Target disc structure

Abstract

This invention discloses a target disk structure, including a base, a slip ring assembly, a brush assembly, a support plate assembly, and a heating unit. The slip ring assembly is sleeved on the circumferential periphery of the base and fixedly connected to it. The slip ring assembly includes a conductive ring assembly formed on the outermost layer. The brush assembly slides in contact with the conductive ring assembly to form an electrical connection. The support plate assembly is supported on the base and includes a first support plate and a second support plate stacked together, with a receiving space formed between the first and second support plates. The heating unit is disposed within the receiving space and electrically connected to the conductive ring assembly. This target disk structure can provide electrical energy for heating when the target disk rotates and moves up and down with the target disk, realizing the target disk heating function during ion implantation and reducing lattice damage caused by implantation.

Description

Technical Field

[0001] This invention relates to the field of wafer ion implantation equipment technology, and in particular to a target disk structure. Background Technology

[0002] In the semiconductor equipment field, sample rotation and heating are often required to ensure processing uniformity. However, simultaneously implementing heating and rotation functions often significantly increases equipment complexity and procurement costs, especially for critical equipment where the selection of these functions is limited. Ion implanters, as key equipment for crystal doping, rely on target disk rotation to improve implantation uniformity and target disk heating to reduce lattice damage caused during ion implantation. Both functions are crucial for ion implanters. Existing ion implanter equipment often only supports target disk rotation and lacks heating functionality. Only a few ion implanters incorporate heating devices, but these typically use magnetohydrodynamics or similar devices to rotate the sample. The heating device for the target disk cannot rotate with the sample, and its complex structure and high failure rate make it problematic.

[0003] The information disclosed in this background section is intended only to enhance the understanding of the overall background of the invention and should not be construed as an admission or in any way implying that the information constitutes prior art known to those skilled in the art. Summary of the Invention

[0004] The purpose of this invention is to provide a target disk structure that can provide electrical energy for heating when the target disk rotates, and the heating unit can move up and down with the target disk to realize the target disk heating function during ion implantation and reduce lattice damage caused by implantation.

[0005] To achieve the above objectives, embodiments of the present invention provide a target disk structure, including a base, a slip ring assembly, a brush assembly, a support plate assembly, and a heating unit.

[0006] The slip ring assembly is sleeved around the circumferential periphery of the base and fixedly connected to the base. The slip ring assembly includes a conductive ring group formed on the outermost layer. The brush group slides in contact with the conductive ring group to form an electrical connection. The support plate group is supported on the base. The support plate group includes a first support plate and a second support plate stacked together, and a receiving space is formed between the first support plate and the second support plate. The heating unit is disposed in the receiving space and electrically connected to the conductive ring group.

[0007] In one or more embodiments of the present invention, the slip ring assembly further includes an annular support frame and an insulating layer. The annular support frame is fixedly connected to the base. The insulating layer is sleeved on the annular support frame, and a receiving groove is formed on the side of the insulating layer away from the annular support frame. The conductive ring assembly is disposed in the receiving groove.

[0008] In one or more embodiments of the present invention, the target disk structure further includes a temperature sensing unit disposed within the accommodating space and electrically connected to the conductive ring assembly.

[0009] In one or more embodiments of the present invention, the brush group includes a plurality of independently arranged brushes; the conductive ring group includes a plurality of rings spaced apart in the axial direction, an insulating ring pad is provided between adjacent rings, and each ring corresponds to one brush.

[0010] In one or more embodiments of the present invention, the plurality of ring bodies include two conductive rings, and the two conductive rings are respectively electrically connected to the heating unit.

[0011] In one or more embodiments of the present invention, the plurality of ring bodies include two thermocouple rings, the two thermocouple rings being electrically connected to the temperature sensing unit respectively, and the conductive ring and the thermocouple rings being alternately arranged.

[0012] In one or more embodiments of the present invention, a plurality of lead holes are formed on the insulating layer, and wires are disposed in the lead holes. The heating unit and the conductive ring group are electrically connected through the wires, and the temperature sensing unit is electrically connected to the conductive ring group through the wires.

[0013] In one or more embodiments of the present invention, the upper surface of the second support plate that contacts the first support plate is recessed with a support groove, the first support plate covers the support groove to form the accommodating space, and the heating unit is distributed in the support groove and covers the upper surface of the second support plate.

[0014] In one or more embodiments of the present invention, the target disk structure further includes a lifting retaining ring, which is located above the carrier plate assembly and partially covers the carrier plate assembly. The lifting retaining ring can move up and down relative to the carrier plate assembly to clamp or release the wafer placed on the first carrier plate.

[0015] In one or more embodiments of the present invention, a wafer ejection assembly is provided on the base, the wafer ejection assembly includes an ejection frame and an ejection post disposed on the ejection frame; a through hole corresponding to the position of the ejection post is provided through the support plate assembly, the ejection post is disposed in the through hole and can move axially relative to the through hole.

[0016] In one or more embodiments of the present invention, the inner surface of the lifting ring is provided with one or more limiting portions protruding in the center direction, and when the lifting ring is attached to the carrier plate assembly, a gap adapted to the wafer thickness is formed between the bottom surface of the limiting portion and the carrier plate assembly.

[0017] In one or more embodiments of the present invention, a heat insulation column is provided between the support plate assembly and the base.

[0018] Compared with the prior art, the target disk structure of the present invention provides electrical energy for heating when the target disk rotates by setting a heating unit inside the target disk. The heating unit can move up and down with the target disk to realize the target disk heating function during ion implantation and reduce lattice damage caused by implantation.

[0019] The target disk structure of this invention, by covering the upper surface of the second carrier plate with a heating unit, can achieve uniform heating of the wafer placed on the carrier plate assembly, improve ion implantation efficiency, and further reduce lattice damage caused by implantation.

[0020] The target disk structure of this invention generates electrical energy through the sliding connection between the conductive ring group and the brush, thereby realizing the multi-channel conductivity required for heating, thermocouples (temperature sensing units), and other related heating processes. Attached Figure Description

[0021] Figure 1 This is a three-dimensional structural diagram of the target disk structure according to an embodiment of the present invention;

[0022] Figure 2 This is a three-dimensional structural diagram of the target disk structure according to an embodiment of the present invention (omitting the first support plate);

[0023] Figure 3 This is a front view of the target disk structure according to an embodiment of the present invention;

[0024] Figure 4 yes Figure 3 CC cross-sectional view of the target disk structure;

[0025] Figure 5 yes Figure 4 Enlarged view of section A;

[0026] Figure 6 yes Figure 3 A cross-sectional view of the target disk structure;

[0027] Figure 7 yes Figure 6 Enlarged view of section B;

[0028] Figure 8This is a structural diagram of the wafer ejection assembly in the target disk structure according to an embodiment of the present invention; Detailed Implementation

[0029] The specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings, but it should be understood that the scope of protection of the present invention is not limited to the specific embodiments.

[0030] Unless otherwise expressly stated, throughout the specification and claims, the term "comprising" or its variations such as "including" or "comprises" shall be understood to include the stated elements or components without excluding other elements or other components.

[0031] Ion implanters all include a target chamber for wafer ion implantation, and a base is installed inside the target chamber.

[0032] like Figures 1 to 4 As shown, one embodiment of the present invention provides a target disk structure, which is mounted on a base within the target chamber of an ion implanter and is rotatable relative to the base. The target disk structure includes a base 10, a slip ring assembly 20, a brush assembly 30, a support plate assembly 40, a heating unit 50, a temperature sensing unit, a lifting retaining ring 60, and a wafer ejection assembly 70. The slip ring assembly 20 is sleeved around the circumferential periphery of the base 10 and is fixedly connected to the base 10. The brush assembly 30 is disposed on the base and slides in contact with the slip ring assembly 20 to form an electrical connection. The support plate assembly 40 is supported on the base 10. The heating unit 50 and the temperature sensing unit are both disposed within the support plate assembly 40 and are electrically connected to the slip ring assembly 20. The lifting retaining ring 60 can approach or move away from the support plate assembly 40 axially from the base 10 to clamp or release the wafer placed on the support plate assembly 40. The wafer ejection assembly 70 is disposed on the base 10, and some of its components can pass through the carrier plate assembly 40 to eject the wafer placed on the carrier plate assembly 40.

[0033] In this embodiment, the base 10 is arranged in a disc-like shape, and the center of the base 10 is provided with a space for mounting the wafer ejection assembly 70.

[0034] like Figure 5 As shown, the slip ring assembly 20 includes an annular support frame 21, an insulating layer 22, and a conductive ring assembly 23. The annular support frame 21, the insulating layer 22, and the conductive ring assembly 23 are coaxially nested. The annular support frame 21 is sleeved on the circumferential periphery of the base 10 and is fixedly connected to the base 10. The conductive ring assembly 23 is disposed on the outermost layer, and the insulating layer 22 is located between the annular support frame 21 and the conductive ring assembly 23.

[0035] The annular support frame 21 is a metal support frame used to provide support for the conductive ring assembly 23. The annular support frame 21 can be fixedly connected to the base 10 by screws. The bottom of the annular support frame 21 extends outward to form a limiting part 211, which is used to support the insulating layer 22.

[0036] An insulating layer 22 is sleeved on the outside of the annular support frame 21 and abuts against the limiting part 211. A receiving groove is formed circumferentially on the side of the insulating layer 22 away from the annular support frame 21, which is used to place the conductive ring assembly 23. A plurality of lead holes 221 are formed on the insulating layer 22, and wires (not shown) are provided in the lead holes 221. The wires can realize the electrical connection between the heating unit 50 and the conductive ring assembly 23, and between the temperature sensing unit and the conductive ring assembly 23.

[0037] The conductive ring assembly 23 includes four rings spaced axially, with insulating ring pads 231 between adjacent rings to ensure no electrical conductivity between them. Each of the four rings includes two conductive rings 232 and two thermocouple rings 233, which are alternately arranged. The two conductive rings 232 are electrically connected to the heating unit 50 (one in, one out), and the two thermocouple rings 233 are also electrically connected to the temperature sensing unit (one in, one out). To improve the conductivity of the conductive ring assembly 23, it can be made of a conductive metal, preferably copper.

[0038] In this embodiment, the slip ring assembly 20 separates the conductive ring group 23 from the annular support frame 21 and the conductive ring group 23 itself through the insulating layer 22 and the insulating ring pad 231 of the insulating material, realizing the sliding contact of the four ring bodies of the conductive ring group 23. Two of them are heating ring bodies (conductive rings) that can carry a large current; the other two are thermocouple ring bodies (thermocouple rings) used to monitor the temperature of the target plate in real time.

[0039] like Figure 1 As shown, the brush assembly 30 is fixed to the base of the target chamber and slides in contact with the conductive ring assembly 23 to form an electrical connection. The brush assembly 30 includes multiple independently arranged brushes 31; each brush 31 corresponds to a ring body. Through the sliding contact between the ring body and the brush 31 fixed on the base, when the slip ring assembly 20 rotates simultaneously with the base 10, the brush 31 remains stationary with the base, thus successfully achieving an electrical connection (wireless). To improve the conductivity of the brush assembly 30, the brush assembly 30 is preferably composed of graphite brushes.

[0040] like Figure 2 and Figure 4As shown, the support plate assembly 40 is supported on the base 10, and a heat insulation column 43 is provided between the support plate assembly 40 and the base 10. The heat insulation column 43 is used to isolate the heat transfer between the support plate assembly 40 and the base 10, preventing heat from affecting other components in the target chamber through the base 10. The support plate assembly 40 includes a first support plate 41 and a second support plate 42 stacked together. The upper surface of the second support plate 42 that contacts the first support plate 41 has a recessed support groove 421. The first support plate 41 covers the support groove 421 to form a receiving space for accommodating the heating unit 50 and the temperature sensing unit. The heating unit 50 is distributed in the support groove 421 and covers the upper surface of the second support plate 42. The temperature sensing unit is also disposed in the support groove 421.

[0041] In one specific embodiment, the support groove 421 may be arranged in an S-shape, meandering along the upper surface of the second support plate 42 and covering the upper surface. In other embodiments, the support groove 421 may also be arranged in a coil-like annular pattern, covering the upper surface of the second support plate 42. Alternatively, the support groove 421 may be a circular chamber, with the heating unit 50 disposed inside arranged in an S-shape or coil-like annular pattern on the upper surface of the second support plate 42 and covering the upper surface. The heating unit 50 may be an electric heating wire, with its two ends electrically connected to two conductive rings 232 via wires. The temperature sensing unit may be a thermocouple, with the thermocouple connected to two thermocouple rings 233.

[0042] like Figure 6 and Figure 7 As shown, the lifting ring 60 is positioned above and partially covers the support plate assembly 40, and its bottom surface forms a space to accommodate the support plate assembly 40. The lifting ring 60 can move up and down relative to the support plate assembly 40 to clamp or release the wafer placed on the first support plate 41, and when the lifting ring 60 is in contact with the support plate assembly 40, the support plate assembly 40 is partially located within this space. The lifting ring 60 can be raised and lowered by a drive structure mounted on the base, and the ejector rod of the drive structure is detachably connected to the lifting ring 60. That is, the ejector rod only contacts the lifting ring 60 during the process of ejecting or retracting the lifting ring 60. When the lifting ring 60 is pressed against the support plate assembly 40, the ejector rod retracts onto the drive structure, and the entire target plate structure does not contact the drive structure. One or more limiting portions 61 are formed on the inner surface of the lifting retainer 60 protruding towards the center. The bottom surface of the limiting portion 61 is recessed upward relative to the bottom surface of the lifting retainer 60, and its recess depth is greater than or equal to the thickness of the wafer. When the lifting retainer 60 is in contact with the carrier plate assembly 40, a gap adapted to the wafer thickness is formed between the bottom surface of the limiting portion 61 and the carrier plate assembly 40 (the surface of the first carrier plate 41). Figure 7 As shown.

[0043] like Figure 4 and Figure 8 As shown, the wafer ejection assembly 70 is disposed in the space in the middle of the base 10. The wafer ejection assembly 70 includes an ejection frame 71 and a plurality of ejection posts 72 disposed on the ejection frame 71. The ejection frame 71 is arranged in the shape of a triangular rod, and the ejection posts 72 are disposed on each rod to maintain the stability of the wafer during ejection. Through holes 44 corresponding to the positions of the ejection posts 72 are provided through the support plate assembly 40 (e.g., ...). Figure 1 and Figure 2 As shown, the ejector post 72 passes through the through hole 44 and can move axially relative to the through hole 44. The wafer ejection assembly 70 can also achieve ejection or retraction operations through a drive structure provided on the base.

[0044] This invention adds a mosquito coil-type heating unit and a thermocouple within the support plate assembly 40, and leads the conductive wires of the heating unit and the thermocouple wires through the outer slip ring assembly 20 to provide electrical energy and temperature monitoring for the target plate structure. The slip ring assembly 20 consists of an inner annular support frame 21, an insulating layer 22 of intermediate insulating material, and an outer conductive ring assembly 23. The conductive ring assembly 23 is connected to the conductive wires of the heating unit 50 and the thermocouple wires of the temperature sensing unit, respectively. The conductive ring assembly 23 makes sliding contact with the graphite brush fixed on the outer base for electrical conduction, providing target plate heating and temperature measurement functions without affecting the rotation of the target plate structure.

[0045] Compared with the prior art, the target disk structure of the present invention, by setting a heating unit in the target disk, can provide electrical energy for heating when the target disk rotates, and move up and down with the target disk to realize the target disk heating function during ion implantation, thereby reducing lattice damage caused by implantation.

[0046] The target disk structure of this invention, by covering the upper surface of the second carrier plate with a heating unit, can achieve uniform heating of the wafer placed on the carrier plate assembly, improve ion implantation efficiency, and further reduce lattice damage caused by implantation.

[0047] The target disk structure of this invention generates electrical energy through the sliding connection between the conductive ring group and the brush, thereby realizing the multi-channel conductivity required for heating, thermocouples (temperature sensing units), and other related heating processes.

[0048] The foregoing description of specific exemplary embodiments of the invention is for illustrative and explanatory purposes. These descriptions are not intended to limit the invention to the precise forms disclosed, and it will be apparent that many changes and variations can be made in accordance with the foregoing teachings. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application, thereby enabling those skilled in the art to implement and utilize various different exemplary embodiments of the invention, as well as various different choices and variations. The scope of the invention is intended to be defined by the claims and their equivalents.

Claims

1. A target disk structure, characterized in that, include: Base; A slip ring assembly is sleeved on the circumferential periphery of the base and fixedly connected to the base. The slip ring assembly includes a conductive ring group formed on the outermost layer. The brush assembly slides in contact with the conductive ring assembly to form an electrical connection, and the brush assembly includes multiple independently arranged brushes. A support plate assembly is supported on the base. The support plate assembly includes a first support plate and a second support plate stacked together. An accommodating space is formed between the first support plate and the second support plate. A support groove is recessed on the upper surface of the second support plate that contacts the first support plate. The first support plate covers the support groove to form the accommodating space. A heating unit is disposed within the accommodating space and electrically connected to the conductive ring group. The heating unit is an electric heating wire, which is distributed in the bearing groove and arranged in an S-shaped meandering pattern or a mosquito coil-like ring pattern on the upper surface of the second bearing plate, and covers the upper surface of the second bearing plate. A temperature sensing unit is disposed within the accommodating space and electrically connected to the conductive ring assembly; The conductive ring assembly includes multiple rings spaced apart in the axial direction, with an insulating ring pad between adjacent rings, and each ring corresponds to one brush. The plurality of rings include two conductive rings and two thermocouple rings. The two conductive rings are electrically connected to the heating unit, and the two thermocouple rings are electrically connected to the temperature sensing unit. The conductive rings and thermocouple rings are arranged alternately.

2. The target disk structure as described in claim 1, characterized in that, The slip ring assembly also includes an annular support frame and an insulating layer. The annular support frame is fixedly connected to the base. The insulating layer is sleeved on the annular support frame, and a receiving groove is formed on the side of the insulating layer away from the annular support frame. The conductive ring assembly is disposed in the receiving groove.

3. The target disk structure as described in claim 2, characterized in that, A plurality of lead holes are formed on the insulating layer, and wires are disposed in the lead holes. The heating unit and the conductive ring group are electrically connected through the wires, and the temperature sensing unit is electrically connected to the conductive ring group through the wires.

4. The target disk structure as described in claim 1, characterized in that, The target disk structure further includes a lifting retaining ring, which is located above and partially covers the support plate assembly. The lifting retaining ring can move up and down relative to the support plate assembly to clamp or release the wafer placed on the first support plate; and / or, The base is provided with a wafer ejection assembly, which includes an ejection frame and ejection posts disposed on the ejection frame; The bearing plate assembly has a through hole corresponding to the position of the ejector column, and the ejector column passes through the through hole and can move axially relative to the through hole.

5. The target disk structure as described in claim 4, characterized in that, The inner surface of the lifting ring has one or more limiting portions protruding towards the center, and when the lifting ring is attached to the carrier plate assembly, a gap adapted to the wafer thickness is formed between the bottom surface of the limiting portion and the carrier plate assembly.

6. The target disk structure as described in claim 1, characterized in that, A heat insulation column is provided between the support plate assembly and the base.

Images