Method for manufacturing semiconductor device, display method, substrate processing device, and recording medium

CN117043916BActive Publication Date: 2026-10-09KOKUSAI DENKI KK
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Patent Information

Application Number
CN202180094756.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-03-22
Publication Date
2026-10-09
Estimated Expiration
2041-03-22

AI Technical Summary

Technical Problem

[0006]然而,在制程编辑画面中用户设定气体流量时,有可能设定错误的气体管线的气体流量

Benefits of technology

[0017] According to this disclosure, it is possible to determine which gas pipeline the user wants to set the gas flow rate to be.

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Abstract

It is possible to confirm which gas line's flow rate is intended to be set by the user. A manufacturing method of a semiconductor device is provided, which has a step of displaying, on a process editing screen that edits a process including a plurality of steps, a parameter setting area that sets a control parameter of a gas flow rate of at least a flow rate controller and a gas pattern screen that sets an open / close state of a valve, a step of editing the process on the process editing screen, and a step of processing a substrate by executing the produced process, in the step of producing the process, when the gas flow rate of the flow rate controller is set in the parameter setting area, the flow rate controller on the gas pattern screen corresponding to the flow rate controller for which the gas flow rate is set is explicitly shown.
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Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a semiconductor device, a display method, a substrate processing apparatus, and a recording medium. Background Technology

[0002] Typically, a substrate processing apparatus includes multiple gas lines for supplying various gases, such as raw material gases, inert gases, and reactive gases, into the processing chamber. In the substrate processing apparatus, valves on each gas line are opened and closed to supply various gases from the gas supply system to the substrate (hereinafter also referred to as a wafer) in the processing chamber, thereby performing a predetermined process.

[0003] Patent document 1 discloses a substrate processing apparatus that displays an area for setting control parameters, an area for setting valve opening and closing states, and an area for displaying various parameter information in a process editing screen to manufacture the process.

[0004] Patent document 2 discloses a processing device that displays the following in a process editing screen: a process editing area for editing process documents; a sub-area for displaying merged documents associated with the process; and a command selection area for selecting process editing commands or performing actual editing actions to create the process.

[0005] Patent document 3 discloses a substrate processing device that can switch from a process editing screen to a gas mode screen to set valve opening and closing.

[0006] However, when setting the gas flow rate in the process editing screen, the user may set the wrong gas flow rate for the gas pipeline.

[0007] Existing technical documents

[0008] Patent documents

[0009] Patent Document 1: Japanese Patent Application Publication No. 2017-002353

[0010] Patent Document 2: International Publication No. 2019 / 186649

[0011] Patent Document 3: Japanese Patent Application Publication No. 2006-093494 Summary of the Invention

[0012] The problem that the invention aims to solve

[0013] According to this disclosure, a technique is provided that can identify which gas pipeline the user wants to set the gas flow rate to be.

[0014] Methods for solving problems

[0015] According to one aspect of this disclosure, a technique is provided comprising the following steps: displaying a parameter setting area for setting control parameters of at least a gas flow rate of a flow controller and a gas mode screen for setting the opening and closing state of a valve on a process editing screen for manufacturing a process comprising multiple steps; editing the process on the process editing screen; and processing a substrate by executing the edited process, wherein, in the process of editing the process, when setting the gas flow rate of the flow controller in the parameter setting area, the flow controller on the gas mode screen corresponding to the flow controller for which the gas flow rate is set is explicitly displayed.

[0016] Invention Effects

[0017] According to this disclosure, it is possible to determine which gas pipeline the user wants to set the gas flow rate to be. Attached Figure Description

[0018] Figure 1 This is a longitudinal cross-sectional view of the processing furnace 202 of the substrate processing apparatus 10 preferably used in one embodiment of the present disclosure.

[0019] Figure 2 This is a schematic structural diagram of the controller 240 of the substrate processing apparatus 10 preferably used in one embodiment of the present disclosure, and is a block diagram showing the control system of the controller.

[0020] Figure 3 This is an example of the process editing screen 20 displayed during process editing.

[0021] Figure 4 yes Figure 3 The enlarged view of the step setting area 30 of the process editing screen 20 shown.

[0022] Figure 5 yes Figure 3 The enlarged view of the step content setting area 40 of the process editing screen 20 shown.

[0023] Figure 6 This is a diagram showing an example of a warning display when the valve 243a opening timing on the gas mode screen 42 meets the valve interlocking conditions.

[0024] Figure 7 This is a diagram showing an example of the valve interlock conditions when a valve with valve interlock conditions set on the gas mode screen 42 is pressed and held.

[0025] Figure 8 This is a diagram showing an example of a display where, when any valve is selected on the gas mode screen 42, the gas piping connected to the selected valve is clearly shown.

[0026] Figure 9This is a flowchart illustrating the process editing start flow in a substrate processing apparatus 10 according to an embodiment of the present disclosure.

[0027] Figure 10 This is a flowchart illustrating the process of setting the gas in a substrate processing apparatus 10 according to an embodiment of the present disclosure.

[0028] Figure 11 This is a flowchart illustrating the process of changing settings in the parameter setting area 41 or gas mode screen 42 of the process editing screen 20 in a substrate processing apparatus 10 according to an embodiment of this disclosure.

[0029] Figure 12 This is a flowchart illustrating the process of displaying MFC correspondingly in the parameter setting area 41 and the gas mode screen 42 on the process editing screen 20 of the substrate processing apparatus 10 according to an embodiment of this disclosure.

[0030] Figure 13 This is a flowchart illustrating the process of selecting an arbitrary valve on the gas mode screen 42 of the process editing screen 20 in the substrate processing apparatus 10 of one embodiment of the present disclosure.

[0031] Figure 14 This is a flowchart illustrating the process of setting the step area 30 of the display process editing screen 20 in a substrate processing apparatus 10 according to an embodiment of the present disclosure. Detailed Implementation

[0032] Hereinafter, an embodiment of the present disclosure will be described with reference to the accompanying drawings. First, in Figure 1 , Figure 2 The substrate processing apparatus 10 implementing this disclosure will be described below. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not correspond to reality. Additionally, the dimensional relationships and ratios of the elements may not be consistent between different drawings.

[0033] The substrate processing apparatus 10 includes a processing furnace 202 for processing the wafer 200, which serves as a substrate, that has been transferred into the housing. For example... Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating mechanism (temperature adjustment unit). The heater 207 is cylindrical and is vertically mounted by being supported by a retaining plate. The heater 207 also functions as an activation mechanism (activation unit) that uses heat to activate (excite) the gas.

[0034] Inside the heater 207, a reaction tube 203 is arranged concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape that is closed at the top and open at the bottom. A processing chamber 201 is formed in the hollow part of the reaction tube 203. The processing chamber 201 is configured to accommodate a wafer 200. The wafer 200 is processed in this processing chamber 201.

[0035] Multiple nozzles 249 are installed inside the processing chamber 201, extending through the lower side wall of the reaction tube 203. Each nozzle 249 is connected to multiple gas supply pipes 232.

[0036] On the gas supply pipe 232, a mass flow controller (MFC) 241, which serves as a flow controller (flow control unit), and a valve 243, which serves as an on / off valve, are respectively installed sequentially from the upstream side.

[0037] Various gases, such as raw material gas, inert gas, and reactive gas, are supplied to the processing chamber 201 through the gas supply pipe 232 via MFC 241, valve 243, and nozzle 249.

[0038] Additionally, an exhaust pipe 231 for venting the atmosphere of the processing chamber 201 is connected to the lower side wall of the reaction tube 203. The exhaust pipe 231 is connected to an exhaust device 246, which is composed of a vacuum pump, via a pressure sensor 245 (a pressure detector, or pressure detection unit) that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 (a pressure regulator, or pressure adjustment unit). The APC valve 244 is configured to allow for vacuum venting and cessation of vacuum venting within the processing chamber 201 by opening and closing the valve while the exhaust device 246 is operating, and to adjust the pressure in the processing chamber 201 by adjusting the valve opening based on the pressure information detected by the pressure sensor 245 while the exhaust device 246 is operating. The exhaust system mainly consists of the exhaust pipe 231, the pressure sensor 245, and the APC valve 244. It is also possible to include the exhaust device 246 within the exhaust system.

[0039] In addition, gas supply pipe 232 and exhaust pipe 231 are sometimes collectively referred to as gas piping.

[0040] Furthermore, a sealing cap 219, serving as a furnace opening cover, is provided below the reaction tube 203 to airtightly seal the lower opening of the reaction tube 203. The sealing cap 219 is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220, serving as a sealing component, is provided on the upper surface of the sealing cap 219 and abuts against the lower end of the reaction tube 203. A rotation mechanism 267, which rotates the crystal boat 217 (described later), is provided below the sealing cap 219. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cap 219 and is connected to the crystal boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the crystal boat 217.

[0041] The sealing cap 219 is configured to be raised and lowered vertically by a crystal boat lift 115, which is located outside the reaction tube 203 and serves as a lifting mechanism. The crystal boat lift 115 is configured as a conveying device (conveying mechanism) that moves the wafer 200 into and out of the processing chamber 201 by raising and lowering the sealing cap 219.

[0042] The wafer boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 250 wafers, arranged horizontally and aligned with each other's centers in a vertical direction, in multiple layers, i.e., arranged at intervals. The wafer boat 217 is made of heat-resistant materials such as quartz or SiC. At the bottom of the wafer boat 217, heat insulation plates 218, for example, made of heat-resistant materials such as quartz or SiC, are supported horizontally in multiple layers.

[0043] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. The energizing of the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, thereby achieving the desired temperature distribution within the processing chamber 201. The temperature sensor 263 is installed along the inner wall of the reaction tube 203.

[0044] Moreover, such as Figure 2 As shown, the controller 240, serving as the control unit (control unit), is configured as a computer equipped with a CPU (Central Processing Unit) 240a, RAM (Random Access Memory) 240b, storage device 240c, and I / O port 240d. The RAM 240b, storage device 240c, and I / O port 240d are configured to exchange data with the CPU 240a via an internal bus 240e. An input / output device 252, such as a touch panel, is connected to the controller 240.

[0045] The storage device 240c is composed of, for example, flash memory or HDD (Hard Disk Drive). The storage device 240c stores, in a readable manner, control programs that control the operation of the board processing apparatus, process parameters that describe predetermined processing steps, conditions, etc. The process parameters, mainly consisting of multiple steps, are combined in a way that enables the controller 240 to execute each step of the predetermined process and obtain a predetermined result, thus functioning as a program.

[0046] Hereinafter, the process, control program, etc., including the manufacturing process, will also be referred to as program. Furthermore, the manufacturing process will also be referred to as process. When the term "program" is used in this specification, it may include only the process unit, only the control program unit, or both. RAM240b is configured as a storage area (working area) that temporarily holds programs, data, etc., read from CPU240a.

[0047] I / O port 240d is connected to the aforementioned MFC241, valve 243, pressure sensor 245, APC valve 244, exhaust device 246, temperature sensor 263, heater 207, rotating mechanism 267, crystal boat lift 115, etc.

[0048] CPU 240a is configured to read and execute control programs from storage device 240c, and to read processes from storage device 240c based on input commands from input / output device 252. CPU 240a is configured to, according to the read processes, control MFC 241 to adjust the flow rate of various gases, open and close valves 243 and 244, adjust the pressure of APC valve 244 based on pressure sensor 245, start and stop exhaust device 246, adjust the temperature of heater 207 based on temperature sensor 263, rotate the crystal boat 217 and adjust its rotation speed using rotating mechanism 267, and lift the crystal boat 217 using crystal boat lift 115.

[0049] The controller 240 is configured to install the aforementioned program stored in the external storage device 250 onto a computer. The external storage device 250 includes, for example, a hard disk such as an HDD, an optical disk such as a CD, an optical disk such as an MO, or a semiconductor memory such as a USB flash drive. The storage device 240c and the external storage device 250 constitute a computer-readable recording medium. Hereinafter, they will also be collectively referred to as recording media. When the term "recording medium" is used in this specification, sometimes only the storage device 240c is included, sometimes only the external storage device 250 is included, or sometimes both are included. Furthermore, the program may be provided to the computer using communication means such as the Internet or a dedicated line, without using the external storage device 250.

[0050] The substrate processing apparatus 10 of this embodiment is configured such that, when editing (manufacturing) a process including multiple steps, a parameter setting area for setting control parameters and a gas mode screen including valves and gas piping are displayed on the process editing screen. In the parameter setting area, for example, when setting the control parameters of an MFC (flow controller), the icon of the MFC in the gas mode screen corresponding to the MFC with the set control parameters is clearly displayed.

[0051] Figure 3 The process editing screen 20 shown includes a step setting area 30 and a step content setting area 40. By selecting the step to be edited in the step setting area 30 on the left side of the diagram, the content of the selected step is displayed in the step content setting area 40 on the right side of the diagram. The step content setting area 40 displays a parameter setting area 41 for setting control parameters and a gas mode screen 42 for setting the opening and closing status of valves.

[0052] That is, the process editing screen 20 is configured to display a parameter setting area 41 and a gas mode screen 42 for each step. In addition, the process editing screen 20 is configured to have a step setting area 30 for setting the steps displayed in the parameter setting area 41 and the gas mode screen 42.

[0053] like Figure 4 As shown, the step setting area 30 is a two-dimensional matrix displaying steps in the vertical axis area 31 and item categories in the horizontal axis area 32. If a step to be edited is selected in the vertical axis area 31, a selection display box 34 is displayed, indicating the currently selected step.

[0054] The step setting area 30 is configured to display whether there are any changes to the control parameter settings for each item in each step. Figure 4 In the example shown, in the matrix display area 33 of the step setting area 30, the item 33a with changes is marked with an asterisk (*).

[0055] Additionally, if the control parameters are set to meet the interlocking conditions, a warning is displayed in the step setting area 30. Here, the interlocking conditions refer to the settings that indicate a problem in the substrate processing apparatus 10. The preset interlocking conditions are stored in the external storage device 250 of the controller 240. Figure 4 In the example shown, in the matrix display area 33 of the step setting area 30, the background color of the item 33b with control parameters set in a manner that meets the interlocking conditions is displayed as a warning color.

[0056] exist Figure 5The example shown has nine labels: "Summary", "Temperature", "Pressure", "MFC", "Valve", "Transfer", "AUX (External Device)", "Signal", and "Alarm".

[0057] Figure 5 The status of the "Summary" tab is displayed. The "Summary" tab is a summary of the selected steps, showing a parameter setting area 41 for setting major control parameters such as temperature, pressure, conveying, and MFC, and a gas mode screen 42 for setting valve opening and closing.

[0058] like Figure 5 As shown, apart from the "Summary" label, it consists of multiple labels divided into each category of control parameters. When the labels "Temperature," "Pressure," "MFC," "Valve," "Transport," "AUX (External Device)," "Signal," and "Alarm" are selected, the setting area for the control parameters of each item is displayed.

[0059] As control parameters related to "temperature", examples include "the control mode used in this step", "the specification of the control table", "the set value of the temperature range", "the specification of the ramp rate", and "the setting of whether there is a step termination condition".

[0060] As control parameters related to "pressure", examples include "the control mode used in this step", "the specification of the control table", "the specification of the pressure command and set value", and "the setting of whether there is a step end condition".

[0061] Control parameters related to "MFC" include, for example, "settings for each MFC", "specifying the ramp rate", and "setting whether there is a step termination condition".

[0062] As control parameters related to "valves", examples include "gas mode editing (valve open / close)".

[0063] As control parameters related to "transfer", examples include "specification of loader commands" and "specification of execution conditions (such as speed) for the loader commands to be used".

[0064] As control parameters related to "AUX (external device)," examples include "specification of setting values ​​for each AUX" and "setting of whether there is a step end condition." Furthermore, since the AUX (external device) is read-only, the controller 240 verifies whether the read value meets the conditions for the setting value.

[0065] As a control parameter related to a "signal", an example is a "signal on / off specification". Specifically, the "signal on / off specification" specifies to the controller 240 the on / off state of a particular signal. The controller 240 starts or stops operation under this signal state.

[0066] As control parameters related to "alarms," ​​examples include "alarm conditions." Alarm conditions specify whether an alarm should be generated for each monitored value. The "Alarms" tab displays the settings in use in the form of an alarm condition table, which summarizes multiple alarm conditions.

[0067] Furthermore, these control parameters are just one example; the parameters displayed on the process editing screen 20 can be appropriately set according to the process.

[0068] In the gas mode screen 42, the various components, such as multiple MFC241, multiple valves 243, processing furnace, gasifier, exhaust device, pressure regulator, etc., which are displayed as icons, are connected in a network-like manner through multiple gas pipes.

[0069] In this gas mode screen, the open / closed state of the valve can be monitored. Specifically, by switching the display color of the valve, one can determine whether the valve is open or closed.

[0070] Furthermore, in addition to monitoring the valve's open / closed state, the gas mode screen 42 also includes an operation function for users to switch the open / closed state of any valve. When using this valve operation function, users can switch between the open and closed states by clicking on the image of valve 243 displayed in the gas mode screen 42.

[0071] The controller 240 is configured to display a parameter setting area 41 for setting control parameters including at least the gas flow rate of the MFC and a gas mode screen 42 for setting the opening and closing state of the valve on a process editing screen 20 that produces a process including multiple steps, and is capable of producing a process on the process editing screen 20.

[0072] Furthermore, the controller 240 is configured to display the MFC on the gas mode screen 42 corresponding to the MFC with the set gas flow rate when the gas flow rate of the MFC is set in the gas flow rate list 50 in the parameter setting area 41. The method of displaying the MFC 241 on the gas mode screen 42 corresponding to the MFC with the set gas flow rate can be various, such as changing the display color of the MFC 241 on the gas mode screen 42, changing the display size, changing the line type of the drawn lines, changing the display brightness, etc.

[0073] Furthermore, the controller 240 is configured to explicitly display the MFC in the gas flow list 50 corresponding to the selected MFC on the gas mode screen 42, for example, when an MFC is selected. The method for explicitly displaying the MFC in the gas flow list 50 can be, for example, by moving the selection cursor 50a in the gas flow list 50 to the position of the selected MFC on the gas mode screen 42. In addition, various methods can be configured, such as changing the display color or display size of the MFC in the gas flow list 50.

[0074] exist Figure 5 The example shown illustrates how, when the gas flow rate of an MFC named "MFC_3" is set in the MFC list 50 in the parameter setting area 41, the display color of MFC241a, which is "MFC_3", is changed on the gas mode screen 42.

[0075] Furthermore, the controller 240 is configured such that if any valve is selected on the gas mode screen 42, it determines the open / closed state of that valve. When any valve is set to open on the gas mode screen 42, it confirms the prohibition condition (hereinafter referred to as the valve interlock condition) that prevents the valve from being set to the open state. If the valve meets the valve interlock condition, such as... Figure 6 As shown, a warning will be displayed.

[0076] exist Figure 6 In the example shown, when valve 243a is set to open on the gas mode screen 42, a warning message such as "conflict with valve interlock condition" is displayed because the valve interlock condition is met. Furthermore, the warning display method is not limited to the aforementioned message; it can be set to various methods such as changing the display color of valve 243a, changing the display size, changing the line type of the drawn lines, or changing the display brightness.

[0077] Furthermore, the controller 240 is configured such that when a valve with its interlocking conditions set is selected by long-pressing on the gas mode screen 42, such as... Figure 7 As shown, the valve interlock conditions are displayed on the gas mode screen 42. Furthermore, the selection method for displaying the valve interlock conditions is not limited to a long press; for example, any selection method different from the selection method used when setting the valve's open / close state, such as a right-click of the mouse, can be used.

[0078] Furthermore, the controller 240 is configured such that when any valve is selected on the gas mode screen 42, such as Figure 8 As shown, the gas piping connected to the selected valve is explicitly indicated.

[0079] exist Figure 8The example shown illustrates how, when valve 243b is selected on the gas mode screen 42, the gas piping connected to valve 243b is clearly indicated by displaying it with thick lines. Furthermore, the method of indicating the gas piping is not limited to the thick line display described above; it can be set to various other methods, such as changing the display color of the gas piping, changing the line style of the depicted gas piping, or changing the display brightness of the gas piping.

[0080] In this way, by clearly indicating the gas piping connected to the valve selected on the gas mode screen 42, it is clear which gas piping the user-selected valve is associated with, thus preventing misconfiguration.

[0081] Furthermore, the gas mode screen is configured to display at least the valves installed from the supply system that supplies raw materials such as gas to the reaction chamber to the exhaust system that depressurizes the reaction chamber to a vacuum atmosphere. Additionally, various parameters of the aforementioned components such as the MFC, vaporizer, exhaust device, and pressure regulator, which are displayed on the gas mode screen, can be set.

[0082] In this way, by selecting the icon displayed on the gas mode screen 42 to display the operation screen, the parameters of various components such as MFC241, vaporizer, exhaust device, and pressure regulator can be set.

[0083] In addition, various control parameters can be set while the gas mode screen 42, which displays icons from the gas supply side to the exhaust system, is displayed, thus preventing mis-setting.

[0084] Next, refer to Figure 9 The flowchart describes the process at the start of process editing in the substrate processing apparatus 10 of this embodiment.

[0085] exist Figure 9 In the process, first in S101, the user starts process editing. In S102, the user confirms whether they know the step to be edited. If they know the step to be edited, in S103, the user selects the step to be edited from the step setting area 30, and displays the content of the step to be edited in the step content setting area 40. In S104, the user begins editing the step.

[0086] In S102, if the step to be edited is unknown, in S105, the user selects the step in the step setting area 30 that changed the object item, and in S106, it is confirmed whether the selected step is the expected editing step.

[0087] If the step selected in S106 is the desired editing step, the user begins the editing process in S104. If the selected step is not the desired editing step, the user returns to S105 and repeats the selection and confirmation process until the desired editing step is found.

[0088] Next, refer to Figure 10 The flowchart below describes the gas setting process in the substrate processing apparatus 10 of this embodiment.

[0089] exist Figure 10 In the process, first in S201, the user begins editing the steps and starts setting the gas within the steps. Then, in S202, the user sets the opening and closing of the target valve, in S203, the user sets the flow rate of the target MFC, and in S204, the user ends the gas setting.

[0090] Next, refer to Figure 11 The flowchart illustrates the processing when the settings are changed in the parameter setting area 41 or gas mode screen 42 of the process editing screen 20 in the substrate processing apparatus 10 of this embodiment.

[0091] exist Figure 11 In step S301, when the controller 240 receives a setting change in the parameter setting area 41 or the gas mode screen 42, in step S302, it determines whether the changed setting is a mismatched setting that meets the interlocking conditions.

[0092] In step S302, if it is determined that the changed setting is not a mismatch setting (if the determination result is "no"), then the controller 240 updates the changed setting in step S303.

[0093] In S302, if the changed setting is determined to be mismatched (if the determination result is "yes"), the controller 240 will proceed as follows in S304: Figure 4 As shown in item 33b, the background color of the corresponding part of the matrix display area 33 in the step setting area 30 is updated to the warning color. After notifying the user that the setting is mismatched, the setting is updated to the changed setting in S303.

[0094] Next, refer to Figure 12 The flowchart illustrates the process of displaying MFC correspondingly in the parameter setting area 41 and the gas mode screen 42 on the process editing screen 20 of the substrate processing apparatus 10 in this embodiment.

[0095] exist Figure 12 In S401, the controller 240 first displays a parameter setting area 41 containing a gas flow list 50 and a gas mode screen 42.

[0096] Next, in S402, after the controller 240 receives a change in the selection state of MFC in either the gas flow list 50 or the gas mode screen 42, in S403, it determines whether a change in the selection state of MFC has occurred in the gas flow list 50.

[0097] Then, in S403, if it is determined that the selection state of MFC has changed in the gas flow list 50 (if the determination result is "yes"), the controller 240 changes the display color of the MFC selected in the gas flow list 50 in the gas mode screen 42 in S404, and updates the depiction of the process editing screen 20 in S405.

[0098] In addition, if it is determined in S403 that no change in the selection state of MFC has occurred in the gas flow list 50 (if the determination result is "No"), that is, if it is determined that a change in the selection state of MFC has occurred in the gas mode screen 42, the controller 240 moves the selection position of the selection cursor 50a to the MFC in the gas flow list 50 corresponding to the gas mode screen 42 in S406, and updates the depiction of the process editing screen 20 in S405.

[0099] In this way, by correspondingly displaying the MFC in the gas flow list 50 of the parameter setting area 41 and the gas mode screen 42, it is clear which gas line the user wants to set, thus preventing incorrect settings. Furthermore, MFM is of course the same as the aforementioned MFC.

[0100] Next, refer to Figure 13 The flowchart illustrates the processing when an arbitrary valve is selected on the gas mode screen 42 of the process editing screen 20 in the substrate processing apparatus 10 of this embodiment.

[0101] exist Figure 13 In the S501, the controller 240 first displays the gas mode screen 42.

[0102] Next, in S502, when the controller 240 selects any valve in the gas mode screen 42, it determines whether the selection is based on a long press.

[0103] If the selection is determined to be based on a long press in S502 (if the determination result is "yes"), the controller 240 determines in S503 whether a valve interlock condition is set for the selected valve.

[0104] In S503, if it is determined that a valve interlock condition has been set for the selected valve (if the determination result is "yes"), the controller 240, in S504, on the gas mode screen 42, as follows... Figure 7 The valve interlock conditions are displayed as shown.

[0105] In S503, if it is determined that the valve interlock condition has not been set for the selected valve (if the determination result is "no"), the controller 240 displays a message indicating that the valve interlock condition has not been set for the selected valve on the gas mode screen 42 in S505.

[0106] In addition, if the selection is determined not to be based on a long press in S502 (if the determination result is "no"), the controller 240 considers the selection of the valve as a switching indication of the valve's open / closed state, and in S506, it determines whether the selected valve is in the open state.

[0107] If the selected valve is determined to be in the open state in S506 (if the determination result is "yes"), the controller 240 makes the selected valve close in S507.

[0108] In S506, if it is determined that the selected valve is not in the open state (if the determination result is "no"), that is, if it is determined that the selected valve is in the closed state, the controller 240 determines in S508 whether a valve interlock condition is set for the selected valve.

[0109] If it is determined in S508 that a valve interlock condition is set for the selected valve (if the determination result is "yes"), the controller 240 determines in S509 whether the opening setting of the selected valve meets the valve interlock condition.

[0110] If, in S509, it is determined that the opening setting for the selected valve meets the valve interlocking conditions (if the determination result is "yes"), then in S510, the controller 240... Figure 6 As shown, a warning is displayed on the gas mode screen 42, and the selected valve is set to the open state in S511.

[0111] If in S508 it is determined that the valve interlock condition has not been set for the selected valve (if the determination result is "no"), or in S509 it is determined that the opening setting of the selected valve does not meet the valve interlock condition (if the determination result is "no"), the controller 240 does not display a warning on the gas mode screen 42, and sets the selected valve to the open state in S511.

[0112] In this way, when any valve is selected on the gas mode screen 42, the open / closed state of any valve is determined. When any valve is set to open on the gas mode screen 42, the valve interlocking condition is confirmed. If the valve meets the valve interlocking condition, a warning is displayed, thereby preventing the valve from being set incorrectly.

[0113] In addition, when a valve with valve interlock conditions is selected by long-pressing on the gas mode screen 42, the valve interlock conditions are displayed on the gas mode screen 42, allowing the user to visually confirm the valve interlock conditions, thereby preventing the valve from being set incorrectly.

[0114] Next, refer to Figure 14 The flowchart describes the processing in the step setting area 30 of the display process editing screen 20 in the substrate processing apparatus 10 of this embodiment.

[0115] exist Figure 14 In step S601, the controller 240 first displays a process editing screen 20, which includes a step setting area 30 and a step content setting area 40. The process editing screen 20 is configured such that, by allowing the user to select a step to be edited in the step setting area 30, the content of the selected step is displayed in the step content setting area 40.

[0116] Next, in steps S602 to S608, the controller 240 performs a determination process for each item in each step to determine whether there is a change point or a setting that meets the interlocking conditions (mismatch setting).

[0117] In the determination process, for each item in each step, in S603, the controller 240 determines whether there is a change point in the control parameter relative to the reference setting for the item in the determination process. Here, the reference setting may be the initial setting pre-saved in the substrate processing device 10, or it may be the setting in a file generated and saved by the user.

[0118] In S603, if it is determined that there is no change point relative to the reference setting (if the determination result is "No"), such as Figure 4 As shown, in S604, the controller 240 sets the corresponding part of the matrix display area 33 to "text: none" and "background color: none".

[0119] If it is determined in S603 that there is a change point relative to the reference setting (if the determination result is "yes"), the controller 240 determines in S605 whether there is a setting of control parameters that meets the interlocking conditions (mismatch setting) for the items in the determination process.

[0120] In S605, if it is determined that there is no mismatch setting (if the determination result is "no"), such as Figure 4 As shown in item 33a, the controller 240 sets the corresponding part of the matrix display area 33 to "text: *" and "background color: none" in S606.

[0121] In S605, if a mismatch is detected (if the determination result is "yes"), such as Figure 4 As shown in item 33b, the controller 240 sets the corresponding part of the matrix display area 33 to "text: *" and "background color: warning color" in S607.

[0122] In this way, by setting the process editing screen 20 to have a step setting area 30 and a step content setting area 40 with a parameter setting area and a gas mode screen, the user can visually confirm the parameter information set for each step in the step content setting area 40, thus preventing the effect of incorrect setting.

[0123] In addition, by displaying whether there are any changes to the control parameters from the baseline setting in the step setting area 30, the user can visually confirm the changes to the control parameters set in each step, thus preventing incorrect settings.

[0124] In addition, in the step setting area 30, if there are control parameters that meet the interlocking conditions, a warning is displayed and the user is visually confirmed, thereby enabling the user to release the interlock without omission.

[0125] The above describes various typical embodiments of this disclosure, but this disclosure is not limited to these embodiments and can also be used in appropriate combinations.

[0126] For example, the substrate processing apparatus 10 in the embodiments of this disclosure can be applied not only to semiconductor manufacturing apparatuses for manufacturing semiconductors, but also to apparatuses for processing glass substrates, such as LCD devices. Furthermore, substrate processing includes, for example, CVD, PVD, forming oxide films, forming nitride films, forming metal-containing films, annealing, oxidation, nitriding, and diffusion processes. Additionally, it can naturally be applied to various substrate processing apparatuses such as exposure apparatuses, coating apparatuses, drying apparatuses, and heating apparatuses.

[0127] Symbol Explanation

[0128] 10. Substrate processing apparatus

[0129] 20-process editing screen,

[0130] 30 steps to set up the area

[0131] 40 steps to set the content area

[0132] 200 wafers (substrates)

[0133] 202 processing furnace

[0134] 240 controller

[0135] 241 Mass Flow Controller (MFC)

[0136] Valve 243.

Claims

1. A method for manufacturing a semiconductor device, the method comprising the steps of: displaying, on a process editing screen for manufacturing a process comprising multiple steps, a parameter setting area for setting control parameters for a gas flow rate including at least a flow controller and a gas mode screen for setting the opening and closing state of a valve; editing the process on the process editing screen; and processing a substrate by executing the edited process, characterized in that, During the process of editing the aforementioned manufacturing process, when setting the gas flow rate of the flow controller in the parameter setting area, the flow controller on the gas mode screen corresponding to the flow controller with the set gas flow rate is explicitly displayed. When a valve with a prohibition condition that prevents the valve from being set to the open state is selected on the gas mode screen, the prohibition condition will be displayed on the gas mode screen.

2. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The process of editing the process includes setting the opening and closing state of the valve on the gas mode screen. In the process of setting the opening and closing state of a valve on the gas mode screen, when any valve is selected on the gas mode screen, the opening and closing state of the arbitrary valve is determined.

3. The method for manufacturing a semiconductor device according to claim 2, characterized in that, In the process of setting the valve's open / closed state on the gas mode screen, when setting the open state of any valve on the gas mode screen, a prohibition condition for prohibiting the valve from being set to the open state is confirmed, and a warning is displayed if the valve meets the prohibition condition.

4. The method for manufacturing a semiconductor device according to claim 2, characterized in that, In the process of setting the opening and closing state of the valve on the gas mode screen, when any valve is selected on the gas mode screen, the gas piping connected to the selected valve is explicitly indicated.

5. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The gas mode screen is configured to display at least the valves installed from the supply system that supplies raw materials to the reaction chamber to the exhaust system that depressurizes the reaction chamber to a vacuum atmosphere.

6. The method for manufacturing a semiconductor device according to claim 5, characterized in that, The gas mode screen is also configured to display at least one icon of a flow controller, vaporizer, exhaust device, and pressure regulator.

7. The method for manufacturing a semiconductor device according to claim 6, characterized in that, The icon representing at least one of the flow controller, vaporizer, exhaust device, and pressure regulator is displayed on the gas mode screen in a manner that allows parameters to be set.

8. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The process editing screen is also configured to allow setting a parameter associated with at least one of temperature and pressure as the aforementioned control parameter.

9. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The process editing screen also has a toggle button to switch the type of control parameter to be displayed.

10. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The various parameter selections displayed on the process editing screen include at least one of the following: temperature, pressure, valve, flow controller, conveying, external equipment, and signal.

11. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The process editing screen has a step setting area for selecting the step to be edited. In the displayed process, the parameter setting area corresponding to the step selected in the step setting area and the gas mode screen are displayed.

12. The method for manufacturing a semiconductor device according to claim 11, characterized in that, The process editing screen displays the parameter setting area and gas mode screen for each step.

13. The method for manufacturing a semiconductor device according to claim 12, characterized in that, The step setting area displays whether there are any changes to the control parameters for each step.

14. The method for manufacturing a semiconductor device according to claim 12, characterized in that, When the control parameters are set to meet the interlocking conditions, a warning is displayed in the step setting area.

15. The method for manufacturing a semiconductor device according to claim 1, characterized in that, The process editing screen has a step setting area for selecting the step to be edited. The step setting area is configured to display the plurality of steps, and for each step, to display whether or not there are any changes to the control parameters by category.

16. A display method, wherein a step content setting area and a step setting area are displayed on a process editing screen for editing a process comprising multiple steps, the step content setting area including a parameter setting area and a gas mode screen for setting the opening and closing states of valves, the parameter setting area being displayed for each step and setting control parameters including at least a gas flow rate controller, and the step setting area setting the steps to be displayed in the step content setting area, characterized in that, The step setting area displays whether there are any changes to the control parameters for each step. When a valve with an interlock condition that prevents the valve from being set to the open state is selected on the gas mode screen, the interlock condition will be displayed on the gas mode screen.

17. The display method according to claim 16, characterized in that, When the control parameters are set to meet the interlocking conditions, a warning is displayed in the step setting area.

18. The display method according to claim 16, characterized in that, When a predetermined step is selected in the step setting area, the content set in the predetermined step is displayed in the step content setting area.

19. A computer-readable recording medium recording a program executed by a substrate processing apparatus, the substrate processing apparatus comprising a control unit that sets multiple parameters to perform a manufacturing process and processes the substrate by executing the manufactured process, characterized in that... The program uses a computer to cause the substrate processing device to perform the following steps: The process editing screen for creating a multi-step process displays steps including a parameter setting area for setting control parameters for gas flow (including at least a flow controller) and a gas mode screen for setting the opening and closing status of valves; and The steps for editing the process on the process editing screen are as follows: The step of editing the process includes: When setting the gas flow rate of the flow controller in the parameter setting area, the steps of explicitly displaying the flow controller on the gas mode screen corresponding to the flow controller with the set gas flow rate are as follows: as well as When a valve with a prohibition condition that prevents the valve from being set to the open state is selected on the gas mode screen, the prohibition condition is displayed on the gas mode screen.

20. A substrate processing apparatus comprising a control unit that sets a plurality of parameters to manufacture a process and is capable of controlling the substrate to be processed by executing the manufactured process, characterized in that, The control unit is configured to perform the following processes: The process editing screen for creating a process that involves multiple steps displays a parameter setting area for setting control parameters for gas flow, including at least a flow controller, and a gas mode screen for setting the opening and closing status of valves. as well as The process is edited on the process editing screen. In the process of editing the aforementioned process, when setting the gas flow rate of the flow controller in the parameter setting area, the flow controller on the gas mode screen corresponding to the flow controller with the set gas flow rate is explicitly displayed. When a valve with a prohibition condition that prevents the valve from being set to the open state is selected on the gas mode screen, the prohibition condition will be displayed on the gas mode screen.

Citation Information

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