A film thickness measuring device and method

Abstract

This application discloses a film thickness measurement device and method for measuring the thickness of a photosensitive active layer in a photosensitive active component under test. The photosensitive active layer is attached to a substrate. The film thickness measurement device includes an image acquisition component, a filtering component, and a light source. The light source emits detection light, and the filtering component is located on the light-emitting side of the light source and is used to adjust the wavelength of the detection light. The photosensitive active component under test is located on the light-emitting side of the filtering component, and the image acquisition component is located on the light-emitting side of the photosensitive active component under test and is used to acquire images of the photosensitive active layer. This application uses the image acquisition component to perform photographic measurement of the photosensitive active layer, enabling measurement over a large area. It can measure not only the total thickness distribution of the mixed components but also the individual thickness distribution of each component in the mixed components, allowing measurement without damaging the film, reducing measurement costs and improving measurement efficiency.

Description

Technical Field

[0001] This application relates to the field of thin film thickness measurement technology, and in particular to a film thickness measuring device and method. Background Technology

[0002] Organic photovoltaic (PV) cells have attracted widespread attention due to their advantages such as solution-based manufacturing, semi-transparency, and suitability for low-cost roll-to-roll printing. Research shows that the photoelectric conversion efficiency of PV cells is closely related to the thickness of their photosensitive active layer. The optimal thickness of the photosensitive layer in PV cells is typically between 70-120 nm, and the more uniform the film thickness across the entire photosensitive active layer area, the better the cell performance. However, in the solution-based preparation of the photosensitive active layer, uneven solution flow in various directions and differences in solvent evaporation rates often lead to uneven film thickness distribution. Especially for layer-by-layer deposition of the active layer, where a donor (or acceptor) film is typically deposited on top of the donor (or acceptor) film, the deposition of the second layer can dissolve or erode the first film, resulting in uneven overall active layer thickness.

[0003] In existing technologies, the commonly used methods for measuring the thickness of films in the hundreds of nanometers are profilometry and atomic force microscopy. These methods are costly and can only measure the thickness of a single line or point at a time, resulting in low measurement efficiency. Furthermore, both profilometry and atomic force microscopy require scratching a line down to the bottom of the film, damaging it and rendering it unusable. Summary of the Invention

[0004] In view of this, this application provides a film thickness measuring device and method to solve the problems of high measurement cost and low measurement efficiency caused by the need to damage the film during measurement and the fact that the film thickness can only be measured at one line or one point at a time.

[0005] This application discloses a film thickness measurement device for measuring the thickness of a photosensitive active layer in a photosensitive active component under test. The photosensitive active layer is connected to a substrate. The film thickness measurement device includes an image acquisition component, a filtering component, and a light source. The light source emits detection light. The filtering component is disposed on the light-emitting side of the light source and is used to adjust the wavelength of the detection light. The photosensitive active component under test is located on the light-emitting side of the filtering component. The image acquisition component is located on the light-emitting side of the photosensitive active component under test and is used to acquire images of the photosensitive active layer.

[0006] Optionally, the image acquisition component includes a monochrome camera.

[0007] Optionally, the light source includes a monochromatic light source.

[0008] Optionally, the light source includes a tungsten lamp.

[0009] Optionally, the filtering component includes a bandpass filter.

[0010] Optionally, the substrate includes a first glass substrate layer, a first conductive layer, and a first transport layer, wherein the first substrate layer, the first conductive layer, the first transport layer, and the photosensitive active layer are connected in sequence.

[0011] This application also proposes a method for measuring film thickness, including:

[0012] A predetermined number of reference photosensitive active components are selected from all photosensitive active components of different thicknesses, and the thickness reference value of the image of the reference photosensitive active components is measured.

[0013] The image acquisition component of the film thickness measurement device acquires an image of the reference photosensitive active component under test, and obtains the reference grayscale value of the image of the reference photosensitive active component under test.

[0014] Based on the thickness reference value and the reference grayscale value of the image, the functional relationship between the thickness value of the photosensitive active component under test and the grayscale value of the image is obtained;

[0015] Obtain the grayscale values ​​of all the images of the photosensitive active components to be tested, and obtain the thickness values ​​of all the photosensitive active components to be tested according to the function relationship.

[0016] Optionally, the step of selecting a preset number of reference photosensitive active components from all photosensitive active components of different thicknesses and measuring the thickness reference value of the reference photosensitive active components specifically includes:

[0017] A series of photosensitive active components of different thicknesses were fabricated using an active layer solution.

[0018] A preset number of photosensitive active components of different thicknesses are selected as thickness references. The thickness of the thickness references is measured using a film thickness measuring instrument to obtain the thickness reference values ​​of the preset number of photosensitive active components.

[0019] Optionally, the step of acquiring an image of the reference photosensitive active component under test through the image acquisition component of the film thickness measurement device, and obtaining the image reference grayscale value of the reference photosensitive active component under test, specifically includes:

[0020] Based on the characteristics of the photosensitive active component under test, a filter component of the corresponding wavelength is selected;

[0021] Each of the photosensitive active components to be tested is placed between the image acquisition component and the filter component, such that the light emitted from the light source is on the same horizontal line as the filter component, the photosensitive active component to be tested, and the image acquisition component;

[0022] Images of the photosensitive active component under test are acquired using the image acquisition component.

[0023] Optionally, selecting a filter component with a corresponding wavelength based on the characteristics of the photosensitive active component under test specifically includes:

[0024] When the thin film of the photosensitive active component to be tested is a pure donor or a pure acceptor, the filter component with the first wavelength is selected;

[0025] Wherein, the first wavelength is the wavelength corresponding to the absorption peak of the thin film;

[0026] When the thin film of the photosensitive active component under test is a bulk heterojunction structure or a quasi-planar heterojunction structure, the filter component with the second wavelength is selected;

[0027] The second wavelength is the wavelength at the intersection of the absorption spectra of the pure donor and pure acceptor films.

[0028] The beneficial effects of this application are as follows: Firstly, unlike existing technologies, this application improves the measurability of the photosensitive active layer by connecting the photosensitive active layer of the thin film to the substrate to form the photosensitive active component under test. Secondly, by setting up a light source and a filter component, the light emitted from the light source is irradiated onto the filter component and then onto the photosensitive active component under test. This allows the photosensitive active layer to absorb the spectrum; the thicker the photosensitive active layer, the more light it absorbs, and the less light enters the image acquisition component, resulting in a darker image (i.e., a smaller grayscale value). This method offers advantages such as simplicity, speed, and the ability to measure large areas. Furthermore, this application can measure not only the total thickness of the active layer in a quasi-planar heterojunction but also the thickness distribution of the donor and acceptor layers within the active layer. Additionally, this application uses an image acquisition component to photograph and measure the photosensitive active component under test. The measurement results are accurate, and the film does not need to be scratched, making it a non-destructive measurement method. Device fabrication can continue after the film thickness measurement is completed, resulting in high measurement efficiency. It is also suitable for real-time film thickness measurement and is compatible with automated production methods.

[0029] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this application. Attached Figure Description

[0030] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of the photosensitive active component to be tested in this application;

[0032] Figure 2 This is a schematic diagram of the film thickness measuring device of this application;

[0033] Figure 3 This is a flowchart of the film thickness measurement method of this application;

[0034] Figure 4 yes Figure 3 A detailed flowchart of step S100;

[0035] Figure 5 yes Figure 3 The detailed flowchart of step S200;

[0036] Figure 6 yes Figure 5 The detailed flowchart of step S210;

[0037] Figure 7 This is a fitting graph of the film thickness value measured by the pure donor under 570nm quasi-monochromatic light and the image gray value;

[0038] Figure 8 This is a fitting graph of the film thickness value measured under 810nm quasi-monochromatic light and the image gray value of the pure receptor;

[0039] Figure 9 This is a fitting graph of film thickness values ​​measured under 645nm quasi-monochromatic light for pure donors and pure acceptors and image grayscale values.

[0040] Figure 10 This is a comparison diagram of the film thickness measurement method of this application and the film thickness value measured by atomic force microscopy;

[0041] Figure 11 This is a diagram showing the film thickness distribution of the Q-PHJ film measured by the film thickness measurement method of this application, and the film thickness distribution of pure donors and pure acceptors in the Q-PHJ film.

[0042] In the figure, the following labels are used: 10, image acquisition component; 20, filtering component; 30, light source; 40, photosensitive active layer; 50, substrate; 51, first substrate layer; 52, first conductive layer; 53, first transmission layer; 60, photosensitive active component under test. Detailed Implementation

[0043] To enable those skilled in the art to better understand the technical solutions of this application, the film thickness measuring device and method provided in this application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It is understood that the described embodiments are merely some embodiments of this application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0044] The terms "first," "second," etc., used in this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or apparatuses.

[0045] Besides the methods mentioned in the background section, such as profilometers, ellipsometers, and atomic force microscopes, which measure the thickness of films at the hundred-nanometer level, there is currently no effective method to measure the overall thickness of the active layer over a large area. Especially for layer-by-layer deposited active layers, where a portion of the two layers is fused together, there is currently no way to measure the individual thicknesses of the fused layers. However, the thickness distribution of each material has a significant impact on the performance of photovoltaic devices. Measuring the thickness distribution of both the donor and acceptor materials would be crucial for predicting and analyzing photovoltaic device performance.

[0046] This application provides a film thickness measuring device and method to solve the problems of high measurement cost and low measurement efficiency caused by the need to damage the film during measurement and the fact that the film thickness can only be measured at one line or one point at a time.

[0047] Please see Figures 1 to 2 , Figure 1 This is a schematic diagram of the structure of the photosensitive active component to be tested in this application; Figure 2 This is a schematic diagram of the film thickness measuring device of this application.

[0048] In one embodiment, such as Figures 1 to 2 As shown, the film thickness measuring device is used to measure the thickness of the photosensitive active layer 40 in the photosensitive active component 60 under test. The photosensitive active layer 40 is connected to the substrate 50. The film thickness measuring device includes an image acquisition component 10, a filtering component 20, and a light source 30. The light source 30 emits detection light, the filtering component 20 is disposed on the light-emitting side of the light source 30, and is used to adjust the wavelength of the detection light. The photosensitive active component 60 under test is located on the light-emitting side of the filtering component 20, and the image acquisition component 10 is located on the light-emitting side of the photosensitive active component 60 under test, and is used to acquire images of the photosensitive active layer 40.

[0049] In the embodiments of this application, a photosensitive active layer 40 is connected to a substrate 50 to form a photosensitive active component 60 to be tested. Light is emitted from a light source 30 and incident on a filter component 20. The filter component 20 illuminates one side of the photosensitive active component 60 to be tested, causing the photosensitive active layer 40 to absorb the spectrum. An image acquisition component 10 takes a picture of the photosensitive active component 60 from the other side. The thicker the photosensitive active layer 40, the more light it absorbs and the less light passes through it. As a result, less light enters the image acquisition component 10, and the darker the picture captured by the image acquisition component 10 is, the smaller the gray value. The thickness of the photosensitive active layer 40 is determined by the gray value, which has the advantages of being simple, fast, capable of large-area measurement, and capable of layer-by-layer measurement. Secondly, this application uses a film thickness measurement device to photograph and measure the photosensitive active component 60 under test. The measurement results are accurate and do not require tearing the film, making it a non-destructive measurement method. Device fabrication can continue after the film thickness measurement is completed, resulting in high measurement efficiency. It is also suitable for real-time film thickness measurement and is compatible with automated production methods. Furthermore, this application connects the photosensitive active layer 40 of the film to the substrate 50 to form the photosensitive active component 60 under test, making the previously difficult-to-measure film measurable and improving the production quality of the battery structure.

[0050] In some embodiments, the image acquisition component 10 includes a monochrome camera, which can directly capture grayscale images of the photosensitive active layer 40 film, facilitating subsequent grayscale value calculation. Optionally, the image acquisition component 10 can also be set to other cameras, selecting either a monochrome mode or a color camera, and the captured images can be converted to grayscale.

[0051] Optionally, the magnification of the black and white camera can be adjusted. By changing the magnification of the black and white camera lens, the thickness measurement range of the photosensitive active layer 40 film can be flexibly adjusted to make the film thickness measurement device more applicable.

[0052] Optionally, the image acquisition component 10 can be connected to a computer, which can transmit the images captured by the image acquisition component 10 to the computer in real time. The correspondence between the film thickness of the photosensitive active layer 40 and the image grayscale value can be obtained by programming computer software (such as Matlab, C++, Fortran, etc.). The subsequent measurement of the thickness of the photosensitive active layer 40 film is simple and convenient, which greatly improves the measurement efficiency.

[0053] In some embodiments, the light source 30 includes a monochromatic light source 30. A quasi-monochromatic light can be selected as the incident light based on the specific absorption spectrum of the active layer material, illuminating the photosensitive active layer 40. A monochrome camera is used to photograph the photosensitive active layer 40, and the thickness of the photosensitive active layer 40 film can then be quantitatively calculated based on the brightness, i.e., the grayscale value, of the image. Optionally, the light source 30 includes a tungsten lamp light source 30, which has advantages such as excellent light focusing, high luminous efficiency, stable color temperature, almost no light decay, and long lifespan.

[0054] In some embodiments, the filtering component 20 may include a bandpass filter, and multiple bandpass filters may be configured. The multiple bandpass filters may be configured to be different colors. When the corresponding color is required, the filter can be rotated directly to the corresponding color bandpass filter, which is simple and convenient.

[0055] In some embodiments, the substrate 50 may include a glass first substrate layer 51, a first conductive layer 52, and a first transport layer 53, which are sequentially connected. The first substrate layer 51, the first conductive layer 52, the first transport layer 53, and the photosensitive active layer 40 can be connected in sequence. The first substrate layer 51 can be a glass substrate, the first conductive layer 52 can be a transparent conductive layer, such as ITO (indium tin oxide), and the first transport layer 53 can be a transport layer, such as PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid). The first substrate layer 51, the first conductive layer 52, and the first transport layer 53 provide support for the photosensitive active layer 40, facilitating its measurement. Furthermore, the sequentially connected first substrate layer 51, the first conductive layer 52, the first transport layer 53, and the photosensitive active layer 40 are also part of the battery structure and can be directly applied to photovoltaic cells.

[0056] Please see Figures 3 to 11 , Figure 3 This is a flowchart of the film thickness measurement method of this application; Figure 4 yes Figure 3 A detailed flowchart of step S100; Figure 5 yes Figure 3 The detailed flowchart of step S200;

[0057] Figure 6 yes Figure 5 The detailed flowchart of step S210; Figure 7 This is a fitting graph of the film thickness value measured by the pure donor under 570nm quasi-monochromatic light and the image gray value; Figure 8 This is a fitting graph of the film thickness value measured under 810nm quasi-monochromatic light and the image gray value of the pure receptor; Figure 9 This is a fitting graph of film thickness values ​​measured under 645nm quasi-monochromatic light for pure donors and pure acceptors and image grayscale values. Figure 10 This is a comparison diagram of the film thickness measurement method of this application and the film thickness value measured by atomic force microscopy; Figure 11This is a diagram showing the film thickness distribution of the Q-PHJ film measured by the film thickness measurement method of this application, and the film thickness distribution of pure donors and pure acceptors in the Q-PHJ film.

[0058] The film thickness measurement method and device proposed in this application can be applied to photosensitive active layers made of three types of active layer solutions: pure donor (PM6) film thickness, pure acceptor (Y6-BO) film thickness, and bulk heterojunction (BHJ) film thickness. The film thickness can be measured using the film thickness measurement method. It can also be used to measure the film thickness of photosensitive active layers made of quasi-planar heterojunction (Q-PHJ) thin films. However, this application is not limited to photosensitive active layers made of the above active layer solutions.

[0059] like Figure 3 As shown, this application also proposes a film thickness measurement method, which includes the following steps:

[0060] Step S100: Select a preset number of reference photosensitive active components from all photosensitive active components of different thicknesses, and measure the thickness reference value of the reference photosensitive active components.

[0061] Step S200: Acquire an image of the reference photosensitive active component under test using the image acquisition component of the film thickness measurement device, and obtain the reference grayscale value of the image of the reference photosensitive active component under test;

[0062] Step S300: Based on the thickness reference value and the reference grayscale value of the image, obtain the functional relationship between the thickness value of the photosensitive active component to be tested and the grayscale value of the image;

[0063] Step S400: Obtain the grayscale values ​​of all the images of the photosensitive active components to be tested, and obtain the thickness values ​​of all the photosensitive active components to be tested according to the function relationship.

[0064] Understandably, the process involves obtaining reference thickness values ​​for a series of photosensitive active components of varying thicknesses, acquiring images of all these components, obtaining the reference thickness values ​​and the corresponding grayscale values ​​of the images, determining the known functional relationship between the reference thickness values ​​and the grayscale values, acquiring the grayscale values ​​of all images, and then using this functional relationship to determine the unknown thickness values ​​of all the photosensitive active components under test. Figure 7 As shown, this is a schematic diagram of the fitting between the film thickness value measured by the pure donor PM6 under 570nm quasi-monochromatic light and the image grayscale value. Figure 8As shown, the film thickness value measured by pure receptor Y6-BO under 810nm quasi-monochromatic light is a schematic diagram of the fitting between the film thickness value and the image gray value. The film thickness measurement method of this application achieves the purpose of non-destructive measurement, that is, there is no need to damage the film. After the measurement is completed, it can still be used to make batteries, saving materials. The preset quantity is set to at least three to make the functional relationship more accurate.

[0065] Alternatively, the thickness of the layer-by-layer deposited film can be obtained by averaging the functional relationship fitted by the pure donor film or the pure acceptor film. The thickness of the layer-by-layer deposited film can be obtained by giving the thickness of the donor layer and the acceptor layer respectively. This is something that other film thickness measurement equipment such as atomic force microscopy cannot achieve, and the measurement results are accurate. The film thickness of the active layer of the photosensitive active component under test is close to the film thickness measurement reference data of atomic force microscopy.

[0066] Specifically, it can be used for Figure 7 and Figure 8 The average of the two fitted curves is obtained. Figure 9 middle y average Then, by repeating step S400 according to the expression of the average curve, the film thickness of the hybrid film (i.e., BHJ film or Q-PHJ film) can be obtained, such as... Figure 10 As shown, comparing the film thickness values ​​measured by quasi-monochromatic light with those measured by atomic force microscopy, the results show that the error of the film thickness value obtained by the quasi-monochromatic light absorption method is within ±10 nm, which can achieve a very good measurement effect.

[0067] In some embodiments, such as Figure 4 As shown, step S100: obtaining a series of thickness reference values ​​for the photosensitive active components under test with different thicknesses specifically includes:

[0068] Step S110: Using an active layer solution, fabricate a series of photosensitive active components of different thicknesses to be tested;

[0069] Step S120: Select a preset number of the photosensitive active components to be tested with different thicknesses as thickness references, and use the thickness of the thickness references to obtain the thickness reference values ​​of the preset number of photosensitive active components to be tested.

[0070] Understandably, an active layer solution is used, which is spin-coated onto a substrate at different speeds to generate a series of photosensitive active components of different thicknesses. At least three photosensitive active components of different thicknesses are selected as thickness references, and the thickness of the thickness references is measured using a film thickness measuring instrument (such as an atomic force microscope) to obtain thickness reference values ​​for at least three photosensitive active components. These reference values ​​are used to predict the relationship between the thickness values ​​and the grayscale values ​​of the images acquired later.

[0071] In some embodiments, such as Figure 5As shown, step S200: acquiring an image of the reference photosensitive active component under test through the image acquisition component of the film thickness measurement device, and obtaining the reference grayscale value of the image of the reference photosensitive active component under test specifically includes:

[0072] Step S210: Select a filter component with the corresponding wavelength according to the characteristics of the photosensitive active component under test;

[0073] Step S220: Place each of the photosensitive active components to be tested between the image acquisition component and the filtering component, such that the light emitted from the light source is on the same horizontal line as the filtering component, the photosensitive active component to be tested, and the image acquisition component;

[0074] Step S230: Use the image acquisition component to acquire images of all the photosensitive active components under test;

[0075] Understandably, based on the characteristics of the photosensitive active component under test, a filter component of the corresponding wavelength is selected. Each photosensitive active component under test is placed between the acquisition component and the filter component, so that the light emitted from the light source, the filter component, the photosensitive active component under test, and the image acquisition component are on the same horizontal line. The light source emits white light, which is filtered by the filter component to form quasi-monochromatic light. The image acquisition component is used to acquire images of all the photosensitive active components under test, thereby obtaining the grayscale values ​​of the images of the photosensitive active components under test.

[0076] In some embodiments, such as Figure 6 As shown, step S210: selecting a filter component of the corresponding wavelength according to the characteristics of the photosensitive active component under test includes:

[0077] Step S211: When the thin film of the photosensitive active component to be tested is a pure donor or a pure acceptor, select the filter component with the first wavelength;

[0078] Wherein, the first wavelength is the wavelength corresponding to the absorption peak of the thin film;

[0079] Step S212: When the thin film of the photosensitive active component under test is a bulk heterojunction structure or a quasi-planar heterojunction structure, select the filter component with the second wavelength;

[0080] The second wavelength is the wavelength at the intersection of the absorption spectra of the pure donor and pure acceptor films.

[0081] Understandably, when the thin film of the photosensitive active component under test is a pure donor or a pure acceptor, a filter component with the first wavelength is selected. The first wavelength is the wavelength corresponding to the absorption peak of the thin film, that is, the wavelength of the bandpass filter is the wavelength corresponding to the absorption peak of the thin film material on the photosensitive active component under test. When the thin film of the photosensitive active component under test is a BHJ structure or a Q-PHJ structure, a filter component with the second wavelength is selected. The second wavelength is the wavelength at the intersection of the absorption spectra of the pure donor and pure acceptor films, that is, the wavelength of the bandpass filter is the wavelength corresponding to the intersection of the absorption spectra of the donor and acceptor materials on the thin film of the photosensitive active component under test. This is to achieve the best measurement effect. The principle is simple, the equipment is inexpensive, the measurement error is small, and it is suitable for measuring the thickness of large-area thin films and layer-by-layer deposited thin films.

[0082] Since the donor film absorbs almost no light at the absorption peak wavelength of the pure acceptor film, quasi-monochromatic light at the absorption peak wavelength of the pure acceptor film can be used to photograph the Q-PHJ film to obtain its grayscale value. The acceptor layer thickness in the Q-PHJ film can then be calculated. The pure donor layer thickness in the Q-PHJ film can be obtained by subtracting the pure acceptor layer thickness from the total film thickness. Figure 11 The diagram shows a comparison of the total thickness of the spin-coated Q-PHJ film, the thickness of the pure donor PM6 layer, and the thickness of the pure acceptor Y6-BO layer, measured using the quasi-monochromatic light absorption method. Because the spin-coating of the upper Y6-BO layer easily washes away some of the underlying PM6, a relatively thin circular region appears between the PM6 layers in the Q-PHJ film and the other films.

[0083] In summary, this application establishes a photosensitive active layer on a substrate to form a photosensitive active component under test. The film thickness measurement device includes an image acquisition component, a filtering component, and a light source. These components are arranged sequentially, with the light emitted from the light source aligned with the filtering component, the photosensitive active component under test, and the image acquisition component. Under illumination from the light source, the light is filtered by the filtering component, and then the image acquisition component takes a picture of the photosensitive active component under test. This method provides accurate measurements without damaging the film, making it a non-destructive measurement method. After film thickness measurement, device fabrication can continue, resulting in high measurement efficiency. It is also suitable for real-time film thickness measurement and is compatible with automated production methods. Furthermore, by including a black-and-white camera with adjustable magnification in the image acquisition component, the device can directly capture grayscale images of the photosensitive active layer film, facilitating subsequent grayscale value calculation and allowing flexible adjustment of the film thickness measurement range, thus broadening the applicability of the film thickness measurement device. Finally, the light source includes a tungsten lamp monochromatic light source. Based on the specific absorption spectrum of the active layer material, a quasi-monochromatic light can be selected as the incident light and irradiated onto the photosensitive active layer. The photosensitive active layer can then be photographed using a black and white camera. The thickness of the photosensitive active layer film can then be quantitatively calculated based on the brightness of the image, i.e., the grayscale value. This also allows the light source to have advantages such as excellent light focusing, luminous efficiency, stable color temperature, almost no light decay, and long lifespan.

[0084] It should be noted that the various optional implementation methods described in the embodiments of this application can be combined with each other or implemented individually, and the embodiments of this application do not limit this.

[0085] In the description of this application, it should be understood that the terms "upper," "lower," "left," and "right," etc., indicating orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or a specific orientational structure and operation. Therefore, they should not be construed as limitations on this application. Furthermore, "first" and "second" are only for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "multiple" means two or more.

[0086] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal communication between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0087] The above embodiments are described with reference to the accompanying drawings. Other different forms and embodiments are also feasible without departing from the principles of this application, and therefore this application should not be construed as limiting the embodiments set forth herein. Rather, these embodiments are provided to make this application complete and perfect, and to convey the scope of this application to those skilled in the art. In the drawings, component dimensions and relative dimensions may be exaggerated for clarity. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. The terms “comprising” and / or “including”, when used in this specification, indicate the presence of said features, integers, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, elements, components, and / or groups thereof. Unless otherwise shown, numerical ranges, when stated, include the upper and lower limits of the range and any subranges therebetween.

[0088] The above description is only a part of the embodiments of this application and does not limit the scope of protection of this application. Any equivalent device or equivalent process transformation made based on the content of this application specification and drawings, or direct or indirect application in other related technical fields, are similarly included in the patent protection scope of this application.

Claims

1. A film thickness measurement method for measuring the thickness of a photosensitive active layer in a photosensitive active component under test, wherein the photosensitive active layer is attached to a substrate, characterized in that, The film thickness measurement device includes an image acquisition component, a filtering component, and a light source. The light source emits detection light, the filtering component is disposed on the light-emitting side of the light source and is used to adjust the wavelength of the detection light, the photosensitive active component to be tested is located on the light-emitting side of the filtering component, and the image acquisition component is located on the light-emitting side of the photosensitive active component to be tested and is used to acquire images of the photosensitive active layer. A predetermined number of reference photosensitive active components are selected from all photosensitive active components of different thicknesses, and the thickness reference value of the reference photosensitive active components is measured. The image acquisition component of the film thickness measurement device acquires an image of the reference photosensitive active component under test, and obtains the reference grayscale value of the image of the reference photosensitive active component under test. Based on the thickness reference value and the reference grayscale value of the image, the functional relationship between the thickness value of the photosensitive active component under test and the grayscale value of the image is obtained; Obtain the grayscale values ​​of all the images of the photosensitive active components to be tested, and obtain the thickness values ​​of all the photosensitive active components to be tested according to the functional relationship. The step of selecting a filter component with a corresponding wavelength based on the characteristics of the photosensitive active component under test specifically includes: When the thin film of the photosensitive active component to be tested is a pure donor or a pure acceptor, the filter component with the first wavelength is selected; Wherein, the first wavelength is the wavelength corresponding to the absorption peak of the thin film; When the thin film of the photosensitive active component under test is a bulk heterojunction structure or a quasi-planar heterojunction structure, the filter component with the second wavelength is selected; The second wavelength is the wavelength at the intersection of the absorption spectra of the pure donor and pure acceptor films.

2. The film thickness measurement method according to claim 1, characterized in that, The image acquisition component includes a monochrome camera.

3. The film thickness measurement method according to claim 1, characterized in that, The light source includes a monochromatic light source.

4. The film thickness measurement method according to claim 3, characterized in that, The light source includes a tungsten lamp.

5. The film thickness measurement method according to claim 1, characterized in that, The filtering component includes a bandpass filter.

6. The film thickness measurement method according to claim 1, characterized in that, The substrate includes a glass first substrate layer, a first conductive layer and a first transport layer, wherein the first substrate layer, the first conductive layer, the first transport layer and the photosensitive active layer are connected in sequence.

7. The film thickness measurement method according to claim 1, characterized in that, The step of selecting a predetermined number of reference photosensitive active components from all photosensitive active components of different thicknesses and measuring the thickness reference value of the reference photosensitive active components specifically includes: A series of photosensitive active components of different thicknesses were fabricated using an active layer solution. A preset number of photosensitive active components of different thicknesses are selected as thickness references. The thickness of the thickness references is measured using a film thickness measuring instrument to obtain the thickness reference values ​​of the preset number of photosensitive active components.

8. The film thickness measurement method according to claim 1, characterized in that, The process of acquiring an image of the reference photosensitive active component under test via the image acquisition component of the film thickness measurement device, and obtaining the reference grayscale value of the image of the reference photosensitive active component under test, specifically includes: Based on the characteristics of the photosensitive active component under test, a filter component of the corresponding wavelength is selected; Each of the photosensitive active components to be tested is placed between the image acquisition component and the filter component, such that the light emitted from the light source is on the same horizontal line as the filter component, the photosensitive active component to be tested, and the image acquisition component; Images of the photosensitive active component under test are acquired using the image acquisition component.

Images