Micro LED Display Panel and Manufacturing Method

Abstract

The application provides a Micro LED display panel and a manufacturing method. The Micro LED display panel includes an array of a plurality of Micro LEDs, wherein each of the Micro LEDs includes at least two light emitting platforms stacked in a vertical direction from bottom to top and a conductive layer located on the upper and lower sides of each of the light emitting platforms, the conductive layer includes a top conductive layer arranged above each of the light emitting platforms and a bottom conductive layer arranged below each of the light emitting platforms; a driving backboard arranged at the bottom of the array of the Micro LEDs for controlling the plurality of Micro LEDs; an electrical connection structure including at least one top electrical connection structure and at least one bottom electrical connection structure, the end of the conductive layer extends into an etching path to form an etching blocking segment, so that the insulating medium on both sides of the etching blocking segment can be etched together to form an etching hole. Filling the etching hole with a conductor material so that the electrical connection structure on both sides of the etching blocking segment is integrally formed, which can improve the production efficiency.

Description

Technical Field

[0001] This application relates to the field of Micro LED, and more particularly to a Micro LED display panel and its manufacturing method. Background Technology

[0002] Inorganic micropixel light-emitting diodes, also known as micro LEDs or μ-LEDs, have become increasingly important since their application in various fields, including self-emissive microdisplays, visible light communication, and optogenetics. Compared to traditional LEDs, Micro LEDs offer advantages such as better strain relaxation, higher light extraction efficiency, more uniform current diffusion, and higher output performance. Micro LEDs also boast improved thermal effects, faster response times, a wider operating temperature range, higher resolution, a broader color gamut, higher contrast, lower power consumption, and higher current density.

[0003] Typically, a multi-color Micro LED display panel can include a MicroLED array composed of multiple multi-color Micro LEDs. Each multi-color Micro LED includes multiple light-emitting mesas, and each light-emitting mesas can be electrically connected to its respective electrode, thereby allowing control of each light-emitting mesas. For a multi-color Micro LED display panel, the electrode connections of each light-emitting mesas of each multi-color Micro LED occupy a significant amount of space within the panel. This may limit the arrangement of more multi-color Micro LEDs on the panel, hindering the improvement of pixel density. Summary of the Invention

[0004] To address the aforementioned technical problems, this application provides a Micro LED display panel and manufacturing method. At least one groove with an opening facing the light-emitting platform is provided on the side of the electrical connection structure near the light-emitting platform. The end of at least one conductive layer extends into the groove and is electrically connected to the corresponding electrical connection structure. The groove is also filled with an insulating medium, which reduces the material usage of the electrical connection structure and facilitates the integral molding of the electrical connection structure.

[0005] Furthermore, the end of the conductive layer extends into the etching path to form an etching barrier section, allowing the insulating medium on both sides of the etching barrier section to be etched together, thereby forming an etching hole. The etching hole is filled with conductive material so that the electrical connection structure on both sides of the etching barrier section is integrally formed, which can improve production efficiency.

[0006] To achieve at least one of the above objectives, this application provides a Micro LED display panel, comprising:

[0007] The Micro LED array includes a plurality of Micro LEDs, wherein each Micro LED includes at least two light-emitting platforms, the at least two light-emitting platforms being stacked vertically from bottom to top; and conductive layers located on the upper and lower sides of each light-emitting platform, the conductive layers including a top conductive layer disposed above each light-emitting platform and a bottom conductive layer disposed below each light-emitting platform;

[0008] A driving backplate, disposed at the bottom of the Micro LED array, is used to control the plurality of Micro LEDs; and

[0009] An electrical connection structure is provided, comprising at least one top electrical connection structure and at least one bottom electrical connection structure, wherein the at least one top electrical connection structure is electrically connected to the top conductive layer, and each bottom electrical connection structure is correspondingly electrically connected to one bottom conductive layer; the electrical connection structure is disposed around the light-emitting platform.

[0010] The electrical connection structure has at least one groove with an opening facing the light-emitting platform on the side near the light-emitting platform, and at least one end of at least one conductive layer corresponding to at least one light-emitting platform includes an etch-blocking segment, the etch-blocking segment extending into the groove and electrically connected to the electrical connection structure; the groove between adjacent light-emitting platforms is filled with an insulating medium.

[0011] To achieve the above objectives, this application further provides a method for manufacturing a Micro LED display panel, comprising:

[0012] Multiple first bottom conductive layers are formed at multiple predetermined locations on the substrate;

[0013] A first light-emitting platform is formed on each of the first bottom conductive layers;

[0014] A first top conductive layer is formed above each of the first light-emitting platforms;

[0015] An insulating medium is filled around the first light-emitting platform to form a first insulating medium layer, and the first insulating medium layer covers the area above the first top conductive layer.

[0016] A first etch hole is formed by etching along a first etch path in a predetermined area between adjacent first light-emitting platforms, wherein at least one end of the first top conductive layer is located at the first etch path and forms an etch barrier segment, so that the insulating medium located below the etch barrier segment is retained during etching; and

[0017] The first etched hole is filled with conductive material to form a top electrical connection structure that is connected to the first top conductive layer.

[0018] Technical effects:

[0019] 1) At least one groove with an opening facing the light-emitting platform is provided on the side of the electrical connection structure near the light-emitting platform. The end of at least one conductive layer extends into the groove and is electrically connected to the corresponding electrical connection structure. The groove is also filled with an insulating medium, which can reduce the amount of material used in the electrical connection structure and facilitate the integral molding of the electrical connection structure.

[0020] 2) The end of the conductive layer extends into the etching path to form an etching barrier section, which allows the insulating medium on both sides of the etching barrier section to be etched together to form an etching hole. The conductive material is filled into the etching hole so that the electrical connection structure on both sides of the etching barrier section is integrally formed, which can improve production efficiency.

[0021] 3) The first electrical connection segment of the top conductive layer extends into the groove to form an etching blocking segment, and the second electrical connection segment is electrically connected to the light-emitting platform. The first electrical connection segment and the second electrical connection segment have a preset height difference. The height of the first electrical connection segment is higher or lower than that of the second electrical connection segment, and the length of the groove can be adjusted as needed. Attached Figure Description

[0022] The above and other objects, features and advantages of this disclosure will become more apparent from the more detailed description of exemplary embodiments thereof taken in conjunction with the accompanying drawings, wherein like reference numerals generally denote like parts.

[0023] Figure 1 This is a top view of a Micro LED array according to an embodiment of this application;

[0024] Figure 2 This application Figure 1 A top view of a single Micro LED in the Micro LED array of the illustrated embodiment;

[0025] Figure 3 yes Figure 2 The diagram shows a cross-sectional structure of the Micro LED along line aa.

[0026] Figure 4 yes Figure 2 The diagram shows a cross-sectional structure of the Micro LED along line bb.

[0027] Figure 5 yes Figure 2 The diagram shows a cross-sectional structure of the Micro LED along the cc line.

[0028] Figure 6a This is a top view of another embodiment of the Micro LED in this application;

[0029] Figure 6b yes Figure 6a A schematic diagram of the cross-sectional structure of the Micro LED shown along line a1-a1;

[0030] Figure 7a yes Figure 3 An enlarged view of an embodiment of the Micro LED at point F shown;

[0031] Figure 7b yes Figure 3 An enlarged view of another embodiment of the Micro LED shown at point F;

[0032] Figure 8 This is a top view of the Micro LED structure according to another embodiment of this application;

[0033] Figure 9 yes Figure 2 A schematic diagram of a modified embodiment of the cross-sectional structure of the Micro LED along line bb shown.

[0034] Figure 10 yes Figure 2 A schematic diagram of a modified embodiment of the Micro LED cross-sectional structure along the cc line shown in the figure.

[0035] Figure 11 yes Figure 2 A schematic diagram of another modified embodiment of the Micro LED cross-sectional structure along the cc line shown in the figure.

[0036] Figure 12 This is a cross-sectional structural diagram of two adjacent Micro LEDs according to an embodiment of this application;

[0037] Figure 13a This is a top view of a single Micro LED according to another embodiment of this application;

[0038] Figure 13b It is multiple Figure 13a The diagram shows a top view of the array arrangement of Micro LEDs.

[0039] Figure 13c yes Figure 13a The diagram shows a cross-sectional structure of the Micro LED along line ee.

[0040] Figure 13d yes Figure 13aThe diagram shows a cross-sectional structure of the Micro LED along line ff.

[0041] Figure 13e yes Figure 13a The diagram shows a cross-sectional structure of the Micro LED along line gg.

[0042] Figure 13f yes Figure 13a The diagram shows a cross-sectional structure of the Micro LED along line hh.

[0043] Figure 14 This is a flowchart of the manufacturing method of a Micro LED panel according to an embodiment of this application;

[0044] Figure 15 This is a flowchart of the sub-steps of a method for manufacturing a Micro LED panel according to an embodiment of this application;

[0045] Figure 16 This is a flowchart of the sub-steps of a method for manufacturing a Micro LED panel according to an embodiment of this application;

[0046] Figure 17 This is a flowchart of the sub-steps of a method for manufacturing a Micro LED panel according to an embodiment of this application;

[0047] Figure 18 yes Figure 2 The diagram shows a structural schematic of the manufacturing process of a Micro LED along a cross-section of line aa.

[0048] Figure 19 yes Figure 2 The diagram shows a structural schematic of the manufacturing process of Micro LED along the bb line cross-section.

[0049] Figure 20 yes Figure 2 The diagram shows a structural schematic of the manufacturing process of Micro LED along the cc line cross-section.

[0050] Figure 21 This is a flowchart of the manufacturing method of a Micro LED panel according to another embodiment of this application. Detailed Implementation

[0051] Preferred embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. While preferred embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

[0052] Some embodiments of this application provide a Micro LED display panel.

[0053] refer to Figure 1 The Micro LED display panel 100 provided in this application includes a Micro LED array 110 and a driving backplate 120. The Micro LED array 110 is disposed on one side of the driving backplate 120 and forms an image display area, while the driving backplate 120 is disposed on the back side of the Micro LED array 110. Areas of the driving backplate 120 where the Micro LED array 110 is not disposed are non-functional areas. The Micro LED array 110 includes a plurality of Micro LEDs 200 (also referred to as pixels). The driving backplate 120 is configured to control the plurality of Micro LEDs 200. In some embodiments, the driving backplate 120 is a TFT (Thin Film Transistor) board or an IC (Integrated Circuit) board.

[0054] Figure 2 A top view of an exemplary MicroLED 200 in a MicroLED array 110 according to an embodiment of this application is shown. Figure 3 yes Figure 2 The diagram shows a cross-sectional structure of the Micro LED along line aa. Figure 4 yes Figure 2 The diagram shows a cross-sectional structure of the Micro LED along line bb. Figure 5 yes Figure 2 The diagram shows a cross-sectional view of the Micro LED along the cc line. (Reference) Figures 3 to 5 The Micro LED 200 includes at least two light-emitting mesa 210 stacked vertically from top to bottom, and conductive layers 220 located on the upper and lower sides of each light-emitting mesa 210. The conductive layers 220 include a top conductive layer 221 disposed above each light-emitting mesa 210 and a bottom conductive layer 222 disposed below each light-emitting mesa 210. The top conductive layer 221 is electrically connected to the top surface of the light-emitting mesa 210, and the bottom conductive layer 222 is electrically connected to the bottom surface of the light-emitting mesa 210. The conductive layers 220 are used to supply power to the light-emitting mesa 210 to illuminate the corresponding light-emitting mesa 210.

[0055] Further, the at least two light-emitting platforms 210 include a first light-emitting platform 211, a second light-emitting platform 212, and a third light-emitting platform 213, which are stacked vertically from bottom to top. In some embodiments, the number of light-emitting platforms 210 included in the at least two light-emitting platforms 210 can be two or more. Preferably, the first light-emitting platform 211 emits red light, the second light-emitting platform 212 emits green light, and the third light-emitting platform 213 emits blue light. In some embodiments, the light-emitting platforms 210 of different layers of a Micro LED 200 emit light of the same color; for example, the first light-emitting platform 211, the second light-emitting platform 212, and the third light-emitting platform 213 all emit blue light, or the first light-emitting platform 211, the second light-emitting platform 212, and the third light-emitting platform 213 all emit green or red light. In at least two vertically stacked light-emitting platforms 210, adjacent light-emitting platforms 210 are spaced apart. In some embodiments, the spacing between two adjacent light-emitting platforms 210 in the vertical direction is equal. In some embodiments, the spacing between two adjacent light-emitting platforms 210 in the vertical direction can be set to unequal spacing as needed. In some embodiments, the top and bottom surfaces of the light-emitting platforms 210 are both circular, and the top diameter of the light-emitting platform 210 is smaller than the bottom diameter. For example, the top diameter of the first light-emitting platform 211 is smaller than the bottom diameter of the first light-emitting platform 211, the top diameter of the second light-emitting platform 212 is smaller than the bottom diameter of the second light-emitting platform 212, and the top diameter of the third light-emitting platform 213 is smaller than the bottom diameter of the third light-emitting platform 213. In some embodiments, the top and bottom surfaces of the light-emitting platforms 210 can also be non-circular, such as square or elliptical. In some embodiments, the area of ​​the top surface of the light-emitting platform 210 is smaller than the area of ​​the bottom surface.

[0056] In some embodiments, at least two light-emitting platforms 210 are coaxially arranged. The projections of the respective light-emitting platforms 210 in the vertical direction overlap. In some embodiments, the light-emitting platforms 210 may have different sizes, and the projections of the respective light-emitting platforms 210 in the vertical direction may partially overlap.

[0057] refer to Figures 2 to 5The Micro LED 200 also includes an electrical connection structure 230, which is electrically connected to the conductive layer 220 of the Micro LED 200 for illuminating the light-emitting mesa 210. The electrical connection structure 230 includes at least one top electrical connection structure 231 and at least one bottom electrical connection structure 232. The at least one top electrical connection structure 231 is electrically connected to the top conductive layer 221 of each light-emitting mesa 210, and each bottom electrical connection structure 232 is correspondingly electrically connected to the bottom conductive layer 222 of one light-emitting mesa 210. The bottom of the top electrical connection structure 231 is combined with the driving backplate 120, but is not directly electrically connected to the driving backplate 120. The top electrical connection structure 231 can electrically connect the top conductive layer 221 to the negative terminal of an external power supply. The bottom of each bottom electrical connection structure 232 is combined with and electrically connected to the driving backplate 120. Each bottom electrical connection structure 232 can electrically connect the bottom conductive layer 222 to the positive terminal of an external power supply. The electrical connection structure 230 is disposed around the light-emitting platform 210. It can not only electrically connect the light-emitting platform 210 to the driving backplate 120, but also reflect the light emitted by the light-emitting platform 210, prevent crosstalk between adjacent Micro LEDs 200, and improve luminous efficiency.

[0058] refer to Figure 2 It shows a top view of a single Micro LED 200. The bottom electrical connection structure 232 includes a first bottom electrical connection structure 232a and a second bottom electrical connection structure 232b, with the first bottom electrical connection structure 232a located at... Figure 2 In the direction of line aa, the second bottom electrical connection structure 232b is located Figure 2 The direction of the bb line in the middle. The top electrical connection structure 231 is located in Figure 2 Direction of the CC and DD lines. (Reference) Figures 3 to 5 The bottom conductive layer 222 includes a first bottom conductive layer 222a, a second bottom conductive layer 222b, and a third bottom conductive layer 222c. The first bottom conductive layer 222a is located at the bottom of the first light-emitting platform 211, the second bottom conductive layer 222b is located at the bottom of the second light-emitting platform 212, and the third bottom conductive layer 222c is located at the bottom of the third light-emitting platform 213. The top conductive layer 221 includes a first top conductive layer 221a, a second top conductive layer 221b, and a third top conductive layer 221c. The first top conductive layer 221a is located at the top of the first light-emitting platform 211, the second top conductive layer 221b is located at the top of the second light-emitting platform 212, and the third top conductive layer 221c is located at the top of the third light-emitting platform 213. (Reference) Figure 3 One end of the second bottom conductive layer 222b extends to and is electrically connected to the first bottom electrical connection structure 232a. (See reference) Figure 4One end of the third bottom conductive layer 222c extends to and is electrically connected to the second bottom electrical connection structure 232b. (See reference) Figure 5 The ends of the first top conductive layer 221a, the second top conductive layer 221b and the third top conductive layer 221c all extend to the top electrical connection structure 231 and are electrically connected to the top electrical connection structure 231.

[0059] A top electrical connection structure 231 can be electrically connected to all the top conductive layers 221 (first top conductive layer 221a, second top conductive layer 221b, and third top conductive layer 221c), and a bottom electrical connection structure 232 is correspondingly electrically connected to a bottom conductive layer 222 (first bottom conductive layer 222a, second bottom conductive layer 222b, or third bottom conductive layer 222c).

[0060] refer to Figure 2 There are four top electrical connection structures 231, two of which are arranged along the direction of the cc line and the other two are arranged along the direction of the dd line. All four top electrical connection structures 231 are electrically connected to all the light-emitting platforms 210 (first light-emitting platform 211, second light-emitting platform 212, and third light-emitting platform 213). The four top electrical connection structures 231, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b are arranged at intervals around the light-emitting platform 210, and the gaps between adjacent electrical connection structures 230 are filled with an insulating medium 300.

[0061] refer to Figures 3 to 5 The electrical connection structure 230 has at least one groove 400 with an opening facing the light-emitting mesa 210 on the side near the light-emitting mesa 210. At least one end of at least one conductive layer 220 corresponding to at least one light-emitting mesa 210 extends into the groove 400 to form an etch-blocking segment 223 and is electrically connected to the electrical connection structure 230. The space between adjacent light-emitting mesa 210 and below the etch-blocking segment 223 in the groove 400 is filled with an insulating medium 300. In the groove 400, the end of the etch-blocking segment 223 abuts against the bottom wall of the groove 400, that is, the side wall of the electrical connection structure 230 below the etch-blocking segment 223.

[0062] Figure 6a The diagram shows a top view of the Micro LED 200, which includes two light-emitting platforms 210. Figure 6b yes Figure 6a The diagram shows a cross-sectional view of the Micro LED along line a1-a1. Figure 6a and Figure 6b As shown, the light-emitting platform 210 includes a first light-emitting platform 211 and a second light-emitting platform 212. Figure 6a and Figure 6bOther components can be found in [reference]. Figures 2 to 5 The description will not be repeated here.

[0063] Figure 7a yes Figure 3 The image shows a magnified view of the Micro LED200 at point F. (Reference) Figure 7a In some embodiments, the sidewall of the bottom electrical connection structure 232 located below the etching barrier section 223 is inclined, and the end of the etching barrier section 223 abuts against the inclined sidewall of the bottom electrical connection structure 232. The upper end length L2 of the etching barrier section 223 is less than the lower end length L1 of the etching barrier section 223. The lower end length L1 of the etching barrier section 223 is less than the width W1 of the electrical connection structure 230. Figure 7b yes Figure 3 An enlarged view of a modified embodiment of the Micro LED200 at point F shown. (Refer to...) Figure 7b In some embodiments, the sidewall of the bottom electrical connection structure 232 located below the etching barrier section 223 is vertical, and the end of the etching barrier section 223 abuts against the vertical sidewall of the bottom electrical connection structure 232. In some embodiments, the angle between the sidewall of the bottom electrical connection structure 232 below the etching barrier section 223 and the vertical plane is between 0 and 5°. The length L1 of the etching barrier section 223 is less than the width W1 of the electrical connection structure 230.

[0064] In the Micro LED display panel 100 provided in this application, the etched blocking section 223 extends into the electrical connection structure 230, and the electrical connection structures 230 on the upper and lower sides of the etched blocking section 223 are integrally connected. The groove 400 opened on the electrical connection structure 230 can reduce the amount of electrical connection structure 230 used, which helps to reduce the weight of Micro LED.

[0065] In some embodiments, the insulating medium 300 is transparent. In some embodiments, the material of the insulating medium 300 includes one or more combinations of SiO2, SiON, Al2O3, and SiN.

[0066] Figure 8 A schematic diagram of an embodiment is shown, where the top electrical connection structure of the Micro LED200 is a single structure. (Refer to...) Figure 8The number of top electrical connection structures 231 is one. The extensions of the second bottom conductive layer 222b, the third bottom conductive layer 222c, and the top conductive layer 221 (including the first top conductive layer 221a, the second top conductive layer 221b, and the third top conductive layer 221c) are located in different vertical sections, and the corresponding first bottom electrical connection structures 232a, the second bottom electrical connection structures 232b, and the top electrical connection structures 231 are spaced apart and surround the light-emitting platform 210. In this modified embodiment, the number of top electrical connection structures 231 is one. Compared with the embodiment in which four top electrical connection structures 231 are spaced apart at four different locations, the gap between adjacent electrical connection structures 230 can be reduced, thereby improving the light isolation effect. (Reference) Figure 8 The circumferential extension length of the top electrical connection structure 231 is greater than the circumferential extension lengths of the first bottom electrical connection structure 232a and the second bottom electrical connection structure 232b, respectively. In some embodiments, the circumferential extension lengths of the top electrical connection structure 231, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b are equal.

[0067] refer to Figures 3 to 5 The electrical connection structure 230 further includes a top series structure 233, which is disposed above the topmost light-emitting platform 210 (i.e., the third light-emitting platform 213) and surrounds the topmost light-emitting platform 210 (i.e., the third light-emitting platform 213). The top series structure 233 is electrically connected to all the top electrical connection structures 231. An insulating medium 300 is also filled between the top surfaces of the top series structure 233 and the bottom electrical connection structure 232. The top series structure 233 is not electrically connected to any of the bottom electrical connection structures 232.

[0068] refer to Figure 1 In some embodiments, the top electrical connection structures 231 of adjacent Micro LEDs 200 are electrically connected to each other, and the bottom electrical connection structures 232 of adjacent Micro LEDs 200 are mutually insulated.

[0069] Preferably, the top of the electrical connection structure 230 is higher than or equal to the top of the topmost light-emitting platform 210 (the third light-emitting platform 213). Figure 9 yes Figure 2 A schematic diagram of a modified embodiment of the cross-sectional structure of the Micro LED along line b shown. (Reference) Figure 9 In some embodiments, the top of the electrical connection structure 230 is lower than the top of the topmost light-emitting platform 210, and the top of the electrical connection structure 230 is filled with an insulating medium 300 or an opaque material 232d (or a reflective material).

[0070] refer to Figure 5 The grooves 400 corresponding to the top conductive layers 221 above different light-emitting platforms 210 are located in the same vertical section, and the top conductive layers 221 on different light-emitting platforms 210 are electrically connected to the same top electrical connection structure 231. Specifically, the first top conductive layer 221a, the second top conductive layer 221b, and the third top conductive layer 221c are respectively electrically connected to the top electrical connection structure 231.

[0071] refer to Figure 5 The top conductive layer 221 includes a first electrical connection segment 2211, a second electrical connection segment 2212, and an inclined connection segment 2213. One end of the inclined connection segment 2213 is connected to the first electrical connection segment 2211, and the other end is connected to the second electrical connection segment 2212. The first electrical connection segment 2211 extends into the groove 400 to form an etching blocking segment 223. The second electrical connection segment 2212 is electrically connected to the light-emitting platform 210. The first electrical connection segment 2211 and the second electrical connection segment 2212 have a predetermined height difference. (Reference) Figure 5 In some embodiments, the top of the first electrical connection segment 2211 is lower than the top of the second electrical connection segment 2212, and the height difference between the first electrical connection segment 2211 and the second electrical connection segment 2212 is less than the thickness of the corresponding light-emitting platform 210, thereby reducing the length of the groove 400 corresponding to the top conductive layer 221. Figure 10 yes Figure 2 A schematic diagram of a modified embodiment of the Micro LED cross-sectional structure along the cc line shown. (Reference) Figure 10 In some embodiments, taking the third light-emitting platform 213 as an example, the top of its first electrical connection segment 2211 is higher than the top of the second electrical connection segment 2212. The height difference between the first electrical connection segment 2211 and the second electrical connection segment 2212 is greater than the thickness of the corresponding light-emitting platform 210 (i.e., the third light-emitting platform 213), which increases the length of the groove 400 corresponding to the top conductive layer 221. Figure 11 yes Figure 2 A schematic diagram of another modified embodiment of the Micro LED cross-sectional structure along the cc line shown. (Refer to...) Figure 11 In some embodiments, the conductive layer 220 extends horizontally into the groove 400. In this example, the first electrical connection segment 2211 is flush with the second electrical connection segment 2212, and there is no need to tilt the connection segment 2213.

[0072] refer to Figures 3 to 5The Micro LED 200 further includes a bottom connecting platform 240, which is located between the bottommost light-emitting platform 210 (i.e., the first light-emitting platform 211) and the driving backplate 120, and is electrically connected to the driving backplate 120 and the bottommost light-emitting platform 210 (i.e., the first light-emitting platform 211). The Micro LED 200 further includes a top connecting platform 214, which is located between the first light-emitting platform 211 and the first top conductive layer 221a, and is electrically connected to the first light-emitting platform 211 and the first top conductive layer 221a. The bottom connecting platform 240 and the top connecting platform 214 are made of metal, including one or more of Al, Au, Rh, Ag, Cr, Ti, Pt, Sn, Cu, AuSn, TiW, etc. In some embodiments, the top and bottom surfaces of the light-emitting platform 210 are both circular, with the diameter of the top surface being smaller than the diameter of the bottom surface. The top surface of the bottom connecting platform 240 is also circular, with its diameter equal to the diameter of the bottom surface of the bottommost light-emitting platform 210 (i.e., the first light-emitting platform 211). The diameter of the top surface of the bottom connecting platform 240 is smaller than the diameter of its bottom surface. A first bottom conductive layer 222a is disposed between the bottom connecting platform 240 and the first light-emitting platform 211, forming an ohmic contact layer between them. The first bottom conductive layer 222a and the bottom connecting platform 240 can form an omnidirectional reflector (ODR) structure with high reflection efficiency. In some embodiments, the first bottom conductive layer 222a is one or more of a combination of a TCO (transparent conductive oxide) film, an ITO (Indium Tin Oxide) film, an AZO (Antimony doped Zinc Oxide) film, an ATO (Antimony doped Tin Oxide) film, and an FTO (Fluorine doped Tin Oxide) film.

[0073] In some embodiments, no bottom connection platform 240 is provided between the first light-emitting platform 211 and the driving back plate 120, and an insulating medium 300 is filled between the first bottom conductive layer 222a and the driving back plate 120. The bottom electrical connection structure 232 further includes a third bottom electrical connection structure (not shown in the figure), and the end of the first bottom conductive layer 222a extends outward and is electrically connected to the third bottom electrical connection structure.

[0074] The conductive layer 220 is transparent and the material is selected from one or more combinations of ITO (Indium Tin Oxide), FTO (Fluorine-doped Tin Oxide), and AZO (Aluminum-doped Zinc Oxide).

[0075] refer to Figures 3 to 5 The Micro LED 200 further includes a top insulating layer 250. The top insulating layer 250 continuously covers the top surface of the Micro LED. The top insulating layer 250 is transparent and is made of one or more combinations of SiO2, SiN, SiON, or Al2O3.

[0076] refer to Figures 3 to 5 The Micro LED 200 further includes microlenses 260. Each microlens 260 is located above the top insulating layer 250 and covers a pixel area of ​​one Micro LED. The bottom diameter of the microlens 260 is larger than the maximum diameter of the light-emitting mesa 210. The thickness H1 of the microlens 260 is less than or equal to 10 μm. In some embodiments, the material of the microlens 260 is selected from silicon dioxide, photoresist, etc.

[0077] refer to Figures 3 to 5 The driving backplate 120 includes a solder joint group 121 corresponding to the Micro LED 200. The solder joint group 121 includes a first solder joint 1211, a second solder joint 1212, and a third solder joint 1213. The first solder joint 1211 corresponds to and is electrically connected to the bottom connecting platform 240, the second solder joint 1212 corresponds to and is electrically connected to the first bottom electrical connection structure 232a, and the third solder joint 1213 corresponds to and is electrically connected to the second bottom electrical connection structure 232b.

[0078] refer to Figure 3 The thickness H2 of a light-emitting platform 210 ranges from 0.3 μm to 3.5 μm, and the bottom diameter ranges from 0.5 μm to 50 μm. The thickness H3 of the Micro LED 200 (excluding the microlens 260) ranges from 1 μm to 10 μm, and the diameter ranges from 2 μm to 200 μm. The length of the Micro LED display panel ranges from 500 μm to 50000 μm, and the resolution of the array of Micro LEDs in the display panel is one of 320×240, 640×480, 1920×1080, and 2560×1440. In some embodiments, the resolution of the array of Micro LEDs in the display panel can also be other values.

[0079] Figure 12This is a schematic cross-sectional view of two adjacent Micro LEDs according to an embodiment of this application. (Reference) Figure 12 The top conductive layers 221 (i.e., the first top conductive layer 221a) of the two bottom light-emitting platforms 210 (i.e., the first light-emitting platform 211) of the adjacent Micro LED 200 are connected to each other.

[0080] Figure 13a This is a top view of a single Micro LED structure according to another embodiment. Figure 13b It is multiple Figure 13a The diagram shows a top view of the array arrangement of Micro LEDs. Figure 13c yes Figure 13a The diagram shows a cross-sectional view of the Micro LED along line ee. Figure 13d yes Figure 13a The diagram shows a cross-sectional structure of the Micro LED along line ff. Figure 13e yes Figure 13a The diagram shows a cross-sectional view of the Micro LED along line gg. Figure 13f yes Figure 13a The diagram shows a cross-sectional view of the Micro LED along line hh. (Reference) Figure 13a Each conductive layer 220 is electrically connected to an electrical connection structure 230. For example, a first top conductive layer 221a is electrically connected to a first top electrical connection structure 231a, a second top conductive layer 221b is electrically connected to a second top electrical connection structure 232b, and a third top conductive layer 221c is electrically connected to a third top electrical connection structure 232c. A second bottom conductive layer 222b is electrically connected to a first bottom electrical connection structure 232a, and a third bottom conductive layer 222c is electrically connected to a second bottom electrical connection structure 232b. The first top electrical connection structure 231a, the second top electrical connection structure 231b, the third top electrical connection structure 231c, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b are spaced apart from each other. In some embodiments, the relative positions of the first top electrical connection structure 231a, the second top electrical connection structure 231b, the third top electrical connection structure 231c, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b can be adjusted as needed. Figure 13a The positions shown are for illustrative purposes only.

[0081] refer to Figure 13b In an array of multiple Micro LEDs 200, the second top electrical connection structure 231b of one Micro LED 200 and the third top electrical connection structure 231c of another Micro LED 200 are arranged adjacent to each other at intervals.

[0082] refer to Figures 13c to 13f A top conductive layer 221 on a light-emitting mesa 210 is electrically connected to a top electrical connection structure 231. The grooves 400 corresponding to the top conductive layers 221 on different light-emitting mesa 210s are located in different vertical sections. A bottom conductive layer 222 below a light-emitting mesa 210 is electrically connected to a bottom electrical connection structure 232. The grooves 400 corresponding to the bottom conductive layers 222 below different light-emitting mesa 210s are located in different vertical sections. By setting the grooves 400 corresponding to the top conductive layers 221 on different light-emitting mesa 210s in different vertical sections, and setting the grooves 400 corresponding to the bottom conductive layers 222 below different light-emitting mesa 210s in different vertical sections, the etching and filling of the electrical connection structure 230 can be performed after all the light-emitting mesa 210s have been formed during the manufacturing process.

[0083] Some embodiments of this application also provide a method for manufacturing a Micro LED display panel.

[0084] Figure 14 A flowchart illustrating the steps of a method for manufacturing a Micro LED panel according to an embodiment of this application is shown. (Reference) Figure 14 and combined Figure 18 S1 and S2, Figure 19 S1 and S2, and Figure 20 The manufacturing method includes steps S101 to S106, as described in S1 and S2.

[0085] In step S101, a plurality of first bottom conductive layers 222a are formed at a plurality of predetermined locations on the substrate 120. In some embodiments, the substrate 120 is a drive backplate.

[0086] In step S102, a first light-emitting platform 211 is formed on each of the first bottom conductive layers 222a.

[0087] In step S103, a first top conductive layer 221a is formed above each first light-emitting mesa 211. At this point, the Micro LED structure can be seen... Figure 18 S1, Figure 19 S1 and Figure 20 As shown in S1.

[0088] In step S104, an insulating medium is filled around the first light-emitting platform 211 to form a first insulating medium layer 301, and the first insulating medium layer 301 covers the area above the first top conductive layer 221a.

[0089] In step S105, a first etch hole (not shown in the figure) is formed by etching along a first etch path in a preset area between adjacent first light-emitting platforms 211, wherein at least one end of the first top conductive layer 221a is located on the first etch path and forms an etch blocking segment 223, so that the insulating medium located below the etch blocking segment 223 is retained during etching.

[0090] In step S106, conductive material is filled into the first etched hole to form a top electrical connection structure 231 connected to the first top conductive layer 221a, see [link to previous step]. Figure 20 As shown in S2.

[0091] In some implementations, reference Figure 18 , Figure 19 as well as Figure 20 Before forming multiple first bottom conductive layers 222a at multiple preset positions on the substrate 120 in step S101 above, the method further includes: forming a bottom connecting platform 240 on the substrate 120, and forming a first bottom conductive layer 222a on the upper surface of the bottom connecting platform 240.

[0092] In some implementations, reference Figure 18 S1 in Figure 19 S1 and Figure 20 In step S1, before forming the first top conductive layer 221a above each first light-emitting platform 211 in step S103, the method further includes filling the side of the first light-emitting platform 211 with a second insulating dielectric layer 302, wherein the top diameter of the first light-emitting platform 211 is smaller than its bottom diameter. The second insulating dielectric layer 302 prevents the first top conductive layer 221a from contacting the side of the first light-emitting platform 211.

[0093] refer to Figure 15 and combined Figure 18 S3-S5 in Figure 19 S3-S5 and Figure 20 In some embodiments, steps S3-S5, after step S106, further include steps S201 to S208.

[0094] In step S201, a second etch hole (not shown in the figure) is formed by etching along a second etch path in a preset area between adjacent first light-emitting platforms 211.

[0095] In step S202: Conductive material is filled into the second etched hole to form a first bottom electrical connection structure 232a.

[0096] In step S203, a third insulating dielectric layer 303 is laid on top of the first top conductive layer 221a, such that the third insulating dielectric layer 303 covers the top surface of the top electrical connection structure 231 and the top surface of the first bottom electrical connection structure 232a.

[0097] In step S204, a second bottom conductive layer 222b is formed above the third insulating dielectric layer 303.

[0098] In step S205, a second light-emitting platform 212 is formed above the second bottom conductive layer 222b.

[0099] In step S206, a second top conductive layer 221b is formed above the second light-emitting platform 212.

[0100] In step S207, an insulating medium is filled around the second light-emitting platform 212 to form a fourth insulating medium layer 304, such that the fourth insulating medium layer 304 covers the top surface of the second top conductive layer 221b.

[0101] In step S208, insulating medium is etched along the first etching path to the top electrical connection structure 231 between adjacent second light-emitting platforms 212, and then conductive material is injected to increase the height of the top electrical connection structure 231; insulating medium is etched along the second etching path to the first bottom electrical connection structure 232a, and then conductive material is injected to increase the height of the first bottom electrical connection structure 232a; wherein the end of the second top conductive layer 221b is located in the first etching path, and the second bottom conductive layer 222b is located in the second etching path.

[0102] refer to Figure 18 S4 in Figure 19 S4 and Figure 20 In some embodiments, step S4, prior to step S206, further includes filling a fifth insulating dielectric layer 305 on the side surface of the second light-emitting platform 212, wherein the top diameter of the second light-emitting platform 212 is smaller than its bottom diameter. The fifth insulating dielectric layer 305 prevents the second top conductive layer 221b from contacting the side surface of the second light-emitting platform 212.

[0103] refer to Figure 16 and combined Figure 18 S6 to S8 in Figure 19 S6 to S8 and Figure 20 In some embodiments, steps S6 to S8 are further included after step S106 and before step S203, and steps S301 to S302 are further included after step S208, and steps S303 to S309 are further included.

[0104] In step S301, a third etch hole (not shown) is formed by etching along a third etch path (not shown) in a preset area between adjacent first light-emitting platforms 211.

[0105] In step S302, a second bottom electrical connection structure 232b is formed by filling the third etched hole with conductive material.

[0106] In step S303, after etching the insulating medium along the third etching path between adjacent second light-emitting mesa 212 down to the second bottom electrical connection structure 232b, conductive material is injected to increase the height of the second bottom electrical connection structure 232b.

[0107] In step S304, a sixth insulating dielectric layer 306 is laid on top of the second top conductive layer 221b, such that the sixth insulating dielectric layer 306 covers the top surfaces of the top electrical connection structure 231, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b.

[0108] In step S305, a third bottom conductive layer 222c is formed above the sixth insulating dielectric layer 306.

[0109] In step S306, a third light-emitting platform 213 is formed above the third bottom conductive layer 222c.

[0110] In step S307, a third top conductive layer 221c is formed above the third light-emitting platform 213.

[0111] In step S308, an insulating medium is filled around the third light-emitting platform 213 to form a seventh insulating medium layer 307, such that the seventh insulating medium layer 307 covers the top surface of the third top conductive layer 221c.

[0112] In step S309, insulating medium is etched along the first etching path to the top electrical connection structure 231 between adjacent third light-emitting platforms 213, and then conductive material is injected to increase the height of the top electrical connection structure 231; insulating medium is etched along the second etching path to the first bottom electrical connection structure 232a, and then conductive material is injected to increase the height of the first bottom electrical connection structure 232a; and insulating medium is etched along the third etching path to the second bottom electrical connection structure 232b, and then conductive material is injected to increase the height of the second bottom electrical connection structure 232b; wherein the end of the third top conductive layer 221c is located in the first etching path, and the end of the third bottom conductive layer 222c is located in the third etching path.

[0113] refer to Figure 18 S7 in Figure 19 S7 and Figure 20In some embodiments, step S7, prior to step S307, further includes filling the side surface of the third light-emitting platform 213 with an eighth insulating dielectric layer 308, wherein the top diameter of the third light-emitting platform 213 is smaller than its bottom diameter. The eighth insulating dielectric layer 308 prevents the third top conductive layer 221c from contacting the side surface of the third light-emitting platform 213.

[0114] refer to Figure 17 and combined Figure 18 S9 and S10 in Figure 19 S9 and S10 in the middle and Figure 20 In some embodiments, the method for manufacturing a Micro LED display panel, after step S309, further includes steps S401 to S405.

[0115] In step S401, a ninth insulating dielectric layer 309 is formed on the top surfaces of the top electrical connection structure 231, the first bottom electrical connection structure 232a, and the second bottom electrical connection structure 232b.

[0116] In step S402, after etching the insulating medium along the first etching path to the top electrical connection structure 231, conductor material is injected to increase the height of the top electrical connection structure 231 to be flush with the ninth insulating medium layer 309.

[0117] In step S403, a conductor material is injected around the pixel region above the ninth insulating dielectric layer 309 to form a top series structure 233, and the top series structure 233 is electrically connected to the top electrical connection structure 231.

[0118] In step S404, a top insulating dielectric layer 250 is formed above the ninth insulating dielectric layer and covers the top series structure 233.

[0119] In step S405, a microlens 260 is formed above the top insulating dielectric layer 250 at a position corresponding to the light-emitting platform (211, 212, 213).

[0120] In some embodiments, the first light-emitting platform 211, the second light-emitting platform 212, and the third light-emitting platform 213 are coaxially arranged.

[0121] Some embodiments of this application also provide another method for manufacturing a Micro LED display panel.

[0122] refer to Figure 21 and combined Figures 13a to 13f A method for manufacturing a Micro LED display panel includes steps S501 and S502.

[0123] In step S501, an array of light-emitting units is formed in an orderly manner at a preset position on the substrate 120. Each light-emitting unit group includes at least two stacked light-emitting units in the vertical direction. Each light-emitting unit includes a light-emitting platform 210 and conductive layers 220 located on the upper and lower sides of the light-emitting platform 210. An insulating medium 300 is filled between adjacent light-emitting units.

[0124] In step S502, at least three etch holes are formed by etching an insulating medium along at least three etch paths located at different vertical cross sections in a preset area between adjacent light-emitting units. The ends of at least three conductive layers corresponding to at least two light-emitting units are located at at least three etch paths, forming three etch blocking segments 223. Conductive material is filled into the at least three etch holes to form at least three electrical connection structures 230, which are respectively electrically connected to at least three conductive layers 220.

[0125] In some embodiments, the method of manufacturing a Micro LED display panel further includes: forming an insulating dielectric layer on top of a light-emitting unit array, such that the insulating dielectric layer covers the top of at least three electrical connection structures 230; etching the insulating dielectric along etching paths corresponding to at least two top conductive layers to expose the top of at least two electrical connection structures corresponding to at least two top conductive layers, wherein the conductive layer located above the light-emitting mesa is the top conductive layer, and injecting conductive material after etching to increase the length of the at least two electrical connection structures corresponding to the at least two top conductive layers to be flush with the insulating dielectric layer; injecting conductive material around the pixel region above the insulating dielectric layer to form a top series structure 233, such that the top series structure 233 is electrically connected to the at least two electrical connection structures 230 corresponding to the at least two top conductive layers. A top insulating dielectric layer is formed above the insulating dielectric layer and covers the top series structure 233; a microlens 260 is formed above the top insulating dielectric layer at a position corresponding to the light-emitting mesa 210.

[0126] In this modified embodiment, the electrical connection structure corresponding to each conductive layer 220 is located in a different vertical section, so that all the light-emitting platforms 210 in the vertical direction are stacked and then uniformly etched and filled to form the electrical connection structure 230.

[0127] The Micro LED display panel provided in this application has at least one groove with an opening facing the light-emitting platform on the side of the electrical connection structure near the light-emitting platform. The end of at least one conductive layer extends into the groove and is electrically connected to the corresponding electrical connection structure. The groove is also filled with an insulating medium, which can reduce the amount of material used in the electrical connection structure and facilitate the integral molding of the electrical connection structure.

[0128] The manufacturing method for the Micro LED display panel provided in this application extends the end of the conductive layer into the etching path to form an etching barrier segment. This allows the insulating dielectric on both sides of the etching barrier segment to be etched together to form an etching hole. Filling the etching hole with conductive material allows the electrical connection structure on both sides of the etching barrier segment to be integrally formed, thereby improving production efficiency. Since the first electrical connection segment of the top conductive layer extends into the etching path to form the etching barrier segment, and the first and second electrical connection segments have a preset height difference, the height of the first electrical connection segment can be higher or lower than that of the second electrical connection segment. Therefore, by adjusting the relative position and height difference between the first and second electrical connection segments, the length of the groove can be adjusted as needed.

[0129] It should be noted that relational terms in this document, such as “first” and “second”, are used only to distinguish an entity or operation from another entity or operation, without requiring or implying any actual relationship or order between these entities or operations. Furthermore, the words “including,” “having,” and “containing,” as well as other similar forms, are intended to be equivalent in meaning and are open-ended; one or more items following any of these words do not imply an exhaustive list of such items or that the list is limited to only one or more items.

[0130] As used herein, unless expressly stated otherwise, the term "or" covers all possible combinations unless impractical. For example, if a component is stated to include A or B, then unless expressly stated otherwise or impractical, the component may include A, or B, or A and B. As a second example, if a component is stated to include A, B, or C, then unless expressly stated otherwise or impractical, the component may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0131] In the foregoing description, numerous specific details have been described, which may vary depending on the implementation. Certain modifications and alterations may be made to the described embodiments. Other embodiments will be apparent to those skilled in the art in light of the specification and practice of this application disclosed herein. The specification and examples are intended to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims. The sequence of steps shown in the accompanying drawings is also intended for illustrative purposes only and is not intended to limit one to any particular order of steps. Therefore, those skilled in the art will understand that these steps may be performed in different orders while achieving the same method.

[0132] Exemplary embodiments have been disclosed in the accompanying drawings and description. However, many variations and modifications can be made to these embodiments. Therefore, although specific terminology has been used, it is used in a general and descriptive sense only and not for limiting purposes.

Claims

1. A method for manufacturing a Micro LED display panel, characterized in that, include: An array of light-emitting units is formed in an orderly manner at a predetermined position on the substrate. Each light-emitting unit group includes at least two stacked light-emitting units in the vertical direction. Each light-emitting unit includes a light-emitting platform and conductive layers located on the upper and lower sides of the light-emitting platform. An insulating medium is filled between adjacent light-emitting units. At least three etch holes are formed by etching an insulating medium along at least three etch paths located at different vertical cross sections in a preset area between adjacent light-emitting units. The ends of at least three conductive layers corresponding to at least two light-emitting units are located at at least three etch paths, forming three etch blocking sections. Conductive material is filled into the at least three etch holes to form at least three electrical connection structures, which are respectively electrically connected to at least three conductive layers.

2. The method for manufacturing a Micro LED display panel according to claim 1, characterized in that, The substrate is a drive backplate.

3. The method for manufacturing a Micro LED display panel according to claim 1, characterized in that, At least two of the light-emitting units in each of the light-emitting units are coaxially arranged, and at least three electrical connection structures are arranged around the light-emitting unit.

4. The method for manufacturing a Micro LED display panel according to claim 1, characterized in that, Further includes: An insulating dielectric layer is formed on top of the light-emitting unit array, such that the insulating dielectric layer covers the top of at least three of the electrical connection structures; The insulating medium is etched along the etching path corresponding to at least two top conductive layers to expose the top of at least two electrical connection structures corresponding to at least two top conductive layers, wherein the conductive layer located above the light-emitting platform is the top conductive layer. After etching, conductive material is injected to increase the length of at least two electrical connection structures corresponding to at least two top conductive layers to be flush with the insulating medium layer. A top series structure is formed by injecting conductive material around the pixel region above the insulating dielectric layer, such that the top series structure is electrically connected to at least two electrical connection structures corresponding to at least two of the top conductive layers.

5. The method for manufacturing a Micro LED display panel according to claim 4, characterized in that, Further includes: A top insulating dielectric layer is formed above the insulating dielectric layer and covers the top series structure; A microlens is formed above the top insulating dielectric layer at a position corresponding to the light-emitting platform.

6. A Micro LED display panel, characterized in that, include: A micro LED array includes multiple micro LEDs. Each micro LED includes at least two light-emitting platforms stacked vertically from bottom to top and conductive layers located on the upper and lower sides of each light-emitting platform. The conductive layers include a top conductive layer disposed above each light-emitting platform and a bottom conductive layer disposed below each light-emitting platform. A driving backplate is disposed at the bottom of the Micro LED array and is used to control multiple Micro LEDs; An electrical connection structure is provided, comprising at least two top electrical connection structures and at least one bottom electrical connection structure. The at least two top electrical connection structures and the at least one bottom electrical connection structure are spaced apart from each other around the light-emitting platform, and are located in different vertical sections. The at least two top electrical connection structures are electrically connected to the at least two top conductive layers, and the at least one bottom electrical connection structure is electrically connected to the at least one bottom conductive layer. The electrical connection structure has a groove with an opening facing the light-emitting platform on the side near the light-emitting platform. At least one end of the at least one conductive layer corresponding to the at least one light-emitting platform includes an etch-blocking segment. The etch-blocking segment extends into the groove and is electrically connected to the electrical connection structure. The space between adjacent light-emitting platforms and the groove are filled with an insulating medium.

7. The Micro LED display panel according to claim 6, characterized in that, The end of the etch-blocking section is flush with the sidewall of the electrical connection structure located below the etch-blocking section.

8. The Micro LED display panel according to claim 6, characterized in that, The top conductive layer includes a first electrical connection segment, a second electrical connection segment, and an inclined connection segment connecting the first electrical connection segment and the second electrical connection segment. The first electrical connection segment extends into the groove to form the etching blocking segment, and the second electrical connection segment is electrically connected to the light-emitting platform. The first electrical connection segment and the second electrical connection segment have a preset height difference.

9. The Micro LED display panel according to claim 8, characterized in that, The top of the first electrical connection segment is higher than the top of the second electrical connection segment.

10. The Micro LED display panel according to claim 8, characterized in that, The top of the first electrical connection segment is lower than the top of the second electrical connection segment.

11. The Micro LED display panel according to claim 8, characterized in that, The top of the first electrical connection segment is flush with the top of the second electrical connection segment.

12. The Micro LED display panel according to any one of claims 6-11, characterized in that, The top and bottom surfaces of the light-emitting platform are circular, with the diameter of the top surface being smaller than the diameter of the bottom surface.

13. The Micro LED display panel according to any one of claims 6-11, characterized in that, The MicroLED further includes a bottom connecting platform located between the bottommost light-emitting platform and the driving backplate, the bottom connecting platform being electrically connected to the driving backplate and the bottommost light-emitting platform.

14. The Micro LED display panel according to claim 13, characterized in that, The bottom connecting platform is made of metal.

15. The Micro LED display panel according to claim 14, characterized in that, The metal material of the bottom connecting platform includes one or more of Al, Au, Rh, Ag, Cr, Ti, Pt, Sn, Cu, AuSn, and TiW.

16. The Micro LED display panel according to claim 13, characterized in that, The top surface of the bottom connecting platform is circular, and the bottom surface of the bottommost light-emitting platform is circular. The diameter of the top surface of the bottom connecting platform is equal to the diameter of the bottom surface of the bottommost light-emitting platform.

17. The Micro LED display panel according to claim 6, characterized in that, The conductive layer is transparent.

18. The Micro LED display panel according to claim 17, characterized in that, The material of the conductive layer is selected from one or more combinations of ITO, FTO, and AZO.

19. The Micro LED display panel according to claim 6, characterized in that, The thickness of the light-emitting mesa ranges from 0.3µm to 3.5µm, and the bottom diameter of the light-emitting mesa ranges from 0.5µm to 50µm.

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