A method, apparatus, storage medium and lithographic apparatus for overlay monitoring and intervention

Abstract

The present application belongs to the technical field of semiconductor manufacturing, and particularly relates to a method and device for overlay monitoring and intervention, a storage medium and a photolithography equipment. The method comprises the following steps: collecting thickness data of a preset area of a wafer, constructing or fitting a characteristic curve, monitoring wafer overlay OVL (OVerLay) data, and confirming the necessity of an intervention process in combination with the relationship between the characteristic curve and a safety window. For offline data (thickness) distributed in a concentric circular area at the edge of the wafer and a linear relationship feature obtained through data fitting, the overlay quality can be monitored through thickness difference information and corresponding intervention can be taken. By reasonably setting window parameters, a corresponding overlay process monitoring standard can be established to ensure the quality of finished products of a process node. The method and product provide an effective solution for wafer overlay quality monitoring, reduce the cycle of abnormal feedback by more than one order of magnitude, and are beneficial to improving the yield of a photo process and improving the quality of finished products and intermediate workpieces.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor manufacturing technology, and particularly relates to a method, apparatus, storage medium and photolithography equipment for overlay monitoring and intervention. Background Technology

[0002] The accuracy of overlay (OVL) is crucial to the quality of photolithography. Any deviation from the inspection result of any layer exceeding the limit (Out of Specification) will affect subsequent processes, which in turn will affect wafer acceptance test (WAT) and chip probing (CP).

[0003] For example, in tests involving overlay from the contact area (CT) to the active area (AA), if an out-of-situation (OOS) occurs, there is a high probability of a circuit continuity problem. Figure 1 , Figure 2 , Figure 3 , Figure 4 As shown, the regions of OVL anomalies overlaid in the contact area 015 (CT) of wafer 010, grain 011, and microstructure 013, and their schematic diagrams MAP (020) are given respectively. Summary of the Invention

[0004] This invention discloses an overlay monitoring and intervention method, including a first data acquisition step and a third data processing step; wherein, the first data acquisition step acquires a first monitoring data sequence THK-P1 and a second monitoring data sequence THK-P2 at a preset position of the wafer to be monitored; the first monitoring data sequence THK-P1 is acquired from a preset first region of the wafer to be monitored, and the second monitoring data sequence THK-P2 is acquired from a preset second region of the wafer to be monitored.

[0005] The inventors discovered that abnormal regions of OVL tend to be distributed along the edge of the wafer, and further creatively proposed the method and product of this invention to ensure that the overlay OVL process of related products, such as gate polysilicon (GPL), is within a defined range.

[0006] Furthermore, the third data processing step obtains the first and second sets of imprint feature values ​​preset by the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2. The first and second sets of imprint feature values ​​are obtained by weighted combination of the values ​​of the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2.

[0007] Furthermore, based on the distribution characteristics of the first and second set of engraving feature values ​​and the first statistical relationship of the engraving deviation, a first set of engraving safety window is determined; the first set of engraving safety window represents the range of the first and second set of engraving feature values ​​when the engraving deviation meets the preset standard.

[0008] The first and / or second regions used to detect feature information can be annular regions / distributions on the wafer to be monitored.

[0009] Furthermore, its first and second regions can be distributed with the same center or concentric circles.

[0010] Specifically, the first and second set of characteristic values ​​can be the difference between the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2; the first statistical relationship can be a linear relationship, and the weighted combination can be a linear combination.

[0011] Furthermore, the linear relationship can be obtained by fitting the first and second overlay feature values ​​according to the change in overlay deviation.

[0012] To improve overlay quality and increase yield, the overlay monitoring and intervention method in practical applications can also include a fifth intervention optimization step. If the values ​​of the first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 exceed the first overlay safety window, a preset intervention process is executed. The fifth intervention optimization step adjusts the process parameters of the workpiece to eliminate or reduce overlay deviations or further improve overlay accuracy.

[0013] Specifically, the first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 can be obtained offline, or the acquisition and overlay deviation of the first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 can be obtained at the first operation time and the second operation time, respectively; the first operation time and the second operation time are separated by a preset time or are in different processes.

[0014] Accordingly, this embodiment of the invention also discloses an overlay device, including a first detection component; the first detection component includes a first data acquisition unit and a third data processing unit; wherein, the first data acquisition unit acquires a first monitoring data sequence THK-P1 and a second monitoring data sequence THK-P2 at a preset position of the wafer to be monitored; the first monitoring data sequence THK-P1 is acquired from a preset first region of the wafer to be monitored, and the second monitoring data sequence THK-P2 is acquired from a preset second region of the wafer to be monitored.

[0015] Furthermore, its third data processing unit acquires the first and second sets of imprint feature values ​​preset by the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2. The first and second sets of imprint feature values ​​are obtained by weighted combination of the values ​​of the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2.

[0016] Furthermore, based on the distribution characteristics of the first and second set of engraving feature values ​​and the first statistical relationship of the engraving deviation, a first set of engraving safety window is determined; the first set of engraving safety window represents the range of the first and second set of engraving feature values ​​when the engraving deviation meets the preset standard.

[0017] The first and / or second regions used for monitoring are annular regions / distributions on the wafer to be monitored.

[0018] Specifically, its first and second regions can be concentric or distributed in concentric circles.

[0019] Among them, the first and second set of characteristic values ​​can be the difference between the first monitoring data sequence THK-P1 and the second monitoring data sequence THK-P2; their first statistical relationship can be a linear relationship, and their weighted combination can be a linear combination.

[0020] Specifically, the above linear relationship can be obtained by fitting the first and second overlay feature values ​​according to the change in overlay deviation.

[0021] In addition, the overlay device may also be equipped with a fifth intervention optimization unit; if the values ​​of the first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 exceed the first overlay safety window, a preset intervention process is executed; wherein, the fifth intervention optimization unit adjusts the process parameters of the workpiece to eliminate or reduce overlay deviation or further improve the overlay accuracy.

[0022] The first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 can be obtained offline or the acquisition and overlay deviation of the first monitoring data sequence THK-P1 and / or the second monitoring data sequence THK-P2 can be obtained at the first operation time and the second operation time, respectively; that is, the first operation time and the second operation time are separated by a preset time or are in different processes.

[0023] Similarly, embodiments of the present invention also disclose a storage medium and a photolithography apparatus; the storage medium includes a storage medium body for storing a computer program; and when the computer program is executed by a microprocessor, it can implement any of the above-mentioned overlay monitoring and intervention methods; the photolithography apparatus includes any of the above-mentioned overlay devices and / or any of the above-mentioned storage media, which can also realize the detection and intervention of the overlay process.

[0024] In summary, this invention monitors wafer overlay OVL data by collecting thickness data of a preset area of ​​the wafer and constructing or fitting characteristic curves, and confirms the necessity of intervention by combining the relationship between the characteristic curves and the safety window. For offline data (thickness) distributed in concentric annular areas at the edge of the wafer, and the linear relationship characteristics obtained by data fitting, the overlay quality can be monitored and corresponding interventions can be taken through thickness difference information.

[0025] By setting appropriate window parameters, corresponding overlay process monitoring standards can be established to ensure the quality of finished products at process nodes. The method and product provide an effective solution for wafer overlay quality monitoring, reducing the abnormal feedback cycle by more than an order of magnitude, which is beneficial to improving the yield of photolithography processes and enhancing the quality of finished products and intermediate workpieces.

[0026] It should be noted that the terms "first," "second," and similar terms used in this article are merely for describing the constituent elements of the technical solution and do not constitute a limitation on the technical solution, nor should they be interpreted as an indication or implication of the importance of the corresponding elements; elements with terms such as "first," "second," or similar terms indicate that at least one of the elements is included in the corresponding technical solution. Attached Figure Description

[0027] To more clearly illustrate the technical solution of the present invention and facilitate a further understanding of its technical effects, features, and objectives, the present invention will be described in detail below with reference to the accompanying drawings. The drawings constitute an essential part of the specification and are used together with Embodiment 1 of the present invention to illustrate the technical solution of the present invention, but do not constitute a limitation on the present invention.

[0028] The same reference numerals in the attached diagrams represent the same parts, specifically: Figure 1 This is a schematic diagram of the wafer overlay process in related technologies. Figure 1 Overview diagram of the wafer.

[0029] Figure 2 This is a schematic diagram of the wafer overlay process in related technologies. Figure 2 Detailed grain diagram.

[0030] Figure 3 This is a schematic diagram of the wafer overlay process in related technologies. Figure 3 Electron micrograph.

[0031] Figure 4 This is a schematic diagram of the wafer overlay process in related technologies. Figure 4 Anomaly map.

[0032] Figure 5 This is a schematic diagram of the sampling location in an embodiment of the present invention.

[0033] Figure 6 This is an acceptable map diagram after intervention in an embodiment of the present invention.

[0034] Figure 7 This is an example of the data processing results in an embodiment of the present invention.

[0035] Figure 8 This is an example of the effects before and after intervention monitored in an embodiment of the present invention.

[0036] Figure 9 This is the first monitoring data sequence in an embodiment of the present invention.

[0037] Figure 10 This is the second monitoring data sequence according to an embodiment of the present invention.

[0038] Figure 11 These are the first and second sets of engraved feature values ​​in the embodiments of the present invention.

[0039] Figure 12 This is a schematic diagram of the abnormal feedback cycle of related technologies.

[0040] Figure 13 This is a schematic diagram of the abnormal feedback cycle in an embodiment of the present invention.

[0041] Figure 14 This is a schematic diagram of the process of an embodiment of the method of the present invention.

[0042] Figure 15 This is a schematic diagram of the structural composition of an embodiment of the device of the present invention.

[0043] in: 010 - Wafer; 011 - Die; 013 - Wafer microstructure; 015 - Misaligned details; Example of an 020-OVL exception map; 030 - Wafer to be monitored; 031 - First Area; 032 - Second Zone; 040 - Example of post-monitoring and intervention mapping; Example of fitting line segments to offline data (110); 120 - Comparison before and after intervention; 201-First monitoring data sequence (THK-P1); 202-Second monitoring data sequence (THK-P2); 212 - First and second sets of engraved feature values; 310 - First wafer processing step; 313 - First and third process interval; 319 - First Nine Process Interval; 330 - Third monitoring process; 331 - Third Feedback Cycle; 339 - Third and Ninth Process Interval; 390 - Ninth set of measurement process; 391 - The Ninth Feedback Cycle; 510 - First-in-class process; 511 - First data acquisition step; 513 - Third data processing step; 520 - Second in post-processing; 521 - Fifth intervention optimization step; 700-set engraving device; 710 - First detection component; 711 - First Data Acquisition Unit; 713 - Third Data Processing Unit; 720 - Second Intervention Component; 725 - Fifth Intervention Optimization Unit. Detailed Implementation

[0044] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Of course, the specific embodiments described below are merely illustrative of the technical solutions of the present invention, and not intended to limit the invention. Furthermore, the parts described in the embodiments or drawings are merely illustrative examples of relevant parts of the present invention, and not the entirety of the invention.

[0045] like Figure 14 The overlay monitoring and intervention method shown includes a first prior process 510; the first prior process 510 further includes a first data acquisition step 511 and a third data processing step 513; wherein, the first data acquisition step 511 acquires data such as... Figure 5 The first monitoring data sequence 201, namely THK P1, and the second monitoring data sequence 202, namely THK P2, are shown at the preset position of the wafer 030 to be monitored.

[0046] Specifically, the first monitoring data sequence 201 is collected from a preset first region 031 of the wafer 030 to be monitored, and the second monitoring data sequence 202 is collected from a preset second region 032 of the wafer 030 to be monitored.

[0047] Furthermore, in its third data processing step 513, the first and second sets of preset feature values ​​212 of the first monitoring data sequence 201 and the second monitoring data sequence 202 are obtained.

[0048] Among them, the first and second sets of engraved feature values ​​212 are obtained by weighted combination of the values ​​of the first monitoring data sequence 201 and the second monitoring data sequence 202.

[0049] Furthermore, based on the distribution characteristics of the first and second set of engraving feature values ​​212 and the first statistical relationship of engraving deviation, the first set of engraving safety window can be determined; the first set of engraving safety window represents the range of the first and second set of engraving feature values ​​212 when the engraving deviation meets the preset standard.

[0050] Among them, the first region 031 and / or the second region 032 are annular regions / distributions on the wafer 030 to be monitored; the first region 031 and the second region 032 are concentric / distributed.

[0051] Specifically, the first and second set of etched feature values ​​212 are the difference between the first monitoring data sequence 201 and the second monitoring data sequence 202; the first statistical relationship is a linear relationship, and the weighted combination is a linear combination.

[0052] Among them, such as Figure 7 As shown, its linear relationship, namely the offline data fitting line segment example 110, is obtained by fitting the first and second set of engraving feature values ​​212 according to the change of engraving deviation.

[0053] Furthermore, such as Figure 14 The method shown also includes a fifth intervention optimization step 521; if the values ​​of the first monitoring data sequence 201 and / or the second monitoring data sequence 202 exceed the first overlay safety window, a preset intervention process is executed; wherein, the fifth intervention optimization step 521 adjusts the process parameters of the workpiece to eliminate or reduce overlay deviation or further improve overlay accuracy.

[0054] The acquisition and overlay deviation of the first monitoring data sequence 201 and / or the second monitoring data sequence 202 are obtained offline or during the first operation time and the second operation time, respectively; the first operation time and the second operation time are separated by a preset time or are in different processes.

[0055] Similarly, such as Figure 15 The overlay device 700 shown includes a first detection component 710; the first detection component 710 includes a first data acquisition unit 711 and a third data processing unit 713.

[0056] Among them, the first data acquisition unit 711 acquires such as Figure 5The first monitoring data sequence 201, namely THK P1, and the second monitoring data sequence 202, namely THK P2, are shown at the preset positions of the wafer 030 to be monitored. The first monitoring data sequence 201 is collected from the preset first region 031 of the wafer 030 to be monitored, and the second monitoring data sequence 202 is collected from the preset second region 032 of the wafer 030 to be monitored.

[0057] Furthermore, its third data processing unit 713 acquires a first and second set of engraving feature values ​​212 preset by the first monitoring data sequence 201 and the second monitoring data sequence 202. The first and second set of engraving feature values ​​212 are obtained by weighted combination of the values ​​of the first monitoring data sequence 201 and the second monitoring data sequence 202. Based on the distribution characteristics of the first and second set of engraving feature values ​​212 and the first statistical relationship with the engraving deviation, a first engraving safety window is determined. The first engraving safety window represents the range of the first and second set of engraving feature values ​​212 when the engraving deviation meets the preset standard.

[0058] Specifically, the first region 031 and / or the second region 032 are annular regions / distributions on the wafer 030 to be monitored; the first region 031 and the second region 032 are concentric / distributed.

[0059] Among them, the first and second set of imprinted feature values ​​212 are the difference between the first monitoring data sequence 201 and the second monitoring data sequence 202; their first statistical relationship is a linear relationship, and their weighted combination is a linear combination.

[0060] Specifically, the linear relationship can be obtained by fitting the first and second overlay feature values ​​212 according to the change in overlay deviation.

[0061] Furthermore, such as Figure 15 The overlay device 700 shown also includes a fifth intervention optimization unit 725; if the values ​​of the first monitoring data sequence 201 and / or the second monitoring data sequence 202 exceed the first overlay safety window, a preset intervention process is executed; wherein, the fifth intervention optimization unit 725 adjusts the process parameters of the workpiece to eliminate or reduce overlay deviation or further improve overlay accuracy.

[0062] The first monitoring data sequence 201 and / or the second monitoring data sequence 202 are obtained offline, or the acquisition and overlay deviation of the data of the first monitoring data sequence 201 and / or the second monitoring data sequence 202 are obtained during the first operation time and the second operation time, respectively; the first operation time and the second operation time are separated by a preset time or are in different processes. Accordingly, when the storage medium includes a storage medium body for storing a computer program, and the computer program is executed by a microprocessor, it can implement any of the overlay monitoring and intervention methods described above. Or when the lithography equipment includes any of the overlay devices 700 and / or storage media described above, the same inventive concept can be implemented and the same technical problem can be solved.

[0063] In practical applications, accurate alignment of each overlay layer in a photo is crucial for various technology platforms. Any OOS (Out of Measure) of any OVL layer will have different impacts on subsequent processes, thus affecting WAT (Waste-to-Action) and CP (Content-to-Content). For example, if OOS occurs in the CT to AA OVL test, it will lead to a series of problems such as circuit connectivity issues.

[0064] like Figure 12 As shown in the STI liner OX process, due to its high temperature, the wafer is prone to accumulating thermal effects and producing slight deformation during the high-temperature process, which leads to anomalies in the subsequent GPL OVL. Since the GPL OVL layer is far from the STI Liner OXlayer step, its feedback cycle is about 30 days, resulting in slow feedback and significant impact.

[0065] In contrast, this invention, by taking into account the characteristic that GPL OVL maps are prone to OVL anomalies at the edges, specifically monitors workpiece quality through offline data. The offline wafer, namely Offline Wafer RTO wafer edgeTHK, can ensure that GPL OVL is normal by monitoring GPL OVL, shortening the feedback time and reducing adverse effects.

[0066] Among them, such as Figure 5 As shown, for the GPL OVL Map, THK P1 and THK P2 can be collected at the corresponding positions of the wafer edges where OVL anomalies are likely to occur. By determining the difference between THK P1 and THK P2, a linear relationship between the difference between THK P1 and THK P2 and GPL OVL can be established to determine the safety window corresponding to this difference under normal GPL OVL conditions, thereby achieving the purpose of monitoring GPL OVL through this difference.

[0067] Specifically, offline monitoring (Offline Monitor) can be used for GPL OVL Map. This involves collecting the thickness at the edge of the wafer where OVL anomalies are likely to occur, determining its statistical relationship (SPC Chart), and then collecting the thickness difference (THK P1 and THK P2 differences) to establish a safety window and a standard (SPEC). This ensures that the STI OX process fluctuates within a reasonable range, guaranteeing normal GPL OVL operation.

[0068] It should be noted that the above embodiments are only for more clearly illustrating the technical solution of the present invention. Those skilled in the art will understand that the implementation of the present invention is not limited to the above content. Any obvious changes, substitutions or replacements made based on the above content do not exceed the scope of the technical solution of the present invention. Other implementations will also fall within the scope of the present invention without departing from the concept of the present invention.

Claims

1. A method for monitoring and intervening in overlay patterns, characterized in that... The process includes a first data acquisition step (511) and a third data processing step (513); wherein, the first data acquisition step (511) acquires a first monitoring data sequence (201) THK-P1 and a second monitoring data sequence (202) THK-P2 at a preset location on the wafer to be monitored (030); the first monitoring data sequence (201) THK-P1 is acquired from a preset first region (031) on the wafer to be monitored (030), and the second monitoring data sequence (202) THK-P2 is acquired from a preset second region (032) on the wafer to be monitored (030); the third data processing step (513) acquires a first monitoring data sequence (201) THK-P1 ... second monitoring data sequence (202) THK-P2 is acquired from a preset second region (032) on the wafer to be monitored (030); the third data processing step (513) acquires a second monitoring data sequence (202) THK-P2 at a preset location on the wafer to be monitored (030); the third monitoring data sequence (513) acquires a second monitoring data sequence (202) THK-P2 at a preset location on the wafer to be monitored (030); the third monitoring data sequence (513) acquires a second monitoring data sequence (202) THK-P2 at a preset location on the wafer to be monitored (030); the third monitoring data sequence (513) acquires a second monitoring data sequence (202) THK- The first set of two imprint feature values ​​(212) preset by the first monitoring data sequence (201) THK-P1 and the second monitoring data sequence (202) THK-P2 are obtained by weighted combination of the values ​​of the first monitoring data sequence (201) THK-P1 and the second monitoring data sequence (202) THK-P2; the first imprint safety window is determined according to the distribution characteristics of the first set of two imprint feature values ​​(212) and the first statistical relationship of imprint deviation; the first imprint safety window represents the range of the first set of two imprint feature values ​​(212) when the imprint deviation meets the preset standard.

2. The overlay monitoring and intervention method as described in claim 1, wherein: The first region (031) and / or the second region (032) are annular regions / distributions on the wafer (030) to be monitored.

3. The overlay monitoring and intervention method as described in claim 2, wherein: The first region (031) and the second region (032) are concentric / distributed.

4. The overlay monitoring and intervention method as described in any one of claims 1, 2, or 3, wherein: The first two sets of feature values ​​(212) are the difference between the first monitoring data sequence (201) THK-P1 and the second monitoring data sequence (202) THK-P2; the first statistical relationship is a linear relationship, and the weighted combination is a linear combination.

5. The overlay monitoring and intervention method as described in claim 4, wherein: The linear relationship is obtained by fitting the first and second overlay feature values ​​(212) with data according to the change of the overlay deviation.

6. The overlay monitoring and intervention method as described in any one of claims 1, 2, 3, or 5, further comprising a fifth intervention optimization step (521); if the values ​​of the first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 exceed the first overlay safety window, then a preset intervention process is executed; wherein, The fifth intervention optimization step (521) adjusts the process parameters of the workpiece to eliminate or reduce the overlay deviation or further improve the overlay accuracy.

7. The overlay monitoring and intervention method as described in claim 6, wherein: The first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 are obtained offline, or the acquisition of the first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 data and the overlay deviation are obtained at the first operation time and the second operation time, respectively; the first operation time and the second operation time are separated by a preset time or are in different processes.

8. A stylus engraving device (700), comprising a first detection component (710); the first detection component (710) comprising a first data acquisition unit (711) and a third data processing unit (713); wherein, The first data acquisition unit (711) acquires a first monitoring data sequence (201) THK-P1 and a second monitoring data sequence (202) THK-P2 at a preset location on the wafer to be monitored (030); the first monitoring data sequence (201) THK-P1 is acquired from a preset first region (031) of the wafer to be monitored (030), and the second monitoring data sequence (202) THK-P2 is acquired from a preset second region (032) of the wafer to be monitored (030); the third data processing unit (713) acquires the first monitoring data sequence (201) THK-P1. K-P1 and the second monitoring data sequence (202) THK-P2 preset first two set of engraving feature values ​​(212), the first two set of engraving feature values ​​(212) are obtained by weighted combination of the values ​​of the first monitoring data sequence (201) THK-P1 and the second monitoring data sequence (202) THK-P2; according to the distribution characteristics of the first two set of engraving feature values ​​(212) and the first statistical relationship of engraving deviation, the first engraving safety window is determined; the first engraving safety window represents the range of the first two set of engraving feature values ​​(212) when the engraving deviation meets the preset standard.

9. The overlay engraving device (700) as described in claim 8, wherein: The first region (031) and / or the second region (032) are annular regions / distributions on the wafer (030) to be monitored.

10. The overlay engraving device (700) as described in claim 9, wherein: The first region (031) and the second region (032) are concentric / distributed.

11. The overlay device (700) as described in any one of claims 8, 9 or 10, wherein: The first two sets of feature values ​​(212) are the difference between the first monitoring data sequence (201) THK-P1 and the second monitoring data sequence (202) THK-P2; the first statistical relationship is a linear relationship, and the weighted combination is a linear combination.

12. The overlay engraving device (700) as described in claim 11, wherein: The linear relationship is obtained by fitting the first and second overlay feature values ​​(212) with data according to the change of the overlay deviation.

13. The overlay device (700) as described in any one of claims 8, 9, 10, or 12, further comprising a fifth intervention optimization unit (725); if the values ​​of the first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 exceed the first overlay safety window, a preset intervention process is executed; wherein, The fifth intervention optimization unit (725) adjusts the process parameters of the workpiece to eliminate or reduce the overlay deviation or further improve the overlay accuracy.

14. The overlay engraving device (700) as described in claim 13, wherein: The first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 are obtained offline, or the acquisition of the first monitoring data sequence (201) THK-P1 and / or the second monitoring data sequence (202) THK-P2 data and the overlay deviation are obtained at the first operation time and the second operation time, respectively; the first operation time and the second operation time are separated by a preset time or are in different processes.

15. A storage medium comprising: The storage medium itself used to store computer programs; When the computer program is executed by the microprocessor, it implements the overlay monitoring and intervention method as described in any one of claims 1 to 7.

16. A photolithography apparatus, comprising: The overlay device (700) as described in any one of claims 8 to 14. And / or the storage medium as described in any of claims 15.

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