Inductors and methods of forming the same

Abstract

An inductor and a method for forming the same, wherein the inductor comprises: a substrate comprising an inductor device region; a first shielding structure on the inductor device region, the first shielding structure comprising a main shielding layer, a first contact structure connected to the main shielding layer, and a first guard ring surrounding the main shielding layer, the main shielding layer being made of a same material as or a different material from the first contact structure; a second shielding structure on the first shielding structure, the second shielding structure being in communication with the main shielding layer through the first contact structure, the second shielding structure further comprising a second guard ring in communication with the first guard ring; and an inductor coil on the second shielding structure. The inductor has a high quality factor Q, thereby having a high working efficiency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically to an inductor and a method for forming the same. Background Technology

[0002] An inductor is a component that can convert electrical energy into magnetic energy and store it. It is widely used in radio frequency circuit devices.

[0003] The quality factor Q is an important physical quantity characterizing the efficiency of an inductor. It refers to the ratio of the inductive reactance to the equivalent loss resistance of an inductor when operating under AC voltage at a certain frequency. The higher the quality factor Q of an inductor, the lower its losses and the higher its efficiency.

[0004] The basic components of an inductor typically include a coil and a shield. The shield is used to shield the magnetic field generated by the inductor during operation, thereby preventing other circuit components from being affected.

[0005] However, under current technology, the shield is usually made of metal, and the presence of the metal shield will reduce the quality factor Q of the inductor, thus affecting the inductor's operating efficiency. Summary of the Invention

[0006] The technical problem solved by the present invention is to provide an inductor and a method for forming the same, which improves the quality factor Q of the inductor and enhances the working efficiency of the inductor.

[0007] To solve the above-mentioned technical problems, the present invention provides an inductor, comprising: a substrate, the substrate including an inductor device region; a first shielding structure located on the inductor device region, the first shielding structure including a main shielding layer, a first contact structure connected to the main shielding layer, and a first protective ring surrounding the main shielding layer, wherein the material of the main shielding layer is the same as or different from the material of the first contact structure; a second shielding structure located on the first shielding structure, the second shielding structure being connected to the main shielding layer through the first contact structure, the second shielding structure further including a second protective ring connected to the first protective ring; and an inductor coil located on the second shielding structure.

[0008] Optionally, the main shielding layer and the first contact structure are located in the same layer; the main shielding layer and the substrate are further provided with a first dielectric layer, and the first contact structure and the substrate are further provided with a second dielectric layer.

[0009] Optionally, the resistance of the main shielding layer is greater than the resistance of the first contact structure.

[0010] Optionally, the material of the main shielding layer includes polycrystalline silicon.

[0011] Optionally, the material of the first contact structure may include metal.

[0012] Optionally, the surface pattern of the inductor region is a centrally symmetrical pattern; the projection patterns of the first shielding structure and the second shielding structure on the substrate are located within the surface range of the inductor region.

[0013] Optionally, the centrally symmetric shape includes an annular, circular, rectangular, or octagonal shape.

[0014] Optionally, the projection pattern of the first contact structure on the substrate surface is a first pattern, and the axis of symmetry of the first pattern coincides with the axis of symmetry of the surface pattern of the inductor device region.

[0015] Optionally, the material of the second shielding structure includes metal.

[0016] Optionally, the second shielding structure includes: a plurality of ring structures and a connecting wire structure that connects the ring structures.

[0017] Optionally, the projection pattern of the first contact structure on the substrate surface is a first pattern, and the projection pattern of the connecting line structure on the substrate surface is a second pattern, wherein the axis of symmetry of the first pattern coincides with the axis of symmetry of the second pattern.

[0018] Optionally, the ratio of the size of the first graphic along the axis of symmetry to the size of the second graphic along the axis of symmetry is greater than 1:4.

[0019] Optionally, the first contact structure is connected to the connecting line structure via a first conductive plug.

[0020] Optionally, when the number of the ring structures is greater than 1, the ring structures are arranged in concentric rings.

[0021] Optionally, the first protective ring includes a first protective layer and a second contact structure, wherein the resistance of the first protective layer is greater than the resistance of the second contact structure.

[0022] Optionally, the second contact structure is connected to the second protective ring via a second conductive plug.

[0023] Optionally, the inductor device region has a bottom substrate shielding structure.

[0024] Accordingly, the present invention also provides a method for forming an inductor, comprising: providing a substrate, the substrate including an inductor device region; forming a first shielding structure located on the inductor device region, the first shielding structure including a main shielding layer, a first contact structure connected to the main shielding layer, and a first protective ring surrounding the main shielding layer, wherein the material of the main shielding layer is the same as or different from the material of the first contact structure; forming a second shielding structure located on the first shielding structure, the second shielding structure being connected to the main shielding layer through the first contact structure, the second shielding structure further including a second protective ring connected to the first protective ring; and forming an inductor coil located on the second shielding structure.

[0025] Optionally, the resistance of the main shielding layer is greater than the resistance of the first contact structure.

[0026] Optionally, the material of the main shielding layer includes polycrystalline silicon.

[0027] Optionally, the material of the first contact structure may include metal.

[0028] Optionally, the first protective ring includes a first protective layer and a second contact structure, wherein the resistance of the first protective layer is greater than the resistance of the second contact structure.

[0029] Optionally, the method for forming the first shielding structure includes: forming an initial gate structure located on the inductor device region, the initial gate structure including a main shielding region, a first contact region, and a first guard ring region, the first guard ring region including a first guard layer region and a second contact region; removing the initial gate structure in the first contact region and the second contact region to form a first gate opening, a second gate opening, a main shielding layer located in the main shielding region, and a first guard layer located in the first guard layer region; and forming a first contact structure and a second contact structure in the first gate opening and the second gate opening.

[0030] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0031] In the inductor provided by the technical solution of the present invention, since the material of the main shielding layer is the same as or different from the material of the first contact structure, by selecting appropriate materials for the main shielding layer and the first contact structure, the energy loss of the inductor can be reduced and the quality factor Q of the inductor can be improved while ensuring good electrical contact performance between the second shielding structure and the first shielding structure.

[0032] Furthermore, the resistance of the main shielding layer in the first shielding structure is greater than the resistance of the first contact structure, and the second shielding structure is connected to the main shielding layer through the first contact structure. Since the first contact structure has a smaller resistance, a good electrical contact effect is ensured between the second shielding structure and the first contact structure, thus ensuring good electrical contact between the second and first shielding structures and consequently, good inductive shielding effect. Simultaneously, the larger resistance of the main shielding layer results in a larger resistance in the first shielding structure, thereby reducing the eddy current generated by the inductor during operation, lowering the inductor's energy loss, and improving the inductor's quality factor Q. In addition, it reduces the parasitic capacitance between the first and second shielding structures and the inductor coil, thereby improving the inductor's quality factor Q at high frequencies.

[0033] In the inductor formation method provided by the technical solution of the present invention, since the material of the main shielding layer is the same as or different from the material of the first contact structure, by selecting appropriate materials for the main shielding layer and the first contact structure, the energy loss of the inductor can be reduced and the quality factor Q of the inductor can be improved while ensuring good electrical contact performance between the second shielding structure and the first shielding structure.

[0034] Furthermore, since the resistance of the main shielding layer in the first shielding structure is greater than the resistance of the first contact structure, and the second shielding structure is connected to the main shielding layer through the first contact structure, good electrical contact between the second shielding structure and the first shielding structure is ensured. Simultaneously, due to the higher resistance of the main shielding layer, the eddy current generated by the inductor during operation is reduced, lowering the inductor's energy loss. In addition, the parasitic capacitance between the first and second shielding structures and the inductor coil is also reduced, thereby improving the inductor's quality factor Q at high frequencies.

[0035] Furthermore, the method for forming the first shielding structure is compatible with the process for forming the peripheral components of the inductor, allowing the first shielding structure to be formed simultaneously with the formation of the peripheral components of the inductor, thereby simplifying the process steps. Attached Figure Description

[0036] Figures 1 to 6 This is a schematic diagram of the structure of an inductor according to an embodiment of the present invention. Detailed Implementation

[0037] As described in the background section, in the prior art, the shielding of inductors is typically made of metal. Because metal has low resistance, it generates large eddy currents during inductor operation, increasing energy loss. Furthermore, the large parasitic capacitance between the metal shielding and the coil reduces the inductor's quality factor Q, thus affecting its efficiency. However, if the metal material used in some of the shielding structures is completely replaced with polycrystalline silicon, which has higher resistance, the electrical contact between the structures within the shielding will be poor, thus affecting the shielding effect.

[0038] To solve the above-mentioned technical problems, the present invention provides an inductor in which the material of the main shielding layer in the first shielding structure is the same as or different from the material of the first contact structure. Therefore, by selecting appropriate materials for the main shielding layer and the first contact structure, the energy loss of the inductor can be reduced and the quality factor Q of the inductor can be improved while ensuring good electrical contact performance between the second shielding structure and the first shielding structure.

[0039] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0040] Figures 1 to 6 This is a schematic diagram of the structure of an inductor according to an embodiment of the present invention.

[0041] Please refer to Figures 1 to 4 , Figure 1 for Figure 2 Top view along direction P, Figure 2 for Figure 1 A schematic diagram of the cross-sectional structure along the AA' direction. Figure 3 for Figure 1 Top view of the first shielding structure 101. Figure 4 for Figure 1 Top view of the second shielding structure 102.

[0042] The inductor includes: a substrate 100, the substrate 100 including an inductor device region (not shown); a first shielding structure 101 located on the inductor device region, the first shielding structure 101 including a main shielding layer 103, a first contact structure 104 connected to the main shielding layer 103, and a first protective ring 107 surrounding the main shielding layer 103, the material of the main shielding layer 103 being the same as or different from the material of the first contact structure 104; and a second shielding structure 102 located on the first shielding structure 101, the second shielding structure 102 being connected to the main shielding layer 103 through the first contact structure 104, the second shielding structure 102 further including a second protective ring 112 connected to the first protective ring 107.

[0043] In this embodiment, the resistance of the main shielding layer 103 is greater than the resistance of the first contact structure 104.

[0044] The substrate 100 is made of materials including silicon, silicon-germanium, silicon carbide, silicon-on-insulator (SOI), germanium-on-insulator (GOI), etc. In this embodiment, the substrate 100 also includes a bottom device layer (not shown).

[0045] The inductor device area comprises a first shielding structure 101, a second shielding structure 102, and an inductor coil 120 (e.g., Figure 5 (As shown) provides a platform.

[0046] The surface pattern of the inductor device area is a centrally symmetric pattern; the centrally symmetric pattern includes annular, circular, rectangular, or octagonal shapes. Specifically, in this embodiment, the surface pattern of the inductor device area is an octagonal shape.

[0047] The first shielding structure 101 and the second shielding structure 102 are used to shield the electric and magnetic fields generated by the inductor from interfering with other devices in the substrate 100.

[0048] In this embodiment, the second shielding structure 102 is stacked on top of the first shielding structure 101, and the second shielding structure 102 is placed parallel to the first shielding structure 101. The projection patterns of the first shielding structure 101 and the second shielding structure 102 on the substrate 100 are located within the surface area of ​​the inductor device region. Please continue to refer to... Figures 1 to 4 The first shielding structure 101 includes a main shielding layer 103 and a first contact structure 104, wherein the main shielding layer 103 and the first contact structure 104 are located in the same layer. The main shielding layer 103 and the first contact structure 104 are made of different materials, and the resistance of the main shielding layer 103 is greater than that of the first contact structure 104. This allows for increased overall resistance of the first shielding structure 101 while ensuring good electrical contact between the first shielding structure 101 and the second shielding structure 102.

[0049] In this embodiment, the material of the main shielding layer 103 includes polysilicon. Since polysilicon has a high resistance, the overall resistance of the first shielding structure 101 is also high, thereby reducing the eddy current generated by the inductor during operation, reducing the inductor's energy loss, and improving the inductor's quality factor Q. Furthermore, it reduces the resistance of the first shielding structure 101, the second shielding structure 102, and the inductor coil 120 (as shown in the image). Figure 5 The parasitic capacitance between the two inductors (as shown in the figure) is reduced, thereby improving the quality factor Q of the inductor at high frequencies.

[0050] The first contact structure 104 is used to connect the second shielding structure 102 and the main shielding layer 103.

[0051] Since the resistance of the first contact structure 104 is lower than that of the main shielding layer 103, while increasing the resistance of the main shielding layer 103 to improve the quality factor Q of the inductor, the first contact structure 104 has a smaller resistance, ensuring a better electrical contact between the second shielding structure 102 and the first contact structure 104. This, in turn, ensures a good electrical contact between the second shielding structure 102 and the first shielding structure 101, thereby guaranteeing a good shielding effect between the second shielding structure 102 and the first shielding structure 101.

[0052] Therefore, by combining the first contact structure 104 made of materials with different resistances with the main shielding layer 103 to form the first shielding structure 101, the first shielding structure 101 has a large overall resistance while ensuring good electrical contact with the second shielding structure 102. This ensures that the first shielding structure 101 and the second shielding structure 102 in the inductor can play a good inductive shielding role and reduce the influence of the inductor on other surrounding devices.

[0053] In this embodiment, the material of the first contact structure 104 includes metal. Since the resistance of metal is much lower than that of polysilicon, the inductor can have a higher quality factor Q while having less impact on other devices within the substrate 100.

[0054] Please continue to refer to this. Figures 1 to 4 The second shielding structure 102 is connected to the main shielding layer 103 through the first contact structure 104.

[0055] In this embodiment, the projected pattern of the first contact structure 104 on the surface of the substrate 100 is a first pattern. The axis of symmetry of the first pattern coincides with the axis of symmetry of the surface pattern of the inductor device region. Specifically, the first pattern includes a plurality of discrete rectangles.

[0056] The second shielding structure 102 includes: a plurality of ring structures 111, and a connecting line structure 110 that connects the ring structures 111.

[0057] The projection pattern of the connecting line structure 110 onto the surface of the substrate 100 is a second pattern. In this embodiment, the second pattern is a rectangle. The axis of symmetry of the second pattern coincides with the axis of symmetry of the first pattern.

[0058] The first contact structure 104 is connected to the connecting line structure 110 through the first conductive plug 141, thereby realizing the electrical connection between the first shielding structure 101 and the second shielding structure 102.

[0059] In this embodiment, the material of the second shielding structure 102 includes metal, that is, the materials of the annular structure 111 and the connecting line structure 110 include metal.

[0060] Since both the first contact structure 104 and the connecting line structure 110 are made of metal, the contact resistance between the first contact structure 104 and the connecting line structure 110 is small, resulting in good electrical contact between the first shielding structure 101 and the second shielding structure 102, thereby optimizing the inductor's inductive shielding effect on other surrounding devices.

[0061] The larger the overlapping area of ​​the projection patterns of the first contact structure 104 and the connecting line structure 110 on the surface of the substrate 100, i.e., the larger the electrical contact area between the first conductive plug 141 located between the first contact structure 104 and the connecting line structure 110 and both, the better the electrical contact effect between the first shielding structure 101 and the second shielding structure 102. In this embodiment, the ratio of the size of the first pattern along the axis of symmetry to the size of the second pattern along the axis of symmetry is greater than 1:4 to ensure good electrical contact between the first shielding structure 101 and the second shielding structure 102, thereby providing better shielding against electric and magnetic fields.

[0062] However, the larger the area of ​​the first pattern, the smaller the space for arranging the main shielding layer 103 with higher resistance. This limits the overall resistance improvement of the first shielding structure 101, thus having a limited effect on improving the inductor's quality factor Q. Therefore, while ensuring good contact between the first contact structure 104 and the connecting wire structure 110, the proportion of the main shielding layer 103 should be increased as much as possible to better improve the inductor's quality factor Q.

[0063] Specifically, in this embodiment, the ratio of the size of the first graphic along the axis of symmetry to the size of the second graphic along the axis of symmetry is in the range of 1 / 3 to 2 / 3.

[0064] Please continue to refer to this. Figure 3 In this embodiment, the first shielding structure 101 includes a main shielding layer 103 having a plurality of sub-shielding structures (not shown) and an interconnecting structure (not shown) connecting the sub-shielding structures to each other. Each sub-shielding structure includes a first sub-structure and a second sub-structure that are perpendicular to each other, and the first sub-structure and the second sub-structure are in contact with each other.

[0065] When the inductor is working, since the first and second substructures of each sub-shielding structure are perpendicular to each other, the directions of the eddy currents generated by each sub-shielding structure are different. As a result, the overall eddy current generated by the main shielding layer 103 is reduced, thereby reducing the energy loss of the inductor and improving the quality factor Q of the inductor.

[0066] In this embodiment, the first shielding structure 101 includes a first protective ring 107 surrounding the main shielding layer 103 and the first contact structure 104. The first protective ring 107 is electrically isolated from the main shielding layer 103 and the first contact structure 104. The first protective ring 107 has an opening, so that the first protective ring 107 is composed of two semi-rings.

[0067] Please continue to refer to this. Figure 4 The second shielding structure 102 includes: a plurality of ring structures 111 and a connecting line structure 110 that connects the ring structures 111.

[0068] In this embodiment, the number of annular structures 111 is greater than 1, and the annular structures 111 are arranged in concentric rings. Each annular structure 111 has an opening, so that each annular structure 111 is composed of two semi-rings.

[0069] Furthermore, the second protective ring 112 included in the second shielding structure 102 is arranged concentrically with each annular structure 111, and the second protective ring 112 surrounds the outside of each annular structure 111. The second protective ring 112 is provided with an opening, so that the second protective ring 112 is composed of two semi-rings.

[0070] In this embodiment, the annular structure 111, the second protective ring 112, and the connecting line structure 110 are located on the same layer. The connecting line structure 110 connects the half-rings included in each annular structure 111 and the second protective ring 112 to each other.

[0071] In other embodiments, the number of the ring structures is equal to 1.

[0072] Please continue to refer to this. Figures 2 to 4 In this embodiment, the first protection ring 107 is connected to the second protection ring 112.

[0073] Specifically, the first protective ring 107 includes a first protective layer 105 and a second contact structure 106, wherein the resistance of the first protective layer 105 is greater than the resistance of the second contact structure 106. The second contact structure 106 is connected to the second protective ring 112 through a second conductive plug 142.

[0074] Since the resistance of the first protective layer 105 is greater than that of the second contact structure 106, the first protective ring 107 has a larger overall resistance while ensuring good electrical contact between the second contact structure 106 and the second protective ring 112. This results in a higher quality factor Q for the inductor and allows the first shielding structure 101 and the second shielding structure 102 in the inductor to perform better inductive shielding.

[0075] Specifically, the material of the first protective layer 105 includes polycrystalline silicon; the material of the second contact structure 106 includes metal; and the structure of the second protective ring 112 includes metal.

[0076] Please continue to refer to this. Figure 2 In this embodiment, a first dielectric layer (not shown) is further provided between the main shielding layer 103 and the substrate 100, and a second dielectric layer 151 is further provided between the first contact structure 104 and the substrate 100. The second dielectric layer 151 is also located between the second contact structure 106 and the substrate 100.

[0077] In this embodiment, the inductor further includes: a third dielectric layer 152 located on the first dielectric layer and the second dielectric layer 151, with the first shielding structure 101 located within the third dielectric layer 152; a fourth dielectric layer 153 located on the third dielectric layer 152 and the first shielding structure 101, with the first conductive plug 141 and the second conductive plug 142 located within the fourth dielectric layer 153; and a fifth dielectric layer 154 located on the fourth dielectric layer 153, with the second shielding structure 102 located within the fifth dielectric layer 154.

[0078] It should be noted that, for ease of understanding, the following... Figure 1 The first dielectric layer, the second dielectric layer 151, the third dielectric layer 152, the fourth dielectric layer 153, and the fifth dielectric layer 154 are omitted.

[0079] Please refer to Figure 5 The inductor further includes an inductor coil 120 located on the second shielding structure 102.

[0080] The inductor coil 120 includes: a plurality of coil layers (not shown) stacked together, each coil layer including a plurality of sub-coil structures (not shown) located on the same layer; an electrical connection layer (not shown) located between each two adjacent coil layers, the coil layers being connected in parallel through the electrical connection layer, and the sub-coil structures located on the same layer being electrically connected through a connecting bridge (not shown).

[0081] The inductor coil 120 is used to generate an induced magnetic field.

[0082] Please refer to Figure 6The substrate 100 also has a bottom substrate shielding structure 130 in the inductor device region.

[0083] The projection pattern of the bottom substrate shielding structure 130 on the surface of the substrate 100 coincides with the projection pattern of the first shielding structure 101 on the surface of the substrate 100.

[0084] The bottom substrate shielding structure 130 includes several mutually perpendicular sub-substrate structures (not shown). When the inductor is operating, since the sub-substrate structures are mutually perpendicular, the directions of the eddy currents generated by each sub-substrate structure are different. This reduces the overall eddy current generated by the bottom substrate shielding structure 130, thereby reducing the energy loss of the inductor and improving the quality factor Q of the inductor.

[0085] In this embodiment, the inductor includes an inductor coil 120, a first shielding structure 101, a second shielding structure 102, and a bottom substrate shielding structure 130, arranged as follows: the first shielding structure 101 is stacked on top of the bottom substrate shielding structure 130; the second shielding structure 102 is stacked on top of the first shielding structure 101; and the inductor coil 120 is stacked on top of the second shielding structure 102.

[0086] Accordingly, embodiments of the present invention also provide a method for forming the above-mentioned inductor.

[0087] Please continue to refer to this. Figures 1 to 6 The method of forming the inductor includes: providing a substrate 100, the substrate 100 including an inductor device region; forming a first shielding structure 101 located on the inductor device region, the first shielding structure 101 including a main shielding layer 103, a first contact structure 104 connected to the main shielding layer 103, and a first protective ring 107 surrounding the main shielding layer 103, the material of the main shielding layer 103 being the same as or different from the material of the first contact structure 104; forming a second shielding structure 102 located on the first shielding structure 101, the second shielding structure 102 being connected to the main shielding layer 103 through the first contact structure 104, the second shielding structure 102 further including a second protective ring 112 connected to the first protective ring 107; and forming an inductor coil 120 located on the second shielding structure 102.

[0088] In this embodiment, the resistance of the main shielding layer 103 is greater than the resistance of the first contact structure 104.

[0089] In this embodiment, the first protective ring 107 includes a first protective layer 105 and a second contact structure 106, wherein the resistance of the first protective layer 105 is greater than the resistance of the second contact structure 106.

[0090] In this embodiment, the method for forming the first shielding structure 101 includes: forming an initial gate structure (not shown) located on the inductor device region, the initial gate structure including a main shielding region, a first contact region, and a first protection ring region, the first protection ring region including a first protection layer region and a second contact region; removing the initial gate structure in the first contact region and the second contact region to form a first gate opening (not shown), a second gate opening (not shown), a main shielding layer 103 located in the main shielding region, and a first protection layer 105 located in the first protection layer region; and forming a first contact structure 104 and a second contact structure 106 in the first gate opening and the second gate opening.

[0091] In the inductor formation method of this embodiment, the formation method of the first shielding structure 101 is compatible with the formation process of the peripheral devices of the inductor. The first shielding structure 101 can be formed at the same time as the gate structure of the peripheral devices of the inductor, thereby simplifying the process steps.

[0092] Furthermore, the second shielding structure 102 is also formed simultaneously with the peripheral components of the inductor, further simplifying the process steps.

[0093] In this embodiment, the material of the main shielding layer 103 includes polycrystalline silicon.

[0094] In this embodiment, the material of the first contact structure 104 includes metal.

[0095] In this embodiment, the inductor device region of the substrate 100 also has a bottom substrate shielding structure 130.

[0096] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. An inductor, characterized in that, include: Substrate, the substrate including an inductor device region; A first shielding structure located on the inductor device area, the first shielding structure including a main shielding layer, a first contact structure connected to the main shielding layer, and a first protective ring surrounding the main shielding layer, wherein the material of the main shielding layer is different from the material of the first contact structure, the main shielding layer and the first contact structure are located on the same layer, and the resistance of the main shielding layer is greater than the resistance of the first contact structure. A second shielding structure located on the first shielding structure, the second shielding structure being connected to the main shielding layer through the first contact structure, and the second shielding structure further including a second protective ring connected to the first protective ring; The inductor coil located on the second shielding structure.

2. The inductor as described in claim 1, characterized in that, The main shielding layer and the substrate are further provided with a first dielectric layer, and the first contact structure and the substrate are further provided with a second dielectric layer.

3. The inductor as described in claim 1, characterized in that, The material of the main shielding layer includes polycrystalline silicon.

4. The inductor as described in claim 1, characterized in that, The material of the first contact structure includes metal.

5. The inductor as described in claim 1, characterized in that, The surface pattern of the inductor region is a centrally symmetrical pattern; the projection patterns of the first shielding structure and the second shielding structure on the substrate are located within the surface area of ​​the inductor region.

6. The inductor as described in claim 5, characterized in that, The centrally symmetric shape includes annular, circular, rectangular, or octagonal shapes.

7. The inductor as claimed in claim 1, characterized in that, The projection pattern of the first contact structure onto the substrate surface is a first pattern, and the axis of symmetry of the first pattern coincides with the axis of symmetry of the surface pattern of the inductor device region.

8. The inductor as claimed in claim 1, characterized in that, The material of the second shielding structure includes metal.

9. The inductor as claimed in claim 1, characterized in that, The second shielding structure also includes: several ring structures and connecting wire structures that connect the ring structures.

10. The inductor as claimed in claim 9, characterized in that, The projection pattern of the first contact structure on the substrate surface is a first pattern, and the projection pattern of the connecting line structure on the substrate surface is a second pattern. The axis of symmetry of the first pattern coincides with the axis of symmetry of the second pattern.

11. The inductor as claimed in claim 10, characterized in that, The ratio of the dimension of the first figure along the axis of symmetry to the dimension of the second figure along the axis of symmetry is greater than 1:

4.

12. The inductor as claimed in claim 9, characterized in that, The first contact structure is connected to the connecting line structure through a first conductive plug.

13. The inductor as claimed in claim 9, characterized in that, When the number of the ring structures is greater than 1, the ring structures are arranged in concentric rings.

14. The inductor as claimed in claim 1, characterized in that, The first protective ring includes a first protective layer and a second contact structure, wherein the resistance of the first protective layer is greater than the resistance of the second contact structure.

15. The inductor as claimed in claim 14, characterized in that, The second contact structure is connected to the second protective ring through a second conductive plug.

16. The inductor as claimed in claim 1, characterized in that, The inductor device region has a bottom substrate shielding structure.

17. A method for forming an inductor, characterized in that, include: A substrate is provided, the substrate including an inductor device region; A first shielding structure is formed on the inductor device region. The first shielding structure includes a main shielding layer, a first contact structure connected to the main shielding layer, and a first protective ring surrounding the main shielding layer. The material of the main shielding layer is different from the material of the first contact structure. The main shielding layer and the first contact structure are located on the same layer, and the resistance of the main shielding layer is greater than the resistance of the first contact structure. A second shielding structure is formed on the first shielding structure. The second shielding structure is connected to the main shielding layer through the first contact structure. The second shielding structure also includes a second protective ring that is connected to the first protective ring. An inductor coil is formed on the second shielding structure.

18. The method for forming an inductor as described in claim 17, characterized in that, The material of the main shielding layer includes polycrystalline silicon.

19. The method for forming an inductor as described in claim 17, characterized in that, The material of the first contact structure includes metal.

20. The method for forming an inductor as described in claim 17, characterized in that, The first protective ring includes a first protective layer and a second contact structure, wherein the resistance of the first protective layer is greater than the resistance of the second contact structure.

21. The method for forming an inductor as described in claim 20, characterized in that, The method for forming the first shielding structure includes: forming an initial gate structure located on the inductor device region, the initial gate structure including a main shielding region, a first contact region, and a first guard ring region, the first guard ring region including a first guard layer region and a second contact region; removing the initial gate structure in the first contact region and the second contact region to form a first gate opening, a second gate opening, a main shielding layer located in the main shielding region, and a first guard layer located in the first guard layer region; and forming a first contact structure and a second contact structure in the first gate opening and the second gate opening.

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