激光阵列器件及其制备方法
By forming through holes and optical structure holes on the epitaxial starting surface of the VCSEL device, front-side light emission of the laser unit is achieved, solving the problems of optical output power and thermal resistance of existing VCSEL devices, and improving optical output power and heat dissipation efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HON HAI PRECISION INDUSTRY CO LTD
- Filing Date
- 2022-05-19
- Publication Date
- 2026-07-17
AI Technical Summary
Existing VCSEL devices have shortcomings in terms of optical output power and thermal resistance. Top-emitting structures have low optical power density, while back-emitting structures have increased resistance and high thermal resistance.
A laser array device is designed to achieve electrical connection between the first conductive layer and the second conductive layer by forming through holes and optical structure holes on the epitaxial starting surface of the laser unit, and to emit light from the front side of the laser unit, thereby reducing the distance between adjacent light-emitting areas. An N-type semiconductor layer is used as a high-reflectivity layer to reduce thermal resistance.
It improves the optical output power and optical power density of laser array devices, reduces thermal resistance, has a high process yield, is compatible with flip-chip technology, and achieves high heat dissipation effect.
Smart Images
Figure CN117134187B_ABST