高电子迁移率晶体管及其制作方法
By adjusting the nitrogen-to-titanium ratio and crystal plane ratio of the titanium nitride layer, the problem of insufficient etching and oxidation resistance of the titanium nitride layer in existing high electron mobility transistors was solved, thereby reducing material loss and improving transistor performance.
CN117198877BActive Publication Date: 2026-07-17UNITED MICROELECTRONICS CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNITED MICROELECTRONICS CORP
- Filing Date
- 2022-05-30
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the fabrication of existing high electron mobility transistors, the titanium nitride layer has insufficient resistance to etching and oxidation, resulting in significant material loss and affecting device performance.
Method used
By adjusting the nitrogen-to-titanium ratio and the ratio of the (200) crystal plane to the (111) crystal plane in the titanium nitride layer to a certain range, the strength of the titanium nitride layer is improved and the protection of the underlying P-type semiconductor layer is enhanced.
Benefits of technology
This significantly improves the etching and oxidation resistance of the titanium nitride layer, reduces material loss, and enhances the overall performance of the transistor.
✦ Generated by Eureka AI based on patent content.
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Figure CN117198877B_ABST
Abstract
本发明公开一种高电子迁移率晶体管及其制作方法，其中该制作高电子迁移率晶体管的方法主要包括先形成一缓冲层于基底上，然后形成一阻障层于缓冲层上，形成一P型半导体层于阻障层上，形成一氮化钛层于P型半导体层上且氮化钛层的氮对钛比例大于1，形成一保护层于氮化钛层以及阻障层上，去除该保护层以形成一开口，形成一栅极电极于开口内，再形成一源极电极以及一漏极电极于栅极电极两侧。
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