A polarisation reconfigurable millimeter wave circular polarized dielectric resonant antenna

Abstract

This invention relates to the field of antenna technology for wireless communication, specifically to a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna, comprising an upper dielectric substrate 1, a middle dielectric substrate 2, and a lower dielectric substrate 3; the upper dielectric substrate 1 has an embedded upper radiator 4, and an upper via ring is provided around the upper radiator 4; the middle dielectric substrate 2 has an embedded middle radiator 5, and a middle via ring is provided around the middle radiator 5; the upper surface of the lower dielectric substrate 3 has a closed cross slot 8, and the lower surface of the lower dielectric substrate 3 has an RF feed network 9, an impedance matching circuit 10, a DC bias circuit 11, and a PIN diode 12; this invention solves the problems of low operating frequency, narrow bandwidth, and difficulty in arraying existing reconfigurable dielectric resonant antennas.

Description

Technical Field

[0001] This invention relates to the field of antenna technology for wireless communication, and specifically to a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna. Background Technology

[0002] In recent years, with the rapid growth in the number of mobile users, communication systems have been constantly updated and expanded, placing higher demands on antenna design. On the one hand, antennas are required to operate at high frequencies, with circular polarization, wide bandwidth, and low loss to meet the needs of high-capacity, high-quality wireless communication. On the other hand, multi-functionality and shared use are required to reduce the number of antennas, thereby reducing the physical space occupied by the system and compressing costs. Reconfigurable dielectric resonant antennas combine the advantages of low loss of dielectric resonant antennas with the multi-functionality of reconfigurable antennas, making them of significant research importance. However, the radiator of a dielectric resonant antenna is a non-metallic material with a high dielectric constant. The reconfigurable design method of changing the radiator is not applicable to solid-state dielectric resonant antennas. Therefore, current research results are limited and mostly focus on linear polarization and low operating frequencies (below 10 GHz).

[0003] Millimeter waves have strong penetrating power through sand and smoke, meaning they can propagate with almost no attenuation in foggy and dusty weather. The ability of circularly polarized antennas to resist cloud and rain interference makes them suitable for operation in various weather conditions. While research on millimeter-wave circularly polarized antennas has become increasingly mature in many aspects of millimeter-wave antenna technology, there have been few achievements in the field of dielectric resonant antennas.

[0004] The polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna can change the polarization of electromagnetic waves according to the operating environment, adding independent transmit and receive channels without increasing the antenna size, thus greatly improving antenna utilization. At the same time, it features high operating frequency, low loss, and strong anti-interference capability, making it a promising candidate for applications in wireless communication. Summary of the Invention

[0005] To address the issues of low operating frequency, narrow bandwidth, and linear polarization in existing polarized reconfigurable dielectric resonant antennas, this invention provides a polarized reconfigurable millimeter-wave circularly polarized dielectric resonant antenna that eliminates the mutual interference between the DC bias circuit and the RF feed network, simplifying the arraying complexity of the reconfigurable antenna.

[0006] The specific design includes: an upper dielectric substrate 1, a middle dielectric substrate 2, and a lower dielectric substrate 3; the upper dielectric substrate 1 has an embedded upper radiator 4, and an upper via ring is provided around the upper radiator 4; the middle dielectric substrate 2 has an embedded middle radiator 5, and a middle via ring is provided around the middle radiator 5; the upper surface of the lower dielectric substrate 3 has a closed cross groove 8, and the lower surface of the lower dielectric substrate 3 has an RF feed network 9, an impedance matching circuit 10, a DC bias circuit 11, and a PIN diode 12.

[0007] Furthermore, the relative permittivity of the upper dielectric substrate 1 is not less than 8, and the thickness is 0.762~1.27mm; the relative permittivity of the middle dielectric substrate 2 is not higher than 3.5, and the thickness is 0.4~0.6mm; the relative permittivity of the lower dielectric substrate 3 is not higher than 3.5, and the thickness is 0.1~0.3mm; the upper and lower surfaces of the upper dielectric substrate 1, the middle dielectric substrate 2 and the lower dielectric substrate 3 are all covered with a metal layer, and the thickness of the metal layer is 0.035mm.

[0008] Furthermore, the upper and middle via rings have the same structure, both consisting of 18 to 36 metallized vias 7; the positions of all metallized vias 7 in the upper via ring correspond one-to-one with the positions of all metallized vias 7 in the middle via ring, and the metallized vias 7 connect the metal layer on the upper surface of the upper dielectric substrate 1 and the metal layer on the lower surface of the middle dielectric substrate 2.

[0009] Furthermore, the upper dielectric substrate 1 has four through circular channels; each circular channel has an upper radiator 4 and a connecting bridge 6 connecting the upper radiator 4 and the upper dielectric substrate 1; the upper radiator 4 is a stacked cylindrical resonator with a diameter ranging from 2 to 3.5 mm; the connecting bridge 6 has a length of 2 to 3.5 mm and a width of 0.2 to 0.5 mm.

[0010] Furthermore, each circular channel is provided with two or four connecting bridges 6 for connecting the upper radiator 4 and the upper dielectric substrate 1; when two connecting bridges 6 are provided, the included angle between the two connecting bridges 6 is 180°; when four connecting bridges 6 are provided, the included angle between any two adjacent connecting bridges 6 is 90°.

[0011] Furthermore, the middle layer radiator 5 is a stacked cylindrical resonator, the diameter of which is the diameter of the upper layer radiator 4 plus the length 6 of the two connecting bridges.

[0012] Furthermore, the impedance matching circuit 10 consists of a tapered microstrip line, an H-shaped microstrip line, and four L-shaped microstrip lines; wherein, the tapered microstrip line is connected to the transverse side of the H-shaped microstrip line, and the four ends of the H-shaped microstrip line are respectively connected to an L-shaped microstrip line; each L-shaped microstrip line has two PIN diodes 12 on both sides of its end.

[0013] Furthermore, the RF feed network 9 is a rectangular microstrip line, and the RF feed network 9 is connected to the tapered microstrip line of the impedance matching circuit 10.

[0014] Furthermore, the closed cross groove 8 includes a cross groove, two closed gaps and four extension lines. The four ports of the cross groove are connected to the closed gaps through the extension lines. Each single groove of the cross groove has two metallized through holes 7 on its inner and outer sides, and each closed gap has one metallized through hole 7 on its inner side.

[0015] The beneficial effects of this invention are:

[0016] This invention discloses a millimeter-wave circularly polarized dielectric resonant antenna with reconfigurable polarization. Through a closed design with enclosed cross-slots, the interference between the RF feed network and the DC bias circuit is reduced. Using PIN diodes as RF switches to control the relative length of the enclosed cross-slots allows for switching between left- and right-hand circular polarization. Compared to existing technologies, this invention achieves a single-port, electrically controllable, bandwidth-adjustable, and polarization-tunable dielectric resonant antenna array in the millimeter-wave band, with stable operation and excellent circular polarization within its operating frequency band. It solves the problems of low operating frequency, narrow bandwidth, and difficult array assembly in existing reconfigurable dielectric resonant antennas. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of a three-layer dielectric substrate structure for a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention.

[0018] Figure 2 This is a schematic diagram of the copper cladding layers on the upper and lower surfaces of the upper dielectric substrate and the copper cladding layer on the upper surface of the middle dielectric substrate of a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention.

[0019] Figure 3 This is a schematic diagram of the copper-clad layer structure on the lower surface of the dielectric substrate in the middle layer of a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention.

[0020] Figure 4 This is a schematic diagram of the ground layer structure above the lower dielectric substrate of a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention.

[0021] Figure 5 This is a wiring diagram of the radio frequency feed network and DC bias circuit below the lower dielectric substrate of a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention.

[0022] Figure 6 The image shows the simulated reflection coefficient of a left-handed circularly polarized dielectric resonant antenna array with reconfigurable polarization for millimeter waves, as described in this invention.

[0023] Figure 7 This is a simulation axial ratio diagram of a left-hand circularly polarized dielectric resonant antenna array with reconfigurable polarization for millimeter-wave waves, as described in this invention.

[0024] Figure 8 This is a simulation gain diagram of a left-hand circularly polarized dielectric resonant antenna array with reconfigurable polarization for millimeter-wave waves, as described in this invention.

[0025] Figure 9 The simulation efficiency diagram of a left-hand circular polarization of a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array according to the present invention is shown.

[0026] Figure 10 This is a simulation far-field pattern of a left-hand circularly polarized dielectric resonant antenna array with reconfigurable polarization for millimeter waves, as described in this invention, with a polarization of φ=0°.

[0027] Figure 11 This is a simulation of the far-field radiation pattern of a left-hand circularly polarized dielectric resonant antenna array with reconfigurable polarization of millimeter waves, as described in this invention, with a polarization of φ=90°.

[0028] Among them, 1-upper dielectric substrate, 2-middle dielectric substrate, 3-lower dielectric substrate, 4-upper radiator, 5-middle radiator, 6-connecting bridge, 7-metallized via, 8-closed cross slot, 9-RF feed network, 10-impedance matching circuit, 11-DC bias circuit, 12-PIN diode. Detailed Implementation

[0029] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] This invention provides a polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array, such as... Figure 1-5 As shown, it includes an upper dielectric substrate 1, a middle dielectric substrate 2, and a lower dielectric substrate 3; the upper dielectric substrate 1 has an embedded upper radiator 4, and an upper via ring is provided around the upper radiator 4; the middle dielectric substrate 2 has an embedded middle radiator 5, and a middle via ring is provided around the middle radiator 5; the upper surface of the lower dielectric substrate 3 has a closed cross groove 8, and the lower surface of the lower dielectric substrate 3 has an RF feed network 9, an impedance matching circuit 10, a DC bias circuit 11, and a PIN diode 12.

[0031] Preferably, the upper dielectric substrate 1 has a relative permittivity of not less than 8 and a thickness of 0.762~1.27mm; the middle dielectric substrate 2 has a relative permittivity of not more than 3.5 and a thickness of 0.4~0.6mm; the lower dielectric substrate 3 has a relative permittivity of not more than 3.5 and a thickness of 0.1~0.3mm; the upper and lower surfaces of the upper dielectric substrate 1, the middle dielectric substrate 2 and the lower dielectric substrate 3 are all covered with a metal layer with a thickness of 0.035mm.

[0032] The copper layer shapes on the upper and lower surfaces of the upper dielectric substrate 1 and the upper surface of the middle dielectric substrate 2 are as follows: Figure 2 , Figure 3 As shown; in the upper dielectric substrate 1, a copper layer covers all surfaces except for the upper radiator 4 and the upper and lower surfaces of all metallized vias; in the middle dielectric substrate 2, a copper layer covers all surfaces except for the upper surface of the middle radiator 5 and the upper and lower surfaces of all metallized vias. Furthermore, a cross-shaped groove is formed in each middle via ring on the lower surface of the middle dielectric substrate 2, and the surface of the cross-shaped groove is not covered with a copper layer. The length of a single cross-shaped groove is L. s1 Width is W s1 .

[0033] Preferably, such as Figure 1 The upper and middle via rings have the same structure, each consisting of 18 to 36 metallized vias 7. The positions of all metallized vias 7 in the upper via ring correspond one-to-one with the positions of all metallized vias 7 in the middle via ring, connecting the metal layer on the upper surface of the upper dielectric substrate 1 and the metal layer on the lower surface of the middle dielectric substrate 2 through the metallized vias 7. The metallized vias 7 can be hollow metal vias, solid metal holes, or continuous metallized walls, and the diameter d1 of the metallized vias 7 is 0.5 to 1 mm.

[0034] Preferably, such as Figure 1 As shown, the upper dielectric substrate 1 has four through circular channels; each circular channel contains an upper radiator 4, and a connecting bridge 6 connects the upper radiator 4 to the upper dielectric substrate 1; the upper radiator 4 is a stacked cylindrical resonator with a diameter D ranging from 2 to 3.5 mm; the length L of the connecting bridge 6 is... b It is 2~3.5mm in diameter and has a width of W. b The thickness is 0.2~0.5mm. The diameter of the circular channel is D+2L. b .

[0035] Specifically, the metallized through-hole 7 is not tangent to the circular channel, and the distance between the metallized through-hole 7 and the edge of the circular channel is 0.1mm~0.3mm.

[0036] The middle-layer radiator 5 is also a stacked cylindrical resonator, with a diameter equal to the diameter of the upper-layer radiator 4 plus the length 6 of the two connecting bridges. Since the diameter of the upper-layer radiator 4 is smaller than that of the middle-layer radiator 5, connecting bridges 6 are provided in the upper dielectric substrate 1. The size of the connecting bridges 6 affects antenna performance; therefore, this embodiment specifies the aforementioned size requirements for the connecting bridges 6. Furthermore, the stacked structure of embedded cylindrical resonators used in this embodiment can increase the antenna bandwidth and improve antenna gain.

[0037] Preferably, each circular channel is provided with two or four connecting bridges 6 for connecting the upper radiator 4 and the upper dielectric substrate 1; when two connecting bridges 6 are provided, the included angle between the two connecting bridges 6 is 180°; when four connecting bridges 6 are provided, the included angle between any two adjacent connecting bridges 6 is 90°. Figure 1 The example shown is the case where four connecting bridges are used.

[0038] Preferably, such as Figure 4 As shown, the closed cross groove 8 is hourglass-shaped, comprising a cross groove, two closed gaps, and four extension lines. The four ends of the cross groove are connected to the closed gaps via the extension lines. Each single cross groove has two metallized through holes on its inner and outer sides, and each closed gap has one metallized through hole on its inner side. The width W of a single cross groove is... s1 The thickness is 0.1~0.4mm, and the length L of the extension line is... s2 The width W of the sealed gap is 0.3~1mm. s2 It is 0.1~0.2mm.

[0039] Preferably, such as Figure 5 As shown, the impedance matching circuit 10 consists of a tapered microstrip line, an H-shaped microstrip line, and four L-shaped microstrip lines; wherein, the tapered microstrip line is connected to the horizontal side of the H-shaped microstrip line, and the four ends of the H-shaped microstrip line are respectively connected to an L-shaped microstrip line; two PIN diodes 12 are respectively provided on both sides of the end of each L-shaped microstrip line.

[0040] The vertical middle section L of the L-shaped microstrip line t2 It also adopts a gradient design, with the width W4 at the end of the trace being 0.1mm~0.4mm.

[0041] The PIN diode 12 is soldered to the pad on the lower surface of the lower dielectric substrate 3. The center position of the pad is the same as the center position between the metallized through holes on both sides of the single cross groove of the closed cross groove 8.

[0042] The radio frequency (RF) feed network 9 is a rectangular microstrip line, and the RF feed network 9 is connected to the tapered microstrip line of the impedance matching circuit 10.

[0043] The closed cross slots 8 on the upper surface of the lower dielectric substrate 3 couple the energy transmitted by the lower surface RF feed network 9 to the middle radiator 5 and the upper radiator 4. The characteristic impedance of the microstrip line input terminal of the RF feed network 9 is 50 ohms. The input signal is fed to each closed cross slot 8 through two tapered impedance matching circuits 10.

[0044] In one embodiment, the upper dielectric substrate 1 is made of FSD1020GR high-frequency loss material with a relative permittivity of 10.2, a loss tangent of 0.0005, and a thickness of h1; the middle dielectric substrate 2 and the lower dielectric substrate 3 are both made of FSD220GR high-frequency loss material with a relative permittivity of 2.2 and a loss tangent of 0.0009; the thicknesses of the middle dielectric substrate 2 and the lower dielectric substrate 3 are h2 and h3, respectively; the three dielectric substrates have the same length and width, L and W, respectively. The upper radiator 4 has a diameter of D, and the connecting bridge 6 has a length and width of L. b W b The diameter of the middle-layer radiator 5 is the sum of the diameter of the upper-layer radiator 4 and the length of the connecting bridges 6 at both ends, i.e.: D + 2 × L b Each radiating unit (both the upper radiator 4 and the middle radiator 5 are radiating units) is surrounded by a ring of metallized vias 7. The diameter of the metallized vias 7 is d1. The metallized vias 7 are distributed at equal angles around each radiating unit, with the center of each radiating unit. The positions of the metallized vias 7 on the middle and upper dielectric substrates are the same. There are 24 metallized vias 7 around each radiating unit. The middle and upper dielectric substrates each have 4 radiating units, and 8 of the metallized vias 7 on each dielectric substrate overlap.

[0045] Specifically, the upper and lower surfaces of the upper dielectric substrate 1 and the middle dielectric substrate 2 are copper-clad layers as shown in Figures 2 and 3. Metallized vias 7 connect each copper-clad surface, separating the radiating unit from the surrounding dielectric material.

[0046] Specifically, as shown in Figure 4, four closed cross-slots 8 are formed on the upper surface of the lower dielectric substrate 3. In each closed cross-slot 8, the length of a single slot in the cross-slot is L. s1 Width is W s1 The length of one extension line is L. s2 The extension line connects to the port of the cross groove and is perpendicular to each groove. The width of a closed gap is W. s2 . Figure 4 L p The distance between two metallized through holes 7 on the same side of a single slot, and more specifically, L p This is the distance between the PIN diodes 12 at both ends of the bottom single slot.

[0047] The closed cross slot 8 can not only excite circularly polarized waves, but also divide the lower dielectric substrate 3 into 9 regions. With the help of the DC bias circuit 11 to control the RF switch of the PIN diode 12, the left / right circular polarization of the antenna array can be reconfigured.

[0048] Specifically, such as Figure 4 As shown, in this embodiment, four closed cross-slots 8 divide the upper surface copper layer of the lower dielectric substrate 3 into nine regions, where regions 1-8 are triangular regions. To independently control the diode's state, the potentials of these regions need to be independent. Therefore, a solder resist layer is also provided above the copper layer on the upper surface of the lower dielectric substrate 3 to prevent the nine regions of the lower dielectric substrate 3 from directly connecting to the lower surface copper layer of the middle dielectric substrate, which would cause these nine regions to have the same potential, leading to a short circuit in the DC bias circuit 11. The surfaces of the closed cross-slots 8 and the metallized vias 7 of the lower dielectric substrate 3 are not covered with solder resist ink.

[0049] Specifically, the impedance matching circuit 10 on the lower surface of the lower dielectric substrate 3 consists of a gradient microstrip line, an H-shaped microstrip line, and four L-shaped microstrip lines. The gradient microstrip line is connected to the transverse side of the H-shaped microstrip line, and the four ends of the H-shaped microstrip line are respectively connected to an L-shaped microstrip line. Two PIN diodes 12 are provided on both sides of the end of each L-shaped microstrip line, for a total of 16 PIN diodes 12, which are designated as S1 to S16. Each PIN diode 12 forms an RF switch.

[0050] The DC bias circuit 11 is located outside the impedance matching circuit 10 and is equipped with S. A and S B Two DC switches are used to control the voltage in different areas of the underlying dielectric substrate, thereby regulating the on / off state of the RF switches. The PIN diode 12 has two soldering orientation options; the first option is... Figure 5 The direction shown, the second option is the same as... Figure 5 In the opposite direction, Table 1 shows the operating status of each switch in the first scheme. If the second scheme is adopted, the operating status of the switches is the opposite of that in Table 1.

[0051] Table 1 Switch operating status

[0052]

[0053] Specifically, S A Connect regions 1-8, ensuring that the potentials of these eight regions are identical during the control process; S BConnected to region 9, which is the entire copper cladding layer on the upper surface of the lower dielectric substrate excluding the eight smaller regions, this region is essentially the same as region 9. In other words, the copper cladding layer on the upper surface of the lower dielectric substrate was originally interconnected. By setting closed cross-slots, the copper cladding layer on the upper surface of the lower dielectric substrate is divided into eight approximately triangular independent regions, and the potential of these eight regions can be independently controlled. To ensure that the PIN diodes operate according to the target state, the potentials of regions 1-8 must be opposite to those of region 9. Therefore, we centralize the DC control of regions 1-8 into a single switch, namely S. A This way, only two DC switches are needed, making it more convenient.

[0054] Specifically, the RF feed network 9 is a rectangular microstrip line, and it is connected to the tapered microstrip line of the impedance matching circuit 10. The rectangular microstrip line has a characteristic impedance of 50 ohms and a width of 0.75 mm. In addition to the tapered microstrip line, the impedance matching circuit also includes a second tapered microstrip line in each L-shaped microstrip line, denoted as L. t1 The length of the second gradient microstrip line is L. t2 .

[0055] The dimensional parameters of the antenna in this embodiment are shown in Table 2:

[0056] Table 2

[0057]

[0058] The performance indicators of this invention were analyzed using CST three-dimensional electromagnetic simulation software. Since the left-hand and right-hand rotation states are structurally symmetrical, the simulation results for reflection coefficient, axial ratio, gain, and efficiency are the same for both states. The results are as follows:

[0059] like Figure 6 The figure shows the simulated reflection coefficient curve of the left-hand circularly polarized input port of the polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array. The operating frequency band below -10dB is 20.1GHz-23.1GHz.

[0060] like Figure 7 The figure shows the simulation diagram of the left-hand circular polarization dielectric resonant antenna array with reconfigurable polarization in the +Z direction. The frequency band with an axial ratio of less than 3dB is 20.2GHz-23.3GHz.

[0061] like Figure 8 The figure shows the simulation results of the left-hand circular polarization gain of the reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array. The average gain within the circular polarization operating frequency band is approximately 12.7 dBic, and the antenna gain is at its maximum at 22.5 GHz, reaching 13.1 dBic.

[0062] like Figure 9 The figure shows the simulation results of the left-hand circular polarization efficiency of the reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array. The average radiation efficiency of the antenna in the circularly polarized operating frequency band is higher than 75%.

[0063] like Figure 10 The far-field radiation pattern of the polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array with left-hand circular polarization φ=0° at a frequency of 21.5GHz is shown. The maximum radiation direction of the main lobe deviates from the +Z direction by 3°, the 3dB beamwidth is 32.9°, and the sidelobe frequency is -10.8dB.

[0064] like Figure 11 The image shows the far-field radiation pattern of the polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna array with left-hand circular polarization φ=90° at a frequency of 21.5GHz. The maximum radiation direction of the main lobe deviates from the +Z direction by 1°, the 3dB beamwidth is 33.7°, and the sidelobe frequency is -9.7dB.

[0065] Compared to existing technologies, the polarization-reconfigurable millimeter-wave broadband circularly polarized dielectric resonant antenna array described in this invention features a high operating frequency, large bandwidth, high gain and efficiency, and stable operation. The antenna operates in two states: left-hand / right-hand circular polarization. The impedance bandwidth is 13.9% (20.1-23.1 GHz), the axial ratio bandwidth is 14.3% (20.2-23.3 GHz), the peak gain is 13.1 dBic, and the average radiation efficiency is higher than 75%, achieving excellent circular polarization within the operating frequency band. In this embodiment, the dielectric resonant antenna is a stacked cylindrical shape embedded within the dielectric substrate, facilitating the fabrication and assembly of the antenna layers. The ground-etched coupling slots are closed cross-slots, which can both excite the dielectric resonator to generate circularly polarized wave radiation and create multiple independent regions in the ground layer. Combined with the DC bias circuit controlling the state of the PIN diodes, this effectively reduces the impact of the DC bias circuit on the RF feed network.

[0066] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "setting," "connection," "fixing," "rotation," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Unless otherwise explicitly limited, those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0067] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna, characterized in that, It includes an upper dielectric substrate (1), a middle dielectric substrate (2) and a lower dielectric substrate (3); the upper dielectric substrate (1) has an upper radiator (4) embedded in it, and an upper through-hole ring is provided around the upper radiator (4); the middle dielectric substrate (2) has a middle radiator (5) embedded in it, and a middle through-hole ring is provided around the middle radiator (5); the upper surface of the lower dielectric substrate (3) is provided with a closed cross groove (8), and the lower surface of the lower dielectric substrate (3) is provided with an RF feed network (9), an impedance matching circuit (10), a DC bias circuit (11) and a PIN diode (12); The upper dielectric substrate (1) has four through circular channels; each circular channel has an upper radiator (4) and a connecting bridge (6) connecting the upper radiator (4) and the upper dielectric substrate (1). The closed cross groove (8) includes a cross groove, two closed gaps and four extension lines. The four ports of the cross groove are connected to the closed gaps through the extension lines. Each single groove of the cross groove has two metallized through holes (7) on its inner and outer sides, and each closed gap has one metallized through hole (7) on its inner side. The PIN diode (12) is soldered to the pad on the lower surface of the lower dielectric substrate (3). The center position of the pad is the same as the center position between the metallized through holes on both sides of the single cross groove of the closed cross groove (8).

2. The polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 1, characterized in that, The upper dielectric substrate (1) has a relative permittivity of not less than 8 and a thickness of 0.762~1.27mm; the middle dielectric substrate (2) has a relative permittivity of not more than 3.5 and a thickness of 0.4~0.6mm; the lower dielectric substrate (3) has a relative permittivity of not more than 3.5 and a thickness of 0.1~0.3mm; the upper and lower surfaces of the upper dielectric substrate (1), the middle dielectric substrate (2) and the lower dielectric substrate (3) are covered with a metal layer with a thickness of 0.035mm.

3. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 2, characterized in that, The upper through-hole ring and the middle through-hole ring have the same structure, both consisting of 18 to 36 metallized through-holes (7); the positions of all the metallized through-holes (7) in the upper through-hole ring correspond one-to-one with the positions of all the metallized through-holes (7) in the middle through-hole ring, and the metal layer on the upper surface of the upper dielectric substrate (1) and the metal layer on the lower surface of the middle dielectric substrate (2) are connected through the metallized through-holes (7).

4. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 1, characterized in that, The upper radiator (4) is a stacked cylindrical resonator with a diameter range of 2~3.5mm; the connecting bridge (6) has a length of 2~3.5mm and a width of 0.2~0.5mm.

5. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 4, characterized in that, Each circular channel is provided with two or four connecting bridges (6) for connecting the upper radiator (4) and the upper dielectric substrate (1); when two connecting bridges (6) are provided, the included angle between the two connecting bridges (6) is 180°; when four connecting bridges (6) are provided, the included angle between any two adjacent connecting bridges (6) is 90°.

6. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 4, characterized in that, The middle layer radiator (5) is a stacked cylindrical resonator, and its diameter is the diameter of the upper layer radiator (4) plus the length of the two connecting bridges (6).

7. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 1, characterized in that, The impedance matching circuit (10) consists of a gradient microstrip line, an H-shaped microstrip line and four L-shaped microstrip lines; wherein, the gradient microstrip line is connected to the horizontal side of the H-shaped microstrip line, and the four ends of the H-shaped microstrip line are respectively connected to an L-shaped microstrip line; each L-shaped microstrip line has two PIN diodes (12) on both sides of its end.

8. A polarization-reconfigurable millimeter-wave circularly polarized dielectric resonant antenna according to claim 7, characterized in that, The radio frequency feed network (9) is a rectangular microstrip line, and the radio frequency feed network (9) is connected to the tapered microstrip line of the impedance matching circuit (10).

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