Optical sensor device and packaging method thereof

Abstract

The application provides an optical sensor device and a packaging method thereof. The optical sensor device comprises a light-emitting module, a first structure, a second structure layer and a shielding layer. The first structure and the second structure are respectively located on two sides of the light-emitting module and cover part of the light-emitting module. The light-emitting module comprises a light-emitting area, a light-sensing part and a filter layer. The light-emitting area and the light-sensing part are both located on a side of the light-emitting module close to the first structure. The first structure exposes the light-emitting area and the light-sensing part. The filter layer wraps part of the light-sensing part exposed. The shielding layer is arranged on the first structure and a surface of the light-emitting module facing the first structure, and exposes the light-emitting area and the light-sensing part. The shielding layer avoids the influence of external light on the optical sensor device, thereby improving the optical performance of the optical sensor device. The filter layer integrated on the driving chip is used to replace the filter structure in the prior art, thereby saving the special filter structure and saving space, and thereby reducing the size of the optical sensor device.

Description

Technical Field

[0001] This invention relates to the field of optical sensor design and manufacturing technology, and in particular to an optical sensor device and its packaging method. Background Technology

[0002] Current photoelectric sensors include a chip and a light source mounted on a PCB substrate. The chip and light source are connected by a metal wire, and a cover is placed over the chip and light source, confining them between the PCB substrate and the cover. A filter is also mounted on the cover, with a gap between the light source and the filter. This structure has certain limitations in terms of size reduction. Summary of the Invention

[0003] The purpose of this invention is to provide an optical sensor device and its packaging method, which can reduce the size of the optical sensor device without reducing optical performance, thereby saving space.

[0004] To address the aforementioned problems, the present invention provides an optical sensor device comprising a light-emitting module, a first structure, a second structural layer, and a shielding layer. The first and second structures are located on opposite sides of the light-emitting module and each partially covers the light-emitting module. The light-emitting module includes a light-emitting area, a photosensitive part, and a filter layer. The light-emitting area and the photosensitive part are both located on the side of the light-emitting module closest to the first structure. The first structure exposes the light-emitting area and the photosensitive part. The filter layer covers the exposed portion of the photosensitive part. The shielding layer is disposed on the surfaces of the first structure and the light-emitting module facing the first structure and exposes the light-emitting area and the photosensitive part.

[0005] Optionally, the thickness of the shielding layer does not exceed 75 micrometers.

[0006] Optionally, the shielding layer has holes formed in both the light-emitting area and the photosensitive part, and the aspect ratio of the holes is greater than or equal to 10:1.

[0007] Optionally, the holes are filled with a transparent polymer material, which can separate the external environment from the light-emitting area and the photosensitive part.

[0008] Optionally, the overall thickness of the optical sensor device is less than 400 micrometers.

[0009] Optionally, the light-emitting module further includes a filter layer that covers the surface of the photosensitive part.

[0010] Optionally, the light-emitting module includes a molding compound, a light-emitting unit, and a driver chip, wherein the light-emitting unit and the driver chip are embedded in the molding compound and are spaced apart.

[0011] The light-emitting unit, the molding compound, and the driver chip all have front and back sides arranged opposite to each other. The front sides of the light-emitting unit, the molding compound, and the driver chip are arranged on the same side. The molding compound exposes both the front and back sides of the light-emitting unit, and also exposes the front side of the driver chip.

[0012] The light-emitting unit has a light-emitting area on its front side, and the driving chip has a photosensitive part on its front side.

[0013] Furthermore, the material of the encapsulation layer is an opaque resin material.

[0014] Furthermore, the molding compound has multiple through holes that extend through the front and back sides of the molding compound along its thickness direction, and the through holes are filled with a conductive material. The conductive material filling the through holes is used to connect the circuits on the front and back sides of the molding compound.

[0015] Furthermore, the first structure includes a first passivation layer, a first metal layer, and a second passivation layer sequentially formed on the front side of the molding compound.

[0016] The first passivation layer covers the front side of the molding compound and the front side of the driver chip, and exposes the photosensitive part, the light-emitting area and part of the front side of the molding compound, and also exposes the conductive material in the via from the front side of the molding compound;

[0017] The first metal layer includes a plurality of first pads, the plurality of first pads being located on a portion of the first passivation layer, and the plurality of first pads being electrically connected to the driving chip, the conductive material in the via, and the light-emitting unit, respectively.

[0018] The second passivation layer covers the first passivation layer and the first metal layer, and exposes the photosensitive part and the light-emitting area.

[0019] Furthermore, the second structure includes a third passivation layer, a second metal layer, and a fourth passivation layer sequentially formed on the back side of the molding compound.

[0020] The third passivation layer covers the back side of the molding compound and the back side of the driver chip, and exposes part of the back side of the light-emitting unit, and also exposes the conductive material in the via from the back side of the molding compound;

[0021] The second metal layer includes a plurality of second bonding pads located on a portion of the third passivation layer, the plurality of second bonding pads being electrically connected to the conductive material in the via and the light-emitting unit, respectively; and

[0022] The fourth passivation layer covers the third passivation layer and the second metal layer. The fourth passivation layer has at least two connection holes that expose the second metal layer. The connection holes are filled with a conductive material, which is used for electrical connection to an external circuit.

[0023] On the other hand, the present invention provides a packaging method for an optical sensor device, which, using the aforementioned optical sensor device, includes the following steps:

[0024] A light-emitting module is formed, with a first structure and a second structure layer formed on both sides of the light-emitting module, each covering a portion of the module. The light-emitting module includes a light-emitting area, a photosensitive portion, and a filter layer. The light-emitting area and the photosensitive portion are both located on the side of the light-emitting module closest to the first structure. The first structure exposes the light-emitting area and the photosensitive portion, and the filter layer covers the exposed portion of the photosensitive portion.

[0025] A shielding layer is formed on the surface of the first structure and the light-emitting module facing the first structure, and exposes the light-emitting area and the photosensitive part.

[0026] Optionally, the shielding layer is formed by printing or by using photosensitive materials through a photomask, exposure and development, etc., and holes are formed in the light-emitting area and the photosensitive part.

[0027] Furthermore, after forming the shielding layer, it also includes:

[0028] The pores are filled with a transparent polymer material to separate the external environment from the light-emitting area and the photosensitive part.

[0029] Optionally, specific methods for forming the light-emitting module include:

[0030] A carrier plate is provided, and an adhesive layer is formed on one side of the carrier plate;

[0031] At least one light-emitting unit and a driving chip to be packaged are placed on the adhesive layer at intervals, wherein the light-emitting unit and the driving chip each have a front and a back side disposed opposite to each other, the front side of the light-emitting unit and the front side of the driving chip are disposed on the same side and both face the adhesive layer, the front side of the light-emitting unit has a light-emitting area, and the front side of the driving chip has a photosensitive part.

[0032] A molding compound is filled between the light-emitting unit and the driving chip, and the molding compound is cured to form a molding layer. The molding layer has a front side and a back side disposed opposite to each other. The front side of the molding layer, the light-emitting unit and the driving chip are disposed on the same side, and the molding layer exposes the front side and the back side of the light-emitting unit, as well as the front side of the driving chip.

[0033] Remove the carrier plate;

[0034] Multiple through holes are formed in the molding compound, the through holes penetrate the molding compound along the thickness direction, and the through holes are filled with conductive material;

[0035] A first structure is formed on the front side of the molding compound. This first structure is electrically connected from the front side of the molding compound to the conductive material in the through-hole, and is also electrically connected to the light-emitting unit and the driving chip, respectively.

[0036] A second structure is formed on the back side of the molding compound, and the second structure is electrically connected from the back side of the molding compound to the conductive material in the through hole and the light-emitting unit, respectively.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] This invention provides an optical sensor device and its packaging method. The optical sensor device includes a light-emitting module, a first structure, a second structure layer, and a shielding layer. The first and second structures are located on opposite sides of the light-emitting module and each partially covers the module. The light-emitting module includes a light-emitting area, a photosensitive part, and a filter layer. The light-emitting area and the photosensitive part are both located on the side of the light-emitting module closest to the first structure. The first structure exposes the light-emitting area and the photosensitive part. The filter layer covers the exposed portion of the photosensitive part. The shielding layer is disposed on the surfaces of the first structure and the light-emitting module facing the first structure, and exposes the light-emitting area and the photosensitive part. This invention avoids the influence of external light on the optical sensor device through the shielding layer, thereby improving the optical performance of the optical sensor device. Furthermore, it uses a filter layer integrated onto a driver chip instead of the filter structure in the prior art, saving space and reducing the size of the optical sensor device.

[0039] In addition, the present invention also reduces the size of the optical sensor device by embedding the light-emitting unit and the driving chip in the molding material (i.e., the molding layer) and manufacturing thin film circuits (a first metal layer, a second metal layer and conductive material in the via) on the molding material, thereby saving space. Attached Figure Description

[0040] Figure 1This is a schematic diagram of the structure of an optical sensor device provided in an embodiment of the present invention;

[0041] Figure 2 This is a schematic diagram of the structure of a driver chip provided in an embodiment of the present invention;

[0042] Figure 3 This is a schematic diagram of the structure of a light-emitting device provided in an embodiment of the present invention;

[0043] Figures 4a-4c The structural intent of the packaging process of the optical sensor device provided in one embodiment of the present invention.

[0044] Explanation of reference numerals in the attached figures:

[0045] 110 - Molding layer; 120 - Driver chip; 121 - Main body; 122 - Input / output port; 123 - Photosensitive part; 124 - Filter layer; 130 - Light-emitting device; 131 - First electrode; 132 - Second electrode; 133 - Light-emitting area; 134 - Light-emitting body; 140 - Conductive component; 150 - Through hole; 210 - First passivation layer; 220 - First metal layer; 230 - Second passivation layer; 240 - Third passivation layer; 250 - Second metal layer; 260 - Fourth passivation layer; 270 - Connection hole; 300 - Shielding layer; 310 - Hole. Detailed Implementation

[0046] The following will provide a more detailed description of an optical sensor device and its packaging method according to the present invention. The invention will now be described in more detail with reference to the accompanying drawings, which illustrate preferred embodiments of the invention. It should be understood that those skilled in the art can modify the invention described herein while still achieving its advantageous effects. Therefore, the following description should be understood as being of general knowledge to those skilled in the art and is not intended to limit the invention.

[0047] For clarity, not all features of the actual embodiments are described. In the following description, well-known functions and structures are not detailed in detail, as they would obscure the invention with unnecessary detail. It should be understood that in the development of any actual embodiment, numerous implementation details must be made to achieve the developer's specific objectives, such as changes from one embodiment to another according to limitations related to the system or business. Furthermore, it should be understood that such development work may be complex and time-consuming, but is merely routine work for those skilled in the art.

[0048] To make the objectives and features of the present invention more apparent and understandable, the specific embodiments of the present invention will be further described below with reference to the accompanying drawings. It should be noted that the drawings are all in a very simplified form and use non-precise ratios, and are only used to conveniently and clearly assist in illustrating the objectives of the embodiments of the present invention.

[0049] It should be noted that, for the sake of simplicity and clarity, this embodiment only shows a cross-sectional structural diagram of one light-emitting unit and one driving chip.

[0050] like Figure 1 As shown, this embodiment also provides an optical sensor device, including a light-emitting module, a first structure, a second structural layer, and a shielding layer. The first structure and the second structure are located on both sides of the light-emitting module and each covers a portion of the light-emitting module. The light-emitting module includes a light-emitting area and a photosensitive part, both of which are located on the side of the light-emitting module closer to the first structure. The first structure exposes the light-emitting area and the photosensitive part. The filter layer covers the exposed portion of the photosensitive part. The shielding layer is disposed on the surfaces of the first structure and the light-emitting module facing the first structure and exposes the light-emitting area and the photosensitive part of the light-emitting module.

[0051] like Figure 4c As shown, please also refer to Figure 1 The light-emitting module includes a molding layer 110, a light-emitting unit, and a driver chip 120. The light-emitting unit and the driver chip 120 are embedded in the molding layer 110, and the light-emitting unit and the driver chip 120 are spaced apart.

[0052] The molding layer 110 is made of an opaque resin material (e.g., a black opaque resin material) to prevent light incident from outside the light-emitting module from affecting the driver chip 120.

[0053] In this embodiment, the molding compound 110, the light-emitting unit, and the driver chip 120 all have a front and a back side. The back sides of the molding compound 110, the light-emitting unit, and the driver chip 120 are disposed on the same side, and the front sides of the molding compound 110, the light-emitting unit, and the driver chip 120 are disposed on the same side. The molding compound 110 exposes the front and back sides of the light-emitting unit and also exposes the front side of the driver chip 120. To minimize the thickness of the light-emitting module, the thickness of the molding compound 110 is equal to the thinnest thickness of the light-emitting unit and the driver chip 120. Since the thickness of the light-emitting unit can be varied according to requirements, making the thickness of the molding compound 110 equal to the thickness of the driver chip 120, the molding compound 110 exposes the front and back sides of the driver chip 120, as well as the front and back sides of the light-emitting unit.

[0054] like Figure 2 As shown, please also refer to Figure 1The driver chip 120 includes a main body 121, an input / output port 122, a photosensitive part 123, and a filter layer 124. The input / output port 122 and the photosensitive part 123 are disposed on the same side and spaced apart on the main body 121. The main body 121 is disposed near the back side of the molding compound 110, and the input / output port 122 and the photosensitive part 123 are disposed near the front side of the molding compound 110. The filter layer 124 covers the surface of the photosensitive part 123 exposed by the main body 121. The front side of the molding compound 110 exposes the input / output port 122 and the filter layer 124. The back side of the molding compound 110 may expose the surface of the main body 121 away from the photosensitive part 123, or it may not expose the surface of the main body 121 away from the photosensitive part 123. The photosensitive unit 123 can read the reflected light wave signal after the light emitted by the light-emitting unit is reflected, and feed it back to the main body 121. The main body 121 issues various commands through the input / output port 122.

[0055] The filter layer 124 can filter out certain wavelengths of light signals, such as visible light, allowing only the light signals emitted by the light-emitting region 123 and reflected back from the object to pass through. The filter layer 124 has a thickness of 5 micrometers to 19 micrometers, and allows light signals with wavelengths of 780 nanometers to 1500 nanometers to pass through. The filter layer 124 is made of rare earth elements or silicon dioxide.

[0056] like Figure 1 As shown, the light-emitting unit includes a light-emitting device 130 and a conductive component 140. The conductive component 140 is electrically connected to the light-emitting device 130. The light-emitting device 130 is disposed near the front side of the molding compound 110, and the conductive component 140 is disposed near the back side of the molding compound 110. The back side of the molding compound 110 exposes at least a portion of the surface of the conductive component 140 near the back side of the molding compound 110, and the front side of the molding compound 110 exposes at least a portion of the surface of the light-emitting device 130 near the front side of the molding compound 110. Further, silver paste is disposed between the conductive component 140 and the light-emitting device 130, bonding the conductive component 140 to the light-emitting device 130, so that the conductive component 140 is electrically connected to the light-emitting device 130 through the silver paste to form a vertical conductive structure. Simultaneously, the conductive component 140 provides good heat dissipation.

[0057] like Figure 3 As shown, see also Figure 1The light-emitting device 130 can be an LED or a VCSEL, etc., and is used to emit light signals of a specific wavelength. The light-emitting device 130 includes a light-emitting body 134, a first electrode 131, a second electrode 132, and a light-emitting region 133. The first electrode 131 is, for example, the cathode of the light-emitting unit, and is disposed near the back side of the encapsulation layer 110. The second electrode 132 and the light-emitting region 133 are disposed on the same side and near the front side of the encapsulation layer 110. The second electrode 132 is, for example, the positive electrode of the light-emitting unit. The light-emitting region 133 emits emitted light (e.g., infrared light) when the light-emitting unit is working. The front side of the encapsulation layer 110 exposes the second electrode 132 and the light-emitting region 133, and the back side of the encapsulation layer 110 exposes at least a portion of the surface of the conductive component 140 near the back side of the encapsulation layer 110.

[0058] Please continue reading. Figure 1 The molding compound 110 also has a plurality of through holes 150, which penetrate the front and back sides of the molding compound 110 along the thickness direction. The through holes 150 are filled with a conductive material, which is used to connect the circuits on the front and back sides of the molding compound 110. The conductive material is, for example, a conductive metal, conductive alloy, or conductive adhesive such as Cu (copper), W (tungsten), Ag (silver), or Au (gold).

[0059] The first structure is electrically connected from the front side of the molding layer 110 to the conductive material in the through hole 150, and is also electrically connected to the first electrode 131 of the light-emitting device 130 and the input / output port 122 of the driver chip 120.

[0060] The first structure is located on the front side of the molding compound 110. The first structure includes a first passivation layer 210, a first metal layer 220 and a second passivation layer 230 sequentially formed on the front side of the molding compound 110. The first passivation layer 210 covers the front side of the molding compound 110 and the front side of the driver chip 120, and exposes the input / output port 122 of the driver chip 120, as well as the filter layer 124 above the photosensitive part 123. It also exposes the second electrode 132 and the light-emitting area 133 of the light-emitting device 130, as well as part of the front side of the molding compound 110, and exposes the conductive material in the via 150 from the front side of the molding compound 110.

[0061] The first metal layer 220 includes a plurality of first solder pads located on a portion of the first passivation layer 210. The plurality of first solder pads are electrically connected to the input / output port 122, the conductive material in the via 150, and the second electrode 132, respectively.

[0062] The second passivation layer 230 covers the first passivation layer 210 and the first metal layer 220. The first passivation layer 210 and the second passivation layer 230 are used to electrically isolate the first metal layer 220 to avoid short circuits. The second passivation layer 230 exposes the photosensitive part 123 of the driving chip 120 and the light-emitting area 133 of the light-emitting device 130.

[0063] Both the first passivation layer 210 and the second passivation layer 230 are insulating materials, such as polymer materials, and more specifically, one or a combination of polyimides, benzocyclobutene (BCB) or poly(p-dioxazolebenzene) (PBO).

[0064] The first metal layer 220 can be a metallic material such as Cu, Ag, W or Au, a conductive alloy, a conductive oxide (e.g., ITO), or an inorganic material, or it can be a conductive organic material, such as a conductive polymer. The thickness of the first metal layer 220 on the surface of the first passivation layer 210 is about 3 micrometers to 10 micrometers, preferably 3 micrometers to 5 micrometers.

[0065] The second structure is electrically connected from the back side of the molding layer 110 to the conductive material in the through hole 150 and the conductive component 140, respectively.

[0066] The second structure is located on the back side of the molding compound 110. The second structure includes a third passivation layer 240, a second metal layer 250, and a fourth passivation layer 260 sequentially formed on the back side of the molding compound 110. The third passivation layer 240 covers the back side of the molding compound 110 and the back side of the driver chip 120, and exposes a portion of the back side of the light-emitting unit. It also exposes the conductive material in the via from the back side of the molding compound 110. Specifically, the third passivation layer 240 covers the back side of the molding compound 110 and the surface of the main body 121 away from the photosensitive part 123, and exposes a portion of the conductive component 140 of the light-emitting unit away from the front side of the molding compound 110, as well as exposing the conductive material in the via 150 from the back side.

[0067] The second metal layer 250 includes a plurality of second solder pads located on a portion of the third passivation layer 240, and the plurality of second solder pads are electrically connected to the conductive material in the via 150 and the conductive component 140, respectively.

[0068] It should be noted that when the conductive material in the through hole 150 is electrically connected to the second metal layer 250, it may be electrically connected to the conductive component 140 or not. The specific decision on whether the conductive component 140 and the conductive material in the through hole 150 need to be electrically connected depends on the requirements.

[0069] The fourth passivation layer 260 covers the third passivation layer 240 and the second metal layer 250. The third passivation layer 240 and the fourth passivation layer 260 are used to electrically isolate the second metal layer 250 to prevent it from short-circuiting.

[0070] The fourth passivation layer 260 has at least two connection holes 270, which expose the second metal layer 250. The connection holes 270 are filled with a conductive material, which is used to electrically connect to external circuits (e.g., PCB substrate or FPC substrate).

[0071] Both the third passivation layer 240 and the fourth passivation layer 260 are insulating materials, such as polymer materials, and more specifically, one or a combination of polyimide, benzocyclobutene (BCB), or poly(p-dioxazolebenzene) (PBO). The materials of the first passivation layer 210, the second passivation layer 230, the third passivation layer 240, and the fourth passivation layer 260 can be completely identical, partially identical, or completely different. In this embodiment, the first passivation layer 210, the second passivation layer 230, the third passivation layer 240, and the fourth passivation layer 260 are made of the same material, for example, all of them are polyimide.

[0072] The second metal layer 250 can be a metallic material such as Cu, Ag, W or Au, a conductive alloy, a conductive oxide (e.g., ITO), or an inorganic material, or it can be a conductive organic material, such as a conductive polymer. The thickness of the second metal layer 250 on the surface of the third passivation layer 240 is about 3 micrometers to 10 micrometers, preferably 3 micrometers to 5 micrometers.

[0073] Please continue reading. Figure 1 The optical sensor device further includes a shielding layer 300, which covers the first structure and the light-emitting module from the front side of the molding compound 110. The shielding layer 300 has holes 310 formed above both the light-emitting area 133 and the photosensitive part 123. These holes 310 expose the light-emitting area 133 and the photosensitive part 123, allowing light to exit perpendicularly from the light-emitting area 133 and enter perpendicularly into the photosensitive part 123. This avoids the influence of light entering from other directions on the photosensitive part 123, thereby improving the optical performance of the optical sensor device.

[0074] The thickness of the shielding layer 300 does not exceed 75 micrometers, and the aspect ratio of the hole 310 is greater than or equal to 10:1. The shielding layer 300 is made of an opaque organic polymer material, which allows it to block visible light and has an infrared light transmittance of less than 1%.

[0075] Optionally, the hole 310 is filled with a transparent polymer material to separate the external environment from the light-emitting area 133 and the photosensitive part 123.

[0076] In this embodiment, the light-emitting module embeds the light-emitting unit and the driving chip in the molding compound (i.e., the molding layer). Thin-film circuits (a first metal layer, a second metal layer, and conductive material in the vias) are fabricated on the molding compound, which reduces the size of the optical sensor device and saves space. Furthermore, the light-shielding material is integrated onto the driving chip, saving the need for a dedicated filter structure, which further saves space and makes the overall thickness of the optical sensor device less than 400 micrometers.

[0077] This embodiment also provides a packaging method for an optical sensor device, including the following steps:

[0078] S1: Provide a carrier plate, one side of which has an adhesive layer formed, wherein the shape of the carrier plate is, for example, square or circular, and the carrier plates are all temporary carrier plates.

[0079] S2: At least one light-emitting unit and a driving chip 120 to be packaged are placed at intervals on the adhesive layer, wherein the light-emitting unit and the driving chip 120 each have a front and a back side disposed opposite to each other, the front side of the light-emitting unit and the front side of the driving chip 120 are disposed on the same side and both face the adhesive layer, the front side of the light-emitting unit has a light-emitting area 133, and the front side of the driving chip 120 has a photosensitive part 123.

[0080] S3: Fill the space between the light-emitting unit and the driver chip 120 with molding compound, and cure the molding compound to form a molding layer. The molding layer has a front and a back side disposed opposite to each other. The front sides of the molding layer, the light-emitting unit, and the driver chip 120 are disposed on the same side, and the molding layer exposes the front and back sides of the light-emitting unit, as well as the front side of the driver chip (e.g., ...). Figure 4a (As shown).

[0081] S4: Remove the carrier plate (e.g.) Figure 4b (As shown).

[0082] S5: A plurality of through holes 150 are formed in the molding compound 110. The through holes 150 penetrate the molding compound 110 along its thickness direction and are filled with conductive material. A first structure is formed on the front side of the molding compound 110. The first structure is electrically connected from the front side of the molding compound 110 to the conductive material in the through holes 150, and is also electrically connected to the light-emitting unit and the driver chip 120, respectively. A second structure is formed on the back side of the molding compound 110. The second structure is electrically connected from the back side of the molding compound 110 to the conductive material in the through holes 150 and the light-emitting unit, respectively (e.g., ...). Figure 4c (As shown).

[0083] In this structure, the first passivation layer 210 exposes the input / output port 122 and photosensitive portion 123 of the driver chip 120 through an aperture process, and also exposes the second electrode 132 and light-emitting region 133 of the light-emitting device 130. The third passivation layer 240 of the second structure exposes a portion of the front surface of the conductive component 140 away from the molding compound 110 through an aperture process, and also exposes the conductive material in the via from the back side. The fourth passivation layer 260 of the second structure forms at least two connection holes 270 through an aperture process, the at least two connection holes 270 exposing the second metal layer 250, and is soldered to an external circuit by plating nickel-gold material or solder material at the at least two connection holes 270.

[0084] S6: Form a shielding layer 300, which covers the first structure and the light-emitting module from the front side of the molding layer 110 and exposes the light-emitting area 133 and the photosensitive part 123 (e.g., Figure 1 (As shown).

[0085] In this step, the masking layer 300 is applied to a designated location by printing or by using a photosensitive material through a photomask, exposure, or development. The masking layer 300 forms holes in both the light-emitting area 133 and the photosensitive part 123, and the masking layer 300 can be applied at least to the second passivation layer 230 and the molding compound layer 110.

[0086] Optionally, the hole 310 is then filled with a transparent polymer material to separate the external environment from the light-emitting area 133 and the photosensitive part 123.

[0087] In summary, this invention provides an optical sensor device and its packaging method. By embedding the light-emitting unit and the driving chip in a molding compound (i.e., the molding layer), and fabricating thin-film circuitry (a first metal layer, a second metal layer, and conductive material in vias) on the molding compound, the size of the optical sensor device is reduced, thereby saving space. Furthermore, replacing the existing filter structure with a filter layer integrated onto the driving chip saves space and further reduces the size of the optical sensor device. Additionally, the shielding layer prevents external light from affecting the optical sensor device, thereby improving its optical performance.

[0088] Furthermore, it should be noted that, unless otherwise specified or indicated, the terms "first" and "second" in the specification are used only to distinguish the various components, elements, steps, etc. in the specification, and are not used to indicate the logical or sequential relationships between the various components, elements, steps, etc.

[0089] It is understood that although the present invention has been disclosed above with reference to preferred embodiments, these embodiments are not intended to limit the present invention. For any person skilled in the art, many possible variations and modifications can be made to the technical solutions of the present invention based on the disclosed technical content, or equivalent embodiments can be modified accordingly, without departing from the scope of the present invention. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the present invention shall still fall within the protection scope of the present invention.

Claims

1. An optical sensor device, characterized in that, The device includes a light-emitting module, a first structure, a second structural layer, and a shielding layer. The first and second structures are located on opposite sides of the light-emitting module and each partially covers the module. The light-emitting module includes a light-emitting area, a photosensitive part, and a filter layer. The light-emitting area and the photosensitive part are located on the side of the light-emitting module closest to the first structure. The first structure exposes the light-emitting area and the photosensitive part. The filter layer covers the exposed portion of the photosensitive part. The shielding layer is disposed on the surfaces of the first structure and the light-emitting module facing the first structure and exposes the light-emitting area and the photosensitive part. The thickness of the shielding layer does not exceed 75 micrometers. The shielding layer forms holes in both the light-emitting area and the photosensitive part. The aspect ratio of the holes is greater than or equal to 10:1, and the overall thickness of the optical sensor device is less than 400 micrometers. The holes are filled with a transparent polymer material, which can separate the external environment from the light-emitting area and the photosensitive part.

2. The optical sensor device as claimed in claim 1, characterized in that, The light-emitting module includes a molding compound, a light-emitting unit, and a driver chip. The light-emitting unit and the driver chip are embedded in the molding compound, and a gap is provided between the light-emitting unit and the driver chip. The light-emitting unit, the molding compound, and the driver chip all have front and back sides arranged opposite to each other. The front sides of the light-emitting unit, the molding compound, and the driver chip are arranged on the same side. The molding compound exposes both the front and back sides of the light-emitting unit, and also exposes the front side of the driver chip. The light-emitting unit has a light-emitting area on its front side, and the driving chip has a photosensitive part on its front side.

3. The optical sensor device as described in claim 2, characterized in that, The encapsulation layer is made of an opaque resin material.

4. The optical sensor device as described in claim 2, characterized in that, The molding compound has multiple through holes that extend through the front and back sides of the molding compound along its thickness direction. The through holes are filled with a conductive material, which is used to connect the circuits on the front and back sides of the molding compound.

5. The optical sensor device as described in claim 4, characterized in that, The first structure includes a first passivation layer, a first metal layer, and a second passivation layer sequentially formed on the front side of the molding compound. The first passivation layer covers the front side of the molding compound and the front side of the driver chip, and exposes the photosensitive part, the light-emitting area and part of the front side of the molding compound, and also exposes the conductive material in the via from the front side of the molding compound; The first metal layer includes a plurality of first pads, the plurality of first pads being located on a portion of the first passivation layer, and the plurality of first pads being electrically connected to the driving chip, the conductive material in the via, and the light-emitting unit, respectively. as well as The second passivation layer covers the first passivation layer and the first metal layer, and exposes the photosensitive part and the light-emitting area.

6. The optical sensor device as claimed in claim 4, characterized in that, The second structure includes a third passivation layer, a second metal layer, and a fourth passivation layer sequentially formed on the back side of the molding compound. The third passivation layer covers the back side of the molding compound and the back side of the driver chip, and exposes part of the back side of the light-emitting unit, and also exposes the conductive material in the via from the back side of the molding compound; The second metal layer includes a plurality of second bonding pads located on a portion of the third passivation layer, and the plurality of second bonding pads are electrically connected to the conductive material in the via and the light-emitting unit, respectively. as well as The fourth passivation layer covers the third passivation layer and the second metal layer. The fourth passivation layer has at least two connection holes that expose the second metal layer. The connection holes are filled with a conductive material, which is used for electrical connection to an external circuit.

7. A method for packaging an optical sensor device, employing the optical sensor device as described in any one of claims 1 to 6, characterized in that, Includes the following steps: A light-emitting module is formed, and a first structure and a second structure layer are formed on both sides of the light-emitting module. Both the first structure and the second structure cover a portion of the light-emitting module. The light-emitting module includes a light-emitting area, a photosensitive part, and a filter layer. The light-emitting area and the photosensitive part are both located on the side of the light-emitting module closer to the first structure. The first structure exposes the light-emitting area and the photosensitive part, and the filter layer covers the exposed portion of the photosensitive part. as well as A masking layer is formed by printing or using photosensitive materials through a photomask and exposure and development process, and holes are formed in the light-emitting area and the photosensitive part. The masking layer is located on the surface of the first structure and the light-emitting module facing the first structure, and exposes the light-emitting area and the photosensitive part. The thickness of the masking layer does not exceed 75 micrometers, and holes are formed in both the light-emitting area and the photosensitive part. The aspect ratio of the holes is greater than or equal to 10:1, and the overall thickness of the optical sensor device is less than 400 micrometers. The pores are filled with a transparent polymer material to separate the external environment from the light-emitting area and the photosensitive part.

8. The packaging method for the optical sensor device as described in claim 7, characterized in that, Specific methods for forming light-emitting modules include: A carrier plate is provided, and an adhesive layer is formed on one side of the carrier plate; At least one light-emitting unit and a driving chip to be packaged are placed on the adhesive layer at intervals, wherein the light-emitting unit and the driving chip each have a front and a back side disposed opposite to each other, the front side of the light-emitting unit and the front side of the driving chip are disposed on the same side and both face the adhesive layer, the front side of the light-emitting unit has a light-emitting area, and the front side of the driving chip has a photosensitive part. A molding compound is filled between the light-emitting unit and the driving chip, and the molding compound is cured to form a molding layer. The molding layer has a front side and a back side disposed opposite to each other. The front side of the molding layer, the light-emitting unit and the driving chip are disposed on the same side, and the molding layer exposes the front side and the back side of the light-emitting unit, as well as the front side of the driving chip. Remove the carrier plate; Multiple through holes are formed in the molding compound, the through holes penetrate the molding compound along the thickness direction, and the through holes are filled with conductive material; A first structure is formed on the front side of the molding compound. This first structure is electrically connected from the front side of the molding compound to the conductive material in the through-hole, and is also electrically connected to the light-emitting unit and the driving chip, respectively. A second structure is formed on the back side of the molding compound, and the second structure is electrically connected from the back side of the molding compound to the conductive material in the through hole and the light-emitting unit, respectively.

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