A SnO2 micron-wire heterojunction-based self-driven ultraviolet detector, its fabrication method and application

CN117253938BActive Publication Date: 2026-07-03NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
Filing Date
2023-10-09
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing SnO2-based ultraviolet detectors suffer from slow light response, low sensitivity, and performance limitations due to p-type materials. In particular, traditional heterojunction devices suffer from lattice mismatch and interface defects, resulting in insufficient detection capabilities.

Method used

High-crystallinity SnO2 microwires were prepared by CVD, MgO thin films were introduced as electron blocking layers, and Ag NWs were used to improve poor contact, forming a heterojunction between p-GaN substrate and n-SnO2 microwires, thus optimizing the carrier transport path.

Benefits of technology

A high-sensitivity, fast-response ultraviolet detector has been developed, with a responsivity of 231 mA/W and an improved on/off ratio. This solves the problem of low sensitivity caused by large leakage current in traditional devices, and the material exhibits high physical and chemical stability.

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Abstract

This invention discloses a SnO2 micron-wire heterojunction-based self-driven ultraviolet detector, comprising a p-GaN substrate, a metal anode and an MgO thin film disposed at intervals on the p-GaN substrate, and Ag NWs-modified n-SnO2 micron-wires and conductive glass sequentially disposed on the surface of the MgO thin film; the Ag NWs-modified n-SnO2 micron-wires and the p-GaN substrate form a heterojunction; the metal anode is in ohmic contact with the p-GaN substrate, and the conductive glass is in ohmic contact with the Ag NWs-modified n-SnO2 micron-wires. This invention also discloses the fabrication method of this SnO2 micron-wire heterojunction-based self-driven ultraviolet detector and its application in ultraviolet light detection and imaging systems. This invention improves the carrier transport path inside the device, enhances the light absorption capability, and has a faster response speed and a higher on / off ratio, representing the first heterojunction self-driven photodetector using SnO2 as the detection host.
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