Electronic device with photoelectric conversion layer

Abstract

The present application provides an electronic device with a photoelectric conversion layer, which includes a substrate, an organic insulating layer, a first metal layer, and a flexible circuit board. The substrate is provided with an operation area and a bonding area on one side of the operation area. The organic insulating layer is arranged on the substrate and overlaps the bonding area. The first metal layer is arranged on the organic insulating layer and contacts the organic insulating layer. The first metal layer is provided with a hollow pattern between the bonding area and the operation area. The flexible circuit board is electrically connected to a part of the first metal layer in the bonding area.

Description

Technical Field

[0001] This invention relates to an electronic device, and more particularly to an electronic device having a flexible circuit board bonded to it and having a photoelectric conversion layer. Background Technology

[0002] Most electronic devices use circuit boards to drive and control their components. However, when the conductive metal layer used to bond the circuit board is distributed across the entire bonding area, the conductive metal layer can easily bulge due to thermal expansion during the thermo-press bonding process, resulting in poor appearance and even affecting subsequent reliability testing. Summary of the Invention

[0003] This invention relates to an electronic device with a photoelectric conversion layer, which has better reliability in electrical operation.

[0004] According to an embodiment of the present invention, an electronic device having a photoelectric conversion layer includes a substrate, an organic insulating layer, a first metal layer, and a flexible circuit board. The substrate has an operating area and a bonding area located on one side of the operating area. The organic insulating layer is disposed on the substrate and overlaps the bonding area. The first metal layer is disposed on the organic insulating layer and contacts the organic insulating layer. The first metal layer has a perforated pattern between the bonding area and the operating area. The flexible circuit board is electrically bonded to a portion of the first metal layer located in the bonding area.

[0005] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the shortest distance between the orthographic projection of the cutout pattern on the substrate and the bonding area is between 0.1 mm and 5 mm.

[0006] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the shortest distance is greater than or equal to 0.2 mm.

[0007] In an electronic device having a photoelectric conversion layer according to an embodiment of the present invention, the material of the organic insulating layer includes pentane, diethylene glycol dimethyl ether or polyimide, and the material of the first metal layer includes molybdenum, aluminum, silver, gold or copper.

[0008] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, an operating area and a bonding area are arranged along a first direction. A perforated pattern extends in a second direction. The second direction is perpendicular to the first direction. The perforated pattern and the bonding area have a first width and a second width respectively along the second direction, and the first width is greater than the second width.

[0009] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the cutout pattern is a cutout opening. The orthographic projection outline of the cutout opening on the substrate is a straight line. The cutout opening has a cutout width and a first width along a first direction and a second direction, respectively. The cutout width is greater than or equal to 3 micrometers and less than the first width.

[0010] In an electronic device having a photoelectric conversion layer according to an embodiment of the present invention, the perforation pattern is a plurality of perforated openings arranged along a first direction or a second direction and separated from each other.

[0011] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the shortest distance between any two adjacent perforated openings along a first direction or a second direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0012] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the width of each cutout opening along a first direction or a second direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0013] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the shortest distance between any two adjacent perforated openings along a third direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters. The third direction intersects the first and second directions. The width of each perforated opening along the third direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0014] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the perforation pattern consists of a plurality of perforated openings. These perforated openings are arranged along a first direction and a second direction, respectively. The shortest distance between any two adjacent perforated openings arranged along the first direction and the shortest distance between any two adjacent perforated openings arranged along the second direction are greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0015] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the perforation pattern consists of a plurality of perforated openings. These perforated openings are arranged along a third direction and a fourth direction, respectively. The first direction, the second direction, the third direction, and the fourth direction intersect each other. The shortest distance between any two adjacent perforated openings arranged along the third direction and the shortest distance between any two adjacent perforated openings arranged along the fourth direction are greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0016] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the width of each of the partial cutout openings along a third or fourth direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0017] In an electronic device having a photoelectric conversion layer according to an embodiment of the present invention, the perforated pattern also extends to opposite sides of the bonding area in a second direction.

[0018] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the electronic device with a photoelectric conversion layer further includes a transparent conductive layer, a second metal layer, and a photoelectric conversion layer. The transparent conductive layer is disposed between an organic insulating layer and a substrate. The second metal layer is disposed between the organic insulating layer and the transparent conductive layer. The photoelectric conversion layer is disposed between the transparent conductive layer and the second metal layer. The transparent conductive layer, the second metal layer, and the photoelectric conversion layer overlap in an operating area. The first metal layer has a first electrode and a second electrode. The first electrode is electrically connected to the transparent conductive layer, and the second electrode is electrically connected to the second metal layer.

[0019] In an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, the substrate is further provided with a placeable area for setting a hollow pattern in the bonding area and the operating area, and the percentage of the orthogonal projection area of ​​the hollow pattern on the substrate to the area of ​​the placeable area is between 3% and 30%.

[0020] Based on the above, in an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, an organic insulating layer and a metal layer that are stacked and in contact with each other extend from one side of the operating area to the bonding area, and the portion of the metal layer located in the bonding area is used for electrical bonding with a flexible circuit board. When the flexible circuit board and the metal layer are thermo-pressed together, since the metal layer has a perforated pattern between the bonding area and the operating area, the metal layer can avoid bulging from the surface of the organic insulating layer due to thermal expansion, which helps to improve the reliability of the electronic device with the photoelectric conversion layer in electrical operation. Attached Figure Description

[0021] Figure 1 This is a top view schematic diagram of an electronic device having a photoelectric conversion layer according to a first embodiment of the present invention; Figure 2 and Figure 3 yes Figure 1 A cross-sectional schematic diagram of an electronic device with a photoelectric conversion layer at two different locations; Figure 4 yes Figure 1 An enlarged schematic diagram of a local area of ​​an electronic device with a photoelectric conversion layer; Figures 5A to 5D yes Figure 4 Top view schematic diagram of some other modified embodiments of an electronic device having a photoelectric conversion layer; Figure 6 This is a cross-sectional schematic diagram of an electronic device having a photoelectric conversion layer according to a second embodiment of the present invention.

[0022] Explanation of reference numerals in the attached figures 10, 10A, 10B, 10C, 10D, 10E: Electronic devices with photoelectric conversion layers; 100: substrate; 110, 110A: Transparent conductive layer; 120, 120A: Photoelectric conversion layer; 130, 150, 150A, 150B, 150C, 150D: Metal layers; 140: Organic insulating layer; 140op1, 140op2: Openings; 151: First electrode; 152: Second electrode; 155, 155A, 155B, 155C, 155D: Hollow-out patterns; 155op, 155op-B, 155op-C, 155op-D: Openwork design; 200: Flexible circuit board; BA: Junction area; d, d1, d2, d3, d5: Distance; OA: Operation Area; PA: Placement area; w1, w2, w3, w5: Width; w4: Width of the cutout; W1”, W3”: First width; W2”: Second width; X, Y, Z, X”, Y”: direction; A-A', B-B': section line. Detailed Implementation

[0023] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.

[0024] The foregoing descriptions and other technical contents, features, and effects of this invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the accompanying drawings. The directional terms used in the following embodiments, such as up, down, left, right, front, or back, are merely for reference to the accompanying drawings. Therefore, the directional terms used are for illustrative purposes and not for limiting the invention.

[0025] Figure 1 This is a top view schematic diagram of an electronic device having a photoelectric conversion layer according to a first embodiment of the present invention. Figure 2 and Figure 3 yes Figure 1 A cross-sectional schematic diagram of an electronic device with a photoelectric conversion layer at two different locations. Figure 4 yes Figure 1An enlarged schematic diagram of a portion of an electronic device with a photoelectric conversion layer. It should be noted that, for clarity, Figure 1 Omitted Figure 2 The transparent conductive layer 110 and the photoelectric conversion layer 120 are shown. Figure 2 and Figure 3 Corresponding to Figure 1 At section lines A-A' and B-B' in the diagram.

[0026] Please refer to Figure 1 and Figure 2 The substrate 100 of the electronic device 10 with a photoelectric conversion layer has an operation area OA and a bonding area BA located on one side of the operation area OA. For example, the bonding area BA of the electronic device 10 with a photoelectric conversion layer may be provided in... Figure 1 The operating area OA is located below and near the edge of the substrate 100, but is not limited thereto. The substrate 100 may be made of glass, quartz, polymer materials (e.g., polyimide, polycarbonate), or other suitable substrate materials.

[0027] In this embodiment, the electronic device 10 with the photoelectric conversion layer is, for example, a thin-film solar cell, and the operating area OA is adapted to receive ambient light (e.g., sunlight) from the outside and convert the received light energy into electrical energy. For example, the electronic device 10 with the photoelectric conversion layer in this embodiment can be mounted on a wearable or portable display device (e.g., a smartwatch, a smart writing tablet, or a tablet computer) to provide the power required for the operation of these display devices.

[0028] Therefore, the electronic device 10 with a photoelectric conversion layer may further include a transparent conductive layer 110, a photoelectric conversion layer 120, a metal layer 130 (i.e., a second metal layer), an organic insulating layer 140, and a metal layer 150 (i.e., a first metal layer). The organic insulating layer 140 is disposed between the metal layer 150 and the substrate 100, overlapping the bonding region BA of the substrate 100, and the metal layer 150 contacts the organic insulating layer 140. The transparent conductive layer 110 is disposed between the organic insulating layer 140 and the substrate 100. The metal layer 130 is disposed between the transparent conductive layer 110 and the organic insulating layer 140. The photoelectric conversion layer 120 is disposed between the transparent conductive layer 110 and the metal layer 130.

[0029] More specifically, the transparent conductive layer 110 and the metal layer 130 are disposed on opposite sides of the photoelectric conversion layer 120 and are electrically connected to the photoelectric conversion layer 120. When the photoelectric conversion layer 120 receives external light, it generates a current, which is transmitted to the energy storage element or the electronic element to be operated via the loop formed by the transparent conductive layer 110 and the metal layer 130. Therefore, the transparent conductive layer 110, the photoelectric conversion layer 120, and the metal layer 130 are at least distributed in the operating area OA of the electronic device 10 having the photoelectric conversion layer. In this embodiment, the transparent conductive layer 110, the photoelectric conversion layer 120, and the metal layer 130 may optionally extend to areas outside the operating area OA, wherein the transparent conductive layer 110 and the photoelectric conversion layer 120 extend to the bonding area BA, but are not limited thereto.

[0030] For example, in this embodiment, the electronic device 10 with a photoelectric conversion layer is adapted to receive external light from the side of the substrate 100 facing away from the photoelectric conversion layer 120. Therefore, the transparent conductive layer 110 is disposed between the substrate 100 and the photoelectric conversion layer 120, while the metal layer 130, serving as a reflective electrode, is disposed on the side of the photoelectric conversion layer 120 facing away from the substrate 100. The transparent conductive layer 110 is made of metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, or other suitable oxides, or a stack of at least two of the above. The metal layer 130 is made of aluminum, silver, chromium, the above alloys, combinations thereof, or other metal materials with high reflectivity. The thickness of the transparent conductive layer 110 and the metal layer 130 along the Z direction can be between 0.05 micrometers and 5 micrometers.

[0031] The photoelectric conversion layer 120 may be made of amorphous silicon (a-Si), but is not limited thereto. In other embodiments, the photoelectric conversion layer 120 may also be made of monocrystalline silicon, polycrystalline silicon, copper indium gallium selenide, cadmium antimonide, or a combination thereof. For example, the photoelectric conversion layer 120 may be a stack of a first intrinsic semiconductor layer (not shown), an intrinsic semiconductor layer (not shown), and a second intrinsic semiconductor layer (not shown). The first intrinsic semiconductor layer has a first doping type, the second intrinsic semiconductor layer has a second doping type, and the first doping type and the second doping type are respectively P-type and N-type. The thickness of the photoelectric conversion layer 120 along the Z direction may be between 0.05 micrometers and 5 micrometers.

[0032] In this embodiment, the metal layer 150 disposed on the organic insulating layer 140 has a first electrode 151 and a second electrode 152 that are electrically separated from each other. The first electrode 151 can be electrically connected to the transparent conductive layer 110 via an opening 140op1 in the organic insulating layer 140 (e.g., Figure 3(As shown). The second electrode 152 can be electrically connected to the metal layer 130 via another opening 140op2 of the organic insulating layer 140 (as shown). Figure 2 (As shown). That is to say, the first electrode 151 and the second electrode 152 can be two electrodes with opposite polarities.

[0033] In order to allow the photocurrent generated by the photoelectric conversion layer 120 to be transmitted to an external device or component via the first electrode 151 and the second electrode 152, a flexible circuit board 200 is also bonded to a portion of the bonding region BA of the metal layer 150 of the electronic device 10 having the photoelectric conversion layer. Specifically, the flexible circuit board 200 is electrically bonded to the two portions of the bonding region BA where the first electrode 151 and the second electrode 152 (i.e., the metal layer 150) are located.

[0034] During the bonding process of the flexible circuit board 200 to the metal layer 150, to prevent the metal layer 150 from warping and bulging from the surface of the organic insulating layer 140 due to the different degrees of thermal expansion between the hot-pressed metal layer 150 and the underlying connected organic insulating layer 140, a perforated pattern 155 is provided on the metal layer 150 between the bonding area BA and the operating area OA. In this embodiment, the material of the organic insulating layer 140 may include pentacene, diethylene glycol dimethyl ether (DEDM), or polyimide, and the material of the metal layer 150 may include molybdenum, aluminum, silver, gold, or copper. The film thickness of the organic insulating layer 140 is between 0.25 micrometers and 25 micrometers, while the film thickness of the metal layer 150 is between 0.05 micrometers and 5 micrometers, wherein the film thickness is defined, for example, as the thickness of the film along the Z direction.

[0035] Please refer to the following at the same time Figure 4 For example, in this embodiment, the operating area OA and the mating area BA can be arranged along the Y direction, while the cutout pattern 155 disposed between the operating area OA and the mating area BA extends along the X direction. The X direction may optionally be perpendicular to the Y direction. In this embodiment, the cutout pattern 155 may also optionally extend to the opposite sides of the mating area BA in the X direction, but is not limited thereto.

[0036] Specifically, the shortest distance (e.g., a distance d along the Y direction) between the orthographic projection of the cutout pattern 155 on the substrate 100 and the bonding area BA can be between 0.1 mm and 5 mm. Preferably, the shortest distance is greater than or equal to 0.2 mm. More specifically, the substrate 100 also provides a placement area PA for setting the cutout pattern 155 between the bonding area BA and the operating area OA. Preferably, the percentage of the orthographic projection area of ​​the cutout pattern 155 on the substrate 100 to the area of ​​the placement area PA is between 3% and 30%. If the percentage is less than 3%, the effect of preventing thermal expansion is not good; if it is greater than 30%, it will affect the conductivity of the metal layer 150 in the placement area PA.

[0037] On the other hand, the cutout pattern 155 and the bonding area BA have a first width W1” and a second width W2” respectively along the direction X, and the first width W1” is greater than the second width W2”. It should be noted that the bonding area BA here may be defined by the bonding range of the bonding pins (not shown) on the flexible circuit board 200, but is not limited thereto. For example, in some embodiments, the bonding area BA may also be defined by the distribution range of the bonding pads provided on the metal layer 150.

[0038] In this embodiment, the cutout pattern 155 consists of multiple cutout openings 155op that are separated from each other, and the orthographic projection outline of each of these cutout openings 155op on the substrate 100 is rectangular. These cutout openings 155op are arranged not only along direction X between the operating area OA and the bonding area BA, but also along direction Y on opposite sides of the bonding area BA in direction X. The cutout openings 155op have widths w1 and w2 along directions X and Y, respectively. Any two adjacent cutout openings 155op arranged along direction X (or direction Y) have a shortest distance between them, for example, a distance d1 along direction X. Preferably, the widths w1 and w2 of the cutout openings 155op, and the distance d1 between any two adjacent cutout openings 155op are greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0039] By setting the aforementioned hollow pattern 155, the metal layer 150 can be prevented from bulging from the surface of the organic insulating layer 140 due to thermal expansion during the thermal bonding process of the flexible circuit board 200, which helps to improve the reliability of the electronic device 10 with the photoelectric conversion layer in electrical operation.

[0040] Other embodiments will be listed below to illustrate this disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted. For the omitted parts, please refer to the foregoing embodiments, and they will not be repeated below.

[0041] Figures 5A to 5D yes Figure 4A top view schematic diagram of some other modified embodiments of an electronic device having a photoelectric conversion layer. Please refer to... Figure 5A The electronic device 10A with a photoelectric conversion layer in this embodiment and Figure 4 The only difference between the electronic device 10 with the photoelectric conversion layer and the other device is the arrangement of the perforated pattern. Specifically, the multiple perforated openings 155op of the metal layer 150A of the electronic device 10A with the photoelectric conversion layer can be arranged in multiple rows along the X direction (or the Y direction), for example, two rows. That is, the orthogonal projection of the perforated pattern 155A on the substrate 100 in this embodiment presents a grid pattern. In this embodiment, in addition to the preferred ranges of width w1, width w2 and distance d1 defined in the aforementioned embodiments, the distance d2 (i.e., the shortest distance) between the two rows of perforated openings 155op arranged along the X direction is also greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0042] Please refer to Figure 5B The electronic device 10B with a photoelectric conversion layer in this embodiment and Figure 4 The only difference between the electronic device 10 with the photoelectric conversion layer and the other device is the configuration of the cutout pattern. Specifically, the orthographic projection of the cutout opening 155op-B of the metal layer 150B of the electronic device 10B with the photoelectric conversion layer onto the substrate 100 is a parallelogram. That is, the orthographic projection of the cutout pattern 155B onto the substrate 100 in this embodiment presents a slanted window pattern. Preferably, the shortest distance between any two adjacent cutout openings 155op-B, for example, the distance d3 along the direction X”, is greater than or equal to 3 micrometers and less than or equal to 3 millimeters, where the direction X” intersects the directions X and Y. The width w3 of the cutout opening 155op-B along the direction X” is also greater than or equal to 3 micrometers and less than or equal to 3 millimeters. It is particularly noteworthy that, in this embodiment, the cutout opening 155op-B provided on the first electrode 151 and the cutout opening 155op-B provided on the second electrode 152 are parallelograms. Figure 5B They are arranged in a mirror image in the horizontal direction, but this is not a limitation.

[0043] Please refer to Figure 5C The electronic device 10C with a photoelectric conversion layer in this embodiment and Figure 4The only difference between the electronic device 10 with the photoelectric conversion layer and the other device is the distribution and configuration of the cutout pattern. In this embodiment, the cutout pattern 155C of the metal layer 150C of the electronic device 10C with the photoelectric conversion layer does not extend to the opposite sides of the flexible circuit board 200 in the X direction. Furthermore, the cutout pattern 155C is a cutout opening 155op-C, and this cutout opening 155op-C extends from one side of the flexible circuit board 200 to the other side. That is, the orthographic projection outline of the cutout opening 155op-C on the substrate 100 in this embodiment is a straight line. The first width W3” of the cutout opening 155op-C (i.e., the cutout pattern 155C) along the X direction is greater than the second width W2” of the flexible circuit board 200 along the X direction. Preferably, the cutout width w4 of the cutout opening 155op-C along the Y direction is greater than or equal to 3 micrometers and less than or equal to the first width W3.

[0044] Please refer to Figure 5D The electronic device 10D with a photoelectric conversion layer in this embodiment and Figure 5B The only difference between the electronic device 10B with the photoelectric conversion layer and the other device 10D is the configuration of the cutout pattern. In this embodiment, the orthogonal projection outline of the cutout pattern 155D of the metal layer 150D of the electronic device 10D with the photoelectric conversion layer on the substrate 100 presents a grid-like pattern. Specifically, the plurality of cutout openings 155op-D of the cutout pattern 155D are arranged along the direction X” and the direction Y”, respectively, wherein the directions X”, Y”, X and Y intersect each other. Preferably, the shortest distance between any two adjacent cutout openings 155op-D arranged along the direction X” (e.g., the distance d3 along the direction X”), the shortest distance between any two adjacent cutout openings 155op-D arranged along the direction Y” (e.g., the distance d5 along the direction Y”), and the widths w3 and w5 of some of the cutout openings 155op-D along the directions X” and Y”, respectively, are all greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

[0045] Figure 6 This is a cross-sectional schematic diagram of an electronic device having a photoelectric conversion layer according to a second embodiment of the present invention. Please refer to... Figure 6 The electronic device 10E with a photoelectric conversion layer in this embodiment and Figure 2 The only difference between the electronic device 10 with the photoelectric conversion layer is the film structure of the bonding region. For example, in this embodiment, the bonding region BA is only provided with an organic insulating layer 140 and a metal layer 150. That is, the transparent conductive layer 110A and the photoelectric conversion layer 120A do not extend to the bonding region BA, and do not overlap with the cutout pattern 155 of the metal layer 150 along the Z direction.

[0046] It should be understood that although the electronic device with a photoelectric conversion layer disclosed herein is illustrated by way of a thin-film solar cell, it does not imply that the invention is limited thereto. For example, the technical solution of the present invention can be applied to any electronic device that requires bonding a circuit board and has a photoelectric conversion layer, and its bonding area is provided with at least the stacked structure of the above-mentioned organic insulating layer 140 and metal layer 150.

[0047] In summary, in an electronic device with a photoelectric conversion layer according to an embodiment of the present invention, an organic insulating layer and a metal layer, which are stacked and in contact with each other, extend from one side of the operating area to the bonding area, and the portion of the metal layer located in the bonding area is used for electrical bonding with a flexible circuit board. When the flexible circuit board and the metal layer are thermo-pressed together, since the metal layer has a perforated pattern between the bonding area and the operating area, the metal layer can avoid bulging from the surface of the organic insulating layer due to thermal expansion, which helps to improve the reliability of the electronic device with the photoelectric conversion layer in electrical operation.

[0048] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An electronic device having a photoelectric conversion layer, characterized by comprising: include: The substrate has an operating area and a bonding area located on one side of the operating area; An organic insulating layer is disposed on the substrate and overlaps the bonding area; A first metal layer is disposed on the organic insulating layer and in contact with the organic insulating layer, wherein the first metal layer has a hollow pattern between the bonding area and the operating area; A transparent conductive layer is disposed between the organic insulating layer and the substrate; A second metal layer is disposed between the organic insulating layer and the transparent conductive layer; A photoelectric conversion layer is disposed between the transparent conductive layer and the second metal layer, wherein the transparent conductive layer, the second metal layer, and the photoelectric conversion layer overlap the operating area, and the first metal layer has a first electrode and a second electrode, wherein the first electrode is electrically connected to the transparent conductive layer, and the second electrode is electrically connected to the second metal layer. as well as A flexible circuit board is electrically bonded to a portion of the first metal layer in the bonding area, wherein the cutout pattern does not overlap the flexible circuit board and the bonding area.

2. The electronic device with a photoelectric conversion layer according to claim 1, characterized in that, The shortest distance between the orthographic projection of the cutout pattern on the substrate and the bonding area is between 0.1 mm and 5 mm.

3. The electronic device with a photoelectric conversion layer according to claim 2, characterized in that, The shortest distance is greater than or equal to 0.2 mm.

4. The electronic device with a photoelectric conversion layer according to claim 1, characterized in that, The organic insulating layer is made of pentane, diethylene glycol dimethyl ether, or polyimide, and the first metal layer is made of molybdenum, aluminum, silver, gold, or copper.

5. The electronic device with a photoelectric conversion layer according to claim 1, characterized in that, The operating area and the joining area are arranged along a first direction, the hollow pattern extends in a second direction, the second direction is perpendicular to the first direction, the hollow pattern and the joining area have a first width and a second width respectively along the second direction, and the first width is greater than the second width.

6. The electronic device with a photoelectric conversion layer according to claim 5, characterized in that, The hollow pattern is a hollow opening, and the orthographic projection outline of the hollow opening on the substrate is a straight line. The hollow opening has a hollow width and a first width along the first direction and the second direction, respectively. The hollow width is greater than or equal to 3 micrometers and less than the first width.

7. The electronic device with a photoelectric conversion layer according to claim 5, characterized in that, The hollow pattern consists of multiple hollow openings arranged along the first direction or the second direction and separated from each other.

8. The electronic device having a photoelectric conversion layer according to claim 7, characterized in that, The shortest distance between any two adjacent openings along the first or second direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

9. The electronic device having a photoelectric conversion layer according to claim 7, characterized in that, The width of each of the plurality of hollow openings along the first direction or the second direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

10. The electronic device having a photoelectric conversion layer according to claim 7, characterized in that, The shortest distance between any two adjacent cutouts along a third direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters, the third direction intersects the first direction and the second direction, and the width of each of the plurality of cutouts along the third direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

11. The electronic device having a photoelectric conversion layer according to claim 5, characterized in that, The hollow pattern consists of multiple hollow openings, which are arranged along the first direction and the second direction, respectively. The shortest distance between any two adjacent hollow openings arranged along the first direction and the shortest distance between any two adjacent hollow openings arranged along the second direction are greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

12. The electronic device having a photoelectric conversion layer according to claim 5, characterized in that, The hollow pattern consists of multiple hollow openings, which are arranged along a third direction and a fourth direction, respectively. The first direction, the second direction, the third direction, and the fourth direction intersect each other. The shortest distance between any two adjacent hollow openings arranged along the third direction and the shortest distance between any two adjacent hollow openings arranged along the fourth direction are greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

13. The electronic device having a photoelectric conversion layer according to claim 12, characterized in that, The width of each of the plurality of hollow openings along the third or fourth direction is greater than or equal to 3 micrometers and less than or equal to 3 millimeters.

14. The electronic device having a photoelectric conversion layer according to claim 5, characterized in that, The openwork pattern also extends to the opposite sides of the joining area in the second direction.

15. The electronic device having a photoelectric conversion layer according to claim 1, characterized in that, The substrate is further provided with a placeable area for setting the hollow pattern in the bonding area and the operation area, and the percentage of the orthogonal projection area of ​​the hollow pattern on the substrate to the area of ​​the placeable area is between 3% and 30%.

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