一种使磁斯格明子有序产生和定向运动的结构和方法

By controlling the deformation characteristics of the piezoelectric material layer with linear electrodes, the magnetic skyrmions are made to produce periodic wave deformation on the heavy metal-magnetic material layer. This solves the problem of lateral deflection of the magnetic skyrmions, realizes orderly arrangement and directional movement, and improves information reading speed and storage capacity.

CN117082960BActive Publication Date: 2026-07-17ZHEJIANG LAB +1

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHEJIANG LAB
Filing Date
2023-08-21
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing technologies struggle to effectively suppress the lateral deflection of magnetic skyrmions, especially during long-distance transmission in confined spaces. The annihilation phenomenon caused by the Hall effect limits their speed and the stability of information reading, and antiferromagnetic coupled thin-film systems are difficult to achieve reliable electrical reading.

Method used

By controlling the deformation characteristics of the piezoelectric material layer with linear electrodes, periodic positive and negative alternating wave deformation is generated on the heavy metal-magnetic material layer, realizing the orderly arrangement and directional movement of magnetic skyrmions. The deformation is transmitted by the inverse piezoelectric effect to control the trajectory of the magnetic skyrmions.

Benefits of technology

It achieves the ordered arrangement and directional movement of magnetic skyrmions, improves the speed and stability of information reading, enhances the density and storage capacity of storage units, and is suitable for highly integrated electronic devices.

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Abstract

本发明公开了一种使磁斯格明子有序产生和定向运动的结构和方法。该结构包括提供电压的电源和线状电极,提供电致形变的压电材料层,提供绝缘功能的绝缘材料层,提供产生斯格明子拓扑结构的重金属‑磁性材料层。在压电材料层上下两面制备等间距线状电极,调控电压方向使压电材料层线状电极处产生垂直方向正负交替变换的幅值相同的形变,并传递到重金属‑磁性材料层。本发明公开的方法利用该结构实现磁斯格明子产生有序排列结构,并在驱动力作用下定向运动,有效对抗因斯格明子霍尔效应产生的横向偏转。本发明能提高信息读取速度和稳定性及存储容量,其小尺寸适用于电子器件的集成化,在存储器件、逻辑器件、类脑器件等领域具有潜在的应用前景。
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