Gas supply system, substrate processing apparatus, and method for operating a gas supply system

Abstract

A gas supply system disclosed in the present invention is provided with a gas supply line and a gas recovery line. The gas supply line supplies heat transfer gas to a gap between a substrate support section and a back surface of a substrate. The gas supply line includes a first section, a second section, a third section, and a pressure controller. The second section is located on a downstream side with respect to the first section. The pressure controller is configured to adjust a pressure of the heat transfer gas, and is connected between the first section and the second section. The third section connects the second section and the gap. The gas recovery line is connected to the first section and the second section. The gas recovery line includes a pump connected between the first section and the second section. The gas recovery line shares the third section with the gas supply line. The gas recovery line returns the heat transfer gas from the second section to the first section.

Description

Technical Field

[0001] Exemplary embodiments of this disclosure relate to a gas supply system, a substrate processing apparatus, and a method of operating the gas supply system. Background Technology

[0002] A substrate processing apparatus is used for processing substrates. Patent Document 1 below discloses a plasma processing apparatus as one type of substrate processing apparatus. The plasma processing apparatus includes a chamber and a stage. The stage is disposed within the chamber. The stage is configured to support a substrate placed thereon. To facilitate heat exchange between the stage and the substrate, the plasma processing apparatus is configured to supply a heat transfer gas to the gap between the stage and the substrate.

[0003] Previous technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2015-41451 Summary of the Invention

[0006] The technical problem to be solved by the invention

[0007] This disclosure provides a technique for suppressing the consumption of heat transfer gases.

[0008] means for solving technical problems

[0009] In one exemplary embodiment, a gas supply system is provided. The gas supply system includes a gas supply line and a gas recovery line. The gas supply line is configured to supply heat transfer gas to a gap between a substrate support and the back surface of a substrate. The gas supply line includes a first portion, a second portion, a third portion, and a pressure controller. The second portion is located downstream of the first portion. The pressure controller is configured to adjust the pressure of the heat transfer gas and is connected between the first and second portions. The third portion connects the second portion and the aforementioned gap. The gas recovery line is connected to the first and second portions. The gas recovery line includes a pump connected between the first and second portions. The gas recovery line shares the third portion with the gas supply line. The gas recovery line is configured to return heat transfer gas from the second portion to the first portion.

[0010] Invention Effects

[0011] According to an exemplary embodiment, the consumption of heat transfer gas can be suppressed. Attached Figure Description

[0012] Figure 1 This is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment.

[0013] Figure 2This is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment.

[0014] Figure 3 This is a diagram illustrating a gas supply system according to an exemplary embodiment.

[0015] Figure 4 This is a schematic diagram illustrating the gas supply sequence of an exemplary embodiment.

[0016] Figure 5 This is a schematic diagram illustrating a gas stop sequencing according to an exemplary embodiment.

[0017] Figure 6 This is a diagram illustrating a gas supply system according to another exemplary embodiment.

[0018] Figure 7 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment.

[0019] Figure 8 This is a schematic diagram illustrating the gas supply sequence of another exemplary embodiment.

[0020] Figure 9 This is a schematic diagram illustrating a gas stop sequencing method according to another exemplary embodiment.

[0021] Figure 10 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment.

[0022] Figure 11 This is a schematic diagram illustrating the gas supply sequence of yet another exemplary embodiment.

[0023] Figure 12 This is a schematic diagram illustrating a gas stopping sorting in yet another exemplary embodiment.

[0024] Figure 13 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment.

[0025] Figure 14 This is a schematic diagram illustrating the gas supply sequence of yet another exemplary embodiment.

[0026] Figure 15 This is a schematic diagram illustrating a gas stopping sorting in yet another exemplary embodiment.

[0027] Figure 16 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment. Detailed Implementation

[0028] The following describes various exemplary embodiments.

[0029] In one exemplary embodiment, a gas supply system is provided. The gas supply system includes a gas supply line and a gas recovery line. The gas supply line is configured to supply heat transfer gas to a gap between a substrate support and the back surface of a substrate. The gas supply line includes a first portion, a second portion, a third portion, and a pressure controller. The second portion is located downstream of the first portion. The pressure controller is configured to adjust the pressure of the heat transfer gas and is connected between the first and second portions. The third portion connects the second portion and the aforementioned gap. The gas recovery line is connected to the first and second portions. The gas recovery line includes a pump connected between the first and second portions. The gas recovery line shares the third portion with the gas supply line. The gas recovery line is configured to return heat transfer gas from the second portion to the first portion.

[0030] According to the above embodiment, the heat transfer gas supplied to the gap between the substrate support and the back surface of the substrate is returned to the first part of the gas supply pipeline for reuse. Therefore, the consumption of heat transfer gas is suppressed. Furthermore, the gas supply pipeline and the gas recovery pipeline share the third part, and the heat transfer gas returns from the second part connected to the third part to the first part. Therefore, unexpected pressure increases in the third part and the gap can be suppressed.

[0031] In one exemplary embodiment, the gas recovery pipeline may further include: a gas flow path connected between the second part and the pump; and a throttling orifice reducing the cross-sectional area of ​​the gas flow path.

[0032] In one exemplary embodiment, the gas recovery line may further include another gas flow path connected between the second section and the pump.

[0033] In one exemplary embodiment, the gas recovery pipeline may further include: a gas flow path connected between the second part and the pump; and a valve capable of adjusting the opening degree of the gas flow path. In one exemplary embodiment, when the heat transfer gas is supplied from the gas supply pipeline to the aforementioned gap, the valve opening degree may be set to be less than the full opening degree.

[0034] In one exemplary embodiment, the third part may include a valve connected between the second part and the substrate support.

[0035] In one exemplary embodiment, the first part may include a tank for storing heat transfer gas. A gas recovery line may be configured to return the heat transfer gas to the tank.

[0036] In one exemplary embodiment, the gas supply system may further include a pressure regulator. The pressure regulator is configured to adjust the pressure of the heat transfer gas in a portion of the gas supply line relative to the upstream side of the pressure controller. In one exemplary embodiment, the pressure regulator may include a pressure gauge and a valve. The pressure gauge is configured to measure the pressure of the heat transfer gas within the tank. The valve is connected between the heat transfer gas source and the first portion and is opened and closed according to the pressure measured by the pressure gauge.

[0037] In one exemplary embodiment, the pressure regulator can set the pressure in a portion of the gas supply line upstream of the pressure controller to a pressure higher than the required supply pressure of the pressure controller.

[0038] In one exemplary embodiment, the gas supply system may further include another gas supply line and another gas recovery line. The other gas supply line is configured to supply heat transfer gas to the aforementioned gap. The other gas supply line includes the aforementioned first portion, another second portion, another pressure controller, and another third portion. The other second portion is located downstream of the first portion. The other pressure controller is configured to adjust the pressure of the heat transfer gas and is connected between the first portion and the other second portion. The other third portion connects the other second portion and the aforementioned gap. The other gas recovery line is connected to the first portion and the other second portion. The other gas recovery line is connected between the first portion and the other second portion. The other gas recovery line is configured to return the heat transfer gas from the other second portion to the first portion.

[0039] In another exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a substrate support and any of the gas supply systems described in the exemplary embodiments above. The substrate support is configured to support a substrate placed thereon. The gas supply system is configured to supply heat transfer gas to the gap between the substrate support and the back surface of the substrate.

[0040] In yet another exemplary embodiment, a method for operating any of the gas supply systems described in the above exemplary embodiments is provided. The operating method includes a step of supplying heat transfer gas to the gap between a substrate support and the back surface of the substrate via a gas supply pipeline. The operating method further includes a step of partially recovering the heat transfer gas from a second portion to a first portion via a gas recovery pipeline while the heat transfer gas is supplied to the gap.

[0041] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in the drawings, the same or equivalent parts are labeled with the same symbols.

[0042] Figure 1 and Figure 2This is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment. In one embodiment, the substrate processing apparatus is a plasma processing system.

[0043] In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas outlet is connected to the exhaust system 40 (described later). The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0044] The plasma generation unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), Helicon Wave Plasma (HWP), or Surface Wave Plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0045] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various processes described herein. The control unit 2 can be configured to control various components of the plasma processing apparatus 1 in a manner that executes the various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may, for example, be included in a computer 2a. The computer 2a may, for example, be included in a processing unit (CPU) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 can be configured to perform various control operations according to a program stored in the storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 2a3 can communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0046] The following describes a structural example of a capacitively coupled plasma processing apparatus 1, which is an example of a plasma processing apparatus 1. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet unit. The gas inlet unit is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet unit includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has the spray head 13, a sidewall 10a extending through the plasma processing chamber 10, and a plasma processing space 10s defined by the substrate support 11. The sidewall 10a is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the frame of the plasma processing chamber 10.

[0047] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region (substrate support surface) 111a for supporting a substrate (wafer) W and an annular region (ring support surface) 111b for supporting the ring assembly 112. In top view, the annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. In one embodiment, the main body portion 111 includes a base and an electrostatic chuck. The base includes conductive components. The conductive components of the base function as a lower electrode. The electrostatic chuck is disposed on the base. The upper surface of the electrostatic chuck has the substrate support surface 111a. The ring assembly 112 includes one or more annular components. At least one of the one or more annular components is an edge ring. Furthermore, although not shown in the figures, the substrate support 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck, ring assembly 112, and substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path.

[0048] The spray head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Furthermore, the spray head 13 includes a conductive component. The conductive component of the spray head 13 functions as an upper electrode. In addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) mounted on one or more openings formed on the sidewall 10a.

[0049] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0050] The power supply 30 includes an RF power supply 31 connected to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power), including a source RF signal and a bias RF signal, to a conductive component of the substrate support 11 and / or a conductive component of the spray head 13. Plasma is thus formed by at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the conductive component of the substrate support 11, a bias potential is generated on the substrate W, enabling the ionic components in the formed plasma to be drawn into the substrate W.

[0051] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is configured to be connected to a conductive component of the substrate support 11 and / or a conductive component of the spray head 13 via at least one impedance matching circuit, generating a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 13MHz to 150MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple source RF signals with different frequencies. One or more generated source RF signals are supplied to the conductive component of the substrate support 11 and / or the conductive component of the spray head 13. The second RF generation unit 31b is configured to be connected to a conductive component of the substrate support 11 via at least one impedance matching circuit, generating a bias RF signal (bias RF power). In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 400kHz to 13.56MHz. In one embodiment, the second RF generation unit 31b may be configured to generate a plurality of bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to the conductive components of the substrate support unit 11. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0052] Furthermore, the power supply 30 may include a DC power supply 32 integrated into the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is configured to connect to a conductive member of the substrate support 11 to generate a first DC signal. The generated first DC signal is applied to the conductive member of the substrate support 11. In one embodiment, the first DC signal may be applied to another electrode, such as an electrode within an electrostatic chuck. In one embodiment, the second DC generating unit 32b is configured to connect to a conductive member of the spray head 13 to generate a second DC signal. The generated second DC signal is applied to the conductive member of the spray head 13. In various embodiments, the first and second DC signals may be pulsed. Alternatively, the first and second DC generating units 32a and 32b may be added to the RF power supply 31, or the first DC generating unit 32a may replace the second RF generating unit 31b.

[0053] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0054] The following is for reference. Figure 3 . Figure 3 This is a diagram illustrating a gas supply system according to an exemplary embodiment. Figure 3 The gas supply system 50 shown can be used, for example, in a substrate processing apparatus such as plasma processing apparatus 1.

[0055] The gas supply system 50 includes a gas supply line 51 and a gas recovery line 52. The gas supply line 51 is configured to supply a heat transfer gas (e.g., helium gas) to the gap between the substrate support 11 and the back surface of the substrate W. The gas supply line 51 includes a first part P1, a second part P2, a third part P3, and a pressure controller PC.

[0056] Part 1, P1, provides a gas flow path connected to the heat transfer gas source GS. Part 2, P2, is located downstream of Part 1, P1. Part 2, P2, provides a gas flow path for the heat transfer gas. A pressure controller, PC, is connected between Part 1, P1, and Part 2, P2. Part 3, P3, is located downstream of Part 2, P2, and provides a gas flow path for the heat transfer gas. Part 3, P3, interconnects the gap between Part 2, P2, the substrate support 11, and the back surface of the substrate W. In the gas supply line 51, the heat transfer gas is supplied from the source GS through Part 1, P1, the pressure controller, P2, and P3 to the gap between the substrate support 11 and the back surface of the substrate W.

[0057] In one embodiment, part P1 may include a tank TA. Tank TA is a container in which heat transfer gas is stored. In one embodiment, valve V1 and pressure regulator PR may be connected between part P1 and source GS. Valve V1 may be an on / off valve or a valve whose opening degree can be adjusted.

[0058] The pressure regulator RP is configured to adjust the pressure of the heat transfer gas in the portion of the gas supply line 51 relative to the upstream side (primary side) of the pressure controller PC. In one embodiment, the pressure regulator PR can be a pressure regulator. The pressure regulator PR is capable of setting the pressure of the heat transfer gas in the portion of the gas supply line 51 relative to the upstream side of the pressure controller PC to a pressure higher than the required supply pressure of the pressure controller PC. The required supply pressure of the pressure controller PC can be above the maximum pressure of the heat transfer gas output by the pressure controller PC. The pressure of the heat transfer gas output by the pressure regulator PR to the portion of the gas supply line 51 relative to the upstream side of the pressure controller PC is, for example, specified to the pressure regulator PR by the control unit 2.

[0059] The pressure controller PC is configured to control the pressure of the heat transfer gas output to its downstream (secondary side) in the gas supply line 51. The pressure of the heat transfer gas output to its downstream side is, for example, specified to the pressure controller PC by the control unit 2.

[0060] In one embodiment, valve V21 can be connected between the first part P1 and the pressure controller PC. Furthermore, valve V22 can be connected between the pressure controller PC and the second part P2. Valves V21 and V22 can be either on / off valves or valves whose opening degree can be adjusted.

[0061] Gas recovery line 52 is connected to section 1 P1 and section 2 P2. Gas recovery line 52 includes a gas flow path connecting section 1 P1 and section 2 P2. Gas recovery line 52 also includes a pump PU. Pump PU is connected between section 1 P1 and section 2 P2, forming part of the gas flow path of gas recovery line 52. Gas recovery line 52 is configured to return heat transfer gas from section 2 P2 to section 1 P1. In one embodiment, gas recovery line 52 is configured to return heat transfer gas from section 2 P2 to tank TA. Gas recovery line 52 shares section 3 P3 with gas supply line 51.

[0062] In one embodiment, the gas recovery line 52 may include a first recovery line 521 and a second recovery line 522. The first recovery line 521 provides a gas flow path connecting the second part P2 and the pump PU. The first recovery line 521 also includes a valve V3 and a throttling orifice OF. The valve V3 and the throttling orifice OF partially constitute the gas flow path of the first recovery line 521. The valve V3 may be an on / off valve or a valve whose opening can be adjusted. The throttling orifice OF reduces the cross-sectional area of ​​the gas flow path of the first recovery line 521.

[0063] The second recovery line 522 provides another gas flow path connecting the second section P2 and the pump PU. That is, the first recovery line 521 and the second recovery line 522 are connected in parallel between the second section P2 and the pump PU. The second recovery line 522 also includes a valve V4. The valve V4 partially constitutes the gas flow path of the second recovery line 522. The valve V4 can be an on / off valve or a valve whose opening can be adjusted. Furthermore, the second recovery line 522 does not include a throttling orifice. That is, the minimum cross-sectional area of ​​the gas flow path of the second recovery line 522 is greater than the minimum cross-sectional area of ​​the gas flow path of the first recovery line 521.

[0064] The following describes the operation method of the gas supply system 50. The operation method includes a step of supplying heat transfer gas to the gap between the substrate support portion 11 and the back surface of the substrate W through the gas supply pipe 51. The operation method also includes a step of partially recovering the heat transfer gas from the second part P2 to the first part P1 through the gas recovery pipe 52 when the heat transfer gas is supplied to the gap.

[0065] The following is for reference. Figure 4 The gas supply sequence in the operation method of the gas supply system 50 is explained. Figure 4 This is a schematic diagram illustrating a gas supply sequence according to an exemplary embodiment. In the gas supply sequence, each part of the gas supply system 50 can be controlled by the control unit 2. By executing the gas supply sequence, heat transfer gas is supplied through the gas supply pipe 51 to the gap between the substrate support 11 and the back surface of the substrate W. Furthermore, by executing the gas supply sequence, the heat transfer gas is partially returned from the second part P2 to the first part P1 through the gas recovery pipe 52.

[0066] exist Figure 4In the gas supply sequence shown, firstly, valve V1 is opened (step 401). Next, valves V21, V22, and V3 are opened (step 402). Furthermore, valve V4 is closed during the gas supply sequence. Next, the pressure of the heat transfer gas is controlled by the pressure controller PC (step 403). During the execution of this gas supply sequence, pump PU is operated to return a portion of the heat transfer gas from section 2 P2 to section 1 P1. Through this gas supply sequence, heat transfer gas at the specified pressure is supplied to the gap between the substrate support 11 and the back surface of the substrate W. Furthermore, the heat transfer gas is partially returned from section 2 P2 to section 1 P1 via the gas recovery pipe 52.

[0067] The following is for reference. Figure 5 The gas stop sequence in the operation method of the gas supply system 50 is explained. Figure 5 This is a schematic diagram illustrating a gas stop sequencing according to an exemplary embodiment. In the gas stop sequencing, each part of the gas supply system 50 can be controlled by the control unit 2. By executing the gas stop sequencing, the supply of heat transfer gas based on the gas supply system 50 is stopped.

[0068] exist Figure 5 In the gas stop sequence shown, firstly, valves V21 and V3 are closed (step 501). Next, valve V4 is opened (step 502). Then, after a desired standby time (step 503), valves V22 and V4 are closed (step 504). Next, valve V1 is closed (step 505). During the execution of this gas stop sequence, pump PU is operated to return the heat transfer gas to the first section P1. This gas stop sequence stops the supply of heat transfer gas to the gap between the substrate support 11 and the back surface of the substrate W. Furthermore, the heat transfer gas in the second section P2, the third section P3 of the gas supply system 50, and the gas recovery pipeline 52 is returned to the first section P1 (e.g., tank TA).

[0069] According to the gas supply system 50 described above, the heat transfer gas supplied to the gap between the substrate support 11 and the back surface of the substrate W is returned to the first part P1 of the gas supply pipe 51 for reuse. Therefore, the consumption of heat transfer gas is suppressed. Furthermore, the gas supply pipe 51 and the gas recovery pipe 52 share the third part P3, and the heat transfer gas returns from the second part P2, which is connected to the third part P3, to the first part P1. Therefore, unexpected pressure increases in the third part P3 and the gas in the aforementioned gap can be suppressed. Moreover, by sharing the third part P3 between the gas supply pipe 51 and the gas recovery pipe 52, the gas pipe structure can be simplified.

[0070] In one embodiment, when heat transfer gas is supplied to the gap between the substrate support 11 and the back surface of the substrate W, a small amount of heat transfer gas returns from the second part P2 to the first part P1 via the first recovery pipe 521. On the other hand, when the supply of heat transfer gas is stopped, the heat transfer gas effectively returns from the second part P2 to the first part P1 via the second recovery pipe 522.

[0071] The following is for reference. Figure 6 . Figure 6 This is a diagram illustrating a gas supply system according to another exemplary embodiment. Figure 6 The gas supply system 50B shown can be used, for example, in a substrate processing apparatus such as plasma processing apparatus 1. In the gas supply system 50B, the pressure regulator PR includes a valve V1 and a pressure gauge PM. The pressure gauge PM is configured to measure the pressure inside the tank TA. The opening or closing of the valve V1, or its opening degree, is controlled by the control unit 2 so that the pressure measured by the pressure gauge PM becomes a specified pressure.

[0072] Another structure of the gas supply system 50B is identical to the corresponding structure of the gas supply system 50. The above-described operating method, gas supply sequence, and gas stop sequence can also be applied to the gas supply system 50B.

[0073] The following is for reference. Figure 7 . Figure 7 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment. Figure 7 The gas supply system 50C shown can be used, for example, in a substrate processing apparatus such as plasma processing apparatus 1. The third part P3 of the gas supply system 50C includes a valve V6. Valve V6 partially constitutes the gas flow path of the third part P3. Valve V6 can be an on / off valve or a valve whose opening degree can be adjusted. The gas supply system 50C does not include valve V22. Another structure of the gas supply system 50C is the same as the corresponding structure of the gas supply system 50. Furthermore, the above-described operating method can also be applied to the gas supply system 50C.

[0074] Figure 8 This is a schematic diagram illustrating the gas supply sequence of another exemplary embodiment. For example... Figure 8 As shown, in the gas supply sequencing applied to the gas supply system 50C, firstly, valve V1 is opened (step 801). Next, valves V21, V3, and V6 are opened (step 802). Furthermore, during the gas supply sequencing, valve V4 is closed. Next, the pressure of the heat transfer gas is controlled by the pressure controller PC (step 803). During the execution of this gas supply sequencing, pump PU is operated to return a portion of the heat transfer gas from section 2 P2 to section 1 P1.

[0075] Figure 9This is a schematic diagram illustrating a gas stopping sequence according to another exemplary embodiment. For example... Figure 9 As shown, in the gas stop sequencing applied to the gas supply system 50C, firstly, valves V21, V3, and V6 are closed (step 901). Next, valve V4 is opened (step 902). Then, after a desired standby time (step 903), valve V4 is closed (step 904). Next, valve V1 is closed (step 905). During the execution of this gas stop sequencing, pump PU is operated to return the heat transfer gas to section P1. According to the gas supply system 50C, during the execution of the gas stop sequencing, the process gas in the plasma processing chamber 10 is controlled to return to section P1.

[0076] The following is for reference. Figure 10 . Figure 10 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment. Figure 10 The gas supply system 50D shown can be used, for example, in a substrate processing apparatus such as plasma processing apparatus 1. In the gas supply system 50D, the gas recovery line 52, excluding the first recovery line 521 and the second recovery line 522, provides a single gas flow path connecting the second part P2 and the pump PU. The gas recovery line 52 includes a valve V3C whose opening can be adjusted. The valve V3C forms part of the single gas flow path of the gas recovery line 52. Another structure of the gas supply system 50D is identical to the corresponding structure of the gas supply system 50. Furthermore, the above-described operating method can also be applied to the gas supply system 50D.

[0077] Figure 11 This is a schematic diagram illustrating the gas supply sequence of yet another exemplary embodiment. For example... Figure 11 As shown, in the gas supply sequencing applied to the gas supply system 50D, firstly, valve V1 is opened (step 1101). Next, valves V21, V22, and V3C are opened (step 1102). To allow a small amount of heat transfer gas to return from part 2 P2 to part 1 P1, the opening of valve V3C is set to be less than its full opening. Next, the pressure of the heat transfer gas is controlled by the pressure controller PC (step 1103). During the execution of this gas supply sequencing, pump PU is operated to return a portion of the heat transfer gas from part 2 P2 to part 1 P1.

[0078] Figure 12 This is a schematic diagram illustrating a gas stopping sequence in yet another exemplary embodiment. For example... Figure 12As shown, in the gas stop sequencing applied to the gas supply system 50D, firstly, valve V21 is closed (step 1202). Next, valve V3C is opened (step 1202). The opening degree of valve V3C is set higher than its opening degree during the gas supply sequencing, for example, fully open. Then, after a desired standby time (step 1203), valves V22 and V3C are closed (step 1204). Next, valve V1 is closed (step 1205). During the execution of this gas stop sequencing, pump PU is operated to return the heat transfer gas to section P1.

[0079] The following is for reference. Figure 13 . Figure 13 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment. Figure 13 The gas supply system 50E shown can be used, for example, in a substrate processing apparatus such as plasma processing apparatus 1. The gas supply system 50E also includes a gas supply line 51E and a gas recovery line 52E.

[0080] Gas supply line 51E is configured similarly to gas supply line 51 to supply heat transfer gas to the gap between the substrate support portion 11 and the back surface of the substrate W. Gas supply line 51E includes a second part P2E, a pressure controller PCE, and a third part P3E. Gas supply line 51E shares a first part P1 with gas supply line 51.

[0081] Part 2, P2E, is located downstream of Part 1, P1. Part 2, P2E provides a gas flow path for the heat transfer gas. A pressure controller, PCE, is connected between Part 1, P1, and Part 2, P2E. The pressure controller, PCE, is configured to control the pressure of the heat transfer gas output downstream in the gas supply line 51E. The pressure of the heat transfer gas output downstream of the pressure controller, PCE, is specified to the pressure controller, PCE, for example, from the control unit 2. In one embodiment, the pressure controller, PCE, is connected to Part 1, P1, via valve V21. Furthermore, the pressure controller, PCE, is connected to Part 2, P2E, via valve V22E. Valve V22E can be an on / off valve or a valve whose opening degree can be adjusted.

[0082] Part 3, P3E, is located downstream of Part 2, P2E, and provides a gas flow path for the heat transfer gas. Part 3, P3E, is interconnected with Part 2, P2E, the substrate support 11, and the back surface of the substrate W. In the gas supply line 51E, the heat transfer gas is supplied from the source GS through Part 1, P1, pressure controller PCE, Part 2, P2E, and Part 3, P3E to the gap between the substrate support 11 and the back surface of the substrate W.

[0083] Gas recovery line 52E is connected to section 1 P1 and section 2 P2E. Gas recovery line 52E includes a gas flow path connecting section 1 P1 and section 2 P2E. Gas recovery line 52E shares pump PU with gas recovery line 52. Pump PU partially constitutes the gas flow path of gas recovery line 52 and gas recovery line 52E. Gas recovery line 52E is configured to return heat transfer gas from section 2 P2E to section 1 P1. In one embodiment, gas recovery line 52E is configured to return gas from section 2 P2E to tank TA. Gas recovery line 52E shares section 3 P3E with gas supply line 51E.

[0084] In one embodiment, the gas recovery line 52E may include a first recovery line 521E and a second recovery line 522E. The first recovery line 521E provides a gas flow path connecting the second part P2E and the pump PU. The first recovery line 521E also includes a valve V3E and an orifice OFE. The valve V3E and the orifice OFE partially constitute the gas flow path of the first recovery line 521E. The valve V3E may be an on / off valve or a valve whose opening can be adjusted. The orifice OFE reduces the cross-sectional area of ​​the gas flow path of the first recovery line 521E.

[0085] The second recovery line 522E provides another gas flow path connecting the second section P2E and the pump PU. That is, the first recovery line 521E and the second recovery line 522E are connected in parallel between the second section P2E and the pump PU. The second recovery line 522E also includes a valve V4E. Valve V4E partially constitutes the gas flow path of the second recovery line 522E. Valve V4E can be an on / off valve or a valve whose opening can be adjusted. Furthermore, the second recovery line 522E does not include a throttling orifice. That is, the minimum cross-sectional area of ​​the gas flow path of the second recovery line 522E is greater than the minimum cross-sectional area of ​​the gas flow path of the first recovery line 521E.

[0086] Another structure of the gas supply system 50E is identical to the corresponding structure of the gas supply system 50. Furthermore, the aforementioned operating method can also be applied to the gas supply system 50E. Specifically, the operating method includes a step of supplying heat transfer gas to the gap between the substrate support portion 11 and the back surface of the substrate W via gas supply lines 51 and 51E. The operating method also includes a step of partially recovering the heat transfer gas from the second portion P2 and P2E to the first portion P1 via gas recovery lines 52 and 52E when the heat transfer gas is supplied to this gap.

[0087] In the gas supply sequencing applied to the gas supply system 50E, each part of the gas supply system 50E can be controlled by the control unit 2. By executing the gas supply sequencing, heat transfer gas is supplied through gas supply pipes 51 and 51E to the gap between the substrate support 11 and the back surface of the substrate W. Furthermore, by executing the gas supply sequencing, heat transfer gas is partially returned from the second part P2 and P2E to the first part P1 through gas recovery pipes 52 and 52E.

[0088] Figure 14 This is a schematic diagram illustrating the gas supply sequence of yet another exemplary embodiment. For example... Figure 14 As shown, in the gas supply sequencing applied to the gas supply system 50E, firstly, valve V1 is opened (step 1401). Next, valves V21, V22, V22E, V3, and V3E are opened (step 1402). Furthermore, during the gas supply sequencing, valves V4 and V4E are closed. Next, the pressure of the heat transfer gas is controlled by pressure controllers PC and PCE (step 1403). During the execution of this gas supply sequencing, pump PU is operated to return a portion of the heat transfer gas from the second section P2 and P2E to the first section P1. Through this gas supply sequencing, heat transfer gas at the specified pressure is supplied to the gap between the substrate support 11 and the back surface of the substrate W. Furthermore, the heat transfer gas is partially returned from the second section P2 and P2E to the first section P1 via gas recovery lines 52 and 52E.

[0089] In the gas stop sequencing applied to the gas supply system 50E, each part of the gas supply system 50E can be controlled by the control unit 2. By executing the gas stop sequencing, the supply of heat transfer gas based on the gas supply system 50E is stopped.

[0090] Figure 15 This is a schematic diagram illustrating a gas stopping sequence in yet another exemplary embodiment. For example... Figure 15 As shown, in the gas stop sequencing applied to the gas supply system 50E, firstly, valves V21, V3, and V3E are closed (step 1501). Next, valves V4 and V4E are opened (step 1502). Then, after a desired standby time (step 1503), valves V22, V22E, V4, and V4E are closed (step 1504). Next, valve V1 is closed (step 1505). During the execution of this gas stop sequencing, pump PU is operated to return the heat transfer gas to the first section P1. Through this gas stop sequencing, the supply of heat transfer gas to the gap between the substrate support 11 and the back surface of the substrate W is stopped. Furthermore, the heat transfer gas in the second sections P2 and P2E, the third sections P3 and P3E, and the gas recovery lines 52 and 52E of the gas supply system 50 is returned to the first section P1 (e.g., tank TA).

[0091] The following is for reference. Figure 16 . Figure 16 This is a diagram illustrating a gas supply system according to yet another exemplary embodiment. Figure 16 The gas supply system 50F shown differs from the gas supply system 50 in that it also includes a booster PI, a filter FT, and a check valve CV. The booster PI, filter FT, and check valve CV are connected between the pump PU and the first part P1 (e.g., tank TA). The pump PU can be a turbomolecular pump. Furthermore, the gas supply systems of the various embodiments described above, like the gas supply system 50F, may also include a booster PI, filter FT, and check valve CV.

[0092] The booster PI boosts the gas recovered through the gas recovery line 52. The gas boosted by the booster PI is returned to section P1 (e.g., tank TA). The booster PI can be a dry pump or a compressor, etc. A check valve CV is provided to prevent gas from flowing back from the gas supply line 51 to the gas recovery line 52. A filter FT is connected between the check valve CV and the booster PI. The filter FT is configured to capture and remove components other than the heat transfer gas. The components removed by the filter FT may include oil from the booster PI, mechanical debris from the exhaust system, debris from the back of the substrate and the substrate support (e.g., an electrostatic chuck), degassing from the piping, and residual gas in the chamber.

[0093] The above descriptions have illustrated various exemplary embodiments, but the embodiments are not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0094] For example, the gas supply systems of the various embodiments described above can be used in other substrate processing apparatuses besides plasma processing apparatuses.

[0095] Furthermore, the gas supply system 50E includes two gas supply lines and two gas recovery lines, but in another embodiment, the gas supply system may include three or more gas supply lines and three or more gas recovery lines.

[0096] Furthermore, an exhaust device can be connected to the second recovery line 522 between valve V4 and pump PU. Also, at least one other gas supply line can be connected to the gas flow path of the gas supply line 51 between valve V21 and pressure controller PC. The at least one other gas supply line is configured to supply heat transfer gas to the gap between the substrate support and the back surface of the substrate of at least one other substrate processing device. The at least one other gas supply line may include, like gas supply line 51, a pressure controller, a valve, a second part, and a third part. The pressure controller, valve, second part, and third part of the at least one other gas supply line can be connected between valve V21 and the gap between the substrate support and the back surface of the substrate of at least one other substrate processing device. Furthermore, the first recovery line and the second recovery line are connected to the second part of the at least one other gas supply line and pump PU, similar to the gas recovery line 52.

[0097] As can be understood from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, it is not intended to limit the various embodiments disclosed in this specification; the true scope and spirit are shown in the appended claims.

[0098] Symbol Explanation

[0099] 1-Plasma processing apparatus, 2-Control unit, 11-Substrate support unit, 50-Gas supply system, 51-Gas supply pipeline, P1-Part 1, P2-Part 2, P3-Part 3, PC-Pressure controller, 52

[0100] -Gas recovery pipeline, PU pump.

Claims

1. A gas supply system comprising: Gas supply pipeline; and Gas recovery pipeline, The gas supply pipeline supplies heat transfer gas to the gap between the substrate support and the back of the substrate. The gas supply pipeline includes: Part 1; Part 2 is located downstream of Part 1; A pressure controller, configured to adjust the pressure of the heat transfer gas, is connected between the first part and the second part; and Part 3 connects Part 2 and the gap. The gas recovery pipeline is connected to the first section and the second section, and includes a pump connected between the first section and the second section. It shares the third section with the gas supply pipeline, and is configured to return the heat transfer gas from the second section to the first section. The gas recovery pipeline includes: The first recovery pipeline includes: a gas flow path connected between the second section and the pump; a throttling orifice reducing the cross-sectional area of ​​the gas flow path; and a first valve forming part of the gas flow path. The second recovery pipeline includes: another gas flow path connected between the second section and the pump; and a second valve forming part of the other gas flow path. The minimum cross-sectional area of ​​the other gas flow path of the second recovery pipeline is greater than the minimum cross-sectional area of ​​the gas flow path of the first recovery pipeline.

2. The gas supply system according to claim 1, wherein, The third part includes a valve connected between the second part and the substrate support.

3. The gas supply system according to claim 1, wherein, The first part includes a tank for storing the heat transfer gas. The tank is connected between the source of the heat transfer gas and the pressure controller. The gas recovery pipeline is configured to return the heat transfer gas to the tank.

4. The gas supply system according to claim 3, further comprising: A pressure regulator connected between the source of the heat transfer gas and the tank, configured to adjust the pressure of the heat transfer gas in a portion upstream of the pressure controller.

5. The gas supply system according to claim 4, wherein, The pressure regulator includes: A pressure gauge is configured to measure the pressure of the heat transfer gas inside the tank; and A valve, connected between the source of the heat transfer gas and the tank, is opened and closed according to the pressure measured by the pressure gauge.

6. The gas supply system according to claim 4, wherein, The pressure regulator sets the pressure in the portion of the gas supply line upstream of the pressure controller to a pressure higher than the required supply pressure of the pressure controller.

7. The gas supply system according to claim 5, wherein, The pressure regulator sets the pressure in the portion of the gas supply line upstream of the pressure controller to a pressure higher than the pressure required by the pressure controller.

8. The gas supply system according to any one of claims 1 to 7, further comprising: Another gas supply line supplies the heat transfer gas to the gap and includes: The first part; another second part, located downstream of the first part; Another pressure controller, configured to adjust the pressure of the heat transfer gas, is connected between the first part and the other second part; and another third part connects the other second part and the gap; and Another gas recovery line, connected to the first part and the other second part, and including the pump connected between the first part and the other second part, is configured to return the heat transfer gas from the other second part to the first part.

9. The gas supply system according to any one of claims 1 to 7, wherein, The gas recovery pipeline also includes a booster connected between the pump and the first part, configured to boost the gas recovered from the second part.

10. The gas supply system according to any one of claims 1 to 7, wherein, The gas recovery pipeline also includes a check valve connected between the pump and the first part.

11. The gas supply system according to any one of claims 1 to 7, wherein, The gas recovery pipeline also includes a filter connected between the pump and the first part.

12. A substrate processing apparatus comprising: The substrate support portion is configured to support and carry the substrate placed thereon; and A gas supply system, as described in any one of claims 1 to 11, is configured to supply heat transfer gas to the gap between the substrate support and the back surface of the substrate.

13. An operating method, which is an operating method of the gas supply system according to any one of claims 1 to 11, comprising the following steps: The heat transfer gas is supplied to the gap through the gas supply pipeline; and When the heat transfer gas is supplied to the gap, with the first valve open and the second valve closed, the heat transfer gas is partially recovered from the second part to the first part through the first recovery pipeline.

14. The operating method according to claim 13, further comprising the following steps: Stop supplying the heat transfer gas to the gap, wherein, With the first valve closed and the second valve open, the heat transfer gas returns from the second section to the first section via the second recovery pipeline.

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