Method of growing high quality single crystal silicon carbide

Abstract

A method of growing an epitaxial layer on a substrate (20) of single crystalline silicon carbide, SiC, is disclosed. The method comprises: (S100) providing a source material (10) of single crystal poly SiC having a columnar microcrystalline grain structure and a substrate (20) of single crystalline SiC in a chamber (5) of a crucible, wherein a certain distance is present between the source material and the substrate; (S102) arranging a carbon getter (1) in the chamber (5) of the crucible close to the source material (10) and the substrate (20), the carbon getter (1) having a melting point above 2200°C and the ability to form a carbide layer with carbon species evaporated from SiC; (S106) reducing the pressure in the chamber (5); (S108) injecting an inert gas into the chamber (5); (S110) increasing the temperature in the chamber (5) to a growth temperature, such that a growth rate of 1 pm / h to 1 mm / h is achieved; and (S112) maintaining the growth temperature until a growth of at least 5 pm on the substrate (20) is completed.

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