电源选择开关电路、芯片及射频前端模组
By using an N-type field-effect transistor in the power selection switch and combining it with a boost circuit to control its gate voltage, the problem that the power selection switch in the prior art cannot simultaneously meet the requirements of low on-resistance and low parasitic capacitance when the power supply changes is solved, thereby improving the efficiency and applicability of the power amplifier.
CN117118422BActive Publication Date: 2026-07-17RADROCK (SHENZHEN) TECH CO LTD
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- RADROCK (SHENZHEN) TECH CO LTD
- Filing Date
- 2023-09-19
- Publication Date
- 2026-07-17
Smart Images
Figure CN117118422B_ABST
Abstract
本申请公开了一种电源选择开关电路、芯片及射频前端模组，其中，电源选择开关电路包括电源选择开关和升压电路，电源选择开关为N型场效应管，其漏极用于接收电源电压，源极用于连接功率放大器，并在导通时通过电源电压为功率放大器供电；升压电路的输入端用于接收电源电压，输出端连接N型场效应管的栅极，升压电路用于将接收的电源电压抬升预设幅值后输出；预设幅值大于N型场效应管的导通阈值电压，且小于N型场效应管的耐压值的1.1倍。本申请采用N型场效应管作为电源选择开关，具有较小的寄生电容，通过升压电路控制N型场效应管的栅漏极电压差在预设范围内，使N型场效应管具有很小的导通电阻，从而同时满足小导通电阻和小寄生电容的需求。
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