Reducing agent for atomic layer deposition

By using specific reducing agents such as group IV heterocyclic compounds and free radical initiators, the problem of removing halogen impurities from metal films has been solved, resulting in high-purity metal films suitable for the high aspect ratio structures of modern microelectronic devices.

CN117120664BActive Publication Date: 2026-07-03APPLIED MATERIALS INC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
APPLIED MATERIALS INC
Filing Date
2022-02-15
Publication Date
2026-07-03

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Abstract

Methods of forming metal films with metal halides using reducing agents are disclosed. The reducing agent, the reducing agent includes a heterocyclic compound containing a Group IV element, a radical initiator, an alkylaluminum hydride, a diborane species, and / or a Sn(II) compound.
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