Method of making a probe tip and a probe tip made thereby

Abstract

A probe tip according to various embodiments of the present disclosure includes a first plating layer including a first metal, a second plating layer disposed on one side of the first plating layer and including a second metal of a different material from the first metal, and a third plating layer disposed on one side of the second plating layer and including the first metal, the first plating layer, the second plating layer, and the third plating layer each extending in a length direction of the probe tip, the first plating layer, the second plating layer, and the third plating layer being stackable in a thickness direction of the probe tip.

Description

Technical Field

[0001] Various embodiments of this disclosure relate to a method for preparing a probe tip and a probe tip prepared therefrom. Background Technology

[0002] In electrical die sorting (EDS), which is used to detect the electrical properties of a test object, a probe card serves as the interface between the tester and the test object. The probe card receives electrical signals from the test object and transmits them to the tester (e.g., a semiconductor testing device) to detect whether the test object is defective or not.

[0003] A probe card may include probe tips that directly contact the pads of the device under test (e.g., connection terminals for external signals) to transmit and receive electrical signals. A probe card may include multiple probe tips, each capable of contacting the device under test and transmitting and receiving electrical signals independently. As the integration density of semiconductor integrated circuits increases, the spacing between the pads of the device under test is decreasing, and the probe tips that contact the pads are also becoming smaller. Summary of the Invention

[0004] Technical problems to be solved

[0005] As semiconductor devices become miniaturized and increasingly finer, the size of their pads also decreases, allowing for the miniaturization of probe tips used for electrical characteristic detection. However, the reduced rigidity of these miniaturized probe tips increases the likelihood of breakage due to repeated contact with the object being tested. Therefore, there is a need for probe tip construction and fabrication methods that can improve the durability of these miniaturized probe tips.

[0006] Various embodiments of this disclosure provide a miniaturized probe tip with improved durability and a method for its fabrication.

[0007] Problem Solving Methods

[0008] A probe tip according to various embodiments of the present disclosure includes: a first coating having a first thickness along the thickness direction of the probe tip and comprising a first metal; a second coating disposed on one side of the first coating having a second thickness along the thickness direction of the probe tip and comprising a second metal of a different material from the first metal; and a third coating disposed on one side of the second coating having a third thickness along the thickness direction of the probe tip and comprising the first metal, wherein the hardness of the second coating is higher than the hardness of the first coating and the hardness of the third coating, and the second thickness is thicker than the first thickness and the third thickness, the first coating, the second coating and the third coating extend along the length direction of the probe tip, and the first coating, the second coating and the third coating are stackable along the thickness direction of the probe tip.

[0009] A method for fabricating a probe tip according to various embodiments of the present disclosure includes: a step of forming a substrate layer; a step of forming a photoresist layer, the photoresist layer including an opening on one side of the substrate layer; a step of forming a first coating layer, the first coating layer having a first thickness in at least a portion of the opening in the photoresist layer along a direction perpendicular to one side of the substrate layer, and including a first metal; a step of forming a second coating layer, the second coating layer having a second thickness on one side of the first coating layer along a direction perpendicular to one side of the first coating layer, and including a second metal of a different material from the first metal; and a step of forming a third coating layer, the third coating layer having a third thickness on one side of the second coating layer along a direction perpendicular to one side of the second coating layer, and including the first metal, wherein the hardness of the second coating layer is higher than the hardness of the first coating layer and the hardness of the third coating layer, the second thickness is thicker than the first thickness and the third thickness, and the first coating layer, the second coating layer, and the third coating layer can be stacked in a direction away from one side of the substrate layer.

[0010] A probe tip according to various embodiments of the present disclosure can be fabricated by a probe tip fabrication method comprising: forming a substrate layer; forming a photoresist layer, the photoresist layer including an opening on one side of the substrate layer; forming a first plating layer, the first plating layer having a first thickness in at least a portion of the opening in the photoresist layer along a direction perpendicular to one side of the substrate layer, and including a first metal; forming a second plating layer, the second plating layer having a second thickness on one side of the first plating layer along a direction perpendicular to one side of the first plating layer, and including a second metal of a different material than the first metal; and forming a third plating layer, the third plating layer having a third thickness on one side of the second plating layer along a direction perpendicular to one side of the second plating layer, and including the first metal, wherein the hardness of the second plating layer is higher than the hardness of the first plating layer and the hardness of the third plating layer, the second thickness is thicker than the first thickness and the third thickness, and the first plating layer, the second plating layer, and the third plating layer are stacked in a direction away from one side of the substrate layer.

[0011] Invention Effects

[0012] Various embodiments of this disclosure provide methods for preparing probe tips with improved durability.

[0013] Various embodiments of this disclosure can provide probe tips with improved durability. Attached Figure Description

[0014] Figure 1 This is a schematic diagram illustrating a probe tip according to various embodiments of the present disclosure.

[0015] Figure 2 To take photographs of the probe tip of a prototype according to various embodiments of the present disclosure.

[0016] Figure 3a and Figure 3b This is a schematic diagram illustrating a method for preparing a probe tip according to various embodiments of the present disclosure.

[0017] Figure 4 A graph showing the shear stress at the time of probe tip failure according to various embodiments of the present disclosure. Detailed Implementation

[0018] Figure 1 This is a schematic diagram illustrating a probe tip 100 according to various embodiments of the present disclosure.

[0019] In describing the probe tip 100 according to various embodiments of the present disclosure, the thickness direction of the probe tip 100 refers to the z-axis direction, and the length direction of the probe tip 100 may refer to the x-axis direction.

[0020] In various embodiments, the probe tip 100 may be formed to have a predetermined length along the length direction (e.g., the x-axis direction) of the probe tip 100. The probe tip 100 may be a portion on a probe card (not shown) for electrical characteristic detection that contacts the object under test (not shown). The probe tip 100 may be configured to protrude from at least a portion of the probe card (not shown) along the length direction (e.g., the x-axis direction) of the probe tip 100, and may contact the object under test (not shown) at its end along the length direction of the probe tip 100.

[0021] In various embodiments, the probe tip 100 may include a first coating 110, a second coating 120, and / or a third coating 130.

[0022] In various embodiments, the first coating 110, the second coating 120, and the third coating 130 may be stacked along the thickness direction (e.g., the z-axis direction) of the probe tip 100. For example, the second coating 120 may be disposed in the positive z-axis direction of the first coating 110. The third coating 130 may be disposed in the positive z-axis direction of the second coating 120.

[0023] In various embodiments, the third coating 130 may be disposed on one side of the second coating 120. The first coating 110 may be disposed on the other side of the second coating 120. One side of the second coating 120 may refer to the surface facing the positive z-axis direction from the second coating 120. The other side of the second coating 120 may refer to the surface facing the negative z-axis direction from the second coating 120.

[0024] In various embodiments, the first coating 110, the second coating 120, and the third coating 130 may extend along the length direction (e.g., the x-axis direction) of the probe tip 100, respectively.

[0025] In various embodiments, one end of the probe tip 100 may refer to the end located in the negative x-axis direction with reference to the probe tip 100. The other end of the probe tip 100 may refer to the end located in the positive x-axis direction with reference to the probe tip 100.

[0026] In various embodiments, the probe tip 100 may contact at least a portion of an externally located object to be detected (e.g., a semiconductor, not shown). For example, one end of the probe tip 100 may be configured with an externally located object to be detected. In the first plating layer 110, the second plating layer 120, and / or the third plating layer 130, the probe tip 100 contacts the object to be detected at one end of the probe tip 100 and can receive and transmit electrical signals.

[0027] In various embodiments, the first plating layer 110, the second plating layer 120, and / or the third plating layer 130 may include a metallic material.

[0028] In one embodiment, the first plating layer 110 and the third plating layer 130 may comprise the same type of metal material.

[0029] In various embodiments, the probe tip 100 may include a first metal and a second metal. For example, the first plating layer 110 and the third plating layer 130 may include the first metal. The second plating layer 120 may include the second metal. The second metal may be a different material from the first metal.

[0030] In various embodiments, the first metal and the second metal may be formed of any one of nickel (Ni), beryllium (Be), copper (Cu), cobalt (Co), tungsten (W), rhodium (Rh) or alloys thereof.

[0031] In various embodiments, the first metal may have a lower hardness than the second metal.

[0032] In various embodiments, the hardness of the first coating 110, the second coating 120, and / or the third coating 130 may refer to Vickers hardness (HV).

[0033] In various embodiments, the first coating 110 and the third coating 130 may have a lower hardness than the second coating 120. For example, the hardness of the first coating 110 and the third coating 130 may be approximately 520 Hv to 720 Hv. The hardness of the second coating 120 may be approximately 900 Hv to 1000 Hv.

[0034] In one embodiment, the first coating 110 and the third coating 130 may have the same hardness. For example, the first coating 110 and the third coating 130 may be formed to have the same hardness in the range of approximately 520 Hv to 720 Hv.

[0035] In various embodiments, the first thickness L1 may refer to the thickness of the first coating 110 along the thickness direction (e.g., the z-axis direction) of the probe tip 100. The second thickness L2 may refer to the thickness of the second coating 120 along the thickness direction (e.g., the z-axis direction) of the probe tip 100. The third thickness L3 may refer to the thickness of the third coating 130 along the thickness direction (e.g., the z-axis direction) of the probe tip 100.

[0036] In various embodiments, the fourth thickness L4 refers to the overall thickness of the probe tip 100, which may refer to the thickness of the overall probe tip 100 along the thickness direction of the probe tip 100 (e.g., the z-axis direction).

[0037] In various embodiments, the first thickness L1 and the third thickness L3 may be formed to be thinner than the second thickness L2.

[0038] In one embodiment, the sum of the first thickness L1 and the third thickness L3 may be thinner than the second thickness L2. For example, the second thickness L2 may be formed to be approximately 55% to 95% of the fourth thickness L4. The sum of the first thickness L1 and the third thickness L3 may be formed to be approximately 5% to 45% of the fourth thickness L4. The second plating 120 of the probe tip 100 has a higher hardness than the first plating 110 and the third plating 130. Therefore, in order to enhance the overall hardness of the probe tip 100, the proportion of the thickness of the second plating 120 in the overall thickness of the probe tip 100 is formed to be larger than the proportion of the sum of the thicknesses of the first plating 110 and the third plating 130.

[0039] In one embodiment, the probe tip 100 may be formed in an asymmetrical shape relative to the second coating layer 120. For example, the probe tip 100 may be formed by a third coating layer 130 located on one side of the second coating layer 120 and a first coating layer 110 located on the other side of the second coating layer 120 having different thicknesses.

[0040] In one embodiment, the thicknesses of the first plating layer 110 and the third plating layer 130 may be formed differently. For example, the first plating layer 110 may be thinner than the third plating layer 130, or the first plating layer 110 may be thicker than the third plating layer 130.

[0041] In one embodiment, the probe tip 100 may include a symmetrical shape in at least a portion. For example, the probe tip 100 may have a symmetrical shape at its center point in the thickness direction (e.g., the z-axis direction) of the probe tip 100, based on a virtual straight line parallel to the length direction (e.g., the x-axis direction) of the probe tip 100. When the probe tip 100 includes a symmetrical shape, the thickness of the first coating 110 and the thickness of the third coating 130 may be formed identically. For example, the first thickness L1 and the third thickness L3 may be formed identically.

[0042] In various embodiments, the first plating layer 110, the second plating layer 120, and / or the third plating layer 130 may be formed by electroplating.

[0043] Figure 2 To take photographs of prototypes of probe tips 100 according to various embodiments of the present disclosure.

[0044] Figure 2 For filming and Figure 1 The image shows a photograph of the probe tip 100 corresponding to the probe tip 100 in the diagram.

[0045] Reference Figure 2 The probe tip 100 may include a first coating 110, a second coating 120 and / or a third coating 130.

[0046] In describing the probe tip 100 according to various embodiments of the present disclosure, the thickness direction of the probe tip 100 refers to the z-axis direction, and the width direction of the probe tip 100 may refer to the y-axis direction. The width direction (e.g., y-axis direction) of the probe tip 100 may refer to both the thickness direction (e.g., z-axis direction) and the length direction (e.g., x-axis direction, see reference). Figure 1 (Vertical direction)

[0047] Reference Figure 2 The third coating 130 may be disposed on one side of the second coating 120, and the first coating 110 may be disposed on the other side of the second coating 120. One side of the second coating 120 may refer to the surface facing the positive z-axis direction from the second coating 120. The other side of the second coating 120 may refer to the surface facing the negative z-axis direction from the second coating 120.

[0048] In various embodiments, the first coating layer 110, the second coating layer 120, and the third coating layer 130 can be stacked sequentially with the thickness direction (e.g., the z-axis direction) of the probe tip 100 as a reference.

[0049] Reference Figure 2 Along the thickness direction of the probe tip 100 (e.g., the z-axis direction), the thickness of the second coating 120 can be formed to be thicker than the thickness of the first coating 110 and the third coating 130.

[0050] exist Figure 2 In the diagram, the portion disposed on one side (e.g., the side facing the negative y-axis with reference to the probe tip 100) and the other side (e.g., the side facing the positive y-axis with reference to the probe tip 100) of the probe tip 100 can be formed using a photoresist process to create a photoresist layer 220 for the probe tip 100. Figure 2 In this process, the layer disposed on the other side of the first coating 110 of the probe tip 100 (e.g., the surface from the first coating 110 toward the negative z-axis direction) can be a base layer 210 that serves to support the probe tip 100 during the fabrication of the probe tip 100.

[0051] Figure 3a This is a schematic diagram illustrating a method 300 for preparing a probe tip 100 according to various embodiments of the present disclosure.

[0052] Figure 3b A flowchart illustrating a method 300 for preparing a probe tip 100 according to various embodiments of the present disclosure.

[0053] Refer to Figure 3a and Figure 3bThe method 300 for preparing the probe tip 100 according to various embodiments of the present disclosure may include: step 301 of forming a photoresist layer 220; step 302 of forming a first coating layer 110; step 303 of forming a second coating layer 120 and / or step 304 of forming a third coating layer 130.

[0054] In step 301, a photoresist layer 220 including an opening 221 may be formed. The photoresist layer 220 may be formed by a photolithography process (e.g., photoetching process).

[0055] In various embodiments, a base layer 210 may be formed. In the method 300 for fabricating the probe tip 100, the probe tip 100 may be disposed on one side of the base layer 210. The base layer 210 may serve to support the probe tip 100 during the fabrication process.

[0056] In various embodiments, the substrate 210 may contain the same material as the probe tip 100. For example, the substrate 210 may contain a metal (e.g., a first metal) included in a first plating 110 of the probe tip 100, or it may contain a metal (e.g., a second metal) included in a second plating 120 of the probe tip 100.

[0057] In various embodiments, the base layer 210 may be formed in multiple ways, and the multiple base layers 210 may each contain different materials. For example, in Figure 3a In the probe tip 100, the base layer 210 adjacent to one end (e.g., the end located in the negative x-axis direction with reference to the probe tip 100) may include a first metal. The base layer 210 adjacent to the other end of the probe tip 100 may include a second metal. The first metal and the second metal may be formed of any one of nickel (Ni), beryllium (Be), copper (Cu), cobalt (Co), tungsten (W), rhodium (Rh), or alloys thereof.

[0058] In various embodiments, the photoresist layer 220 may be disposed on one side of the substrate layer 210.

[0059] In various embodiments, the photoresist layer 220 may include an opening 221 in at least a portion.

[0060] In various embodiments, the photolithography process may include a resist formation process, an exposure process, and a development process. The resist formation process may include a process for forming a photoresist layer 220 whose chemical properties may change due to light. For example, in the resist formation process, a photoresist layer 220 that can harden or change to a more easily soluble state under light can be disposed on one side of the substrate layer 210 (e.g., the side from the substrate layer 210 toward the positive z-axis). The photoresist layer 220 may include dry film photoresist and a deposited material for adhering the dry film photoresist.

[0061] In various embodiments, the exposure process may include selectively irradiating light after a patterned mask is applied to the photoresist layer 220. The exposure process can represent the area on the photoresist layer 220 where the opening 221 is to be formed. For example, in the exposure process, light may be selectively irradiated after a mask with a pattern representing the opening 221 is applied to the photoresist layer 220. The pattern formed on the mask may be formed in a positive or negative manner. A positive manner removes areas exposed to light through the mask, while a negative manner removes areas not exposed to light. Depending on the pattern formed on the mask, light may be irradiated onto the area where the opening 221 of the photoresist layer 220 is formed, or onto the area where the opening 221 of the photoresist layer 220 is not formed.

[0062] In various embodiments, the developing process selectively removes portions of the photoresist layer 220 that are illuminated or unilluminated by a developing solution. The developing process can selectively remove regions in the photoresist layer 220 corresponding to openings 221. The photoetching process may include an etching step to remove any remaining deposits after the developing process.

[0063] In step 302, the first coating 110 may be formed in at least a portion of the opening 221 of the photoresist layer 220. For example, the first coating 110 may be disposed in a space formed in one side of the substrate layer 210 within the opening 221 of the photoresist layer 220.

[0064] In various embodiments, the first coating 110 can be formed by electroplating. For example, the first coating 110 can be formed by electroplating a coating material (e.g., a first metal) onto at least a portion of the opening 221 of the photoresist layer 220.

[0065] In various embodiments, in order to form the first plating layer 110 by electroplating, one electrode of the power supply for plating is applied at the location where the first plating layer 110 is formed, and the other electrode of the power supply for plating is applied on the plating material side. For example, a cathode of the power supply for plating is applied at the location where the first plating layer 110 is formed (e.g., the side of the substrate layer 210 with the opening 221), and an anode of the power supply for plating is applied to the plating material (e.g., the first metal).

[0066] In various embodiments, the first coating 110 may have a thickness along a direction perpendicular to one side of the substrate 210 (e.g., the z-axis direction). The thickness of the first coating 110 may be a first thickness L1 (refer to...). Figure 1 The first coating 110 may include a first metal.

[0067] In various embodiments, the hardness of the first coating 110 can be 520 Hv to 720 Hv. The hardness of the first coating 110 can refer to Vickers hardness.

[0068] In step 303, a second coating 120 may be formed on one side of the first coating 110.

[0069] In various embodiments, the second coating layer 120 may be disposed on one side of the first coating layer 110 in the space inside the opening 221 formed in the photoresist layer 220.

[0070] In various embodiments, the second coating 120 may be formed by electroplating. For example, the second coating 120 may be formed by electroplating a coating material (e.g., a second metal) onto at least a portion of the opening 221 of the photoresist layer 220.

[0071] In various embodiments, the plating material for the second plating layer 120 may be a different type of metal than that for the first plating layer 110. For example, a second metal may be used as the plating material for the second plating layer 120, while a first metal may be used as the plating material for the first plating layer 110.

[0072] In various embodiments, in order to form the second plating layer 120 by electroplating, one electrode of the power supply for plating is applied at the location where the second plating layer 120 is formed, and the other electrode of the power supply for plating is applied on the plating material (e.g., the second metal) side. For example, the cathode of the power supply for plating is applied at the location where the second plating layer 120 is formed (e.g., one side of the first plating layer 110 located inside the opening 221), and the anode of the power supply for plating is applied to the plating material (e.g., the second metal).

[0073] In various embodiments, step 303 may include a surface treatment process for enhancing the adhesion of the first coating 110 and the second coating 120.

[0074] In various embodiments, the surface treatment process may include a dry ashing process. A dry ashing process can refer to a process that removes residual material (e.g., photoresist layer 220) before plating to facilitate the plating of the second coating layer 120. A plasma-based ashing process can be used as a dry ashing process. For example, oxygen plasma is used to remove residual material (e.g., photoresist layer 220), making it easier for the second coating layer 120 to be deposited onto one side of the first coating layer 110.

[0075] In various embodiments, the surface treatment process may include a process (e.g., a pretreatment process) of chemically removing external substances adhering to one side of the first coating 110 before forming the second coating 120 on one side of the first coating 110. For example, external substances of a different material from the first coating 110 formed on the surface of the first coating 110 may be chemically removed. By chemically removing external substances from the surface of the first coating 110 through a surface treatment process, the adhesion between the first coating 110 and the second coating 120 can be enhanced.

[0076] In various embodiments, the surface treatment process may include a process (e.g., a post-treatment process) to prevent the second coating 120 from being contaminated by external substances after the second coating 120 is formed on one side of the first coating 110. For example, drying or heating the surface of the second coating 120 after its formation, or forming an additional coating on the surface of the second coating 120, can prevent contamination caused by external substances.

[0077] In various embodiments, the second coating 120 may have a thickness along a direction perpendicular to one side of the first coating 110 (e.g., the z-axis direction). The thickness of the second coating 120 may be a second thickness L2 (refer to...). Figure 1 The second coating 120 may contain a second metal.

[0078] In various embodiments, the second coating 120 may be formed to be thicker than the first coating 110.

[0079] In various embodiments, the hardness of the second coating 120 may be higher than that of the first coating 110. For example, the hardness of the first coating 110 may be 520 Hv to 720 Hv, and the hardness of the second coating 120 may be 900 Hv to 1000 Hv.

[0080] In step 304, a third coating 130 may be formed on one side of the second coating 120.

[0081] In various embodiments, the third coating layer 130 may be disposed on one side of the second coating layer 120 in the space inside the opening 221 formed in the photoresist layer 220.

[0082] In various embodiments, the third coating 130 can be formed by electroplating. For example, the third coating 130 can be formed by electroplating at least a portion of the opening 221 of the photoresist layer 220 with a coating material (e.g., a first metal).

[0083] In various embodiments, the plating material for the third plating layer 130 can be the same type of metal as that for the first plating layer 110. For example, the first metal used as the plating material for the first plating layer 110 can be used as the plating material for the third plating layer 130.

[0084] In various embodiments, in order to form the third plating layer 130 by electroplating, one electrode of the power supply for plating is applied at the location where the third plating layer 130 is formed, and the other electrode of the power supply for plating is applied on the plating material (e.g., the first metal) side. For example, the cathode of the power supply for plating is applied at the location where the third plating layer 130 is formed (e.g., on one side of the second plating layer 120 located inside the opening 221), and the anode of the power supply for plating is applied to the plating material (e.g., the first metal).

[0085] In various embodiments, step 304 may include a surface treatment process for enhancing the adhesion of the second coating 120 and the third coating 130.

[0086] In various embodiments, the surface treatment process may include a dry ashing process. A dry ashing process can refer to a process that removes residual material (e.g., photoresist layer 220) before plating to facilitate the plating of the third coating layer 130. A plasma-based ashing process can be used as a dry ashing process. For example, oxygen plasma is used to remove residual material (e.g., photoresist layer 220) so that the third coating layer 130 can be easily deposited onto one side of the second coating layer 120.

[0087] In various embodiments, the surface treatment process may include a process (e.g., a pretreatment process) of chemically removing external substances adhering to one side of the second coating 120 before forming the third coating 130 on one side of the second coating 120. For example, external substances of a different material from the second coating 120 formed on the surface of the second coating 120 may be chemically removed. By chemically removing external substances from the surface of the second coating 120 through the surface treatment process, the adhesion between the second coating 120 and the third coating 130 can be enhanced.

[0088] In various embodiments, the surface treatment process may include a process (e.g., a post-treatment process) to prevent the third coating 130 from being contaminated by external substances after the third coating 130 is formed on one side of the second coating 120. For example, drying or heating the surface of the third coating 130 after its formation, or forming an additional coating on the surface of the third coating 130, can prevent contamination caused by external substances.

[0089] In various embodiments, the third coating 130 may have a thickness along a direction perpendicular to one side of the second coating 120 (e.g., the z-axis direction). The thickness of the third coating 130 may be a third thickness L3 (refer to...). Figure 1 The third coating 130 may contain the first metal.

[0090] In one embodiment, the second coating 120 may be formed to be thicker than the first coating 110 and the third coating 130.

[0091] In one embodiment, the third coating 130 may be formed to have the same thickness as the first coating 110.

[0092] In one embodiment, the thicknesses of the first plating layer 110 and the third plating layer 130 may be formed differently. For example, the thickness of the first plating layer 110 may be thinner than the thickness of the third plating layer 130, or the thickness of the first plating layer 110 may be thicker than the thickness of the third plating layer 130.

[0093] In one embodiment, the third coating 130 may have the same hardness as the first coating 110. For example, the hardness of the third coating 130 may be 520 Hv to 720 Hv.

[0094] In various embodiments, the first thickness L1 and the third thickness L3 are respectively formed to be thinner than the second thickness L2.

[0095] In one embodiment, the sum of the first thickness L1 and the third thickness L3 may be thinner than the second thickness L2.

[0096] In various embodiments, in step 304, the photoresist layer 220 may be removed after the third coating layer 130 is formed.

[0097] Figure 4 A graph showing the shear stress Ts at the time of failure of the probe tip 100 according to various embodiments of the present disclosure.

[0098] In various embodiments, Figure 4 The horizontal axis of the graph shown indicates the shear stress Ts value at the time point when the probe tip breaks at 100°. Figure 4The vertical axis of the graph shown represents the probability density function value of the shear stress Ts at the time point when the probe tip breaks at 100°.

[0099] In various embodiments, during the contact between the probe tip 100 and the object being tested (not shown), the probe tip 100 may move along the thickness direction of the probe tip 100 (e.g., the z-axis direction, see reference). Figure 1 ), the length direction of the probe tip 100 (e.g., the x-axis direction, refer to...) Figure 1 ) and / or the width direction of the probe tip 100 (e.g., the y-axis direction, see reference) Figure 2 ) The transmission of force received from the outside.

[0100] In various embodiments, the shear stress Ts may refer to the stress generated substantially along the length direction of the probe tip 100 (e.g., the x-axis direction, see reference 100). Figure 1 The force transmitted vertically results in stress at the probe tip 100. When a shear stress Ts above a predetermined reference occurs at the probe tip 100, the probe tip 100 may break.

[0101] In various embodiments, the strength of the probe tip 100 can be measured by the shear stress Ts value at the time of probe tip 100 failure. The stronger the probe tip 100, the more force it can withstand, and thus the greater the shear stress Ts value of the probe tip 100 at the time of failure.

[0102] Figures 401 and 401a can be graphs showing the distribution of shear stress Ts values ​​measured multiple times at the time of probe tip breakage according to the prior art. For example, in Figure 4 In the charts shown, Chart 401 may refer to the probability density function value of the shear stress Ts at the time of probe tip failure according to the prior art. Chart 401a may refer to the histogram corresponding to the probability density function value of the shear stress Ts at the probe tip according to the prior art.

[0103] Figures 402 and 402a can be graphs showing the distribution of shear stress Ts values ​​measured multiple times at the time of probe tip 100 failure according to various embodiments of the present disclosure. For example, in Figure 4 In the diagrams shown, diagram 402 may refer to the probability density function value of the shear stress Ts at the time of failure of the probe tip 100 according to various embodiments of the present disclosure. Diagram 402a may refer to a histogram corresponding to the probability density function value of the shear stress Ts of the probe tip 100 according to various embodiments of the present disclosure.

[0104] Reference Figure 4The shear stress Ts at the time of probe tip 100 failure according to various embodiments of the present disclosure, as shown in Figure 402, can be larger than the shear stress Ts at the time of probe tip failure according to the prior art, as shown in Figure 401. For example, Figure 402 can be formed at a moving position with a larger shear stress Ts value at the same vertical axis position than Figure 401. Figure 402a can also be formed at a moving position with a larger shear stress Ts value at the same vertical axis position than Figure 401a.

[0105] Referring to Tables 401 and 402, the shear stress Ts at the time of failure of the probe tip 100 according to various embodiments of the present disclosure is greater than that of the probe tip according to the prior art. Therefore, the strength of the probe tip 100 according to the embodiments of the present disclosure can be greater than that of the probe tip according to the prior art.

[0106] In various embodiments, the shear stress Ts at the time of failure of the probe tip 100 according to various embodiments of the present disclosure can be approximately 80% higher than the shear stress Ts at the time of failure of the probe tip 100 according to the prior art. For example, if the shear stress Ts that the probe tip 100 can withstand according to the prior art is 100, then the shear stress Ts that the probe tip 100 can withstand according to various embodiments of the present disclosure is approximately 180.

Claims

1. A method for preparing a probe tip, wherein, include: The steps involved in forming the basal layer; The step of forming a photoresist layer, wherein the photoresist layer includes an opening on one side of the substrate layer; The step of forming a first coating layer, wherein the first coating layer has a first thickness in at least a portion of the opening in the photoresist layer along a direction perpendicular to one side of the substrate layer, and includes a first metal; The step of forming a second coating layer, wherein the second coating layer has a second thickness on one side of the first coating layer in a direction perpendicular to one side of the first coating layer, and comprises a second metal of a different material from the first metal; and The step of forming a third coating, wherein the third coating has a third thickness on one side of the second coating, in a direction perpendicular to one side of the second coating, and includes the first metal, The base layer comprises: a first base layer supporting a portion of the first plating and including the first metal; and a second base layer supporting another portion of the first plating and including the second metal. The second coating is formed to have a higher hardness than both the first and third coatings. The second thickness is formed to be thicker than the first thickness and the third thickness. The first coating, the second coating, and the third coating are stacked in a direction away from one side of the substrate.

2. The method for preparing the probe tip according to claim 1, wherein, The first thickness of the first coating is formed to be the same as the third thickness of the third coating. The hardness of the first coating is made to be the same as that of the third coating.

3. The method for preparing the probe tip according to claim 1, wherein, The first thickness of the first coating and the third thickness of the third coating are formed differently from each other.

4. The method for preparing the probe tip according to claim 1, wherein, The hardness of the first coating and the third coating is 520 Hv~720 Hv. The hardness of the second coating is 900Hv~1000Hv.

5. The method for preparing a probe tip according to claim 1, wherein, The step of forming the second coating includes a surface treatment process, which is used to enhance the adhesion between the first coating and the second coating. The second coating has a second thickness on one side of the first coating, along a direction perpendicular to one side of the first coating, and includes a second metal of a different material from the first metal.

6. The method for preparing a probe tip according to claim 1, wherein, The step of forming the third coating includes a surface treatment process, which is used to enhance the adhesion between the second and third coatings. The third coating has a third thickness on one side of the second coating, in a direction perpendicular to one side of the second coating, and includes the first metal.

7. The method for preparing a probe tip according to claim 1, wherein, The second thickness of the second coating is formed to be thicker than the sum of the first thickness of the first coating and the third thickness of the third coating.

8. The method for preparing a probe tip according to claim 7, wherein, The second thickness of the second coating is formed to be 55% to 95% of the overall thickness of the probe tip.

9. The method for preparing a probe tip according to claim 1, wherein, The first coating, the second coating, and the third coating are formed by electroplating.

10. A probe tip prepared by a method for preparing probe tips, wherein, The method for preparing the probe tip includes: The steps involved in forming the basal layer; The step of forming a photoresist layer, wherein the photoresist layer includes an opening on one side of the substrate layer; The step of forming a first coating layer, wherein the first coating layer has a first thickness in at least a portion of the opening in the photoresist layer along a direction perpendicular to one side of the substrate layer, and includes a first metal; The step of forming a second coating, wherein the second coating has a second thickness on one side of the first coating, in a direction perpendicular to one side of the first coating, and comprises a second metal of a different material from the first metal; and The step of forming a third coating, wherein the third coating has a third thickness on one side of the second coating, in a direction perpendicular to one side of the second coating, and includes the first metal, The substrate layer comprises: a first substrate layer located at one end of the probe tip and including the first metal; and a second substrate layer located at the other end of the probe tip and including the second metal. The second coating is formed to have a higher hardness than both the first and third coatings. The second thickness is formed to be thicker than the first thickness and the third thickness. The first coating, the second coating, and the third coating are stacked in a direction away from one side of the substrate.

11. The probe tip prepared by the method for preparing probe tips according to claim 10, wherein, The first thickness of the first coating is formed to be the same as the third thickness of the third coating. The hardness of the first coating is made to be the same as that of the third coating.

12. The probe tip prepared by the method for preparing probe tips according to claim 10, wherein, The first thickness of the first coating and the third thickness of the third coating are formed differently from each other.

13. The probe tip prepared by the method for preparing probe tips according to claim 10, wherein, The hardness of the first coating and the third coating is 520 Hv~720 Hv. The hardness of the second coating is 900Hv~1000Hv.

14. The probe tip prepared by the method for preparing probe tips according to claim 10, wherein, The second thickness of the second coating is thicker than the sum of the first thickness of the first coating and the third thickness of the third coating.

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