温度补偿方法、控制方法及温度调整系统

By heating the wafer with constant power in a semiconductor processing device and periodically probing the temperature, and calculating the slope ratio or slope function as a compensation factor, the problem of temperature measurement fluctuation caused by uneven reflectivity and thickness of the substrate surface is solved, and stable temperature control and anomaly identification within ±1℃ are achieved.

CN117119621BActive Publication Date: 2026-07-17WUXI LEADPRO TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
WUXI LEADPRO TECH CO LTD
Filing Date
2023-08-23
Publication Date
2026-07-17

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Abstract

本申请实施例公开了提供一种温度补偿方法、控制方法及温度调整系统，所述温度补偿方法通过双色测温仪以周期性的探测路径探测待测件的表面温度，获取在恒定加热功率下的至少一个周期性探测路径内的待测件表面的温度数据组，根据所获取的温度数据组计算得到至少一个周期性探测路径内的各个探测点相对于参考点的坡度的值或坡度函数的变化值作为各个探测点的坡度的值或坡度函数的补偿因子，在当前功率下加热待测件时，根据该补偿因子补偿在当前探测点的实测温度值，从而将待测件的表面温度的输出值的波动范围控制在±1℃内，以便于加热的控制和温度异常的识别。
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