Flexible temperature sensor

Abstract

The application provides a flexible temperature sensor, which comprises a packaging layer and a sensing layer, the packaging layer is flexible, the packaging layer is internally provided with a first buffer electrode layer and a second buffer electrode layer which are independent of each other, and the surface of the packaging layer is provided with a first conductive port and a second conductive port; the sensing layer is arranged in the packaging layer, one end of the sensing layer extends into the first buffer electrode layer, and the other end of the sensing layer extends into the second buffer electrode layer; the sensing layer is internally provided with a thermosensitive electrode, one end of the thermosensitive electrode is connected with the first conductive port through the first buffer electrode layer, and the other end of the thermosensitive electrode is connected with the second conductive port through the second buffer electrode layer. The buffer electrode layer of the application provides a buffer space for the sensing layer, guarantees that the packaging layer can stretch or bend to a greater extent, meets the deformation requirement of the sensor, reflects the change of the temperature parameter by measuring the change of the resistance value of the thermosensitive electrode, realizes the accurate measurement of the flexible temperature sensor in the deformation state, and improves the practicability.

Description

Technical Field

[0001] This invention relates to the field of temperature sensor technology, and more particularly to a flexible temperature sensor. Background Technology

[0002] A sensor converts the state signal of a detected physical quantity into an electrical signal and other required signal outputs according to a certain rule, to meet the needs of physical parameter detection and control. Due to the bending and deformation characteristics of flexible packaging materials and conductive components, flexible sensors have been widely used in human-computer interaction, biomedicine, motion detection, and wearable devices, showing great application market potential and development prospects. Common temperature sensors can be divided into thermistor temperature sensors and thermocouple temperature sensors. Thermistor temperature sensors utilize the thermal sensitivity of electrodes to temperature; that is, the resistance value of the thermistor electrode varies at different temperatures, thus enabling the monitoring of the entire temperature field. Thermocouple temperature sensors, on the other hand, utilize the difference in thermoelectric potential of different metals under a temperature field to accurately measure the temperature of the measured point. Compared to traditional solid-state temperature sensors, flexible temperature sensors have advantages such as good adhesion to the measured object, high measurement accuracy, and good controllability.

[0003] However, in actual measurement applications, environmental stress can cause flexible sensors to stretch or bend, thus affecting the measurement signal. Currently, the advantages of commonly used flexible resistance temperature sensors are mostly limited to their static adhesion to non-planar objects. The temperature sensing element only provides a high-precision temperature response when static. When the sensing element is bent or deformed, the measurement accuracy is difficult to guarantee, resulting in lower reliability and limiting the application of flexible temperature sensors. Therefore, designing a resistance temperature sensor that can simultaneously measure ambient temperature under stretched or bent conditions has significant scientific research value and practical significance. Summary of the Invention

[0004] This invention provides a flexible temperature sensor to address the shortcomings of existing flexible sensors that are not suitable for stretching or bending during measurement, thereby enabling accurate measurement by the flexible sensor under stretched or bent conditions and expanding the applicability of the flexible sensor.

[0005] This invention provides a flexible temperature sensor, comprising:

[0006] The encapsulation layer is a flexible component. The encapsulation layer has an independent first buffer electrode layer and a second buffer electrode layer inside. The surface of the encapsulation layer has a first conductive port and a second conductive port. The first conductive port is connected to the first buffer electrode layer and the second conductive port is connected to the second buffer electrode layer.

[0007] A sensing layer is disposed within the encapsulation layer. One end of the sensing layer extends into the first buffer electrode layer, and the other end extends into the second buffer electrode layer. A thermistor is disposed inside the sensing layer. One end of the thermistor is connected to the first conductive port through the first buffer electrode layer, and the other end of the thermistor is connected to the second conductive port through the second buffer electrode layer.

[0008] According to an embodiment of the present invention, the encapsulation layer is provided with a first cavity and a second cavity, one end of the sensing layer extends into the first cavity and has a gap with the inner wall of the first cavity, and the other end of the sensing layer extends into the first cavity and has a gap with the inner wall of the second cavity.

[0009] The first buffer electrode layer is liquid metal filled in the first cavity, and the second buffer electrode layer is liquid metal filled in the second cavity.

[0010] According to one embodiment of the present invention, the surface of the encapsulation layer is further provided with a third conductive port and a fourth conductive port.

[0011] One end of the thermistor electrode is provided with a first connection end and a third connection end. The first connection end is connected to the first conductive port through the first buffer electrode layer, and the third connection end is connected to the third conductive port.

[0012] The other end of the thermistor is provided with a second connection end and a fourth connection end. The second connection end is connected to the second conductive port through the second buffer electrode layer, and the fourth connection end is connected to the fourth conductive port.

[0013] According to one embodiment of the present invention, the sensing layer is provided with a fluid channel, the thermistor is a liquid metal filled in the fluid channel, and the first connection end, the second connection end, the third connection end and the fourth connection end are respectively ports of the fluid channel filled with liquid metal.

[0014] According to one embodiment of the present invention, the fluid channels are arranged in a tortuous manner within the sensing layer.

[0015] According to one embodiment of the present invention, the first conductive port, the second conductive port, the third conductive port and the fourth conductive port are respectively injection ports filled with liquid metal, the first conductive port is connected to the first cavity, and the second conductive port is connected to the second cavity.

[0016] According to one embodiment of the present invention, the encapsulation layer includes a first encapsulation layer and a second encapsulation layer. The first encapsulation layer is provided with a first groove and a second groove, and the second encapsulation layer is provided with a third groove and a fourth groove. The first groove and the third groove form a first cavity, and the second groove and the fourth groove form a second cavity. A slot is provided between the first cavity and the second cavity, and the sensing layer is disposed in the slot to isolate the first cavity and the second cavity.

[0017] According to one embodiment of the present invention, the thickness of the thermistor is 10μm-500μm, the thickness of the sensing layer is 800μm-1000μm, and the thickness of the encapsulation layer is 3000μm-5000μm.

[0018] According to one embodiment of the present invention, the encapsulation layer comprises any one or more of polydimethylsiloxane, copolyester, and silicone rubber.

[0019] According to one embodiment of the present invention, the liquid metal includes any one or more of mercury, gallium, gallium-indium alloy, gallium-indium-tin alloy, bismuth-indium alloy, or bismuth-indium-tin alloy.

[0020] The flexible temperature sensor provided by this invention comprises an encapsulation layer and a sensing layer. The encapsulation layer is a flexible component, containing independent first and second buffer electrode layers. The surface of the encapsulation layer has a first conductive port and a second conductive port. The sensing layer is located within the encapsulation layer, with one end extending into the first buffer electrode layer and the other end extending into the second buffer electrode layer. When the flexible encapsulation layer is stretched or bent, the buffer electrode layers provide buffer space for the sensing layer, thereby ensuring greater stretching or bending movement of the flexible temperature sensor and meeting its deformation requirements. The sensing layer contains a thermistor, with one end connected to the first conductive port via the first buffer electrode layer and the other end connected to the second conductive port via the second buffer electrode layer. By measuring the change in the resistance value of the thermistor, the change in the temperature parameter of the measured object is reflected, achieving accurate measurement of the flexible temperature sensor under deformation and improving its practicality. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0022] Figure 1This is a cross-sectional schematic diagram of the flexible temperature sensor provided in an embodiment of the present invention;

[0023] Figure 2 This is a schematic diagram of the sensing layer structure of the flexible temperature sensor provided in an embodiment of the present invention;

[0024] Figure 3 This is a schematic diagram of the appearance of the flexible temperature sensor provided in an embodiment of the present invention;

[0025] Figure 4 This is a schematic diagram of the first encapsulation layer structure of the flexible temperature sensor provided in an embodiment of the present invention;

[0026] Figure 5 This is a schematic diagram of the second encapsulation layer structure of the flexible temperature sensor provided in an embodiment of the present invention;

[0027] Figure 6 yes Figure 3 Schematic diagram of section AA in the diagram;

[0028] Figure 7 This is a schematic diagram of the internal structure of the flexible temperature sensor in a bent state provided in an embodiment of the present invention;

[0029] Figure 8 This is a schematic diagram of the internal bending state of the flexible sensing layer used in the flexible temperature sensor provided in this embodiment of the invention.

[0030] Figure label:

[0031] 100: Encapsulation layer; 101: First conductive port; 102: Second conductive port; 103: Third conductive port; 104: Fourth conductive port; 110: First encapsulation layer; 111: First groove; 112: Second groove; 120: Second encapsulation layer; 121: Third groove; 122: Fourth groove; 130: First cavity; 140: Second cavity; 150: Slot; 200: Sensing layer; 300: Thermistor; 301: First connection terminal; 302: Second connection terminal; 303: Third connection terminal; 304: Fourth connection terminal; 410: First buffer electrode layer; 420: Second buffer electrode layer. Detailed Implementation

[0032] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0033] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0034] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0035] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0036] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0037] Please see Figures 1 to 7This invention provides a flexible temperature sensor, which consists of an encapsulation layer 100 and a sensing layer 200. The encapsulation layer 100 is a flexible component that can be stretched, bent, or deformed.

[0038] The encapsulation layer 100 contains an independent first buffer electrode layer 410 and a second buffer electrode layer 420. The sensing layer 200 is disposed within the encapsulation layer 100, with one end of the sensing layer 200 extending into the first buffer electrode layer 410 and the other end extending into the second buffer electrode layer 420. The first buffer electrode layer 410 and the second buffer electrode layer 420 provide buffer space for the sensing layer 200. When the encapsulation layer 100 is bent or stretched, the sensing layer 200 has a certain buffer space, thereby effectively protecting the sensing layer 200 and facilitating the bending and stretching deformation of the encapsulation layer 100.

[0039] In this embodiment, both the first buffer electrode layer 410 and the second buffer electrode layer 420 are made of thermistor material. The surface of the encapsulation layer 100 is provided with a first conductive port 101 and a second conductive port 102. The first conductive port 101 is connected to the first buffer electrode layer 410, and the second conductive port 102 is connected to the second buffer electrode layer 420. The sensing layer 200 is provided with a thermistor 300. One end of the thermistor 300 is connected to the first buffer electrode layer 410 and is connected to the first conductive port 101 through the first buffer electrode layer 410. The other end of the thermistor 300 is connected to the second buffer electrode layer 420 and is connected to the second conductive port 102 through the second buffer electrode layer 420.

[0040] Based on this, the embodiments of the present invention select the thermistor as the sensing element of the temperature sensor. By connecting and measuring the first conductive port 101 and the second conductive port 102, the fluctuation of the measured temperature can be reflected by the resistance change of the thermistor electrode 300. The flexible encapsulation layer 100 and the first buffer electrode layer 410 and the second buffer electrode layer 420 provide protection for the bending of the temperature sensor body. The first buffer electrode layer 410 and the second buffer electrode layer 420 ensure the electrical connection of the sensing element under the tensile bending deformation state, so as to realize the effective measurement of the temperature sensor under the deformation state.

[0041] Specifically, such as Figure 1 As shown, the encapsulation layer 100 has two independent cavities inside, namely the first cavity 130 and the second cavity 140. One end of the sensing layer 200 extends into the first cavity 130 and has a gap with the inner wall of the first cavity 130. The other end of the sensing layer 200 extends into the second cavity 140 and has a gap with the inner wall of the second cavity 140.

[0042] The first buffer electrode layer 410 is filled with liquid metal in the first cavity 130, and the second buffer electrode layer 420 is filled with liquid metal in the second cavity 140, thus forming two liquid metal buffer electrode layers. In this way, when the encapsulation layer 100 deforms, the first cavity 130 and the second cavity 140 also deform accordingly. The liquid metal buffer electrode layers can adapt to the deformation requirements while simultaneously ensuring electrical connection to the thermistor 300, guaranteeing effective measurement by the temperature sensor under deformation conditions such as stretching or bending. When the entire temperature sensor is bent or stretched, the presence of the internal liquid metal buffer layer reduces the impact of external stress on the core sensor component, improving the accuracy of temperature measurement.

[0043] In the above embodiments, the measurement by connecting the first conductive port 101 and the second conductive port 102 is a two-wire measurement method. Further, in some embodiments, to improve the accuracy of temperature measurement by the temperature sensor in a deformed state, a four-wire measurement method can be used.

[0044] like Figures 1 to 3 As shown, the surface of the encapsulation layer 100 has four conductive ports, namely the first conductive port 101, the second conductive port 102, the third conductive port 103, and the fourth conductive port 104. The thermistor 300 has two connection terminals at each end, for a total of four connection terminals.

[0045] like Figure 2 As shown, one end of the thermistor 300 is provided with a first connection end 301 and a third connection end 303, and the other end of the thermistor 300 is provided with a second connection end 302 and a fourth connection end 304. The first connection end 301 and the second connection end 302 extend to the edge of the sensing layer 200, thereby connecting the first connection end 301 and the second connection end 302 to the first cavity 130 and the second cavity 140 respectively. This allows the first connection end 301 to connect to the first buffer electrode layer 410, and the second connection end 302 to connect to the second buffer electrode layer 420.

[0046] like Figure 6 and Figure 7 As shown, the first connection end 301 of the thermistor electrode 300 is connected to the first conductive port 101 through the first buffer electrode layer 410, and the third connection end 303 is directly connected to the third conductive port 103, without contacting the first buffer electrode layer 410; the second connection end 302 of the thermistor electrode 300 is connected to the second conductive port 102 through the second buffer electrode layer 420, and the fourth connection end 304 is directly connected to the fourth conductive end 104, without contacting the second buffer electrode layer 420.

[0047] In this way, by connecting and measuring the four conductive ports on the surface of the encapsulation layer 100, the resistance of the thermistor 300 can be measured using a four-wire measurement method. This allows for more effective measurement of the temperature sensor's thermistor data, improving the measurement accuracy of the temperature sensor and ensuring accurate measurement even under deformation. The measurement principle of the four-wire thermistor is common knowledge in the art, and will not be described in detail here.

[0048] Conventionally, the thermistor 300 is a resistance wire disposed within the sensing layer 200, typically a solid structure. As a further improvement, in some embodiments, the sensing layer 200 has a fluid channel, and the thermistor 300 is liquid metal filled within the fluid channel. The first connection end 301, the second connection end 302, the third connection end 303, and the fourth connection end 304 are respectively the ports of the fluid channel filled with liquid metal. Filling the fluid channel with liquid metal is more advantageous for fabricating the thermistor 300, reducing manufacturing costs. Furthermore, the liquid metal filling the fluid channel is more suitable for handling the deformation of temperature sensors.

[0049] Therefore, it is worth mentioning that the sensing layer 200 in this embodiment of the invention can be a rigid structure or a flexible structure. The sensing layer 200 can be, but is not limited to, a packaging process using a flexible or rigid substrate material with a microstructure and a rigid substrate such as glass or plexiglass, or it can be directly processed using techniques such as 3D printing. Figure 8 As shown, when the sensing layer 200 is a flexible component, it is more conducive to the overall bending deformation of the temperature sensor. Meanwhile, the design of the thermistor 300 as liquid metal filled within the fluid channel is more suitable for a structure where the sensing layer 200 is a flexible component.

[0050] like Figure 2 As shown, in one embodiment, the fluid channels are arranged in a meandering manner within the sensing layer 200, which can increase the length of the thermistor 300, improve the accuracy of resistance measurement, and at the same time better adapt to stretching and bending, thereby improving the deformation measurement performance of the temperature sensor.

[0051] In one embodiment, the first conductive port 101, the second conductive port 102, the third conductive port 103, and the fourth conductive port 104 are respectively injection ports filled with liquid metal. The first conductive port 101 is connected to the first cavity 130, and the second conductive port 102 is connected to the second cavity 140. In this way, the first buffer electrode layer 410, the second buffer electrode layer 420, and the thermistor 300 mentioned in the above embodiment can be obtained by injecting liquid metal from the first conductive port 101, the second conductive port 102, the third conductive port 103, and the fourth conductive port 104.

[0052] like Figures 3 to 5As shown, in one embodiment, the encapsulation layer 100 includes a first encapsulation layer 110 and a second encapsulation layer 120. The first encapsulation layer 110 is provided with a first groove 111 and a second groove 112. The second encapsulation layer 120 is provided with a third groove 121 and a fourth groove 122. The first cavity 130 is formed by the first groove 111 and the third groove 121, and the second cavity 140 is formed by the second groove 112 and the fourth groove 122.

[0053] The sensing layer 200 is sandwiched between the first encapsulation layer 110 and the second encapsulation layer 120. A slot 150 is provided between the first cavity 130 and the second cavity 140, and the sensing layer 200 is secured in the slot 150 to isolate the first cavity 130 and the second cavity 140, thereby making the first buffer electrode layer 410 and the second buffer electrode layer 420 independent of each other. This design is more conducive to the fabrication of flexible temperature sensors and reduces costs.

[0054] In one embodiment, the thickness of the thermistor 300 is 10μm-500μm, the thickness of the sensing layer 200 is 800μm-1000μm, and the thickness of the encapsulation layer 100 is 3000μm-5000μm.

[0055] In this embodiment, the flexible material of the encapsulation layer 100 can be any one or more of polydimethylsiloxane, copolyester, and silicone rubber.

[0056] Within the sensor's measurement range, the liquid metal in this embodiment can be any one or more of mercury, gallium, gallium-indium alloy, gallium-indium-tin alloy, bismuth-indium alloy, or bismuth-indium-tin alloy.

[0057] Furthermore, for liquid metal resistance temperature sensors, the temperature and the measured resistance satisfy the following relationship:

[0058] R = R0(1 + α(T - T0))

[0059] Where T and T0 represent the temperature and initial temperature of the object being measured, respectively; R and R0 are the resistance values ​​of the flexible temperature sensor at temperatures T and T0, respectively; and α is a physical constant related to the sensor itself.

[0060] In summary, this invention provides a stretchable and deformable flexible resistive temperature sensor based on liquid metal. The invention fabricates a sensing layer 200 with micron-level flow channels, with ports at both ends of the channels. A flexible encapsulation 100 is then applied to the upper and lower sides of the sensing layer 200, forming a flexible device with an independent cavity encapsulating the sensing element. Liquid metal is then injected into and fills the cavity through the ports of the encapsulation layer 100 and the sensing layer 200, thus fabricating a complete stretchable and deformable flexible resistive temperature sensor.

[0061] The technical advantages of this invention are as follows: the conductive component of the sensing layer 200, which serves as the sensing element, is a conductive metal material that can remain liquid within the test temperature range and possesses a large liquid phase temperature range, exhibiting excellent fluidity and flexibility. Injecting the liquid metal into the core temperature sensor creates a liquid metal thermistor 300, which can reflect changes in the temperature parameters of the measured object by measuring changes in resistance. The entire outer shell of the sensing element, the main encapsulation layer 100, is made of a flexible material, meeting the requirements for complete stretching and deformation of the flexible sensor. The internal sensing layer 200 largely prevents the liquid metal thermistor from being squeezed and deformed during the stretching or bending process of the entire flexible element. Furthermore, the high-conductivity liquid metal infused into the cavity layer of the flexible encapsulation layer 100 and the sensing layer 200 not only serves as an electrode for the core sensing element but also, due to its liquid buffering function, effectively reduces the impact of external stress on the internal temperature sensing element.

[0062] This flexible temperature sensor has a simple structure, is easy to manufacture, has low cost, and has high practical value.

[0063] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A flexible temperature sensor, characterized in that, include: The encapsulation layer (100) is a flexible component. The encapsulation layer (100) has an independent first buffer electrode layer (410) and a second buffer electrode layer (420) inside. The surface of the encapsulation layer (100) has a first conductive port (101) and a second conductive port (102). The first conductive port (101) is connected to the first buffer electrode layer (410), and the second conductive port (102) is connected to the second buffer electrode layer (420). A sensing layer (200) is disposed within the encapsulation layer (100). One end of the sensing layer (200) extends into the first buffer electrode layer (410), and the other end of the sensing layer (200) extends into the second buffer electrode layer (420). A thermistor (300) is disposed inside the sensing layer (200). One end of the thermistor (300) is connected to the first conductive port (101) through the first buffer electrode layer (410), and the other end of the thermistor (300) is connected to the second conductive port (102) through the second buffer electrode layer (420). The encapsulation layer (100) has a first cavity (130) and a second cavity (140) inside. One end of the sensing layer (200) extends into the first cavity (130) and has a gap with the inner wall of the first cavity (130). The other end of the sensing layer (200) extends into the second cavity (140) and has a gap with the inner wall of the second cavity (140). The first buffer electrode layer (410) is liquid metal filled in the first cavity (130), and the second buffer electrode layer (420) is liquid metal filled in the second cavity (140); The surface of the encapsulation layer (100) is also provided with a third conductive port (103) and a fourth conductive port (104). The thermistor electrode (300) has a first connection terminal (301) and a third connection terminal (303) at one end. The first connection terminal (301) is connected to the first conductive port (101) through the first buffer electrode layer (410), and the third connection terminal (303) is connected to the third conductive port (103). The other end of the thermistor electrode (300) is provided with a second connection end (302) and a fourth connection end (304). The second connection end (302) is connected to the second conductive port (102) through the second buffer electrode layer (420), and the fourth connection end (304) is connected to the fourth conductive port (104).

2. The flexible temperature sensor according to claim 1, characterized in that, The sensing layer (200) is provided with a fluid channel, and the thermistor (300) is liquid metal filled in the fluid channel. The first connection end (301), the second connection end (302), the third connection end (303) and the fourth connection end (304) are respectively the ports of the fluid channel filled with liquid metal.

3. The flexible temperature sensor according to claim 2, characterized in that, The fluid channels are arranged in a meandering manner within the sensing layer (200).

4. The flexible temperature sensor according to claim 2, characterized in that, The first conductive port (101), the second conductive port (102), the third conductive port (103) and the fourth conductive port (104) are respectively injection ports filled with liquid metal. The first conductive port (101) is connected to the first cavity (130) and the second conductive port (102) is connected to the second cavity (140).

5. The flexible temperature sensor according to claim 1, characterized in that, The encapsulation layer (100) includes a first encapsulation layer (110) and a second encapsulation layer (120). The first encapsulation layer (110) has a first groove (111) and a second groove (112). The second encapsulation layer (120) has a third groove (121) and a fourth groove (122). The first cavity (130) is formed by the first groove (111) and the third groove (121). The second cavity (140) is formed by the second groove (112) and the fourth groove (122). A slot (150) is provided between the first cavity (130) and the second cavity (140). The sensing layer (200) is disposed in the slot (150) to isolate the first cavity (130) and the second cavity (140).

6. The flexible temperature sensor according to any one of claims 1-5, characterized in that, The thickness of the thermistor (300) is 10μm-500μm, the thickness of the sensing layer (200) is 800μm-1000μm, and the thickness of the encapsulation layer (100) is 3000μm-5000μm.

7. The flexible temperature sensor according to any one of claims 1-5, characterized in that, The material of the encapsulation layer (100) includes any one or more of polydimethylsiloxane, copolyester, and silicone rubber.

8. The flexible temperature sensor according to any one of claims 1-5, characterized in that, The liquid metal includes any one or more of mercury, gallium, gallium-indium alloy, gallium-indium-tin alloy, bismuth-indium alloy, or bismuth-indium-tin alloy.

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