High frequency module and communication device

Abstract

The high-frequency module (1A) includes: a hybrid filter (11) for n77 of 5G-NR; a filter (12) for n79 of 5G-NR; power amplifiers (61 and 62); a third inductor connected to the power amplifier (61); and a fourth inductor connected to the power amplifier (62). When viewed from above the module substrate (80), the power amplifiers (61 and 62) are arranged in the first quadrant (Q2), the third and fourth inductors are arranged in the second quadrant (Q3), the hybrid filter (11) and the filter (12) are arranged in the third quadrant (Q4), the power amplifier (61) is arranged closer to the reference point (R1) than the power amplifier (62), the third inductor is arranged closer to the reference point (R1) than the fourth inductor, and the hybrid filter (11) is arranged closer to the reference point (R1) than the filter (12).

Description

Technical Field

[0001] This invention relates to a high-frequency module and a communication device. Background Technology

[0002] Patent document 1 discloses a hybrid elastic LC filter comprising an elastic resonator (elastic wave resonator), an inductor, and a capacitor. Based on this, it is believed that a relatively wide passband can be achieved, and strict out-of-band rejection specifications can be met.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-14204 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] However, the hybrid elastic LC filter disclosed in Patent Document 1 is a filter composed of an elastic wave resonator, an inductor, and a capacitor, resulting in a large number of components. Therefore, in a high-frequency module supporting multiple frequency bands with multiple transmission paths and equipped with a hybrid elastic LC filter, the following problem exists: the wiring loss of each transmission path tends to increase, making it impossible to achieve low-loss signal transmission characteristics.

[0008] Therefore, the present invention was made to solve the above-mentioned problems, and its purpose is to provide a high-frequency module and communication device that supports multiple frequency bands, including a hybrid filter and having low-loss signal transmission characteristics.

[0009] Solution for solving the problem

[0010] One aspect of the present invention relates to a high-frequency module comprising: a substrate having a first main surface and a second main surface facing each other; a first hybrid filter having a first elastic wave resonator, a first inductor, and a first capacitor, the passband of the first hybrid filter including n77 of 5G-NR; a first filter having a second elastic wave resonator and a second inductor, the passband of the first filter including n79 of 5G-NR; a first power amplifier and a second power amplifier; a third inductor connected between the first power amplifier and the first hybrid filter; and a fourth inductor connected between the second power amplifier and the first filter, wherein the passband width of the first hybrid filter is greater than the resonant bandwidth of the first elastic wave resonator, and when viewed from above the substrate, (1) is defined as a reference relative to the substrate. In the case that (2) is the first quadrant of the region to the left and upper side of the reference point, (3) is the second quadrant of the region to the left and lower side of the reference point, and (4) is the fourth quadrant of the region to the right and upper side of the reference point, at least a portion of the first power amplifier and at least a portion of the second power amplifier are disposed in the first quadrant, at least a portion of the third inductor and at least a portion of the fourth inductor are disposed in the second quadrant, at least a portion of the first hybrid filter and at least a portion of the first filter are disposed in the third quadrant, the first power amplifier is disposed closer to the reference point than the second power amplifier, the third inductor is disposed closer to the reference point than the fourth inductor, and the first hybrid filter is disposed closer to the reference point than the first filter.

[0011] The effects of the invention

[0012] According to the present invention, it is possible to provide a high-frequency module and communication device that supports multiple frequency bands, including a hybrid filter and having low-loss signal transmission characteristics. Attached Figure Description

[0013] Figure 1 This is a circuit structure diagram of the high-frequency module and communication device involved in the implementation method.

[0014] Figure 2A This is a diagram illustrating an example of the circuit structure of the first hybrid filter involved in the embodiment.

[0015] Figure 2B This is a diagram illustrating an example of the circuit structure of the second hybrid filter involved in the embodiment.

[0016] Figure 3A This is a schematic diagram of the planar structure of the high-frequency module involved in the embodiment.

[0017] Figure 3B This is a schematic cross-sectional view of the high-frequency module involved in the embodiment.

[0018] Figure 3C This is a schematic diagram of the cross-sectional structure of the high-frequency module involved in the modified example. Detailed Implementation

[0019] The embodiments of the present invention will now be described in detail. Furthermore, the embodiments described below are intended to be general or specific examples. The numerical values, shapes, materials, structural elements, arrangements of structural elements, and connection methods shown in the following embodiments are examples and are not intended to limit the present invention. Structural elements in the following embodiments and variations not described in the independent claims are described as arbitrary structural elements. Additionally, the sizes or size ratios of the structural elements shown in the drawings are not necessarily strict. In the figures, substantially identical structures are labeled with the same reference numerals, and sometimes repeated descriptions are omitted or simplified.

[0020] Additionally, in the following text, terms such as parallel and perpendicular that indicate the relationship between elements, rectangular shape that indicates the shape of elements, and numerical range that do not only have a strict meaning, but also include substantially equivalent ranges, such as differences of a few percent or so.

[0021] Furthermore, in the following context, "A is disposed on the first main surface of the substrate" not only refers to A being directly mounted on the first main surface, but also to A being disposed in the space on the first main surface side, which is separated from the substrate by the space on the first main surface side and the space on the second main surface side. That is to say, it includes the following situation: A is mounted on the first main surface via other circuit elements, electrodes, etc.

[0022] Additionally, below, "connection" includes not only direct connections using connection terminals and / or wiring conductors, but also connections via other circuit components. Furthermore, "connected between A and B" refers to a connection between A and B, and between both A and B.

[0023] In the following figures, the x-axis and y-axis are axes orthogonal to each other on a plane parallel to the main surface of the module substrate. The z-axis is perpendicular to the main surface of the module substrate; the positive z-axis direction represents the upward direction, and the negative z-axis direction represents the downward direction.

[0024] Furthermore, in the module structure disclosed herein, "top view" refers to observing an object by projecting it onto the xy plane from the positive z-axis side. "Component disposed on the main surface of the substrate" includes not only the case where the component is disposed on the main surface of the substrate in contact with it, but also the case where the component is disposed above the main surface without contacting it, and the case where a portion of the component is embedded into the substrate from the main surface side.

[0025] Furthermore, in the following context, among A, B, and C mounted on the substrate, "when viewing the substrate (or the main surface of the substrate) from above, C is positioned between A and B" means that when viewing the substrate from above, at least one of the multiple line segments connecting any point in A to any point in B passes through the area of ​​C. Additionally, viewing the substrate from above means observing the substrate and the circuit elements mounted on it by projecting them orthographically onto a plane parallel to the main surface of the substrate.

[0026] Additionally, below, "transmission path" refers to a transmission line consisting of wiring for transmitting high-frequency transmission signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes. Similarly, "reception path" refers to a transmission line consisting of wiring for transmitting high-frequency reception signals, electrodes directly connected to the wiring, and terminals directly connected to the wiring or electrodes.

[0027] (Implementation Method)

[0028] [1. Structure of the high-frequency module 1 and communication device 5 involved in the embodiment]

[0029] Figure 1 This is a circuit diagram of the high-frequency module 1 and the communication device 5 according to the embodiment. As shown in the figure, the communication device 5 includes a high-frequency module 1, antennas 2A and 2B, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.

[0030] RFIC 3 is an RF signal processing circuit that processes the high-frequency signals transmitted and received using antennas 2A and 2B. Specifically, RFIC 3 processes the received signal input through the receiving path of high-frequency module 1 using down-conversion and other methods, and outputs the resulting received signal to BBIC 4. Additionally, RFIC 3 outputs the high-frequency transmit signal obtained by processing the signal input from BBIC 4 to the transmit path of high-frequency module 1.

[0031] BBIC 4 is a circuit that uses signals with frequencies lower than the high-frequency signals transmitted in high-frequency module 1 for data processing. The signals processed by BBIC 4 are used, for example, as image signals to display images, or as sound signals to enable communication via a speaker.

[0032] Furthermore, RFIC 3 functions as a control unit to control the connections of switches 30, 31, and 32 of the high-frequency module 1 based on whether the high-frequency module 1 is used for transmitting or receiving, and the communication frequency band (band) used. Specifically, RFIC 3 switches the connections of switches 30, 31, and 32 of the high-frequency module 1 according to control signals (not shown). Alternatively, the control unit can be located externally to RFIC 3, for example, within the high-frequency module 1 or BBIC 4.

[0033] In addition, RFIC 3 also functions as a control unit to control the gain of the power amplifiers 61 and 62 in the high-frequency module 1, as well as the power supply voltage Vcc and bias voltage Vbias supplied to the power amplifiers 61 and 62.

[0034] Antenna 2A is connected to antenna connection terminal 110 of high-frequency module 1, radiating high-frequency signals output from high-frequency module 1. Additionally, it receives high-frequency signals from external sources and outputs them back to high-frequency module 1. Antenna 2B is connected to antenna connection terminal 120 of high-frequency module 1, radiating high-frequency signals output from high-frequency module 1. Additionally, it receives high-frequency signals from external sources and outputs them back to high-frequency module 1.

[0035] Furthermore, in the communication device 5 according to this embodiment, antennas 2A, 2B and BBIC 4 are not essential structural elements.

[0036] Next, the detailed structure of high-frequency module 1 will be described.

[0037] like Figure 1 As shown, the high-frequency module 1 includes antenna connection terminals 110 and 120, a switch 30, and high-frequency circuits 10 and 20.

[0038] Antenna connection terminal 110 is the first antenna common terminal connected to antenna 2A, and antenna connection terminal 120 is the second antenna common terminal connected to antenna 2B.

[0039] Switch 30 is an example of a third switch, having common terminals 30a and 30b, and selection terminals 30c, 30d, 30e, and 30f. Switch 30 switches the connection and non-connection of at least one of the common terminal 30a and selection terminals 30c-30f, and switches the connection and non-connection of at least one of the common terminal 30b and selection terminals 30c-30f. Common terminal 30a is connected to antenna connection terminal 110. Common terminal 30b is connected to antenna connection terminal 120. Selection terminal 30c is connected to hybrid filter 11. Selection terminal 30d is connected to filter 12. Selection terminal 30e is connected to hybrid filter 21. Selection terminal 30f is connected to filter 22. Switch 30 switches the connection and non-connection of hybrid filter 11 and antenna connection terminal 110, and switches the connection and non-connection of hybrid filter 11 and antenna connection terminal 120. Additionally, switch 30 switches between the connection and disconnection of filter 12 and antenna connection terminal 110, and between filter 12 and antenna connection terminal 120. Furthermore, switch 30 switches between the connection and disconnection of hybrid filter 21 and antenna connection terminal 110, and between hybrid filter 21 and antenna connection terminal 120. Additionally, switch 30 switches between the connection and disconnection of filter 22 and antenna connection terminal 110, and between filter 22 and antenna connection terminal 120.

[0040] According to the above connection structure of switch 30, communication device 5 can connect antenna 2A to at least one of hybrid filters 11 and 21, and filters 12 and 22. In addition, it can connect antenna 2B to at least one of hybrid filters 11 and 21, and filters 12 and 22.

[0041] The high-frequency circuit 10 includes receive output terminals 130 and 150, transmit input terminals 140 and 160, a mixing filter 11, a filter 12, switches 31 and 32, matching circuits 41, 42, 43 and 44, low-noise amplifiers 51 and 52, and power amplifiers 61 and 62.

[0042] Hybrid filter 11 is an example of a first hybrid filter, comprising one or more first elastic wave resonators, one or more first inductors, and one or more first capacitors. One terminal of hybrid filter 11 is connected to selection terminal 30c, and the other terminal is connected to switch 31. The passband of hybrid filter 11 includes 5G-NR (5th Generation New Radio) n77 (first communication band: 3300MHz-4200MHz).

[0043] Filter 12 is an example of the first filter, and it is a filter having one or more second elastic wave resonators and one or more second inductors. One terminal of filter 12 is connected to selection terminal 30d, and the other terminal is connected to switch 32. The passband of filter 12 includes 5G-NR n79 (second communication frequency band: 4400MHz-5000MHz).

[0044] Furthermore, the first elastic wave resonator and the second elastic wave element are, for example, elastic wave resonators using SAW (Surface Acoustic Wave) or elastic wave resonators using BAW (Bulk Acoustic Wave).

[0045] Figure 2A This is a diagram illustrating an example of the circuit structure of the hybrid filter 11 according to the embodiment. As shown in the diagram, the hybrid filter 11 includes elastic wave resonators P1 and P2, a capacitor C3, and inductors L1, L2, and L3. The elastic wave resonators P1 and P2 are examples of first elastic wave resonators, the inductors L1, L2, and L3 are examples of first inductors, and the capacitor C3 is an example of a first capacitor.

[0046] Inductor L3 and capacitor C3 constitute an LC parallel resonant circuit. The series connection circuit between elastic wave resonator P1 and inductor L1 is configured between a node on the path connecting input / output terminal 101 to the aforementioned LC parallel resonant circuit and ground. The series connection circuit between elastic wave resonator P2 and inductor L2 is configured between a node on the path connecting input / output terminal 102 to the aforementioned LC parallel resonant circuit and ground. Elastic wave resonators P1 and P2 form elastic wave resonator A1, which may be integrated, for example, as a single chip. Furthermore, multiple elastic wave resonators integrated as a single chip are defined as follows: multiple elastic wave resonators are formed on a single piezoelectric substrate, or multiple elastic wave resonators are included in a single package.

[0047] In the above structure, the passband and attenuation band of the hybrid filter 11 are formed by adjusting the resonant frequency of the LC parallel resonant circuit composed of inductor L3 and capacitor C3, as well as the resonant and anti-resonant frequencies of the elastic wave resonators P1 and P2. The passband of the hybrid filter 11 is formed by the LC parallel resonant circuit composed of inductor L3 and capacitor C3, and the attenuation poles are formed by the elastic wave resonators P1 and P2.

[0048] In other words, the hybrid filter 11 can ensure a wide passband that is not achievable using an elastic wave resonator through an LC circuit, and can ensure a steep attenuation slope that is not achievable using an LC circuit through an elastic wave resonator.

[0049] Based on this viewpoint, the passband width of the hybrid filter 11 is larger than the resonant bandwidth of the elastic wave harmonic oscillators P1 and P2.

[0050] Furthermore, in this embodiment, the resonant bandwidth of the elastic wave resonator is defined as the difference between the anti-resonant frequency and the resonant frequency. Additionally, the relative resonant bandwidth is defined as the ratio obtained by dividing the aforementioned resonant bandwidth by the midpoint between the anti-resonant frequency and the resonant frequency. It is known that typical SAW and BAW resonators have a relative resonant bandwidth of 3% to 4% in the 0.1 GHz to 10 GHz frequency band.

[0051] Furthermore, filter 12 may not have a capacitor, and the passband width of filter 12 may be below the resonant bandwidth of the second elastic wave harmonic oscillator.

[0052] Return to Figure 1 This describes the circuit components of the high-frequency circuit 10.

[0053] Low-noise amplifier 51 is an example of a first low-noise amplifier, which amplifies the received signal of the first communication band with low noise and outputs it to the receive output terminal 130. Low-noise amplifier 52 is an example of a second low-noise amplifier, which amplifies the received signal of the second communication band with low noise and outputs it to the receive output terminal 150.

[0054] Power amplifier 61, an example of a first power amplifier, amplifies the transmitted signal of a first communication frequency band input from the transmit input terminal 140. Power amplifier 62 amplifies the transmitted signal of a second communication frequency band input from the transmit input terminal 160.

[0055] Matching circuit 41 is connected between low-noise amplifier 51 and switch 31 to achieve impedance matching between them. Matching circuit 42 is connected between power amplifier 61 and switch 31 to achieve impedance matching between them. Matching circuit 43 is connected between low-noise amplifier 52 and switch 32 to achieve impedance matching between them. Matching circuit 44 is connected between power amplifier 62 and switch 32 to achieve impedance matching between them.

[0056] Switch 31, an example of the first switch, has a common terminal and two select terminals. The common terminal of switch 31 is connected to the mixing filter 11. One select terminal of switch 31 is connected to the input terminal of the low-noise amplifier 51 via matching circuit 41, and the other select terminal of switch 31 is connected to the output terminal of the power amplifier 61 via matching circuit 42. In other words, switch 31, connected to the mixing filter 11, the low-noise amplifier 51, and the power amplifier 61, is a time-division duplex (TDD) switch that switches the connection between the mixing filter 11 and the low-noise amplifier 51, and between the mixing filter 11 and the power amplifier 61. Switch 31 may be constructed, for example, as a single-pole double-throw (SPDT) type switching circuit.

[0057] According to switch 31, the hybrid filter 11 functions as a transmit / receive filter connected to the low-noise amplifier 51 and the power amplifier 61.

[0058] Switch 32 is an example of a second switch, having a common terminal and two select terminals. The common terminal of switch 32 is connected to filter 12. One select terminal of switch 32 is connected to low-noise amplifier 52 via matching circuit 43, and the other select terminal of switch 32 is connected to power amplifier 62 via matching circuit 44. In other words, switch 32 is a TDD switch that switches the connection between filter 12 and low-noise amplifier 52, and between filter 12 and power amplifier 62. Switch 32 may be constructed, for example, by an SPDT-type switch circuit.

[0059] According to switch 32, filter 12 functions as a transmit / receive filter connected to low-noise amplifier 52 and power amplifier 62.

[0060] The high-frequency circuit 20 includes receiver output terminals 170 and 180, a mixing filter 21, a filter 22, matching circuits 45 and 46, and low-noise amplifiers 53 and 54.

[0061] Hybrid filter 21 is an example of a second hybrid filter, comprising one or more third elastic wave resonators, one or more fifth inductors, and one or more second capacitors. One terminal of hybrid filter 21 is connected to selection terminal 30e, and the other terminal is connected to low-noise amplifier 53 via matching circuit 45. Furthermore, hybrid filter 21 is not connected to a power amplifier. The passband of hybrid filter 21 includes n77 of 5G-NR.

[0062] Accordingly, the hybrid filter 21 functions as a dedicated receiver filter connected between the switch 30 and the low-noise amplifier 53.

[0063] Filter 22 is an example of a second filter, and it is a filter having one or more fourth elastic wave resonators and one or more sixth inductors. One terminal of filter 22 is connected to selection terminal 30f, and the other terminal is connected to low-noise amplifier 54 via matching circuit 46. Furthermore, filter 22 is not connected to a power amplifier. The passband of filter 22 includes n79 of 5G-NR.

[0064] Accordingly, filter 22 functions as a dedicated receiving filter connected to switch 30.

[0065] Furthermore, the third elastic wave resonator and the fourth elastic wave element are, for example, elastic wave resonators using SAW or elastic wave resonators using BAW.

[0066] Figure 2B This is a diagram illustrating an example of the circuit structure of the hybrid filter 21 according to the embodiment. As shown in the diagram, the hybrid filter 21 includes elastic wave resonators P5 and P6, a capacitor C4, and inductors L4, L5, and L6. The elastic wave resonators P5 and P6 are examples of second elastic wave resonators, the inductors L4, L5, and L6 are examples of second inductors, and the capacitor C4 is an example of a second capacitor.

[0067] Inductor L4 and capacitor C4 constitute an LC parallel resonant circuit. The series connection circuit between elastic wave resonator P5 and inductor L5 is configured between a node on the path connecting input / output terminal 103 to the aforementioned LC parallel resonant circuit and ground. The series connection circuit between elastic wave resonator P6 and inductor L6 is configured between a node on the path connecting input / output terminal 104 to the aforementioned LC parallel resonant circuit and ground. Elastic wave resonators P5 and P6 form elastic wave resonator A2, which can be integrated, for example, as a single chip.

[0068] In the above structure, the passband and attenuation band of the hybrid filter 21 are formed by adjusting the resonant frequency of the LC parallel resonant circuit composed of inductor L4 and capacitor C4, as well as the resonant and anti-resonant frequencies of the elastic wave resonators P5 and P6. The passband of the hybrid filter 21 is formed by the LC parallel resonant circuit composed of inductor L4 and capacitor C4, and the attenuation poles are formed by the elastic wave resonators P5 and P6.

[0069] In other words, the hybrid filter 21 can ensure a wide passband that is not achievable using an elastic wave resonator through an LC circuit, and can ensure a steep attenuation slope that is not achievable using an LC circuit through an elastic wave resonator.

[0070] Based on this viewpoint, the passband width of the hybrid filter 21 is larger than the resonant bandwidth of the elastic wave resonators P5 and P6.

[0071] Furthermore, filter 22 may not have a capacitor, and the passband width of filter 22 may be below the resonant bandwidth of the fourth elastic wave harmonic oscillator.

[0072] Return to Figure 1 This describes the circuit components of the high-frequency circuit 20.

[0073] Low-noise amplifier 53 is an example of a third low-noise amplifier, which amplifies the received signal of the first communication band with low noise and outputs it to the receive output terminal 170. Low-noise amplifier 54 is an amplifier that amplifies the received signal of the second communication band with low noise and outputs it to the receive output terminal 180.

[0074] Matching circuit 45 is connected between low-noise amplifier 53 and hybrid filter 21 to achieve impedance matching between low-noise amplifier 53 and hybrid filter 21. Matching circuit 46 is connected between low-noise amplifier 54 and filter 22 to achieve impedance matching between low-noise amplifier 54 and filter 22.

[0075] According to the above circuit structure, the high-frequency module 1 can transmit the transmission and reception signals of the first communication frequency band and the transmission and reception signals of the second communication frequency band separately, and can also transmit at least two of them simultaneously.

[0076] The first transmission path, equipped with a power amplifier 61, a matching circuit 42, a switch 31, a hybrid filter 11, and a switch 30, transmits the transmission signal of the first communication frequency band (n77 of 5G-NR).

[0077] The second transmission path, equipped with a power amplifier 62, a matching circuit 44, a switch 32, a filter 12, and a switch 30, transmits the transmission signal of the second communication frequency band (n79 of 5G-NR).

[0078] The first receiving path, equipped with switch 30, hybrid filter 11, switch 31, matching circuit 41 and low noise amplifier 51, transmits the received signal of the first communication frequency band (n77 of 5G-NR).

[0079] The second receiving path, equipped with switch 30, filter 12, switch 32, matching circuit 43 and low noise amplifier 52, transmits the received signal of the second communication frequency band (n79 of 5G-NR).

[0080] The third receiving path, equipped with switch 30, hybrid filter 21, matching circuit 45 and low noise amplifier 53, transmits the received signal of the first communication frequency band (n77 of 5G-NR).

[0081] The fourth receiving path, equipped with switch 30, filter 22, matching circuit 46 and low noise amplifier 54, transmits the received signal of the second communication frequency band (n79 of 5G-NR).

[0082] In the aforementioned high-frequency module 1, the first communication band (n77 of 5G-NR) is used in a wider geographical area than the second communication band (n79 of 5G-NR). In other words, the first communication band (n77 of 5G-NR) is used more frequently than the second communication band (n79 of 5G-NR).

[0083] In other words, the first transmission path is used more frequently in the first transmission path and the second transmission path. Additionally, the first reception path is used more frequently in the first reception path and the second reception path. Furthermore, the third reception path is used more frequently in the third and fourth reception paths.

[0084] Alternatively, at least two of the low-noise amplifiers 51, 52, 53, and 54, and switches 30, 31, and 32 may be formed within a single semiconductor IC. The semiconductor IC may be constructed using, for example, CMOS. Specifically, it is formed using an SOI process. This allows for the inexpensive manufacture of the semiconductor IC. Furthermore, the semiconductor IC may also be constructed using at least one of GaAs, SiGe, and GaN. This enables the output of high-frequency signals with high-quality amplification and noise reduction performance.

[0085] Furthermore, the circuit structures of the hybrid filters 11 and 21 involved in this embodiment are not limited to... Figure 2A and Figure 2B The circuit structure is as follows. As long as the hybrid filters 11 and 21 according to this embodiment each have one or more elastic wave resonators, one or more inductors, and one or more capacitors, the passband width of the hybrid filter is greater than the resonant bandwidth of the elastic wave resonator. Furthermore, as the circuit structure of the hybrid filters 11 and 21 according to this embodiment, no switch is placed between the elastic wave resonator and the LC circuit. For example, in the hybrid filter 11, no switch is inserted between the LC parallel resonant circuit composed of inductor L3 and capacitor C3 and the elastic wave resonator P1, or between the LC parallel resonant circuit and the elastic wave resonator P2.

[0086] Additionally, one terminal of the hybrid filter 11 and one terminal of the filter 12 can also be connected to the same selection terminal of the switch 30. Similarly, one terminal of the hybrid filter 21 and one terminal of the filter 22 can also be connected to the same selection terminal of the switch 30.

[0087] Alternatively, filters can be connected between switch 31 and low-noise amplifier 51, between switch 31 and power amplifier 61, between switch 32 and low-noise amplifier 52, and between switch 32 and power amplifier 62.

[0088] Furthermore, the high-frequency module 1 involved in this embodiment only needs to have at least Figure 1 The circuit components and elements shown include the hybrid filter 11, filter 12, power amplifiers 61 and 62, and matching circuits 42 and 44.

[0089] Here, the high-frequency module 1 with the above-described circuit structure includes a hybrid filter composed of an elastic wave resonator, an inductor, and a capacitor, thus having a large number of components. Consequently, in the high-frequency module 1, the wiring loss of each transmission path tends to increase.

[0090] In contrast, the structure of the high-frequency module 1, which reduces wiring losses in the transmission path, is described below.

[0091] [2. Circuit element configuration structure of the high-frequency module 1A involved in the embodiment]

[0092] Figure 3A This is a schematic planar structural diagram of the high-frequency module 1A involved in the embodiment. Additionally, Figure 3B This is a schematic cross-sectional view of the high-frequency module 1A involved in the embodiment; specifically, it is... Figure 3A A cross-sectional view at line IIIB-IIIB. Furthermore, in Figure 3A (a) shows a configuration diagram of the circuit components when viewed from the positive z-axis direction, considering the main surface 80a of the opposing main surfaces 80a and 80b of the module substrate 80. On the other hand, in Figure 3A (b) shows a perspective view of the arrangement of circuit components when viewed from the positive z-axis direction on the main surface 80b. Additionally, in Figure 3A In the original text, each circuit component was marked with a label indicating its function to make it easy to understand the configuration relationship of each circuit component, but the actual high-frequency module 1A did not have this label.

[0093] The high-frequency module 1A involved in the embodiment specifically illustrates the configuration structure of each circuit element constituting the high-frequency module 1 involved in the embodiment.

[0094] like Figure 3A and Figure 3B As shown, the high-frequency module 1A involved in this embodiment, in addition to having Figure 1 In addition to the circuit structure shown, it also includes a module substrate 80, resin components 81 and 82, external connection terminals 100, and a metal shielding layer 85.

[0095] The module substrate 80 is an example of a substrate, having main surfaces 80a and 80b facing each other, and is a substrate for mounting circuit components constituting the high-frequency module 1A. For example, the module substrate 80 can be a low-temperature co-fired ceramic (LTCC) substrate with a multi-dielectric layer stacked structure, a high-temperature co-fired ceramic (HTCC) substrate, a component-embedded substrate, a substrate with a redistribution layer (RDL), or a printed circuit board.

[0096] Furthermore, in this embodiment, main surface 80a is equivalent to the first main surface, and main surface 80b is equivalent to the second main surface.

[0097] Furthermore, the module substrate 80 is an example of a substrate, and it is desirable that the module substrate 80 has a multilayer structure consisting of multiple dielectric layers stacked together, with at least one of the multiple dielectric layers having a ground electrode pattern formed thereon. This improves the electromagnetic field shielding capability of the module substrate 80.

[0098] Alternatively, it could be, such as Figure 3A As shown in (b), antenna connection terminals 110 and 120, transmit input terminals 140 and 160, and receive output terminals 130, 150, 170 and 180 are formed on the main surface 80b.

[0099] Resin component 81 is disposed on main surface 80a, covering a portion of the circuit components constituting high-frequency module 1A and main surface 80a. Resin component 82 is disposed on main surface 80b, covering a portion of the circuit components constituting high-frequency module 1A and main surface 80b. Resin components 81 and 82 have the function of ensuring the reliability of the circuit components constituting high-frequency module 1A, such as mechanical strength and moisture resistance.

[0100] A metal shielding layer 85 covers the surface of the resin component 81 and is set to ground potential. The metal shielding layer 85 is, for example, a thin metal film formed by sputtering.

[0101] Furthermore, the resin components 81 and 82 and the metal shielding layer 85 are not essential structural elements of the high-frequency module 1 involved in this embodiment.

[0102] In this embodiment, matching circuits 41 to 46 each include an inductor. Matching circuit 42 includes a third inductor, and matching circuit 44 includes a fourth inductor.

[0103] In addition, although Figure 3A Not shown in the image, but will Figure 1The wiring connecting the various circuit components shown is formed inside the module substrate 80, on the main surfaces 80a and 80b. In addition, the above wiring can be a bonding line whose two ends are connected to the main surfaces 80a and 80b and any of the circuit components constituting the high-frequency module 1A, or it can be a terminal, electrode or wiring formed on the surface of the circuit components constituting the high-frequency module 1A.

[0104] like Figure 3A As shown, in the high-frequency module 1A of this embodiment, hybrid filters 11 and 21, filters 12 and 22, power amplifiers 61 and 62, and matching circuits 42, 44, 45, and 46 are disposed on the main surface 80a. On the other hand, switches 30, 31, and 32, and low-noise amplifiers 51, 52, 53, and 54 are disposed on the main surface 80b. In addition, matching circuits 41 and 43 are disposed inside the module substrate 80.

[0105] According to the above structure, the hybrid filter 11, filter 12, power amplifiers 61 and 62 constituting the high-frequency module 1A, along with low-noise amplifiers 51-54 and switches 30-32, are distributed on both sides of the module substrate 80 across the module substrate 80. This allows for the miniaturization of the high-frequency module 1A.

[0106] Furthermore, as long as at least one of the circuit components constituting the high-frequency module 1A is disposed on the main surface 80a and at least one of the others is disposed on the main surface 80b, the placement of each circuit component on either the main surface 80a or 80b is not limited. Figure 3A The configuration structure is shown in the figure. In addition, the matching circuit 41 can also be configured on the main surface 80a or the main surface 80b, and the matching circuit 43 can also be configured on the main surface 80a or the main surface 80b.

[0107] In this embodiment, the elastic wave resonators P1 and P2, capacitor C3, and inductors L1, L2, and L3 constituting the hybrid filter 11 are disposed on the main surface 80a. On the other hand, low-noise amplifiers 51 and 52 are disposed on the main surface 80b. Furthermore, at least one of the elastic wave resonators P1 and P2, capacitor C3, and inductors L1, L2, and L3 may also be disposed on the main surface 80a, and at least one of the others may be disposed inside the module substrate 80 or on the main surface 80b. Accordingly, a portion of the circuit elements of the hybrid filter 11 and the low-noise amplifiers 51 and 52 are distributed across both sides of the module substrate 80, thereby enabling miniaturization of the high-frequency module 1A.

[0108] Alternatively, at least one of the elastic wave resonator A3 (second elastic wave resonator) and inductor L7 (second inductor) constituting the filter 12 may be disposed on the main surface 80a, and at least one of the other may be disposed inside the module substrate 80 or on the main surface 80b.

[0109] Here, as Figure 3A As shown in (a), in the high-frequency module 1A of this embodiment, when viewed from above the module substrate 80, the following quadrants are defined: (1) a first quadrant Q2, which is the region to the left and above the reference point R1 on the module substrate 80; (2) a second quadrant Q3, which is the region to the left and below the reference point R1; (3) a third quadrant Q4, which is the region to the right and below the reference point R1; and (4) a fourth quadrant Q1, which is the region to the right and above the reference point R1. In this case, at least a portion of the power amplifier 61 and at least a portion of the power amplifier 62 are disposed in the first quadrant Q2, and at least a portion of the third inductor included in the matching circuit 42 and at least a portion of the fourth inductor included in the matching circuit 44 are disposed in the second quadrant Q3. In addition, at least a portion of the hybrid filter 11 and at least a portion of the filter 12 are disposed in the third quadrant Q4. At this time, the distance d1 between the power amplifier 61 and the reference point R1 is less than the distance d2 between the power amplifier 62 and the reference point R1. Furthermore, the distance d3 between the third inductor and the reference point R1 is less than the distance d4 between the fourth inductor and the reference point R1. Additionally, the distance d5 between the hybrid filter 11 and the reference point R1 is less than the distance d6 between the filter 12 and the reference point R1. In other words, power amplifier 61 is positioned closer to the reference point R1 than power amplifier 62, the third inductor is positioned closer to the reference point R1 than the fourth inductor, and hybrid filter 11 is positioned closer to the reference point R1 than filter 12.

[0110] Furthermore, the reference point R1 on the module substrate 80 is defined as any point on the module substrate 80 other than its outer edge when viewed from above. In other words, the reference point R1 is a point arranged on the module substrate 80 such that, when viewed from above, a first quadrant Q2, a second quadrant Q3, a third quadrant Q4, and a fourth quadrant Q1 can exist on the module substrate 80.

[0111] Accordingly, the power amplifier 61, matching circuit 42, and mixing filter 11, configured in the first transmission path, are respectively positioned in the first quadrant Q2, the second quadrant Q3, and the third quadrant Q4. Therefore, the first transmission path can be formed as a short counter-clockwise path centered on the reference point R1 when viewed from above the module substrate 80 in the positive z-axis direction. Similarly, the power amplifier 62, matching circuit 44, and filter 12, configured in the second transmission path, are respectively positioned in the first quadrant Q2, the second quadrant Q3, and the third quadrant Q4. Therefore, the second transmission path can also be formed as a short counter-clockwise path centered on the reference point R1 when viewed from above the module substrate 80 in the positive z-axis direction. This allows for the shortening of both the first and second transmission paths for transmitting high-output signals, thus enabling the realization of a high-frequency module 1A that supports multiple frequency bands and features low-loss signal transmission characteristics. Furthermore, it reduces the power consumption of the high-frequency module 1A.

[0112] Furthermore, since power amplifier 61 is positioned closer to reference point R1 than power amplifier 62, third inductor is positioned closer to reference point R1 than fourth inductor, and hybrid filter 11 is positioned closer to reference point R1 than filter 12, the first transmission path can be made shorter than the second transmission path.

[0113] Accordingly, it is possible to transmit signals in the first communication frequency band (n77 of 5G-NR) which has a wide range of usage areas and high usage frequency with lower loss. Therefore, the high-frequency module 1A that supports multiple frequency bands can be efficiently reduced in loss.

[0114] Furthermore, in this embodiment, at least a portion of the hybrid filter 21 and at least a portion of the filter 22 may also be configured in a region outside the fourth quadrant Q1. Accordingly, the circuit components constituting the high-frequency module 1A can be uniformly and densely mounted.

[0115] Furthermore, in the high-frequency module 1A of this embodiment, a plurality of external connection terminals 100 are disposed on the main surface 80b. The high-frequency module 1A exchanges electrical signals with an external substrate disposed on the negative z-axis side of the high-frequency module 1A via the plurality of external connection terminals 100. Alternatively, as... Figure 3A As shown in (b), several of the plurality of external connection terminals 100 are antenna connection terminals 110 and 120, transmit input terminals 140 and 160, and receive output terminals 130, 150, 170 and 180. In addition, several other of the plurality of external connection terminals 100 are set to the ground potential of the external substrate.

[0116] In addition, the external connection terminal 100 can be used as follows: Figure 3A and Figure 3BAs shown, the columnar electrode extends through the resin member 82 along the z-axis. Alternatively, the external connection terminal 100 may be a bump electrode formed on the main surface 80b. In this case, the resin member 82 on the main surface 80b may not be present.

[0117] Here, power amplifiers 61 and 62, which are difficult to reduce in height, as well as the third and fourth inductors, are arranged on the main surface 80a. Accordingly, circuit components that are difficult to reduce in height are not arranged on the main surface 80b, thus making it easy to reduce the height of the main surface 80b side of the high-frequency module 1A.

[0118] Furthermore, on the main surface 80b, which faces the external substrate, low-noise amplifiers 51-54 and switches 30-32, whose height can be easily reduced, are arranged. Therefore, by arranging the circuit components on the main surface 80b, whose height can be easily reduced, the height of the high-frequency module 1A on the main surface 80b side can be easily reduced. In other words, the height of the high-frequency module 1A can be reduced.

[0119] Furthermore, the low-noise amplifiers 51-54 and the switch 30 are included in the semiconductor IC 71. Accordingly, the low-noise amplifiers 51-54 and the switch 30 can be miniaturized and their height reduced.

[0120] Furthermore, switches 31 and 32 are included in semiconductor IC 72. Accordingly, switches 31 and 32 can be miniaturized and their height reduced.

[0121] By configuring semiconductor ICs 71 and 72 on the main surface 80b, the height of the high-frequency module 1A can be reduced.

[0122] Here, as Figure 3A and Figure 3B As shown, when viewed from above the module substrate 80, the hybrid filter 11 and the switch 30 overlap at least partially.

[0123] Accordingly, the hybrid filter 11 and the switch 30, through which both the transmitted and received signals pass, can be connected primarily by a path wiring formed within the module substrate 80 along the vertical direction of the module substrate 80. Therefore, the wiring connecting the hybrid filter 11 and the switch 30 can be shortened, reducing transmission losses of the transmitted and received signals in the first communication frequency band.

[0124] Additionally, the elastic wave resonators P5 and P6, capacitor C4, and inductors L4, L5, and L6 constituting the hybrid filter 21 are arranged on the main surface 80a. On the other hand, a low-noise amplifier 53 connected to the hybrid filter 21 via a matching circuit 45 is arranged on the main surface 80b.

[0125] Here, as Figure 3A and Figure 3BAs shown, when viewed from above the module substrate 80, the hybrid filter 21 and the low-noise amplifier 53 overlap at least partially.

[0126] Accordingly, the hybrid filter 21 and the low-noise amplifier 53 can be connected primarily by a path wiring formed within the module substrate 80 along the vertical direction of the module substrate 80. Therefore, the wiring connecting the hybrid filter 21 and the low-noise amplifier 53 can be shortened, reducing transmission loss of the received signal in the first communication band.

[0127] [3. Circuit element configuration structure of the high-frequency module 1B involved in the modified example]

[0128] Figure 3C This is a schematic cross-sectional view of the high-frequency module 1B according to the modified example. The high-frequency module 1B according to the modified example specifically shows the configuration structure of each circuit element constituting the high-frequency module 1 according to the embodiment.

[0129] Figure 3C The high-frequency module 1B shown here differs from the high-frequency module 1A in the embodiment in the configuration of the circuit elements constituting the hybrid filter 11 and the filter 12. Hereinafter, regarding the high-frequency module 1B of this modified example, descriptions of structures identical to those of the high-frequency module 1A in the embodiment will be omitted, and the description will focus on the different structures.

[0130] The hybrid filter 11 includes an elastic wave resonator A1 (elastic wave resonators P1 and P2), a capacitor C3, and inductors L1, L2 and L3.

[0131] The filter 12 includes an elastic wave resonator A3 and inductors L7 and L8.

[0132] Here, in the hybrid filter 11, the elastic wave resonator A1 and capacitor C3 are disposed on the main surface 80a, and the inductor L3 is formed inside the module substrate 80. The inductor L3 is, for example, composed of a plurality of planar coil conductors and through conductors connecting them.

[0133] Additionally, in filter 12, elastic wave resonator A3 and inductor L7 are disposed on main surface 80a, and inductor L8 is formed inside module substrate 80. Inductor L8 is, for example, composed of multiple planar coil conductors and through conductors connecting them.

[0134] According to the above structure, a portion of the circuit elements constituting the hybrid filter 11 are disposed on the main surface 80a, while other circuit elements are formed inside the module substrate 80, thereby enabling the high-frequency module 1B to be miniaturized.

[0135] Furthermore, the circuit elements formed inside the module substrate 80 can also be either elastic wave resonators or capacitors.

[0136] [4. Effects, etc.]

[0137] As described above, the high-frequency module 1A involved in the embodiment includes: a module substrate 80 having main surfaces 80a and 80b facing each other; a hybrid filter 11 having a first elastic wave resonator, a first inductor, and a first capacitor, the passband of the hybrid filter 11 including n77 of 5G-NR; a filter 12 having a second elastic wave resonator and a second inductor, the passband of the filter 12 including n79 of 5G-NR; power amplifiers 61 and 62; a third inductor connected between the power amplifier 61 and the hybrid filter 11; and a fourth inductor connected between the power amplifier 62 and the filter 12, wherein the passband width of the hybrid filter 11 is greater than the resonant bandwidth of the first elastic wave resonator, and when viewed from above the module substrate 80, (1) is defined as being to the left and above a reference point R1 on the module substrate 80. In the case that (2) the first quadrant Q2 of the side region is the second quadrant Q3 of the region to the left and lower side relative to the reference point R1, (3) the third quadrant Q4 of the region to the right and lower side relative to the reference point R1, and (4) the fourth quadrant Q1 of the region to the right and upper side relative to the reference point R1, at least a portion of the power amplifier 61 and at least a portion of the power amplifier 62 are disposed in the first quadrant Q2, at least a portion of the third inductor and at least a portion of the fourth inductor are disposed in the second quadrant Q3, at least a portion of the hybrid filter 11 and at least a portion of the filter 12 are disposed in the third quadrant Q4, the power amplifier 61 is disposed closer to the reference point R1 than the power amplifier 62, the third inductor is disposed closer to the reference point R1 than the fourth inductor, and the hybrid filter 11 is disposed closer to the reference point R1 than the filter 12.

[0138] Accordingly, the power amplifier 61, the third inductor, and the hybrid filter 11, configured in the first transmission path, are respectively positioned in the first quadrant Q2, the second quadrant Q3, and the third quadrant Q4. Therefore, the first transmission path can be formed as a short counter-clockwise path centered on the reference point R1 when viewed from above the module substrate 80 in the positive z-axis direction. Similarly, the power amplifier 62, the fourth inductor, and the filter 12, configured in the second transmission path, are respectively positioned in the first quadrant Q2, the second quadrant Q3, and the third quadrant Q4. Therefore, the second transmission path can also be formed as a short counter-clockwise path centered on the reference point R1 when viewed from above the module substrate 80 in the positive z-axis direction. This allows for the shortening of both the first and second transmission paths for transmitting high-output signals, thus enabling the realization of a high-frequency module 1A that supports multiple frequency bands and features low-loss signal transmission characteristics. Furthermore, it reduces the power consumption of the high-frequency module 1A.

[0139] Furthermore, power amplifier 61 is positioned closer to the reference point R1 than power amplifier 62, the third inductor is positioned closer to the reference point R1 than the fourth inductor, and the hybrid filter 11 is positioned closer to the reference point R1 than filter 12. Therefore, the first transmission path can be made shorter than the second transmission path. This allows for the transmission of signals in the first communication frequency band (n77 of 5G-NR), which has a wide range of usage areas and high usage frequency, with lower loss. Thus, the high-frequency module 1A supporting multiple frequency bands can be efficiently reduced in loss.

[0140] Additionally, the high-frequency module 1A involved in the embodiment may also include: low-noise amplifiers 51 and 52 disposed on the main surface 80b; a switch 31 connected to the hybrid filter 11, the low-noise amplifier 51 and the third inductor, for switching the connection between the hybrid filter 11 and the low-noise amplifier 51 and the connection between the hybrid filter 11 and the third inductor; and a switch 32 connected to the filter 12, the low-noise amplifier 52 and the fourth inductor, for switching the connection between the filter 12 and the low-noise amplifier 52 and the connection between the filter 12 and the fourth inductor, wherein one of the first elastic wave resonator, the first inductor and the first capacitor is disposed on the main surface 80a.

[0141] Accordingly, some circuit elements of the hybrid filter 11 and the low-noise amplifiers 51 and 52 are distributed on both sides of the module substrate 80 across the module substrate 80, thereby enabling the miniaturization of the high-frequency module 1A.

[0142] Alternatively, in the high-frequency module 1A of the embodiment and the high-frequency module 1B of the variant, the first elastic wave resonator may be disposed on either the main surface 80a or the module substrate 80, the first inductor may be disposed on either the main surface 80a or the module substrate 80, the first capacitor may be disposed on either the main surface 80a or the module substrate 80, the second elastic wave resonator may be disposed on either the main surface 80a or the module substrate 80, and the second inductor may be disposed on either the main surface 80a or the module substrate 80.

[0143] Accordingly, a portion of the circuit elements constituting the hybrid filter 11 and the filter 12 are disposed inside the main surface 80a or the module substrate 80, thereby enabling the miniaturization of the high-frequency modules 1A and 1B.

[0144] In addition, the high-frequency module 1A involved in the embodiment may also include an external connection terminal 100 configured on the main surface 80b, power amplifiers 61 and 62 configured on the main surface 80a, and a third inductor and a fourth inductor configured on the main surface 80a.

[0145] Accordingly, power amplifiers 61 and 62, which are difficult to reduce in height, as well as the third and fourth inductors, are arranged on the main surface 80a. Therefore, circuit components that are difficult to reduce in height are not arranged on the main surface 80b, thus making it easy to reduce the height of the main surface 80b side of the high-frequency module 1A.

[0146] In addition, the high-frequency module 1A involved in the embodiment may also include a switch 30, which is connected to the hybrid filter 11 and the filter 12 to switch the connection and non-connection of the hybrid filter 11 to the antenna connection terminals 110 and 120, and to switch the connection and non-connection of the filter 12 to the antenna connection terminals 110 and 120. When viewed from above the module substrate 80, the hybrid filter 11 and the switch 30 overlap by at least a portion.

[0147] Accordingly, the hybrid filter 11 and the switch 30, through which both the transmitted and received signals pass, can be connected primarily by a path wiring formed within the module substrate 80 along the vertical direction of the module substrate 80. Therefore, the wiring connecting the hybrid filter 11 and the switch 30 can be shortened, reducing transmission losses of the transmitted and received signals in the first communication frequency band.

[0148] Alternatively, in the high-frequency module 1A involved in the embodiment, the low-noise amplifiers 51 and 52 and the switch 30 may also be included in the semiconductor IC 71 disposed on the main surface 80b.

[0149] Accordingly, the low-noise amplifiers 51 and 52, as well as the switch 30, can be miniaturized and their height reduced. Furthermore, by configuring the semiconductor IC 71 on the main surface 80b, the height of the high-frequency module 1A can be reduced.

[0150] Additionally, the high-frequency module 1A involved in the embodiment may also include: a hybrid filter 21 having a third elastic wave resonator, a fifth inductor, and a second capacitor, the passband of the hybrid filter 21 including n77 of 5G-NR; and a filter 22 having a fourth elastic wave resonator and a sixth inductor, the passband of the filter 22 including n79 of 5G-NR, the hybrid filter 21 and the filter 22 being dedicated receiver filters connected to the switch 30, at least a portion of the hybrid filter 21 and at least a portion of the filter 22 being configured in the fourth quadrant Q1.

[0151] Accordingly, the circuit components constituting the high-frequency module 1A can be installed in a balanced and high-density manner.

[0152] In addition, the high-frequency module 1A involved in the embodiment may also include a low-noise amplifier 53 connected to the hybrid filter 21. When viewed from above the module substrate 80, the hybrid filter 21 and the low-noise amplifier 53 overlap at least partially.

[0153] Accordingly, the hybrid filter 21 and the low-noise amplifier 53 can be connected primarily by a path wiring formed within the module substrate 80 along the vertical direction of the module substrate 80. Therefore, the wiring connecting the hybrid filter 21 and the low-noise amplifier 53 can be shortened, reducing transmission loss of the received signal in the first communication band.

[0154] In addition, the communication device 5 includes: an RFIC 3, which processes the high-frequency signals received by antennas 2A and 2B; and a high-frequency module 1, which transmits high-frequency signals between antennas 2A and 2B and the RFIC 3.

[0155] Therefore, a multi-band communication device 5 can be provided, which includes a hybrid filter 11 and has low-loss signal transmission characteristics.

[0156] (Other implementation methods)

[0157] The above description illustrates the high-frequency module and communication device of the present invention through examples of embodiments, examples, and modifications. However, the present invention is not limited to the above-described embodiments, examples, and modifications. Other embodiments implemented by combining any structural elements from the above-described embodiments, examples, and modifications; modifications obtained by implementing the above-described embodiments through various modifications conceived by those skilled in the art without departing from the spirit of the present invention; and various devices incorporating the high-frequency module and communication device of the present invention are also included in the present invention.

[0158] For example, in the high-frequency modules and communication devices described in the embodiments, examples, and variations, matching elements such as inductors and capacitors, as well as switching circuits, may be connected between the various structural elements. Furthermore, the inductor may also include a wiring inductor formed by wiring connecting the various structural elements.

[0159] Industrial availability

[0160] This invention, as a high-frequency module and communication device applicable to multi-band systems, can be widely used in communication devices such as portable telephones.

[0161] Explanation of reference numerals in the attached figures

[0162] 1, 1A, 1B: High-frequency module; 2A, 2B: Antenna; 3: RF signal processing circuit (RFIC); 4: Baseband signal processing circuit (BBIC); 5: Communication device; 10, 20: High-frequency circuit; 11, 21: Hybrid filter; 12, 22: Filter; 30, 31, 32: Switch; 30a, 30b: Common terminal; 30c, 30d, 30e, 30f: Selection terminal; 41, 42, 43, 44, 45, 46: Matching circuit; 51, 52, 53, 54: Low-noise amplifier; 61, 62: Power amplifier; 71, 72: Semiconductor IC; 80: Module substrate; 80a, 80b: Main surface; 81, 82: Resin component; 85: Metal shielding layer; 100: External connection terminal; 101, 102, 103, 104: Input / output terminals; 110, 120: Antenna connection terminals; 130, 150, 170, 180: Receive output terminals; 140, 160: Transmit input terminals; A1, A2, A3: Elastic wave resonators; C3, C4: Capacitors; d1, d2, d3, d4, d5, d6: Distance; L1, L2, L3, L4, L5, L6, L7, L8: Inductors; P1, P2, P5, P6: Elastic wave resonators; Q1: Fourth quadrant; Q2: First quadrant; Q3: Second quadrant; Q4: Third quadrant; R1: Reference point.

Claims

1. A high-frequency module, comprising: A substrate having a first main surface and a second main surface facing each other; The first hybrid filter has a first elastic wave resonator, a first inductor and a first capacitor, and the passband of the first hybrid filter includes n77 of 5G New Radio, i.e. 5G-NR. A first filter having a second elastic wave resonator and a second inductor, the passband of the first filter including n79 of 5G-NR; First power amplifier and second power amplifier; A third inductor is connected between the first power amplifier and the first hybrid filter; and A fourth inductor is connected between the second power amplifier and the first filter. in, The passband width of the first hybrid filter is greater than the resonant bandwidth of the first elastic wave resonator. When viewed from above, given that (1) is defined as a first quadrant, which is a region to the left and above a reference point on the substrate; (2) is defined as a second quadrant, which is a region to the left and below the reference point; (3) is defined as a third quadrant, which is a region to the right and below the reference point; and (4) is defined as a fourth quadrant, which is a region to the right and above the reference point, At least a portion of the first power amplifier and at least a portion of the second power amplifier are configured in the first quadrant. At least a portion of the third inductor and at least a portion of the fourth inductor are disposed in the second quadrant. At least a portion of the first hybrid filter and at least a portion of the first filter are configured in the third quadrant. The first power amplifier is positioned closer to the reference point than the second power amplifier. The third inductor is positioned closer to the reference point than the fourth inductor. The first hybrid filter is configured closer to the reference point than the first filter.

2. The high-frequency module according to claim 1 further comprises: A first low-noise amplifier and a second low-noise amplifier disposed on the second main surface; A first switch, connected to the first hybrid filter, the first low-noise amplifier, and the third inductor, switches the connection between the first hybrid filter and the first low-noise amplifier, and the connection between the first hybrid filter and the third inductor; and A second switch, connected to the first filter, the second low-noise amplifier, and the fourth inductor, switches the connection between the first filter and the second low-noise amplifier, and between the first filter and the fourth inductor. One of the first elastic wave resonator, the first inductor, and the first capacitor is disposed on the first main surface.

3. The high-frequency module according to claim 2, wherein, The first elastic wave resonator is disposed on either the first main surface or the interior of the substrate; the first inductor is disposed on either the first main surface or the interior of the substrate; and the first capacitor is disposed on either the first main surface or the interior of the substrate. The second elastic wave resonator is disposed on either the first main surface or the interior of the substrate, and the second inductor is disposed on either the first main surface or the interior of the substrate.

4. The high-frequency module according to claim 2 or 3, wherein, It also features external connection terminals configured on the second main surface. The first power amplifier and the second power amplifier are disposed on the first main surface. The third inductor and the fourth inductor are disposed on the first main surface.

5. The high-frequency module according to any one of claims 2 to 4, wherein, It also includes a third switch, which is connected to the first hybrid filter and the first filter to switch between the connection and disconnection of the first hybrid filter and the antenna connection terminal, and to switch between the connection and disconnection of the first filter and the antenna connection terminal. When viewed from above the substrate, the first hybrid filter and the third switch overlap at least partially.

6. The high-frequency module according to claim 5, wherein, The first low-noise amplifier, the second low-noise amplifier, and the third switch are included in a semiconductor integrated circuit disposed on the second main surface.

7. The high-frequency module according to claim 5 or 6 further comprises: A second hybrid filter, comprising a third elastic wave resonator, a fifth inductor, and a second capacitor, wherein the passband of the second hybrid filter includes n77 of 5G-NR; and The second filter has a fourth elastic wave resonator and a sixth inductor, and the passband of the second filter includes n79 of 5G-NR. The second hybrid filter and the second filter are respectively dedicated receiver filters connected to the third switch. At least a portion of the second hybrid filter and at least a portion of the second filter are configured in the fourth quadrant.

8. The high-frequency module according to claim 7, wherein, It also features a third low-noise amplifier connected to the second hybrid filter. When viewed from above the substrate, the second hybrid filter and the third low-noise amplifier overlap at least partially.

9. A communication device comprising: Radio frequency (RF) signal processing circuits process high-frequency signals received via an antenna; and The high-frequency module according to any one of claims 1 to 8 propagates the high-frequency signal between the antenna and the RF signal processing circuit.

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