Silicon-silicon oxide-erbium-doped lithium niobate wafer-based optoelectronic fusion integrated chip and method

Abstract

The application discloses a silicon-silicon oxide-erbium-doped lithium niobate wafer-based optoelectronic fusion integrated chip, which comprises a silicon substrate layer, a silicon dioxide isolation layer, an erbium-doped lithium niobate layer, a silicon dioxide buffer layer, a silicon thin film layer, a germanium thin film layer, a silicon nitride thin film layer and a silicon dioxide cladding layer. Through wafer bonding, waveguide etching, thin film deposition, heteroepitaxy and metal through hole integration methods, monolithic integration of laser, electro-optic modulator, passive photonic device, detector and other optoelectronic devices, driving circuit and amplifier circuit and other electronic circuits can be realized, the length of electrical interconnection is reduced, the system volume, power consumption, parasitic parameters and packaging cost are greatly reduced. The silicon nitride thin film is deposited at a lower temperature by using a plasma enhanced chemical vapor deposition (PECVD) technology, which is compatible with the CMOS process, and a higher-performance hetero-optoelectronic fusion chip is realized.

Description

Technical Field

[0001] This invention belongs to the field of photonic heterogeneous integration technology, and in particular, it relates to an optoelectronic fusion integrated chip and method based on silicon-silicon oxide-lithium erbium doped niobate heterostructure wafers. Technical Background

[0002] Traditional microelectronics technology faces bottlenecks in power consumption and speed. To meet the ever-increasing demands of current applications, the advantages of both photonics and electronics can be combined to achieve the fusion of optical and microwave signals, addressing the significant challenges facing the integrated circuit industry. The key to optoelectronic fusion integrated circuits lies in the coupling of two different physical fields, electricity and light. By controlling the dynamic movement and mutual regulation of photons and electrons through the connections between devices, rapid, stable, and efficient processing of optoelectronic signals can be achieved. In recent years, heterogeneous integration technology has gradually attracted research attention both domestically and internationally. This technology can leverage the advantages of various materials and is an effective technical approach to realizing large-scale, multifunctional photonic integrated chips.

[0003] Silicon and silicon nitride offer advantages such as low cost, low loss, and CMOS-compatible processes, making them suitable for fabricating high-density passive photonic devices. They are the most mature materials for realizing large-scale, multifunctional photonic integrated chips. However, because silicon is an indirect bandgap semiconductor, it cannot be used to fabricate lasers, amplifiers, and other devices. Generally, III-V materials can be used to fabricate lasers and amplifiers, but these are difficult to process, expensive, and have high waveguide losses. Furthermore, integrating III-V materials with silicon-based materials often presents challenges. Erbium-doped lithium niobate can conduct large signals, making it an effective way to achieve on-chip optical amplification. It can replace III-V materials in fabricating active photonic devices such as light sources and amplifiers, while also leveraging the excellent electro-optic properties of lithium niobate, making it suitable for fabricating low-drive-voltage, high-bandwidth electro-optic modulators. Therefore, heterogeneous optoelectronic fusion integration technology based on erbium-doped lithium niobate, silicon nitride, silicon, and germanium materials is an ideal approach to realizing high-performance, multifunctional optoelectronic integrated chips.

[0004] A team from the University of California, Berkeley and MIT has developed a monolithically integrated silicon optical transceiver chip using a 45nm silicon-on-insulator (SOI) CMOS process. This chip achieves monolithic integration of microelectronics (including processors and memory, totaling 70 million transistors) and optoelectronics (including electro-optic modulators, photodetectors, and grating couplers, totaling 850 devices), enabling high-speed optical interconnects between chips (C. Sun, et al., “Single-chip microprocessor that communicates directly using light,” Nature. 528, 534-538, 2015). However, this technology only integrates some electronic and optoelectronic devices and cannot achieve on-chip light source integration. With the increasing maturity of optoelectronic integration and the horizontal expansion of microelectronics technology in the post-Moore's Law era, large-scale monolithic integration of optoelectronics and microelectronics has become an inevitable trend. Therefore, researching low-loss, high-compactness, and small-volume optoelectronic fusion chips to achieve large-scale optoelectronic fusion chips is of great significance. Summary of the Invention

[0005] To overcome the shortcomings of the prior art, this invention proposes an optoelectronic fusion integrated chip based on a silicon-silicon oxide-erbium-doped lithium niobate heterostructure wafer. It employs an erbium-doped lithium niobate wafer, using lithium niobate as the gain medium to replace III-V materials in the formation of the laser and amplifier. This invention uses a monolithic integration method to integrate optoelectronic devices such as lasers, electro-optic modulators, passive photonic devices, and detectors with electronic circuits such as driving circuits and amplifier circuits on the same wafer. This approach leverages the advantages of various materials and utilizes CMOS-compatible processes to achieve monolithic integration, making it suitable for large-scale optoelectronic fusion integration.

[0006] The technical solution of the present invention is as follows:

[0007] The optoelectronic fusion integrated chip based on a silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer includes: a wafer substrate and devices integrated on the wafer substrate. The wafer substrate, from bottom to top, comprises: a silicon substrate layer, a silicon dioxide isolation layer, an erbium-doped lithium niobate layer, a silicon dioxide buffer layer, a silicon thin film layer, a germanium thin film layer, a silicon nitride thin film layer, and a silicon dioxide cladding layer. The silicon dioxide isolation layer is placed between the silicon substrate layer and the erbium-doped lithium niobate layer, the silicon thin film and the silicon nitride thin film layer, and the silicon thin film and the germanium thin film layer as an isolation layer; the silicon dioxide buffer layer is placed between the erbium-doped lithium niobate layer and the silicon thin film layer as a buffer layer, with a feature size of 0-1 micrometer.

[0008] The device includes a silicon-germanium detector, an erbium-doped lithium niobate-silicon electro-optic modulator, an erbium-doped lithium niobate laser, a silicon nitride-silicon nitride interlayer coupler, a silicon nitride passive photonic device, a silicon nitride-silicon interlayer coupler, a silicon passive photonic device, and electronic circuitry. Specifically: the silicon-germanium detector is integrated on the silicon-germanium thin film layer and is composed of a silicon and germanium hybrid waveguide; the erbium-doped lithium niobate-silicon electro-optic modulator is integrated on the silicon thin film layer and is composed of an erbium-doped lithium niobate layer, a silicon dioxide buffer layer, and a silicon thin film forming a hybrid waveguide; the erbium-doped lithium niobate laser is integrated on the erbium-doped lithium niobate-silicon nitride thin film layer and is composed of an erbium-doped lithium niobate layer, a silicon dioxide buffer layer, and a silicon nitride thin film forming a hybrid waveguide; the silicon nitride-silicon nitride interlayer coupler is integrated on the silicon nitride thin film layer and employs... The structure comprises two layers of tapered gradient couplers, with planar linear tapered waveguide structures respectively set in the lower and upper silicon nitride thin film layers; the silicon nitride passive photonic device is integrated on the silicon nitride thin film layer; the silicon nitride-silicon interlayer coupler is integrated on the silicon nitride-silicon thin film layer, employing a two-layer tapered gradient coupler structure, with planar linear tapered waveguide structures respectively set in the silicon thin film layer and the silicon nitride thin film layer; the silicon passive photonic device and electronic circuitry are integrated on the silicon thin film layer.

[0009] The interconnection methods between devices in this invention include optical interconnection and electrical interconnection. The silicon-germanium photodetector is connected to the silicon-based passive photonic device via a silicon waveguide, and is interconnected with the CMOS electronic circuit via a metal wire. The erbium-doped lithium niobate-silicon electro-optic modulator is interconnected with the silicon-based passive photonic device via a silicon waveguide, and is interconnected with the CMOS electronic circuit via a metal wire. The erbium-doped lithium niobate laser is connected to the silicon nitride passive photonic device via a silicon nitride waveguide and a silicon nitride-silicon nitride interlayer coupler. The silicon nitride passive photonic devices are interconnected with each other via silicon nitride waveguides, and are connected to the silicon-based passive photonic device via a silicon-silicon nitride interlayer coupler. The silicon-based passive photonic devices are interconnected with each other via silicon waveguides.

[0010] The gain medium in the erbium-doped lithium niobate laser is erbium-doped lithium niobate, and the silicon nitride waveguide is used to transmit the pump light. The silicon nitride-silicon nitride interlayer coupler separates the signal light from the lower silicon nitride thin film layer to the upper silicon nitride thin film layer, separating it from the pump light of the laser. The silicon nitride passive photonic device includes: a directional coupler or multimode interferometer, a wavelength division multiplexer, a Mach-Zehnder interferometer, and a delay line. The silicon nitride-silicon interlayer coupler conducts the signal light from the silicon nitride thin film layer to the silicon thin film layer. The silicon passive photonic device includes: a directional coupler or multimode interferometer, a wavelength division multiplexer, a Mach-Zehnder interferometer, and a microring. The electronic circuit includes: an amplifier circuit, a driver circuit, an analog-to-digital converter circuit, a digital-to-analog converter circuit, and a digital processing circuit.

[0011] The integration method for an optoelectronic fusion integrated chip based on a silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer includes wafer bonding, waveguide etching, thin film deposition, heteroepitaxial growth, doping technology, metal deposition technology, and metal vias. The wafer bonding process sequentially bonds an erbium-doped lithium niobate layer and a silicon thin film layer. A silicon-germanium detector is formed on the silicon thin film using molecular beam epitaxy or chemical vapor deposition at a low temperature (approximately 485°C). The waveguide etching process forms a hybrid waveguide with the erbium-doped lithium niobate layer, silicon dioxide buffer layer, and silicon thin film layer to form an erbium-doped lithium niobate-silicon electro-optic modulator. The erbium-doped lithium niobate layer, silicon dioxide buffer layer, and silicon nitride thin film form a laser. Plasma-enhanced chemical vapor deposition (PECVD) is used to obtain a silicon nitride thin film layer on the silicon thin film. With a process temperature below 200℃, the waveguide etching technology described above is used to obtain silicon nitride-silicon nitride interlayer couplers, silicon-silicon nitride interlayer couplers, and silicon nitride passive photonic devices, including directional couplers, multimode interferometers, wavelength division multiplexers, Mach-Zehnder interferometers, microrings, and delay lines. The etching technology described above is also used to obtain silicon-based passive photonic devices on a silicon thin film layer, including directional couplers, multimode interferometers, wavelength division multiplexers, Mach-Zehnder interferometers, and microrings. Furthermore, the doping technology, metal deposition technology, metal vias, and etching technology described above are used to form CMOS electronic circuits on a silicon thin film.

[0012] The technical effects of this invention are as follows:

[0013] 1. This invention proposes an optoelectronic fusion integrated chip and integration method based on silicon-silicon oxide-lithium erbium niobate heterostructure wafers. It integrates optoelectronic devices such as silicon-germanium detectors, lithium erbium niobate-silicon electro-optic modulators, lithium erbium niobate lasers, silicon nitride passive photonic devices, and silicon-based passive photonic devices with electronic circuits such as driving circuits and amplifier circuits on the same wafer, realizing a monolithic microelectronic and optoelectronic chip. This conforms to the current trend of "optoelectronic fusion" and is conducive to achieving higher performance chips.

[0014] 2. This invention uses erbium-doped lithium niobate wafers to replace III-V wafers in forming lasers, modulators, and amplifiers, achieving on-chip light source integration. This solves problems such as lattice mismatch, wafer size mismatch, high loss, high cost, and complex processing when bonding III-V wafers to silicon thin films. At the same time, it leverages the excellent electro-optic properties of lithium niobate to effectively improve parameters such as electro-optic modulation efficiency and system bandwidth.

[0015] 3. The present invention provides a silicon dioxide buffer layer between the silicon thin film and the erbium-doped lithium niobate wafer, which improves the bonding force between different wafers, increases adhesion, makes the chip performance more stable in subsequent processing, and greatly improves the chip yield.

[0016] 4. This invention uses silicon nitride waveguides to transmit pump light, avoiding the two-photon effect of silicon waveguides when transmitting high-power light, and leveraging the low-loss characteristics of silicon nitride waveguides; this invention uses plasma-enhanced chemical vapor deposition (PECVD) technology to deposit silicon nitride thin films at lower temperatures, making it compatible with CMOS processes.

[0017] 5. In forming the electro-optic modulator, the present invention uses a thin silicon waveguide to increase the energy ratio of light in the erbium-doped lithium niobate layer, giving full play to the advantages of the high refractive index of silicon waveguide and the large electro-optic coefficient of lithium niobate waveguide, thereby achieving high electro-optic modulation efficiency.

[0018] 6. This invention uses a monolithic integration method, which reduces the length of optoelectronic interconnects and significantly reduces system size, power consumption, parasitic parameters, and packaging costs;

[0019] 7. This invention uses a front-end process to bond erbium-doped lithium niobate wafers and silicon thin films, eliminating the need to etch lithium niobate. Devices are formed by etching silicon dioxide and silicon, avoiding contaminants caused by etching lithium niobate and ensuring compatibility with silicon photonics processes. Attached Figure Description

[0020] Figure 1 This is a schematic cross-sectional view of the heterogeneous wafer of the optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium doped niobate heterogeneous wafer according to an embodiment of the present invention.

[0021] Figure 2 This is a cross-sectional view of the optoelectronic fusion integrated chip based on a silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to an embodiment of the present invention:

[0022] (a) is a cross-sectional view of the optoelectronic fusion integrated chip;

[0023] (b) is a three-dimensional cross-sectional view of the silicon nitride-silicon nitride interlayer coupler;

[0024] (c) is a three-dimensional cross-sectional view of the silicon-silicon nitride interlayer coupler. Detailed Implementation

[0025] The present invention will now be described in detail with reference to the accompanying drawings and embodiments, providing detailed implementation methods and structures. However, the scope of protection of the present invention is not limited to the following embodiments.

[0026] According to an embodiment of the present invention.

[0027] like Figure 1The cross-sectional view of the silicon-silicon oxide-erbium-doped lithium niobate heterostructure wafer of the present invention is shown in the figure. From bottom to top, the layers are: silicon substrate layer 1, silicon dioxide isolation layer 2, erbium-doped lithium niobate layer 3, silicon dioxide buffer layer 4, silicon thin film layer 5, germanium thin film layer 6, silicon nitride thin film layer 7, and silicon dioxide cladding layer 2. The silicon dioxide isolation layer 2 is placed between the silicon substrate layer 1 and the erbium-doped lithium niobate layer 3, the silicon thin film layer 5 and the silicon nitride thin film layer 7, and the silicon thin film layer 5 and the germanium thin film layer 6 as an isolation layer; the silicon dioxide buffer layer 4 is placed between the erbium-doped lithium niobate layer 3 and the silicon thin film layer 5 as a buffer layer, and its feature size is 0-1 micrometer.

[0028] like Figure 2 The figure shown is a cross-sectional view of the optoelectronic fusion integrated chip of the present invention. Figure 2 (a) is a cross-sectional view of the optoelectronic monolithic integrated system. The optoelectronic devices include a silicon-germanium detector 8, an erbium-doped lithium niobate-silicon electro-optic modulator 9, an erbium-doped lithium niobate laser 10, a silicon nitride-silicon nitride interlayer coupler 11, a silicon nitride passive photonic device 12, a silicon nitride-silicon interlayer coupler 13, a silicon passive photonic device 14, and an electronic circuit 15. Wherein: the silicon-germanium detector 8 is integrated on the silicon-germanium thin film layer and is composed of a silicon and germanium hybrid waveguide; the erbium-doped lithium niobate-silicon electro-optic modulator 9 is integrated on the silicon thin film layer and is composed of a erbium-doped lithium niobate layer, a silicon dioxide buffer layer, and a silicon thin film forming a hybrid waveguide; the erbium-doped lithium niobate laser 10 is integrated on the erbium-doped lithium niobate layer-silicon nitride thin film layer and is composed of a erbium-doped lithium niobate layer, a silicon dioxide buffer layer, and a silicon nitride thin film forming a hybrid waveguide; the erbium-doped lithium niobate laser 11 is integrated on the silicon nitride thin film layer and adopts a two-layer tapered gradient coupler structure, with planar linear tapered tapered waveguide structures respectively set in the lower and upper silicon nitride thin film layers, such as... Figure 2 As shown in (a); the silicon nitride passive photonic device 12 is integrated on the silicon nitride thin film layer; the silicon nitride-silicon interlayer coupler 13 is integrated on the silicon nitride thin film layer-silicon thin film layer, adopting a two-layer tapered tapered coupler structure, with planar linear tapered tapered waveguide structures respectively set in the silicon thin film layer and the silicon nitride thin film layer, as shown in (a). Figure 2 As shown in (b), the silicon passive photonic device 14 and electronic circuit 15 are integrated on the silicon thin film layer.

[0029] The interconnection methods between devices in this invention include optical interconnection and electrical interconnection. The silicon-germanium photodetector 7 is connected to the silicon-based passive photonic device 13 via a silicon waveguide, and is interconnected with the CMOS electronic circuit 15 via a metal wire. The erbium-doped lithium niobate-silicon electro-optic modulator 9 is interconnected to the silicon-based passive photonic device 13 via a silicon waveguide, and is interconnected with the CMOS electronic circuit 15 via a metal wire. The erbium-doped lithium niobate laser 10 is connected to the silicon nitride passive photonic device 12 via a silicon nitride waveguide and an erbium-doped lithium niobate laser 11. The silicon nitride passive photonic devices 12 are interconnected with each other via silicon nitride waveguides, and are connected to the silicon-based passive photonic device 13 via a silicon-silicon nitride interlayer coupler 12. The silicon-based passive photonic devices 13 are interconnected with each other via silicon waveguides.

[0030] The integration method of this invention includes wafer bonding, waveguide etching, thin film deposition, heteroepitaxial growth, doping technology, metal deposition technology, and metal vias. The wafer bonding process sequentially bonds an erbium-doped lithium niobate layer 3 and a silicon thin film layer 5. A silicon-germanium detector 8 is formed on the silicon thin film layer 5 using molecular beam epitaxy or chemical vapor deposition, grown at a low temperature of approximately 485°C. Using the waveguide etching technology, the erbium-doped lithium niobate layer 3, the silicon dioxide buffer layer 4, and the silicon thin film layer 5 form a hybrid waveguide constituting an erbium-doped lithium niobate-silicon electro-optic modulator 9. The erbium-doped lithium niobate layer 3, the silicon dioxide buffer layer 4, and the silicon nitride thin film 6 form a laser 9. Using the plasma-enhanced chemical vapor deposition (PECVD) technology, silicon nitride is obtained on the silicon thin film. Thin film layer 7, with a process temperature below 200℃, uses the waveguide etching technology to obtain an erbium-doped lithium niobate laser 11, a silicon-silicon nitride interlayer coupler 12, and a silicon nitride passive photonic device 12, including a directional coupler, a multimode interferometer, a wavelength division multiplexer, a Mach-Zehnder interferometer, a microring, and a delay line; using the etching technology, a silicon-based passive photonic device 13 is obtained on the silicon thin film layer, including a directional coupler, a multimode interferometer, a wavelength division multiplexer, a Mach-Zehnder interferometer, and a microring; using the doping technology, metal deposition technology, metal vias, etching technology, etc., a CMOS electronic circuit 15 is formed on the silicon thin film.

Claims

1. A photoelectric fusion integrated chip based on a silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer, characterized in that, include: Wafer substrates and devices integrated on wafer substrates; The wafer substrate consists of, from bottom to top, a silicon substrate layer (1), an erbium-doped lithium niobate layer (3), a silicon dioxide buffer layer (4), and a silicon thin film layer (5). A germanium thin film layer (6) is formed on a portion of the surface of the silicon thin film layer (5) by epitaxial growth or chemical vapor deposition. A silicon nitride thin film layer (7) is formed on the other portions of the surface of the silicon thin film layer (5) by chemical vapor deposition. A silicon dioxide isolation layer (2) is provided between the silicon substrate layer (1) and the erbium-doped lithium niobate layer (3), between the silicon thin film layer (5) and the silicon nitride thin film layer (7), and between the silicon thin film layer (5) and the germanium thin film layer (6) as an isolation layer; The silica buffer layer (4) serves as a buffer; The devices include silicon-germanium detectors, lithium erbium-doped niobate-silicon electro-optic modulators, lithium erbium-doped niobate lasers, silicon nitride-silicon nitride interlayer couplers, silicon nitride passive photonic devices, silicon nitride-silicon interlayer couplers, silicon passive photonic devices, and electronic circuits. The silicon-germanium detector is integrated on the silicon-germanium thin film layer and is composed of a silicon and germanium hybrid waveguide. The erbium-doped lithium niobate-silicon electro-optic modulator is integrated on the silicon thin film layer and is composed of a hybrid waveguide formed by the erbium-doped lithium niobate layer, the silicon dioxide buffer layer, and the silicon thin film. The erbium-doped lithium niobate laser is integrated on the erbium-doped lithium niobate layer-silicon nitride thin film layer, and is composed of a hybrid waveguide formed by the erbium-doped lithium niobate layer, the silicon dioxide buffer layer and the silicon nitride thin film; The silicon nitride-silicon nitride interlayer coupler is integrated on a silicon nitride thin film layer and adopts a two-layer tapered tapered coupler structure, with planar linear tapered tapered waveguide structures set in the lower silicon nitride thin film layer and the upper silicon nitride thin film layer respectively. The silicon nitride passive photonic device is integrated on the silicon nitride thin film layer; The silicon nitride-silicon interlayer coupler is integrated on the silicon nitride thin film layer-silicon thin film layer and adopts a two-layer tapered tapered coupler structure, with planar linear tapered tapered waveguide structures set in the silicon thin film layer and the silicon nitride thin film layer respectively. The silicon passive photonic device and electronic circuit are integrated on the silicon thin film layer; The silicon-germanium photodetector is connected to the silicon passive photonic device via a silicon waveguide and is interconnected with the CMOS electronic circuit via a metal wire. The erbium-doped lithium niobate-silicon electro-optic modulator is interconnected with the silicon passive photonic device via a silicon waveguide and with the CMOS electronic circuit via a metal wire; The erbium-doped lithium niobate laser is connected to the silicon nitride passive photonic device via a silicon nitride waveguide and a silicon nitride-silicon nitride interlayer coupler. The silicon nitride passive photonic devices are interconnected with each other via silicon nitride waveguides and connected to silicon passive photonic devices via silicon-silicon nitride interlayer couplers; the silicon passive photonic devices are interconnected with each other via silicon waveguides.

2. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The thickness of the silicon dioxide buffer layer (4) is 0-1 micrometer.

3. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The gain medium in the erbium-doped lithium niobate laser is erbium-doped lithium niobate, and the silicon nitride waveguide is used to transmit the pump light.

4. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The silicon nitride-silicon nitride interlayer coupler separates the signal light from the lower silicon nitride thin film layer to the upper silicon nitride thin film layer, thus separating it from the pump light of the laser.

5. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The silicon nitride passive photonic devices include: directional couplers or multimode interferometers, wavelength division multiplexers, Mach-Zehnder interferometers, and delay lines.

6. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The silicon nitride-silicon interlayer coupler transmits signal light from the silicon nitride thin film layer to the silicon thin film layer.

7. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The silicon passive photonic devices include: directional couplers or multimode interferometers, wavelength division multiplexers, Mach-Zehnder interferometers, and microrings.

8. The optoelectronic fusion integrated chip based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafer according to claim 1, characterized in that, The electronic circuit includes: an amplifier circuit, a driver circuit, an analog-to-digital converter circuit, a digital-to-analog converter circuit, and a digital processing circuit.

9. A method for optoelectronic fusion integration based on silicon-silicon oxide-lithium erbium-doped niobate heterostructure wafers, characterized in that, Includes the following steps: The erbium-doped lithium niobate layer and the silicon thin film layer are sequentially bonded using the aforementioned wafer bonding method; Silicon-germanium detectors are formed on silicon thin films using molecular beam epitaxy or chemical vapor deposition, with low-temperature growth and a process temperature of approximately 485°C. Using waveguide etching technology, a hybrid waveguide is formed by an erbium-doped lithium niobate layer, a silicon dioxide buffer layer, and a silicon thin film layer to form an erbium-doped lithium niobate-silicon electro-optic modulator, and the erbium-doped lithium niobate layer, the silicon dioxide buffer layer, and the silicon nitride thin film to form a laser. A silicon nitride thin film layer is obtained on the silicon thin film using plasma-enhanced chemical vapor deposition technology at a process temperature below 200°C. Waveguide etching technology was used to obtain silicon nitride-silicon nitride interlayer couplers, silicon-silicon nitride interlayer couplers, and silicon nitride passive photonic devices; Silicon passive photonic devices were obtained on a silicon thin film layer using etching technology; CMOS electronic circuits are formed on silicon thin films using doping, metal deposition, metal vias, and etching techniques.

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