Molded body containing polyimide for semiconductor device test socket and method thereof

Abstract

This invention relates to a molded body for a semiconductor device test socket comprising polyimide resin and a method for manufacturing the same, characterized in that it is free of fillers and achieves excellent mechanical properties, stability of surface resistance for high-density energy, and heat resistance by optimizing the combination of monomers and the polymerization process.

Description

Technical Field

[0001] This invention relates to a molded body for a semiconductor device test socket with excellent mechanical and physical properties and outstanding surface resistance stability, and a method for manufacturing the same. Background Technology

[0002] Polyimide resin is a high-heat-resistant resin prepared by reacting aromatic tetracarboxylic acids or their derivatives with aromatic diamines or aromatic diisocyanates, followed by imidization. Polyimide resins can have various molecular structures depending on the type of monomer used.

[0003] In addition, various tests are performed after the semiconductor devices are manufactured to confirm the product's reliability. Semiconductor device test sockets are used for electrical signal detection of semiconductor devices in a non-destructive state. During electrical signal detection, the conductive contact portion of the semiconductor device and the upper end of the socket are pressed with appropriate pressure, and the socket is repeatedly contacted tens of thousands of times. That is, dozens to hundreds of conductive pins of the test socket simultaneously contact and perform electrical detection.

[0004] Therefore, the material used for semiconductor device test sockets should have a high flexural modulus and excellent wear resistance to prevent deformation such as warping under various stress conditions, and excellent machinability for processing microholes.

[0005] Furthermore, the material used for the semiconductor device test socket should have excellent surface resistivity stability to lasers so that it can be used in a dry cleaning system, which uses lasers to remove contaminants from the surface of the test socket after multiple performance evaluations of the semiconductor device.

[0006] Therefore, continuous efforts are being made to improve the yield of semiconductor manufacturing processes and increase the lifespan of test sockets by developing materials for semiconductor device test sockets that have the high flexural modulus, excellent dimensional stability, surface stability against high-density energy, and excellent processability as described above.

[0007] However, despite the efforts described above, poor contact or an unstable environment persists due to warping or damage to the test socket, resulting in problems such as even normal semiconductor devices being processed as defective. Furthermore, when using a dry cleaning system, the lifespan of the test socket is reduced due to laser damage to its surface.

[0008] Therefore, there is a need to develop a material with good mechanical and physical properties such as flexural modulus and dimensional stability, as well as surface stability against high-density energy and excellent processability. Summary of the Invention

[0009] Technical problems to be solved

[0010] The purpose of this invention is to provide a molded body for a semiconductor device test socket with excellent mechanical and physical properties such as flexural modulus, Young's modulus, tensile strength, and elongation, and outstanding surface resistance stability against lasers, as well as a method for manufacturing the same.

[0011] The objectives of this invention are not limited to those mentioned above. The objectives will become clearer from the following description, and will be achieved by the means and combinations thereof as described in the claims.

[0012] Technical solution

[0013] According to one embodiment of the present invention, the molded body for a semiconductor device test socket may comprise a polyimide resin polymerized from a diamine compound and an acid dianhydride compound, and the surface resistivity of the molded body for the semiconductor device test socket may be 1×10⁻⁶ when exposed to a laser with an energy of 200-500 mJ for more than 5000 cycles. 9 Ω / sq or higher.

[0014] The moisture absorption rate of the molded body can be below 0.15%.

[0015] The flexural modulus of the molded body can be 5000-6000MPa, the Young's modulus can be 3000-4000MPa, the tensile strength can be 100-200MPa, and the elongation can be 4-10%.

[0016] The molded body may be free of fillers.

[0017] The diamine compound may contain 60-80% by weight of p-phenylenediamine (p-PDA) and 20-40% by weight of m-phenylenediamine (m-PDA).

[0018] The acid dianhydride compound may contain 50-60% by weight of biphenyltetracarboxylic dianhydride (BPDA) and 40-50% by weight of pyromellitic dianhydride (PMDA).

[0019] A method for manufacturing a molded body for a semiconductor device test socket according to one embodiment of the present invention may include the steps of: polymerizing a diamine compound and an acid dianhydride compound to prepare a polyimide resin; and molding the polyimide resin.

[0020] The steps for preparing the polyimide resin may include the following steps: heating a solution containing the diamine compound and the acid dianhydride compound to a temperature of 90-120°C at a rate of 2-6°C / min for a primary reaction; and heating the product thereto to a temperature of 140-180°C at a rate of 2-6°C / min for a secondary reaction.

[0021] The manufacturing method may further include a step of calcining the molded polyimide resin.

[0022] The calcination step involves calcining the molded polyimide resin at a temperature of 300-500°C for 5-15 hours under a nitrogen atmosphere.

[0023] Beneficial effects

[0024] According to the present invention, a molded body for a semiconductor device test socket with excellent mechanical and physical properties such as flexural modulus, Young's modulus, tensile strength, and elongation, and outstanding surface resistance stability against lasers can be obtained.

[0025] The effects of this invention are not limited to those mentioned above. It should be understood that the effects of this invention include all effects that can be deduced from the following description. Detailed Implementation

[0026] The above-mentioned objects, other objects, features, and advantages of the present invention can be more readily understood through the following preferred embodiments. However, the present invention is not limited to the embodiments described herein, and the invention can be implemented through other embodiments. Furthermore, these embodiments are provided so that the disclosure is sufficient and complete and can fully convey the spirit of the invention to those skilled in the art.

[0027] The terms "first," "second," etc., can be used to describe various constituent elements, but the constituent elements described above should not be limited to these terms. These terms are used only for the purpose of distinguishing one constituent element from another. For example, without departing from the scope of the invention, a first constituent element may be named a second constituent element, and similarly, a second constituent element may be named a first constituent element. Unless otherwise expressly stated, singular expressions include plural expressions.

[0028] In this specification, terms such as "comprising," "including," or "having" are used to specify the presence of features, figures, steps, operations, constituent elements, components, or combinations thereof described in the specification, and do not preclude the existence or additional possibilities of one or more other features, figures, steps, operations, constituent elements, components, or combinations thereof. Furthermore, when describing a layer, film, region, plate, or other portion as being "on" another portion, this includes not only the case where it is "directly above" the other portion, but also the case where other portions exist between them. Conversely, when describing a layer, film, region, plate, or other portion as being "below" another portion, this includes not only the case where it is "directly below" the other portion, but also the case where other portions exist between them.

[0029] Unless otherwise stated, it should be understood that all figures, values, and / or expressions used in this specification to represent the amounts of components, reaction conditions, polymer compositions, and mixtures are approximations reflecting the various uncertainties that occur when these values ​​are obtained from substantially different sources, and are therefore modified in all cases by the term "about". Furthermore, when numerical ranges are disclosed in this specification, these ranges are continuous and, unless otherwise stated, include all values ​​from the minimum of these ranges to the maximum value including the maximum value. Further, when these ranges refer to integers, unless otherwise stated, they include all integers from the minimum value to the maximum value including the maximum value.

[0030] The molded body for a semiconductor device test socket according to the present invention is characterized in that it comprises a polyimide resin polymerized from a diamine compound and an acid dianhydride compound, and has a surface resistivity of 1×10⁻⁶ when exposed to a laser with an energy of 200-500 mJ for more than 5000 times. 9 Ω / sq or higher.

[0031] Whether the surface of the molded body is damaged can be confirmed by measuring its surface resistance. If the surface of the molded body is damaged, the surface resistance decreases. The surface resistance of the molded body exposed to a laser with a predetermined energy is 1 × 10⁻⁶. 9 A surface resistance of Ω / sq or higher indicates minimal surface damage, thus allowing it to be reused as a semiconductor device test socket. The upper limit of the surface resistance of the molded body is not specifically limited; for example, it can be 1 × 10⁻⁶. 10 Ω / sq or less or 1×10 11 Ω / sq or less or 1×10 12 Below Ω / sq.

[0032] Furthermore, the molded article is characterized by a moisture absorption rate of less than 0.15%. There is a trade-off between surface resistivity stability and moisture absorption rate; this invention, by appropriately adjusting the content of the components constituting the polyimide, can achieve a balanced improvement in both surface resistivity stability and moisture absorption rate. The lower limit of the moisture absorption rate is not particularly limited, and can be, for example, greater than 0.01%, greater than 0.05%, or greater than 0.10%.

[0033] Furthermore, the molded body is characterized by a flexural modulus of 5000-6000 MPa, a Young's modulus of 3000-4000 MPa, a tensile strength of 100-200 MPa, and an elongation of 4-10%. The molded body exhibits excellent mechanical and physical properties as described above, thus demonstrating significant dimensional stability under various stress conditions.

[0034] The polyimide resin contained in the molded body is described in detail below.

[0035] The polyimide resin can be polymerized from diamine compounds and acid dianhydride compounds.

[0036] The diamine compound is a mixture containing one or more aromatic diamine monomers, and may contain at least one selected from 4,4-diaminodiphenyl ether (ODA), p-phenylenediamine (p-PDA), m-phenylenediamine (m-PDA), 4,4-methylenebisphenylamine (MDA), 2,2-diaminophenylhexafluoropropane (HFDA), m-diaminophenoxydiphenyl sulfone (m-BAPS), p-diaminophenoxydiphenyl sulfone (p-BAPS), 1,4-diaminophenoxybenzene (TPE-Q), diaminophenoxybenzene (TPE-R), 2,2-diaminophenoxyphenylpropane (BAPP), 2,2-diaminophenoxyphenylhexafluoropropane (HFBAPP), 4,4-benzoyl aniline (DABA), and combinations thereof.

[0037] Specifically, the diamine compound may contain 60-80% by weight of p-phenylenediamine (p-PDA) and 20-40% by weight of m-phenylenediamine (m-PDA). When the contents of each component of the diamine compound are as described above, the surface resistivity, moisture absorption rate, and mechanical and physical properties can be improved in a balanced manner.

[0038] The dianhydride compound is a mixture containing one or more aromatic tetracarboxylic dianhydride monomers, which may be selected from at least one of pyromellitic dianhydride (PMDA), benzophenone tetracarboxylic dianhydride (BTDA), oxyphthalic dianhydride (ODPA), biphenyl tetracarboxylic dianhydride (BPDA), hexafluoroisopropyl diphthalic dianhydride (6-FDA), and combinations thereof.

[0039] Specifically, the acid dianhydride compound may contain 50-60% by weight of biphenyltetracarboxylic dianhydride (BPDA) and 40-50% by weight of pyromellitic dianhydride (PMDA). When the contents of each component of the acid dianhydride compound are as described above, the mechanical and physical properties of the molded article, such as flexural modulus and elongation, can be improved even without the use of fillers.

[0040] The polyimide resin can be represented by the following chemical formula 1.

[0041] [Chemical Formula 1]

[0042]

[0043] In the chemical formula 1, the Can be selected and

[0044] The Can be selected

[0045] and The number n can be between 170 and 680.

[0046] Specifically, the polyimide resin may comprise at least one of the following chemical formulas 2 to 5.

[0047] [Chemical Formula 2]

[0048]

[0049] [Chemical Formula 3]

[0050]

[0051] [Chemical Formula 4]

[0052]

[0053] [Chemical Formula 5]

[0054]

[0055] The values ​​of a to d can be 100 to 550, respectively.

[0056] The polyimide resin may have an intrinsic viscosity of 0.7-2.5 dl / g, a crystallinity of 20-30%, and a specific surface area (based on powdered polyimide resin) of 50-400 m². 2 / g of polyimide resin with an imidization degree of 98-99%. The polyimide resin has low crystallinity, high imidization degree and specific surface area, thus exhibiting excellent moldability and can be effectively compressed.

[0057] The method for manufacturing a molded body for a semiconductor device test socket according to the present invention may include: polymerizing a diamine compound and an acid dianhydride compound to prepare a polyimide resin; and molding the polyimide resin.

[0058] The present invention is characterized in that the imidization polymerization is carried out by slowly heating a solution containing a diamine compound and an acid dianhydride compound, thereby greatly improving the heat resistance, flexural modulus and other mechanical and physical properties of the molded body as well as the surface resistance stability.

[0059] Specifically, the steps for preparing the polyimide resin may include: dissolving a diamine compound in a solvent; providing an acid dianhydride thereto to obtain a solution; subjecting the solution to a primary reaction at a predetermined temperature; and subjecting the product of the primary reaction to a secondary reaction at a temperature higher than that of the primary reaction.

[0060] First, the diamine compound is added to a reactor equipped with a stirrer, temperature control device, and nitrogen injection device, and completely dissolved in a solvent. Then, nitrogen gas is passed through the solution at room temperature while stirring for 30 minutes.

[0061] In this case, the solvent may include a polar solvent. The polar solvent is not particularly limited as long as it is a high-boiling-point organic polar solvent. For example, it may include at least one selected from mixed cresols, mixed xylenes, N-methyl-2-pyrrolidone (NMP), N,N-dimethylformamide (DMF), dimethylacetamide (DMAc), dimethyl sulfoxide (DMSO), diethyl acetate (DEA), and 3-methoxy-N,N-dimethylpropionamide (DMPA).

[0062] After dissolving the diamine compound, it can be heated for 1-2 hours to raise the temperature to 60-80°C, and an acid dianhydride can be introduced to obtain a solution. At this point, the solid content of the solution can be 6-16% by weight or 8-12% by weight.

[0063] Subsequently, the solution can be heated to 90-120°C at a rate of 2-6°C / min and reacted once for 2-3 hours. The product is then heated to 140-180°C at a rate of 2-6°C / min and reacted a second time for 1-2 hours to obtain the polyimide resin. Preferably, the solution is heated to 90-120°C at a rate of 3-5°C / min and reacted once for 2-3 hours. The product is then heated to 160-180°C at a rate of 3-5°C / min and reacted a second time for 1-2 hours to obtain the polyimide resin.

[0064] At this point, a catalyst can be supplied to the solution to enhance the reactivity of the imidization reaction. The catalyst can be used without particular limitation as long as it enhances reactivity within a range that does not violate the purpose of the invention and does not significantly impair the effects. For example, the catalyst can be selected from trimethylamine, xylene, pyridine, quinoline, and combinations thereof. In addition to the catalyst, the invention may also contain any one selected from plasticizers, antioxidants, flame retardants, dispersants, viscosity modifiers, leveling agents, and combinations thereof, which can also be selected and used as needed without significantly impairing the purpose and effects of the invention.

[0065] At the end of the imidization reaction, the polyimide resin is filtered and washed with an organic solvent. The organic solvent used is not particularly limited as long as it is a low-boiling-point organic solvent. For example, it can be acetone, methanol, etc.

[0066] After cleaning the polyimide resin, the cleaned polyimide resin can be subjected to 10... -1 The drying is carried out under a pressure below Torr, a nitrogen atmosphere, and a temperature of 100-250°C. The drying temperature is preferably 160-220°C, and more preferably 170-200°C.

[0067] The dried polyimide resin was heated to 10°C. -1 Up to 10 3 The re-drying is carried out under a pressure of Torr, a nitrogen atmosphere, and a temperature of 250-400°C. The preferred re-drying temperature and pressure are 280-370°C and 10 Torr to 10... 3 The temperature of the container can be 300-350℃ and 10℃. 2 Up to 10 3 Entrust.

[0068] Subsequently, the polyimide resin can be molded into a predetermined shape. Furthermore, the method for manufacturing a molded article according to the present invention may further include a step of calcining the molded polyimide resin. Specifically, the polyimide resin can be compressed under a pressure of 50,000-100,000 psi, and then calcined at a temperature of 300-500°C for 5-15 hours under a nitrogen atmosphere. This allows the manufacture of molded articles with excellent heat resistance and mechanical and physical properties. Alternatively, the compression molding and calcination can be performed simultaneously to manufacture the molded article.

[0069] In addition to being used as a test socket for semiconductor devices, the molded articles according to the present invention can also be used as core heat-resistant components in various cutting-edge industries such as the electrical and electronic industry, the automotive industry, the semiconductor industry, and the aerospace industry.

[0070] The present invention will now be described in more detail through specific embodiments. These embodiments are merely illustrative examples to aid in understanding the invention, and the scope of the invention is not limited thereto.

[0071] Example 1: p-PDA (80%) / m-PDA (20%) + BPDA (50%) / PMDA (50%)

[0072] In a 2-liter reactor equipped with a stirrer, temperature control, and nitrogen injection system, 29.59 g of p-phenylenediamine (p-PDA) and 7.39 g of m-phenylenediamine (m-PDA) were added and dissolved in 672.4 g of N-methyl-2-pyrrolidone (NMP). Then, 448.3 g of mixed xylene was added, followed by nitrogen injection at room temperature. The temperature was slowly increased to 60-80°C over 1-2 hours at room temperature, and 37.31 g of pyromellitic dianhydride (PMDA) and 50.32 g of biphenyltetracarboxylic dianhydride (BPDA) were injected. At this point, the concentration of solids is fixed at 10% by weight, and the reaction is carried out at 60-80℃ for 1-2 hours. The temperature of the reaction solution is then slowly increased to 90-120℃ at a rate of 3℃ / min and stirred for 2-3 hours. The temperature is then increased to 160-180℃ at a rate of 3℃ / min and stirred for 1-2 hours to carry out the imidization reaction. After the reaction, the precipitated polyimide polymer is filtered, washed with 2 liters of acetone, and then subjected to a reaction at 190℃ for 10 hours. -1 The material was dried under vacuum and nitrogen gas for 16 hours. After drying, it was re-dried at 300°C before molding, and then at a temperature of 10... 3 The mixture was dried under a nitrogen gas stream for 8 hours. The intrinsic viscosity of the obtained polyimide resin powder, measured at 30°C with concentrated sulfuric acid at a concentration of 0.2 g / dl as solvent, was 1.7 dl / g, indicating a degree of imidization of 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0073] Example 2: p-PDA (75%) / m-PDA (25%) + BPDA (60%) / PMDA (40%)

[0074] Except that the compositions of the diamine and dianhydride compounds were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Example 2, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0075] Example 3: p-PDA (75%) / m-PDA (25%) + BPDA (50%) / PMDA (50%)

[0076] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide powder according to Example 3, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.8 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0077] Example 4: p-PDA (70%) / m-PDA (30%) + BPDA (60%) / PMDA (40%)

[0078] Except that the compositions of the diamine and dianhydride compounds were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Example 4, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0079] Example 5: p-PDA (70%) / m-PDA (30%) + BPDA (55%) / PMDA (45%)

[0080] Except that the compositions of the diamine and dianhydride compounds were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Example 5, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0081] Example 6: p-PDA (70%) / m-PDA (30%) + BPDA (50%) / PMDA (50%)

[0082] Except that the compositions of the diamine and dianhydride compounds were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Example 6, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0083] Example 7: p-PDA (60%) / m-PDA (40%) + BPDA (50%) / PMDA (50%)

[0084] Except that the compositions of the diamine and dianhydride compounds were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Example 7, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0085] Comparative Example 1

[0086] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 1, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.1 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0087] Comparative Example 2

[0088] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. Specifically, 4,4-diaminodiphenyl ether (ODA) was added to replace m-phenylenediamine (m-PDA) and its content was adjusted, and only biphenyltetracarboxylic acid dianhydride (BPDA) was used as the acid dianhydride compound. For the polyimide resin powder according to Comparative Example 2, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.2 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0089] Comparative Example 3

[0090] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. Specifically, only 4,4-diaminodiphenyl ether (ODA) was used as the diamine compound, and only pyromellitic dianhydride (PMDA) was used as the acid dianhydride compound. For the polyimide resin powder according to Comparative Example 3, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.4 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce a molded article.

[0091] Comparative Example 4

[0092] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 4, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.3 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0093] Comparative Example 5

[0094] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 5, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.9 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0095] Comparative Example 6

[0096] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 6, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0097] Comparative Example 7

[0098] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 7, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.7 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0099] Comparative Example 8

[0100] Except that the compositions of the diamine compound and the acid dianhydride compound were adjusted as shown in Table 1 below, the polyimide resin was prepared by the same method as in Example 1. For the polyimide resin powder according to Comparative Example 8, the intrinsic viscosity measured at 30°C with concentrated sulfuric acid as a solvent at a concentration of 0.2 g / dl was 1.5 dl / g, and the degree of imidization was 99%. The powder was molded under a pressure of 100,000 psi and sintered at 400°C for 11 hours to produce molded articles.

[0101] [Table 1]

[0102]

[0103] The surface resistivity stability was evaluated by performing laser exposure tests on the molded articles according to Examples 1 to 7 and Comparative Examples 1 to 8. Specifically, each molded article was exposed to a laser at an energy intensity of 200 mJ and an exposure frequency of 5 times per second, and its surface resistivity was measured to remain at 1 × 10⁻⁶. 9 Exposure times exceeding Ω / sq. The results are shown in Table 2.

[0104] In addition, the tensile strength, elongation, flexural modulus, and moisture absorption rate of the molded articles according to Examples 1 to 7 and Comparative Examples 1 to 8 were measured using ASTM D1708, ASTM D790, and ASTM D570 as standards. The results are shown in Table 2.

[0105] [Table 2]

[0106]

[0107]

[0108] Referring to Table 2, Comparative Examples 1 and 2 exhibited excellent mechanical and physical properties and moisture absorption rates, but their surface stability was significantly reduced. Furthermore, Comparative Example 3 demonstrated excellent surface stability, but its flexural modulus, Young's modulus, and elongation did not meet the expected levels.

[0109] Furthermore, it is known that the surface stability of Comparative Examples 4 to 8 decreased compared with Examples 1 to 7.

[0110] Therefore, the present invention has discovered a composition for effectively preparing polyimide powders with high flexural modulus, excellent dimensional stability, surface stability to high-density energy, and excellent processability without the use of fillers. Furthermore, the method of the present invention is a novel manufacturing method that is simpler and more economically competitive than the prior art and produces products with excellent physical properties.

[0111] The embodiments of the present invention have been described in detail above. The scope of the present invention is not limited to the above-described embodiments. Various modifications and improvements made by those skilled in the art using the basic concepts of the present invention as defined in the claims also fall within the scope of the present invention.

Claims

1. A molded body for a semiconductor device test socket, comprising a polyimide resin polymerized from a diamine compound and an acid dianhydride compound, in, The surface resistance of the molded body for the semiconductor device test socket is 1×10⁻⁶ when exposed to a laser with an energy of 200-500 mJ for more than 5000 cycles. 9 / sq or above, The diamine compound comprises 60-80% by weight of p-phenylenediamine (p-PDA) and 20-40% by weight of m-phenylenediamine (m-PDA). The acid dianhydride compound comprises 50-60% by weight of biphenyltetracarboxylic dianhydride (BPDA) and 40-50% by weight of pyromellitic dianhydride (PMDA).

2. The molded body for a semiconductor device test socket according to claim 1, wherein, The moisture absorption rate of the molded body for semiconductor device test socket is less than 0.15%.

3. The molded body for a semiconductor device test socket according to claim 1, wherein, The flexural modulus of the molded body used for semiconductor device test sockets is 5000-6000 MPa, the Young's modulus is 3000-4000 MPa, the tensile strength is 100-200 MPa, and the elongation is 4-10%.

4. The molded body for a semiconductor device test socket according to claim 1, characterized in that, The molded body for semiconductor device test sockets does not contain fillers.

5. A method for manufacturing a molded body for a semiconductor device test socket, comprising the following steps: Polymerizing diamine compounds and acid dianhydride compounds to prepare polyimide resins; as well as The polyimide resin is molded. The surface resistance of the molded body for the semiconductor device test socket is 1×10⁻⁶ when exposed to a laser with an energy of 200-500 mJ for more than 5000 cycles. 9 / sq or above, The diamine compound comprises 60-80% by weight of p-phenylenediamine (p-PDA) and 20-40% by weight of m-phenylenediamine (m-PDA). The acid dianhydride compound comprises 50-60% by weight of biphenyltetracarboxylic dianhydride (BPDA) and 40-50% by weight of pyromellitic dianhydride (PMDA).

6. The method for manufacturing a molded body for a semiconductor device test socket according to claim 5, wherein, The moisture absorption rate of the molded body for semiconductor device test socket is less than 0.15%.

7. The method for manufacturing a molded body for a semiconductor device test socket according to claim 5, wherein, The flexural modulus of the molded body used for semiconductor device test sockets is 5000-6000 MPa, the Young's modulus is 3000-4000 MPa, the tensile strength is 100-200 MPa, and the elongation is 4-10%.

8. The method for manufacturing a molded body for a semiconductor device test socket according to claim 5, wherein, The steps for preparing the polyimide resin include the following: The solution containing the diamine compound and the acid dianhydride compound is heated to a temperature of 90-120°C at a rate of 2-6°C / min to carry out a single reaction; and The product is heated to 140-180°C at a rate of 2-6°C / min to carry out a secondary reaction.

9. The method for manufacturing a molded body for a semiconductor device test socket according to claim 5, characterized in that, The polyimide resin does not contain fillers.

10. The method for manufacturing a molded body for a semiconductor device test socket according to claim 5, wherein, The method for manufacturing a molded body for a semiconductor device test socket further includes a step of calcining the molded polyimide resin.

11. The method of manufacturing a molded body for a semiconductor device test socket according to claim 10, wherein, The molded polyimide resin is calcined at 300-500℃ for 5-15 hours under a nitrogen atmosphere.

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