Light emitting chip manufacturing method and light emitting chip

Abstract

The application discloses a light emitting chip manufacturing method, which comprises the following steps: growing an epitaxial layer of a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light emitting layer and a P-type layer on a growth substrate to obtain a light emitting structure, wherein the first doping concentration is greater than the second doping concentration; stripping the growth substrate to expose the first N-type layer; making the first N-type layer and an electrolyte undergo an electrochemical reaction to form a plurality of holes in the first N-type layer, wherein the second N-type layer with the second doping concentration does not undergo the electrochemical reaction with the electrolyte during the electrochemical reaction of the first N-type layer with the first doping concentration and the electrolyte, so that the second N-type layer can be used as a normal N-type semiconductor layer of the light emitting chip; and filling a color conversion material in the plurality of holes. The application integrates the color conversion material and the chip structure, is higher in integration, simpler in manufacturing process and lower in cost.

Description

Technical Field

[0001] This invention relates to the field of display technology, and specifically to a method for manufacturing a light-emitting chip and the light-emitting chip itself. Background Technology

[0002] Micro-LEDs, characterized by high brightness, fast response, and long lifespan, are considered the ultimate form of display products. AlGaInP red LED chips, however, are expensive due to their complex manufacturing process. Quantum dot materials, on the other hand, possess excellent photoluminescence stability, narrow half-maximum width at half-maximum (FWHM), and wide color gamut. Using blue LEDs to excite quantum dots to generate red light offers significant economic and technological advantages. Furthermore, their stable emission wavelength greatly improves chip utilization and further reduces costs.

[0003] In existing technologies, a quantum dot color conversion structure is fixedly disposed on the light-emitting surface of a blue light chip. The quantum dots in the color conversion structure convert the blue light emitted by the blue light chip into red light. However, it is difficult to ensure the stability of the combination between the color conversion structure and the blue light chip, which affects the light color conversion effect and lifespan. Summary of the Invention

[0004] The purpose of this invention is to provide a method for manufacturing light-emitting chips that is simple in process and low in cost, as well as a light-emitting chip manufactured using this method.

[0005] To achieve the above objectives, the present invention provides a method for manufacturing a light-emitting chip, comprising: A light-emitting structure is provided, the light-emitting structure comprising a growth substrate and a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light-emitting layer, and a P-type layer sequentially stacked on the growth substrate, wherein the first doping concentration is greater than the second doping concentration, the first N-type layer with the first doping concentration can undergo an electrochemical reaction with an electrolyte, and when the first N-type layer with the first doping concentration undergoes an electrochemical reaction with the electrolyte, the second N-type layer with the second doping concentration does not undergo an electrochemical reaction with the electrolyte; The growth substrate is peeled off to expose the first N-type layer; The first N-type layer is placed in the electrolyte and an electric current is applied to cause an electrochemical reaction between the first N-type layer and the electrolyte, thereby forming multiple pores in the first N-type layer. A color-conversion material is filled into the plurality of holes to obtain a light-emitting chip, wherein the color-conversion material is used to convert the excitation light emitted by the light-emitting structure from a first light color to a second light color.

[0006] In some embodiments, the first N-type layer and the second N-type layer are N-type GaN layers, and the first doping concentration and the second doping concentration are the silicon doping concentrations in the first N-type layer and the second N-type layer, respectively.

[0007] In some embodiments, the electrolyte is an acidic electrolyte.

[0008] In some embodiments, the light-emitting structure further includes a buffer layer grown between the growth substrate and the first N-type layer.

[0009] In some embodiments, providing a light-emitting structure includes: growing the buffer layer on a growth substrate using a metal-organic chemical vapor deposition (MOCVD); growing a first N-type layer on the side of the buffer layer opposite to the growth substrate using MOCVD; growing a second N-type layer on the side of the first N-type layer opposite to the buffer layer using MOCVD; growing the light-emitting layer on the side of the second N-type layer opposite to the first N-type layer using MOCVD; and growing a P-type layer on the side of the light-emitting layer opposite to the second N-type layer using MOCVD.

[0010] In some embodiments, the growth substrate is positioned away from the substrate, the light-emitting structure is fixed on the substrate, and then the growth substrate is peeled off; before fixing the light-emitting structure on the substrate, the method further includes: forming a P-electrode on the side of the P-type layer away from the light-emitting layer.

[0011] In some embodiments, the substrate is a metal substrate or a substrate with metal pads; fixing the light-emitting structure on the substrate includes: welding the P electrode to the metal structure on the substrate.

[0012] In some embodiments, after filling the plurality of holes with a color-conversion material, the method further includes: forming an insulating protective layer that covers the first N-type layer.

[0013] In some embodiments, the method for fabricating a light-emitting chip further includes: fabricating an N-electrode on the side of the second N-type layer facing the first N-type layer; the N-electrode includes a first conductive portion and a second conductive portion that are electrically connected, the first conductive portion being electrically connected to the second N-type layer, the second conductive portion protruding from the insulating protective layer, and the end face area of ​​the second conductive portion for electrical connection with an external electronic device being larger than the end face area of ​​the first conductive portion.

[0014] In some embodiments, the step of fabricating an N-electrode on the side of the second N-type layer facing the first N-type layer includes: fabricating the first conductive portion in the second N-type layer before fabricating an insulating protective layer; after fabricating the insulating protective layer, opening a hole in the insulating protective layer to expose the first conductive portion; and fabricating the second conductive portion on the first conductive portion.

[0015] To achieve the above objectives, the present invention also provides a light-emitting chip, which is manufactured using the light-emitting chip manufacturing method described above.

[0016] The method for fabricating a light-emitting chip provided by this invention involves growing an epitaxial layer on a growth substrate, comprising a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light-emitting layer, and a P-type layer, which are gradually moved away from the growth substrate and stacked sequentially, to obtain a light-emitting structure. The first doping concentration is greater than the second doping concentration, and the first N-type layer with the first doping concentration can undergo an electrochemical reaction with an electrolyte. The growth substrate is then peeled off to expose the first N-type layer. The first N-type layer is then placed in an electrolyte and energized, causing an electrochemical reaction between the first N-type layer and the electrolyte, thereby forming multiple pores in the first N-type layer. During the electrochemical reaction between the first N-type layer with the first doping concentration and the electrolyte, the second N-type layer with the second doping concentration does not react with the electrolyte. Therefore, the second N-type layer can serve as the normal N-type semiconductor layer of the light-emitting chip. Then, color conversion material is filled into multiple pores to convert the excitation light generated by the light-emitting structure from the first color to the second color. This method is applicable to fabricating complex light-emitting chips using existing technologies, such as red and green chips, using a light-emitting structure with a simple fabrication process, thereby simplifying the fabrication process and saving costs. Furthermore, this invention integrates the color conversion material and the chip structure, resulting in higher integration. In addition, the etched first N-type layer has a porous structure, which enhances the scattering of the excitation light, increases the optical path, and significantly improves the absorption efficiency of the color conversion material for the excitation light, reducing the leakage of the first color and thus improving color purity. Attached Figure Description

[0017] Figures 1 to 15 This is a schematic diagram of the process of fabricating a light-emitting chip according to an embodiment of the present invention; Figure 16 This is a schematic diagram of a light-emitting chip manufactured according to an embodiment of the present invention; Figure 17 This is a schematic diagram showing the relationship between the doping concentration of the first N-type layer and the voltage required to apply current when the electrolyte is oxalic acid. Detailed Implementation

[0018] To explain in detail the content, structural features, objectives, and effects of this invention, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0019] The technical solutions of the embodiments of the present invention will be described in detail below with reference to the accompanying drawings: Please see Figures 1 to 15 An embodiment of the present invention provides a method for manufacturing a light-emitting chip, including the following steps S1 to S10.

[0020] S1, an epitaxial layer 2 is grown on the growth substrate 1. The epitaxial layer 2 includes a buffer layer 21, an undoped layer 22, a first N-type layer 23 with a first doping concentration, a second N-type layer 24 with a second doping concentration, a light-emitting layer 25, and a P-type layer 26, which are gradually stacked away from the growth substrate 1, to obtain a light-emitting structure that can generate excitation light, such as... Figure 3 As shown. The first doping concentration is greater than the second doping concentration. The first N-type layer with the first doping concentration can undergo an electrochemical reaction with the electrolyte. When the first N-type layer with the first doping concentration undergoes an electrochemical reaction with the electrolyte, the second N-type layer with the second doping concentration does not undergo an electrochemical reaction with the electrolyte.

[0021] Among them, the growth substrate 1 can be, for example, a sapphire substrate, a gallium nitride substrate, etc., and the buffer layer 21, the undoped layer 22, the first N-type layer 23, the second N-type layer 24, the light-emitting layer 25, the P-type layer 26, etc. can all be, for example, gallium nitride (GaN) layers.

[0022] Among them, the light-emitting layer 25 is an MQW layer (multiple quantum well layer).

[0023] When growing the epitaxial layer 2 on the growth substrate 1, firstly, a buffer layer 21 is grown on the growth substrate 1; then, an undoped layer 22 (e.g., ...) is grown on the side of the buffer layer 21 facing away from the growth substrate 1. Figure 1 (As shown); Next, a first N-type layer 23 is grown on the side of the undoped layer 22 facing away from the buffer layer 21; Next, a second N-type layer 24 is grown on the side of the first N-type layer 23 facing away from the undoped layer 22 (as shown). Figure 2 (As shown); then, a light-emitting layer 25 is grown on the side of the second N-type layer 24 facing away from the first N-type layer 23; finally, a P-type layer 26 is grown on the side of the light-emitting layer 25 facing away from the N-type layer 24. At this point, a light-emitting structure is obtained. This light-emitting structure is a light-emitting structure without electrodes, as shown. Figure 3 As shown.

[0024] In one embodiment, a buffer layer 21 is grown on a growth substrate 1 using metal-organic chemical vapor deposition (MOCVD); an undoped layer 22 is grown on the side of the buffer layer 21 facing away from the growth substrate 1 using MOCVD; a first N-type layer 23 is grown on the side of the undoped layer 22 facing away from the buffer layer 21 using MOCVD; a second N-type layer 24 is grown on the side of the first N-type layer 23 facing away from the undoped layer 22 using MOCVD; a light-emitting layer 25 is grown on the side of the second N-type layer 24 facing away from the first N-type layer 23 using MOCVD; and a P-type layer 26 is grown on the side of the light-emitting layer 25 facing away from the second N-type layer 24 using MOCVD.

[0025] Of course, in some embodiments, a buffer layer 21, an undoped layer 22, a first N-type layer 23, and a second N-type layer 24 can be sequentially grown on the growth substrate 1 using, for example, hydride vapor phase epitaxy (HVPE), while a light-emitting layer 25 and a P-type layer 26 can be grown using metal-organic chemical vapor deposition (MOCVD). Alternatively, a buffer layer 21 and an undoped layer 22 can be sequentially grown on the growth substrate 1 using, for example, hydride vapor phase epitaxy (HVPE), while a first N-type layer 23, a second N-type layer 24, a light-emitting layer 25, and a P-type layer 26 can be grown using MOCVD.

[0026] In the above embodiment, before growing the first N-type layer 22, a buffer layer 21 is first grown on the growth substrate 1. Then, an undoped layer 22 is grown on the side of the buffer layer 21 facing away from the growth substrate 1. Subsequently, a first N-type layer 23, a second N-type layer 24, a light-emitting layer 25, and a P-type layer 26 are sequentially grown on the side of the undoped layer 22 facing away from the buffer layer 21. The buffer layer 21 can alleviate the thermal stress between the other layers and the growth substrate 1. The undoped layer 22 can obtain a flatter plane, making the grown first N-type layer 23 more flat.

[0027] Of course, in some embodiments, the buffer layer 21 and / or the undoped layer 22 may not be grown. For example, after the buffer layer 21 is grown on the growth substrate 1, the first N-type layer 23 is grown directly on the side of the buffer layer 21 facing away from the growth substrate 1. Another example is that the first N-type layer 23 is grown directly on the growth substrate 1.

[0028] S2, a P-electrode 27 is fabricated on the side of the P-type layer 26 facing away from the light-emitting layer 25, thus obtaining a light-emitting structure with the P-electrode 27, as shown below. Figure 4 As shown.

[0029] A conductive metal layer can be deposited on the side of the P-type layer 26 facing away from the light-emitting layer 25 by means of methods such as vapor deposition, to serve as the P electrode 27. The P electrode 27 can consist of one layer of metal or multiple layers of metal. The P electrode 27 can be a single metal, such as one of Au, Sn, Cr, Al, Ti, Mo, etc., or it can be a eutectic alloy formed by multiple metals.

[0030] S3, move the growth substrate 1 away from the substrate 3, and fix the light-emitting structure with the P electrode 27 on the substrate 3, such as Figure 5 As shown; then, the growth substrate 1, buffer layer 21, and undoped layer 22 are removed to expose the first N-type layer 23, as shown. Figure 6 As shown.

[0031] In this process, substrate 3 is a metal substrate or a substrate with metal pads. When the light-emitting structure with P electrode 27 is fixed on substrate 3, the P electrode 27 is soldered to the metal structure on substrate 3. The light-emitting chip obtained through subsequent steps S4-S10 uses the metal structure on substrate 3 as an external pin. By connecting the metal structure of substrate 3 of the light-emitting chip to external electronic devices, such as circuit boards, the P electrode 27 of the light-emitting chip is electrically connected to the external electronic devices.

[0032] The growth substrate 1 can be peeled off using laser lift-off technology, and then the buffer layer 21 and the undoped layer 22 can be removed using dry etching technology. This results in an epitaxial structure exposing the first N-type layer 23 after removing the growth substrate 1, buffer layer 21, and undoped layer 22. A schematic diagram of this epitaxial structure after adjusting its orientation is shown below. Figure 7 As shown.

[0033] S4, Etching Figure 7 The epitaxial structure shown forms multiple cores connected by substrate 3, resulting in the structure as follows: Figure 8 As shown.

[0034] By dividing the epitaxial structure into multiple cores in advance, compared to etching and dividing after filling the color conversion material 5, damage to the color conversion material 5 during the etching process can be avoided.

[0035] S5, the first N-type layer 23 is placed in the electrolyte and an electric current is applied, causing the first N-type layer 23 to undergo an electrochemical reaction with the electrolyte, thereby forming multiple pores 4 in the first N-type layer 23, such as... Figure 9 As shown. During the electrochemical reaction between the first N-type layer 23 and the electrolyte, the second N-type layer 24 with the second doping concentration does not undergo an electrochemical reaction with the electrolyte. Therefore, the second N-type layer 24 can serve as the normal N-type layer of the light-emitting chip.

[0036] In this embodiment, pores 4 are nanoscale pores with an irregular structure and are numerous. The electrolyte is an acidic electrolyte. The electrolyte can be oxalic acid electrolyte, HF electrolyte, HCl electrolyte, etc. In other embodiments, the electrolyte can be a basic electrolyte, such as KOH.

[0037] In one embodiment, the first N-type layer 23 and the second N-type layer 24 are N-type GaN layers, and the first doping concentration and the second doping concentration are the silicon doping concentrations in the first N-type layer 23 and the second N-type layer 24, respectively. Silicon (Si) can undergo electrochemical reactions and has good stability. Doping silicon (Si) can balance the effects of GaN epitaxial processing and electrochemical reactions.

[0038] The relationship between the doping concentration of the first N-type layer 23 and the voltage required to be applied during energization is as follows: Figure 17 As shown, the doping concentration of the first N-type layer 23 and the voltage applied during energization must fall within region S. Furthermore, if the voltage applied during energization is within region S, the doping concentration of the second N-type layer 24 must fall within the lower left region of region S. By controlling the doping concentration of the first N-type layer 23 and the voltage applied during energization, the porosity and pore size of the pore 4 can be controlled. In some embodiments, the doping concentration of the first N-type layer 23 is 1*10¹⁹ to 1*10²⁰ per cubic centimeter, and the energizing voltage is 2V to 5V. The doping concentration of the second N-type layer 24 is less than 5*10¹⁸ per cubic centimeter.

[0039] S6, etch away part of the first N-type layer 23 to expose the second N-type layer 24, as shown. Figure 10 As shown; then, a first conductive portion 281 of the N-electrode 28 is fabricated on the exposed portion of the structure of the second N-type layer 24, as shown. Figure 11 As shown.

[0040] A conductive metal layer can be deposited on the exposed portion of the second N-type layer 24 by means of methods such as vapor deposition, to serve as the first conductive portion 281 of the N-electrode 28. The first conductive portion 281 of the N-electrode 28 can consist of one layer of metal or multiple layers of metal. The first conductive portion 281 can be one of the following metals: Au, Sn, Cr, Al, Ti, Mo, etc., or it can be a eutectic alloy formed of multiple metals.

[0041] S7, fill the multiple holes 4 with color conversion material 5, such as Figure 12 As shown, the color conversion material 5 is used to convert the excitation light emitted by the light-emitting structure from the first light color to the second light color.

[0042] The color-conversion material 5 can be any material that can fill the pores 4 and convert the first light color into the second light color, such as quantum dots, phosphors, etc. The second light color and the first light color are not limited to a specific light color. In some embodiments, the second light color is red light and the first light color is blue light; in some embodiments, the second light color can be red light and the first light color can be green light, etc. The second light color can also be any light color other than red light.

[0043] The color conversion material 5 can be filled by methods such as IJP (Ink jet printing), EHD (Electro-hydroDynamic jet printing), SIJ (Super-fine inkjet printing), Spin-coating, Aerosol Jet, or Spray.

[0044] S8, the surface of the structure obtained in step S7 is covered with an insulating protective layer 6. The insulating protective layer 6 covers the first conductive portion 281 of the N electrode 28, the first N-type layer 23, and the sides of each core particle, such as... Figure 13 As shown. The insulating protective layer 6 can isolate water vapor and oxygen from contact with the color conversion material 5, and at the same time, it can prevent the manufactured light-emitting chip from leaking electricity.

[0045] The insulating protective layer 6 can be obtained by ALD (Atomic layer deposition) and / or CVD (Chemical Vapor Deposition). The insulating protective layer 6 can be, for example, a SiN insulating protective layer, a SiO insulating protective layer, an AlO insulating protective layer, an AlN insulating protective layer, etc. The insulating protective layer 6 can be a single-layer structure or a multi-layer structure. The multi-layer structure can be a multi-layer structure of different materials, as long as it can effectively isolate water vapor and oxygen to protect the color conversion material 5 and is non-conductive.

[0046] S9, an opening is made in the insulating protective layer 6 to expose the first conductive part 281, such as Figure 14 As shown; then, a second conductive portion 282 is fabricated on the first conductive portion 281, and the second conductive portion 282 and the first conductive portion 281 constitute the N electrode 28, as shown. Figure 15 As shown. The second conductive part 282 protrudes from the insulating protective layer 6. The end face area of ​​the second conductive part 282 used for electrical connection is larger than the end face area of ​​the first conductive part 281, so as to facilitate subsequent welding and fixing with external electronic devices.

[0047] A conductive metal layer may be deposited on the first conductive portion 281 by means such as vapor deposition to serve as the second conductive portion 282. The second conductive portion 282 may consist of one layer of metal or multiple layers of metal. The second conductive portion 282 may be one of the metals such as Au, Sn, Cr, Al, Ti, Mo, etc., or it may be a eutectic alloy formed of multiple metals.

[0048] S10, the obtained light-emitting structure filled with colored conversion material 5 is thinned and then split open to obtain a single light-emitting chip. In some embodiments, the obtained light-emitting chip is as follows: Figure 16 As shown.

[0049] like Figure 16 As shown, the light-emitting chip includes an insulating protective layer 101, a first N-type layer 102, a second N-type layer 103, a light-emitting layer 104, a P-type layer 105, a P-electrode 106, a substrate 107, and an N-electrode 108. The first N-type layer 102, the second N-type layer 103, the light-emitting layer 104, the P-type layer 105, the P-electrode 106, and the substrate 107 are arranged sequentially from top to bottom. The first N-type layer 102 is provided with a color conversion material 5, which converts the excitation light emitted by the chip structure into other colors. The N-electrode 108 is disposed on the second N-type layer 103 and includes a first conductive portion 1081 electrically connected to the second N-type layer 103 and a second conductive portion 1082 electrically connected to the first conductive portion 1081. The insulating protective layer 101 covers the first N-type layer 102, the second N-type layer 103, the light-emitting layer 104, the P-type layer 105, and the P-electrode 106. The insulating protective layer 101 has an opening at the position opposite to the first conductive part 1081, and the second conductive part 1082 protrudes from the insulating protective layer 101. The second conductive part 1082 has a larger connection end face than the first conductive part 1081, so as to better connect and fix it with external electronic devices, etc.

[0050] exist Figure 16 In the embodiment shown, the opening of the insulating protective layer 101 is conical, and the second conductive part 1082 includes a conical part 10821 disposed in the opening and a rectangular part 10822 protruding from the insulating protective layer 101. The end face area of ​​the conical part 10821 near the first conductive part 1081 is smaller than the end face area near the rectangular part 10822.

[0051] In the above Figures 1-15In the illustrated embodiment, a P-electrode 27 is first fabricated on the side of the P-type layer 26 facing away from the light-emitting layer 25, and then the light-emitting structure with the P-electrode 27 is fixed onto the substrate 3. In other embodiments, the light-emitting structure without the P-electrode 27 can be directly fixed onto the substrate 3, and the P-electrode 27 can be fabricated in a subsequent step. Similarly, the epitaxial structure can be skipped initially; that is, after performing step S3, step S4 can be skipped, and step S5 can be directly performed to conduct an electrochemical reaction to form multiple holes 4 in the first N-type layer 23. Similarly, step S6 can be skipped, and after forming multiple holes 4 in the first N-type layer 23, step S7 can be directly performed to fill the color conversion material 5.

[0052] In some embodiments, some steps may be omitted, for example, steps S8-S9 may not be performed.

[0053] In the above embodiments, the light-emitting structure can be a wafer that can be cut to form multiple light-emitting chips. In other embodiments, the light-emitting structure can also be a structure corresponding to the fabrication of a single light-emitting chip.

[0054] In summary, the method for fabricating a light-emitting chip provided by the present invention involves growing an epitaxial layer 2 on a growth substrate 1, comprising a first N-type layer 23 with a first doping concentration gradually moving away from the growth substrate 1 and sequentially stacked, a second N-type layer 24 with a second doping concentration, a light-emitting layer 25, and a P-type layer 26, to obtain a light-emitting structure. The first doping concentration is greater than the second doping concentration, and the first N-type layer 23 with the first doping concentration can undergo an electrochemical reaction with the electrolyte. Then, the growth substrate 1 is moved away from the substrate 3, the light-emitting structure is fixed on the substrate 3, and the growth substrate 1 is peeled off to expose the first N-type layer 23. Then, the first N-type layer 23 is placed in the electrolyte and energized, causing the first N-type layer 23 to react electrochemically with the electrolyte. A chemical reaction occurs, forming multiple pores 4 in the first N-type layer 23. During the electrochemical reaction between the first N-type layer 23 (with a first doping concentration) and the electrolyte, the second N-type layer 24 (with a second doping concentration) does not react electrochemically with the electrolyte. Therefore, the second N-type layer 24 can serve as the normal N-type semiconductor layer of the light-emitting chip. Then, a color conversion material 5 is filled into the multiple pores 4. This material converts the excitation light generated by the light-emitting structure from a first color to a second color, making it suitable for fabricating complex light-emitting chips using existing technologies, such as red and green chips, with a simple fabrication process, thus simplifying the manufacturing process and saving costs. Furthermore, this invention integrates the color conversion material 5 with the chip structure, resulting in higher integration and easier integration into mainstream traditional light-emitting chip processes, reducing unnecessary costs associated with new process implementation. Simultaneously, using the color conversion material 5 as the light-emitting medium reduces wavelength drift, covering a wide range of blue light and improving the utilization rate of the light-emitting structure. Furthermore, the etched first N-type layer 23 has a porous structure, which can improve the scattering of excitation light, increase the optical path, and greatly improve the absorption efficiency of the color conversion material 5 for excitation light, reducing blue light leakage and thus improving color purity. In addition, the color conversion material 5 is encapsulated and protected by an insulating protective layer set by normal chip manufacturing process, which improves process efficiency and display reliability.

[0055] The above-disclosed examples are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are within the scope of the present invention.

Claims

1. A method for manufacturing a light-emitting chip, characterized in that, include: A light-emitting structure is provided, the light-emitting structure comprising a growth substrate and a first N-type layer with a first doping concentration, a second N-type layer with a second doping concentration, a light-emitting layer, and a P-type layer sequentially stacked on the growth substrate, wherein the first doping concentration is greater than the second doping concentration, the first N-type layer with the first doping concentration can undergo an electrochemical reaction with an electrolyte, and when the first N-type layer with the first doping concentration undergoes an electrochemical reaction with the electrolyte, the second N-type layer with the second doping concentration does not undergo an electrochemical reaction with the electrolyte; The growth substrate is peeled off to expose the first N-type layer; The first N-type layer is placed in the electrolyte and an electric current is applied to cause an electrochemical reaction between the first N-type layer and the electrolyte, thereby forming multiple pores in the first N-type layer. A color-conversion material is filled into the plurality of holes to obtain a light-emitting chip, wherein the color-conversion material is used to convert the excitation light emitted by the light-emitting structure from a first light color to a second light color.

2. The method for manufacturing a light-emitting chip as described in claim 1, characterized in that, The first N-type layer and the second N-type layer are N-type GaN layers, and the first doping concentration and the second doping concentration are the silicon doping concentrations in the first N-type layer and the second N-type layer, respectively.

3. The method for manufacturing a light-emitting chip as described in claim 1, characterized in that, The electrolyte is an acid-based electrolyte.

4. The method for manufacturing a light-emitting chip as described in claim 1, characterized in that, The light-emitting structure further includes a buffer layer, which is grown between the growth substrate and the first N-type layer.

5. The method for manufacturing a light-emitting chip as described in claim 4, characterized in that, A light-emitting structure is provided, comprising: The buffer layer was grown on the growth substrate using a metal-organic chemical vapor deposition method. The first N-type layer is grown on the side of the buffer layer away from the growth substrate using a metal-organic chemical vapor deposition method. The second N-type layer is grown on the side of the first N-type layer away from the buffer layer using a metal-organic chemical vapor deposition method. The light-emitting layer is grown on the side of the second N-type layer opposite to the first N-type layer using a metal-organic chemical vapor deposition method. The P-type layer is grown on the side of the light-emitting layer opposite to the second N-type layer using a metal-organic chemical vapor deposition method.

6. The method for manufacturing a light-emitting chip as described in claim 1, characterized in that, The growth substrate is positioned away from the substrate, the light-emitting structure is fixed on the substrate, and then the growth substrate is peeled off. Before fixing the light-emitting structure onto the substrate, the method further includes: A P-electrode is fabricated on the side of the P-type layer opposite to the light-emitting layer.

7. The method for manufacturing a light-emitting chip as described in claim 6, characterized in that, The substrate is a metal substrate or a substrate with metal pads. The step of fixing the light-emitting structure onto the substrate includes: The P electrode is welded and fixed to the metal structure on the substrate.

8. The method for manufacturing a light-emitting chip as described in any one of claims 1 to 7, characterized in that, After filling the plurality of pores with color-conversion material, the process further includes: An insulating protective layer is fabricated, which covers the first N-type layer.

9. The method for manufacturing a light-emitting chip as described in claim 8, characterized in that, Also includes: An N-electrode is formed on the side of the second N-type layer facing the first N-type layer; the N-electrode includes a first conductive portion and a second conductive portion that are electrically connected, the first conductive portion being electrically connected to the second N-type layer, the second conductive portion protruding from the insulating protective layer, and the end face area of ​​the second conductive portion for electrical connection with external electronic devices being larger than the end face area of ​​the first conductive portion.

10. The method for manufacturing a light-emitting chip as described in claim 9, characterized in that, The step of fabricating an N-electrode on the side of the second N-type layer facing the first N-type layer includes: Before fabricating the insulating protective layer, the first conductive portion is fabricated in the second N-type layer; After the insulating protective layer is fabricated, an opening is made in the insulating protective layer to expose the first conductive portion; The second conductive portion is fabricated on the first conductive portion.

11. A light-emitting chip, characterized in that, The light-emitting chip is manufactured using the light-emitting chip manufacturing method as described in any one of claims 1-10.

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