In-situ mechanical microelectromechanical devices, systems, and biaxial tilting sample rod

Abstract

This invention relates to the field of in-situ mechanical research at the atomic scale using transmission electron microscopy, and provides an in-situ mechanical microelectromechanical device, system, and dual-axis tilting sample holder. A first displacement element is disposed in a first hollow cavity of a substrate via a first mechanical measurement component, extending into a third hollow cavity of the substrate, and a first sample mounting portion is provided at the extended end of the first displacement element. A second displacement element is disposed in a second hollow cavity of the substrate via a second mechanical measurement component, extending into a third hollow cavity, and a second sample mounting portion is provided at the extended end of the second displacement element. The second sample mounting portion and the first sample mounting portion are nested together. One of the first and second displacement elements is fixedly disposed, and the other is connected to a driving component. The in-situ mechanical microelectromechanical device provided by this invention can simultaneously perform high-mechanical-resolution stable measurements of the load and deformation of a sample during atomic-scale sample characterization.

Description

Technical Field

[0001] This invention relates to the field of in-situ mechanical research technology at the atomic scale using transmission electron microscopy, and particularly to an in-situ mechanical microelectromechanical device, an in-situ mechanical microelectromechanical system, and a biaxial tilting sample rod. Background Technology

[0002] Transmission electron microscopes (TEMs) emit high-energy electron beams that pass through samples, characterizing material structures at the atomic scale, making them important scientific instruments for analyzing sample material structures.

[0003] The atomic-resolution material mechanical property experimental system based on transmission electron microscopy can characterize samples at the atomic scale while applying tensile and compressive loads and acquiring stress-strain curves of the samples in real time to study the correlation between the evolution of the atomic structure of materials and their mechanical properties. This technology is called in-situ transmission electron microscopy mechanics.

[0004] In-situ mechanical technology using transmission electron microscopy involves integrating a mechanical module onto the sample holder of a transmission electron microscope to apply loads to the material. If mechanical sensors are further designed and installed within the module, the mechanical properties of the material can be quantitatively measured.

[0005] For example, the probe-type in-situ force bar applies a stress field to the sample by using a piezoelectric ceramic motor to drive a front-end probe. Combined with sensors such as capacitance and piezoresistive sensors, it quantitatively measures the mechanical properties of the sample. However, for atomic-scale characterization of materials, the sample needs to be able to tilt around both the α and β axes to the positive band. Because the actuator of the probe-type in-situ force bar is relatively large, and the drive shaft penetrates the main body of the sample rod, it loses the β-axis tilting function, making it difficult to observe the evolution of the material's atomic structure in situ during mechanical loading.

[0006] To address this, Professor Han Xiaodong of Beijing University of Technology miniaturized the actuator and developed bimetallic thermally driven deformation technology and MEMS system in-situ mechanical technology in his papers "Tracking the sliding of grain boundaries at the atomic scale" and "Timely and atomic-resolved high-temperature mechanical investigation of ductile fracture and atomistic mechanisms of tungsten," respectively, achieving atomic-scale characterization of materials during the introduction of stress fields. Building on this, Wang et al., in "A MEMSDevice for Quantitative in situ Mechanical Testing in Electron Microscope," further integrated a piezoresistive displacement sensor into the MEMS system. During the deformation process of the material under stress, the resistance of the piezoresistor changes, causing a change in the output voltage of the Wheatstone bridge, thus achieving quantitative measurement of the material's stress and deformation. However, piezoresistive sensors are prone to Joule heating during operation, and high thermal noise and thermal drift are difficult to filter out, resulting in low quantitative measurement performance.

[0007] To address this, the Espinosa research group at Northwestern University, leveraging the advantage of capacitance's insensitivity to operating temperature and its ability to ensure signal accuracy under varying operating temperatures, developed a MEMS device integrating a capacitive displacement sensor in their paper, "An electromechanical material testing system for insitu electron microscopy and applications," achieving displacement and load measurements with low signal drift. However, because the microcapacitive signal acquisition device is separated from the in-situ sample rod and placed outside the rod body, at a considerable distance from the capacitive sensor circuitry, it exhibits high parasitic capacitance. Furthermore, external electromagnetic clutter significantly interferes with signal transmission during application, making it difficult to achieve low-noise, high-mechanical-resolution quantitative measurements. Summary of the Invention

[0008] The first aspect of the present invention provides an in-situ mechanical microelectromechanical device to solve at least one of the technical defects in the above-mentioned technical problems. It can simultaneously perform high-mechanical-resolution stable measurements of the load and deformation of the sample while characterizing the sample at the atomic scale, thereby fundamentally establishing the relationship between the atomic structure evolution and mechanical properties of the sample material.

[0009] A second aspect of the present invention provides an in-situ mechanical microelectromechanical system.

[0010] A third aspect of the present invention provides a biaxial tilting sample bar.

[0011] The first aspect of this invention provides an in-situ mechanical microelectromechanical device, comprising: The substrate has a first hollow cavity, a second hollow cavity and a third hollow cavity, wherein the third hollow cavity is located between the first hollow cavity and the second hollow cavity; A first displacement member is disposed in the first hollow cavity via a first mechanical measuring component. The first displacement member extends to the third hollow cavity, and a first sample mounting part is provided at the extended end of the first displacement member. The second displacement member is disposed in the second hollow cavity via the second mechanical measuring component. The second displacement member extends to the third hollow cavity, and a second sample mounting part is provided at the extended end of the second displacement member. The second sample mounting part is nested with the first sample mounting part. In this configuration, one of the first displacement member and the second displacement member is fixedly disposed, and the other of the first displacement member and the second displacement member is connected to a driving component.

[0012] According to the present invention, an in-situ mechanical microelectromechanical device is provided, wherein the first mechanical measurement component includes a first elastic support, a first sensing component and a first wire assembly, and the first elastic support and the first sensing component are respectively connected to an integrated module through the first wire assembly; The first elastic support is located on the moving path of the first displacement member and is fixedly connected to the first displacement member. Both ends of the first elastic support are fixed to the base. The first sensing component is disposed on at least one side of the first displacement member, and a portion of the first sensing component is adapted to move with the first displacement member to change the capacitance of the first sensing component.

[0013] According to the present invention, an in-situ mechanical microelectromechanical device is provided, wherein the first sensing component includes a plurality of first fixed plates and a plurality of first follower plates; Multiple first follower plates are spaced apart on the first displacement member along the moving direction of the first displacement member; Multiple first fixed plates are spaced apart on the substrate along the moving direction of the first displacement member, and each first fixed plate is located between two adjacent first follower plates.

[0014] According to an in-situ mechanical microelectromechanical device provided by the present invention, the first wire assembly includes a first branch wire and a second branch wire; The first branch conductor is connected to a plurality of first fixed electrode plates through a metal adhesion layer disposed on the substrate; The second branch conductor is connected to the first elastic support member through a pressure welding area provided on the substrate.

[0015] According to the present invention, an in-situ mechanical microelectromechanical device is provided, wherein the second mechanical measurement component includes a second elastic support, a second sensing component, and a second wire assembly, wherein the second elastic support and the second sensing component are respectively connected to an integrated module through the second wire assembly; The second elastic support is located on the moving path of the second displacement member and is fixedly connected to the second displacement member. Both ends of the second elastic support are fixed to the base. The second sensing component is disposed on at least one side of the second displacement member, and a portion of the second sensing component is adapted to move with the second displacement member to change the capacitance of the second sensing component.

[0016] According to the present invention, an in-situ mechanical microelectromechanical device is provided, wherein the second sensing component includes a plurality of second fixed plates and a plurality of second follower plates; Multiple second follower plates are spaced apart on the second displacement member along the moving direction of the second displacement member; Multiple second fixed plates are spaced apart on the substrate along the moving direction of the second displacement member, and each second fixed plate is located between two adjacent second follower plates.

[0017] According to the present invention, in an in-situ mechanical microelectromechanical device, the second wire assembly includes a third branch wire and a fourth branch wire; The third branch conductor is connected to multiple second fixed electrode plates through a metal adhesion layer disposed on the substrate; The fourth branch conductor is connected to the second elastic support member through a pressure welding area provided on the substrate.

[0018] The present invention also provides an in-situ mechanical microelectromechanical system, comprising an integrated module, a signal acquisition module, and the in-situ mechanical microelectromechanical device described in any of the foregoing embodiments; The integrated module and the in-situ mechanical microelectromechanical device are electrically connected via a first flexible lead; the integrated module and the signal acquisition module are electrically connected via a second flexible lead (not shown in the figure).

[0019] According to the present invention, an in-situ mechanical microelectromechanical system is provided, wherein the integrated module includes multiple interconnected capacitance acquisition interfaces, a capacitance acquisition conversion circuit, and a signal output interface. The multiple capacitance acquisition interfaces are connected to the in-situ mechanical microelectromechanical device through a first flexible lead, and the signal output interface is connected to the signal acquisition module through a second flexible lead.

[0020] According to an in-situ mechanical microelectromechanical system provided by the present invention, the signal acquisition module includes a microcontroller, and a signal acquisition interface and a serial communication interface connected to the microcontroller. The signal acquisition interface is connected to the signal output interface through a second flexible lead.

[0021] The present invention also provides a biaxial tilting sample holder for use in transmission electron microscopy, comprising: Drive unit; The rod body includes a support body and a drive rod. The support body has a hollow cavity. The drive rod passes through the hollow cavity. One end of the drive rod is connected to the drive device and is adapted to reciprocate along the inner wall of the hollow cavity under the action of the drive device. A tilting table is rotatably connected to the support body and hinged to the drive rod, and is adapted to move with the drive rod to tilt. The in-situ mechanical microelectromechanical system described in any of the foregoing embodiments is wherein each part of the in-situ mechanical microelectromechanical system is disposed in the tilting table, the rod body and the driving device.

[0022] According to the present invention, a biaxial tilting sample bar is provided, wherein the tilting stage comprises: The tilting body is equipped with a U-shaped tilting groove; The mounting platform is located inside the tilting groove and is rotatably connected to the tilting body. The connecting rod is rotatably connected at one end to the mounting platform and at the other end to the drive rod; A mounting component is fixedly disposed on the mounting platform. The mounting component has a mounting cavity, and the in-situ mechanical microelectromechanical device of the in-situ mechanical microelectromechanical system is embedded in the mounting cavity.

[0023] According to the present invention, a dual-axis tilting sample rod is provided with a motion guide groove at the front end of the support body, and the connecting rod is rotatably connected to the mounting platform through a rotating shaft, and the rotating shaft is slidably engaged with the motion guide.

[0024] According to the present invention, a biaxial tilting sample rod is provided, wherein the driving device includes: The housing has a first chamber and a second chamber spaced apart, the first chamber being located close to the rod body, and the second chamber being sealed. A driving component is disposed in the first chamber and connected to the driving rod; The signal acquisition module of the in-situ mechanical microelectromechanical system is located in the second chamber.

[0025] In the in-situ mechanical microelectromechanical device provided in this embodiment of the invention, by fixing one of the first displacement member and the second displacement member and connecting the other to the driving component, the driving component can stretch or compress the first displacement member or the second displacement member, thus applying stress to the first displacement member and the second displacement member. By nesting the second sample mounting part with the first sample mounting part, when the sample is placed in the sample mounting part, the driving component can apply different stress fields to the sample based on the nested first and second sample mounting parts, i.e., stretching or compressing the sample. Furthermore, by connecting the first and second mechanical measurement components correspondingly to the first and second displacement members, the displacement changes of the first and second displacement members and the stress on the sample can be measured. By calculating the difference in displacement between the first and second displacement members, the deformation of the sample can be obtained. Thus, in the in-situ mechanical technology of transmission electron microscopy, the relationship between the atomic structure evolution and mechanical properties of the sample material can be fundamentally established.

[0026] The in-situ mechanical microelectromechanical system provided in this embodiment of the invention, because it includes the aforementioned in-situ mechanical microelectromechanical device, possesses all the advantages of the aforementioned in-situ mechanical microelectromechanical device. In addition, the in-situ mechanical microelectromechanical system provided in this embodiment of the invention can transmit the capacitance signals collected by the first and second sensing components to the integrated module through the first flexible lead. The integrated module can then convert the capacitance signals into voltage signals, and then convert the voltage signals into digital signals, which are transmitted to the signal acquisition module through the second flexible lead. In this way, signal communication of the in-situ mechanical microelectromechanical system can be realized. Furthermore, the signal acquisition module can also reversely power the entire in-situ mechanical microelectromechanical system.

[0027] The dual-axis tilting sample rod provided in this embodiment of the invention includes the aforementioned in-situ mechanical microelectromechanical system, and therefore possesses all the advantages of the aforementioned in-situ mechanical microelectromechanical system. In addition, the dual-axis tilting sample rod provided in this embodiment of the invention achieves the tilting motion of the tilting table by rotating the front end of the support body to the tilting table and rotating the rear end of the tilting table to the front end of the drive rod, so that the drive device can achieve the tilting motion of the tilting table by reciprocating along the axial direction of the drive rod.

[0028] Compared to existing technologies, the dual-axis tilting sample rod provided in this invention reduces the distance of the capacitive sensor circuitry and the parasitic capacitance in the circuitry by integrating an in-situ mechanical microelectromechanical system into the dual-axis tilting sample rod. In application, it reduces crosstalk of external electromagnetic noise to signal transmission and achieves low-noise, high-mechanical-resolution quantitative measurement. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of the structure of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention; Figure 2 This is an exploded structural diagram of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention; Figure 3 yes Figure 1 A magnified schematic diagram of the partial structure at point A in the middle; Figure 4 This is a schematic diagram of the layout of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention; Figure 5 yes Figure 3 A magnified schematic diagram of the local structure at point B; Figure 6 This is a schematic diagram of the layout of the first and second wire assemblies of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention; Figure 7 This is a schematic diagram of an integrated module in an in-situ mechanical microelectromechanical system provided in an embodiment of the present invention; Figure 8 This is a schematic diagram of the signal acquisition module in the in-situ mechanical microelectromechanical system provided in an embodiment of the present invention; Figure 9 This is a schematic diagram of the overall structure of the dual-axis tilting sample rod provided in an embodiment of the present invention; Figure 10 This is a front view of the dual-axis tilting sample bar provided in an embodiment of the present invention; Figure 11 This is a top view of the biaxial tilting sample bar provided in an embodiment of the present invention; Figure 12 yes Figure 10 A cross-sectional view of the middle FF; Figure 13 yes Figure 11 A magnified schematic diagram of the structure at point C in the middle; Figure 14 yes Figure 13 The right view; Figure 15 This is a schematic diagram of the tilting table connection of the dual-axis tilting sample rod provided in an embodiment of the present invention; Figure 16 This is a schematic diagram of the tilting stage of the dual-axis tilting sample rod provided in an embodiment of the present invention; Figure 17 This is a schematic diagram of the tilting stage from another perspective of the dual-axis tilting sample rod provided in an embodiment of the present invention; Figure 18 This is a schematic diagram of the motion guide groove of the dual-axis tilting sample rod provided in an embodiment of the present invention.

[0031] Figure label: 0: In-situ mechanical microelectromechanical devices; 010: Substrate; 011: First hollow cavity; 012: Second hollow cavity; 013: Third hollow cavity; 016: Sample; 017: Driving component; 020: First displacement component; 021: First sample mounting part; 030: First mechanical measurement component; 031: First elastic support; 032: First sensing component; 0321: First fixed electrode plate; 0322: First follower electrode plate; 033: First wire assembly; 0331: First branch wire; 0332: Second branch wire; 040: Second displacement component; 041: Second sample mounting part; 050: Second mechanical measurement component; 051: Second elastic support; 052: Second sensing component; 0521: Second fixed electrode plate; 0522: Second follower electrode plate; 053: Second lead assembly; 0531: Third branch lead; 0532: Fourth branch lead; 1: In-situ mechanical microelectromechanical systems; 110: Integrated module; 111: Capacitance acquisition interface; 112: Capacitance acquisition and conversion circuit; 113: Signal output interface; 120: Signal acquisition module; 121: Microcontroller; 122: Signal acquisition interface; 123: Serial communication interface; 130: First flexible lead; 2: Dual-axis tilting sample rod; 210: Rod body; 211: Support body; 2111: Motion guide groove; 212: Drive rod; 2121: Fixed shaft; 220: Tilting stage; 221: Tilting body; 2211: Tilting groove; 222: Mounting platform; 2221: Inclined part; 2222: Horizontal part; 2223: Electron beam through-hole; 223: Connecting rod; 224: Mounting component; 2241: Mounting cavity; 2242: Mounting part; 230: Drive unit; 231: Housing; 2311: First chamber; 2312: Second chamber; 232: Drive component. Detailed Implementation

[0032] The embodiments of the present invention will be described in further detail below with reference to the accompanying drawings and examples. The following examples are for illustrative purposes only and should not be construed as limiting the scope of the invention.

[0033] In the description of the embodiments of the present invention, it should be noted that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of the present invention. In addition, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0034] In the description of the embodiments of the present invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms in the embodiments of the present invention based on the specific circumstances.

[0035] In embodiments of the present invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0036] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0037] Figure 1 This is a schematic diagram of the structure of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention; Figure 2 This is an exploded view of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention.

[0038] Reference Figure 1 and Figure 2 The present invention provides an in-situ mechanical microelectromechanical device, which includes a substrate 010, a first displacement element 020, a first mechanical measurement component 030, a second mechanical measurement component 050, and a second displacement element 040.

[0039] The substrate 010 has a first hollow cavity 011, a second hollow cavity 012, and a third hollow cavity 013, with the third hollow cavity 013 located between the first hollow cavity 011 and the second hollow cavity 012. A first displacement member 020 is disposed in the first hollow cavity 011 via a first mechanical measuring component 030, extends to the third hollow cavity 013, and has a first sample mounting part 021 at its extended end. A second displacement member 040 is disposed in the second hollow cavity 012 via a second mechanical measuring component 050, extends to the third hollow cavity 013, and has a second sample mounting part 041 at its extended end, which is nested with the first sample mounting part 021. One of the first displacement member 020 and the second displacement member 040 is fixedly disposed, and the other of the first displacement member 020 and the second displacement member 040 is connected to a driving component 017.

[0040] In optional embodiments of the present invention, such as Figure 1 As shown, the in-situ mechanical microelectromechanical device adopts an axisymmetric structure, that is, with the central axis of the first displacement member 020 and the second displacement member 040 as the line of symmetry, the left and right sides of the in-situ mechanical microelectromechanical device are arranged approximately symmetrically. The structural stability of the in-situ mechanical microelectromechanical device can be guaranteed by the geometric design of the axisymmetric structure.

[0041] The substrate 010 primarily serves to support the structure of the in-situ mechanical microelectromechanical device. In optional embodiments of the present invention, the thickness of the substrate 010 can range from 200 to 500 micrometers; for example, a substrate 010 with a thickness of 200, 300, 400, or 500 micrometers can be selected. In optional embodiments of the present invention, the length and width of the substrate 010 can range from 2 to 4 millimeters; for example, a substrate 010 with a length of 2, 3, or 4 millimeters and a width of 2, 3, or 4 millimeters can be selected. The thickness, length, and width of the substrate 010 are not specifically limited in the embodiments of the present invention.

[0042] The material of the substrate 010 can be selected from silicon on insulator (SOI) wafers, glass / silicon dioxide (SiO2) wafers, lithium niobate (LiNbO3) wafers, III-V group semiconductor compound wafers (such as InP, GaAs, etc.), silicon oxynitride (SiON) wafers, and polymer wafers, etc.; as a specific example, the embodiment of the present invention uses silicon on insulator (SOI) wafers as an example.

[0043] Specifically, in an optional embodiment of the present invention, the in-situ mechanical microelectromechanical device can be integrally formed using semiconductor etching technology, which enables mass production and improves product consistency and yield.

[0044] Specifically, the fabrication method of in-situ mechanical microelectromechanical devices (MEMS) semiconductor etching technology can be carried out according to the following steps: The first step involves using an SOI wafer as a substrate, rinsing off the SiO2 on the surface of the SOI wafer with a buffered hydrofluoric acid (BHF) buffer, and then performing magnetron sputtering on the surface to form a metal thin film with a metal adhesion layer. The second step is to perform photolithography on the surface to etch out the metal wire structure, and then use wet etching to remove the remaining surface metal. The third step is to further pattern the surface with photolithography and perform reactive ion etching on the top silicon layer through plasma to form structures such as the first displacement element 020, the second displacement element 040, the first mechanical measurement component 030, and the second mechanical measurement component 050. The fourth step involves overlaying a pattern onto the back of the SOI wafer, performing deep silicon etching to form a hollow structure, removing the buried oxide layer in the middle of the SOI wafer, releasing the structure in various places, completing the process steps, and obtaining the in-situ mechanical microelectromechanical device.

[0045] The detailed manufacturing process will not be repeated here in the embodiments of the present invention; it should be noted that the above-mentioned method for preparing the in-situ mechanical microelectromechanical device is only an optional example of the embodiments of the present invention, and is not intended to be a specific limitation on the method for preparing the in-situ mechanical microelectromechanical device of the present invention.

[0046] Figure 3 yes Figure 1 A magnified schematic diagram of the structure at point A in the middle.

[0047] Reference Figure 1 and Figure 3In an optional embodiment of the present invention, the nested arrangement formed by the first sample mounting part 021 and the second sample mounting part 041 can be configured as a set of "L"-shaped compression and tension structures, with the sample 016 in the middle of the compression and tension structure. In other words, the sample 016 is placed between the first sample mounting part 021 and the second sample mounting part 041, and the stress transfer between the first sample mounting part 021 and the second sample mounting part 041 needs to pass through the sample 016.

[0048] Figure 4 This is a schematic diagram of the layout of the in-situ mechanical microelectromechanical device provided in an embodiment of the present invention.

[0049] The function of the actuating end of the driving component 017 is to drive and control the sample 016 of the sample mounting part 2242 in atomic-scale stepping stretching, compression and other modes.

[0050] Reference Figure 1 and Figure 4 The connection between the driving component 017 and the first displacement component 020 or the second displacement component 040 can be a fixed connection, such as a connection by adhesive bonding, a connection by hook and hanging hole, a connection by buckle and slot, or a threaded connection. In an optional embodiment of the present invention, the connection between the driving component 017 and the first displacement component 020 or the second displacement component 040 can also be a magnetic connection. For example, an electromagnet device is provided on the driving component 017, and a magnetic material is provided on the side of the first displacement component 020 or the second displacement component 040 facing the driving component 017. The driving component 017 applies a magnetic field to the magnetic material to generate an attractive or repulsive force, thereby realizing the driving component 017 driving the first displacement component 020 or the second displacement component 040.

[0051] It is understood that in the in-situ mechanical microelectromechanical device provided in the embodiments of the present invention, by fixing one of the first displacement member 020 and the second displacement member 040 and connecting the other to the driving component 017, stress can be applied to the first displacement member 020 and the second displacement member 040 by stretching or compressing the first displacement member 020 or the second displacement member 040 through the driving component 017; by nesting the second sample mounting part 041 with the first sample mounting part 021, when the sample 016 is placed in the sample mounting part 2242, the driving component 017 can achieve the same effect based on the nested first sample mounting part 021 and the second sample mounting part 041. The carrier 041 applies different stress fields to the sample 016, i.e., stretching or compressing the sample 016. Furthermore, through the first mechanical measurement component 030 and the second mechanical measurement component 050 connected to the first displacement component 020 and the second displacement component 040 respectively, the displacement change of the first displacement component 020 and the second displacement component 040 and the stress on the sample 016 can be measured. By calculating the difference between the displacement of the first displacement component 020 and the second displacement component 040, the deformation of the sample 016 can be obtained. In this way, in the in-situ mechanical technology of transmission electron microscopy, the relationship between the atomic structure evolution of the sample 016 material and its mechanical properties can be fundamentally established.

[0052] Compared to existing technologies, the in-situ mechanical microelectromechanical device provided in this embodiment of the invention is based on the nested arrangement of the first displacement element 020 and the second displacement element 040. It can apply different stress fields to the sample 016 through the driving device 230, and obtain key mechanical property data such as the load and deformation of the sample 016 through the first mechanical measurement group and the second mechanical measurement component 050. This enables stable measurement of the load and deformation of the sample 016 with high mechanical resolution while characterizing the sample 016 at the atomic scale.

[0053] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the first mechanical measurement component 030 includes a first elastic support 031, a first sensing component 032 and a first wire component 033.

[0054] The first elastic support 031 and the first sensing component 032 are respectively connected to the integrated module 110 through the first wire assembly 033; the first elastic support 031 is located on the moving path of the first displacement component 020 and is fixedly connected to the first displacement component 020, and both ends of the first elastic support 031 are fixed to the base 010; the first sensing component 032 is disposed on at least one side of the first displacement component 020, and part of the first sensing component 032 is adapted to move with the first displacement component 020 to change the capacitance of the first sensing component 032.

[0055] Specifically, such as Figure 1As shown, the two ends of the first elastic support 031 are fixedly connected to the base 010 to support the first displacement member 020 and the part of the first sensing component 032 connected to the first displacement member 020, so as to ensure its stability; the first elastic support 031 is disposed on the side of the first displacement member 020 away from the first sensing component 032 along the length direction, that is, on the moving path of the first displacement member 020.

[0056] The first elastic support 031 and the first displacement member 020 can be fixedly connected by welding. In an optional embodiment of the present invention, the above-mentioned fixed connection can also be connected by snap-fit ​​and slot interlocking, or by threaded connection. The embodiments of the present invention do not specifically limit this.

[0057] Specifically, refer to Figure 1 and Figure 3 In an optional embodiment of the present invention, some of the first sensing components 032 can be disposed on both sides of the first displacement member 020, that is, some of the first sensing components 032 are arranged on both sides of the first displacement member 020 with the central axis of the first displacement member 020 as the axis of symmetry. This can improve the stability of the first displacement member 020 and the portion of the first sensing components 032 connected to the first displacement member 020. In other optional embodiments of the present invention, some of the first sensing components 032 can be disposed on only one side of the first displacement member 020. The specific arrangement can be adaptively selected according to needs.

[0058] In some embodiments of the invention, the first sensing component 032 and the first displacement component 020 can be manufactured as a single unit. This involves placing molten conductive material in a pre-laid mold and allowing it to cool to obtain the first displacement component 020 with the first sensing component 032 attached. In other optional embodiments of the invention, the first sensing component 032 and the first displacement component 020 can be fixedly connected by a combination installation method. For example, mounting holes are opened on the side wall of the first displacement component 020, and connecting rods corresponding to the mounting holes are provided on the first sensing component 032. By inserting the connecting rods into the mounting holes, the first sensing component 032 and the first displacement component 020 are fixedly connected. The connection method between the first sensing component 032 and the first displacement component 020 can also be threaded connection, welding, or snap-fit. There are various ways to fix the connection, and these embodiments of the invention will not be listed one by one here.

[0059] It is understood that in the in-situ mechanical microelectromechanical device provided in the embodiments of the present invention, by disposing the first sensing component 032 on at least one side of the first displacement component 020, a portion of the first sensing component 032 can move with the first displacement component 020. The change in position of the portion of the first sensing component 032 can change the capacitance of the first sensing component 032, and the change in capacitance of the first sensing component 032 can reflect the displacement change of the first displacement component 020. By fixing both ends of the first elastic support 031 to the base 010 and disposing the first elastic support 031 on the moving path of the first displacement component 020 and fixing the two together, the first elastic support 031 can support the first displacement component 020 and the portion of the first sensing component 032 connected to the first displacement component 020, thus ensuring its stability.

[0060] Figure 5 yes Figure 3 A magnified schematic diagram of the structure at point B in the middle.

[0061] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the first sensing component 032 includes a plurality of first fixed electrode plates 0321 and a plurality of first follower electrode plates 0322.

[0062] Among them, such as Figure 5 As shown, a plurality of first follower plates 0322 are spaced apart on the first displacement member 020 along the moving direction of the first displacement member 020; a plurality of first fixed plates 0321 are spaced apart on the substrate 010 along the moving direction of the first displacement member 020, and each first fixed plate 0321 is located between two adjacent first follower plates 0322.

[0063] Specifically, the number of the first follower electrode 0322 and the first fixed electrode 0321 can be adaptively selected; the correspondence between the first follower electrode 0322 and the first fixed electrode 0321 can be one first follower electrode 0322 corresponding to one first fixed electrode 0321, one first follower electrode 0322 corresponding to two first fixed electrode 0321, or two first follower electrode 0322 corresponding to one first fixed electrode 0321; the embodiment of the present invention uses the first fixed electrode 0321 located between two adjacent first follower electrode 0322, that is, one first fixed electrode 0321 corresponding to one first follower electrode 0322, as a specific example for explanation.

[0064] It is understood that in the in-situ mechanical microelectromechanical device provided in the embodiments of the present invention, by distributing multiple first follower plates 0322 and multiple first follower plates 0322 at intervals on the first displacement member 020 and the substrate 010 respectively, and arranging them along the moving direction of the first displacement member 020, when the first follower plates 0322 move with the first displacement member 020, the distance between the multiple first follower plates 0322 and the multiple first fixed plates 0321 will change, thereby affecting the electric field formed between the first follower plates 0322 and the first follower plates 0322, causing the capacitance of the electric field to change, thereby reflecting the displacement of the first displacement member 020.

[0065] Figure 6 This is a schematic diagram of the layout of the first wire assembly 033 and the second wire assembly 053 of the in-situ mechanical microelectromechanical device provided in the embodiment of the present invention.

[0066] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the first wire assembly 033 includes a first branch wire 0331 and a second branch wire 0332; refer to Figure 1 and Figure 6 The first branch conductor 0331 is connected to multiple first fixed electrode plates 0321 through a metal adhesion layer on the substrate 010; the second branch conductor 0332 is connected to the first elastic support member 031 through a pressure welding area on the substrate 010. In this way, by connecting multiple first fixed electrode plates 0321 through the first branch conductor 0331 and connecting the first elastic support member 031 through the second branch conductor 0332, and then connecting multiple first follower electrode plates 0322, insulation between the first fixed electrode plate 0321 and the first follower electrode plate 0322 can be achieved, providing conditions for the formation of an electric field between the first follower electrode plate 0322 and the first fixed electrode plate 0321.

[0067] Based on the above embodiments, unlike the above embodiments, the in-situ mechanical microelectromechanical device provided by the present invention refers to... Figure 1 The second mechanical measurement component 050 includes a second elastic support 051, a second sensing component 052, and a second wire assembly 053. The second elastic support 051 and the second sensing component 052 are respectively connected to the integrated module 110 through the second wire assembly 053.

[0068] The second elastic support 051 is located on the moving path of the second displacement member 040 and is fixedly connected to the second displacement member 040. Both ends of the second elastic support 051 are fixed to the base 010. The second sensing component 052 is disposed on at least one side of the second displacement member 040. Part of the second sensing component 052 is adapted to move with the second displacement member 040 to change the capacitance of the second sensing component 052.

[0069] The specific configuration of the second elastic support 051, the second sensing component 052, and the second wire assembly 053 can be referred to the specific configuration of the first elastic support 031, the first sensing component 032, and the first wire assembly 033 described above, and will not be repeated here.

[0070] It is understood that in the in-situ mechanical microelectromechanical device provided in the embodiments of the present invention, by disposing the second sensing component 052 on at least one side of the second displacement component 040, a portion of the second sensing component 052 can move with the second displacement component 040. The change in position of the portion of the second sensing component 052 can change the capacitance of the second sensing component 052, and the change in capacitance of the second sensing component 052 can reflect the displacement change of the second displacement component 040. By fixing both ends of the second elastic support 051 to the base 010 and disposing the second elastic support 051 on the moving path of the second displacement component 040 and fixing the two together, the second elastic support 051 can support the second displacement component 040 and the portion of the second sensing component 052 connected to the second displacement component 040, thus ensuring its stability.

[0071] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the second sensing component 052 includes a plurality of second fixed electrode plates 0521 and a plurality of second follower electrode plates 0522.

[0072] Among them, reference Figure 1 , Figure 3 and Figure 5 Multiple second follower plates 0522 are spaced apart on the second displacement member 040 along the moving direction of the second displacement member 040; multiple second fixed plates 0521 are spaced apart on the base 010 along the moving direction of the second displacement member 040, and each second fixed plate 0521 is located between two adjacent second follower plates 0522.

[0073] Specifically, the specific arrangement of the plurality of second fixed electrode plates 0521 and the plurality of second follower electrode plates 0522 can refer to the specific arrangement of the plurality of first fixed electrode plates 0321 and the plurality of first follower electrode plates 0322 described above, and will not be repeated here in the embodiments of the present invention.

[0074] It is understood that in the in-situ mechanical microelectromechanical device provided in the embodiments of the present invention, by distributing multiple second follower plates 0522 and multiple second follower plates 0522 at intervals on the second displacement member 040 and the substrate 010 respectively, and arranging them along the moving direction of the second displacement member 040, when the second follower plates 0522 move with the second displacement member 040, the distance between the multiple second follower plates 0522 and the multiple second fixed plates 0521 will change, thereby affecting the capacitance change of the electric field formed between the second follower plates 0522 and the second follower plates 0522, thus reflecting the displacement of the second displacement member 040.

[0075] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the second conductor assembly 053 includes a third branch conductor 0531 and a fourth branch conductor 0532.

[0076] Reference Figure 1 and Figure 6 The third branch conductor 0531 is connected to multiple second fixed electrode plates 0521 through a metal adhesion layer provided on the substrate 010; the fourth branch conductor 0532 is connected to the second elastic support member 051 through a pressure welding area provided on the substrate 010. In this way, by connecting multiple second fixed electrode plates 0521 through the third branch conductor 0531 and connecting the second elastic support member 051 through the fourth branch conductor 0532, and then connecting multiple second follower electrode plates 0522, the insulation between the second fixed electrode plate 0521 and the second follower electrode plate 0522 can be achieved, providing conditions for the formation of an electric field between the second follower electrode plate 0522 and the second fixed electrode plate 0521.

[0077] Based on the above embodiments, but differing from the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, a first elastic support 031 is fixed on the movement path of the first displacement member 020, and a second elastic support 051 is fixed on the movement path of the second displacement member 040. The first elastic support 031 and the second elastic support 051 are fixedly connected to the base 010. This ensures that the first displacement member 020 and the second displacement member 040 arranged on the first hollow cavity 011, the second hollow cavity 012, and the third hollow cavity 013 are securely connected. The stability of component 040, the first mechanical measurement component 030, and the second mechanical measurement component 050 is ensured by setting the first mechanical measurement component 030 and the second mechanical measurement component 050 on both sides of the nested arrangement formed by the first sample mounting part 021 and the second sample mounting part 041, so that the displacement changes of the first displacement component 020 and the second displacement component 040 at both ends of the sample 016 can be measured simultaneously. In addition, the first mechanical measurement component 030 and the second mechanical measurement component 050 are symmetrically arranged about the sample 016, which ensures the stability of the structure.

[0078] Based on the above embodiments, unlike the above embodiments, in the in-situ mechanical microelectromechanical device provided by the present invention, the first elastic support 031 and / or the second elastic support 051 can specifically be elastic fixed beams, and are made of semiconductor materials with specific orientation and known Young's modulus. In this way, the stiffness coefficient of the first elastic support 031 and / or the second elastic support 051 can be calculated. Combined with the displacement change of the first displacement member 020 and / or the second displacement member 040 measured by the first sensing component 032 and / or the second sensing component 052, the elastic force on the first elastic support 031 and / or the second elastic support 051 can be obtained according to Hooke's law. It can be understood that this elastic force and the force on the sample 016 are a pair of action and reaction forces. According to Newton's third theorem, the force on the sample 016 can be measured by the elastic force on the first elastic support 031 and / or the second elastic support 051.

[0079] In an optional embodiment of the present invention, the first conductor assembly 033 and the second conductor assembly 053 may be metal conductors, such as copper conductors, aluminum conductors or silver conductors, and the embodiments of the present invention do not specifically limit this.

[0080] In an optional embodiment of the present invention, the first sensing component 032 and the second sensing component 052 can perform displacement measurement using the three-electrode method. The three-electrode method can directly measure the change in differential capacitance value with respect to the first displacement element 020 and / or the second displacement element 040. Furthermore, by rationally designing the electrode spacing and distribution between the fixed electrode and the follower electrode, the capacitance-displacement sensitivity can be greatly improved. In an optional embodiment of the present invention, the three-electrode conductor channels, namely the first branch conductor 0331, the second branch conductor 0332, the third branch conductor 0531, and the fourth branch conductor 0532, employ a large-size isolation channel design exceeding 100 μm. This increases the conductor spacing, thereby reducing signal interference between lines and achieving performance advantages of low noise and high stability.

[0081] The first sensing component 032 and the second sensing component 052 used in this embodiment of the invention have the characteristics of low thermal noise and mature technology. They can stably sense the position changes of the first displacement component 020 and the second displacement component 040 after power is applied, and then measure the deformation of the sample 016.

[0082] In an optional embodiment of the present invention, the selectable range of the external length and width of the first sensing component 032 and the second sensing component 052 is 1000-2000 μm. For example, the first sensing component 032 and the second sensing component 052 with external lengths of 1000 μm, 1500 μm, or 2000 μm, and the first sensing component 032 and the second sensing component 052 with external widths of 1000 μm, 1500 μm, or 2000 μm can be selected. The selectable range of the external thickness of the first sensing component 032 and the second sensing component 052 is 10-80 μm. For example, the first sensing component 032 and the second sensing component 052 with external thicknesses of 10 μm, 20 μm, 40 μm, 60 μm, or 80 μm can be selected. It should be noted that the external length, external width, and external thickness of the first sensing component 032 and the second sensing component 052 may be different. Specifically, they can be adaptively selected as needed.

[0083] Based on the above embodiments, the in-situ mechanical microelectromechanical device provided by the present invention, in specific applications such as quantitative in-situ tensile experiments using transmission electron microscopy (TEM), allows sample 016 to utilize focused ion beam technology. A beam (FIB) can be a one-dimensional material, a two-dimensional material, or a bulk material. Sample 016 is placed on a nested arrangement of a second sample mounting part 041 and a first sample mounting part 021. When the driving component 017 is activated, the first displacement member 020 moves away from the second displacement member 040, thus generating displacement. The distance between the multiple first follower plates 0322 and the multiple first fixed plates 0321 of the first sensing component 032 changes by the same displacement. Therefore, the change in the capacitance value output by the first sensing component 032 reflects the displacement of the first displacement member 020. Simultaneously, the second displacement member 040, driven by sample 016, generates displacement in the same direction as the first displacement member 020. The distance between the first sample mounting part 021 of the first displacement member 020 and the second sample mounting part 041 of the second displacement member 040 increases, thus elongating sample 016. The change in the distance between the multiple second follower plates 0522 and the multiple second fixed plates 0521 of the second sensing component 052 indicates a change in the capacitance value output by the second sensing component 052, which reflects the displacement between the second displacement members 040. Further, by calculating the difference between the displacement of the first displacement member 020 and the displacement of the second displacement member 040, the deformation of the sample 016 can be obtained. According to Hooke's law, the force on the sample 016 can be obtained by multiplying the displacement of the second displacement member 040 by the stiffness coefficient of the second elastic support member 051.

[0084] Figure 7This is a schematic diagram of the integrated module 110 in the in-situ mechanical microelectromechanical system provided in an embodiment of the present invention; Figure 8 This is a schematic diagram of the signal acquisition module 120 in the in-situ mechanical microelectromechanical system provided in this embodiment of the invention.

[0085] The present invention also provides an in-situ mechanical microelectromechanical system, with reference to Figure 7 and Figure 8 The system includes an integrated module 110, a signal acquisition module 120, and an in-situ mechanical microelectromechanical device according to any of the aforementioned embodiments. The integrated module 110 and the in-situ mechanical microelectromechanical device are electrically connected via a first flexible lead 130. The integrated module 110 and the signal acquisition module 120 are electrically connected via a second flexible lead. Thus, the capacitance signals acquired by the first sensing component 032 and the second sensing component 052 can be transmitted to the integrated module 110 via the first flexible lead 130. The integrated module 110 can then convert the capacitance signals into voltage signals, and then convert the voltage signals into digital signals, transmitting them to the signal acquisition module 120 via the second flexible lead. This enables signal communication within the in-situ mechanical microelectromechanical system. Furthermore, the signal acquisition module 120 can also provide internal power to the entire in-situ mechanical microelectromechanical system in reverse.

[0086] Based on the above embodiments, the present invention provides an in-situ mechanical microelectromechanical system, referring to... Figure 7 The integrated module 110 includes multiple interconnected capacitance acquisition interfaces 111, capacitance acquisition conversion circuit 112, and signal output interface 113. The multiple capacitance acquisition interfaces 111 are connected to the in-situ mechanical microelectromechanical device through a first flexible lead 130, and the signal output interface 113 is connected to the signal acquisition module 120 through a second flexible lead.

[0087] Specifically, the integrated module 110 can be made using a printed circuit board (PCB). The PCB is made of double-sided copper-clad board with a thickness of ≤0.5mm. The copper board surface is protected by a solder mask layer. The integrated module 110 can be designed using PCB design software.

[0088] like Figure 7As shown, the capacitance acquisition and conversion circuit 112 is arranged between multiple capacitance acquisition interfaces 111 and signal output interfaces 113. The capacitance acquisition and conversion circuit 112 is electrically connected to the multiple capacitance acquisition interfaces 111 and signal output interfaces 113 through preset lines on the PCB. The multiple capacitance acquisition interfaces 111 are arranged side by side, and adjacent capacitance acquisition interfaces 111 are insulated to ensure that the capacitance signals do not interfere with each other. The arrangement of the signal output interface 113 can refer to the arrangement of the multiple capacitance acquisition interfaces 111. The multiple capacitance acquisition interfaces 111 and signal output interfaces 113 can be connected to the outside through flexible PCB connectors, such as flexible leads.

[0089] Specifically, multiple capacitance acquisition interfaces 111 receive capacitance signals from the first sensing component 032 and the second sensing component 052 in the in-situ mechanical microelectromechanical device via flexible leads. Further, the multiple capacitance acquisition interfaces 111 transmit the capacitance signals to the capacitance acquisition conversion circuit 112 via the internal circuitry of the PCB. The capacitance acquisition conversion circuit 112 converts the capacitance signals into voltage signals, then converts the voltage signals into digital signals, and transmits them to the signal output interface 113 via the internal circuitry of the PCB. Further, the signal output interface 113 transmits the digital signals to the signal acquisition module 120 via flexible leads.

[0090] It is understood that in the in-situ mechanical microelectromechanical system provided in this embodiment of the invention, multiple capacitance acquisition interfaces 111 are connected to the in-situ mechanical microelectromechanical device via a first flexible lead 130. Thus, when the first displacement member 020 and the second displacement member 040 move, the first sensing component 032 and the second sensing component 052 can transmit capacitance signals reflecting the displacement changes of the first displacement member 020 and the second displacement member 040 to the integrated module 110. The capacitance acquisition and conversion circuit 112 in the integrated module 110 can then convert the capacitance signals into digital signals. Furthermore, the signal output interface 113 is connected to the signal acquisition module 120 via a second flexible lead. This allows the digital signals converted by the integrated module 110 to be transmitted to the signal acquisition module 120, thereby enabling signal communication and operation of the in-situ mechanical microelectromechanical system.

[0091] Based on the above embodiments, the present invention provides an in-situ mechanical microelectromechanical system, referring to... Figure 8 The signal acquisition module 120 includes a microcontroller 121, a signal acquisition interface 122 and a serial communication interface 123 connected to the microcontroller 121. The signal acquisition interface 122 is connected to the signal output interface 113 through a second flexible lead.

[0092] Specifically, the signal acquisition module 120 can also be fabricated using a printed circuit board, and its fabrication method is similar to that of the integrated module 110. The specific details of this embodiment will not be repeated here. Figure 4 As shown, the microcontroller 121 is located at the center of the PCB. The signal acquisition interface 122 and the serial communication interface 123 are both electrically connected to the microcontroller 121 via pre-fabricated circuitry on the PCB. The microcontroller 121 is fixedly connected to the PCB by soldering. It acquires signals by receiving digital signals transmitted from the signal acquisition interface 122. Furthermore, the microcontroller 121 communicates with external devices and software through the connected serial communication interface 123. The serial communication interface 123 can also simultaneously provide power to the internal circuitry. In an optional embodiment of the invention, the signal acquisition interface 122 can also connect the integrated module 110 and the microcontroller 121 via a wire-to-board connector.

[0093] Figure 9 This is a schematic diagram of the overall structure of the dual-axis tilting sample rod provided in an embodiment of the present invention; Figure 10 This is a front view of the dual-axis tilting sample bar provided in an embodiment of the present invention; Figure 11 This is a top view of the biaxial tilting sample bar provided in an embodiment of the present invention; Figure 12 yes Figure 10 A cross-sectional view of the middle FF.

[0094] The present invention also provides a biaxial tilting sample rod for use in transmission electron microscopy, comprising a drive device 230, a rod body 210, a tilting stage 220, and an in-situ mechanical microelectromechanical system of any of the foregoing embodiments.

[0095] The rod body 210 includes a support body 211 and a drive rod 212, as shown in the figure. Figure 9 , Figure 10 , Figure 11 and Figure 12 The support body 211 has a hollow cavity, that is, the inside of the support body 211 rod is a hollow cavity. The drive rod 212 passes through the hollow cavity. One end of the drive rod 212 is connected to the drive device 230 and is adapted to reciprocate along the inner wall of the hollow cavity under the action of the drive device 230. The tilting table 220 is rotatably connected to the support body 211 and hinged to the drive rod 212, and is adapted to move with the drive rod 212 to tilt. The various parts of the in-situ mechanical microelectromechanical system are respectively located in the tilting table 220, the rod body 210 and the drive device 230.

[0096] Figure 13 yes Figure 11 A magnified schematic diagram of the structure at point C in the middle; Figure 14 yes Figure 13 The right view; Figure 15This is a schematic diagram of the tilting stage 220 connection of the biaxial tilting sample rod provided in an embodiment of the present invention.

[0097] Among them, such as Figure 13 , Figure 14 and Figure 15 As shown, the front end of the support body 211 is rotatably connected to the tilting table 220, and the rear end of the tilting table 220 is rotatably connected to the front end of the drive rod 212, that is, the rear end of the tilting table 220 is hinged to the front end of the drive rod 212; the drive device 230 can realize the tilting movement of the tilting table 220 by reciprocating along the axial direction of the drive rod 212.

[0098] Figure 16 This is a schematic diagram of the tilting stage 220 of the biaxial tilting sample rod provided in an embodiment of the present invention; Figure 17 This is a schematic diagram of the tilting stage 220 from another perspective of the biaxial tilting sample rod provided in an embodiment of the present invention.

[0099] Based on the above embodiments, the difference is that in the biaxial tilting sample bar provided by the present invention, referring to... Figure 16 and Figure 17 The tilting table 220 includes a tilting body 221, a mounting platform 222, a connecting rod 223, and a mounting component 224.

[0100] Among them, such as Figure 17 As shown, the tilting body 221 is provided with a U-shaped tilting groove 2211, and the mounting platform 222 is located in the tilting groove 2211 and is rotatably connected to the tilting body 221; as Figure 15 As shown, the second rotating end of the connecting rod 223 is rotatably connected to the mounting platform 222, and the first rotating end of the connecting rod 223 is rotatably connected to the drive rod 212; the mounting component 224 is fixedly mounted on the mounting platform 222, and the mounting component 224 is provided with a mounting cavity 2241, as shown. Figure 4 and Figure 16 As shown, the in-situ mechanical microelectromechanical device of the in-situ mechanical microelectromechanical system is embedded in the mounting cavity 2241.

[0101] Specifically, such as Figure 13 and Figure 16 As shown, a set of symmetrical rotating shaft holes can be provided on both sides of the U-shaped tilting groove 2211. By passing the rotating shaft through the front end of the support body 211 and the rotating shaft hole, the front end of the support body 211 can be rotatably connected to the U-shaped tilting groove 2211 of the tilting table 220. The rear end of the tilting table 220 is rotatably connected to the front end of the drive rod 212. The drive mechanism can realize the tilting movement of the mounting platform 222 of the tilting table 220 by reciprocating along the axial direction of the drive rod 212.

[0102] like Figure 17As shown, the mounting component 224 has a through hole, and correspondingly, the mounting platform 222 has a screw hole, such as... Figure 16 As shown, the centers of the through hole and the screw hole are first aligned, so that the mounting part 224 and the mounting platform 222 can be fixedly connected by screws. It should be noted that the connection method between the mounting part 224 and the mounting platform 222 is only an optional example of the embodiment of the present invention and is not intended to limit the specific embodiment of the present invention.

[0103] In an optional embodiment of the present invention, refer to Figure 17 The mounting stage 222 may also include an inclined portion 2221 and a horizontal portion 2222. The horizontal portion 2222 may have an electron beam through-hole 2223, so that the high-energy electron beam emitted by the transmission electron microscope can pass through the electron beam through-hole 2223, and further through the mount 224 to contact the sample mounted in the in-situ mechanical microelectromechanical device on the mount 224, thereby realizing the atomic-scale characterization of the sample material. The inclined portion 2221 of the mounting stage 222 has a tilting through-hole, which is rotatably connected to the second rotating end of the connecting rod 223. In this way, during the reciprocating linear motion of the drive rod 212, the cooperation of the transmission mechanism of the connecting rod 223 and the tilting shaft can realize the rotation of the horizontal portion 2222 of the mounting stage 222.

[0104] In an optional embodiment of the present invention, the driving component 017 in the in-situ mechanical microelectromechanical device can be a small-sized micro-actuator, which can realize precise driving of sub-angstrom stepping; specifically, such as Figure 4 As shown, the fixed end of the drive component 017 can be bonded to the mounting part 2242 of the mounting component 224 with instant adhesive, and the moving end of the drive component 017 is also bonded to the first displacement component 020 or the second displacement component 040 in the in-situ mechanical microelectromechanical device with instant adhesive.

[0105] Reference Figure 14 The integrated module 110 of the in-situ mechanical microelectromechanical system can be mounted on the mounting component 224 using fasteners such as bolts or screws. The capacitor acquisition interface 111 at the front end of the integrated module 110 is electrically connected to the pressure welding area in the in-situ mechanical microelectromechanical device through the first flexible lead 130. This ensures that the connection between the integrated module 110 and the in-situ mechanical microelectromechanical device does not interfere with the tilting movement of the tilting table 220. The signal acquisition module 120 of the in-situ mechanical microelectromechanical system is located on the drive device 230. The signal acquisition interface 122 of the signal acquisition module 120 is electrically connected to the signal output interface 113 at the rear end of the integrated module 110 through the second flexible lead. This ensures that the connection between the integrated module 110 and the signal acquisition module 120 does not interfere with the transmission of the drive rod 212.

[0106] When using the biaxial tilting sample rod provided in this embodiment of the invention, the biaxial tilting sample rod can be inserted into a transmission electron microscope. The parameters of the transmission electron microscope are adjusted to the optimal imaging state. The drive rod 212 is controlled by the drive device 230 to reciprocate linearly along the axis of the rod body 210, thereby realizing the rotation of the mounting stage 222 around the tilting axis, adjusting the sample 016 to the low-index positive band axis, and realizing the atomic structure characterization of the sample 016. Furthermore, by driving the first displacement member 020 or the second displacement member 040 in the in-situ mechanical microelectromechanical device through the driving component 017, the tensile and compressive load modes of the sample 016 mounted on the sample 016 mounting part 2242 can be realized. As the first displacement member 020 and the second displacement member 040 move, the signal acquisition module 120 can acquire the capacitance changes of the first sensing component 032 and the second sensing component 052 on the front and rear sides of the sample 016, thereby quantitatively reflecting the deformation and load of the sample 016. In this way, while characterizing the sample 016 at the atomic scale, a stable measurement of the load and deformation of the sample 016 with high mechanical resolution can be performed.

[0107] Figure 18 This is a schematic diagram of the motion guide groove 2111 of the dual-axis tilting sample rod provided in an embodiment of the present invention.

[0108] Based on the above embodiments, the difference is that in the biaxial tilting sample bar provided in this embodiment of the invention, referring to... Figure 18 The front end of the support body 211 is provided with a motion guide groove 2111. The second rotating end of the connecting rod 223 is rotatably connected to the mounting platform 222 through a rotating shaft, and the rotating shaft is in sliding cooperation with the motion guide. Specifically, the front end of the drive rod 212 is provided with a fixed shaft 2121. The drive rod 212 is rotatably connected to the first rotating end of the connecting rod 223 through the fixed shaft 2121. The fixed shaft 2121 passes through the motion guide groove 2111 at the front end of the support body 211. In this way, the reciprocating linear motion of the drive rod 212 in the axial direction of the support body 211 can be constrained by the motion guide groove 2111.

[0109] Based on the above embodiments, unlike the above embodiments, in the biaxial tilting sample rod provided by the present invention, the driving device 230 includes a housing 231 and a driving member 232.

[0110] Among them, reference Figure 12The housing 231 is provided with a first chamber 2311 and a second chamber 2312 at intervals. The first chamber 2311 is located close to the rod body 210 and is connected to the hollow cavity of the support body 211. The driving component 232 is located in the first chamber 2311, so that the driving component 232 can be connected to the rear end of the driving rod 212 to drive the driving rod 212. The second chamber 2312 is sealed. The signal acquisition module 120 of the in-situ mechanical microelectromechanical system is located in the second chamber 2312. The second chamber 2312 has a good shielding effect. The signal acquisition module 120 is made of double-sided copper-clad laminate and is fixed in the second chamber 2312 by screws or other fasteners. This can ensure low signal noise and improve the stability and accuracy of mechanical data measurement.

[0111] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. An in-situ mechanical microelectromechanical device, characterized in that, include: The substrate (010) is provided with a first hollow cavity (011), a second hollow cavity (012) and a third hollow cavity (013), wherein the third hollow cavity (013) is located between the first hollow cavity (011) and the second hollow cavity (012); The first displacement member (020) is disposed in the first hollow cavity (011) via the first mechanical measurement component (030), the first displacement member (020) extends to the third hollow cavity (013), and a first sample mounting part (021) is provided at the extended end of the first displacement member (020). The second displacement member (040) is disposed in the second hollow cavity (012) via the second mechanical measurement component (050). The second displacement member (040) extends to the third hollow cavity (013), and a second sample mounting part (041) is provided at the extended end of the second displacement member (040). The second sample mounting part (041) is nested with the first sample mounting part (021). One of the first displacement member (020) and the second displacement member (040) is fixedly disposed, and the other of the first displacement member (020) and the second displacement member (040) is connected to a driving component (017), which is externally disposed at the front end of the base (010).

2. The in-situ mechanical microelectromechanical device according to claim 1, characterized in that, The first mechanical measurement component (030) includes a first elastic support (031), a first sensing component (032) and a first wire assembly (033). The first elastic support (031) and the first sensing component (032) are respectively connected to the integrated module (110) through the first wire assembly (033). The first elastic support (031) is located on the moving path of the first displacement member (020) and is fixedly connected to the first displacement member (020). Both ends of the first elastic support (031) are fixed to the base (010). The first sensing component (032) is disposed on at least one side of the first displacement member (020), and a portion of the first sensing component (032) is adapted to move with the first displacement member (020) to change the capacitance of the first sensing component (032).

3. The in-situ mechanical microelectromechanical device according to claim 2, characterized in that, The first sensing component (032) includes a plurality of first fixed electrode plates (0321) and a plurality of first follower electrode plates (0322); Multiple first follower plates (0322) are spaced apart on the first displacement member (020) along the moving direction of the first displacement member (020); Multiple first fixed electrode plates (0321) are spaced apart on the substrate (010) along the moving direction of the first displacement member (020), and each first fixed electrode plate (0321) is located between two adjacent first follower electrode plates (0322).

4. The in-situ mechanical microelectromechanical device according to claim 3, characterized in that, The first conductor assembly (033) includes a first branch conductor (0331) and a second branch conductor (0332); The first branch conductor (0331) is connected to a plurality of first fixed electrode plates (0321) through a metal adhesion layer disposed on the substrate (010); The second branch conductor (0332) is connected to the first elastic support (031) through a pressure welding area provided on the substrate (010).

5. The in-situ mechanical microelectromechanical device according to claim 1, characterized in that, The second mechanical measurement component (050) includes a second elastic support (051), a second sensing component (052), and a second wire assembly (053). The second elastic support (051) and the second sensing component (052) are respectively connected to the integrated module (110) through the second wire assembly (053). The second elastic support (051) is located on the moving path of the second displacement member (040) and is fixedly connected to the second displacement member (040). The two ends of the second elastic support (051) are fixed to the base (010). The second sensing component (052) is disposed on at least one side of the second displacement member (040), and a portion of the second sensing component (052) is adapted to move with the second displacement member (040) to change the capacitance of the second sensing component (052).

6. The in-situ mechanical microelectromechanical device according to claim 5, characterized in that, The second sensing component (052) includes a plurality of second fixed electrode plates (0521) and a plurality of second follower electrode plates (0522); Multiple second follower plates (0522) are spaced apart on the second displacement member (040) along the moving direction of the second displacement member (040); Multiple second fixed electrode plates (0521) are spaced apart on the substrate (010) along the moving direction of the second displacement member (040), and each second fixed electrode plate (0521) is located between two adjacent second follower electrode plates (0522).

7. The in-situ mechanical microelectromechanical device according to claim 6, characterized in that, The second conductor assembly (053) includes a third branch conductor (0531) and a fourth branch conductor (0532); The third branch conductor (0531) is connected to a plurality of second fixed electrode plates (0521) through a metal adhesion layer disposed on the substrate (010); The fourth branch conductor (0532) is connected to the second elastic support (051) through a pressure welding area provided on the substrate (010).

8. A biaxial tilting sample holder for use in transmission electron microscopy, characterized in that, include: Drive unit (230); The rod body (210) includes a support body (211) and a drive rod (212). The support body (211) has a hollow cavity. The drive rod (212) passes through the hollow cavity. One end of the drive rod (212) is connected to the drive device (230) and is adapted to reciprocate along the inner wall of the hollow cavity under the action of the drive device (230). The tilting table (220) is rotatably connected to the support body (211) and hinged to the drive rod (212), and is adapted to move with the drive rod (212) to tilt; An in-situ mechanical microelectromechanical system, comprising an integrated module (110), a signal acquisition module (120), and the in-situ mechanical microelectromechanical device according to any one of claims 1 to 7; The integrated module (110) is located at the front end of the support body (211), the in-situ mechanical microelectromechanical device is embedded in the mounting cavity (2241) of the mounting component (224) of the tilting stage (220), and the signal acquisition module (120) is located in the second chamber (2312) of the drive device (230). The integrated module (110) and the in-situ mechanical microelectromechanical device are electrically connected through a first flexible lead (130), and the integrated module (110) and the signal acquisition module (120) are electrically connected through a second flexible lead.

9. The biaxial tilting sample rod according to claim 8, characterized in that, The integrated module (110) includes multiple interconnected capacitance acquisition interfaces (111), capacitance acquisition conversion circuit (112), and signal output interface (113). The multiple capacitance acquisition interfaces (111) are connected to the in-situ mechanical microelectromechanical device through a first flexible lead (130), and the signal output interface (113) is connected to the signal acquisition module (120) through a second flexible lead.

10. The biaxial tilting sample rod according to claim 9, characterized in that, The signal acquisition module (120) includes a microcontroller (121), a signal acquisition interface (122) and a serial communication interface (123) connected to the microcontroller (121). The signal acquisition interface (122) is connected to the signal output interface (113) through a second flexible lead.

11. The biaxial tilting sample rod according to claim 8, characterized in that, The tilting table (220) includes: The tilting body (221) is provided with a U-shaped tilting groove (2211). The mounting platform (222) is located inside the tilting groove (2211) and is rotatably connected to the tilting body (221); The connecting rod (223) is rotatably connected at one end to the mounting platform (222) and rotatably connected at the other end to the drive rod (212); The mounting component (224) is fixedly disposed on the mounting platform (222), and the mounting component (224) is provided with the mounting cavity (2241). The in-situ mechanical microelectromechanical device of the in-situ mechanical microelectromechanical system is embedded in the mounting cavity (2241).

12. The biaxial tilting sample rod according to claim 11, characterized in that, The front end of the support body (211) is provided with a motion guide groove (2111), and the connecting rod (223) is rotatably connected to the mounting platform (222) through a rotating shaft, and the rotating shaft is slidably engaged with the motion guide groove (2111).

13. The biaxial tilting sample rod according to claim 8, characterized in that, The drive device (230) includes: The housing (231) is provided with a first chamber (2311) and a second chamber (2312) spaced apart. The first chamber (2311) is located close to the rod body (210), and the second chamber (2312) is sealed. A drive unit (232) is disposed in the first chamber (2311) and connected to the drive rod (212); The signal acquisition module (120) of the in-situ mechanical microelectromechanical system is located in the second chamber (2312).

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