Exposure method, device, computer equipment, storage medium and computer program product

Abstract

The application relates to an exposure method and device, a computer device, a storage medium and a computer program product. The method comprises the following steps: obtaining a reference diffraction light intensity for exposure of a target layer, the diffraction light intensity being a light intensity of a light beam emitted by a light emitter after diffraction by a diffractive optical element; obtaining an actual diffraction light intensity for exposure of a preset exposure block of the target layer, the preset exposure block being located before an i+1th exposure block, i being a positive integer; calculating an exposure dose compensation value of the i+1th exposure block according to the reference diffraction light intensity and the actual diffraction light intensity; and compensating an exposure dose of the i+1th exposure block according to the exposure dose compensation value. The embodiment of the application can effectively improve the uniformity of a critical dimension of an exposure pattern.

Description

Technical Field

[0001] This application relates to the field of semiconductor photolithography exposure technology, and in particular to an exposure method, apparatus, computer equipment, storage medium and computer program product. Background Technology

[0002] Exposure equipment is a commonly used tool in semiconductor manufacturing processes, capable of patterning various film layers. However, with prolonged operation, the internal hardware of the equipment may age, thus affecting product performance.

[0003] In the energy supply section inside the exposure machine, as the internal hardware ages, the exposure intensity may become abnormal, resulting in abnormalities in the critical dimensions of the exposed pattern. Summary of the Invention

[0004] This application provides an exposure method, apparatus, computer device, computer-readable storage medium, and computer program product that can improve the uniformity of key dimensions of an exposed pattern.

[0005] An exposure method, comprising:

[0006] Obtain the reference diffraction intensity for the exposure of the target layer, wherein the diffraction intensity is the intensity of the light beam after diffraction by the diffraction optical element;

[0007] Obtain the actual diffraction intensity of the preset exposure block of the target layer, where the preset exposure block is located before the (i+1)th exposure block, and i is a positive integer;

[0008] The exposure dose compensation value of the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity.

[0009] The exposure dose of the (i+1)th exposure block is compensated according to the exposure dose compensation value.

[0010] In one embodiment, the exposure dose compensation value for the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity, including:

[0011] The exposure dose compensation value for the (i+1)th exposure block is calculated based on the actual diffraction intensity of the first i exposure blocks and the reference diffraction intensity.

[0012] In one embodiment,

[0013] Based on the actual diffraction intensities of the first i exposure blocks and the reference diffraction intensities, the exposure dose compensation value for the (i+1)th exposure block is calculated, including:

[0014] When i equals 1, the i-th sub-dose compensation value is calculated based on the intensity difference between the actual diffraction intensity of the i-th exposure block and the reference diffraction intensity.

[0015] When i is greater than 1, the i-th sub-dose compensation value is calculated based on the difference between the actual diffraction intensity of the exposure of the i-th exposure block and the actual diffraction intensity of the exposure of the (i-1)-th exposure block.

[0016] The exposure dose compensation value of the (i+1)th exposure block is calculated based on the sum of the first i sub-dose compensation values.

[0017] In one embodiment, the exposure time of the i-th exposure block is calculated based on the size and exposure speed of the i-th exposure block, and the i-th sub-dose compensation value is calculated by combining the light intensity difference and the exposure time.

[0018] In one embodiment,

[0019] The exposure dose compensation value for the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity, including:

[0020] The exposure dose compensation value for the (i+1)th exposure block is calculated based on the intensity difference between the actual diffracted light intensity of the i-th exposure block and the reference diffracted light intensity.

[0021] In one embodiment, the exposure dose compensation value for the (i+1)th exposure block is calculated based on the intensity difference between the actual diffracted light intensity of the exposure to the i-th exposure block and the reference diffracted light intensity, including:

[0022] For the first i exposure blocks, the exposure time of each exposure block is calculated based on the size and exposure speed of each exposure block;

[0023] Calculate the average exposure time of the first i exposure blocks;

[0024] The exposure dose compensation value of the (i+1)th exposure block is calculated based on the light intensity difference and the average exposure time.

[0025] In one embodiment, the reference diffraction intensity is the initial diffraction intensity detected within a first preset time before the exposure machine performs exposure.

[0026] In one embodiment, the first preset time is 0.5 min to 1.5 min.

[0027] In one embodiment, before compensating the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value, the method further includes:

[0028] Determine whether the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity;

[0029] When the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity, the exposure dose of the (i+1)-th exposure block is compensated according to the exposure dose compensation value.

[0030] In one embodiment, when the actual diffraction intensity of the i-th exposure block is not lower than the threshold intensity, the i+1-th exposure block is exposed according to the original exposure dose.

[0031] In one embodiment, the method for obtaining the threshold light intensity includes:

[0032] Obtain the diffraction intensity distribution of the target layer exposed within a second preset time period;

[0033] Obtain the key size distribution of the target layer within the second preset time period;

[0034] Based on the diffraction intensity distribution and the critical size distribution, the diffraction intensity value that causes the critical size to exceed a preset size range is obtained, and used as the threshold intensity.

[0035] An exposure apparatus, comprising:

[0036] The light source module includes a light emitter and diffractive optical elements;

[0037] The detection module is used to detect the intensity of diffracted light, which is the intensity of the light beam emitted by the light emitter after being diffracted by the diffractive optical element.

[0038] A control module, connected to the light source module and the detection module, is used to control exposure according to the method of any one of claims 1-11.

[0039] In one embodiment, the light emitter includes a laser, and the light source module further includes a zoom element, a ring optical element, a refractive optical element, and an optical coupling element.

[0040] A computer device includes a memory and a processor, the memory storing a computer program, the processor executing the computer program to implement the steps of any of the methods described above.

[0041] A computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of any of the methods described above.

[0042] A computer program product includes a computer program that, when executed by a processor, implements the steps of any of the methods described above.

[0043] The aforementioned exposure method, apparatus, computer equipment, storage medium, and computer program product, by acquiring the reference diffracted light intensity and the actual diffracted light intensity, monitor the light intensity of the beam emitted by the emitter after diffraction by the diffractive optical elements, and effectively compensate for the exposure dose of the exposure blocks. Therefore, this embodiment can improve the critical size uniformity of each exposure block in the target layer. Furthermore, by monitoring the diffracted light intensity and compensating for the exposure dose of the exposure blocks, the exposure machine can operate for a longer period after commissioning, thereby improving the machine's utilization efficiency and increasing production capacity. This can extend the lifespan of optical components. Simultaneously, monitoring the diffracted light intensity can also be used to monitor the health status of the exposure machine (especially the health status of the optical components), allowing for early detection of machine problems. Attached Figure Description

[0044] Figure 1 This is a flowchart illustrating an exposure method in one embodiment;

[0045] Figure 2 This is a schematic diagram of an exposure block in a target layer of a wafer in one embodiment;

[0046] Figure 3 This is a schematic diagram of the process for calculating the exposure dose compensation value of the (i+1)th exposure block in one embodiment;

[0047] Figure 4 This is a flowchart illustrating the exposure method in another embodiment;

[0048] Figure 5 This is a structural block diagram of the exposure apparatus in one embodiment;

[0049] Figure 6 This is a schematic diagram of the light source module structure in one embodiment;

[0050] Figure 7 This is an internal structural diagram of a computer device in one embodiment;

[0051] Figure 8 This is a schematic diagram of the key dimensions of the exposure pattern gradually formed in each exposure block during the exposure process in one embodiment;

[0052] Figure 9 This is a schematic diagram illustrating the change of diffraction intensity over time in one embodiment. Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0054] In one embodiment, see Figure 1 An exposure method is provided, comprising the following steps:

[0055] Step S200: Obtain the reference diffraction intensity for the exposure of the target layer. The diffraction intensity is the intensity of the light beam emitted by the emitter after being diffracted by the diffraction optical element.

[0056] Step S400: Obtain the actual diffraction intensity of the preset exposure block of the target layer. The preset exposure block is located before the (i+1)th exposure block, where i is a positive integer.

[0057] Step S600: Calculate the exposure dose compensation value of the (i+1)th exposure block based on the reference diffraction intensity and the actual diffraction intensity.

[0058] Step S800: Compensate the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value.

[0059] In step S200, during the exposure process, the light beam emitted by the light source needs to be diffracted by a diffractive optical element (DOE). Here, the intensity of the light beam after diffraction by the diffractive optical element is called the diffracted light intensity.

[0060] After being diffracted by diffractive optical elements, the light beam is further processed by other optical elements (such as ring optical elements, optical coupling elements, and refractive optical elements) to ultimately form a light source for exposure. Light sources can have various shapes (e.g., cylindrical light sources, ring light sources). These shapes can be formed by combining many exposure optical elements.

[0061] The target layer can be any film layer formed on the wafer that needs to be exposed.

[0062] In semiconductor processing, different film layers require different exposure conditions, which involves many different exposure optical elements. Therefore, different DOEs (Diffractive optical elements) can be used to expose different film layers on a wafer.

[0063] The reference diffraction intensity for exposing the target layer serves as a reference standard for exposing the target layer, and it can be obtained in advance before exposing the target layer.

[0064] When exposing the target layer under a reference diffraction intensity, an ideal exposure effect can be obtained, resulting in an ideal critical dimension for the exposed pattern. An ideal critical dimension can be understood as a critical dimension that is standard or close to standard.

[0065] As an example, the reference diffraction intensity can be the initial diffraction intensity detected within a first preset time before the exposure machine performs exposure. The first preset time can be set according to actual needs, for example, it can be set to 0.5min-1.5min.

[0066] Of course, the reference diffraction intensity can also be obtained from historical, experimental, or simulated data; there are no restrictions on this.

[0067] In step S400, please refer to Figure 2 In the target layer of the wafer, multiple exposure blocks 10 can be set. Please refer to... Figure 2 The diagram within the dashed box illustrates that each exposure block 10 in the figure corresponds to three data points. The number 'a' above exposure block 10 indicates the scanning order. The number 'b' in the middle indicates the number. During exposure, the beam moves along a preset direction (such as the Y direction) to achieve exposure. The number below indicates the exposure speed (i.e., movement speed) of beam c in each exposure block, in mm / s.

[0068] While exposing each exposure block of the target layer, the diffraction intensity can be detected to obtain the actual diffraction intensity of each exposure block.

[0069] Here, it can be understood that the preset exposure block is located before the (i+1)th exposure block, which can include multiple exposure blocks before the (i+1)th exposure block, or it can be a single exposure block before the (i+1)th exposure block.

[0070] In step S600, there is a correlation between diffraction intensity and exposure dose. Therefore, the exposure dose compensation value can be calculated using the reference diffraction intensity and the actual diffraction intensity of the preset exposure block. This exposure dose compensation value is used to compensate for the exposure dose when the (i+1)th exposure block is exposed.

[0071] In step S800, the exposure dose compensation value can be added to the original exposure dose to obtain the exposure dose of the (i+1)th exposure block. Then, the (i+1)th exposure block is exposed using this exposure dose. The original exposure dose is the originally set initial exposure dose, and each exposure block has an initial exposure dose.

[0072] In this embodiment, by acquiring the reference diffracted light intensity and the actual diffracted light intensity, the intensity of the light beam emitted by the emitter after diffraction by the diffractive optical element is monitored, and the exposure dose of the exposure block is effectively compensated. Therefore, this embodiment can improve the critical size uniformity of each exposure block in the target layer.

[0073] Furthermore, by monitoring the diffraction intensity, the exposure dose of the exposure area can be compensated, allowing the exposure machine to operate for a longer period after debugging, thereby improving the machine's efficiency and increasing production capacity. This, in turn, can extend the lifespan of optical components.

[0074] At the same time, by monitoring the intensity of diffracted light, the health status of the exposure machine (especially the health status of optical components) can also be monitored, and machine problems can be detected in advance.

[0075] In one embodiment, step S600 includes:

[0076] Step S610: Calculate the exposure dose compensation value for the (i+1)th exposure block based on the actual diffraction intensity of the first i exposure blocks and the reference diffraction intensity.

[0077] The reference diffraction intensity can be obtained before exposing the target layer.

[0078] During the exposure of the target layer, each exposure block is scanned and exposed sequentially. While scanning and exposing each exposure block, its diffraction intensity can also be detected, thus obtaining the actual diffraction intensity of each exposure block.

[0079] The first i exposure blocks are all the exposure blocks that were exposed before the (i+1)th exposure block.

[0080] In this embodiment, based on the actual diffraction intensity of all previously exposed exposure blocks and the reference diffraction intensity, the changes in diffraction intensity during the exposure process can be monitored in detail. Therefore, the exposure dose compensation value for the (i+1)th exposure block can be calculated more accurately.

[0081] In one embodiment, see Figure 3 Step S610 includes:

[0082] Step S611: When i equals 1, calculate the i-th sub-dose compensation value based on the intensity difference between the actual diffraction intensity of the i-th exposure block and the reference diffraction intensity.

[0083] Step S612: When i is greater than 1, calculate the i-th sub-dose compensation value based on the difference between the actual diffraction intensity of the exposure of the i-th exposure block and the actual diffraction intensity of the exposure of the (i-1)-th exposure block.

[0084] Step S613: Calculate the exposure dose compensation value of the (i+1)th exposure block based on the sum of the first i sub-dose compensation values.

[0085] In step S611, the first sub-dose compensation value is related to the difference between the actual diffraction intensity of the first exposure block and the reference diffraction intensity int0.

[0086] In step S612, the i-th sub-dose compensation value is related to the difference between the actual diffraction intensity of the i-th exposure block and the actual diffraction intensity of the (i-1)-th exposure block.

[0087] As an example, in steps S611 and S612, the exposure time of the i-th exposure block can be calculated based on the size and exposure speed of the i-th exposure block, and the i-th sub-dose compensation value can be calculated by combining the light intensity difference and the exposure time.

[0088] It can be understood that the size of the exposure block is its length along the direction of movement of the exposure beam (the Y direction in the figure). The exposure speed of the exposure block is the speed at which the exposure beam moves over it.

[0089] Of course, the exposure time of each exposure block can also be stored in memory, without having to be obtained through calculation.

[0090] At this point, the first sub-dose compensation value d1 can be expressed as:

[0091] d1 = abs(int1 - int0) * t1

[0092] Where abs represents the absolute value of the value in parentheses, int1 represents the actual diffraction intensity of the first exposure block, int0 represents the reference diffraction intensity, and t1 represents the exposure time of the first block.

[0093] The i-th sub-dose compensation value d i It can be represented as:

[0094] d i =abs(int i -int i-1 )*t i

[0095] Where abs represents taking the absolute value of the value within the parentheses, and int i Int represents the actual diffracted light intensity of the i-th exposure block. i-1 t represents the actual diffraction intensity of the (i-1)th exposure block. i This represents the exposure time of the i-th block.

[0096] In step S613, the exposure dose compensation value δ of the (i+1)th exposure block i+1 It can be represented as:

[0097] δ i+1 =Σdm Where m ranges from 1 to i, Σd m This represents the sum of the first i sub-dose compensation values.

[0098] It is understandable that the exposure dose compensation value δ2 = d1 for the second exposure block.

[0099] In this embodiment, firstly, i sub-dose compensation values ​​are calculated based on the i exposure blocks preceding the (i+1)th exposure block. Then, the i sub-dose compensation values ​​are added together to obtain the exposure dose compensation value for the (i+1)th exposure block. At this point, the diffraction intensity changes of each exposure block preceding the (i+1)th exposure block can be taken into account, thereby improving the compensation accuracy.

[0100] The exposure time for each exposure block is different. The sub-dose compensation value is obtained by multiplying the exposure time by the change in light intensity. This can accurately reflect the change in exposure dose caused by the change in diffraction light intensity in each exposure block, thereby effectively compensating for the exposure dose of the (i+1)th exposure block.

[0101] In other embodiments, step S610 may also calculate the exposure dose compensation value of the (i+1)th exposure block in other ways. For example, the exposure dose compensation value δ of the (i+1)th exposure block i+1 It can be represented as:

[0102] δ i+1 =(abs(int1-int0)+Σabs(int i -int i-1 ))*t 均 Where abs indicates taking the absolute value of the value within the parentheses, int1 represents the actual diffraction intensity of the first exposure block, int0 represents the reference diffraction intensity, and int... i Int represents the actual diffracted light intensity of the i-th exposure block. i-1 t represents the actual diffraction intensity of the (i-1)th exposure block. 均 This represents the average exposure time of the first i exposure blocks, where i is a positive integer greater than 1, and m ranges from 1 to i.

[0103] In one embodiment, step S600 includes:

[0104] Step S620: Calculate the exposure dose compensation value for the (i+1)th exposure block based on the intensity difference between the actual diffraction intensity of the exposure to the i-th exposure block and the reference diffraction intensity.

[0105] In this embodiment, the exposure dose compensation value of the next exposure block is calculated directly using the intensity difference between the actual diffraction intensity of the previous exposure block and the reference diffraction intensity, thereby simplifying the calculation process of the compensation value and improving exposure efficiency.

[0106] In one embodiment, step S620 includes:

[0107] Step S621: For the first i exposure blocks, calculate the exposure time of each exposure block based on the size and exposure speed of each exposure block.

[0108] Step S622: Calculate the average exposure time of the first i exposure blocks;

[0109] Step S623: Calculate the exposure dose compensation value for the (i+1)th exposure block based on the light intensity difference and the average exposure time.

[0110] In step S621, the size of the exposure block is its length along the direction of movement of the exposure beam (Y direction in the figure). The exposure speed of the exposure block is the speed at which the exposure beam moves over it.

[0111] For the first i exposure blocks, the corresponding exposure duration is obtained. The exposure duration of each exposure block is related to its size and exposure speed.

[0112] In step S622, the average exposure time t of the first i exposure blocks 均 It can be represented as:

[0113] t 均 =Σt m / i, where m ranges from 1 to i, t m Σt represents the exposure duration of the m-th exposure block. m This represents the sum of the exposure durations of the first i exposure blocks.

[0114] In step S623, the exposure dose compensation value of the (i+1)th exposure block is calculated based on the intensity difference between the actual diffraction intensity and the reference diffraction intensity of the i-th exposure block and the average exposure time.

[0115] The exposure dose compensation value δ for the (i+1)th exposure block i+1 It can be represented as:

[0116] δ i+1 =abs(int i -int0)*t 均 =abs(int i -int0)*(Σt m / i),

[0117] Where abs represents taking the absolute value of the value within the parentheses, and int i Indicates the actual diffraction intensity of the i-th exposure block, and int0 represents the reference diffraction intensity.

[0118] In this embodiment, the exposure dose compensation value of the (i+1)th exposure block can be obtained relatively accurately by using the average exposure time and the change value of the actual diffraction intensity of the i-th exposure block relative to the reference diffraction intensity (i.e., the difference in light intensity between the actual diffraction intensity of the i-th exposure block and the reference diffraction intensity).

[0119] Of course, in other embodiments, step S620 can also obtain the exposure dose compensation value of the (i+1)th exposure block in other ways. For example, it can also be that the median of the i exposure durations of the first i exposure blocks is selected, and this median is multiplied by the change in the actual diffraction intensity of the i-th exposure block relative to the reference diffraction intensity to calculate the exposure dose compensation value of the (i+1)th exposure block.

[0120] In one embodiment, see Figure 4 Before step S800, the following are also included:

[0121] Step S700: Determine whether the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity.

[0122] The threshold light intensity is a threshold of diffraction light intensity that ensures the critical dimensions of the exposed pattern are controlled within a preset size range. Variations in diffraction light intensity affect the critical dimension values. When the diffraction light intensity drops below the threshold light intensity, the resulting critical dimension values ​​may exceed the preset size range.

[0123] The preset size range can be set according to actual needs. For example, if you want to control the obtained standard key dimension values ​​to be... But in The critical dimensions within the specified range are acceptable. Therefore, at this point... It can be set to a preset size range.

[0124] When the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity, proceed to step S800, and compensate the exposure dose of the (i+1)-th exposure block according to the exposure dose compensation value.

[0125] When the actual diffracted light intensity of the i-th exposure block is lower than the threshold light intensity, it indicates that the diffracted light intensity has significantly decreased due to factors such as aging of the diffractive optical elements. This makes it difficult to control the critical dimensions of the exposed pattern within the preset size range. In this case, the exposure dose of the (i+1)-th exposure block is compensated according to the exposure dose compensation value, which can effectively prevent the critical dimensions of the (i+1)-th exposure block from exceeding the preset size range.

[0126] Specifically, please refer to Figure 8 When the actual diffraction intensity of the i-th exposure block is lower than the threshold intensity, the critical size of its exposure pattern exceeds the preset size range. At this point, step S800 is entered, where the exposure dose of the (i+1)th exposure block is compensated according to the exposure dose compensation value, thereby bringing the critical size of the exposed pattern in the (i+1)th exposure block back to the preset size range. Therefore, this embodiment can effectively control the critical size of the exposed pattern within the preset size range.

[0127] In one embodiment, when the actual diffraction intensity of the i-th exposure block is not lower than the threshold intensity, the exposure dose of the (i+1)-th exposure block is not compensated, i.e., step S900 can be executed to expose the i-th exposure block according to the original exposure dose.

[0128] When the actual diffracted light intensity of the i-th exposure block is not lower than the threshold light intensity, it indicates that although the diffracted light intensity has attenuated to some extent, it is still within an acceptable range. At this point, exposing according to the original exposure dose makes it relatively easy to control the critical dimensions of the resulting pattern within the preset size range. Therefore, it is not necessary to compensate for the exposure dose of the (i+1)-th exposure block.

[0129] In this embodiment, the exposure dose of the next exposure block can be compensated based on the degree of attenuation of the diffraction intensity of the previous exposure block, thereby effectively improving the exposure efficiency.

[0130] In one embodiment, the method for obtaining the threshold light intensity includes:

[0131] Step S20: Obtain the diffraction intensity distribution of the target layer exposed within the second preset time period;

[0132] Step S40: Obtain the key size distribution of the target layer within the second preset time period;

[0133] Step S60: Based on the diffraction intensity distribution and the critical size distribution, obtain the diffraction intensity value that causes the critical size to exceed the preset size range, and use it as the threshold intensity.

[0134] In step S20, the second preset time can be set according to actual needs. For example, please refer to... Figure 9 A second preset time period can be set to four months. Within this second preset time period, the diffracted light intensity will eventually decrease to 5685.74 cd. Afterward, the optical components can be replaced, thereby allowing the diffracted light intensity to reach 7256.73 cd.

[0135] The diffracted light intensity of the target layer can be obtained through detection. Specifically, the diffracted light intensity of the target layer can be detected at regular intervals within a second preset time period. Each detection can involve multiple measurements of the diffracted light intensity of the target layer, and then the average value is taken as the diffracted light intensity value for that detection.

[0136] In step S40, the key dimensions of the same or the same set of exposure patterns of the target layer can be monitored within a second preset time period, thereby obtaining the key dimension distribution of the target layer within the second preset time period.

[0137] In step S60, the diffraction intensity value that causes the critical size to exceed the preset size range can be obtained by comparing the diffraction intensity distribution and the critical size distribution, and used as the threshold intensity.

[0138] This value exceeding the preset size range can be either the lowest value below the preset size range or the highest value above the preset size range.

[0139] It should be understood that, although Figure 1 , Figure 3 , Figure 4 The steps in the flowchart are shown sequentially as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified herein, there is no strict order in which these steps are executed, and they can be performed in other orders. Figure 1 , Figure 3 , Figure 4 At least some of the steps in the process may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but may be executed at different times. The execution order of these steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least some of the steps or stages in other steps.

[0140] In one embodiment, an exposure device is also provided; see [link to relevant documentation]. Figure 5 It includes: a light source module 100, a detection module 200, and a control module 300.

[0141] Please see Figure 6 The light source module 100 includes a light emitter 110 and a diffractive optical element 120. The light emitter 110 may include a laser or the like. The diffractive optical element 120 diffracts the light beam emitted by the light emitter. In addition, the light source module 100 may also include other optical elements.

[0142] As an example, the light source module 100 may also include a zoom element 130, an annular optical element 140, an optical coupling element 150, a refractive optical element 160, etc. The light beam emitted by the emitter 110 is diffracted by the diffractive optical element 120, and can then be further processed by the zoom element 130, the annular optical element 140, the optical coupling element 150, the refractive optical element 160, etc., to finally form a light source for exposure.

[0143] The detection module 200 is used to detect the intensity of diffracted light; for example, it can be a light intensity measuring instrument. The intensity of diffracted light is the intensity of the light beam emitted by the emitter after it has been diffracted by the diffractive optical element.

[0144] The control module 300 is connected to the light source module 100 and the detection module 200, and is used to control the exposure according to the above method.

[0145] Specific limitations regarding the exposure apparatus can be found in the limitations of the exposure method described above, and will not be repeated here. Each module in the aforementioned exposure apparatus can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in hardware or independently of the processor in a computer device, or stored in software in the memory of a computer device, so that the processor can call and execute the operations corresponding to each module.

[0146] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 7 As shown, the computer device includes a processor, memory, communication interface, display screen, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When the computer program is executed by the processor, it implements an exposure method. The display screen can be an LCD screen or an e-ink screen. The input devices can be a touch layer covering the display screen, buttons, a trackball, or a touchpad mounted on the computer device casing, or an external keyboard, touchpad, or mouse.

[0147] Those skilled in the art will understand that Figure 7The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0148] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0149] Step S200: Obtain the reference diffraction intensity for the exposure of the target layer. The diffraction intensity is the intensity of the light beam emitted by the emitter after being diffracted by the diffraction optical element.

[0150] Step S400: Obtain the actual diffraction intensity of the preset exposure block of the target layer. The preset exposure block is located before the (i+1)th exposure block, where i is a positive integer.

[0151] Step S600: Calculate the exposure dose compensation value of the (i+1)th exposure block based on the reference diffraction intensity and the actual diffraction intensity.

[0152] Step S800: Compensate the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value.

[0153] In one embodiment, when the processor executes the computer program, it further implements the following steps: calculating the exposure dose compensation value of the (i+1)th exposure block based on the reference diffraction intensity and the actual diffraction intensity, including: calculating the exposure dose compensation value of the (i+1)th exposure block based on the first i actual diffraction intensities of the first i exposure blocks and the reference diffraction intensity.

[0154] In one embodiment, when the processor executes the computer program, it further implements the following steps: calculating the exposure dose compensation value of the (i+1)th exposure block based on the first i actual diffraction light intensities exposed to the first i exposure blocks and the reference diffraction light intensity, including: when i equals 1, calculating the i-th sub-dose compensation value based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the reference diffraction light intensity; when i is greater than 1, calculating the i-th sub-dose compensation value based on the light intensity difference between the actual diffraction light intensity exposed to the i-th exposure block and the actual diffraction light intensity exposed to the (i-1)th exposure block; and calculating the exposure dose compensation value of the (i+1)th exposure block based on the sum of the first i sub-dose compensation values.

[0155] In one embodiment, when the processor executes the computer program, it further performs the following steps: calculating the exposure time of the i-th exposure block based on the size and exposure speed of the i-th exposure block, and calculating the i-th sub-dose compensation value by combining the light intensity difference and the exposure time.

[0156] In one embodiment, when the processor executes the computer program, it further implements the following steps: calculating the exposure dose compensation value of the (i+1)th exposure block based on the reference diffraction intensity and the actual diffraction intensity, including: calculating the exposure dose compensation value of the (i+1)th exposure block based on the intensity difference between the actual diffraction intensity and the reference diffraction intensity of the exposure of the i-th exposure block.

[0157] In one embodiment, when the processor executes the computer program, it further implements the following steps: calculating the exposure dose compensation value of the (i+1)th exposure block based on the intensity difference between the actual diffracted light intensity and the reference diffracted light intensity exposed to the i-th exposure block, including: for the first i exposure blocks, calculating the exposure time of each exposure block based on the size and exposure speed corresponding to each exposure block; calculating the average exposure time of the first i exposure blocks; and calculating the exposure dose compensation value of the (i+1)th exposure block based on the intensity difference and the average exposure time.

[0158] In one embodiment, when the processor executes the computer program, it further implements the following steps: the reference diffraction intensity is the initial diffraction intensity detected within a first preset time before the exposure machine performs exposure.

[0159] In one embodiment, the first preset time is 0.5 min to 1.5 min.

[0160] In one embodiment, the processor, when executing the computer program, further implements the following steps: before compensating the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value, it further includes: determining whether the actual diffraction intensity of the exposure of the i-th exposure block is lower than the threshold intensity; when the actual diffraction intensity of the exposure of the i-th exposure block is lower than the threshold intensity, compensating the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value.

[0161] In one embodiment, when the processor executes the computer program, it further implements the following steps: when the actual diffraction intensity of the i-th exposure block is not lower than the threshold intensity, the exposure dose of the (i+1)-th exposure block is not compensated.

[0162] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining the diffraction intensity distribution of the target layer exposed within a second preset time period; obtaining the critical size distribution of the target layer within the second preset time period; and obtaining the diffraction intensity value that causes the critical size to exceed a preset size range based on the diffraction intensity distribution and the critical size distribution, as a threshold intensity.

[0163] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the steps in the above method embodiments.

[0164] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above method embodiments.

[0165] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the methods described above. Any references to memory, storage, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical storage, etc. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc.

[0166] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0167] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. An exposure method, characterized in that, include: Obtain the reference diffraction intensity for the exposure of the target layer, wherein the diffraction intensity is the intensity of the light beam after diffraction by the diffraction optical element; Obtain the actual diffraction intensity of the preset exposure block of the target layer, where the preset exposure block is located before the (i+1)th exposure block, and i is a positive integer; The exposure dose compensation value of the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity. The exposure dose of the (i+1)th exposure block is compensated according to the exposure dose compensation value.

2. The exposure method according to claim 1, characterized in that, The exposure dose compensation value for the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity, including: The exposure dose compensation value for the (i+1)th exposure block is calculated based on the actual diffraction intensity of the first i exposure blocks and the reference diffraction intensity.

3. The exposure method according to claim 2, characterized in that, When i equals 1, the i-th sub-dose compensation value is calculated based on the intensity difference between the actual diffraction intensity of the i-th exposure block and the reference diffraction intensity. When i is greater than 1, the i-th sub-dose compensation value is calculated based on the difference between the actual diffraction intensity of the exposure of the i-th exposure block and the actual diffraction intensity of the exposure of the (i-1)-th exposure block. The exposure dose compensation value of the (i+1)th exposure block is calculated based on the sum of the first i sub-dose compensation values.

4. The exposure method according to claim 3, characterized in that, Based on the size and exposure speed of the i-th exposure block, the exposure time of the i-th block is calculated. Combining the light intensity difference and the exposure time, the i-th sub-dose compensation value is calculated.

5. The exposure method according to claim 1, characterized in that, The exposure dose compensation value for the (i+1)th exposure block is calculated based on the reference diffraction intensity and the actual diffraction intensity, including: The exposure dose compensation value for the (i+1)th exposure block is calculated based on the intensity difference between the actual diffracted light intensity of the i-th exposure block and the reference diffracted light intensity.

6. The exposure method according to claim 5, characterized in that, For the first i exposure blocks, the exposure time of each exposure block is calculated based on the size and exposure speed of each exposure block; Calculate the average exposure time of the first i exposure blocks; The exposure dose compensation value of the (i+1)th exposure block is calculated based on the light intensity difference and the average exposure time.

7. The exposure method according to claim 1, characterized in that, The reference diffraction intensity is the initial diffraction intensity detected within a first preset time before the exposure machine performs exposure.

8. The exposure method according to claim 7, characterized in that, The first preset time is 0.5 min to 1.5 min.

9. The exposure method according to any one of claims 1-8, characterized in that, Before compensating the exposure dose of the (i+1)th exposure block according to the exposure dose compensation value, the following steps are also included: Determine whether the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity; When the actual diffraction intensity of the exposure to the i-th exposure block is lower than the threshold intensity, the exposure dose of the (i+1)-th exposure block is compensated according to the exposure dose compensation value.

10. The exposure method according to claim 9, characterized in that, When the actual diffraction intensity of the i-th exposure block is not lower than the threshold intensity, the i+1-th exposure block is exposed.

11. The exposure method according to claim 9, characterized in that, The method for obtaining the threshold light intensity includes: Obtain the diffraction intensity distribution of the target layer exposed within a second preset time period; Obtain the key size distribution of the target layer within the second preset time period; Based on the diffraction intensity distribution and the critical size distribution, the diffraction intensity value that causes the critical size to exceed a preset size range is obtained, and used as the threshold intensity.

12. An exposure apparatus, characterized in that, include: The light source module includes a light emitter and diffractive optical elements; The detection module is used to detect the intensity of diffracted light, which is the intensity of the light beam emitted by the light emitter after being diffracted by the diffractive optical element. A control module, connected to the light source module and the detection module, is used to control exposure according to the method of any one of claims 1-11.

13. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 11.

14. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 11.

15. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 11.

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