Liquid crystal doped perovskite composite materials and perovskite photodetectors, their fabrication methods and applications

Abstract

This invention relates to the field of perovskite optoelectronic devices, and discloses a liquid crystal-doped perovskite composite material and a perovskite photodetector, as well as their preparation methods and applications. The liquid crystal-doped perovskite composite material contains perovskite material and liquid crystal material; wherein the liquid crystal material contains diacrylate oligomers, and the diacrylate oligomers have the structure shown in formula (1), where n1 and n2 are each independently an integer of 2-5, m1 and m2 are each independently an integer of 3-7, and R1, R2, and R3 are each independently an H or C1-C3 alkyl group. The perovskite photodetector of this invention simultaneously possesses good flexibility, response performance, and stability.

Description

Technical Field

[0001] This invention relates to the field of perovskite optoelectronic device technology, specifically to a liquid crystal doped perovskite composite material and its preparation method, a perovskite photodetector and its preparation method and application. Background Technology

[0002] Over the past decade, with the rise of artificial intelligence, the demand for high-performance photodetectors in human-computer interaction applications has become increasingly prominent, encompassing autonomous driving, environmental monitoring, optical communication, and wearable biosensors. Metal halide perovskites possess excellent photoelectric properties, including a wide light absorption range, tunable bandgap, high extinction coefficient, high charge carrier mobility, and long electron-hole diffusion length. Therefore, these materials have been used as photoactive layers in solar cells, light-emitting diodes, lasers, and photodetectors. Perovskite-based photodetectors can directly convert light signals into electrical signals, playing a crucial role in various fields such as medical imaging, automated production, and military detection. Furthermore, metal halide perovskites are well-suited for low-cost, large-area solution processing, making them a promising alternative to silicon or compound semiconductors currently used in commercial photoelectric conversion applications.

[0003] To achieve more efficient and convenient human-computer interaction applications, researchers have developed various "wearable" strategies, including electronic skin, textiles, wristbands, helmets, patches, and lenses. With the development of artificial intelligence, the interaction between the human body and computers has progressed from buttons to touchscreens and image capture. It is believed that in the near future, a higher level of interaction will be achieved—seamless human-computer interaction in indoor environments. Therefore, the integration of sensing devices places higher demands on the performance of photodetectors. Especially in indoor environments, devices need to possess both high peak response and response rate, as well as good robustness under actual operation, including repeatability, bending resistance, and stability. However, achieving all of these simultaneously is quite difficult. Homogeneous perovskite film formation remains a major challenge in the field. Furthermore, when the detector is bent, the perovskite crystal will crack along the grain boundaries and be damaged. The grain boundary defects will then increase in size, hindering the transport of photogenerated carriers and severely affecting the photoelectric conversion efficiency of the perovskite material.

[0004] Therefore, there is an urgent need to develop a high-performance perovskite material that can simultaneously possess high peak response and response rate, as well as good robustness under practical operation, in order to realize the human-machine interaction application of wearable perovskite photodetectors under indoor ambient light. Summary of the Invention

[0005] The purpose of this invention is to overcome the aforementioned problems in the prior art and provide a liquid crystal-doped perovskite composite material and its preparation method, a perovskite photodetector and its preparation method, and its applications. This perovskite photodetector simultaneously possesses good flexibility, responsiveness, and stability.

[0006] The liquid crystal-doped perovskite composite material and perovskite photodetector of this invention firstly control the growth and crystallization of perovskite on a flexible substrate by doping with liquid crystal material, effectively suppressing grain boundary defects and improving the bending resistance of the perovskite material, thereby improving the response performance and stability of the perovskite photodetector. Secondly, by controlling the thickness of the perovskite film, the peak photocurrent is increased, facilitating signal transmission and reception. Finally, a unique electrode design enables seamless human-computer interaction by recognizing gestures under ambient light. This invention features a simple process, low energy consumption, high precision, and the ability to achieve various action recognitions through electrode design, while also enabling large-scale industrial production.

[0007] To achieve the above objectives, the present invention provides a liquid crystal-doped perovskite composite material, which contains perovskite material and liquid crystal material.

[0008] The liquid crystal material contains diacrylate oligomers, which have the structure shown in formula (1).

[0009]

[0010] In formula (1), n1 and n2 are each independent integers of 2-5, m1 and m2 are each independent integers of 3-7, and R1, R2 and R3 are each independent alkyl groups of H or C1-C3.

[0011] Preferably, n1 and n2 are each an independent integer from 3 to 5, and more preferably 3 or 4.

[0012] Preferably, m1 and m2 are each an independent integer from 3 to 6, and more preferably 3 or 4.

[0013] Preferably, R1, R2 and R3 are each independently H or methyl.

[0014] Preferably, the perovskite material is MAPbI3, FAPbI3, MAPbBr3, FAPbBr3, or (FAPbI3). 1-x (MAPbBr3) x (FAPbBr3) 1-x (MAPbI3) x and Cs a (FA b MA 1-b ) 1-a Pb(Ic Br 1-c One or more of 3.

[0015] Preferably, the content of the diacrylate oligomer is 0.01-0.04 wt% relative to the total weight of the diacrylate oligomer and the perovskite material, more preferably 0.015-0.03 wt%, and even more preferably 0.015-0.25 wt%.

[0016] The second aspect of the present invention provides a method for preparing a liquid crystal doped perovskite composite material, the method comprising: drying a liquid crystal doped perovskite precursor solution containing perovskite material and diacrylate oligomers to obtain a perovskite layer containing a liquid crystal doped perovskite composite material.

[0017] The diacrylate oligomer has the structure shown in formula (1).

[0018]

[0019] In formula (1), n1 and n2 are each independent integers of 2-5, m1 and m2 are each independent integers of 3-7, and R1, R2 and R3 are each independent alkyl groups of H or C1-C3.

[0020] Preferably, n1 and n2 are each an independent integer from 3 to 5, and more preferably 3 or 4.

[0021] Preferably, m1 and m2 are each an independent integer from 3 to 6, and more preferably 3 or 4.

[0022] Preferably, R1, R2 and R3 are each independently H or methyl.

[0023] Preferably, the perovskite material is MAPbI3, FAPbI3, MAPbBr3, FAPbBr3, or (FAPbI3). 1-x (MAPbBr3) x (FAPbBr3) 1-x (MAPbI3) x and Cs a (FA b MA 1-b ) 1-a Pb(I c Br 1-c One or more of 3.

[0024] Preferably, the amount of the diacrylate oligomer is 0.01-0.04 wt% relative to the total weight of the diacrylate oligomer and the perovskite material, more preferably 0.015-0.03 wt%, and even more preferably 0.015-0.25 wt%.

[0025] Preferably, the solvent of the liquid crystal doped perovskite precursor solution is one or more of DMF, DMSO, DMAc, and NMP, preferably a mixed solvent of DMF and DMSO, and more preferably the volume ratio of DMF to DMSO is 1:0.05-0.5.

[0026] Preferably, the drying temperature is 90-110°C, more preferably 100-105°C.

[0027] A third aspect of the present invention provides a perovskite photodetector comprising a perovskite layer, wherein the perovskite layer comprises the liquid crystal-doped perovskite composite material of the present invention described above, or the liquid crystal-doped perovskite composite material obtained by the preparation method of the present invention described above.

[0028] Preferably, the thickness of the perovskite layer is 350-1800 nm, and more preferably 1100-1200 nm.

[0029] Preferably, the perovskite layer further includes a substrate layer and an electrode layer. Preferably, the substrate layer is a flexible substrate, and more preferably, it is a polyvinyl alcohol film, a polyimide film, or a polyester film.

[0030] A fourth aspect of the present invention provides a method for fabricating a perovskite photodetector, the method comprising forming a perovskite layer using the fabrication method described above.

[0031] Preferably, the thickness of the perovskite layer is 350-1800 nm, and more preferably 1100-1200 nm.

[0032] Preferably, the perovskite layer is formed on a substrate layer, and more preferably, the substrate layer is a flexible substrate, or more preferably, a polyvinyl alcohol film, a polyimide film, or a polyester film.

[0033] The fifth aspect of the present invention provides the application of the liquid crystal doped perovskite composite material of the present invention, the liquid crystal doped perovskite composite material obtained by the preparation method of the present invention, the perovskite photodetector of the present invention, or the perovskite photodetector obtained by the preparation method of the present invention in human-machine non-sensory interaction, photosensitive sensor or indoor photoelectric sensor.

[0034] Through the above technical solutions, the perovskite layer prepared using the liquid crystal-doped perovskite composite material and method of this invention exhibits high crystallinity and effectively suppresses grain boundary defects, improving the bending resistance of the perovskite material, thereby meeting the performance and stability requirements of wearable photodetectors. Secondly, by controlling the thickness of the perovskite film, the peak photocurrent is increased, facilitating signal transmission and reception. Furthermore, it can be prepared using printing methods to achieve large-area industrial production. In addition, electrode pattern design can be used to realize the recognition of various actions or images. This invention is beneficial for realizing human-computer interaction applications of wearable perovskite photodetectors and can promote the commercial application of seamless human-computer interaction to a certain extent. Attached Figure Description

[0035] Figure 1 This is a schematic flowchart of the preparation method of the liquid crystal doped perovskite composite material of the present invention.

[0036] Figure 2 Scanning electron microscope (SEM) images of perovskite thin films prepared from liquid crystal-doped perovskite precursor solutions with different mass contents (scale bar: 500 nm).

[0037] Figure 3 The images shown are scanning electron microscope images and photocurrent values ​​(scale bar is 500 nm) corresponding to different perovskite film thicknesses controlled in this invention.

[0038] Figure 4 This refers to the on / off ratio of the perovskite photodetector of the present invention under white light conditions.

[0039] Figure 5 The switching response rate of the perovskite photodetector of the present invention under white light environment is given.

[0040] Figure 6 This is a schematic diagram of the perovskite photodetector of the present invention performing motion recognition under ambient light.

[0041] Figure 7 This demonstrates the stability exhibited by the perovskite photodetector of the present invention after thousands of bending cycles.

[0042] Figure 8 The perovskite photodetector of this invention exhibits performance stability after thousands of hours of use. Detailed Implementation

[0043] The endpoints and any values ​​of the ranges disclosed herein are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of the various ranges, the endpoint values ​​of the various ranges and individual point values, and individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed herein.

[0044] The first aspect of the present invention provides a liquid crystal-doped perovskite composite material, which comprises a perovskite material and a liquid crystal material; wherein the liquid crystal material comprises a diacrylate oligomer (hereinafter also referred to as a liquid crystal oligomer), and the diacrylate oligomer has the structure shown in formula (1).

[0045]

[0046] In formula (1), n1 and n2 are each independent integers of 2-5, m1 and m2 are each independent integers of 3-7, and R1, R2 and R3 are each independent alkyl groups of H or C1-C3.

[0047] Among them, the C1-C3 alkyl groups include methyl, ethyl, n-propyl and isopropyl.

[0048] According to the present invention, preferably, n1 and n2 are each independently an integer of 3-5, more preferably 3 or 4; preferably, m1 and m2 are each independently an integer of 3-6, more preferably 3 or 4; preferably, R1, R2 and R3 are each independently H or methyl.

[0049] By employing the perovskite material and liquid crystal material (LC) of the present invention, such as Figure 1 As shown, liquid crystal materials can form hydrogen bonds with perovskite materials, thereby controlling the growth and crystallization of perovskite on flexible substrates, effectively suppressing grain boundary defects, and improving the bending resistance of perovskite materials, thus improving the response performance and stability of perovskite photodetectors.

[0050] The diacrylate oligomers of the present invention can be obtained, for example, by end-capping a diacrylate compound with a dithiol. For example, they can be obtained by reacting a diacrylate compound of formula (2) with a dithiol of formula (3).

[0051]

[0052] In equation (2), m1, m2, R1, R2, and R3 are the same as in equation (1). In equation (3), n is the same as n1 or n2 in equation (1).

[0053] According to a preferred embodiment of the present invention, the diacrylate compound may be a diacrylate derivative such as 1,4-bis-[4-(3-acryloyloxypropoxy)benzoyloxy]-2-methylbenzene (RM257, i.e., the compound in formula (2) where m1 = m2 = 3) or 1,4-bis-[4-(6-acryloyloxyhexyloxy)benzoyloxy]-2-methylbenzene (RM82, i.e., the compound in formula (2) where m1 = m2 = 6). The dithiol may be, for example, 1,3-propanedithiol or 1,5-pentanedithiol.

[0054] According to the present invention, the perovskite material interacts with diacrylate oligomers to form an ordered structure. Preferably, the perovskite material can be, for example, MAPbI3, FAPbI3, MAPbBr3, FAPbBr3, or (FAPbI3). 1-x (MAPbBr3) x (FAPbBr3) 1-x (MAPbI3) x and Cs a (FA b MA 1-b ) 1-a Pb(I c Br 1-c One or more of (3), preferably MAPbI3, FAPbI3, or (FAPbI3). 0.85 (MAPbBr3) 0.15 Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 3. In the above formula, x, a, b and c are each an independent number between 0 and 1. Preferably, x is between 0 and 0.5, a is between 0 and 0.2, b is between 0.8 and 1 and c is between 0.8 and 1.

[0055] To improve the performance of the liquid crystal doped perovskite composite material, preferably, the content of the diacrylate oligomer in the liquid crystal doped perovskite composite material is 0.01-0.04 wt%, more preferably 0.015-0.03 wt%, and more preferably 0.015-0.25 wt%, relative to the total weight of the diacrylate oligomer and the perovskite material.

[0056] A second aspect of the present invention provides a method for preparing a liquid crystal doped perovskite composite material, the method comprising: drying a liquid crystal doped perovskite precursor solution (hereinafter also referred to as a liquid crystal doped perovskite precursor solution) containing perovskite material and diacrylate oligomers to obtain a liquid crystal doped perovskite composite material; wherein the diacrylate oligomers have the structure shown in formula (1) below.

[0057]

[0058] In formula (1), n1 and n2 are each independent integers of 2-5, m1 and m2 are each independent integers of 3-7, and R1, R2 and R3 are each independent alkyl groups of H or C1-C3.

[0059] The aforementioned diacrylate oligomers and perovskite materials can be the same as those in the first aspect of this invention.

[0060] To improve the performance of the prepared liquid crystal doped perovskite composite material, preferably, in the liquid crystal doped perovskite precursor solution, the amount of the diacrylate oligomer is 0.01-0.04 wt%, more preferably 0.015-0.03 wt%, and more preferably 0.015-0.25 wt%, relative to the total weight of the diacrylate oligomer and the perovskite material.

[0061] According to the present invention, the solvent in the liquid crystal doped perovskite precursor solution can be appropriately selected according to the requirements for forming the perovskite layer. For example, it can be an organic solvent such as DMF, DMSO, DMAc, NMP, etc., preferably DMF and / or DMSO, preferably a mixed solvent of DMF and DMSO, more preferably the volume ratio of DMF to DMSO is 1:0.05-0.5, and more preferably 1:0.8-0.2.

[0062] According to the present invention, the liquid crystal doped perovskite precursor solution can be formed by first dissolving the perovskite material and then adding a solution of diacrylate oligomers. Stirring and heating can be used during the dissolution process, with the heating temperature, for example, 50-70°C.

[0063] According to the present invention, a perovskite layer can be formed by coating (e.g., spin-coating) a liquid crystal-doped perovskite precursor solution as needed and then drying it by heating. Preferably, the drying temperature is 90-110°C, more preferably 100-105°C. Furthermore, after coating the liquid crystal-doped perovskite precursor solution, a perovskite wet film can be prepared by an anti-solvent method, followed by drying. Examples of usable anti-solvents include toluene (Tol), chlorobenzene (CB), isopropanol (IPA), and chloroform (CF).

[0064] A third aspect of the present invention provides a perovskite photodetector comprising a perovskite layer, wherein the perovskite layer comprises the liquid crystal-doped perovskite composite material of the first aspect of the present invention, or the liquid crystal-doped perovskite composite material obtained by the preparation method of the second aspect of the present invention.

[0065] The perovskite photodetector may include a substrate layer, an electrode layer, and a perovskite layer. The substrate layer is preferably a flexible substrate, such as a polyvinyl alcohol film, a polyimide film, or a polyester film.

[0066] To improve the peak photocurrent of the perovskite photodetector, the thickness of the perovskite layer is preferably 350-1800 nm, and more preferably 1100-1200 nm.

[0067] The fourth aspect of the present invention provides a method for fabricating a perovskite photodetector, the method comprising forming a perovskite layer by the fabrication method of the second aspect of the present invention described above.

[0068] Preferably, the perovskite layer is formed on a substrate layer, and more preferably, the substrate layer is a flexible substrate, such as a polyvinyl alcohol film, a polyimide film, or a polyester film.

[0069] The method for fabricating the perovskite photodetector of the fourth aspect of this invention can be used to fabricate the perovskite photodetector of the third aspect. For example... Figure 1 As shown, the preparation method may include, for example, the following steps:

[0070] (1) Form an electrode layer and a base layer (such as a flexible film) on the substrate layer;

[0071] (2) A liquid crystal doped perovskite precursor solution is coated on a substrate layer and a perovskite wet film is formed by anti-solvent method. Then, the film is annealed to obtain a perovskite layer.

[0072] (3) Separate the flexible substrate from the substrate layer to obtain a flexible perovskite photodetector.

[0073] In step (1), the substrate is a rigid substrate, such as a glass substrate. Electrode patterns can be pre-formed on a flexible substrate, and then the flexible substrate can be flattened and fixed onto the substrate.

[0074] According to a preferred embodiment of the present invention, the preparation method may include, for example, the following steps:

[0075] (1) PDMS is dropped onto a cleaned glass slide and spread evenly on the glass slide by spin coating. A flexible substrate with a special electrode pattern is laid flat on the glass substrate, flattened, and heated (placed on a hot table at 70-90℃ for 2-4 hours) to make the flexible substrate flat and fixed on the glass substrate;

[0076] (2) A liquid crystal doped perovskite precursor solution is dropped onto a flexible substrate, and a perovskite wet film is prepared by spin coating (speed for example, 500-4000 rpm) and adding antisolvent (e.g., CB, Tol, IPA, CF, etc.). Then, the film is dried and annealed (temperature 100-105℃, time 10-15min) to obtain a perovskite layer.

[0077] (3) The flexible substrate can be peeled off from the glass substrate to obtain a flexible perovskite photodetector.

[0078] The fifth aspect of the present invention provides the application of the liquid crystal doped perovskite composite material of the present invention, the liquid crystal doped perovskite composite material obtained by the preparation method of the present invention, the perovskite photodetector of the present invention, or the perovskite photodetector obtained by the preparation method of the present invention in human-machine non-sensory interaction, photosensitive sensor or indoor photoelectric sensor.

[0079] According to the present invention, the implementation process of a human-computer seamless interaction application may include the following steps:

[0080] (1) Connect the perovskite photodetector to the computer through the designed external circuit;

[0081] (2) Place the detector under ambient light and make a hand gesture above it;

[0082] (3) The computer program detects and identifies the changes in photocurrent and finally outputs the identification results.

[0083] Preferably, the human-computer interaction is performed under indoor ambient light.

[0084] The present invention will be described in detail below through examples. Unless otherwise stated, the raw materials and reagents used in the following examples are commercially available products or can be prepared by known methods.

[0085] In the following examples, the liquid crystal oligomer LC used is a compound in formula (1) in which n1 and n2 are both 3, m1 and m2 are both 3, R1 and R3 are both H, and R2 is methyl, and its structure is shown in formula (4).

[0086]

[0087] The liquid crystal oligomer LC is a short-chain mesocrystalline dithiol-terminated oligomer generated by prepolymerizing RM257, which has the structure shown in formula (5), with 1,3-dipropanethiol at a molar ratio of 1:2 using DBU (1,8-diazabicyclo[5.4.0]undec-7-ene) as a catalyst.

[0088]

[0089] In the following embodiments, unless otherwise stated, the fabrication process of the flexible wearable perovskite photodetector is as follows:

[0090] (1) PDMS was dropped onto a cleaned glass slide and 100 μl of PDMS was evenly spread on the glass slide by spin coating. A PI flexible film with an electrode pattern was laid flat on the glass substrate and pressed flat with a weight of appropriate size. The film was then heated on an 80°C hot table for 2 hours to make the flexible film flat and fixed on the glass substrate.

[0091] (2) 40 μl of liquid crystal doped perovskite precursor solution was dropped onto a flexible film. A wet perovskite film was prepared by spin coating at 4000 rpm and adding antisolvent (chlorobenzene, 120 μl). The film was then dried and annealed (100 °C, 10 min) to obtain a liquid crystal doped perovskite layer.

[0092] (3) The flexible film is peeled off from the glass substrate to obtain the flexible wearable perovskite photodetector.

[0093] Example 1

[0094] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.01 wt% into a MAPbI3 perovskite precursor solution.

[0095] Preparation steps:

[0096] (1) Dissolve 214.65 mg MAI (methyl iodide) and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form MAPbI3 perovskite precursor solution.

[0097] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0098] (3) Add the LC solution to the MAPbI3 perovskite precursor solution so that the amount of LC is 0.01wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60℃ for 2h to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0099] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0100] Example 2

[0101] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.02 wt% into a MAPbI3 perovskite precursor solution.

[0102] Preparation steps:

[0103] (1) Dissolve 214.65 mg MAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form a MAPbI3 perovskite precursor solution.

[0104] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0105] (3) Add the LC solution to the MAPbI3 perovskite precursor solution so that the amount of LC is 0.02wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60℃ for 2h to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0106] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0107] Example 3

[0108] The liquid crystal doped perovskite precursor solution in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.03 wt% into a MAPbI3 perovskite precursor solution.

[0109] Preparation steps:

[0110] (1) Dissolve 214.65 mg MAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form a MAPbI3 perovskite precursor solution.

[0111] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0112] (3) Add the LC solution to the MAPbI3 perovskite precursor solution so that the amount of LC is 0.03wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0113] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0114] Example 4

[0115] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.04 wt% into a MAPbI3 perovskite precursor solution.

[0116] Preparation steps:

[0117] (1) Dissolve 214.65 mg MAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form a MAPbI3 perovskite precursor solution.

[0118] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0119] (3) Add the LC solution to the MAPbI3 perovskite precursor solution so that the amount of LC is 0.04wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60℃ for 2h to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0120] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0121] Example 5

[0122] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.01 wt% into an FAPbI3 perovskite precursor solution.

[0123] Preparation steps:

[0124] (1) Dissolve 237.8 mg FAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form FAPbI3 perovskite precursor solution.

[0125] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0126] (3) Add the LC solution to the FAPbI3 perovskite precursor solution so that the amount of LC is 0.01wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot plate at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0127] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0128] Example 6

[0129] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.02 wt% into an FAPbI3 perovskite precursor solution.

[0130] Preparation steps:

[0131] (1) Dissolve 237.8 mg FAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form FAPbI3 perovskite precursor solution.

[0132] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0133] (3) Add the LC solution to the FAPbI3 perovskite precursor solution so that the amount of LC is 0.02wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60℃ for 2h to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0134] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0135] Example 7

[0136] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.03 wt% into an FAPbI3 perovskite precursor solution.

[0137] Preparation steps:

[0138] (1) Dissolve 237.8 mg FAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form FAPbI3 perovskite precursor solution.

[0139] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0140] (3) Add the LC solution to the FAPbI3 perovskite precursor solution so that the amount of LC is 0.03wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0141] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0142] Example 8

[0143] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping a liquid crystal solution with a mass fraction of 0.04 wt% into an FAPbI3 perovskite precursor solution.

[0144] Preparation steps:

[0145] (1) Dissolve 237.8 mg FAI and 622.35 mg PbI2 in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form FAPbI3 perovskite precursor solution.

[0146] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0147] (3) Add the LC solution to the FAPbI3 perovskite precursor solution so that the amount of LC is 0.04wt% relative to the total weight of LC and perovskite material. Heat and stir on a hot plate at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining the liquid crystal doped perovskite precursor solution.

[0148] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0149] Example 9

[0150] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping (FAPbI3) with a liquid crystal solution having a mass fraction of 0.01 wt%. 1-x (MAPbBr3) x The perovskite precursor solution is prepared, and the value of x is 0≤x≤1. Here, we take x=0.15 as an example.

[0151] Preparation steps:

[0152] (1) Dissolve 197.4 mg FAI, 529 mg PbI2, 74.7 mg PbBr2 and 22.7 mg MABr in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form (FAPbI3). 1-x (MAPbBr3) x Perovskite precursor solution.

[0153] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0154] (3) Add the LC solution to (FAPbI3) 1-x (MAPbBr3) x In the perovskite precursor solution, the amount of LC is 0.01 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0155] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0156] Example 10

[0157] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping (FAPbI3) with a liquid crystal solution having a mass fraction of 0.02 wt%. 1-x (MAPbBr3) x The perovskite precursor solution is prepared, and the value of x is 0≤x≤1. Here, we take x=0.15 as an example.

[0158] Preparation steps:

[0159] (1) Dissolve 197.4 mg FAI, 529 mg PbI2, 74.7 mg PbBr2 and 22.7 mg MABr in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form (FAPbI3). 1-x (MAPbBr3) x Perovskite precursor solution.

[0160] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0161] (3) Add the LC solution to (FAPbI3) 1-x (MAPbBr3) xIn the perovskite precursor solution, the amount of LC is 0.02 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0162] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0163] Example 11

[0164] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping (FAPbI3) with a liquid crystal solution having a mass fraction of 0.03 wt%. 1-x (MAPbBr3) x The perovskite precursor solution is prepared, and the value of x is 0≤x≤1. Here, we take x=0.15 as an example.

[0165] Preparation steps:

[0166] (1) Dissolve 197.4 mg FAI, 529 mg PbI2, 74.7 mg PbBr2 and 22.7 mg MABr in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form (FAPbI3). 1-x (MAPbBr3) x Perovskite precursor solution.

[0167] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0168] (3) Add the LC solution to (FAPbI3) 1-x (MAPbBr3) x In the perovskite precursor solution, the amount of LC is 0.03 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0169] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0170] Example 12

[0171] The liquid crystal doped perovskite precursor solution described in this embodiment is prepared by doping (FAPbI3) with a liquid crystal solution having a mass fraction of 0.04 wt%. 1-x (MAPbBr3) xThe perovskite precursor solution is prepared, and the value of x is 0≤x≤1. Here, we take x=0.15 as an example.

[0172] Preparation steps:

[0173] (1) Dissolve 197.4 mg FAI, 529 mg PbI2, 74.7 mg PbBr2 and 22.7 mg MABr in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form (FAPbI3). 1-x (MAPbBr3) x Perovskite precursor solution.

[0174] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0175] (3) Add the LC solution to (FAPbI3) 1-x (MAPbBr3) x In the perovskite precursor solution, the amount of LC is 0.04 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0176] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0177] Example 13

[0178] The liquid crystal-doped perovskite precursor solution described in this embodiment is prepared by doping Cs with a liquid crystal solution having a mass fraction of 0.01 wt%. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 It was prepared from a perovskite precursor solution.

[0179] Preparation steps:

[0180] (1) Dissolve 183 mg FAI, 24.4 mg MABr, 516.5 mg PbI2, 84.7 mg PbBr2 and 17.5 mg CsI in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br0.17 )3 Perovskite precursor solution.

[0181] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0182] (3) Add the LC solution to Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 In the perovskite precursor solution, the amount of LC is 0.01 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0183] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0184] Example 14

[0185] The liquid crystal-doped perovskite precursor solution described in this embodiment is prepared by doping Cs with a liquid crystal solution having a mass fraction of 0.02 wt%. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 It was prepared from a perovskite precursor solution.

[0186] Preparation steps:

[0187] (1) Dissolve 183 mg FAI, 24.4 mg MABr, 516.5 mg PbI2, 84.7 mg PbBr2 and 17.5 mg CsI in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite precursor solution.

[0188] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0189] (3) Add the LC solution to Cs 0.05 (FA 0.83 MA 0.17 )0.95 Pb(I 0.83 Br 0.17 In the perovskite precursor solution, the amount of LC is 0.02 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot plate at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0190] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0191] Example 15

[0192] The liquid crystal-doped perovskite precursor solution described in this embodiment is prepared by doping Cs with a liquid crystal solution having a mass fraction of 0.03 wt%. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 It was prepared from a perovskite precursor solution.

[0193] Preparation steps:

[0194] (1) Dissolve 183 mg FAI, 24.4 mg MABr, 516.5 mg PbI2, 84.7 mg PbBr2 and 17.5 mg CsI in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite precursor solution.

[0195] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0196] (3) Add the LC solution to Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 In the perovskite precursor solution, the amount of LC is 0.03 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix the LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0197] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0198] Example 16

[0199] The liquid crystal-doped perovskite precursor solution described in this embodiment is prepared by doping Cs with a liquid crystal solution having a mass fraction of 0.04 wt%. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 It was prepared from a perovskite precursor solution.

[0200] Preparation steps:

[0201] (1) Dissolve 183 mg FAI, 24.4 mg MABr, 516.5 mg PbI2, 84.7 mg PbBr2 and 17.5 mg CsI in a mixed solvent of 900 μL DMF and 100 μL DMSO, heat and stir on a hot plate at 60 °C for 2 h to form CsI. 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 Perovskite precursor solution.

[0202] (2) Dissolve the liquid crystal oligomer (LC) in DMSO, heat and stir on a hot plate at 60°C for 2 hours to form an LC solution.

[0203] (3) Add the LC solution to Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(I 0.83 Br 0.17 )3 In the perovskite precursor solution, the amount of LC is 0.04 wt% relative to the total weight of LC and perovskite material. The solution is heated and stirred on a hot stage at 60°C for 2 hours to fully mix LC with the perovskite precursor solution, thereby obtaining a liquid crystal doped perovskite precursor solution.

[0204] Flexible wearable perovskite photodetectors were fabricated using the aforementioned liquid crystal-doped perovskite precursor solution.

[0205] Test Example 1

[0206] Images of the perovskite photodetectors prepared in Examples 1-4 above were captured using a scanning electron microscope (Hitachi SU-8020), as shown below. Figure 2 As shown.

[0207] from Figure 2 It is known that the preferred concentration range of liquid crystal doping is 0.01-0.04 wt%, more preferably 0.015-0.025 wt%, and the device with LC doping concentration of 0.02 wt% in Example 2 has the best crystal performance. Therefore, the optimal concentration of liquid crystal doping is 0.02 wt%.

[0208] Test Example 2

[0209] To further improve the photocurrent output, the perovskite film thickness was controlled by adjusting different rotation speeds. A perovskite photodetector was fabricated using the method in Example 2, except that it was fabricated at different rotation speeds (4000 rpm, 2000 rpm, 1000 rpm, and 500 rpm, respectively, corresponding to…). Figure 3 In the process of spin coating (ad), liquid crystal-doped perovskite photodetectors with different film thicknesses are finally obtained, such as... Figure 3 As shown in ad, Figure 3 The film thicknesses of ad in the samples are 400-500nm, 800-900nm, 1100-1200nm, and 1600-1800nm, respectively.

[0210] The electrical performance of perovskite photodetectors with different film thicknesses was tested using a FET synthesis fabrication characterization-semiconductor performance testing system (model 4200-SCS) at an illumination of 8 × 10⁻⁶. 4 Lux (approximately equal to 11.68 mW / cm² at a 555 nm light source) 2 The photocurrent generated under light intensity (power density) such as Figure 3 The scanning electron microscope (SEM) images of each perovskite photodetector are shown above. Figure 3 As shown in the lower section.

[0211] from Figure 3 It can be seen that as the perovskite film thickness increases from 400 nm to 1200 nm, the photocurrent correspondingly increases from 1.6 × 10⁻⁶. -7 A increased to 6.2 × 10 -6 A increased by 40 times, with almost no loss in the on / off ratio, which provides a prerequisite for output under ambient light. However, as the thickness of the perovskite film further increased to 1800 nm, large-area crystal defects appeared in the perovskite material due to the solvent not evaporating in time during annealing, and the photocurrent did not increase further with the increase in thickness, indicating that a perovskite film with a thickness of 1200 nm is sufficient to fully utilize the incident light. Therefore, the optimal film thickness can be determined to be 400-1200 nm (corresponding to a spin coating speed of 1000-4000 rpm), and the preferred optimal film thickness is 1100-1200 nm (corresponding to a spin coating speed of 1000 rpm).

[0212] Test Example 3

[0213] The photoresponsivity of the flexible perovskite photodetector (spin coating speed 1000 rpm) obtained in Test Example 2 was tested using the aforementioned semiconductor performance testing system. The probes were connected to the external circuitry of the device matrix, and a bias voltage of 2V and a 1×10⁻⁶ ohmmeter were applied. 5 By controlling the switching behavior of the light source under Lux (white light) intensity, an on / off ratio of thousands of times was achieved. Figure 4 And millisecond-level fast response () Figure 5 ).

[0214] Test Example 4

[0215] according to Figure 6 The diagram illustrates how, by making specific movements above the device, such as waving a finger from left (right) to right (left), the resulting photoelectric response changes are recognized by a computer program, which then executes the corresponding instructions, enabling seamless human-computer interaction.

[0216] The implementation process of the aforementioned seamless human-computer interaction application is as follows:

[0217] (1) Connect the flexible perovskite photodetector prepared in Test Example 3 above to the computer through the designed external circuit and connect the software (the control of PPT is used as an example here).

[0218] (2) Place the detector in ambient light and make a mark above it as shown in the image. Figure 6 Gestures;

[0219] (3) The computer program detects and identifies the changes in photocurrent, and finally reflects them as the effect of PPT switching.

[0220] Test Example 5

[0221] To verify the performance stability of the perovskite photodetector prepared in Test Example 3, 1100 bending cycles were performed at a curvature radius of 7 mm. The relationship between the number of bending cycles and the normalized current was measured as follows: Figure 7 As shown. From Figure 7 It can be seen that after more than 1100 bending cycles, the photocurrent of the perovskite photodetector still retains more than 90% of its original value.

[0222] Furthermore, the normalized on / off ratio of the perovskite photodetector prepared in Test Example 3 was measured after being stored in a glove box at room temperature for 0 h (Fresh), 720 h, 900 h, 1080 h, and 1200 h, respectively. The results are as follows: Figure 8 As shown. From Figure 8 It can be seen that the performance of the perovskite photodetector did not degrade significantly, demonstrating excellent stability.

[0223] Similarly, the perovskite photodetectors in Examples 5-16 were tested using the same method as in Test Examples 1-5. The test results were similar to those in Test Examples 1-5. However, Example 6 performed better than Examples 5 and 7-8, Example 10 performed better than Examples 9 and 11-12, and Example 14 performed better than Examples 13 and 15-16.

[0224] The preferred embodiments of the present invention have been described in detail above; however, the present invention is not limited thereto. Within the scope of the inventive concept, various simple modifications can be made to the technical solutions of the present invention, including combinations of various technical features in any other suitable manner. These simple modifications and combinations should also be considered as the content disclosed in the present invention and are all within the protection scope of the present invention.

Claims

1. A liquid crystal-doped perovskite composite material, characterized in that, This liquid crystal-doped perovskite composite material contains perovskite material and liquid crystal material; The liquid crystal material contains diacrylate oligomers, which have the structure shown in formula (1). Equation (1) In formula (1), n1 and n2 are each an integer from 2 to 5, m1 and m2 are each an integer from 3 to 7, and R1, R2 and R3 are each an alkyl group of H or C1-C3.

2. The liquid crystal-doped perovskite composite material according to claim 1, wherein, n1 and n2 are each independent integers between 3 and 5; m1 and m2 are each independent integers from 3 to 6; R1, R2, and R3 are each independently H or methyl.

3. The liquid crystal-doped perovskite composite material according to claim 2, wherein, n1 and n2 are each 3 or 4 independently; m1 and m2 are each independently 3 or 4.

4. The liquid crystal-doped perovskite composite material according to any one of claims 1-3, wherein, The perovskite material is one or more of MAPbI3, FAPbI3, MAPbBr3, and FAPbBr3.

5. The liquid crystal-doped perovskite composite material according to any one of claims 1-3, wherein, The perovskite material is (FAPbI3). 1-x (MAPbBr3) x And / or (FAPbBr3) 1-x (MAPbI3) x x is a number between 0 and 1.

6. The liquid crystal-doped perovskite composite material according to any one of claims 1-3, wherein, The perovskite material is Cs. a (FA b MA 1-b ) 1-a Pb(I c Br 1-c 3, where a, b, and c are each an independent number between 0 and 1.

7. The liquid crystal-doped perovskite composite material according to any one of claims 1-3, wherein, The content of the diacrylate oligomer is 0.01-0.04 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

8. The liquid crystal-doped perovskite composite material according to claim 7, wherein, The content of the diacrylate oligomer is 0.015-0.03 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

9. The liquid crystal-doped perovskite composite material according to claim 8, wherein, The content of the diacrylate oligomer is 0.015-0.02 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

10. A method for preparing a liquid crystal-doped perovskite composite material, characterized in that, The method includes: drying a liquid crystal doped perovskite precursor solution containing perovskite material and diacrylate oligomers to obtain a perovskite layer containing liquid crystal doped perovskite composite material; The diacrylate oligomer has the structure shown in formula (1). Equation (1) In formula (1), n1 and n2 are each an integer from 2 to 5, m1 and m2 are each an integer from 3 to 7, and R1, R2 and R3 are each an alkyl group of H or C1-C3.

11. The preparation method according to claim 10, wherein, n1 and n2 are each independent integers between 3 and 5; m1 and m2 are each independent integers from 3 to 6; R1, R2, and R3 are each independently H or methyl.

12. The preparation method according to claim 10, wherein, n1 and n2 are each independently 3 or 4; m1 and m2 are each independently 3 or 4.

13. The preparation method according to any one of claims 10-12, wherein, The perovskite material is one or more of MAPbI3, FAPbI3, MAPbBr3, and FAPbBr3.

14. The preparation method according to any one of claims 10-12, wherein, The perovskite material is (FAPbI3). 1-x (MAPbBr3) x And / or (FAPbBr3) 1-x (MAPbI3) x x is a number between 0 and 1.

15. The preparation method according to any one of claims 10-12, wherein, The perovskite material is Cs. a (FA b MA 1-b ) 1-a Pb(I c Br 1-c 3, where a, b, and c are each an independent number between 0 and 1.

16. The preparation method according to any one of claims 10-12, wherein, The amount of the diacrylate oligomer is 0.01-0.04 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

17. The preparation method according to claim 16, wherein, The amount of the diacrylate oligomer is 0.015-0.03 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

18. The preparation method according to claim 17, wherein, The amount of the diacrylate oligomer is 0.015-0.02 wt% relative to the total weight of the diacrylate oligomer and the perovskite material.

19. The preparation method according to any one of claims 10-12, wherein, The solvent of the liquid crystal doped perovskite precursor solution is one or more of DMF, DMSO, DMAc, and NMP.

20. The preparation method according to claim 19, wherein, The solvent for the liquid crystal doped perovskite precursor solution is a mixture of DMF and DMSO.

21. The preparation method according to claim 20, wherein, The volume ratio of DMF to DMSO is 1:0.05-0.

5.

22. The preparation method according to any one of claims 10-12, wherein, The drying temperature is 90-110℃.

23. The preparation method according to claim 22, wherein, The drying temperature is 100-105℃.

24. A perovskite photodetector, characterized in that, The perovskite photodetector includes a perovskite layer, which comprises the liquid crystal-doped perovskite composite material according to any one of claims 1-9, or the liquid crystal-doped perovskite composite material prepared by the preparation method according to any one of claims 10-23.

25. The perovskite photodetector according to claim 24, wherein, The thickness of the perovskite layer is 350-1800 nm.

26. The perovskite photodetector according to claim 25, wherein, The thickness of the perovskite layer is 1100-1200 nm.

27. The perovskite photodetector according to claim 24, wherein, The perovskite photodetector also includes a substrate layer and an electrode layer.

28. The perovskite photodetector according to claim 27, wherein, The base layer is a flexible base.

29. The perovskite photodetector according to claim 28, wherein, The base layer is a polyvinyl alcohol film, a polyimide film, or a polyester film.

30. A method for fabricating a perovskite photodetector, characterized in that, The method includes preparing a perovskite layer using the preparation method described in any one of claims 10-23.

31. The method for fabricating a perovskite photodetector according to claim 30, wherein, The thickness of the perovskite layer is 350-1800 nm.

32. The method for fabricating a perovskite photodetector according to claim 31, wherein, The thickness of the perovskite layer is 1100-1200 nm.

33. The method for fabricating a perovskite photodetector according to claim 30, wherein, The perovskite layer is formed on the substrate layer.

34. The method for fabricating a perovskite photodetector according to claim 33, wherein, The base layer is a flexible base.

35. The method for fabricating a perovskite photodetector according to claim 34, wherein, The base layer is a polyvinyl alcohol film, a polyimide film, or a polyester film.

36. The application of the liquid crystal doped perovskite composite material according to any one of claims 1-9, the liquid crystal doped perovskite composite material prepared by the preparation method according to any one of claims 10-23, the perovskite photodetector according to any one of claims 24-29, or the perovskite photodetector prepared by the preparation method according to any one of claims 30-35 in human-machine non-sensory interaction, photosensitizers, or indoor photoelectric sensors.

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