RF front-end module

Abstract

This application discloses a radio frequency (RF) front-end module, which includes a switching module and a tuning module connected in series with the switching module. The tuning module has a first port and a second port. The first port is connected to the switching module, and the second port is used to output the RF signal after harmonic suppression by the tuning module. The tuning module is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input through the first port. Therefore, when an RF signal is input through the first port, the tuning module can generate a second signal with a phase opposite to the harmonic signal in the RF signal to cancel the harmonic signal. Since the second signal has a wide frequency range, for example, it can cover the entire Sub-3GHz band, thus canceling wide-frequency harmonic signals and achieving broadband suppression.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module. Background Technology

[0002] With the continuous development of radio frequency technology, the harmonic suppression capability of radio frequency front-end modules has become an important standard for measuring the hardware performance of radio frequency front-end modules.

[0003] In existing RF front-end modules, filter circuits composed of capacitors and inductors (e.g., LC resonant circuits) are typically used to suppress harmonic signals at a specified frequency. However, the above-mentioned filter circuits provide narrowband suppression and cannot achieve good broadband suppression. Summary of the Invention

[0004] This application provides a radio frequency front-end module.

[0005] According to a first aspect of this application, an embodiment of this application provides a radio frequency (RF) front-end module, which includes a switching module and a tuning module connected in series with the switching module. The tuning module has a first port and a second port. The first port is connected to the switching module, and the second port is used to output an RF signal after harmonic suppression by the tuning module. The tuning module is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input from the first port.

[0006] This application provides a radio frequency (RF) front-end module, which includes a switching module and a tuning module connected in series. A first port of the tuning module is connected to the switching module, and a second port is used to output the RF signal after harmonic suppression by the tuning module. When an RF signal is input to the first port, the tuning module can generate a second signal with a phase opposite to the harmonic signals in the RF signal to cancel the harmonic signals. Because the second signal has a wide frequency range, for example, it can cover the entire Sub-3 GHz band, thus canceling wide-frequency harmonic signals and achieving broadband suppression.

[0007] According to a second aspect of this application, embodiments of this application also provide a radio frequency (RF) front-end module, which includes a substrate and a designated chip. The designated chip is disposed on the substrate and integrates a switching module and a tuning module connected in series with the switching module. The tuning module has a first port and a second port. The first port is connected to the switching module, and the second port is used to output an RF signal after harmonic suppression by the tuning module. The tuning module is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input from the first port.

[0008] This application also provides a radio frequency (RF) front-end module, which includes a substrate and a designated chip disposed on the substrate. The designated chip integrates a switching module and a tuning module connected in series. A first port of the tuning module is connected to the switching module, and a second port is used to output the RF signal after harmonic suppression by the tuning module.

[0009] When an RF signal is input to the first port, the tuning module can generate a second signal with the opposite phase to the harmonic signals in the RF signal to cancel the harmonic signals. Because the second signal has a wide frequency range, for example, it can cover the entire Sub-3 GHz band, thus canceling wide-frequency harmonic signals and achieving broadband suppression.

[0010] Furthermore, since the switching module and tuning module are integrated into the same chip (i.e., a designated chip), the integration density of the RF front-end module can be improved. In addition, because the tuning module can achieve harmonic suppression, there is no need for additional LC resonant circuitry (e.g., surface-mount capacitors), thus eliminating the need for external suppression circuitry. On the one hand, this allows the tuning module to suppress harmonic signals with a wider frequency range (e.g., harmonic signals with a bandwidth of 900MHz to 2600MHz); on the other hand, it allows the tuning module to suppress harmonic signals in higher-power RF signals, for example, the power of the RF signal input to the switching module can be greater than or equal to 30dBm. Attached Figure Description

[0011] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0012] Figure 1 This is a schematic diagram of a radio frequency front-end module provided in an embodiment of this application.

[0013] Figure 2 yes Figure 1 A schematic diagram of a tuning module.

[0014] Figure 3 yes Figure 2 The diagram shows the first structural design of the tuning module.

[0015] Figure 4 yes Figure 2 The diagram shows the second structural design of the tuning module.

[0016] Figure 5 yes Figure 2The diagram shows the third structure of the tuning module.

[0017] Figure 6 yes Figure 2 The diagram shows the fourth structure of the tuning module.

[0018] Figure 7 yes Figure 2 The diagram shows the fifth structural design of the tuning module.

[0019] Figure 8 yes Figure 1 Another structural diagram of the tuning module.

[0020] Figure 9 yes Figure 8 The diagram shows the first structural design of the tuning module.

[0021] Figure 10 yes Figure 8 The diagram shows the second structural design of the tuning module.

[0022] Figure 11 yes Figure 8 The diagram shows the third structure of the tuning module.

[0023] Figure 12 yes Figure 1 Another structural diagram of the tuning module.

[0024] Figure 13 yes Figure 12 The diagram shows a structural schematic of a tuning module.

[0025] Figure 14 yes Figure 12 The diagram shows another structural schematic of the tuning module.

[0026] Figure 15 This is another structural schematic diagram of the radio frequency front-end module provided in the embodiments of this application.

[0027] Figure 16 This is another structural schematic diagram of the radio frequency front-end module provided in the embodiments of this application. Detailed Implementation

[0028] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0029] This application provides a radio frequency (RF) front-end module 100, which integrates two or more discrete components such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into a single independent module, thereby improving integration and hardware performance while miniaturizing the size. Specifically, the RF front-end module 100 can be applied to 4G and 5G communication devices such as smartphones, tablets, and smartwatches.

[0030] Please see Figure 1 The RF front-end module 100 in this embodiment may include a switch module 10 and a tuning module 20 connected in series with the switch module 10. The tuning module 20 has a first port 210 and a second port 230. The first port 210 is connected to the switch module 10, and the second port 230 is used to output the RF signal after harmonic suppression via the tuning module 20. The tuning module 20 is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input through the first port 210.

[0031] When a radio frequency signal is input to the first port 210, the tuning module 20 can generate a second signal that is out of phase with the harmonic signals in the radio frequency signal to cancel the harmonic signals. Since the second signal has a wide frequency range, for example, the second signal can cover the entire Sub-3 GHz frequency band, the second signal can cancel wide-frequency harmonic signals and achieve broadband suppression.

[0032] Furthermore, compared to an RF front-end module that requires multiple LC resonant circuits to achieve broadband suppression, the RF front-end module 100 in this embodiment only needs to set one tuning module 20 to achieve the effect of broadband suppression, thereby saving hardware costs and layout space of the RF front-end module 100, which is conducive to the miniaturization design of the RF front-end module 100.

[0033] It should be noted that in this embodiment, the absolute value of the phase difference between the second signal generated by the tuning module 20 and the harmonic signal in the radio frequency signal is greater than or equal to 170 degrees and less than or equal to 190 degrees. It is easy to understand that, ideally, this phase difference is equal to 180 degrees or -180 degrees. Therefore, the phase of the second signal is opposite to the phase of the harmonic signal in the radio frequency signal, thus canceling out the harmonic signal and suppressing it.

[0034] The following is a detailed introduction to each unit in the RF front-end module 100.

[0035] In this embodiment, the switch module 10 can be any switch module in the RF front-end module. For example, the switch module 10 can be an antenna switch at the antenna port of an electronic device (e.g., a smartphone), or it can be a frequency band selection switch, which can be connected between the power amplifier (PA) module and the tuning module 20. When the RF signal output by the power amplifier module is applied to the frequency band selection switch, the frequency band selection switch itself will generate harmonic signals, thereby affecting the linearity of the RF signal.

[0036] The tuning module 20 and the switching module 10 are connected in series and are used to suppress harmonic signals in the radio frequency signal. Specifically, when the harmonic signal generated by the switching module 10 itself is input into the tuning module 20 through the first port 210, the tuning module 20 can generate a second signal with the opposite phase to the harmonic signal, thereby canceling the harmonic signal and suppressing the harmonic signal, thus ensuring the linearity of the radio frequency signal.

[0037] In some possible embodiments, please refer to Figure 2 The tuning module 20 may also have a control port 250, which is configured to input a bias control signal. For example, the bias control signal may be a bias voltage, which may be greater than or equal to 2.5V and less than or equal to 3V.

[0038] Specifically, the tuning module 20 may include a first transistor 211, a second transistor 212, and a first resistor unit 213. The first signal terminal 2110 of the first transistor 211 is connected to the first port 210, the second signal terminal 2112 of the first transistor 211 is connected to the second signal terminal 2122 of the second transistor 212, and the first signal terminal 2120 of the second transistor 212 is connected to the second port 230. One end of the first resistor unit 213 is connected to the control port 250, and the other end of the first resistor unit 213 is connected to the common terminal of the first transistor 211 and the second transistor 212.

[0039] Therefore, when the bias control signal is applied to the first transistor 211 and the second transistor 212 through the first resistor unit 213, the first transistor 211 and the second transistor 212 can be equivalent to a capacitor with adjustable capacitance. This equivalent capacitor and the first resistor unit 213 resonate to generate the second signal mentioned above.

[0040] exist Figure 2In the illustrated embodiment, the equivalent resistance value of the first resistor unit 213 is greater than or equal to 1 kiloohm. Therefore, the first resistor unit 213 can be considered as a large resistor, thereby preventing the RF signal input from the first port 210 from leaking through the control port 250 and causing nonlinear distortion of the signal, thus ensuring the normal transmission of the RF signal. Specifically, the first resistor unit 213 can be a single resistor, one end of which is connected to the control port 250, and the other end is connected to the common terminal of the first transistor 211 and the second transistor 212. The resistance value of this resistor is greater than or equal to 1 kiloohm, for example, 2 kiloohms, 5 kiloohms, etc. In some other possible embodiments, the first resistor unit 213 may include multiple resistors, with one end of the multiple resistors connected in series or parallel to the control port 250, and the other end connected to the common terminal of the first transistor 211 and the second transistor 212. This embodiment does not specifically limit the specific implementation of the first resistor unit 213.

[0041] In some possible embodiments, the first transistor 211 and the second transistor 212 have the same parameters. Here, "parameters" can include the transistor type, model, hardware parameters (e.g., current amplification gain), etc. In other possible embodiments, the first transistor 211 and the second transistor 212 have the same dimensions. Here, "dimensionality" can be understood as the transistor's package size (e.g., transistor length, aspect ratio, etc.). Therefore, in this embodiment, the first transistor 211 and the second transistor 212 are two identical transistors, giving the tuning module 20 better symmetry. Thus, when the tuning module 20 is used in the RF front-end module 100, even if the tuning module 20 is reverse-connected, it will not affect the normal operation of the tuning module 20. Furthermore, the identical dimensions of the first transistor 211 and the second transistor 212 also allow for a more compact and balanced hardware layout.

[0042] As a first possible implementation, please refer to Figure 3 Both the first transistor 211 and the second transistor 212 are diodes D. The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the positive terminals of diodes D, and the second signal terminals 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the negative terminals of diodes D. Therefore, in this embodiment, the diodes D are connected in reverse. When a bias control signal is applied to the two diodes D, the two diodes D can be equivalent to a capacitor with an adjustable capacitance. That is, by changing the magnitude of the bias control signal applied to the two diodes D, the capacitance value equivalent to the two diodes D can be changed. When the radio frequency signal passes through the tuning module 20, the two diodes D and the first resistor unit 213 can jointly generate a second signal, which can suppress harmonic signals in the radio frequency signal.

[0043] As a second possible implementation, please refer to Figure 4 Both the first transistor 211 and the second transistor 212 are bipolar junction transistors (BJTs). The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the collectors (C) of the BJTs. The second signal terminals 2112 of the first transistor 211 and 2122 of the second transistor 212 are the emitters (E) of the BJTs. The base (B) of each BJT is connected to the collector (C) of its corresponding counterpart. Since the bases (B) of both BJTs are connected to their respective collectors (C), each BJT can be considered equivalent to a diode. Therefore, when the two BJTs are reverse-connected and a bias voltage is applied to them, they can be considered equivalent to an adjustable capacitor. That is, by changing the magnitude of the bias control signal applied to the two BJTs, the equivalent capacitance value of the two BJTs can be changed. When the radio frequency signal passes through the tuning module 20, the two BJT transistors and the first resistor unit 213 can jointly generate a second signal, which can suppress the harmonic signals in the radio frequency signal.

[0044] As a third possible implementation, please refer to Figure 5 Both the first transistor 211 and the second transistor 212 are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the drains D of the MOSFETs. The second signal terminals 2112 of the first transistor 211 and the second signal terminals 2122 of the second transistor 212 are the sources S of the MOSFETs. The gates G of the MOSFETs are connected to the drains D of the corresponding MOSFETs.

[0045] As a fourth possible implementation, please refer to Figure 6 The first transistor 211 and the second transistor 212 are both MOSFETs. The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the sources S of the MOSFETs. The second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the drains D of the MOSFETs. The gate G of the MOSFETs is connected to the source S of the corresponding MOSFETs.

[0046] As a fifth possible implementation, please refer to Figure 7The first transistor 211 and the second transistor 212 are both MOSFETs. The first signal terminal 2110 of the first transistor 211 and the first signal terminal 2120 of the second transistor 212 are the source S of the MOSFETs. The second signal terminal 2112 of the first transistor 211 and the second signal terminal 2122 of the second transistor 212 are the gate G of the MOSFETs. The drain D of the MOSFETs is connected to the source S of the corresponding MOSFETs.

[0047] Because in Figure 5 , Figure 6 or Figure 7 In the illustrated embodiment, any two of the drain (D), source (S), and gate (G) of the MOSFET are connected, making the MOSFET equivalent to a diode. Therefore, when the two connected terminals of two MOSFETs are identical and they are connected in reverse, under the influence of a bias voltage, the two MOSFETs can be equivalent to an adjustable capacitor. That is, by changing the magnitude of the bias control signal applied to the two MOSFETs, the equivalent capacitance value can be changed. When the radio frequency signal passes through the tuning module 20, the two MOSFETs and the first resistor unit 213 can jointly generate a second signal, which can suppress harmonic signals in the radio frequency signal.

[0048] In some other possible embodiments, please refer to Figure 8 The tuning module 20 may include a third transistor 214, a fourth transistor 215, a second resistor unit 216, and a third resistor unit 217. One end of the second resistor unit 216 and the third resistor unit 217 connected in series is connected to the first port 210, and the other end is connected to the second port 230. The first signal terminal 2140 of the third transistor 214 and the first signal terminal 2150 of the fourth transistor 215 are both connected to the common terminal of the second resistor unit 216 and the third resistor unit 217. The second signal terminal 2142 of the third transistor 214 is connected to the first port 210, and the second signal terminal 2152 of the fourth transistor 215 is connected to the second port 230.

[0049] Therefore, when the radio frequency signal passes through the third transistor 214 and the fourth transistor 215 in the tuning module 20, a self-biasing voltage is generated. Since the third transistor 214 and the fourth transistor 215 are connected in reverse, this self-biasing voltage causes the third transistor 214 and the fourth transistor 215 to conduct alternately; that is, at any given time, only one of the third transistor 214 and the fourth transistor 215 is in the conducting state. This causes the current in the third transistor 214 and the fourth transistor 215 to change over time. The total current resulting from their superposition generates a second signal that is out of phase with the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0050] Furthermore, Figure 8 The tuning module 20 shown can generate a second signal without requiring an additional bias signal input, which simplifies the connection method of the tuning module 20.

[0051] exist Figure 8 In the illustrated embodiment, the second resistor unit 216 is connected in parallel across the third transistor 214, and the third resistor unit 217 is connected in parallel across the fourth transistor 215. The second resistor unit 216 and the third resistor unit 217 can respectively protect the parallel-connected transistors from breakdown due to excessive current, ensuring the safe operation of the tuning module 20. Specifically, the second resistor unit 216 and the third resistor unit 217 have the same equivalent resistance value, giving the tuning module 20 good symmetry.

[0052] The second resistor unit 216 and the third resistor unit 217 can be a single resistor or a resistor network composed of multiple resistors connected in series or in parallel. This embodiment does not specifically limit this.

[0053] In some possible embodiments, the third transistor 214 and the fourth transistor 215 have the same parameters. Here, "parameters" can include the transistor type, model, hardware parameters (e.g., current amplification gain), etc. In other possible embodiments, the third transistor 214 and the fourth transistor 215 have the same dimensions. Here, "dimensionality" can be understood as the transistor's package size (e.g., transistor length, aspect ratio, etc.). Therefore, in this embodiment, the third transistor 214 and the fourth transistor 215 are two identical transistors, giving the tuning module 20 better symmetry. Therefore, when the tuning module 20 is used in the RF front-end module 100, even if the tuning module 20 is reverse-connected, it will not affect the normal operation of the tuning module 20. Furthermore, the identical dimensions of the third transistor 214 and the fourth transistor 215 also allow for a more compact and balanced hardware layout.

[0054] As one possible implementation method, please refer to Figure 9In this embodiment, both the third transistor 214 and the fourth transistor 215 are diodes D. The first signal terminal 2140 of the third transistor 214 and the first signal terminal 2150 of the fourth transistor 215 are the positive terminals of diodes D, and the second signal terminal 2142 of the third transistor 214 and the second signal terminal 2152 of the fourth transistor 215 are the negative terminals of diodes D. Therefore, in this embodiment, the two diodes D are connected in reverse. When the radio frequency signal passes through the two diodes D, a self-biasing voltage is generated. This self-biasing voltage causes the two diodes D to conduct alternately, so that the total current after the currents on the two diodes D are superimposed generates a second signal that is out of phase with the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0055] As another possible implementation, please refer to Figure 10 The third transistor 214 and the fourth transistor 215 are both metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal 2140 of the third transistor 214 and the first signal terminal 2150 of the fourth transistor 215 are the drains (D) of the MOSFETs, and the second signal terminals 2142 of the third transistor 214 and 2152 of the fourth transistor 215 are the sources (S) of the MOSFETs. The gate (G) of the MOSFETs is connected to the source (S). Because the gate (G) and source (S) of the MOSFETs are connected, the MOSFETs can be equivalent to a diode. Since the two MOSFETs are connected in reverse, when an RF signal passes through the two MOSFETs, a self-biasing voltage is generated. This self-biasing voltage causes the two MOSFETs to conduct alternately, resulting in a second signal with a phase opposite to the RF signal. This second signal can suppress harmonic signals in the RF signal.

[0056] In some possible embodiments, the tuning module 20 may further include a fourth resistor unit 218 and a fifth resistor unit 219. See also... Figure 11The fourth resistor unit 218, the second resistor unit 216, the third resistor unit 217, and the fifth resistor unit 219 are connected in series, with one end connected to the first port 210 and the other end connected to the second port 230. The second signal terminal 2142 of the third transistor 214 is connected to the common terminal of the fourth resistor unit 218 and the second resistor unit 216, and the second signal terminal 2152 of the fourth transistor 215 is connected to the common terminal of the third resistor unit 217 and the fifth resistor unit 219. In this embodiment, the fourth resistor unit 218 and the fifth resistor unit 219 further limit current flow to prevent the third transistor 214 and the fourth transistor 215 from breaking down due to excessive current. Specifically, the fourth resistor unit 218 and the fifth resistor unit 219 have the same equivalent resistance value, giving the tuning module 20 good symmetry. The fourth resistor unit 218 and the fifth resistor unit 219 can be individual resistors or a resistor network composed of multiple resistors connected in series or parallel; this embodiment does not specifically limit this.

[0057] In some other possible embodiments, please refer to Figure 12 The tuning module 20 may include a fifth transistor 221, a sixth transistor 222, a sixth resistor unit 223, and a seventh resistor unit 224. The first signal terminal 2210 of the fifth transistor 221 is connected to the second signal terminal 2222 of the sixth transistor 222 to form a first common terminal 32. The first common terminal 32 is connected to the first port 210 through the sixth resistor unit 223. The second signal terminal 2212 of the fifth transistor 221 is connected to the first signal terminal 2220 of the sixth transistor 222 to form a second common terminal 34. The second common terminal 34 is connected to the second port 230 through the seventh resistor unit 224.

[0058] Therefore, when the radio frequency signal passes through the fifth transistor 221 and the sixth transistor 222 in the tuning module 20, a self-biasing voltage is generated. Since the fifth transistor 221 and the sixth transistor 222 are connected in reverse, this self-biasing voltage causes the fifth transistor 221 and the sixth transistor 222 to conduct alternately; that is, at any given time, only one of the fifth transistor 221 and the sixth transistor 222 is in the conducting state. This causes the current in the fifth transistor 221 and the sixth transistor 222 to change over time. The total current, resulting from their superposition, generates a second signal that is out of phase with the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0059] Furthermore, Figure 12 The tuning module 20 shown can generate a second signal without requiring an additional bias signal input, which simplifies the connection method of the tuning module 20.

[0060] exist Figure 12In the illustrated embodiment, the transistor network formed by the fifth transistor 221 and the sixth transistor 222 is connected to the first port 210 through the sixth resistor unit 223 and to the second port 230 through the seventh resistor unit 224. That is, the sixth resistor unit 223, the transistor network, and the seventh resistor unit 224 are connected in series. Therefore, when the radio frequency signal passes through the third transistor 214 and the fourth transistor 215 in the tuning module 20, the sixth resistor unit 223 and the seventh resistor unit 224 can respectively limit the current, preventing the fifth transistor 221 and the sixth transistor 222 from breaking down due to excessive current, thus ensuring the safe operation of the tuning module 20. Specifically, the equivalent resistance values ​​of the sixth resistor unit 223 and the seventh resistor unit 224 are the same, giving the tuning module 20 good symmetry. The sixth resistor unit 223 and the seventh resistor unit 224 can be single resistors or a resistor network composed of multiple resistors connected in series or parallel; this embodiment does not specifically limit this.

[0061] In some possible embodiments, the fifth transistor 221 and the sixth transistor 222 have the same parameters. Here, "parameters" can include the transistor type, model, hardware parameters (e.g., current amplification gain), etc. In other possible embodiments, the fifth transistor 221 and the sixth transistor 222 have the same dimensions. Here, "dimensionality" can be understood as the transistor's package size (e.g., transistor length, aspect ratio, etc.). Therefore, in this embodiment, the fifth transistor 221 and the sixth transistor 222 are two identical transistors, giving the tuning module 20 better symmetry. Therefore, when the tuning module 20 is used in the RF front-end module 100, even if the tuning module 20 is reverse-connected, it will not affect the normal operation of the tuning module 20. Furthermore, the identical dimensions of the fifth transistor 221 and the sixth transistor 222 also allow for a more compact and balanced hardware layout.

[0062] As one possible implementation method, please refer to Figure 13 In this embodiment, both the fifth transistor 221 and the sixth transistor 222 are diodes D. The first signal terminal 2210 of the fifth transistor 221 and the first signal terminal 2220 of the sixth transistor 222 are the positive terminals of diodes D, and the second signal terminal 2212 of the fifth transistor 221 and the second signal terminal 2222 of the sixth transistor 222 are the negative terminals of diodes D. Therefore, in this embodiment, the two diodes D are connected in reverse. When the radio frequency signal passes through the two diodes D, a self-biasing voltage is generated. This self-biasing voltage causes the two diodes D to conduct alternately, so that the total current after the currents on the two diodes D are superimposed generates a second signal that is out of phase with the radio frequency signal. This second signal can suppress harmonic signals in the radio frequency signal.

[0063] As another possible implementation, please refer to Figure 14 Both the fifth transistor 221 and the sixth transistor 222 are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal 2210 of the fifth transistor 221 and the first signal terminal 2220 of the sixth transistor 222 are the drains (D) of the MOSFETs, and the second signal terminals 2212 of the fifth transistor 221 and the second signal terminal 2222 of the sixth transistor 222 are the sources (S) of the MOSFETs. The gate (G) of the MOSFETs is connected to the source (S). Since the gate (G) and source (S) of the MOSFETs are connected, the MOSFETs can be equivalent to a diode. Since the two MOSFETs are connected in reverse, when an RF signal passes through the two MOSFETs, a self-biasing voltage is generated. This self-biasing voltage causes the two MOSFETs to conduct alternately, resulting in a total current (the sum of the currents on the two MOSFETs) that generates a second signal with a phase opposite to the RF signal. This second signal can suppress harmonic signals in the RF signal.

[0064] This application provides an embodiment of a radio frequency (RF) front-end module 100, which may include a switch module 10 and a tuning module 20 connected in series with the switch module 10. The tuning module 20 has a first port 210 and a second port 230. The first port 210 is connected to the switch module 10, and the second port 230 is used to output the RF signal after harmonic suppression via the tuning module 20. The tuning module 20 is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input through the first port 210.

[0065] When a radio frequency signal is input to the first port 210, the tuning module 20 can generate a second signal that is out of phase with the harmonic signals in the radio frequency signal to cancel the harmonic signals. Since the second signal has a wide frequency range, for example, the second signal can cover the entire Sub-3 GHz frequency band, the second signal can cancel wide-frequency harmonic signals and achieve broadband suppression.

[0066] Please see Figure 15 This application also provides a radio frequency (RF) front-end module 400, which integrates two or more discrete components such as RF switches, low-noise amplifiers, filters, duplexers, and power amplifiers into a single independent module, thereby improving integration and hardware performance while miniaturizing the size. Specifically, the RF front-end module 400 can be applied to 4G and 5G communication devices such as smartphones, tablets, and smartwatches.

[0067] In this embodiment, the RF front-end module 400 may include a substrate 40 and a designated chip 50. The designated chip 50 is disposed on the substrate 40 and integrates a switch module 60 and a tuning module 70 connected in series with the switch module 60. The tuning module 70 has a first port 710 and a second port 730. The first port 710 is connected to the switch module 60, and the second port 730 is used to output the RF signal after harmonic suppression via the tuning module 70. The tuning module 70 is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input from the first port 710.

[0068] When a radio frequency (RF) signal is input to the first port 710, the tuning module 70 can generate a second signal that is out of phase with the harmonic signals in the RF signal to cancel the harmonic signals. Because the second signal has a wide frequency range, for example, it can cover the entire Sub-3 GHz band, thus canceling wide-frequency harmonic signals and achieving broadband suppression.

[0069] Furthermore, since the switching module 60 and the tuning module 70 are integrated into the same chip (i.e., designated chip 50), the integration density of the RF front-end module 400 can be improved. Because the tuning module 70 can achieve harmonic suppression, there is no need for additional LC resonant circuitry (e.g., surface-mount capacitors), thus eliminating the need for external suppression circuitry. On one hand, the tuning module 70 can suppress harmonic signals with a wider frequency range (e.g., harmonic signals with a bandwidth of 900MHz to 2600MHz); on the other hand, the tuning module 70 can suppress harmonic signals in higher-power RF signals, for example, the power of the RF signal input to the switching module 60 can be greater than or equal to 30dBm.

[0070] The following is a detailed introduction to each unit in the RF front-end module 400.

[0071] In this embodiment, the substrate 40 is generally rectangular and serves to fix and support the components (e.g., designated chip 50) in the RF front-end module 400. Specifically, the substrate 40 can be a copper-clad laminate. By performing hole processing, chemical copper plating, electroplating, etching, and other processes on the copper-clad laminate, circuits can be printed on the surface of the substrate 40. In some possible embodiments, the substrate 40 may be provided with an antenna port 410 for connecting an external antenna.

[0072] The designated chip 50 is disposed on the substrate 40. For example, the designated chip 50 can be mounted on the substrate 40, or soldered to the surface of the substrate 40 by a soldering process (e.g., soldering). In this embodiment, the designated chip 50 integrates a switch module 60 and a tuning module 70 connected in series with the switch module 60. The features of the switch module 60 and the tuning module 70 can refer to and adopt the features of the switch module 10 and the tuning module 20 in the above embodiments, respectively. For the sake of brevity, they will not be described in detail here. Similarly, unless otherwise specified, the switch module 10 and the tuning module 20 in the above embodiments can also have the features of the switch module 60 and the tuning module 70 in this embodiment, and the features of the two embodiments can be combined with each other.

[0073] Since both the switching module 60 and the tuning module 70 in this embodiment are integrated into the designated chip 50, the integration density of the RF front-end module 400 can be improved. Furthermore, since the tuning module 70 can achieve harmonic suppression, there is no need to set up an additional LC resonant circuit (e.g., a surface-mount capacitor), thus eliminating the need for external circuitry for suppression. On one hand, the tuning module 70 can suppress harmonic signals with a wider frequency range (e.g., harmonic signals with a bandwidth of 900MHz to 2600MHz); on the other hand, the tuning module 70 can suppress harmonic signals in higher-power RF signals, for example, the power of the RF signal input to the switching module can be greater than or equal to 30dBm. Further, since no additional LC resonant circuit is needed in the RF front-end module 400, layout space of the RF front-end module 400 can be saved, thereby facilitating the miniaturization design of the RF front-end module 400.

[0074] In some possible embodiments, the designated chip 50 can be a silicon-on-insulator (SOI) chip. For example, when the transistor switches in the switching module 60 are all MOSFETs and the transistors in the tuning module 70 are all MOSFETs, the SOI chip can be designed more simply and at a lower cost.

[0075] In some possible embodiments, the switch module 60 can be an antenna switch, the first port 710 of the tuning module 70 is connected to the antenna switch, and the second port 730 of the tuning module 70 is connected to the antenna port 410. The tuning module 70 is used to suppress harmonic signals in the radio frequency signal output via the antenna switch. Therefore, when there are harmonic signals in the radio frequency signal output by the antenna switch, the tuning module 70 can suppress the harmonic signals before outputting them to the antenna port 410, thereby ensuring the linearity of the radio frequency signal output by the radio frequency front-end module 400. Specifically, when the antenna standing wave ratio (VSWR) is equal to 1:1, that is, when the impedance of the feed line and the antenna are perfectly matched, the tuning module 70 can suppress harmonic signals in radio frequency signals with higher power. For example, the power of the radio frequency signal input to the antenna switch can be greater than or equal to 40 dBm.

[0076] In some other possible embodiments, please refer to Figure 16 The RF front-end module 400 may further include a back-end module 80, which is disposed on the substrate 40 and is used to process RF signals. In this embodiment, the switch module 60 can be a frequency band selection switch, the first port 710 of the tuning module 70 is connected to the frequency band selection switch, and the second port 730 of the tuning module 70 is connected to the back-end module 80. The tuning module 70 is used to suppress harmonic signals in the RF signal output via the frequency band selection switch. Therefore, when there are harmonic signals in the RF signal output by the frequency band selection switch, the tuning module 70 can suppress the harmonic signals before outputting them to the back-end module 80, thereby ensuring the linearity of the RF signal.

[0077] In one implementation, when the frequency band selection switch is located in the transmit path (TX) of the RF front-end module 400, the subsequent module 80 can be a filter (e.g., a duplexer) that can further filter out harmonic signals in the RF signal. In another implementation, when the frequency band selection switch is located in the receive path (RX) of the RF front-end module 400, the subsequent module 80 can be a low-noise amplifier used to amplify the amplitude of the RF signal and reduce noise interference.

[0078] In this embodiment, the RF front-end module 400 may further include an amplifier chip 90, which is disposed on the substrate 40. A switching module 60 is connected between the signal output terminal 910 of the amplifier chip 90 and the tuning module 70. As one implementation, when the amplifier chip 90 is located in the transmit path (TX) of the RF front-end module 400, a power amplifier (e.g., a differential amplifier, push-pull amplifier, etc.) may be integrated in the amplifier chip 90. This power amplifier is used to amplify the power of the RF signal input to the amplifier chip 90. As another implementation, when the amplifier chip 90 is located in the receive path (RX) of the RF front-end module 400, a low-noise amplifier may be integrated in the amplifier chip 90, which is used to amplify the amplitude of the RF signal and reduce noise interference. Specifically, the amplifier chip 90 may be a heterojunction bipolar transistor (HBT) chip, a complementary metal-oxide-semiconductor (CMOS) chip, etc., and this embodiment does not impose specific limitations.

[0079] This application embodiment also provides a radio frequency (RF) front-end module 400, which may include a substrate 40 and a designated chip 50. The designated chip 50 is disposed on the substrate 40 and integrates a switch module 60 and a tuning module 70 connected in series with the switch module 60. The tuning module 70 has a first port 710 and a second port 730. The first port 710 is connected to the switch module 60, and the second port 730 is used to output the RF signal after harmonic suppression by the tuning module 70. The tuning module 70 is configured to generate a second signal with a phase opposite to the first signal, where the first signal refers to the harmonic signal in the RF signal input from the first port 710.

[0080] When a radio frequency (RF) signal is input to the first port 710, the tuning module 70 can generate a second signal that is out of phase with the harmonic signals in the RF signal to cancel the harmonic signals. Because the second signal has a wide frequency range, for example, it can cover the entire Sub-3 GHz band, thus canceling wide-frequency harmonic signals and achieving broadband suppression.

[0081] Furthermore, since the switching module 60 and the tuning module 70 are integrated into the same chip (i.e., designated chip 50), the integration density of the RF front-end module 400 can be improved. In addition, since the tuning module 70 can achieve harmonic suppression, there is no need to set up an additional LC resonant circuit (e.g., a surface-mount capacitor), thus eliminating the need for external suppression circuitry. On the one hand, the tuning module 70 can suppress harmonic signals with a wider frequency range (e.g., harmonic signals with a bandwidth of 900MHz to 2600MHz); on the other hand, the tuning module 70 can suppress harmonic signals in higher-power RF signals, for example, the power of the RF signal input to the switching module 60 can be greater than or equal to 30dBm.

[0082] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different terms to refer to the same pair of components. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0083] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0084] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0085] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0086] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0087] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency front-end module, characterized in that, include: Switch module; as well as A tuning module connected in series with the switching module is used to suppress harmonic signals in the radio frequency signal output via the switching module; The tuning module has a first port and a second port. The first port is connected to the output terminal of the switching module. The first port is used to receive the radio frequency signal output by the switching module. The second port is used to output the radio frequency signal after harmonic suppression by the tuning module. The tuning module is configured to generate a second signal with a phase opposite to the first signal. The first signal refers to the harmonic signal in the radio frequency signal input from the first port.

2. The radio frequency front-end module according to claim 1, characterized in that, The absolute value of the phase difference between the second signal and the harmonic signal in the radio frequency signal is greater than or equal to 170 degrees and less than or equal to 190 degrees.

3. The radio frequency front-end module according to claim 1, characterized in that, The tuning module also has a control port configured to input a bias control signal; the tuning module includes a first transistor, a second transistor, and a first resistor unit. The first signal terminal of the first transistor is connected to the first port, the second signal terminal of the first transistor is connected to the second signal terminal of the second transistor, and the first signal terminal of the second transistor is connected to the second port; One end of the first resistor unit is connected to the control port, and the other end of the first resistor unit is connected to the common terminal of the first transistor and the second transistor.

4. The radio frequency front-end module according to claim 3, characterized in that, The first transistor and the second transistor have the same parameters; or / and The first transistor and the second transistor are the same size.

5. The radio frequency front-end module according to claim 4, characterized in that, Both the first transistor and the second transistor are diodes, with the first signal terminal being the anode of the diode and the second signal terminal being the cathode of the diode; or Both the first transistor and the second transistor are bipolar junction transistors (BJTs). The first signal terminal is the collector of the BJT, the second signal terminal is the emitter of the BJT, and the base of the BJT is connected to the collector. Both the first transistor and the second transistor are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal is the drain of the MOSFET, the second signal terminal is the source of the MOSFET, and the gate of the MOSFET is connected to the drain. or Both the first transistor and the second transistor are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal is the source of the MOSFET, the second signal terminal is the drain of the MOSFET, and the gate of the MOSFET is connected to the source. or Both the first transistor and the second transistor are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal is the source of the MOSFET, the second signal terminal is the gate of the MOSFET, and the drain of the MOSFET is connected to the source.

6. The radio frequency front-end module according to claim 3, characterized in that, The equivalent resistance value of the first resistor unit is greater than or equal to 1 kΩ.

7. The radio frequency front-end module according to claim 1, characterized in that, The tuning module includes a third transistor, a fourth transistor, a second resistor unit, and a third resistor unit; One end of the second resistor unit and the third resistor unit connected in series is connected to the first port, and the other end is connected to the second port; The first signal terminal of the third transistor and the first signal terminal of the fourth transistor are both connected to the common terminal of the second resistor unit and the third resistor unit; The second signal terminal of the third transistor is connected to the first port, and the second signal terminal of the fourth transistor is connected to the second port.

8. The radio frequency front-end module according to claim 7, characterized in that, The second resistor unit and the third resistor unit have the same equivalent resistance value; The third transistor and the fourth transistor have the same parameters; or / and the third transistor and the fourth transistor have the same dimensions.

9. The radio frequency front-end module according to claim 8, characterized in that, Both the third transistor and the fourth transistor are diodes, with the first signal terminal being the anode of the diode and the second signal terminal being the cathode of the diode; or Both the third transistor and the fourth transistor are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal is the drain of the MOSFET, the second signal terminal is the source of the MOSFET, and the gate of the MOSFET is connected to the source.

10. The radio frequency front-end module according to claim 7, characterized in that, The tuning module further includes a fourth resistor unit and a fifth resistor unit; One end of the fourth resistor unit, the second resistor unit, the third resistor unit, and the fifth resistor unit connected in series is connected to the first port, and the other end is connected to the second port; The second signal terminal of the third transistor is connected to the common terminal of the fourth resistor unit and the second resistor unit, and the second signal terminal of the fourth transistor is connected to the common terminal of the third resistor unit and the fifth resistor unit. The fourth resistor unit and the fifth resistor unit have the same equivalent resistance value.

11. The radio frequency front-end module according to claim 1, characterized in that, The tuning module includes a fifth transistor, a sixth transistor, a sixth resistor unit, and a seventh resistor unit; The first signal terminal of the fifth transistor is connected to the second signal terminal of the sixth transistor to form a first common terminal; the first common terminal is connected to the first port through the sixth resistor unit; The second signal terminal of the fifth transistor is connected to the first signal terminal of the sixth transistor to form a second common terminal; The second common terminal is connected to the second port through the seventh resistor unit.

12. The radio frequency front-end module according to claim 11, characterized in that, The fifth transistor and the sixth transistor have at least one identical parameter or dimension; The sixth resistor unit and the seventh resistor unit have the same equivalent resistance value.

13. The radio frequency front-end module according to claim 12, characterized in that, Both the fifth and sixth transistors are diodes, with the first signal terminal being the anode of the diode and the second signal terminal being the cathode of the diode; or Both the fifth transistor and the sixth transistor are metal-oxide-semiconductor field-effect transistors (MOSFETs). The first signal terminal is the drain of the MOSFET, the second signal terminal is the source of the MOSFET, and the gate of the MOSFET is connected to the source.

14. A radio frequency front-end module, characterized in that, include: substrate; as well as A designated chip is disposed on the substrate, and the designated chip integrates a switching module and a tuning module connected in series with the switching module; The tuning module is used to suppress harmonic signals in the radio frequency signal output by the switching module; the tuning module has a first port and a second port, the first port is connected to the output terminal of the switching module, the first port is used to receive the radio frequency signal output by the switching module, and the second port is used to output the radio frequency signal after harmonic suppression by the tuning module; the tuning module is configured to generate a second signal with a phase opposite to the first signal, the first signal referring to the harmonic signals in the radio frequency signal input by the first port.

15. The radio frequency front-end module according to claim 14, characterized in that, The substrate is provided with an antenna port; the switch module is an antenna switch, the first port of the tuning module is connected to the antenna switch, the second port of the tuning module is connected to the antenna port, and the tuning module is used to suppress harmonic signals in the radio frequency signal output through the antenna switch.

16. The radio frequency front-end module according to claim 14, characterized in that, The switch module is a frequency band selection switch. The first port of the tuning module is connected to the frequency band selection switch, and the second port of the tuning module is used to connect to the subsequent module. The tuning module is used to suppress harmonic signals in the radio frequency signal output through the frequency band selection switch.

17. The radio frequency front-end module according to claim 14, characterized in that, The radio frequency front-end module also includes an amplifier chip disposed on the substrate; The switching module is connected between the signal output terminal of the amplifier chip and the tuning module.

18. The radio frequency front-end module according to claim 14, characterized in that, The specified chip is a silicon-on-insulator chip.

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