ASM-GaN HEMT SPICE model parameter extraction method

Abstract

The application discloses a spice model parameter extraction method of ASM-GaN HEMT, and relates to the field of semiconductors, and comprises the following steps: step one, determining device process parameters; step two, extracting current-voltage relationship curve related parameters in a linear region; step three, extracting current-voltage relationship curve related parameters at 300K; and step four, extracting temperature related parameters. The application improves the spice model direct current parameter extraction efficiency and the accuracy of extracted parameters of ASM-GaN HEMT.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more specifically to a method for extracting parameters from an ASM-GaN HEMT spice model. Background Technology

[0002] Gallium nitride high electron mobility transistors (GaN HEMTs) have become the preferred choice for high-power, high-voltage, and high-frequency applications. To fully utilize the characteristics of these devices, accurate circuit simulations are required. The accuracy and convergence of the simulation largely depend on the compact model of the GaN HEMT. ASM-GaN HEMT is considered the preferred model based on a physically compact design and is currently mainly used in industry. This model can accurately describe the terminal current, charge, trapping effect, thermal noise, and flicker noise of GaN HMT devices. The DC parameter extraction method commonly used in this model separates the drain current-drain voltage (id_vd) curve and the drain current-gate voltage (id_vg) curve for parameter extraction. However, many parameters affect both the drain current-drain voltage (id_vd) and drain current-gate voltage (id_vg) curves. Sometimes, adjusting the drain current-drain voltage (id_vd) curve can disrupt the previously adjusted drain current-gate voltage (id_vg) curve, requiring the drain current-gate voltage (id_vg) curve to be readjusted. This necessitates repeated extraction multiple times, increasing the complexity of parameter extraction and reducing its efficiency. Summary of the Invention

[0003] To address the shortcomings of existing technologies, the present invention aims to provide a method for extracting DC parameters from the spice model of ASM-GaN HEMT, thereby improving the extraction efficiency and accuracy of the extracted parameters.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] A method for extracting parameters from an ASM-GaN HEMT SPICE model includes the following steps:

[0006] Step 1: Determine the device process parameters;

[0007] Step 2: Extract relevant parameters from the current-voltage relationship curve in the linear region;

[0008] Step 3: Extract relevant parameters from the current-voltage relationship curve at 300K;

[0009] Step 4: Extract temperature-related parameters.

[0010] Preferably, in step two, relevant parameters are extracted using the drain current-gate voltage curve and transconductance-gate voltage curve at 300K and the drain current-gate voltage curve at 370K.

[0011] Preferably, the parameters related to the current-voltage relationship curve in the linear region in step two include threshold voltage parameters, subthreshold slope parameters, low-field mobility parameters, mobility degradation coefficient, source contact resistance parameters, and drain contact resistance parameters extracted from the drain current-gate voltage curve and transconductance-gate voltage curve at 300K; and temperature-dependent parameters of threshold voltage, mobility temperature dependence parameters, and source contact resistance and drain contact resistance extracted from the drain current-gate voltage curve at 300K and drain current-gate voltage curve at 370K.

[0012] Preferably, step three specifically involves extracting parameters using the drain current-drain voltage curve and conductance-drain voltage curve at 300K, as well as the drain current-gate voltage curve and transconductance-gate voltage curve at 300K.

[0013] Preferably, in step three, the relevant parameters of the current-voltage relationship curve at 300K include saturation rate parameters, channel length modulation effect parameters, and DIBL parameters extracted from the drain current-drain voltage curve and conductance-drain voltage curve at 300K, as well as the drain current-gate voltage curve and transconductance-gate voltage curve at 300K.

[0014] Preferably, step four specifically involves extracting parameters using the drain current-drain voltage curves and conductance-drain voltage curves at 300K and 370K, as well as the drain current-gate voltage curves and transconductance-gate voltage curves at 300K and 370K.

[0015] Preferably, the temperature-related parameters in step four include: temperature-dependent parameters of source contact mobility, temperature-dependent parameters of drain contact mobility, temperature-dependent parameters of saturation rate, thermal resistance, and temperature-dependent parameters of source contact resistance and drain contact resistance extracted from the drain current-drain voltage curves and conductance-drain voltage curves at 300K and 370K, and the drain current-gate voltage curves and transconductance-gate voltage curves at 300K and 370K.

[0016] Preferably, the process parameters include: device length, device width, AlGaN thickness, device gate-source spacing, and device gate-drain spacing.

[0017] As can be seen from the above technical solution, compared with the prior art, the present invention provides a method for extracting DC parameters of ASM-GaN HEMT spice model, which improves the extraction efficiency and accuracy of DC parameters of ASM-GaN HEMT spice model. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0019] Figure 1 Flowchart of the parameter extraction method for ASM-GaN HEMT in the Spice model;

[0020] Figure 2 A schematic diagram showing the curves of measured and simulated values ​​of drain current versus gate voltage (id_vg);

[0021] Figure 3 A schematic diagram showing the curves of the measured and simulated transconductance-gate voltage (gm-vg);

[0022] Figure 4 A schematic diagram showing the curves of measured and simulated values ​​of drain current versus drain voltage (id_vd);

[0023] Figure 5 This is a schematic diagram of the curves showing the measured and simulated values ​​of conductance-drain voltage (gds_vd). Detailed Implementation

[0024] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0025] This invention discloses a flowchart of a method for extracting parameters from an AIM-GaN HEMT SPICE model. The following will refer to... Figure 1 This paper provides a detailed description of the method for extracting parameters from the spice model of ASM-GaN HEMT.

[0026] First, the process parameters determined in step 101 are given.

[0027] The device process parameters of GaN HEMT include: device length (L), device width (W), AlGaN thickness (TBAR), device gate-source spacing (LSG), device gate-drain spacing (LDG), and other dimensional parameters. These parameters are generally given by the device designer.

[0028] In step 102, the relevant parameters of the current-voltage relationship in the linear region are extracted.

[0029] Threshold voltage parameter (Vth), subthreshold slope parameter (NFACTOR), low field mobility parameter (U0), mobility degradation coefficient (UA), source contact resistance parameter (RSC), and drain contact resistance parameter (RDC) are extracted from the drain current-gate voltage curve and transconductance-gate voltage curve at 300K.

[0030] Temperature-dependent parameters of threshold voltage (KT1), mobility (UTE), source contact resistance (KRSC), and drain contact resistance (KRDC) are extracted from the drain current-gate voltage curves at 300K and 370K.

[0031] In step 103, extract the relevant parameters of the current-voltage relationship curve at 300K.

[0032] The saturation rate parameter (VSAT), channel length modulation effect parameter (LAMBDA), and DIBL effect parameter (ETA0) were extracted from the drain current-drain voltage curve and conductance-drain voltage curve at 300K, as well as the drain current-gate voltage curve and transconductance-gate voltage curve at 300K.

[0033] In step 104, temperature-related parameters are extracted.

[0034] When extracting temperature-related parameters, considering the self-heating effect, the self-heating module parameter (SHMOD) was set to 1 before parameter extraction. The following parameters were extracted from the drain current-drain voltage and conductance-drain voltage curves at 300K and 370K, as well as the drain current-gate voltage and transconductance-gate voltage curves at 300K and 370K: source contact mobility temperature dependence parameter (UTES), drain contact mobility temperature dependence parameter (UTED), saturation rate temperature dependence parameter (AT), thermal resistance parameter (RTH0), source contact resistance temperature dependence parameter (KRSC), and drain contact resistance temperature dependence parameter (KRDC).

[0035] Once this process is completed, the basic parameters of the ASM-GaN HEMT SPICE model are determined.

[0036] The following example uses the measurement data of a GaN HEMT with L=1u, W=100u, TBAR=25nm, LSG=3u, and LDG=3u at t=27℃ to illustrate parameter extraction following the proposed procedure. The parameter extraction results obtained after following the above steps are as follows:

[0037] Vth -5.90052 NFACTOR 0.426508 U0 0.318433 UA 0 RSC 0.00100111 RDC 0.00100111 KT1 -0.0973343 UTE -2.06738 KRSC 3.54068 KRDC 3.54068 VSAT 656843 LAMBDA 0.0369669 ETA0 0.0714089 UTES -2.98847 UTED -2.98847 AT 1.44857 RTH0 23.5877 TNOM 27

[0038] The IV curves plotted using the parameter values ​​extracted above are shown in the following schematic diagrams:

[0039] The obtained curves of measured and simulated drain current versus gate voltage (id_vg) are shown below. Figure 2 As shown.

[0040] The obtained curves of transconductance-gate voltage (gm-vg) measured and simulated values ​​are shown in the figure. Figure 3 As shown.

[0041] The obtained curves of measured and simulated drain current and drain voltage (id_vd) are shown in the figure. Figure 4 As shown.

[0042] The obtained curves of the measured and simulated values ​​of conductance-drain voltage (gds_vd) are shown below. Figure 5 As shown in the figure. Here, Vgate represents the gate voltage; Vdrain represents the drain voltage; Idrian represents the drain current; gm represents the transconductance; gds represents the conductance; and Vth represents the threshold voltage.

[0043] The obtained curves of measured and simulated values ​​of drain current versus gate voltage (id_vg).

[0044] Analysis shows that the error rates of the IV measurement and simulation values ​​obtained by the proposed ASM-GaN HEMT spice model parameter extraction process are both below 2%, which meets engineering requirements and proves the practicality of the process.

[0045] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the apparatus disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the description is relatively simple; relevant parts can be referred to the method section.

[0046] The above description of the disclosed embodiments enables those skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for extracting parameters from the spice model of ASM-GaN HEMT, characterized in that, Includes the following steps: Step 1: Determine the device process parameters; Step 2: Extract relevant parameters from the current-voltage relationship curve in the linear region. These parameters include: threshold voltage parameters, subthreshold slope parameters, low-field mobility parameters, mobility degradation coefficient, source contact resistance parameters, and drain contact resistance parameters extracted from the drain current-gate voltage curve and transconductance-gate voltage curve at 300K; and temperature-dependent parameters for threshold voltage, mobility, source contact resistance, and drain contact resistance extracted from the drain current-gate voltage curve at 300K and 370K. Step 3: Extract relevant parameters from the current-voltage relationship curves at 300K. Specifically, in Step 3: extract parameters from the drain current-drain voltage curve, conductance-drain voltage curve, drain current-gate voltage curve, and transconductance-gate voltage curve at 300K. Step 4: extract parameters from the drain current-drain voltage curve, conductance-drain voltage curve, drain current-gate voltage curve, and transconductance-gate voltage curve at 300K and 370K. The temperature-related parameters in Step 4 include: extracting temperature-dependent parameters for source contact mobility, drain contact mobility, saturation rate, thermal resistance, source contact resistance, and drain contact resistance from the drain current-drain voltage curve, conductance-drain voltage curve, and transconductance-gate voltage curve at 300K and 370K. Step 4: Extract temperature-related parameters. Considering the self-heating effect, set the self-heating module parameter (SHMOD) to 1 before extracting parameters.

2. The method for extracting parameters of an ASM-GaN HEMT spice model according to claim 1, characterized in that, In step two, the relevant parameters are extracted using the drain current-gate voltage curve and transconductance-gate voltage curve at 300K and the drain current-gate voltage curve at 370K.

3. The method for extracting parameters of an ASM-GaN HEMT spice model according to claim 1, characterized in that, In step three, the relevant parameters of the current-voltage relationship curve at 300K include the saturation rate parameter, channel length modulation effect parameter, and DIBL parameter extracted from the drain current-drain voltage curve and conductance-drain voltage curve at 300K, as well as the drain current-gate voltage curve and transconductance-gate voltage curve at 300K.

4. The method for extracting parameters of an ASM-GaN HEMT spice model according to claim 1, characterized in that, The process parameters include: device length, device width, AlGaN thickness, device gate-source spacing, and device gate-drain spacing.

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