Semiconductor refrigeration assembly, method of manufacture and refrigeration device

Abstract

The application relates to a semiconductor refrigeration assembly, a manufacturing method and a refrigeration device. The semiconductor refrigeration assembly comprises a plurality of refrigeration units arranged along a first direction and electrically connected. The refrigeration unit comprises a semiconductor group and a plurality of heat-conducting sheets. The semiconductor group comprises a plurality of first semiconductors arranged along the first direction and electrically connected in series. The doping types of at least two first semiconductors are different. The plurality of heat-conducting sheets are respectively distributed on opposite sides of the semiconductor group along a second direction. The first direction intersects the second direction. The application can solve the problems that the overall thickness of the semiconductor refrigeration assembly is large and the refrigeration area decreases with the increase of the refrigeration stage number.

Description

Technical Field

[0001] This application relates to the field of semiconductor refrigeration technology, and in particular to a semiconductor refrigeration component, manufacturing method and refrigeration device. Background Technology

[0002] Semiconductor refrigeration chips do not require refrigerants and have no moving mechanical parts, thus enabling their application in situations where refrigerant pollution is not a concern and space is limited.

[0003] However, since the cooling capacity of a single thermoelectric cooler is limited, multiple thermoelectric coolers are usually stacked in order to improve the cooling effect. This results in a larger overall thickness of the thermoelectric cooler assembly and a smaller cooling area as the number of cooling stages increases. Summary of the Invention

[0004] Therefore, it is necessary to provide a semiconductor cooling component, manufacturing method, and cooling device to address the problem that the overall thickness of the semiconductor cooling component is large and the cooling area decreases with the increase of the number of cooling stages.

[0005] According to one aspect of this application, a semiconductor cooling component is provided, comprising a plurality of cooling portions arranged and electrically connected along a first direction, the cooling portions comprising: a semiconductor group comprising a plurality of first semiconductors arranged and electrically connected in series along the first direction, wherein at least two of the first semiconductors have different doping types; and a plurality of heat-conducting sheets respectively distributed on opposite sides of the semiconductor group along a second direction; wherein the first direction intersects the second direction.

[0006] In some embodiments, two adjacent cooling units share one heat-conducting plate.

[0007] In some embodiments, one or more flow guides are provided on the inner side of the heat-conducting sheet located on one side of the second direction, and at least two flow guides are provided on the inner side of the heat-conducting sheet located on the other side of the second direction; one first semiconductor is connected to the flow guides on both sides at opposite ends along the second direction; two first semiconductors connected to one flow guide on the same side are connected to two different flow guides on the other side, so that the plurality of first semiconductors are electrically connected in series.

[0008] In some embodiments, the semiconductor group of at least a portion of the cooling section further includes a plurality of second semiconductors; within the same cooling section, the second semiconductors are connected in parallel with the first semiconductor; in two adjacent cooling sections, the second semiconductor of one cooling section is connected in parallel with the first semiconductor of the other cooling section.

[0009] In some embodiments, at least a portion of the semiconductor group of the cooling section includes two second semiconductors, each having a first connection end and a second connection end opposite to each other along the second direction; the first connection ends of the two second semiconductors are connected to a current guide plate on the same side, and the second connection ends of the two second semiconductors are connected to a current guide plate on the other side, so as to electrically connect to form a closed loop; within the same cooling section, the first semiconductor is electrically connected to the closed loop; the first semiconductors of adjacent cooling sections are electrically connected to the closed loop, so that adjacent cooling sections are electrically connected in parallel.

[0010] In some embodiments, the flow guide plate is attached to the inner surface of the heat-conducting plate.

[0011] In some embodiments, the semiconductor group includes a plurality of N-type semiconductors and a plurality of P-type semiconductors.

[0012] In some embodiments, the heat-conducting sheet comprises a ceramic sheet.

[0013] According to another aspect of this application, a method for manufacturing a semiconductor cooling component is provided, comprising the following steps: providing a plurality of cooling units as described above; arranging the plurality of cooling units along a first direction; and electrically connecting the plurality of cooling units.

[0014] According to another aspect of this application, a cooling device is provided, including a semiconductor cooling component as described above.

[0015] The semiconductor cooling assembly provided in this application includes multiple cooling sections arranged and electrically connected along a first direction. Each cooling section includes a semiconductor group and multiple heat-conducting sheets. The semiconductor group includes multiple first semiconductors arranged and electrically connected in series along the first direction, wherein at least two of the first semiconductors have different doping types. The multiple heat-conducting sheets are respectively distributed on opposite sides of the semiconductor group along a second direction intersecting the first direction. By arranging the multiple cooling sections along a direction intersecting the thickness direction of the semiconductor group, the space occupied by the multiple semiconductor cooling sheets along the thickness direction of the semiconductor group is reduced. Thus, multi-stage cooling is achieved by electrically connecting multiple cooling sections while reducing the overall thickness of the semiconductor cooling assembly. Furthermore, compared to the traditional structure of stacked multiple semiconductor cooling sheets, the semiconductor cooling assembly provided in this application has an improved cooling effect because the heat dissipation surface of each cooling section is not blocked. Also, since multi-stage cooling is not achieved by stacking, the cooling area does not decrease with the increase of the number of cooling stages. Therefore, compared to the traditional structure of stacked multiple semiconductor cooling sheets, the semiconductor cooling assembly provided in this application increases the cooling area. Attached Figure Description

[0016] Figure 1 A three-dimensional structural schematic diagram of a semiconductor cooling component according to an embodiment of this application is shown;

[0017] Figure 2 A cross-sectional schematic diagram of a semiconductor cooling component according to an embodiment of this application is shown;

[0018] Figure 3 A cross-sectional schematic diagram of a cooling section of a semiconductor cooling assembly according to an embodiment of this application is shown;

[0019] Figure 4 A schematic diagram of the heat transfer path of a semiconductor cooling component in one embodiment of this application is shown.

[0020] Explanation of icon numbers:

[0021] 1. Semiconductor cooling assembly; 10. Cooling section; 10a. First cooling section; 10b. Second cooling section; 10c. Third cooling section; 101. Cold side; 102. Hot side;

[0022] 11. Semiconductor group; 111. First semiconductor; 112. Second semiconductor;

[0023] 12. Heat-conducting plate; 121. First heat-conducting zone; 122. Second heat-conducting zone;

[0024] 13. Conductor plate; 131. Positive pin; 132. Negative pin;

[0025] X, the first direction; Y, the second direction. Detailed Implementation

[0026] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0027] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0028] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0029] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0030] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0031] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0032] A thermoelectric cooler (TEC), also known as a thermoelectric refrigeration device, is a type of heat pump that utilizes the Peltier effect of semiconductor materials. When direct current passes through a thermocouple made of two different semiconductor materials connected in series, heat is absorbed and released at the two ends of the thermocouple, achieving the purpose of cooling. TEC is a cooling technology that generates negative thermal resistance. Its advantages include no moving parts, high reliability, and the ability to be used in applications where refrigerant contamination is unavailable or space is limited.

[0033] Because the cooling capacity of a single thermoelectric cooler is limited, multiple thermoelectric coolers are typically stacked in related technologies to improve cooling efficiency. However, stacking multiple thermoelectric coolers increases the overall thickness. Furthermore, since adjacent thermoelectric coolers share a single heatsink, with a portion of this heatsink serving as the hot side of the lower heatsink and another portion as the cold side of the upper heatsink, the upper thermoelectric cooler is smaller than the lower one. Consequently, the cooling area decreases with each stacking layer; that is, the more cooling stages, the smaller the cooling area.

[0034] To address the aforementioned problems, this application provides a semiconductor cooling assembly, comprising multiple cooling sections arranged and electrically connected along a first direction. Each cooling section includes a semiconductor group and multiple heat-conducting sheets. The semiconductor group includes multiple first semiconductors arranged and electrically connected in series along the first direction, wherein at least two of the first semiconductors have different doping types. Multiple heat-conducting sheets are respectively distributed on opposite sides of the semiconductor group along a second direction intersecting the first direction. Based on this, the space occupied by the multiple semiconductor cooling sections along the second direction is relatively small. Thus, multi-stage cooling is achieved by electrically connecting multiple cooling sections while reducing the overall thickness of the semiconductor cooling assembly and increasing the cooling area. Furthermore, compared to the traditional structure of stacked multiple semiconductor cooling sections, the semiconductor cooling assembly provided in this application allows for easier heat dissipation because the heat-dissipating surfaces of each cooling section are not blocked, thereby further improving the cooling effect.

[0035] See Figure 1 , Figure 2 and Figure 3 , Figure 1 A three-dimensional structural schematic diagram of a semiconductor cooling component according to an embodiment of this application is shown; Figure 2 A cross-sectional schematic diagram of a semiconductor cooling component according to an embodiment of this application is shown; Figure 3 A cross-sectional schematic diagram of a cooling section of a semiconductor cooling assembly according to an embodiment of this application is shown.

[0036] An embodiment of this application provides a semiconductor cooling component 1, including a plurality of cooling units 10 arranged and electrically connected along a first direction X. Each cooling unit 10 includes a semiconductor group 11 and a plurality of heat-conducting sheets 12. The semiconductor group 11 includes a plurality of first semiconductors 111 arranged and electrically connected in series along the first direction X, wherein at least two of the first semiconductors 111 have different doping types. The plurality of heat-conducting sheets 12 are respectively distributed on opposite sides of the semiconductor group 11 along a second direction Y; wherein the first direction X intersects the second direction Y, and the plurality of cooling units 10 are electrically connected in series or in parallel.

[0037] Based on this, when direct current passes through multiple first semiconductors 111 connected in series, heat can be absorbed and released at opposite ends of the semiconductor group 11 in the thickness direction, i.e., at opposite ends along the second direction Y, achieving a cooling effect. Since the multiple cooling units 10 are arranged along the first direction X and electrically connected, multi-stage cooling is achieved, improving the cooling effect while reducing the overall thickness of the semiconductor cooling assembly 1. Furthermore, compared to the traditional structure of stacked multi-chip semiconductor cooling, the semiconductor cooling assembly 1 provided in this application has an improved cooling effect because the heat dissipation surface 102 of each cooling unit 10 is not blocked, allowing for easier heat dissipation. Also, since multi-stage cooling is not achieved through stacking, the cooling area does not decrease with the increase in the number of cooling stages. Therefore, compared to the traditional structure of stacked multi-chip semiconductor cooling, the semiconductor cooling assembly 1 provided in this application increases the cooling area.

[0038] Optionally, multiple cooling units 10 are connected in parallel to reduce the equivalent resistance in the circuit, thereby achieving a better cooling effect.

[0039] Optionally, the shape and size of the plurality of first semiconductors 111 can be adjusted as needed. In an exemplary embodiment, the plurality of first semiconductors 111 have the same shape and the same size.

[0040] Optionally, the shape and size of the plurality of heat-conducting sheets 12 can be adjusted as needed. In an exemplary embodiment, the plurality of heat-conducting sheets 12 have the same shape and are all rectangular, and the size of the plurality of heat-conducting sheets 12 is equal. In this way, the manufacturing process of the semiconductor cooling assembly 1 can be simplified, and the cooling surface of each cooling section can be effectively utilized.

[0041] In some embodiments, two adjacent cooling units 10 share a single heat-conducting sheet 12. Exemplarily, the orthographic projections of the semiconductor groups 11 of two adjacent cooling units 10 along the second direction Y lie within the orthographic projection of the same heat-conducting sheet 12 along the second direction Y, and the orthographic projections of the heat-conducting sheets 12 on different sides partially overlap along the second direction Y. In other words, by sharing a single heat-conducting sheet 12 with two adjacent cooling units 10, the space occupied by multiple cooling units 10 along the first direction X is reduced while ensuring multi-stage cooling effects.

[0042] In some embodiments, one or more flow guides 13 are provided on the inner side of the heat-conducting sheet 12 located on one side of the second direction Y, and at least two flow guides 13 are provided on the inner side of the heat-conducting sheet 12 located on one side of the second direction Y. A first semiconductor 111 is connected to the flow guides 13 on both sides at opposite ends along the second direction Y, and two first semiconductors 111 connected to a flow guide 13 on the same side are connected to two different flow guides 13 on the other side. The shape of the flow guide 13 can be a regular circle, rectangle, strip, or a combination of at least two of these shapes. In this way, multiple first semiconductors 111 are electrically connected in series through the flow guides 13, so that a cooling effect can be generated when direct current passes through the cooling unit 10.

[0043] Optionally, at least a portion of the semiconductor group 11 of the cooling section 10 further includes a plurality of second semiconductors 112. Within the same cooling section 10, the second semiconductors 112 are connected in parallel with the first semiconductors 111. In two adjacent cooling sections 10, the second semiconductors 112 of one cooling section 10 are connected in parallel with the first semiconductors 111 of the other cooling section 10. In this way, the second semiconductors 112 enable the parallel connection of two adjacent cooling sections 10, thereby achieving multi-stage cooling.

[0044] Optionally, at least a portion of the semiconductor group 11 of the cooling section 10 includes two second semiconductors 112, each having a first connection terminal and a second connection terminal opposite to each other along a second direction Y. The first connection terminals of the two second semiconductors 112 are connected to a guide plate 13 on the same side, and the second connection terminals of the two second semiconductors 112 are connected to a guide plate 13 on the other side, electrically connecting to form a closed loop. Within the same cooling section 10, a first semiconductor 111 is electrically connected to the closed loop. The first semiconductors 111 of adjacent cooling sections 10 are electrically connected to the closed loop, so that adjacent cooling sections 10 are electrically connected in parallel. Based on this, by energizing the positive and negative terminals of the semiconductor cooling assembly 1, a multi-stage cooling effect can be achieved. When the multiple cooling sections 10 of the semiconductor cooling assembly 1 are arranged in a horizontal direction, a horizontal multi-stage cooling effect can be achieved.

[0045] For example, the semiconductor cooling assembly 1 includes an edge cooling section located at the edge along a first direction X and a central cooling section located in the middle. The central cooling section includes a plurality of second semiconductors 112, and the central cooling section and the edge cooling section, as well as the central cooling section and the central cooling section, are electrically connected in parallel through closed loops formed by the plurality of second semiconductors 112.

[0046] Optionally, the flow guide 13 is attached to the inner surface of the heat conduction plate 12. In this way, the flow guide 13 can directly contact the semiconductor located between the oppositely disposed heat conduction plates 12, thereby facilitating the electrical connection between the flow guide 13 and the semiconductor.

[0047] For example, by etching the entire conductive sheet attached to the inner surface of the heat-conducting sheet 12, a plurality of spaced-apart flow guides 13 can be obtained to meet the connection requirements of multiple semiconductors.

[0048] In some embodiments, the semiconductor group 11 includes a plurality of N-type semiconductors and a plurality of P-type semiconductors. Optionally, the semiconductor group 11 includes a plurality of N-type semiconductors and a plurality of P-type semiconductors, which are arranged alternately along a first direction X. A thermocouple is formed by connecting the plurality of alternately arranged N-type and P-type semiconductors in series. When direct current passes through the thermocouple, the two ends of the thermocouple absorb heat and release heat respectively, producing a cooling effect.

[0049] Optionally, the heat-conducting plate 12 includes a ceramic plate. In this way, the high thermal conductivity of the ceramic plate can be utilized to transfer more heat under the same conditions, thereby improving the cooling effect.

[0050] Figure 4 A schematic diagram of the heat transfer path of a semiconductor cooling component according to an embodiment of this application is shown. Figure 4 The dashed arrows in the diagram indicate the direction of heat transfer.

[0051] Combination Figure 1 , Figure 2 , Figure 3 and Figure 4 In an exemplary embodiment, the semiconductor cooling assembly 1 includes a first cooling section 10a, a second cooling section 10b, and a third cooling section 10c arranged sequentially along a first direction X.

[0052] The first cooling section 10a includes a first heat-conducting region 121, a second heat-conducting region 122, and a plurality of first semiconductors 111. The first heat-conducting region 121 and the second heat-conducting region 122 are arranged opposite to each other and spaced apart along a second direction Y perpendicular to the first direction X. The plurality of first semiconductors 111 are disposed between the first heat-conducting region 121 and the second heat-conducting region 122. The plurality of first semiconductors 111 are multiple alternately arranged and parallel N-type semiconductors and P-type semiconductors. The N-type semiconductors and P-type semiconductors have the same size. Conductive sheets are provided on the inner sides of the first heat-conducting region 121 and the second heat-conducting region 122. The conductive sheets are etched and patterned to form a plurality of current-conducting sheets 13. The first semiconductors 111 are soldered to the current-conducting sheets 13. The plurality of first semiconductors 111 are electrically connected in series through the current-conducting sheets 13.

[0053] The second cooling unit 10b includes a first heat-conducting region 121, a second heat-conducting region 122, two first semiconductors 111, and two second semiconductors 112. The first heat-conducting region 121 and the second heat-conducting region 122 are arranged opposite to each other and spaced apart along a second direction Y perpendicular to the first direction X. The two first semiconductors 111 and the two second semiconductors 112 are all disposed between the first heat-conducting region 121 and the second heat-conducting region 122. Further, the arrangement direction of the first heat-conducting region 121 and the second heat-conducting region 122 of the second cooling unit 10b is opposite to that of the first heat-conducting region 121 and the second heat-conducting region 122 of the first cooling unit 10a. The first heat-conducting region 121 of the second cooling unit 10b and the second heat-conducting region 122 of the first cooling unit 10a are located on the same heat-conducting plate 12, that is, a part of the same ceramic plate serves as the first heat-conducting region 121 of the second cooling unit 10b, and another part serves as the second heat-conducting region 122 of the first cooling unit 10a. The first heat-conducting region 121 and the second heat-conducting region 122 each have a conductive sheet on their inner side. The conductive sheet is etched and patterned to form multiple current-conducting sheets 13. The first semiconductor 111 and the second semiconductor 112 are soldered to the current-conducting sheets 13. Furthermore, two first semiconductors 111 are electrically connected in series through the current-conducting sheets 13, and two second semiconductors 112 are electrically connected in parallel through the current-conducting sheets 13.

[0054] The structure of the third cooling section 10c is the same as that of the second cooling section 10b. The arrangement direction of the first heat-conducting area 121 and the second heat-conducting area 122 of the third cooling section 10c is opposite to that of the second heat-conducting area 121 and the second heat-conducting area 122 of the second cooling section 10b. The first heat-conducting area 121 of the third cooling section 10c and the second heat-conducting area 122 of the second cooling section 10b are located on the same heat-conducting plate 12. That is, a part of the same ceramic plate serves as the second heat-conducting area 122 of the second cooling section 10b, and the other part serves as the first heat-conducting area 121 of the third cooling section 10c.

[0055] Furthermore, the first cooling unit 10a, the second cooling unit 10b, and the third cooling unit 10c are electrically connected in parallel via the second semiconductor 112 and the current-conducting plate 13. A portion of the current-conducting plate 13 on the second heat-conducting region 122 of the third cooling unit 10c serves as the positive and negative pins 131 and 132 for connecting to the power supply when energized. Based on this, when power is applied to the positive and negative pins 131 and 132, the current passes through a coupler formed by multiple first semiconductors 111 connected in series, causing the coupler to release and absorb heat on opposite sides along the second direction Y, respectively. A cold surface 101 and a hot surface 102 are formed in the first and second heat-conducting regions 121 and 122, respectively. The cold and hot surfaces 101 and 102 of the first cooling unit 10a, the second cooling unit 10b, and the third cooling unit 10c are arranged alternately, utilizing the Peltier effect of the semiconductor material to perform multi-stage heat transfer, achieving multi-stage cooling. Under the same conditions, more heat is transferred, thereby improving the cooling effect.

[0056] In this embodiment, the semiconductor cooling component 1 reduces the overall thickness and space required by arranging multiple cooling units 10 sequentially along a direction perpendicular to the thickness, while increasing the area of ​​the cooling surface 101. Furthermore, this embodiment achieves a multi-stage cooling structure with a single-layer cooling chip, which can be fabricated by single-layer welding, simplifying the manufacturing process and reducing processing difficulty.

[0057] In other embodiments, the semiconductor cooling assembly 1 may include 4, 5, 6 or more cooling units 10.

[0058] Based on the same inventive objective, this application also provides a method for manufacturing a semiconductor cooling component 1. In one embodiment, the method for manufacturing the semiconductor cooling component 1 includes the following steps: providing a plurality of cooling units 10 as described in the above embodiment; arranging the plurality of cooling units 10 along the first direction X; and electrically connecting the plurality of cooling units 10. Optionally, the plurality of cooling units 10 are electrically connected in parallel, thereby reducing the equivalent resistance in the circuit.

[0059] The method for manufacturing the semiconductor cooling component 1 provided in this application arranges multiple cooling units 10 along directions intersecting with their thickness direction, thereby reducing the overall thickness of the semiconductor cooling component 1 and achieving multi-stage cooling. This transfers more heat under the same conditions, improves the cooling effect, and increases the cooling area.

[0060] For the same purpose, this application also provides a cooling device, which includes the semiconductor cooling component 1 in the above embodiments.

[0061] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0062] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A semiconductor cooling component, characterized in that, The cooling units include a plurality of cooling sections arranged and electrically connected along a first direction, the cooling sections comprising: A semiconductor group comprising a plurality of first semiconductors arranged in series along the first direction, wherein at least two of the first semiconductors have different doping types; and Multiple heat-conducting sheets are respectively distributed on opposite sides of the semiconductor group along the second direction; Wherein, the first direction intersects with the second direction, and the second direction is the thickness direction of the semiconductor group; Two adjacent cooling units share one heat-conducting sheet, and the cold and hot surfaces of multiple cooling units are arranged alternately to perform multi-stage cooling. The heat-conducting sheets located on different sides overlap along the orthographic projection portion of the second direction. One or more flow guides are provided on the inner side of the heat-conducting sheet located on one side of the second direction, and at least two flow guides are provided on the inner side of the heat-conducting sheet located on the other side of the second direction. The first semiconductor is connected at opposite ends along the second direction to the flow guide plates on both sides; Two first semiconductors connected to one current guide plate on the same side are respectively connected to two different current guide plates on the other side, so that the plurality of first semiconductors are electrically connected in series. The semiconductor group of at least part of the cooling unit also includes a plurality of second semiconductors; Within the same cooling section, the second semiconductor is connected in parallel with the first semiconductor; In two adjacent cooling sections, the second semiconductor of one cooling section is connected in parallel with the first semiconductor of the other cooling section.

2. The semiconductor cooling component according to claim 1, characterized in that, The semiconductor group of at least part of the cooling section includes two second semiconductors, each of the two second semiconductors having a first connection terminal and a second connection terminal opposite to each other along the second direction; The first connection terminals of the two second semiconductors are connected to a current guide plate on the same side, and the second connection terminals of the two second semiconductors are connected to a current guide plate on the other side, so as to electrically connect to form a closed loop; Within the same cooling unit, the first semiconductor is electrically connected to the closed circuit; The first semiconductor of the adjacent cooling unit is electrically connected to the closed loop so that the adjacent cooling units are electrically connected in parallel.

3. The semiconductor cooling component according to claim 1, characterized in that, The flow guide plate is attached to the inner surface of the heat-conducting plate.

4. The semiconductor cooling component according to claim 1, characterized in that, The semiconductor group includes several N-type semiconductors and several P-type semiconductors.

5. The semiconductor cooling component according to claim 1, characterized in that, The heat-conducting sheet includes a ceramic sheet.

6. A method for manufacturing a semiconductor cooling component, characterized in that, Includes the following steps: Provide a plurality of refrigeration units as described in any one of claims 1-5; The plurality of cooling units are arranged along the first direction and electrically connected.

7. A refrigeration device, characterized in that, Includes the semiconductor cooling component as described in any one of claims 1-5.

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