium aluminum garnet (YAG), Al2O3, Cr2O3, Nb2O5, Si3N3, any mixture thereof, or any stacked combination thereof.

4. The substrate processing apparatus of claim 3, wherein the electrode plate is a transparent electrode that is transparent to the microwave, the transparent electrode being made of at least one of the following: ITO, AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, CNTs, any mixture thereof, and any stacking combination thereof.

5. The substrate processing apparatus according to any one of claims 2 to 4, wherein the thickness of the central portion and edge portion of the first plate, the thickness of the central portion and edge region of the second plate, and the thickness of the central portion and edge region of the electrode plate are set to be the same.

6. A substrate processing apparatus, comprising: A chamber having processing space; Support unit, the support unit being disposed within the processing space and configured to support the substrate; and A plasma generation unit, configured to generate plasma from the processing gas supplied to the processing space. The plasma generation unit comprises: Bottom electrode components; and The top electrode component is opposite to the bottom electrode component. The top electrode component comprises: Electrode plates including electrodes; A first plate made of a material different from the electrode plate; and The second board, The second plate, the electrode plate, and the first plate are stacked sequentially on top of each other, with the second plate closer to the processing space; and The thickness of the central portion of the top electrode component is different from the thickness of the edge portion of the top electrode component; The substrate processing apparatus further includes a heating unit disposed on the upper part of the top electrode member, the heating unit being capable of applying microwaves to heat the substrate on the support unit through the top electrode member; The electrode plate, the first plate, and the second plate are made of a transparent material that is transparent to the microwave.

7. The substrate processing apparatus of claim 6, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

8. The substrate processing apparatus of claim 6, wherein the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

9. The substrate processing apparatus of claim 6, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and the thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

10. The substrate processing apparatus of claim 6, wherein the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

11. The substrate processing apparatus of claim 6, wherein the first plate is provided as a quartz material and the second plate is provided as any of the following: Y2O3, yttrium stabilized zirconia (YSZ), yttrium aluminum garnet (YAG), Al2O3, Cr2O3, Nb2O5, Si3N3, any mixture thereof, or any stacked combination thereof.

12. The substrate processing apparatus of claim 11, wherein the electrode plate is a transparent electrode that is transparent to the microwave, the transparent electrode being made of at least one of the following: ITO, AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, CNTs, any mixture thereof, and any stacking combination thereof.

13. A substrate processing apparatus, comprising: A chamber having processing space; Support unit, the support unit being disposed within the processing space and configured to support the substrate; and A plasma generation unit, configured to generate plasma from the processing gas supplied to the processing space. The plasma generation unit comprises: Bottom electrode components; and The top electrode component is opposite to the bottom electrode component. The top electrode component comprises: Electrode plates including electrodes; A first plate made of a material different from the electrode plate; and The second board, The second plate, the electrode plate, and the first plate are stacked on top of each other in sequence, with the second plate being closer to the processing space; The first thickness of the central portion of the top electrode component is different from the second thickness of the edge portion of the top electrode component, and The difference between the first thickness and the second thickness is 500% or less than 500% of the second thickness, or is 500% or less than 500% of the first thickness; The substrate processing apparatus further includes a heating unit disposed on the upper part of the top electrode member, the heating unit being capable of applying microwaves to heat the substrate on the support unit through the top electrode member; The electrode plate, the first plate, and the second plate are made of a transparent material that is transparent to the microwave.

14. The substrate processing apparatus of claim 13, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge portion of the electrode plate.

15. The substrate processing apparatus of claim 13, wherein the thickness of the central portion of the first plate is different from the thickness of the edge portion of the first plate.

16. The substrate processing apparatus of claim 13, wherein the thickness of the central portion of the electrode plate is different from the thickness of the edge region of the electrode plate, and The thickness of the central portion of the first plate is different from the thickness of the edge region of the first plate.

17. The substrate processing apparatus of claim 13, wherein the thickness of the central portion of the second plate is different from the thickness of the edge region of the second plate.

18. The substrate processing apparatus of claim 13, wherein the first plate is provided as a quartz material and the second plate is provided as any of the following: Y2O3, yttrium stabilized zirconia (YSZ), yttrium aluminum garnet (YAG), Al2O3, Cr2O3, Nb2O5, Si3N3, any mixture thereof, or any stacked combination thereof.

19. The substrate processing apparatus of claim 18, wherein the electrode plate is a transparent electrode that is transparent to the microwave, the transparent electrode being made of at least one of the following: ITO, AZO, FTO, ATO, SnO2, ZnO, IrO2, RuO2, graphene, metal nanowires, CNTs, any mixture thereof, and any stacking combination thereof.

Images