A method for manufacturing a vertical cavity surface emitting laser

Abstract

The present disclosure provides a preparation method of a vertical cavity surface emitting laser, comprising: preparing an electro-optical conversion part, wherein the back surface of the electro-optical conversion part is a first distributed Bragg reflector; preparing a first groove on the back surface of the first distributed Bragg reflector; preparing a first metal electrode on the back surface of the first distributed Bragg reflector, and making the front surface of the first metal electrode protrude to fill the first groove; and preparing a first substrate on the back surface of the first metal electrode. In the preparation method of the vertical cavity surface emitting laser, the current distribution of the vertical cavity surface emitting laser is changed, the series resistance of the vertical cavity surface emitting laser is reduced, and the optical path and the electrical path of the vertical cavity surface emitting laser are separated, forming a high-thermal-conductivity and low-resistance conduction path, so that the electrical performance and the optical performance are significantly improved.

Description

Technical Field

[0001] This disclosure relates to the field of vertical cavity surface-emitting laser (VCSEL) technology, and more particularly to a method for fabricating a VCSEL. Background Technology

[0002] For vertical-cavity surface-emitting lasers (VCSELs), improving photoelectric conversion efficiency can effectively reduce the junction temperature and operating current of the device, and effectively improve the reliability and stability of the device.

[0003] Currently, gallium arsenide (GaAs) based VCSELs typically use GaAs substrates of 100µm with thermal conductivity of 50W / mK-80W / mK. Furthermore, the N-type distributed Bragg reflector (DBR) below the active region provides some obstruction to heat conduction. Therefore, under continuous operating conditions, the junction temperature of a VCSEL is much higher than that of a side-emitting laser, resulting in the low photoelectric conversion efficiency of VCSELs.

[0004] Improving photoelectric conversion efficiency is one of the main challenges in VCSEL research, and it is also the technical problem that this disclosure aims to solve. Summary of the Invention

[0005] This disclosure aims to at least partially address one of the technical problems in the related art.

[0006] Therefore, the purpose of this disclosure is to provide a method for fabricating a vertical cavity surface-emitting laser.

[0007] To achieve the above objectives, this disclosure provides a method for fabricating a vertical-cavity surface-emitting laser, comprising: fabricating an electro-optic conversion section, wherein the back side of the electro-optic conversion section is a first distributed Bragg reflector; fabricating a first groove on the back side of the first distributed Bragg reflector; fabricating a first metal electrode on the back side of the first distributed Bragg reflector and filling the first groove with a protrusion on the front side of the first metal electrode; and fabricating a first substrate on the back side of the first metal electrode.

[0008] Optionally, the fabrication of the electro-optic conversion portion includes: sequentially fabricating a first distributed Bragg reflector, an active layer, an oxide layer, and a second distributed Bragg reflector on a second substrate, or sequentially fabricating a first distributed Bragg reflector, an oxide layer, an active layer, and a second distributed Bragg reflector on a second substrate, wherein the thermal conductivity of the first substrate is greater than that of the second substrate; defining a plurality of first unit structures on the front side of the second distributed Bragg reflector; fabricating a plurality of second grooves penetrating to the bottom of the first groove according to the plurality of first unit structures, so as to separate a plurality of the electro-optic conversion portions using the second grooves; and sequentially fabricating a passivation layer and a second metal electrode in the second groove.

[0009] Optionally, the fabrication of the electro-optic conversion portion includes: sequentially growing the first distributed Bragg reflector, the active layer, the oxide layer, and the second distributed Bragg reflector on the second substrate using organometallic chemical vapor deposition or molecular beam epitaxy; or sequentially growing the first distributed Bragg reflector, the oxide layer, the active layer, and the second distributed Bragg reflector on the second substrate using organometallic chemical vapor deposition or molecular beam epitaxy; defining a plurality of first unit structures on the front side of the second distributed Bragg reflector using a first photolithographic mask pattern; fabricating a plurality of second grooves penetrating to the bottom of the first grooves based on the plurality of first unit structures using an etching method, so as to separate a plurality of the electro-optic conversion portions using the second grooves; fabricating an electrode contact layer on the front side of the second distributed Bragg reflector using a dielectric film growth process, a second photolithographic mask pattern, a third photolithographic mask pattern, and a metal growth process; and sequentially fabricating the passivation layer and the second metal electrode in the second groove, and extending the second metal electrode out of the second groove and covering the periphery of the front side of the electrode contact layer.

[0010] Optionally, the step of fabricating the first groove on the back side of the first distributed Bragg reflector includes: fabricating a third substrate on the front side of the second metal electrode and the electrode contact layer; removing the second substrate to expose the first distributed Bragg reflector; defining a plurality of second unit structures corresponding to the first unit structure on the back side of the first distributed Bragg reflector; fabricating a plurality of the first grooves on the back side of the first distributed Bragg reflector according to the plurality of second unit structures; after fabricating the first substrate on the back side of the first metal electrode, the method for fabricating the vertical cavity surface-emitting laser further includes: removing the third substrate.

[0011] Optionally, the step of fabricating the first groove on the back side of the first distributed Bragg reflector includes: defining a plurality of second unit structures corresponding to the first unit structure on the back side of the first distributed Bragg reflector using a fourth photolithographic mask pattern; and fabricating the first groove within the second unit structure using a fifth photolithographic mask pattern and an etching method.

[0012] Optionally, the fabrication of the electro-optic conversion section includes: sequentially fabricating an etch stop layer and the first distributed Bragg reflector on the second substrate using a metal-organic chemical vapor deposition method or a molecular beam epitaxy method; the removal of the second substrate includes: spin-coating a protective layer on the side of the electro-optic conversion section; and removing the second substrate and the etch stop layer by wet etching or dry etching.

[0013] Optionally, the step of preparing a third substrate on the front side of the second metal electrode and the electrode contact layer includes: spin-coating a transition adhesive on the front side of the second metal electrode and the electrode contact layer; using the transition adhesive to bond the third substrate to the front side of the second metal electrode and the electrode contact layer; and removing the third substrate includes: removing the transition adhesive using acetone or ultraviolet laser to remove the third substrate.

[0014] Optionally, before sequentially fabricating the passivation layer and the second metal electrode in the second groove, the fabrication of the electro-optic conversion portion further includes: using the second groove to fabricate a photoelectric confinement layer around the oxide layer, and forming a current-limiting hole in the middle of the oxide layer, wherein the projection of the current-limiting hole along the thickness direction of the electro-optic conversion portion does not overlap with the projection of the first groove along the thickness direction of the electro-optic conversion portion.

[0015] Optionally, the preparation of the electro-optic conversion part further includes: preparing the photoelectric confinement layer using a wet oxidation method or a proton implantation method, and forming a flow-limiting hole with a circular, rhomboid, or elliptical shape in the middle of the oxide layer.

[0016] Optionally, the step of fabricating a first substrate on the back side of the first metal electrode includes: fabricating a first substrate; soldering the first substrate to the back side of the first metal electrode; forming the vertical cavity surface-emitting laser using a dicing process, wherein the vertical cavity surface-emitting laser includes: an electro-optic conversion unit, or a plurality of electro-optic conversion units connected in an array, wherein the electro-optic conversion unit includes: the electro-optic conversion portion.

[0017] The technical solution provided in this disclosure may include the following beneficial effects:

[0018] By filling the first groove with the front protrusion of the first metal electrode, the current distribution of the vertical cavity surface emitter (VCSEL) is changed, the series resistance of the VCSEL is reduced, and the optical path and electrical path of the VCSEL are separated, forming a high thermal conductivity and low resistance conduction path, which significantly improves the electrical and optical performance.

[0019] Additional aspects and advantages of this disclosure will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this disclosure. Attached Figure Description

[0020] The above and / or additional aspects and advantages of this disclosure will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, in which:

[0021] Figure 1 This is a schematic diagram of the structure of a vertical cavity surface-emitting laser proposed in the relevant embodiments;

[0022] Figure 2 This is a schematic flowchart of a method for fabricating a vertical-cavity surface-emitting laser according to an embodiment of this disclosure;

[0023] Figure 3 This is a schematic diagram of the fabrication process of a vertical cavity surface-emitting laser according to an embodiment of this disclosure;

[0024] Figure 4 This is a schematic diagram of the fabrication process of a vertical cavity surface-emitting laser according to an embodiment of this disclosure;

[0025] Figure 5 This is a schematic diagram of the fabrication process of a vertical cavity surface-emitting laser according to an embodiment of this disclosure;

[0026] Figure 6 This is a schematic diagram of the photoelectric conduction structure proposed in one embodiment of the present disclosure;

[0027] Figure 7 This is a schematic diagram of the photoelectric conduction structure proposed in one embodiment of the present disclosure;

[0028] Figure 8 This is a schematic diagram of the photoelectric conduction structure proposed in one embodiment of the present disclosure;

[0029] As shown in the figure: S1, metal electrode; S2, distributed Bragg reflector; S3, substrate.

[0030] 1. Electro-optical conversion unit;

[0031] 11. Second metal electrode; 1101. Light emission port;

[0032] 12. Electrode contact layer; 13. Second distributed Bragg reflector; 14. Oxide layer;

[0033] 15. Photoelectric confinement layer; 1501. Flow limiting hole;

[0034] 16. Active layer;

[0035] 17. First distributed Bragg reflector; 1701. First groove; 1702. First reflective layer; 1703. Second reflective layer;

[0036] 18. First metal electrode; 1801. Protrusion; 1802. First metal layer; 1803. Second metal layer;

[0037] 19. Welding layer; 110. First substrate; 111. Second groove; 112. Passivation layer; 113. Heat dissipation conductor; 114. Second substrate; 115. Third substrate; 116. Transition adhesive; 117. Corrosion stop layer. Detailed Implementation

[0038] Embodiments of this disclosure are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are used only to explain this disclosure, and should not be construed as limiting this disclosure. Rather, embodiments of this disclosure include all variations, modifications, and equivalents falling within the spirit and scope of the appended claims.

[0039] like Figure 1 As shown, in the relevant embodiments, the fabrication method of the vertical-cavity surface-emitting laser (VCSEL) includes:

[0040] An electro-optic conversion section was fabricated, wherein the back side of the electro-optic conversion section is a distributed Bragg reflector (DBR) S2.

[0041] A metal electrode S1 is fabricated on the back side of the distributed Bragg reflector S2;

[0042] A substrate S3 is prepared on the back side of the metal electrode S1.

[0043] The distributed Bragg reflector S2 is used to reflect light so that photons can be amplified by reflection to form a laser. The metal electrode S1 is used to provide an electrical circuit. Both light and electricity conduction need to pass through the distributed Bragg reflector S2, resulting in a high degree of overlap between the light and electricity conduction paths within the distributed Bragg reflector S2. The heat generated by light and electricity conduction tends to accumulate within the distributed Bragg reflector S2 simultaneously, affecting the conversion efficiency of the vertical cavity surface-emitting laser. At the same time, the distributed Bragg reflector S2 has a high resistance and low thermal conductivity, which makes the impact on the conversion efficiency of the vertical cavity surface-emitting laser even more severe.

[0044] It should be further explained that for vertical cavity surface-emitting lasers, improving the photoelectric conversion efficiency can effectively reduce the junction temperature and operating current of the device, and can effectively improve the reliability and stability of the device.

[0045] To solve the above technical problems, such as Figure 2 and Figure 3 As shown in the embodiments of this disclosure, a method for fabricating a vertical-cavity surface-emitting laser is proposed, comprising:

[0046] An electro-optic conversion section was fabricated, wherein the back side of the electro-optic conversion section is a first distributed Bragg reflector 17;

[0047] A first groove 1701 is formed on the back side of the first distributed Bragg reflector 17;

[0048] A first metal electrode 18 is prepared on the back side of the first distributed Bragg reflector 17, and the front protrusion 1801 of the first metal electrode 18 fills the first groove 1701.

[0049] A first substrate 110 is prepared on the back side of the first metal electrode 18.

[0050] It is understandable that the electro-optic conversion section and the first distributed Bragg reflector 17 therein are used for light conversion and conduction as well as electricity conduction, and the first metal electrode 18 is used for electricity conduction. When electricity passes through the electro-optic conversion section, it is converted into light. Photons use the high reflectivity of the first distributed Bragg reflector 17 to achieve resonance amplification, ensuring the formation of laser. When electricity passes through the electro-optic conversion section and the first metal electrode 18, it can ensure the formation of an electrical circuit, thereby ensuring that the vertical cavity surface-emitting laser can perform electro-optic conversion.

[0051] Specifically, by filling the first groove 1701 with the front protrusion 1801 of the first metal electrode 18, the metal in the first distributed Bragg reflector 17 is embedded, and the embedded metal replaces part of the first distributed Bragg reflector 17. As a result, the electrical conduction part in the first metal electrode 18 replaces part of the photoelectric conduction part in the first distributed Bragg reflector 17. Since the resistance of the first metal electrode 18 is less than the resistance of the first distributed Bragg reflector 17, more current passing through the first distributed Bragg reflector 17 is transferred to the protrusion 1801 with lower resistance. This achieves the separation of the optical conduction path and the electrical conduction path within the first distributed Bragg reflector 17, thereby avoiding the simultaneous accumulation of heat generated by optical and electrical conduction within the distributed Bragg reflector, and thus effectively improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0052] Furthermore, since the resistance of the first metal electrode 18 is less than that of the first distributed Bragg reflector 17, the overall resistance of the first distributed Bragg reflector 17 is reduced, resulting in higher electrical conduction efficiency and less heat generation, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser. At the same time, since the thermal conduction efficiency of the first metal electrode 18 is greater than that of the first distributed Bragg reflector 17, the heat dissipation efficiency of the first distributed Bragg reflector 17 is improved, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0053] Therefore, by filling the first groove 1701 with the front protrusion 1801 of the first metal electrode 18, the current distribution of the vertical cavity surface emitter (VCSEL) is changed, the series resistance of the VCSEL is reduced, and the optical path and electrical path of the VCSEL are separated, forming a high thermal conductivity and low resistance conduction path, which significantly improves the electrical and optical performance.

[0054] It should be noted that the electro-optic conversion section is used for electro-optic conversion and electro-optic conduction. The specific type of the electro-optic conversion section can be set according to actual needs and is not limited thereto. For example, the electro-optic conversion unit 1 includes a first substrate 110, a first metal electrode 18, a first distributed Bragg reflector 17, an active layer 16, an oxide layer 14, a second distributed Bragg reflector 13, an electrode contact layer 12, a second metal electrode 11, etc. The electro-optic conversion section can be a part of the electro-optic conversion unit 1. For example, the electro-optic conversion section includes the first distributed Bragg reflector 17, the active layer 16, the oxide layer 14, the second distributed Bragg reflector 13, etc.

[0055] The first distributed Bragg reflector 17 is a distributed Bragg reflector, which includes multiple thin films with different refractive indices. These thin films are stacked together periodically. Since light is reflected at the interface when passing through different media, the magnitude of the reflectivity is related to the magnitude of the refractive indices between the media. Therefore, when light passes through the multiple thin films in the distributed Bragg reflector, the light reflected back from each layer undergoes constructive interference due to the change in phase angle and combines with each other, thereby obtaining extremely intense reflected light.

[0056] The first metal electrode 18 is used to conduct current and form the electrical circuit of the vertical cavity surface emitter laser. The first metal electrode 18 is a metal electrode made of metal material. The specific type of the first metal electrode 18 can be set according to actual needs and is not limited thereto.

[0057] The fabrication of the first metal electrode 18 on the back side of the first distributed Bragg reflector 17 can be achieved using metal growth processes, including sputtering, evaporation, electroplating, etc.

[0058] The first groove 1701 and the protrusion 1801 are adapted to each other. The groove depth of the first groove 1701 is in the thickness direction of the photoelectric conduction structure. The size of the first groove 1701 can be set according to actual needs and is not limited thereto. However, the size of the first groove 1701 should not be too large to avoid affecting the light conduction and reflection function of the first distributed Bragg reflector 17. At the same time, the size of the first groove 1701 should not be too small to avoid excessive current in the first distributed Bragg reflector 17 still being conducted in the first distributed Bragg reflector 17.

[0059] The method for fabricating the electro-optic conversion part can be set according to actual needs, and there are no restrictions on it.

[0060] like Figure 4 As shown, in some embodiments, the electro-optic conversion section includes:

[0061] A first distributed Bragg reflector 17, an active layer 16, an oxide layer 14, and a second distributed Bragg reflector 13 are sequentially fabricated on a second substrate 114, or a first distributed Bragg reflector 17, an oxide layer 14, an active layer 16, and a second distributed Bragg reflector 13 are sequentially fabricated on a second substrate 114, wherein the thermal conductivity of the first substrate 110 is greater than that of the second substrate 114.

[0062] Multiple first unit structures are defined on the front side of the second distributed Bragg reflector 13;

[0063] Multiple second grooves 111 are fabricated based on multiple first unit structures, extending to the bottom of the first groove 1701, so as to separate multiple electro-optic conversion parts using the second grooves 111;

[0064] A passivation layer 112 and a second metal electrode 11 are sequentially formed in the second groove 111.

[0065] It is understandable that by fabricating the layers on the second substrate 114, a stacked structure of a first distributed Bragg reflector 17, an active layer 16, an oxide layer 14, a second distributed Bragg reflector 13, a passivation layer 112, and a second metal electrode 11 is formed on the second substrate 114. This results in a stable electrical circuit being formed within the vertical cavity surface emitter laser. When electricity passes through the active layer 16, the photons emitted by the active layer 16 are continuously reflected and resonated and amplified within the resonant cavity formed between the first distributed Bragg reflector 17 and the second distributed Bragg reflector 13, thereby forming a laser.

[0066] The definition of multiple first unit structures facilitates the fabrication of multiple second grooves 111, which in turn facilitate the fabrication of multiple passivation layers 112 and second metal electrodes 11, thereby ensuring the stable realization of multiple electro-optic conversion sections.

[0067] Since the second groove 111 extends to the bottom of the first groove 1701, and the passivation layer 112 is fabricated within the second groove 111, one side of the passivation layer 112 can cover the edges of the second distributed Bragg reflector 13, the active layer 16, the oxide layer 14, and other layer structures, preventing leakage and short circuits in each layer and ensuring stable switching of the vertical cavity surface-emitting laser. Simultaneously, since the second metal electrode 11 is also fabricated within the second groove 111, the portion of the second metal electrode 11 within the second groove 111 forms a heat dissipation conductor 113, and the other side of the passivation layer 112 covers the heat dissipation conductor 113, not only ensuring... The heat dissipation conductor 113 can provide insulation and isolation between the second distributed Bragg reflector 13, the active layer 16, the oxide layer 14, and other layer structures, avoiding leakage and short circuit problems between the heat dissipation conductor 113, the second distributed Bragg reflector 13, the active layer 16, the oxide layer 14, and other layer structures, ensuring the stable conversion of the vertical cavity surface-emitting laser. Moreover, it enables the second distributed Bragg reflector 13, the active layer 16, the oxide layer 14, and other layer structures to dissipate heat using the heat dissipation conductor 113, thereby further improving the heat dissipation efficiency of the vertical cavity surface-emitting laser, and thus improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0068] Since the thermal conductivity of the first substrate 110 is greater than that of the second substrate 114, the first substrate 110 forms a high thermal conductivity substrate. This allows the lower thermal resistance of the first substrate 110 to effectively improve the photoelectric conversion efficiency and total output optical power of the vertical cavity surface-emitting laser.

[0069] It should be noted that the second groove 111 is a groove structure etched along the direction from the front of the second distributed Bragg reflector 13 to the bottom of the first groove 1701. The specific type of the second groove 111 can be set according to actual needs and there are no restrictions on it.

[0070] The specific type of the first distributed Bragg reflector 17 can be set according to actual needs and is not limited thereto. For example, the first distributed Bragg reflector 17 can be grown alternately from two materials on the second substrate 114, and the two materials need to match the material of the second substrate 114. For example, the second substrate 114 can be gallium arsenide or indium phosphide (InP) material, and the two materials of the first distributed Bragg reflector 17 can be gallium arsenide material and aluminum gallium arsenide (AlGaAs) material.

[0071] Since the two materials of the first distributed Bragg reflector 17 need to be matched with the material of the substrate, the first distributed Bragg reflector 17 cannot be directly fabricated on the first substrate 110 with high thermal conductivity. Therefore, it is necessary to set up the second substrate 114.

[0072] The second distributed Bragg reflector 13 is also a distributed Bragg reflector. The specific type of the second distributed Bragg reflector 13 can be set according to actual needs and is not limited thereto. For example, the second distributed Bragg reflector 13 can also be grown alternately from gallium arsenide material and aluminum gallium arsenide material.

[0073] In the first distributed Bragg reflector 17 and the second distributed Bragg reflector 13, if one is of type P, then the other is of type N. For example, the first distributed Bragg reflector 17 is of type P and the second distributed Bragg reflector 13 is of type N, or the first distributed Bragg reflector 17 is of type N and the second distributed Bragg reflector 13 is of type P.

[0074] When current is injected into the active layer 16, the active layer 16 emits photons in a stimulated manner. The specific type of the active layer 16 can be set according to actual needs and is not limited thereto. The optical thickness of the active layer 16 should be an integer multiple of 1 / 2 the laser wavelength.

[0075] The second metal electrode 11 is used to conduct current and form the electrical circuit of the vertical-cavity surface-emitting laser. The second metal electrode 11 is also a metal electrode made of metal material. The specific type of the second metal electrode 11 can be set according to actual needs and is not limited thereto. In particular, the second metal electrode 11 can be thickened to further improve the photoelectric conduction efficiency of the vertical-cavity surface-emitting laser.

[0076] In this configuration, one of the first metal electrode 18 and the second metal electrode 11 is connected to the positive terminal of the power supply, and the other is connected to the negative terminal of the power supply. For example, the first metal electrode 18 is connected to the positive terminal of the power supply, and the second metal electrode 11 is connected to the negative terminal of the power supply; or, the first metal electrode 18 is connected to the negative terminal of the power supply, and the second metal electrode 11 is connected to the positive terminal of the power supply.

[0077] The passivation layer 112 is used for insulation and isolation. The specific type of the passivation layer 112 can be set according to actual needs and is not limited thereto.

[0078] The oxide layer 14 can be prepared between the active layer 16 and the first distributed Bragg reflector 17, or between the active layer 16 and the second distributed Bragg reflector 13, without limitation.

[0079] In some embodiments, fabricating the electro-optic conversion section includes:

[0080] A first distributed Bragg reflector 17, an active layer 16, an oxide layer 14, and a second distributed Bragg reflector 13 are sequentially grown on a second substrate 114 using either Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).

[0081] Multiple first unit structures are defined on the front side of the second distributed Bragg reflector 13 using a first photolithographic mask pattern;

[0082] Based on multiple first unit structures, multiple second grooves 111 penetrating to the bottom of the first groove 1701 are prepared using the etching method, so as to separate multiple electro-optic conversion parts using the second grooves 111;

[0083] Using dielectric film growth process, second photolithography mask pattern, third photolithography mask pattern and metal growth process, an electrode contact layer 12 is prepared on the front side of the second distributed Bragg reflector 13, and a passivation layer 112 and a second metal electrode 11 are sequentially prepared in the second groove 111, and the second metal electrode 11 extends out of the second groove 111 and covers the periphery of the front side of the electrode contact layer 12.

[0084] It is understood that the various layers are sequentially grown on the second substrate 114 using metal-organic chemical vapor deposition or molecular beam epitaxy, and multiple second grooves 111 are prepared using a first photolithographic mask pattern and etching method. Finally, an electrode contact layer 12 is prepared on the front side of the second distributed Bragg reflector 13 using dielectric film growth process, second photolithographic mask pattern, third photolithographic mask pattern and metal growth process, and a passivation layer 112 and a second metal electrode 11 are sequentially prepared in the second grooves 111, thereby forming a stacked structure of a vertical-cavity surface-emitting laser. This achieves efficient fabrication of the vertical-cavity surface-emitting laser and ensures stable conversion of the vertical-cavity surface-emitting laser.

[0085] It should be noted that the electrode contact layer 12 can conduct electricity and light. The specific type of the electrode contact layer 12 can be set according to actual needs and there are no restrictions on it.

[0086] The first, second, and third photolithographic mask patterns are all photolithographic mask patterns, where a photolithographic mask pattern is a specific geometric shape on the photolithographic mask.

[0087] like Figure 5 and Figure 6 As shown, in some embodiments, fabricating a first groove 1701 on the back side of the first distributed Bragg reflector 17 includes: fabricating a third substrate 115 on the front side of the second metal electrode 11 and the electrode contact layer 12; removing the second substrate 114 to expose the first distributed Bragg reflector 17; defining a plurality of second unit structures corresponding to the first unit structure on the back side of the first distributed Bragg reflector 17; and fabricating a plurality of first grooves 1701 on the back side of the first distributed Bragg reflector 17 according to the plurality of second unit structures.

[0088] After fabricating the first substrate 110 on the back side of the first metal electrode 18, the fabrication method of the vertical cavity surface-emitting laser further includes: removing the third substrate 115.

[0089] It is understandable that by preparing a third substrate 115 on the front side of the second metal electrode 11 and the electrode contact layer 12, the overall stacked structure can be effectively supported after the second substrate 114 is removed, which facilitates further processing on the back side of the first distributed Bragg reflector 17. By defining multiple second unit structures, it is easy to prepare multiple first grooves 1701, and then use multiple first grooves 1701 to prepare the protrusions 1801 of the first metal electrode 18, ensuring the efficient realization of the vertical cavity surface emission laser structure.

[0090] By removing the third substrate 115 after the first substrate 110 is fabricated, an overall structure of the vertical cavity surface-emitting laser is formed, ensuring the realization of the laser emission function of the vertical cavity surface-emitting laser.

[0091] It should be noted that the first unit structure corresponds to the second unit structure, wherein each electro-optic conversion unit 1 corresponds to one first unit structure and one second unit structure.

[0092] In some embodiments, forming a first groove 1701 on the back side of the first distributed Bragg reflector 17 includes:

[0093] On the back side of the first distributed Bragg reflector 17, multiple second unit structures corresponding to the first unit structure are fabricated using a fourth photolithographic mask pattern.

[0094] The first groove 1701 was fabricated within the second unit structure using a fifth photolithographic mask pattern and etching method.

[0095] It is understandable that the first groove 1701 is fabricated using the fourth photolithography mask pattern and etching method, and then the protrusion 1801 of the first metal electrode 18 is fabricated using the first groove 1701, so as to realize the efficient fabrication of the vertical cavity surface emission laser structure and ensure the stable conversion of the vertical cavity surface emission laser.

[0096] It should be noted that the fourth lithography mask pattern is also a lithography mask pattern.

[0097] like Figure 4 and Figure 5 As shown, in some embodiments, the preparation of the electro-optic conversion part includes: sequentially preparing an etch stop layer 117 and a first distributed Bragg reflector 17 on a second substrate 114 using a metal-organic chemical vapor deposition method or a molecular beam epitaxy method.

[0098] Removing the second substrate 114 includes: spin-coating a protective layer on the side of the electro-optic conversion section; and removing the second substrate 114 and the etch stop layer 117 by wet etching or dry etching.

[0099] It is understandable that by setting the etch stop layer 117, the first groove 1701 is prevented from damaging the first distributed Bragg reflector 17, the active layer 16, etc. during the processing. At the same time, by setting the protective layer, the edges of the first distributed Bragg reflector 17, the active layer 16, etc. are prevented from being damaged when removing the second substrate 114 and the etch stop layer 117. Thus, the efficient and stable fabrication of the vertical cavity surface emission laser is guaranteed.

[0100] It should be noted that the specific types of the corrosion stop layer 117 and the protective layer can be set according to actual needs and there are no restrictions on them. In particular, the protective layer can be removed after removing the second substrate 114 and the corrosion stop layer 117.

[0101] like Figure 5 As shown, in some embodiments, the preparation of a third substrate 115 on the front side of the second metal electrode 11 and the electrode contact layer 12 includes: spin-coating a transition adhesive 116 on the front side of the second metal electrode 11 and the electrode contact layer 12; and using the transition adhesive 116 to bond the third substrate 115 to the front side of the second metal electrode 11 and the electrode contact layer 12.

[0102] Removing the third substrate 115 includes removing the transition adhesive 116 using acetone or an ultraviolet laser to remove the third substrate 115.

[0103] It is understandable that by setting the transition adhesive 116, the third substrate 115 is bonded to the front side of the second metal electrode 11 and the electrode contact layer 12, thereby ensuring the stable support of the third substrate 115 for each layer structure, and thus ensuring the stable fabrication of the first metal electrode 18.

[0104] It should be noted that the specific type of transition adhesive 116 can be set according to actual needs and there is no limitation. For example, transition adhesive 116 can be organic polymer, photoresist, bonding adhesive, etc.

[0105] like Figure 4 As shown, in some embodiments, before the passivation layer 112 and the second metal electrode 11 are sequentially fabricated in the second groove 111, the electro-optic conversion section is further fabricated by:

[0106] A photoelectric confinement layer 15 is formed around the oxide layer 14 using the second groove 111, and a flow-limiting hole 1501 is formed in the middle of the oxide layer 14. The projection of the flow-limiting hole 1501 along the thickness direction of the electro-optic conversion portion does not overlap with the projection of the first groove 1701 along the thickness direction of the electro-optic conversion portion.

[0107] It is understandable that, since the photoelectric confinement layer 15 is fabricated around the oxide layer 14 and forms a flow-limiting hole 1501 in the middle of the oxide layer 14, the light and electricity passing through the oxide layer 14 can be confined to the flow-limiting hole 1501 located in the middle of the oxide layer 14, thereby preventing the light and electricity passing through the oxide layer 14 from diffusing and leaking to the periphery of the oxide layer 14, and thus effectively improving the conversion efficiency of the vertical cavity surface emission laser.

[0108] Since the projection of the flow-limiting aperture 1501 along the thickness direction of the electro-optic conversion portion does not overlap with the projection of the first groove 1701 along the thickness direction of the electro-optic conversion portion, the portion of the first distributed Bragg reflector 17 adjacent to the first groove 1701 can fully reflect the light passing through the flow-limiting aperture 1501, thereby avoiding light loss and improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0109] It should be noted that the oxide layer 14 and the photoelectric confinement layer 15 are used to form the flow-limiting hole 1501 to limit the light conduction path and the electrical conduction path. The specific types of the oxide layer 14 and the photoelectric confinement layer 15 can be set according to actual needs and are not limited thereto.

[0110] In some embodiments, fabricating the electro-optic conversion section further includes:

[0111] A photoelectric confinement layer 15 is prepared by wet oxidation or proton implantation, and a flow-limiting hole 1501 in the shape of a circle, rhombus or ellipse is formed in the middle of the oxide layer 14.

[0112] It is understandable that by using wet oxidation or proton implantation to prepare the photoelectric confinement layer 15 around the oxide layer 14, the efficient fabrication of the vertical cavity surface-emitting laser is achieved, ensuring the stable conversion of the vertical cavity surface-emitting laser.

[0113] By forming a flow-limiting aperture 1501 in the middle of the oxide layer 14 in the shape of a circle, rhombus or ellipse, it is possible to ensure the smooth passage of light and electricity while avoiding the loss of light, thereby improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0114] It should be noted that wet oxidation is a method of oxidizing suspended or dissolved organic matter in a liquid under high temperature and high pressure in the presence of liquid water.

[0115] like Figure 6 As shown, in some embodiments, fabricating a first substrate 110 on the back side of the first metal electrode 18 includes:

[0116] Fabrication of the first substrate 110;

[0117] The first substrate 110 is welded to the back side of the first metal electrode 18;

[0118] A vertical cavity surface-emitting laser is formed using a dicing process, and the vertical cavity surface-emitting laser includes: one electro-optic conversion unit 1, or multiple electro-optic conversion units 1 connected in an array in sequence, wherein the electro-optic conversion unit 1 includes: an electro-optic conversion section.

[0119] It is understood that by welding the first substrate 110 to the back of the first metal electrode 18, the first metal layer 1802 is stably connected to the first substrate 110. The first substrate 110 provides support for the second distributed Bragg reflector 13, the active layer 16, the first distributed Bragg reflector 17, the first metal electrode 18, etc., thereby ensuring the stable switching of the vertical cavity surface-emitting laser.

[0120] A vertical cavity surface-emitting laser (VCSEL) is formed by using a dicing process, comprising a single electro-optic conversion unit 1 or multiple electro-optic conversion units 1 connected in an array, to ensure that the VCSEL can stably emit laser light to meet the application requirements.

[0121] It should be noted that the first substrate 110 is used for support, and at the same time, the first substrate 110 can also be used for heat dissipation, so that the vertical cavity surface emission laser can improve the heat dissipation efficiency by utilizing the first substrate 110, thereby improving the overall conversion efficiency.

[0122] The specific type of the first substrate 110 can be set according to actual needs and is not limited thereto. For example, the material of the first substrate 110 can be silicon (Si), copper (Cu), copper tungsten (CuW), silicon carbide (SiC), aluminum nitride (AlN), diamond, diamond composite material, etc.

[0123] like Figure 7 As shown, based on the above-described preparation method, this disclosure also proposes a photoelectric conduction structure, including a first distributed Bragg reflector 17 and a first metal electrode 18. The first metal electrode 18 is disposed on one side of the first distributed Bragg reflector 17. A first groove 1701 is provided on the side of the first distributed Bragg reflector 17 near the first metal electrode 18, and a protrusion 1801 is provided on the side of the first metal electrode 18 near the first distributed Bragg reflector 17. The protrusion 1801 fills the first groove 1701.

[0124] Understandably, the first distributed Bragg reflector 17 is used for light conduction and electricity conduction, and the first metal electrode 18 is used for electricity conduction. When light passes through the first distributed Bragg reflector 17, the light is resonantly amplified by the high reflectivity of the first distributed Bragg reflector 17 to ensure the formation of laser. When electricity passes through the first distributed Bragg reflector 17 and the first metal electrode 18, it can ensure the formation of an electrical circuit, thereby ensuring that the vertical cavity surface-emitting laser can perform electro-optic conversion.

[0125] Specifically, by filling the first groove 1701 with the protrusion 1801 of the first metal electrode 18, the metal in the first distributed Bragg reflector 17 is embedded, and the embedded metal replaces part of the first distributed Bragg reflector 17. As a result, the electrical conduction part in the first metal electrode 18 replaces the photoelectric conduction part in the first distributed Bragg reflector 17. Since the resistance of the first metal electrode 18 is less than the resistance of the first distributed Bragg reflector 17, more current passing through the first distributed Bragg reflector 17 is transferred to the protrusion 1801 with lower resistance. This achieves the separation of the optical conduction path and the electrical conduction path within the first distributed Bragg reflector 17, thereby avoiding the simultaneous accumulation of heat generated by optical and electrical conduction within the distributed Bragg reflector, and thus effectively improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0126] Furthermore, since the resistance of the first metal electrode 18 is less than that of the first distributed Bragg reflector 17, the overall resistance of the first distributed Bragg reflector 17 is reduced, resulting in higher electrical conduction efficiency and less heat generation, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser. At the same time, since the thermal conduction efficiency of the first metal electrode 18 is greater than that of the first distributed Bragg reflector 17, the heat dissipation efficiency of the first distributed Bragg reflector 17 is improved, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0127] Thus, by filling the first groove 1701 with the protrusion 1801 of the first metal electrode 18, the current distribution of the vertical cavity surface emitter (VCSEL) is changed, the series resistance of the VCSEL is reduced, and the optical and electrical paths of the VCSEL are separated, forming a high thermal conductivity and low resistance conduction path, which significantly improves the electrical and optical performance.

[0128] like Figure 8 As shown, in some embodiments, the first distributed Bragg reflector 17 includes a first reflective layer 1702 and a second reflective layer 1703, and the first metal electrode 18 includes a first metal layer 1802 and a second metal layer 1803. The second reflective layer 1703 is disposed in the middle of one side of the first reflective layer 1702. The side of the second reflective layer 1703 away from the first reflective layer 1702 is connected to the first metal layer 1802. The second metal layer 1803 is disposed around the side of the first metal layer 1802 close to the first reflective layer 1702. The side of the second metal layer 1803 away from the first metal layer 1802 is connected to the first reflective layer 1702. A first groove 1701 is formed around the second reflective layer 1703. A protrusion 1801 is formed on the first metal layer 1802. The second metal layer 1803 is sleeved on the second reflective layer 1703.

[0129] It is understandable that both the first reflective layer 1702 and the second reflective layer 1703 are used for light conduction and electrical conduction, and both the first metal layer 1802 and the second metal layer 1803 are used for electrical conduction. When light passes through the first reflective layer 1702 and the second reflective layer 1703, the light is resonantly amplified by the high reflectivity of the first reflective layer 1702 and the second reflective layer 1703, ensuring the formation of laser light. When electricity passes through the first reflective layer 1702, the second reflective layer 1703, the second metal layer 1803, and the first metal layer 1802, it can ensure the formation of an electrical circuit, thereby ensuring that the vertical cavity surface-emitting laser can perform electro-optical conversion.

[0130] Since the side of the second metal layer 1803 furthest from the first metal layer 1802 is connected to the first reflective layer 1702, and the resistance of the second metal layer 1803 is less than that of the second reflective layer 1703, a large amount of electricity after passing through the first reflective layer 1702 enters the first metal layer 1802 through the second metal layer 1803, while very little electricity enters the first metal layer 1802 through the second reflective layer 1703. This achieves the separation of the conduction path and the electrical conduction path within the first distributed Bragg reflector 17, thereby preventing the heat generated by optical conduction and electrical conduction from accumulating simultaneously within the distributed Bragg reflector, and thus effectively improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0131] Furthermore, since the resistance of the second metal layer 1803 is less than that of the second reflective layer 1703, the overall resistance of the first distributed Bragg reflector 17 is reduced, resulting in higher electrical conductivity and less heat generation, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser. At the same time, since the thermal conductivity of the second metal layer 1803 is greater than that of the second reflective layer 1703, the heat dissipation efficiency of the first distributed Bragg reflector 17 is improved, thereby further improving the conversion efficiency of the vertical cavity surface-emitting laser.

[0132] It should be noted that the second metal layer 1803 and the second reflective layer 1703 are adapted to each other. The second metal layer 1803 is annular and is sleeved on the second reflective layer 1703. The thickness of the second metal layer 1803 and the second reflective layer 1703 can be set according to actual needs and is not limited. For example, the thickness of the second metal layer 1803 and the second reflective layer 1703 can be much greater than the thickness of the first reflective layer 1702 and the first metal layer 1802.

[0133] like Figure 6As shown, this disclosure also proposes an electro-optic conversion unit 1, including a photoelectric conduction structure as described in this disclosure, an active layer 16, and a second distributed Bragg reflector 13. The active layer 16 is disposed on the side of the first distributed Bragg reflector 17 away from the first metal electrode 18 in the photoelectric conduction structure, and the second distributed Bragg reflector 13 is disposed on the side of the active layer 16 away from the first distributed Bragg reflector 17.

[0134] It is understandable that when electricity passes through the second distributed Bragg reflector 13, the active layer 16, the first distributed Bragg reflector 17, and the first metal electrode 18, the active layer 16 converts electricity into light. The photons generated by the active layer 16 are continuously reflected and amplified in the resonant cavity formed between the first distributed Bragg reflector 17 and the second distributed Bragg reflector 13, thereby forming a laser.

[0135] In this process, since the protrusion 1801 on the first metal electrode 18 fills the first groove 1701 of the first distributed Bragg reflector 17, the electrical conduction portion of the first metal electrode 18 replaces the photoelectric conduction portion of the first distributed Bragg reflector 17. Furthermore, since the resistance of the first metal electrode 18 is lower than the resistance of the first distributed Bragg reflector 17, a larger amount of current passing through the first distributed Bragg reflector 17 is transferred to the protrusion 1801, which has a lower resistance. This achieves the separation of the optical conduction path and the electrical conduction path within the first distributed Bragg reflector 17, thereby preventing the heat generated by optical conduction and electrical conduction from accumulating simultaneously within the distributed Bragg reflector and effectively improving the conversion efficiency of the electro-optical conversion unit 1.

[0136] Furthermore, since the resistance of the first metal electrode 18 is less than that of the first distributed Bragg reflector 17, the overall resistance of the first distributed Bragg reflector 17 is reduced, resulting in higher electrical conductivity and less heat generation, thereby further improving the conversion efficiency of the electro-optical conversion unit 1. At the same time, since the thermal conductivity of the first metal electrode 18 is greater than that of the first distributed Bragg reflector 17, the heat dissipation efficiency of the first distributed Bragg reflector 17 is improved, thereby further improving the conversion efficiency of the electro-optical conversion unit 1.

[0137] like Figure 6 As shown, in some embodiments, the electro-optic conversion unit 1 further includes a second metal electrode 11, which is disposed around the side of the second distributed Bragg reflector 13 away from the active layer 16, and a light emission port 1101 is formed in the middle of the second metal electrode 11.

[0138] It is understandable that the first metal electrode 18 and the second metal electrode 11 are used to connect to an external power source. Through the electrical conduction of the first metal electrode 18, the first distributed Bragg reflector 17, the active layer 16, the second distributed Bragg reflector 13, and the second metal electrode 11, the formation of the electrical circuit in the electro-optical conversion unit 1 is ensured, thereby ensuring the efficient electro-optical conversion of the active layer 16. At the same time, due to the formation of the light emission port 1101, the electro-optical conversion unit 1 can not only use the second metal electrode 11 for efficient electrical conduction, but also use the light emission port 1101 to emit laser light, ensuring the realization of the laser emission function of the electro-optical conversion unit 1.

[0139] like Figure 6 As shown, in some embodiments, the electro-optic conversion unit 1 further includes an electrode contact layer 12, which is disposed on the side of the second distributed Bragg reflector 13 away from the active layer 16, and the second metal electrode 11 is disposed around the side of the electrode contact layer 12 away from the second distributed Bragg reflector 13.

[0140] It is understood that the electrode contact layer 12 is used to efficiently conduct the current between the second metal electrode 11 and the second distributed Bragg reflector 13, so that the electro-optic conversion unit 1 can form a stable electrical circuit using the second metal electrode 11, the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, the first distributed Bragg reflector 17, and the first metal electrode 18, thereby ensuring the efficient electro-optic conversion of the active layer 16. At the same time, since the second metal electrode 11 is disposed around the electrode contact layer 12 on the side away from the second distributed Bragg reflector 13, the light emission port 1101 is formed on the electrode contact layer 12, so that the electro-optic conversion unit 1 can emit laser light using the light emission port 1101 on the electrode contact layer 12, thus ensuring the realization of the laser emission function of the electro-optic conversion unit 1.

[0141] like Figure 6 As shown, in some embodiments, the electro-optic conversion unit 1 further includes a passivation layer 112. One end of the passivation layer 112 is connected to the side of the second metal electrode 11 near the second metal layer 1803 in the photoelectric conduction structure, and the other end of the passivation layer 112 away from the second metal electrode 11 is connected to the side of the second metal layer 1803 near the second metal electrode 11. One side of the passivation layer 112 covers the edge of the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, and the first reflective layer 1702 in the photoelectric conduction structure.

[0142] It is understandable that since one side of the passivation layer 112 covers the edges of the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, and the first reflective layer 1702, the passivation layer 112 can be used to insulate the edges of the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, and the first reflective layer 1702, thereby avoiding leakage and short circuit problems between the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, and the first reflective layer 1702, thus ensuring the stable conversion of the electro-optical conversion unit 1.

[0143] like Figure 6 As shown, in some embodiments, the electro-optic conversion unit 1 further includes a heat dissipation conductor 113, which is disposed on the side of the second metal electrode 11 near the second metal layer 1803, and the other side of the passivation layer 112 covers the heat dissipation conductor 113.

[0144] It is understandable that, since one side of the passivation layer 112 covers the edge of the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, and the first reflective layer 1702, and the other side of the passivation layer 112 covers the heat dissipation conductor 113, the heat dissipation conductor 113 can not only be insulated from the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, the first reflective layer 1702, and the second metal layer 1803, thus avoiding leakage and short circuit problems between the heat dissipation conductor 113, the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, the first reflective layer 1702, and the second metal layer 1803, ensuring the stable conversion of the electro-optical conversion unit 1, but also allows the electrode contact layer 12, the second distributed Bragg reflector 13, the active layer 16, the first reflective layer 1702, and the second metal layer 1803 to dissipate heat using the heat dissipation conductor 113, thereby further improving the heat dissipation efficiency of the electro-optical conversion unit 1, and thus improving the conversion efficiency of the electro-optical conversion unit 1.

[0145] It should be noted that the heat dissipation conductor 113 is used for heat dissipation. The specific type of heat dissipation conductor 113 can be set according to actual needs and there is no limitation. For example, the heat dissipation conductor 113 is a metal structure that grows together with the second metal electrode 11.

[0146] like Figure 6As shown, in some embodiments, the electro-optic conversion unit 1 further includes an oxide layer 14 and a photoelectric confinement layer 15. The oxide layer 14 is disposed between the active layer 16 and the first distributed Bragg reflector 17, or between the active layer 16 and the second distributed Bragg reflector 13. The photoelectric confinement layer 15 is disposed within the oxide layer 14, and the photoelectric confinement layer 15 is located around the oxide layer 14 and forms a current-limiting hole 1501 in the middle of the oxide layer 14. The projection of the second reflective layer 1703 of the photoelectric conduction structure along the thickness direction of the electro-optic conversion unit 1 covers the projection of the current-limiting hole 1501 along the thickness direction of the electro-optic conversion unit 1.

[0147] It is understandable that, since the photoelectric confinement layer 15 is located around the oxide layer 14 and forms a flow-limiting hole 1501 in the middle of the oxide layer 14, the light and electricity passing through the oxide layer 14 can be confined to the flow-limiting hole 1501 in the middle of the oxide layer 14, thereby preventing the light and electricity passing through the oxide layer 14 from diffusing and leaking to the periphery of the oxide layer 14, and thus effectively improving the conversion efficiency of the electro-optical conversion unit 1.

[0148] In this case, since the projection of the second reflective layer 1703 along the thickness direction of the electro-optic conversion unit 1 covers the projection of the current limiting hole 1501 along the thickness direction of the electro-optic conversion unit 1, the second reflective layer 1703 can fully reflect the light passing through the current limiting hole 1501, thereby avoiding light loss and thus improving the conversion efficiency of the electro-optic conversion unit 1.

[0149] like Figure 6 As shown, in some embodiments, the electro-optic conversion unit 1 further includes a welding layer 19 and a first substrate 110. The welding layer 19 is disposed on the side of the first metal layer 1802 away from the second metal layer 1803 in the photoelectric conduction structure, and the first substrate 110 is disposed on the side of the welding layer 19 away from the first metal layer 1802.

[0150] It is understandable that the welding layer 19 ensures a stable connection between the first metal layer 1802 and the first substrate 110. The first substrate 110 not only provides support for the second metal electrode 11, electrode contact layer 12, second distributed Bragg reflector 13, active layer 16, first distributed Bragg reflector 17, and first metal electrode 18, ensuring stable conversion of the electro-optical conversion unit 1, but also facilitates heat dissipation of the electro-optical conversion unit 1, thereby improving the conversion efficiency of the electro-optical conversion unit 1.

[0151] like Figure 6 As shown in the embodiments of this disclosure, a vertical cavity surface-emitting laser is also proposed, including one electro-optic conversion unit 1 as described in the embodiments of this disclosure, or multiple electro-optic conversion units 1 as described in the embodiments of this disclosure, wherein the multiple electro-optic conversion units 1 are connected in an array in sequence.

[0152] It is understandable that when electricity passes through the second distributed Bragg reflector 13, the active layer 16, the first distributed Bragg reflector 17, and the first metal electrode 18, the active layer 16 converts electricity into light. The photons generated by the active layer 16 are continuously reflected and amplified in the resonant cavity formed between the first distributed Bragg reflector 17 and the second distributed Bragg reflector 13, thereby forming a laser.

[0153] In this process, since the protrusion 1801 on the first metal electrode 18 fills the first groove 1701 of the first distributed Bragg reflector 17, the electrical conduction portion of the first metal electrode 18 replaces the photoelectric conduction portion of the first distributed Bragg reflector 17. Furthermore, since the resistance of the first metal electrode 18 is lower than the resistance of the first distributed Bragg reflector 17, a larger amount of current passing through the first distributed Bragg reflector 17 is transferred to the protrusion 1801, which has a lower resistance. This achieves the separation of the optical conduction path and the electrical conduction path within the first distributed Bragg reflector 17, thereby preventing the heat generated by optical conduction and electrical conduction from accumulating simultaneously within the distributed Bragg reflector and effectively improving the conversion efficiency of the electro-optical conversion unit 1.

[0154] Furthermore, since the resistance of the first metal electrode 18 is less than that of the first distributed Bragg reflector 17, the overall resistance of the first distributed Bragg reflector 17 is reduced, resulting in higher electrical conductivity and less heat generation, thereby further improving the conversion efficiency of the electro-optical conversion unit 1. At the same time, since the thermal conductivity of the first metal electrode 18 is greater than that of the first distributed Bragg reflector 17, the heat dissipation efficiency of the first distributed Bragg reflector 17 is improved, thereby further improving the conversion efficiency of the electro-optical conversion unit 1.

[0155] A vertical cavity surface-emitting laser (VCSEL) consisting of a single electro-optic conversion unit 1 or multiple electro-optic conversion units 1 connected in an array can stably emit laser light, thereby meeting the application requirements.

[0156] It should be noted that in the description of this disclosure, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance. Furthermore, in the description of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0157] Any process or method described in the flowchart or otherwise herein can be understood to represent a module, segment, or portion of code comprising: one or more executable instructions for implementing a particular logical function or process, and the scope of preferred embodiments of this disclosure includes: additional implementations in which functions may be performed not in the order shown or discussed, including: functions performed substantially simultaneously or in reverse order, depending on the functionality involved, as would be understood by those skilled in the art to which embodiments of this disclosure pertain.

[0158] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0159] Although embodiments of the present disclosure have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present disclosure. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present disclosure.

Claims

1. A method for fabricating a vertical-cavity surface-emitting laser, comprising: An electro-optic conversion section was fabricated, and the back side of the electro-optic conversion section is a first distributed Bragg reflector; A first groove is fabricated on the back side of the first distributed Bragg reflector; A first metal electrode is fabricated on the back side of the first distributed Bragg reflector, and the front protrusion of the first metal electrode fills the first groove. A first substrate is prepared on the back side of the first metal electrode; The electro-optic conversion section is fabricated by: sequentially growing a first distributed Bragg reflector, an active layer, an oxide layer, and a second distributed Bragg reflector on a second substrate using organometallic chemical vapor deposition (HCVD) or molecular beam epitaxy (MBE), or sequentially growing a first distributed Bragg reflector, an oxide layer, an active layer, and a second distributed Bragg reflector on a second substrate using organometallic chemical vapor deposition (HCVD) or MBE; defining multiple first unit structures on the front side of the second distributed Bragg reflector using a first photolithographic mask pattern; fabricating multiple second grooves penetrating to the bottom of the first grooves based on the multiple first unit structures using an etching method, so as to separate multiple electro-optic conversion sections using the second grooves; fabricating an electrode contact layer on the front side of the second distributed Bragg reflector using a dielectric film growth process, a second photolithographic mask pattern, a third photolithographic mask pattern, and a metal growth process; and sequentially fabricating a passivation layer and a second metal electrode in the second groove, with the second metal electrode extending out of the second groove and covering the periphery of the front side of the electrode contact layer, wherein the thermal conductivity of the first substrate is greater than that of the second substrate; The process of fabricating a first groove on the back side of a first distributed Bragg reflector includes: fabricating a third substrate on the front side of a second metal electrode and an electrode contact layer; removing the second substrate to expose the first distributed Bragg reflector; defining a plurality of second unit structures corresponding to the first unit structure on the back side of the first distributed Bragg reflector; fabricating a plurality of first grooves on the back side of the first distributed Bragg reflector according to the plurality of second unit structures; and removing the third substrate after fabricating the first substrate on the back side of the first metal electrode. Before the passivation layer and the second metal electrode are sequentially prepared in the second groove, the preparation of the electro-optic conversion part further includes: preparing a photoelectric confinement layer around the oxide layer using the second groove, and forming a current-limiting hole in the middle of the oxide layer, wherein the projection of the current-limiting hole along the thickness direction of the electro-optic conversion part does not overlap with the projection of the first groove along the thickness direction of the electro-optic conversion part.

2. The method for fabricating a vertical-cavity surface-emitting laser according to claim 1, wherein fabricating a first groove on the back side of the first distributed Bragg reflector comprises: On the back of the first distributed Bragg reflector, multiple second unit structures corresponding to the first unit structure are defined using a fourth photolithographic mask pattern. The first groove was fabricated within the second unit structure using a fifth photolithographic mask pattern and etching method.

3. The method for fabricating a vertical-cavity surface-emitting laser according to claim 1, The electro-optic conversion part was fabricated including: A corrosion stop layer and a first distributed Bragg reflector are sequentially fabricated on a second substrate using organometallic chemical vapor deposition or molecular beam epitaxy. Removing the second substrate includes: spin-coating a protective layer on the side of the electro-optic conversion section; The second substrate and etch stop layer are removed by wet etching or dry etching.

4. The method for fabricating a vertical-cavity surface-emitting laser according to claim 1, characterized in that, The preparation of a third substrate on the front side of the second metal electrode and the electrode contact layer includes: spin-coating a transition adhesive onto the front side of the second metal electrode and the electrode contact layer; and using the transition adhesive to bond the third substrate to the front side of the second metal electrode and the electrode contact layer. Removing the third substrate includes removing the transitional adhesive using acetone or ultraviolet laser to remove the third substrate.

5. The method for fabricating a vertical-cavity surface-emitting laser according to claim 1, characterized in that, The fabrication of the electro-optic conversion part also includes: A photoelectric confinement layer is prepared using a wet oxidation method or a proton implantation method, and a flow-limiting hole with a circular, rhomboid, or elliptical shape is formed in the middle of the oxide layer.

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