Memristor and transistor based logic gate devices, control methods, and circuits
By vertically stacking memristors and transistors to form logic gate devices, the problem of large area of transistor logic gate circuits is solved, resulting in smaller circuit footprint and higher efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- TSINGHUA UNIVERSITY
- Filing Date
- 2023-08-11
- Publication Date
- 2026-06-02
AI Technical Summary
In the existing technology, transistor-based logic gate circuits have a large area, making it difficult to further reduce their size.
The logic gates are based on memristors and transistors. The memristor and transistor modules are combined in a vertical stacking structure. The top electrode and gate electrode are used to control the input and output of the logic gates respectively to realize logic functions.
Implementing logic functions in a single device significantly reduces circuit area, improves area efficiency, and is compatible with mainstream circuit designs.
Smart Images
Figure CN117200786B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of information engineering technology, and in particular to a logic gate device, control method, and circuit based on memristors and transistors. Background Technology
[0002] The scaling of integrated circuits has benefited from the ever-shrinking transistor size, but as transistor size enters the atomic level, size reduction gradually faces bottlenecks. However, for circuits with fixed functions, there are other ways to reduce circuit area. For example, digital circuits are usually composed of basic units with fixed functions, which are implemented by connecting multiple transistors or devices. But if the functions of these basic units can be implemented using a single device, the circuit area can be significantly reduced.
[0003] Current research has reported the development of a transistor based on two-dimensional materials, which can implement gate logic functions in a single device. Specifically, by utilizing the dual-surface channel characteristics of two-dimensional materials, the upper and lower plates of the transistor can modulate the channel current separately to control the device's operating state. Compared to logic gate units composed of traditional transistors, the circuit area is halved, and changes in illumination can alter the device's operating mode, enabling AND-OR logic conversions. However, due to the use of a dual-gate transistor structure, the circuit area is relatively large. Summary of the Invention
[0004] This invention provides a logic gate device, control method, and circuit based on memristors and transistors to address the shortcomings of large circuit area in existing technologies, thereby reducing the circuit area while still achieving basic logic functions.
[0005] The present invention provides a logic gate device based on memristors and transistors, comprising: a top electrode, a resistive switching layer, a first bottom electrode, a second bottom electrode, a channel, a gate dielectric layer, and a gate electrode;
[0006] The gate dielectric layer is formed on the gate electrode;
[0007] The channel is formed on the gate dielectric layer;
[0008] The first bottom electrode and the second bottom electrode are formed on the channel, and the first bottom electrode and the second bottom electrode are spaced apart.
[0009] The resistive switching layer is formed on the first bottom electrode, the second bottom electrode, and the spacer;
[0010] The top electrode is formed on the resistive switching layer;
[0011] The top electrode, resistive switching layer, first bottom electrode and second bottom electrode constitute a memristor module, and the first bottom electrode, second bottom electrode, channel, gate dielectric layer and gate electrode constitute a transistor module.
[0012] The top electrode serves as the first input terminal of the logic gate device; the gate electrode serves as the second input terminal of the logic gate device; and both the first bottom electrode and the second bottom electrode serve as the output terminals of the logic gate device.
[0013] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the top electrode is used to input a first pulse signal; the first pulse signal includes a high-level pulse signal or a low-level pulse signal;
[0014] The gate electrode is used to input a second pulse signal; the second pulse signal includes a high-level pulse signal or a low-level pulse signal; wherein, the high-level pulse signal serves as the logic value 1 of the logic gate device; and the low-level pulse signal serves as the logic value 0 of the logic gate device.
[0015] The first bottom electrode and the second bottom electrode are used to output current; the current is used to determine the result of the logic calculation.
[0016] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the top electrode is made of an active metal, the active metal including at least one of Ag, TiN and Ti.
[0017] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the resistive switching layer is made of an insulating material having resistive switching properties, the insulating material comprising HfO. x ZrO x At least one of Al2O3.
[0018] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the first bottom electrode and the second bottom electrode are made of metal, and the metal includes at least one of Pt, Ti and Pd.
[0019] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the channel is made of a single layer or multiple layers of two-dimensional material, the two-dimensional material including molybdenum disulfide.
[0020] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the gate dielectric layer is made of SiO2.
[0021] According to the present invention, a logic gate device based on memristors and transistors is provided, wherein the gate electrode is made of Si.
[0022] The present invention also provides a control method for logic gate devices based on memristors and transistors, comprising:
[0023] Set the memristor in the memristor module to a high-resistance state;
[0024] A first pulse signal is input to the top electrode and a second pulse signal is input to the gate electrode to change the resistance state of the memristor in the memristor module and the channel switching state of the transistor in the transistor module.
[0025] A pre-set measurement voltage is input to the first bottom electrode and the second bottom electrode;
[0026] Read the output current of the first bottom electrode or the second bottom electrode of the logic gate device;
[0027] The output level of the logic gate device is determined based on the output current to obtain the result of the logic calculation.
[0028] The present invention also provides a logic gate circuit, including any of the logic gate devices based on memristors and transistors described above.
[0029] The present invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the control method of logic gate devices based on memristors and transistors as described above.
[0030] The present invention also provides a non-transitory computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the control method of logic gate devices based on memristors and transistors as described above.
[0031] The present invention also provides a computer program product, including a computer program that, when executed by a processor, implements the control method of logic gate devices based on memristors and transistors as described above.
[0032] This invention provides a logic gate device, control method, and circuit based on memristors and transistors. The logic gate device based on memristors and transistors includes: a top electrode, a resistive switching layer, a first bottom electrode, a second bottom electrode, a channel, a gate dielectric layer, and a gate electrode; the gate dielectric layer is formed on the gate electrode; the channel is formed on the gate dielectric layer; the first bottom electrode and the second bottom electrode are formed on the channel, and the first bottom electrode and the second bottom electrode are spaced apart; the resistive switching layer is formed on the first bottom electrode, the second bottom electrode, and the space; the top electrode is formed on the resistive switching layer; the top electrode, the resistive switching layer, the first bottom electrode, and the second bottom electrode constitute a memristor module; the first bottom electrode, the second bottom electrode, the channel, the gate dielectric layer, and the gate electrode constitute a transistor module; the top electrode serves as the first input terminal of the logic gate device; the gate electrode serves as the second input terminal of the logic gate device; the first bottom electrode and the second bottom electrode both serve as output terminals of the logic gate device. This invention utilizes a vertically stacked memristor configuration, consisting of a two-dimensional material transistor module and a memristor module from bottom to top, enabling a single logic gate device to achieve basic logic functions and reducing circuit area. Attached Figure Description
[0033] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.
[0034] Figure 1 This is a schematic diagram of the structure of an embodiment of the logic gate device based on memristors and transistors provided by the present invention;
[0035] Figure 2 This is a schematic diagram of the circuit symbols of a memristor and transistor, representing an embodiment of the logic gate device based on memristors and transistors provided by the present invention.
[0036] Figure 3 This is a schematic diagram of the internal equivalent circuit composition of an embodiment of the logic gate device based on memristors and transistors provided by the present invention;
[0037] Figure 4 This is a flowchart illustrating the control method for logic gate devices based on memristors and transistors;
[0038] Figure 5 The Hspice simulation provided by this invention Figure 3 The transient characteristic diagram of the logic gate obtained from the equivalent memristor circuit shown is as follows;
[0039] Figure 6This is a schematic diagram of the structure of the electronic device provided by the present invention.
[0040] Figure label:
[0041] 101: Top electrode; 102: Resistive switching layer; 103: First bottom electrode; 104: Second bottom electrode; 105: Channel; 106: Gate dielectric layer; 107: Gate electrode; 108: Top electrode; 109: Bottom electrode; 201: First memristor; 202: Second memristor; 203: Transistor; 204: Current limiting resistor. Detailed Implementation
[0042] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.
[0043] Since the size of a single logic gate device made of two-dimensional material transistors has limited shrinkage, there is an urgent need for a new single logic gate device with a smaller area.
[0044] Memristors, as devices that combine storage and control functions, have been key research areas in in-memory computing in recent years. Currently, there are reports proposing the use of several memristors to implement basic logic functions. Based on this, integrating several memristors into a single device can also achieve the formation of basic logic units using a single device. However, logic circuits implemented based on memristor arrays do not offer area advantages. Since the structure of memristors is typically relatively simple, requiring only a combination of an upper plate, a lower plate, and a dielectric layer, this invention provides a logic gate device that combines memristors and transistor structures, aiming to achieve the required logic functions more efficiently, reduce the area of integrated circuits, and significantly reduce circuit costs.
[0045] The following is combined Figures 1-6 The present invention describes logic gate devices, control methods, and circuits based on memristors and transistors. Figure 1 This is a schematic diagram of the structure of an embodiment of the logic gate device based on memristors and transistors provided by the present invention, as shown below. Figure 1 As shown, the logic gate device based on memristors and transistors includes: a top electrode 101, a resistive switching layer 102, a first bottom electrode 103, a second bottom electrode 104, a channel 105, a gate dielectric layer 106, and a gate electrode 107.
[0046] The gate dielectric layer 106 is formed on the gate electrode 107;
[0047] The channel 105 is formed on the gate dielectric layer 106;
[0048] The first bottom electrode 103 and the second bottom electrode 104 are formed on the channel 105, and the first bottom electrode 103 and the second bottom electrode 104 are spaced apart.
[0049] The resistive switching layer 102 is formed on the first bottom electrode 103, the second bottom electrode 104 and the spacer;
[0050] The top electrode 101 is formed on the resistive switching layer 102;
[0051] The top electrode 101, resistive switching layer 102, first bottom electrode 103 and second bottom electrode 104 constitute a memristor module, and the first bottom electrode 103, second bottom electrode 104, channel 105, gate dielectric layer 106 and gate electrode 107 constitute a transistor module.
[0052] The top electrode 101 serves as the first input terminal of the logic gate device; the gate electrode 107 serves as the second input terminal of the logic gate device; and the first bottom electrode 103 and the second bottom electrode 104 both serve as the output terminals of the logic gate device.
[0053] In some embodiments, transistors are fabricated using photolithography, and memristors are fabricated on top of the transistors using techniques such as nanoimprint lithography, solution fabrication, and electron beam lithography. In specific operations, the methods for fabricating transistors and memristors can be selected as needed; the examples provided are not intended to limit the scope of the invention.
[0054] In the formation process, this invention utilizes a vertically stacked memristor configuration, consisting of a two-dimensional material transistor module and a memristor module from bottom to top. It is understood that the transistor and memristor share a first bottom electrode 103 and a second bottom electrode 104, which are spaced apart, serving as the lower plate of the memristor and simultaneously as the source and drain electrodes of the transistor. It should be noted that the first bottom electrode 103 and the second bottom electrode 104 are spaced apart to prevent mutual interference. In some embodiments, for ease of fabrication, the first bottom electrode 103 and the second bottom electrode 104 are parallel and spaced apart. Further, as... Figure 1 As shown, in actual operation, to facilitate large-scale production and assembly, the logic gate devices based on memristors and transistors are configured with regular shapes for each layer, and the first bottom electrode 103 and the second bottom electrode 104 are flush with the two side edges of the channel 105. However, this does not imply a limitation on the present invention.
[0055] Furthermore, the first bottom electrode 103 and the second bottom electrode 104 can also be referred to as the source and drain electrodes, respectively.
[0056] This invention forms a gate dielectric layer 106 on the gate electrode 107, a channel 105 on the gate dielectric layer 106, and a first bottom electrode 103 and a second bottom electrode 104 spaced apart on the channel 105. A resistive switching layer 102 is formed on the first bottom electrode 103, the second bottom electrode 104, and the spaced area, and the resistive switching layer 102 forms the top electrode 101, thus obtaining a logic gate device based on memristors and transistors. This allows a single logic gate device to implement basic logic functions, reducing circuit area. In the upper part, the top electrode 101, the first bottom electrode 103, and the second bottom electrode 104 form a memristor module, and the conversion between high-resistivity and low-resistivity states is achieved through the formation and breakage of conductive filaments. The first bottom electrode 103, the second bottom electrode 104, the gate electrode 107, and the gate dielectric layer 106 form a transistor module. The transistor module in the lower part is controlled by the gate electrode 107 and the gate dielectric layer 106. The memristor section can change its resistance state through a voltage pulse on the top electrode 101, while the transistor section can control the switching of the channel 105 through the gate electrode 107. This invention utilizes a vertically stacked configuration to integrate two switching structures on a single device area. The top electrode 101 and the gate electrode 107 control the opening and closing states of the two structures respectively, thereby controlling the device's output current. This allows logic gate functionality to be implemented within a single device, reducing the circuit area required to implement fixed logic functions.
[0057] Figure 2 The circuit symbol diagrams of the memristor and transistor provided by this invention are shown. Figure 2 (a) is a schematic diagram of the circuit symbol of a memristor, where 108 is the top electrode of the memristor and 109 is the bottom electrode of the memristor. Figure 2 (b) is a schematic diagram of the circuit symbol of a transistor, where 110 is the gate electrode of the transistor, and 111 and 112 are the drain or source electrodes of the transistor, corresponding to the first bottom electrode 103 or the second bottom electrode 104.
[0058] Furthermore, Figure 3 A schematic diagram of the internal equivalent circuit composition of one embodiment is shown, such as Figure 3 As shown, the circuit includes a first memristor 201, a second memristor 202, a bottom-gate controlled two-dimensional thin-film transistor 203, and a current-limiting resistor 204. In practical applications, the first bottom electrode 103 and the second bottom electrode 104 each form two memristors with the top electrode 101. Corresponding to the first memristor 201 and the second memristor 202, IN1 is the first input terminal, IN2 is the second input terminal, and the voltage VDD is a pre-set calculated voltage. It should be noted that the value of the calculated voltage is used to read the current of the first bottom electrode 103 and the second bottom electrode 104 according to the circuit's pre-set values. In order not to affect the resistance state of the memristor and the channel switching state of the transistor, it is generally a fixed and relatively small voltage.
[0059] In some embodiments, the top electrode 101 is used to input a first pulse signal; the first pulse signal includes a high-level pulse signal or a low-level pulse signal;
[0060] The gate electrode 107 is used to input a second pulse signal; the second pulse signal includes a high-level pulse signal or a low-level pulse signal; wherein, the high-level pulse signal serves as the logic value 1 of the logic gate device; and the low-level pulse signal serves as the logic value 0 of the logic gate device.
[0061] The first bottom electrode 103 and the second bottom electrode 104 are used to output current; the current is used to determine the result of the logic calculation.
[0062] This invention influences the output current of a logic gate device based on memristors and transistors by altering the resistance state of the memristor through the top electrode and modulating the state of the two-dimensional material transistor channel 105 through the gate electrode 107. This achieves logic functionality while minimizing the area required. The logic gate can perform logic gate operations as a single device in the circuit and can be integrated. Using this single-device logic gate significantly improves the area utilization efficiency of traditional transistor-based logic gate circuits.
[0063] In some embodiments, the top electrode is made of an active metal, which includes at least one of Ag, TiN, and Ti.
[0064] In some embodiments, the resistive switching layer 102 is made of an insulating material having resistive switching properties, the insulating material including HfO. x ZrO x At least one of Al2O3.
[0065] In some embodiments, the first bottom electrode 103 and the second bottom electrode 104 are made of metal, including at least one of Pt, Ti and Pd.
[0066] In some embodiments, the channel 105 is made of a single layer or multiple layers of two-dimensional material, the two-dimensional material including molybdenum disulfide.
[0067] In some embodiments, the gate dielectric layer 106 is made of SiO2.
[0068] In some embodiments, the gate electrode 107 is made of Si.
[0069] It should be noted that the materials constituting the top electrode 101, resistive switching layer 102, first bottom electrode 103 and second bottom electrode 104, channel 105, gate dielectric layer 106 and gate electrode 107 of the present invention can be selected according to actual needs. The materials listed above do not constitute a limitation of the present invention, and other materials that can achieve the same effect are all within the protection scope of the technical solution of the present invention.
[0070] This invention, based on the operating characteristics of memristors and transistors, and their ability to be integrated into a single device, provides a novel solution for achieving high area efficiency single-device logic gates. Furthermore, traditional memristor-based computing circuits often require switching between resistive states, necessitating a conversion between resistive and voltage states for subsequent signal processing. In contrast, the single-device logic gates proposed in this invention perform voltage-to-current operations, offering better compatibility with mainstream circuit designs.
[0071] This invention provides a logic gate device based on memristors and transistors, comprising a top electrode 101, a resistive switching layer 102, a first bottom electrode 103, a second bottom electrode 104, a channel 105, a gate dielectric layer 106, and a gate electrode 107; the gate dielectric layer 106 is formed on the gate electrode 107; the channel 105 is formed on the gate dielectric layer 106; the first bottom electrode 103 and the second bottom electrode 104 are formed on the channel 105, and the first bottom electrode 103 and the second bottom electrode 104 are spaced apart; the resistive switching layer 102 is formed on the first bottom electrode 103, the second bottom electrode 104, and the gate electrode 107. The bottom electrode 104 and the spacer are used; the top electrode 101 is formed on the resistive switching layer 102; the top electrode 101, the resistive switching layer 102, the first bottom electrode 103 and the second bottom electrode 104 constitute a memristor module, and the first bottom electrode 103, the second bottom electrode 104, the channel 105, the gate dielectric layer 106 and the gate electrode 107 constitute a transistor module; the top electrode 101 serves as the first input terminal of the logic gate device; the gate electrode 107 serves as the second input terminal of the logic gate device; the first bottom electrode 103 and the second bottom electrode 104 both serve as the output terminals of the logic gate device. This invention utilizes a vertically stacked memristor configuration, consisting of a two-dimensional material transistor module and a memristor module from bottom to top, enabling a single logic gate device to achieve basic logic functions and reducing circuit area.
[0072] The control method for logic gate devices based on memristors and transistors provided by the present invention will be described below. The control method for logic gate devices based on memristors and transistors described below can be referred to in correspondence with the logic gate devices based on memristors and transistors described above. Figure 4 This is a flowchart illustrating the control method for logic gate devices based on memristors and transistors, such as... Figure 4As shown, the method includes:
[0073] Step 410: Set the memristor in the memristor module to a high-resistance state;
[0074] Step 420: Input a first pulse signal to the top electrode 101 and a second pulse signal to the gate electrode 107 to change the resistance state of the memristor in the memristor module and the switching state of the channel 105 of the transistor in the transistor module.
[0075] Step 430: Input a pre-set measurement voltage to the first bottom electrode 103 and the second bottom electrode 104;
[0076] Step 440: Read the output current of the first bottom electrode 103 or the second bottom electrode 104 of the logic gate device;
[0077] Step 450: Determine the output level of the logic gate device based on the output current to obtain the result of the logic calculation.
[0078] Specifically, firstly, a preset bit operation must be performed before performing logical operations to set the memristor to a high-impedance state.
[0079] Next, a first pulse signal is applied to the top electrode 101 to change the resistance state of the memristor in the memristor module. A second pulse signal is applied to the gate electrode 107 to modulate the state of the two-dimensional material transistor channel 105. It should be noted that the first and second pulse signals include either a high-level pulse signal or a low-level pulse signal; wherein, the high-level pulse signal serves as the logic value 1 of the logic gate device; and the low-level pulse signal serves as the logic value 0 of the logic gate device. It should be noted that the first and second pulse signals can be selected according to the actual situation; a level pulse signal can be directly used. However, this does not represent a limitation of the invention. In fact, any excitation signal that can change the resistance state of the memristor in the memristor module and modulate the state of the two-dimensional material transistor channel 105 can be used as the first and second pulse signals.
[0080] Subsequently, since the resistance changes of the memristor in the memristor module and the state changes of the channel 105 of the two-dimensional material transistor will affect the output current level of the final logic gate, a pre-set measurement voltage is input to the first bottom electrode 103 and the second bottom electrode 104 to measure the output current of the electrodes after operation. It should be noted that the value of the measurement voltage is to read the current of the first bottom electrode 103 and the second bottom electrode 104 according to the circuit pre-set. In order not to affect the resistance state of the memristor and the switching state of the channel 105 of the transistor, it is generally a fixed and relatively small voltage.
[0081] Next, the output current of the first bottom electrode 103 or the second bottom electrode 104 of the logic gate device is read. It should be understood that current can only be measured at the source electrode. Accordingly, if the source electrode is the first bottom electrode 103, the output current of the first bottom electrode 103 of the logic gate device is read. If the source electrode is the second bottom electrode 104, the output current of the second bottom electrode 104 of the logic gate device is read. Furthermore, since the states of both the upper and lower parts of the logic gate device can be read through the source current—that is, the current of both the memristor module and the transistor module is reflected as the output current—basic logic functions are achieved by outputting current with input voltage, thus reducing circuit area.
[0082] Finally, the output current is processed to obtain the corresponding output level. The logic calculation result is obtained based on the high or low output level, thereby realizing different logic operations.
[0083] As shown in Tables 1 and 2, Table 1 is the truth table of the logic OR gate based on memristors and transistors provided by the present invention, and Table 2 is the truth table of the logic AND gate based on memristors and transistors provided by the present invention.
[0084] Table 1 Truth Table of Logic OR Gates
[0085] IN1 IN2 OUT 0 0 0 0 1 1 1 0 1 1 1 1
[0086] Table 2 Truth Table of Logic AND Gates
[0087] IN1 IN2 OUT 0 0 0 0 1 0 1 0 0 1 1 1
[0088] Furthermore, to verify the theoretical feasibility of the embodiments of the present invention, simulation was performed using the Hspice simulation tool. Figure 3 The equivalent circuit shown yields the transient diagram of the logic gates, as follows: Figure 5 As shown, the memristor module and transistor module are set to have the same output current when they are turned on. Simulation results show that when both logic inputs are high-level pulses, the output current is also high; when one input voltage is high and the other low, the output current is half of the former; and when both inputs are low, the output current is low. Based on this, the scheme implements the logic gate function. Therefore, the single-device logic gate proposed in this invention can theoretically complete logic gate operations after post-processing, and compared to the traditional transistor-based logic gate composition method, it reduces the area occupied by 50%, significantly reducing circuit cost.
[0089] This invention provides a logic gate control method based on memristors and transistors. The method utilizes the aforementioned logic gate devices based on memristors and transistors, which are vertically stacked to integrate two switching structures (upper and lower) on a single device area. For the upper part, the top electrode 101, the first bottom electrode 103, and the second bottom electrode 104 form a memristor module, achieving the transition between high and low resistance states through the formation and breakage of conductive filaments. The first bottom electrode 103, the second bottom electrode 104, the gate electrode 107, and the gate dielectric layer 106 form a transistor module. The lower part's transistor module is controlled by the gate electrode 107 and the gate dielectric layer 106. By inputting pulse signals to the top electrode 101 and the gate electrode 107, the opening and closing states of the upper and lower structures are controlled, thereby controlling the device's output current. This allows the logic gate function to be implemented within a single device, reducing the circuit area required to implement fixed logic functions.
[0090] The present invention also provides a logic gate circuit, including any of the above-mentioned logic gate devices based on memristors and transistors, the device comprising: a top electrode 101, a resistive switching layer 102, a first bottom electrode 103, a second bottom electrode 104, a channel 105, a gate dielectric layer 106, and a gate electrode 107; the gate dielectric layer 106 is formed on the gate electrode 107; the channel 105 is formed on the gate dielectric layer 106; the first bottom electrode 103 and the second bottom electrode 104 are formed on the channel 105, and the first bottom electrode 103 and the second bottom electrode 104 are spaced apart; the resistive switching layer 102 is formed on the first bottom electrode... The first bottom electrode 103, the second bottom electrode 104, and the spacer are formed on the first bottom electrode 103, the second bottom electrode 104, and the spacer. The top electrode 101 is formed on the resistive switching layer 102. The top electrode 101, the resistive switching layer 102, the first bottom electrode 103, and the second bottom electrode 104 constitute a memristor module. The first bottom electrode 103, the second bottom electrode 104, the channel 105, the gate dielectric layer 106, and the gate electrode 107 constitute a transistor module. The top electrode 101 serves as the first input terminal of the logic gate device. The gate electrode 107 serves as the second input terminal of the logic gate device. The first bottom electrode 103 and the second bottom electrode 104 both serve as the output terminals of the logic gate device.
[0091] Figure 6 An example is a schematic diagram of the physical structure of an electronic device, such as... Figure 6As shown, the electronic device may include: a processor 610, a communication interface 620, a memory 630, and a communication bus 640, wherein the processor 610, the communication interface 620, and the memory 630 communicate with each other through the communication bus 640. The processor 610 can call logic instructions in the memory 630 to execute a control method for logic gate devices based on memristors and transistors. The method includes: setting the memristor in the memristor module to a high-resistance state; inputting a first pulse signal to the top electrode and a second pulse signal to the gate electrode to change the resistance state of the memristor in the memristor module and the channel switching state of the transistor in the transistor module; inputting a pre-set measured voltage to the first bottom electrode and the second bottom electrode; reading the output current of the first bottom electrode or the second bottom electrode of the logic gate device; and determining the output level of the logic gate device based on the output current to obtain the result of the logic calculation.
[0092] Furthermore, the logical instructions in the aforementioned memory 630 can be implemented as software functional units and, when sold or used as independent products, can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, essentially, or the part that contributes to the prior art, or a part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.
[0093] On the other hand, the present invention also provides a computer program product, which includes a computer program that can be stored on a non-transitory computer-readable storage medium. When the computer program is executed by a processor, the computer can execute the control method for logic gate devices based on memristors and transistors provided by the above methods. The method includes: setting the memristor in the memristor module to a high-resistance state; inputting a first pulse signal to the top electrode and a second pulse signal to the gate electrode to change the resistance state of the memristor in the memristor module and the channel switching state of the transistor in the transistor module; inputting a pre-set measured voltage to the first bottom electrode and the second bottom electrode; reading the output current of the first bottom electrode or the second bottom electrode of the logic gate device; and determining the output level of the logic gate device based on the output current to obtain the result of the logic calculation.
[0094] In another aspect, the present invention also provides a non-transitory computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements a control method for a logic gate device based on memristors and transistors provided by the methods described above. The method includes: setting a memristor in the memristor module to a high-resistance state; inputting a first pulse signal to the top electrode and a second pulse signal to the gate electrode to change the resistance state of the memristor in the memristor module and the channel switching state of the transistor in the transistor module; inputting a pre-set measured voltage to the first bottom electrode and the second bottom electrode; reading the output current of the first bottom electrode or the second bottom electrode of the logic gate device; and determining the output level of the logic gate device based on the output current to obtain the result of a logic calculation.
[0095] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.
[0096] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.
[0097] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims
1. A logic gate device based on memristors and transistors, characterized in that, include: Top electrode, resistive switching layer, first bottom electrode, second bottom electrode, channel, gate dielectric layer, and gate electrode; The gate dielectric layer is formed on the gate electrode; The channel is formed on the gate dielectric layer; The first bottom electrode and the second bottom electrode are formed on the channel, and the first bottom electrode and the second bottom electrode are spaced apart. The resistive switching layer is formed on the first bottom electrode, the second bottom electrode, and the spacer; The top electrode is formed on the resistive switching layer; The top electrode, resistive switching layer, first bottom electrode and second bottom electrode constitute a memristor module, and the first bottom electrode, second bottom electrode, channel, gate dielectric layer and gate electrode constitute a transistor module. The top electrode serves as the first input terminal of the logic gate device; the gate electrode serves as the second input terminal of the logic gate device; and both the first bottom electrode and the second bottom electrode serve as the output terminals of the logic gate device.
2. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The top electrode is used to input a first pulse signal; the first pulse signal includes a high-level pulse signal or a low-level pulse signal. The gate electrode is used to input a second pulse signal; the second pulse signal includes a high-level pulse signal or a low-level pulse signal; wherein, the high-level pulse signal serves as the logic value 1 of the logic gate device; and the low-level pulse signal serves as the logic value 0 of the logic gate device. The first bottom electrode and the second bottom electrode are used to output current; the current is used to determine the result of the logic calculation.
3. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The top electrode is made of an active metal, which includes at least one of Ag, TiN, and Ti.
4. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The resistive switching layer is made of an insulating material with resistive switching properties, the insulating material including HfO. x ZrO x At least one of Al2O3.
5. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The first and second bottom electrodes are made of metal, including at least one of Pt, Ti and Pd.
6. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The channel is made of a single layer or multiple layers of two-dimensional material, including molybdenum disulfide.
7. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The gate dielectric layer is made of SiO2.
8. The logic gate device based on memristors and transistors according to claim 1, characterized in that, The gate electrode is made of Si.
9. A control method for a logic gate device based on memristors and transistors, employing a logic gate device based on memristors and transistors as described in any one of claims 1-8, characterized in that, include: Set the memristor in the memristor module to a high-resistance state; A first pulse signal is input to the top electrode and a second pulse signal is input to the gate electrode to change the resistance state of the memristor in the memristor module and the channel switching state of the transistor in the transistor module. A pre-set measurement voltage is input to the first bottom electrode and the second bottom electrode; Read the output current of the first bottom electrode or the second bottom electrode of the logic gate device; The output level of the logic gate device is determined based on the output current to obtain the result of the logic calculation.
10. A logic gate circuit, characterized in that, Includes the logic gate devices based on memristors and transistors as described in any one of claims 1-8.