Capacitor device and method of forming the same

CN117015300BActive Publication Date: 2026-07-21SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Filing Date
2022-04-27
Publication Date
2026-07-21

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Abstract

A capacitor device and a method of forming the same, wherein the structure comprises: a conductive plug, the conductive plug comprises a first conductive plug, a second conductive plug, a third conductive plug and a fourth conductive plug, the first conductive plug electrically connects the first electrode layer and the adjacent first conductive region, the second conductive plug electrically connects the second electrode layer and the adjacent second conductive region, the third conductive plug electrically connects the first conductive region in the first and second metal layers, and the fourth conductive plug electrically connects the second conductive region in the first and second metal layers, the first and second conductive regions are connected to different electrode terminals, the capacitance between the first and second conductive plugs is increased, and the capacitance between the first conductive layer and the second conductive plug and between the second conductive layer and the first conductive plug is increased, thereby improving the capacitance density of the device.
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