A di-arylethene-containing photoelectric dual-responsive polymer thin film resistive random access memory device and preparation and application thereof

Abstract

The application belongs to the field of organic / polymer neuromorphic devices, and specifically provides a resistive random access memory device containing a diarylethene photoelectric dual-response polymer film as well as a preparation method and application thereof. The device structure is a classic sandwich structure, the bottom electrode is an ITO-coated glass substrate, and the active layer is a thin film of a novel photoelectric dual-response polymer material poly(DAE-TPB). By applying different voltages to the device, the device shows repeated erasable storage performance, and the current-voltage characteristic curve shows very small opening and closing voltages, and the absolute values of the opening and closing voltages are roughly the same, which shows that only the voltage direction needs to be adjusted and the non-volatile storage rewritable switching property has small power consumption. Based on the photoresistance characteristic, the device can be applied to light-controlled logic operation. The polymer memristor can realize the integration of storage and calculation, can be used for information storage, and has excellent application prospects in the field of artificial intelligence.

Description

Technical Field

[0001] This invention belongs to the field of organic / polymer neuromorphic information storage technology, specifically providing a method for preparing and applying a lightweight polymer nano-neuromorphic device with photoelectric dual response. Specifically, it relates to an organic nanoscale neuromorphic device with a DA-type two-dimensional polymer as the active layer, its preparation method, testing method, and application in the field of low-power optoelectronic information storage. Background Technology

[0002] Optoelectronic dual-response resistive switching memory has become an important part of the research on information storage devices and logic operation systems. It is of great significance for realizing optically assisted multi-level storage, optical encryption and computing, and constructing neuromorphic systems and artificial vision systems. The development of optoelectronic dual-response resistive switching memory requires the following three basic conditions: (1) integrating optical and electrical response functions on a single device; (2) the optical response signal can be converted into an electrical signal; and (3) the electrical signal can be reversibly read / written through optical means. Based on these conditions, various material systems, such as organic materials, novel two-dimensional materials, metal oxides and perovskite materials, have been explored to integrate photoresponse functions. Among them, organic materials are the most promising to be developed into optoelectronic dual-response resistive switching memory materials because they can introduce photoresponse units at the molecular level through flexible molecular design strategies and rich chemical synthesis methods. On this basis, in order to ensure that light stimulation can effectively regulate the electrical properties of the material, the photoresponse unit needs to have two basic characteristics: (1) having at least two isomers with different electronic properties; and (2) being easy to isomerize after being stimulated by light of a specific wavelength. Furthermore, photoresponse units should also possess good thermal stability and fatigue resistance to ensure stable device performance. For a long time, various photoresponse units, including azobenzene, spiropyran, fentanyl anhydride, and diarylethene (DEA), have been extensively explored and studied. Among them, diarylethene has become a research focus due to its excellent thermal stability, fatigue resistance, and high open / closed ring isomerization efficiency. Currently, various diarylethene-based photoresponse materials have been designed, synthesized, and applied in many fields, including optoelectronic information storage, optoelectronic switching devices, logic operations, and optical anti-counterfeiting. However, most are small molecules or linear polymers, and the solid films prepared have complex internal structures, often tending towards dense packing, which leads to non-uniform photoisomerization behavior. In contrast, inspired by the design and synthesis strategies of covalent organic framework materials, two-dimensional conjugated porous polymers synthesized using diarylethene units as a backbone have more advantages. First, the conjugated backbone can enhance the chemical and thermal stability of the material. Secondly, constrained by the inherent bonding mode, the diarylethene units can be uniformly distributed within the conjugated porous polymer structure. This not only endows the material with faster electronic dynamics but also leads to more uniform photoisomerization behavior. These advantages make diarylethene-based conjugated porous polymers excellent photoelectric dual-response resistive switching memory materials, which can be used to fabricate high-performance photoresistive switching memories. Summary of the Invention

[0003] The purpose of this invention is to propose a non-volatile erasable and rewritable memory with a conjugated porous polymer film as the active layer, that is, a conjugated polymer memory device with non-volatile and rewritable storage properties.

[0004] A second objective of this invention is to provide a synthetic route for a novel conjugated porous polymer for use in the active layer of storage devices.

[0005] The third objective of this invention is to provide a method for preparing a non-volatile erasable and rewritable memory using a novel conjugated porous polymer thin film material as the active layer.

[0006] The fourth objective of this invention is to provide an application of a conjugated polymer memory device with non-volatile and rewritable storage properties in a low-power optoelectronic information storage device.

[0007] The technical solution of the present invention:

[0008] A non-volatile erasable and rewritable memory (i.e., a resistive switching memory device containing a diarylethene-based photoelectric dual-response polymer thin film) with a novel conjugated porous polymer thin film material as the active layer, has the following structure from bottom to top:

[0009] 1. Glass substrate;

[0010] 2. Indium tin oxide (ITO) electrode;

[0011] 3. Poly(DAE-TPB) conjugated porous polymer film active layer;

[0012] 4. Aluminum electrode.

[0013] Furthermore, the thickness of the active layer of the polymer polyDAE-TPB film is 100nm-200nm.

[0014] Furthermore, the aluminum electrode has a thickness of 100-150 nm.

[0015] This invention discloses a conjugated polymer memory device with non-volatile and rewritable storage properties possessing photoelectric dual response. It features non-volatile and rewritable storage functionality: the device exhibits distinctly different resistance states under different voltages, which can be defined as "0" and "1" in binary code to store data, and the data is retained even after power is off. Furthermore, the device's resistance gradually decreases under ultraviolet light irradiation and gradually increases under visible light irradiation, eventually returning to essentially its initial state. Based on this optically modulated resistance characteristic, the device can be applied to light-controlled logic operations.

[0016] The present invention also provides a method for preparing the polymer storage device with non-volatile and rewritable storage properties, comprising the following steps:

[0017] 1) Clean the ITO-coated glass substrate and dry it;

[0018] 2) Deposit a poly(DAE-TPB) film onto a pre-cleaned ITO plate;

[0019] 3) Vacuum dry the obtained device overnight to remove excess solution;

[0020] 4) Finally, the Al top electrode is deposited on the active layer to obtain the device Al / poly(DAE-TPB) / ITO.

[0021] Further preferred, the specific steps of this preparation method include:

[0022] 1) Wash the ITO-coated glass substrate (preferably 1.5cm × 1.5cm) with dish soap and deionized water, then wash it in ethanol, acetone and isopropanol respectively (preferably for 15 minutes) and dry it.

[0023] 2) Cover the ITO glass with a polymer layer of 100nm-200nm thickness and vacuum dry overnight to remove excess solution.

[0024] 3) The Al top electrode (preferably 100-150 nm thick, with an area of ​​about 0.4 × 0.4 mm2) is deposited on the active layer through a mask using a magnetron sputtering method, and finally the device Au / poly(DAE-TPB) / ITO is obtained.

[0025] The polymer poly(DAE-TPB) structure in the active layer film provided by this invention is shown in the following formula:

[0026]

[0027] The preparation method of the polymer poly(DAE-TPB) active layer of the present invention is as follows:

[0028] Synthesis of M1: Under an Ar atmosphere, anhydrous AlCl3 and anhydrous CH2Cl2 were added to a reaction flask and stirred slowly at 0°C. Then, 2-chloro-5-methylthiophene and glutaryl chloride were slowly added dropwise, and the resulting mixture was reacted at room temperature for 4 h. The mixture was then poured into ice water and hydrochloric acid was added until no gas was produced. The mixture was extracted three times with CH2Cl2, the organic phases were combined and washed with brine, then dried over anhydrous Na2SO4 and filtered. After rotary evaporation to concentrate the filtrate, it was purified by column chromatography (silica gel:petroleum ether / CH2Cl2 = 3:1) to finally obtain a pale yellow solid.

[0029] Synthesis of M2: Under an Ar atmosphere, Zn and anhydrous THF were added to a reaction flask and stirred slowly at -5°C. TiCl4 was then added dropwise to the flask, and the mixture was refluxed at 65°C for 3 h. After cooling to 0°C, 30 mL of anhydrous THF solution containing M1 was slowly added, and the mixture was reheated to 65°C and refluxed for 12 h. A saturated K2CO3 solution was then added, followed by filtration and collection of the filtrate. The filtrate was extracted three times with CH2Cl2, the organic phases were combined and washed with brine, then dried over anhydrous Na2SO4 and filtered. After rotary evaporation to concentrate the filtrate, it was purified by column chromatography to obtain colorless crystals.

[0030] Synthesis of 1,2-bis[5-(4-(formylphenyl)-2-methylthiophene-3-yl]cyclopent-1-ene (o-DAE): Under an Ar atmosphere, M2 and anhydrous THF were added to a reaction flask, stirred, and cooled to -78°C. Then, n-BuLi was slowly added dropwise, during which the mixture turned deep pink. After the addition was complete, the reaction was stirred for 1 h. Subsequently, tributyl borate was added, and the reaction was stirred at room temperature for 2 h. The resulting orange mixture was used directly as a starting material without purification. Simultaneously, under an Ar atmosphere, another reaction was carried out... Pd(PPh3)4 and THF were added to a flask, and the mixture was stirred and refluxed at 70°C for 30 min. Then, 2.5 Mk2CO3 aqueous solution, ethylene glycol, 4-bromobenzaldehyde, and the above orange mixture were added to the reaction flask, and the mixture was refluxed at 70°C for 12 h. After cooling, deionized water was added, and the mixture was extracted three times with CH2Cl2. The organic phases were combined, washed with brine, dried over anhydrous Na2SO4, and filtered. The filtrate was concentrated by rotary evaporation and purified by column chromatography (silica gel; CH2Cl2) to obtain a pale yellow solid.

[0031] o-DAE exhibits excellent photoisomerization properties under ultraviolet light (λ = 365 nm, 40 mW / cm²). 2 Under irradiation, it can transform from an open-loop state to a closed-loop state (o-DAE→c-DAE), while under visible light (λ>550nm, 40mW / cm²), it can transform from an open-loop state to a closed-loop state. 2 Under irradiation, the closed-loop state can be transformed back into an open-loop state.

[0032] The structural formula of M1,M2,1,2-bis[5-(4-(formylphenyl)-2-methylthiophen-3-yl]cyclopent-1-ene (o-DAE) is as follows:

[0033]

[0034] The specific reaction route is as follows:

[0035]

[0036] The present invention also provides an application of the organic nano-neuromorphic device with conjugated polymer as active layer in the field of low-power information storage.

[0037] Furthermore, the device exhibits distinctly different resistance states under different voltages. These states can be defined as "on" and "off" and can be used as "0" and "1" in binary to store data, and the data can still be preserved after power is turned off.

[0038] Furthermore, this application is the use of a conjugated porous polymer memory with an ultra-low threshold voltage in low-power optoelectronic nanoscale neuromorphic devices.

[0039] This invention proposes using conjugated porous polymer materials as the active layer of neuromorphic devices, and designs and synthesizes a conjugated porous polymer. This invention selects 1,2-bis[5-(4-(formylphenyl)-2-methylthiophene-3-yl]cyclopent-1-ene (DAE) and 1,3,5-tris(4-aminophenyl)benzene (TAB) as monomers, and synthesizes a photoresponsive conjugated porous polymer film poly(DAE-TAB) via a Schiff base reaction.

[0040] This invention provides a nano-neuromorphic device with an organic two-dimensional conjugated polymer as the active layer. The device structure is a classic sandwich structure, with the bottom electrode being a glass substrate coated with ITO, and the active layer being a thin film of a novel photoelectric dual-response polymer material, poly(DAE-TPB). By applying different voltages to the device, it exhibits repeatedly erasable and rewritable storage performance. Its current-voltage characteristic curve shows extremely small turn-on and turn-off voltages, and the absolute values ​​of the turn-on and turn-off voltages are approximately the same, demonstrating non-volatile, rewritable switching properties with only voltage direction adjustment and low power consumption. Furthermore, the device's resistance gradually decreases under ultraviolet light irradiation and gradually increases under visible light irradiation, eventually returning to essentially its initial state. Based on this light-tunable resistance characteristic, the device can be applied to light-controlled logic operations. This polymer memristor enables in-memory computing and can be used for information storage, showing excellent application prospects in the field of artificial intelligence.

[0041] This invention relates to an Al / poly(DAE-TAB) / ITO-based neuromorphic device with very low "on" and "off" voltages and excellent stability, showing promising application prospects in lightweight intelligent neuromorphic memory devices. Because this invention utilizes a pure polymer as the active layer, it can be fabricated into nanoscale devices using electron beam lithography and lift-off techniques. In contrast, products covalently grafted with two-dimensional materials, such as black phosphorus (BP) and graphene, may result in uneven lattice films when using the same techniques. The use of a pure polymer precisely solves this problem. Attached Figure Description

[0042] Figure 1 For ultraviolet light (λ=365nm, 40mW / cm) 2 ) and visible light (λ>550nm, 40mW / cm) 2 Schematic diagram of the interconversion between Al / o-poly(DAE-TAB) / ITO and Al / c-poly(DAE-TAB) / ITO under alternating irradiation.

[0043] Figure 2 The IV characteristic curves of Al / o-poy(DAE-TAB) / ITO and Al / o-poy(DAE-TAB) / ITO devices are shown.

[0044] Figure 3 This study investigates the effects of time variations in the ON and OFF states of the device under a constant voltage of 0.1V and the influence of a 0.1V readout pulse (pulse width = 1μs; pulse period = 2μs) on the ON and OFF current of the device.

[0045] Figure 4 The stability of the current of Al / o-poy(DAE-TAB) / ITO and Al / o-poy(DAE-TAB) / ITO devices in ON and OFF states under a pulse voltage of 0.1V is determined.

[0046] Figure 5 The graph shows the relationship between the number of readouts and the current for Al / o-poy(DAE-TAB) / ITO and Al / o-poy(DAE-TAB) / ITO devices under a 0.1V readout pulse. Detailed Implementation

[0047] The embodiments of the present invention will now be described in detail with reference to the accompanying drawings, so that the features and advantages of the present invention will become more apparent and understandable.

[0048] A method for fabricating a conjugated polymer memory device with photoelectric dual response, non-volatile, and rewritable storage properties:

[0049] 1) Wash the ITO-coated glass substrate (1.5cm × 1.5cm) with dish soap and deionized water, then wash it in ethanol, acetone and isopropanol for 15 minutes each and dry it.

[0050] 2) A polymer layer with a thickness of 100 nm prepared in step 1 was deposited on the ITO glass using a deposition method, and then vacuum dried overnight to remove excess solution.

[0051] 3) An Al top electrode (thickness = 100 nm) with an area of ​​approximately 0.4 × 0.4 mm² was fabricated using magnetron sputtering.

[0052] 4) The active layer is deposited through a mask to finally obtain the device Al / poly(DAE-TAB) / ITO.

[0053] The structure of the polymer poly(DAE-TPB) in the above active layer film is shown in the following formula:

[0054]

[0055] The preparation method of the above-mentioned polymer poly(DAE-TPB) active layer is as follows:

[0056] Synthesis of M1: Under an Ar atmosphere, anhydrous AlCl3 (16 g, 120.00 mmol) and anhydrous CH2Cl2 (100 mL) were added to a reaction flask and stirred slowly at 0 °C. Then, 2-chloro-5-methylthiophene (8.10 mL, 75.56 mmol) and glutaryl chloride (6 g, 35.50 mmol) were slowly added dropwise, and the resulting mixture was reacted at room temperature for 4 h. The mixture was then poured into ice water and hydrochloric acid was added until no gas was produced. The mixture was extracted three times with CH2Cl2, the organic phases were combined and washed with brine, then dried over anhydrous Na2SO4 and filtered. After rotary evaporation to concentrate the filtrate, it was purified by column chromatography (silica gel: petroleum ether / CH2Cl2 = 3:1) to give a pale yellow solid (7.15 g, 56%). 1 HNMR (CDCl3, 400MHz): δ / ppm=7.19 (s, 2H); 2.88-2.85 (m, 4H); 2.66 (s, 6H); 2.09-2.03 (m, 2H).

[0057] Synthesis of M2: Under an Ar atmosphere, Zn (20 g) and anhydrous THF (80 mL) were added to a reaction flask and stirred slowly at -5 °C. TiCl4 (19.43 mL, 128.71 mmol) was then added dropwise to the flask, and the mixture was refluxed at 65 °C for 3 h. After cooling to 0 °C, 30 mL of anhydrous THF solution containing M1 (7 g, 19.37 mmol) was slowly added, and the mixture was reheated to 65 °C and refluxed for 12 h. A saturated K2CO3 solution was then added, followed by filtration and collection of the filtrate. The resulting filtrate was extracted three times with CH2Cl2, the organic phases were combined and washed with brine, then dried over anhydrous Na2SO4 and filtered. After rotary evaporation to concentrate the filtrate, it was purified by column chromatography to finally obtain colorless crystals (5.71 g, 90%). 1 HNMR (CDCl3, 400MHz): δ / ppm=6.58 (s, 2H); 2.73-2.70 (m, 4H); 2.05-1.99 (m, 2H); 1.88 (s, 6H).

[0058] Synthesis of 1,2-bis[5-(4-(formylphenyl)-2-methylthiophene-3-yl]cyclopent-1-ene (o-DAE): Under an Ar atmosphere, M2 (5.50 g, 16.76 mmol) and anhydrous THF (30 mL) were added to a reaction flask, stirred, and cooled to -78 °C. Then, n-BuLi (16.72 mL, 2.5 M) was slowly added dropwise, during which the mixture turned a deep pink color. After the addition was complete, the reaction was stirred for 1 h. Subsequently, tributyl borate (13.56 mL, 50.17 mmol) was added, and the reaction was stirred at room temperature for 2 h. The resulting orange mixture was used directly as a starting material without purification. Simultaneously, under an Ar atmosphere, in another reaction flask… Pd(PPh3)4 (500 mg, 0.43 mmol) and THF (25 mL) were added, and the mixture was stirred and refluxed at 70 °C for 30 min. Then, 2.5 Mk2CO3 (50 mL) aqueous solution, ethylene glycol (10 drops), 4-bromobenzaldehyde (7.4 g, 40.00 mmol), and the above orange mixture were added to the reaction flask, and the mixture was refluxed at 70 °C for 12 h. After cooling, deionized water was added, and the mixture was extracted three times with CH2Cl2. The organic phases were combined, washed with brine, dried over anhydrous Na2SO4, and filtered. The filtrate was concentrated by rotary evaporation and purified by column chromatography (silica gel; CH2Cl2) to give a pale yellow solid (5.22 g, 66%). 1 HNMR (CDCl3, 400MHz): δ / ppm=9.96 (s, 2H); 7.83 (d, 4H); 7.63 (d, 4H); 7.19 (s, 2H); 2.86 (t, 4H); 2.15-2.08 (m, 2H); 2.04 (s, 6H).

[0059] o-DAE exhibits excellent photoisomerization properties under ultraviolet light (λ = 365 nm, 40 mW / cm²). 2 Under irradiation, it can transform from an open-loop state to a closed-loop state (o-DAE→c-DAE), while under visible light (λ>550nm, 40mW / cm²), it can transform from an open-loop state to a closed-loop state. 2 Under irradiation, the closed-loop state can be transformed back into an open-loop state.

[0060] The structural formula of M1,M2,1,2-bis[5-(4-(formylphenyl)-2-methylthiophen-3-yl]cyclopent-1-ene (o-DAE) is as follows:

[0061]

[0062] The specific reaction route is as follows:

[0063]

[0064] Example 1

[0065] like Figure 1 Due to the photo-isomerization properties of the active layer o-poly(DAE-TAB) thin film, the device can be interconverted between Al / o-poly(DAE-TAB) / ITO and Al / c-poly(DAE-TAB) / ITO, thereby modulating the device performance.

[0066] Example 2

[0067] like Figure 2 The current-voltage characteristic graph of the Al / poly(DAE-TAB) / ITO device shows that the Al / o-poly(DAE-TAB) / ITO device exhibits non-volatile, erasable, and rewritable storage performance. The test procedures are as follows:

[0068] The device initially operates at a high resistance. During the first scan, a positive voltage from 0V to 3V is applied. As the current increases, it also increases slowly. Once the voltage reaches the "turn-on" threshold voltage (Von = 2.25V), the current will decrease from 1 × 10⁻⁶. -6 A mutation to 5×10 -5 A. This indicates that the device has successfully switched from a high-resistance state (OFF) to a low-resistance state (ON), and regardless of subsequent applications of larger voltages or a new scan from 0V to 3V (the second scan, applying a voltage from 0V to 3V), the device remains in the lower resistance state. This demonstrates that the device exhibits non-volatile memory behavior, and these two scans represent the "write" and "read" functions of the memory cell. The voltage applied in the third scan is set from 0V to -3V. During this process, the device initially remains in the ON state until the voltage reaches the off threshold voltage of -2.60V (Voff), at which point the current changes abruptly, returning the device from the ON state to the OFF state. Even after the scan voltage continuously increases to the set -1V or even after a new negative 0V to -1V voltage scan is applied, the device remains in the OFF state. The third and fourth scans represent the "erase" and "read" processes of the memory performance. These complete scans from 1 to 4 fully demonstrate that the device possesses non-volatile erasable memory performance. After subjecting the Al / o-poly(DAE-TAB) / ITO device to 3 minutes of ultraviolet light to transform it into Al / c-poly(DAE-TAB) / ITO, its performance changed significantly. The Al / c-poly(DAE-TAB) / ITO device still exhibited non-volatile, erasable, and rewritable storage performance, but the high-resistivity state (c-HRS) resistance was significantly reduced, and the turn-on and turn-off voltages were approximately 1.05V and -2.57V, respectively, with a current on / off ratio of approximately 57.

[0069] Example 3

[0070] like Figure 3 The stability of the device during long-term operation was tested. A continuous voltage of 0.1V was applied to the device, and the current values ​​in the OFF and ON states remained stable for 3 x 10⁴ seconds, forming almost two straight lines on the time stability curve, demonstrating good time retention.

[0071] Example 4

[0072] like Figure 4 The device's sensitivity to on / off states was tested by applying pulse voltages. The pulse size was set to 0.1V, the duration to 1μs, and the pulse interval to 2μs. It can be seen that the device's switching current was not affected after 10⁶ cycles of pulse voltage application, indicating that the device is not sensitive to the read voltage.

[0073] Example 5

[0074] like Figure 5 The device's cycle durability was tested, and the results showed that even after more than 500 switching cycles, the device's o-HRS and o-LRS currents remained unchanged, demonstrating that the device has good performance stability and can guarantee a low misread rate during actual operation.

[0075] The preparation steps, effect examples, and accompanying data described above are preferred embodiments of the present invention. Other embodiments within the scope of protection can also achieve the above-mentioned beneficial effects, and will not be repeated here. It should be noted that those skilled in the art can make several improvements and modifications without departing from the concept of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A resistive switching memory device comprising a diarylethylene-containing photoelectric dual-response polymer thin film, characterized in that: Its structure, from bottom to top, is as follows: (1) Glass substrate; (2) Indium tin oxide electrode (ITO); (3) Polymer (DAE-TPB) film active layer; (4) Aluminum electrode; The structure of poly(DAE-TPB) in the active layer of the polymer film is shown in the following formula: 。 2. The resistive switching memory device of claim 1, comprising a diarylethylene-containing photoelectric dual-response polymer thin film, characterized in that, The thickness of the active layer of the polymer (DAE-TPB) thin film is 100nm-200nm.

3. The resistive switching memory device of claim 1, comprising a diarylethylene-containing photoelectric dual-response polymer thin film, characterized in that, It features non-volatile and rewritable memory: the device exhibits distinctly different resistance states under different voltages, which can be defined as "0" and "1" in binary to store data, and the data can still be retained after power is turned off; in addition, the resistance of the device gradually decreases under ultraviolet light irradiation, while it gradually increases under visible light irradiation, eventually returning to its initial state; based on this optically adjustable resistance characteristic, the device can be applied to optically controlled logic operations.

4. A resistive switching memory device with a photoelectric dual-response polymer thin film containing diarylethene as described in claim 1, characterized in that, The synthetic route for the monomer O-DAE required to prepare the polymer film poly(DAE-TPB) is as follows: 。 5. A resistive switching memory device with a photoelectric dual-response polymer thin film containing diarylethene as described in claim 4, characterized in that, The monomer O-DAE contained in the polymer film poly(DAE-TPB) is prepared by the following steps: 1) Synthesis of M1: Anhydrous AlCl3 and anhydrous CH2Cl2 were added to a reaction flask under an Ar atmosphere and stirred slowly at 0 °C; then 2-chloro-5-methylthiophene and glutaryl chloride were slowly added dropwise, and the resulting mixture reacted at room temperature; then the mixture was poured into ice water and hydrochloric acid was added until no gas was produced; the mixture was extracted, washed, dried, filtered, concentrated, and purified to obtain a pale yellow solid; 2) Synthesis of M2: Under an Ar atmosphere, Zn and anhydrous THF were added to the reaction flask and stirred slowly at −5 °C; then TiCl4 was added dropwise to the reaction flask, and after reflux, the mixture was cooled to 0 °C, and anhydrous THF solution containing M1 was added. After reflux, the mixture was refluxed and then post-treated to obtain colorless crystals. 3) Synthesis of 1,2-bis[5-(4-(formylphenyl))-2-methylthiophene-3-yl]cyclopent-1-ene (o-DAE): Under an Ar atmosphere, M2 and anhydrous THF were added to a reaction flask, stirred, and cooled to -78 °C. Then, n-BuLi was added dropwise, during which the mixture turned deep pink. The reaction was stirred, and tributyl borate was added, and the reaction was stirred at room temperature. The resulting orange mixture was used directly as a raw material without purification. At the same time, under an Ar atmosphere, Pd(PPh3)4 and THF were added to another reaction flask, stirred and refluxed. Then, K2CO3 aqueous solution, ethylene glycol, 4-bromobenzaldehyde and the above orange mixture were added to the reaction flask and refluxed. After post-treatment, a light yellow solid was finally obtained.

6. A method for preparing a resistive switching memory device of a photoelectric dual-response polymer thin film containing diarylethene as described in claim 1, characterized in that, Includes the following steps: 1) Clean the ITO-coated glass substrate and dry it; 2) Deposit poly(DAE-TPB) onto a pre-cleaned ITO plate; 3) Vacuum dry the obtained device overnight to remove excess solution; 4) Finally, the Al top electrode is deposited on the active layer to obtain the device Al / poly(DAE-TPB) / ITO.

7. A method for preparing a resistive switching memory device of a photoelectric dual-response polymer thin film containing diarylethene as described in claim 1, specifically comprising the following steps: 1) Clean the ITO-coated glass substrate with dish soap and deionized water, then wash and dry it in ethanol, acetone and isopropanol respectively. 2) Deposit a poly(DAE-TPB) thin film on a pre-cleaned ITO plate with a thickness of 100nm-200nm; 3) The obtained device was then thoroughly vacuum dried overnight to remove excess solution; 4) Finally, the Al top electrode is deposited onto the active layer using a magnetron sputtering method through a mask; 5) The final device Al / poly(DAE-TPB) / ITO is obtained.

8. The application of a resistive switching memory device containing a diarylethylene photoelectric dual-response polymer thin film as described in any one of claims 1-5 in a low-power information storage device.

9. The application of the resistive switching memory device containing a diarylethene-containing photoelectric dual-response polymer thin film as described in claim 8 in a low-power information storage device, characterized in that, The device exhibits distinctly different resistance states under different voltages. These states can be defined as "on" and "off" and can be used as "0" and "1" in binary to store data. The data can also be preserved after power is turned off.

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